JPH0425230U - - Google Patents
Info
- Publication number
- JPH0425230U JPH0425230U JP6733090U JP6733090U JPH0425230U JP H0425230 U JPH0425230 U JP H0425230U JP 6733090 U JP6733090 U JP 6733090U JP 6733090 U JP6733090 U JP 6733090U JP H0425230 U JPH0425230 U JP H0425230U
- Authority
- JP
- Japan
- Prior art keywords
- sample
- view
- etching device
- plasma
- plasma etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000006073 displacement reaction Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
Description
第１図は本案装置の第１実施例の模式的縦断面
図、第２図は試料台支持筒３６周辺部の斜視図、
第３図は排気量制御装置の平面図、第４図は本案
装置の第２実施例の模式的縦断面図、第５図は本
案装置及び従来装置夫々におけるガス圧力と相対
エツチング速度との関係を示すグラフ、第６図は
従来のＥＣＲのプラズマエツチング装置の模式的
縦断面図、第７図は従来の平行平板型反応性エツ
チング装置の模式的縦断面図である。
３１……プラズマ生成室、３１ｂ……石英ガラ
ス板、３２……マイクロ波導波管、３３……反応
室、３４……励磁コイル、３５……試料台、３７
……カバー、３８，３９……排気量制御装置、Ｓ
……試料。
FIG. 1 is a schematic vertical sectional view of the first embodiment of the present device, FIG. 2 is a perspective view of the surrounding area of the sample stage support cylinder 36,
FIG. 3 is a plan view of the displacement control device, FIG. 4 is a schematic longitudinal sectional view of the second embodiment of the device of the present invention, and FIG. 5 is the relationship between gas pressure and relative etching rate in the device of the present invention and the conventional device. FIG. 6 is a schematic vertical cross-sectional view of a conventional ECR plasma etching apparatus, and FIG. 7 is a schematic vertical cross-sectional view of a conventional parallel plate type reactive etching apparatus. 31... Plasma generation chamber, 31b... Quartz glass plate, 32... Microwave waveguide, 33... Reaction chamber, 34... Excitation coil, 35... Sample stage, 37
... Cover, 38, 39 ... Displacement control device, S
……sample.
Claims (1)
ス圧力下でプラズマを照射してエツチングを行う
プラズマエツチング装置において、 試料を位置させるべき部分の近傍に排気口を具
備することを特徴とするプラズマエツチング装置
。[Scope of Claim for Utility Model Registration] A plasma etching device that performs etching by irradiating plasma under low gas pressure to a portion of a reaction chamber where a sample is to be placed, which is equipped with an exhaust port near the portion where the sample is to be placed. A plasma etching device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6733090U JPH0425230U (en) | 1990-06-25 | 1990-06-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6733090U JPH0425230U (en) | 1990-06-25 | 1990-06-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0425230U true JPH0425230U (en) | 1992-02-28 |
Family
ID=31600809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6733090U Pending JPH0425230U (en) | 1990-06-25 | 1990-06-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0425230U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06112165A (en) * | 1992-09-29 | 1994-04-22 | Tokyo Ohka Kogyo Co Ltd | Plasma processor |
| JPH10321605A (en) * | 1997-05-20 | 1998-12-04 | Tokyo Electron Ltd | Plasma treatment device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5687667A (en) * | 1979-12-20 | 1981-07-16 | Toshiba Corp | Reactive ion etching method |
| JPS62183530A (en) * | 1986-02-07 | 1987-08-11 | Nec Kyushu Ltd | Dry etching apparatus |
| JPS62252941A (en) * | 1986-04-25 | 1987-11-04 | Matsushita Electric Ind Co Ltd | Semiconductor production unit |
| JPS63205914A (en) * | 1987-02-23 | 1988-08-25 | Hitachi Ltd | Semiconductor manufacturing equipment |
| JPH01272769A (en) * | 1987-12-30 | 1989-10-31 | Texas Instr Japan Ltd | Plasma generation apparatus |
-
1990
- 1990-06-25 JP JP6733090U patent/JPH0425230U/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5687667A (en) * | 1979-12-20 | 1981-07-16 | Toshiba Corp | Reactive ion etching method |
| JPS62183530A (en) * | 1986-02-07 | 1987-08-11 | Nec Kyushu Ltd | Dry etching apparatus |
| JPS62252941A (en) * | 1986-04-25 | 1987-11-04 | Matsushita Electric Ind Co Ltd | Semiconductor production unit |
| JPS63205914A (en) * | 1987-02-23 | 1988-08-25 | Hitachi Ltd | Semiconductor manufacturing equipment |
| JPH01272769A (en) * | 1987-12-30 | 1989-10-31 | Texas Instr Japan Ltd | Plasma generation apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06112165A (en) * | 1992-09-29 | 1994-04-22 | Tokyo Ohka Kogyo Co Ltd | Plasma processor |
| JPH10321605A (en) * | 1997-05-20 | 1998-12-04 | Tokyo Electron Ltd | Plasma treatment device |