JPH04249353A - Resin-sealed semiconductor device - Google Patents
Resin-sealed semiconductor deviceInfo
- Publication number
- JPH04249353A JPH04249353A JP3683291A JP3683291A JPH04249353A JP H04249353 A JPH04249353 A JP H04249353A JP 3683291 A JP3683291 A JP 3683291A JP 3683291 A JP3683291 A JP 3683291A JP H04249353 A JPH04249353 A JP H04249353A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- lead frame
- metal plates
- semiconductor device
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000011347 resin Substances 0.000 claims abstract description 6
- 229920005989 resin Polymers 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 abstract description 10
- 239000000853 adhesive Substances 0.000 abstract description 8
- 230000001070 adhesive effect Effects 0.000 abstract description 8
- 238000005530 etching Methods 0.000 abstract description 2
- 238000004080 punching Methods 0.000 abstract description 2
- 229910001111 Fine metal Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、樹脂封止型半導体装置
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealed semiconductor device.
【０００２】0002
【従来の技術】図４は従来の樹脂封止型半導体装置を示
す平面図、図５は図４のＡーＡ線断面図である。図にお
いて、１は半導体集積回路（以下ＩＣと称する）チップ
、２はこのＩＣチップ１を搭載するアイランド、３はア
イランド２を囲むように配置されたインナーリード、４
はアウターリード、５は金属細線、６はモールド樹脂で
ある。2. Description of the Related Art FIG. 4 is a plan view showing a conventional resin-sealed semiconductor device, and FIG. 5 is a sectional view taken along line AA in FIG. In the figure, 1 is a semiconductor integrated circuit (hereinafter referred to as IC) chip, 2 is an island on which this IC chip 1 is mounted, 3 is an inner lead arranged so as to surround the island 2, and 4
5 is an outer lead, 5 is a thin metal wire, and 6 is a mold resin.
【０００３】かかる半導体装置の組立てに際しては、ま
ずＩＣチップ１をフレームのアイランド２に接着剤で固
定し、ＩＣチップ１とインナーリード３の間を金属細線
５で電気的に接合し、次にモールド樹脂６で封止する。
その後、アウターリード４をメッキし、さらにリードカ
ット、ベンドを行う。When assembling such a semiconductor device, the IC chip 1 is first fixed to the island 2 of the frame with an adhesive, the IC chip 1 and the inner leads 3 are electrically bonded using thin metal wires 5, and then the mold is It is sealed with resin 6. After that, the outer leads 4 are plated, and the leads are further cut and bent.
【０００４】0004
【発明が解決しようとする課題】上記のような従来の樹
脂封止型半導体装置では、ＩＣチップとの膨張率をあわ
せる為、リードフレーム材料が鉄系となり、封止樹脂と
共にその熱伝導率が低く、パッケージ全体に熱が拡がら
ず、放熱性が悪かった。[Problems to be Solved by the Invention] In the conventional resin-sealed semiconductor device as described above, the lead frame material is iron-based in order to match the expansion coefficient with the IC chip, and its thermal conductivity is reduced along with the sealing resin. The temperature was low, and the heat did not spread throughout the package, resulting in poor heat dissipation.
【０００５】さらに放熱性を改善する為に、高熱伝導材
である銅等のヒートスプレッダーを下面に貼り付ける場
合でも、膨張率の関係から、フレーム材をヒートスプレ
ッダーにあわさねばならなかった。[0005] Furthermore, even when a heat spreader made of a highly thermally conductive material such as copper is attached to the bottom surface in order to improve heat dissipation, the frame material must be matched to the heat spreader due to the coefficient of expansion.
【０００６】この発明は上記のような問題点を解決する
ためになされたもので、パッケージの熱抵抗を小さくす
ると共に、インナーリード材とヒートスプレッダー材の
熱膨張率が違っていても不具合が生じない樹脂封止型半
導体装置を得ることを目的とする。[0006] This invention was made to solve the above-mentioned problems, and it reduces the thermal resistance of the package and also prevents problems from occurring even if the coefficients of thermal expansion of the inner lead material and the heat spreader material are different. The purpose of this invention is to obtain a resin-sealed semiconductor device.
【０００７】[0007]
【課題を解決するための手段】この発明に係る樹脂封止
型半導体装置は、信号用のリードフレーム材の上下両側
を絶縁層を介して高熱伝導性の金属板ではさむようにす
ると共に、この金属板は、パッケージ全体に拡がる様に
し、又リードフレームとは絶縁層を介して接しているが
、接着剤で固着はしておらず、上下の金属板同士が直接
接着する様にしている。[Means for Solving the Problems] A resin-sealed semiconductor device according to the present invention has a signal lead frame material sandwiched between upper and lower sides by metal plates having high thermal conductivity with an insulating layer interposed therebetween. The plate extends over the entire package, and is in contact with the lead frame via an insulating layer, but is not fixed with adhesive, and the upper and lower metal plates are directly bonded to each other.
【０００８】[0008]
【作用】この発明における高熱伝導性の金属板は、パッ
ケージ全体に拡がるように配置されてあるため、熱抵抗
が小さくなり、放熱性が良好となる。更に、金属板はリ
ードフレーム材には直接に固着されていない為、ヒート
スプレッダーとフレーム材料の熱膨張率が違っていても
熱変形等を起こさずにすむ。[Operation] Since the highly thermally conductive metal plate of the present invention is arranged so as to spread over the entire package, the thermal resistance is reduced and the heat dissipation is improved. Furthermore, since the metal plate is not directly fixed to the lead frame material, thermal deformation does not occur even if the heat spreader and the frame material have different coefficients of thermal expansion.
【０００９】[0009]
【実施例】以下、この発明の実施例を図について説明す
る。図１は本発明の実施例による樹脂封止型半導体装置
を示す平面図、図２は図１のＢーＢ線断面図、図３は図
１のＣーＣ線断面図であり、図において、１〜６は従来
装置と同一部分を示すものとする。７はパッケージ内部
全体に拡がるように設けられた高熱伝導体でできた金属
板（ヒートスプレッダー）であり、８はインナーリード
３とヒートスプレッダー７を電気的に絶縁するための絶
縁層、９はこの絶縁層８をヒートスプレッダー７に固着
する接着剤、１０は上側と下側の高熱伝導材を接続する
接着剤で、インナーリード３とは接着されないようにし
ている。DESCRIPTION OF THE PREFERRED EMBODIMENTS Examples of the present invention will be described below with reference to the drawings. 1 is a plan view showing a resin-sealed semiconductor device according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along the line B--B in FIG. 1, and FIG. 3 is a cross-sectional view taken along the line C--C in FIG. , 1 to 6 indicate the same parts as the conventional device. 7 is a metal plate (heat spreader) made of a high thermal conductor provided so as to spread throughout the inside of the package; 8 is an insulating layer for electrically insulating the inner lead 3 and the heat spreader 7; An adhesive 10 is used to fix the insulating layer 8 to the heat spreader 7, and an adhesive 10 is used to connect the high heat conductive materials on the upper and lower sides, so that it is not bonded to the inner lead 3.
【００１０】上記のように構成された樹脂封止型半導体
装置の組立てに際しては、フレーム及び高熱伝導性の金
属板７は予め従来通りエッチングあるいはパンチング等
で形成される。次に金属板７に絶縁層８を貼り付け、更
にフレームをはさみこむ様にして、金属板７を接続し、
一体のフレームとして完成させる。When assembling the resin-sealed semiconductor device constructed as described above, the frame and the highly thermally conductive metal plate 7 are formed in advance by etching or punching in the conventional manner. Next, the insulating layer 8 is attached to the metal plate 7, and the frame is sandwiched between the metal plates 7 and the metal plate 7.
Complete as a single frame.
【００１１】[0011]
【発明の効果】以上のようにこの発明によれば、ヒート
スプレッダーの役割を果す様に高熱伝導性の金属板がパ
ッケージ全体に拡がっている為、熱抵抗が小さく、放熱
性が良好となる。又ヒートスプレッダーはインナーリー
ドと直接に固着されていない為、ヒートスプレッダーと
インナーリード材の熱膨張率が異なっていても、フレー
ム変形等の問題が起きない。[Effects of the Invention] As described above, according to the present invention, since the highly thermally conductive metal plate is spread over the entire package to play the role of a heat spreader, the thermal resistance is low and the heat dissipation is good. Furthermore, since the heat spreader is not directly fixed to the inner lead, problems such as frame deformation do not occur even if the heat spreader and the inner lead material have different coefficients of thermal expansion.
【図１】この発明の一実施例による樹脂封止型半導体装
置を示す平面図である。FIG. 1 is a plan view showing a resin-sealed semiconductor device according to an embodiment of the present invention.
【図２】図１のＢーＢ線断面図である。FIG. 2 is a sectional view taken along the line BB in FIG. 1;
【図３】図１のＣーＣ線断面図である。FIG. 3 is a sectional view taken along line CC in FIG. 1;
【図４】従来の樹脂封止型半導体装置を示す平面図であ
る。FIG. 4 is a plan view showing a conventional resin-sealed semiconductor device.
【図５】図４のＡーＡ線断面図である。FIG. 5 is a sectional view taken along line AA in FIG. 4;
１ ＩＣチップ ２ アイランド ３ インナーリード ４ アウターリード ５ 金属細線 ６ モールド樹脂 ７ ヒートスブレッダー ８ 絶縁層 ９ 接着剤 １０ 接着剤 1 IC chip 2 Island 3 Inner lead 4 Outer lead 5 Thin metal wire 6 Mold resin 7 Heat spreader 8 Insulating layer 9. Adhesive 10 Adhesive
Claims (1)
ＩＣチップとリードフレームを金属細線で接合すると共
に、モールド樹脂で樹脂封止してなる樹脂封止型半導体
装置において、リードフレームの上下両側を、パッケー
ジ全体に拡がる高熱伝導性の金属板で、絶縁層を介し固
着せずに挾み込んだことを特徴とする樹脂封止型半導体
装置。[Claim 1] An IC chip is mounted on the island,
In a resin-sealed semiconductor device in which an IC chip and a lead frame are bonded with thin metal wires and sealed with a molded resin, the upper and lower sides of the lead frame are insulated with highly thermally conductive metal plates that extend over the entire package. A resin-sealed semiconductor device characterized by being sandwiched between layers without being fixed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3683291A JP2905609B2 (en) | 1991-02-05 | 1991-02-05 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3683291A JP2905609B2 (en) | 1991-02-05 | 1991-02-05 | Resin-sealed semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04249353A true JPH04249353A (en) | 1992-09-04 |
| JP2905609B2 JP2905609B2 (en) | 1999-06-14 |
Family
ID=12480721
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3683291A Expired - Fee Related JP2905609B2 (en) | 1991-02-05 | 1991-02-05 | Resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2905609B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0766323A (en) * | 1993-08-25 | 1995-03-10 | Nec Corp | Resin-sealed semiconductor device |
| US6072240A (en) * | 1998-10-16 | 2000-06-06 | Denso Corporation | Semiconductor chip package |
| US6380622B1 (en) | 1998-11-09 | 2002-04-30 | Denso Corporation | Electric apparatus having a contact intermediary member and method for manufacturing the same |
| US6538308B1 (en) | 1998-07-14 | 2003-03-25 | Denso Corporation | Semiconductor apparatus with heat radiation structure for removing heat from semiconductor element |
| US6693350B2 (en) | 1999-11-24 | 2004-02-17 | Denso Corporation | Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure |
| US6703707B1 (en) | 1999-11-24 | 2004-03-09 | Denso Corporation | Semiconductor device having radiation structure |
| US6946730B2 (en) | 2001-04-25 | 2005-09-20 | Denso Corporation | Semiconductor device having heat conducting plate |
| JP2007142226A (en) * | 2005-11-21 | 2007-06-07 | Matsushita Electric Ind Co Ltd | Semiconductor device and method of manufacturing same, and method of manufacturing lead frame used therefor |
-
1991
- 1991-02-05 JP JP3683291A patent/JP2905609B2/en not_active Expired - Fee Related
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0766323A (en) * | 1993-08-25 | 1995-03-10 | Nec Corp | Resin-sealed semiconductor device |
| US6538308B1 (en) | 1998-07-14 | 2003-03-25 | Denso Corporation | Semiconductor apparatus with heat radiation structure for removing heat from semiconductor element |
| US7009284B2 (en) | 1998-07-14 | 2006-03-07 | Denso Corporation | Semiconductor apparatus with heat radiation structure for removing heat from semiconductor element |
| US6072240A (en) * | 1998-10-16 | 2000-06-06 | Denso Corporation | Semiconductor chip package |
| US6448645B1 (en) | 1998-10-16 | 2002-09-10 | Denso Corporation | Semiconductor device |
| US6380622B1 (en) | 1998-11-09 | 2002-04-30 | Denso Corporation | Electric apparatus having a contact intermediary member and method for manufacturing the same |
| US6891265B2 (en) | 1999-11-24 | 2005-05-10 | Denso Corporation | Semiconductor device having radiation structure |
| US6798062B2 (en) | 1999-11-24 | 2004-09-28 | Denso Corporation | Semiconductor device having radiation structure |
| US6703707B1 (en) | 1999-11-24 | 2004-03-09 | Denso Corporation | Semiconductor device having radiation structure |
| US6960825B2 (en) | 1999-11-24 | 2005-11-01 | Denso Corporation | Semiconductor device having radiation structure |
| US6967404B2 (en) | 1999-11-24 | 2005-11-22 | Denso Corporation | Semiconductor device having radiation structure |
| US6992383B2 (en) | 1999-11-24 | 2006-01-31 | Denso Corporation | Semiconductor device having radiation structure |
| US6998707B2 (en) | 1999-11-24 | 2006-02-14 | Denso Corporation | Semiconductor device having radiation structure |
| US6693350B2 (en) | 1999-11-24 | 2004-02-17 | Denso Corporation | Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure |
| US6946730B2 (en) | 2001-04-25 | 2005-09-20 | Denso Corporation | Semiconductor device having heat conducting plate |
| US6963133B2 (en) | 2001-04-25 | 2005-11-08 | Denso Corporation | Semiconductor device and method for manufacturing semiconductor device |
| JP2007142226A (en) * | 2005-11-21 | 2007-06-07 | Matsushita Electric Ind Co Ltd | Semiconductor device and method of manufacturing same, and method of manufacturing lead frame used therefor |
| JP4688647B2 (en) * | 2005-11-21 | 2011-05-25 | パナソニック株式会社 | Semiconductor device and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2905609B2 (en) | 1999-06-14 |
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