JPH04221077A - Gaseous phase treating apparatus - Google Patents
Gaseous phase treating apparatusInfo
- Publication number
- JPH04221077A JPH04221077A JP40471390A JP40471390A JPH04221077A JP H04221077 A JPH04221077 A JP H04221077A JP 40471390 A JP40471390 A JP 40471390A JP 40471390 A JP40471390 A JP 40471390A JP H04221077 A JPH04221077 A JP H04221077A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- gas supply
- gasses
- gases
- processing chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007792 gaseous phase Substances 0.000 title abstract 2
- 239000007789 gas Substances 0.000 claims abstract description 140
- 239000000758 substrate Substances 0.000 claims description 22
- 238000009826 distribution Methods 0.000 abstract description 10
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、処理チャンバに複数の
ガスを導入して基板を処理する気相処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor phase processing apparatus for processing a substrate by introducing a plurality of gases into a processing chamber.
【０００２】上記気相処理装置にはＣＶＤ装置（化学気
相成長装置）やドライエッチング装置などがあり、これ
らの装置は、半導体装置の製造における基板上の膜形成
やエッチングに用いられる。その場合、基板に対する処
理のレートと面内均一性が重要であることから、導入す
る複数のガスを適量に導入し且つ均一に混合する必要が
ある。[0002] The above-mentioned vapor phase processing apparatus includes a CVD apparatus (chemical vapor deposition apparatus), a dry etching apparatus, and the like, and these apparatuses are used for film formation and etching on a substrate in the manufacture of semiconductor devices. In this case, since the processing rate and in-plane uniformity of the substrate are important, it is necessary to introduce the plurality of gases in appropriate amounts and mix them uniformly.
【０００３】0003
【従来の技術】図２は第１従来例の装置概略図である。
同図において、この従来例はＣＶＤ装置を例にとったも
のであり、１は基板、２は処理チャンバ、２ａ〜２ｃは
処理チャンバ２のガス導入口、２ｄは同じくガス排出口
、３ａ〜３ｃはガス供給配管、４ａ〜４ｃは処理チャン
バ２に導入するガス、５は基板１を加熱する加熱ランプ
、である。2. Description of the Related Art FIG. 2 is a schematic diagram of a first conventional apparatus. In the same figure, this conventional example takes a CVD apparatus as an example, and 1 is a substrate, 2 is a processing chamber, 2a to 2c are gas inlets of the processing chamber 2, 2d is also a gas outlet, and 3a to 3c are Reference numerals 4a to 4c indicate gas supply pipes; 4a to 4c indicate gases introduced into the processing chamber 2; 5 indicates a heating lamp for heating the substrate 1;
【０００４】処理チャンバ２は、ガス供給配管３ａ〜３
ｃと同じ大きさにしたガス導入口２ａ〜２ｃにガス供給
配管３ａ〜３ｃが接続されて、ガス４ａ〜４ｃを個別に
導入するようになっており、その導入はガス排出口２ｄ
から引かれた減圧に伴う差圧によってなされる。また、
基板１が配置されその基板１を加熱ランプ５が加熱する
。[0004] The processing chamber 2 includes gas supply pipes 3a to 3.
Gas supply pipes 3a to 3c are connected to the gas inlet ports 2a to 2c, which have the same size as c, to individually introduce gases 4a to 4c, and the gases 4a to 4c are introduced through the gas outlet 2d.
This is done by the differential pressure associated with the vacuum drawn from the Also,
A substrate 1 is placed, and a heating lamp 5 heats the substrate 1.
【０００５】導入されたガス４ａ〜４ｃは、処理チャン
バ２内で混合して基板１の表面に達し、基板１の温度に
より反応を起こして基板１上に膜を形成する。用済みと
なったガス４ａ〜４ｃはガス排出口２ｄから排出される
。The introduced gases 4a to 4c are mixed in the processing chamber 2, reach the surface of the substrate 1, and react with the temperature of the substrate 1 to form a film on the substrate 1. The used gases 4a to 4c are discharged from the gas discharge port 2d.
【０００６】図３は第２従来例の装置概略図（ａ） と
ガス混合容器断面図（ｂ） である。同図において、こ
の従来例は第１従来例のガス導入形態を変えたものであ
り、図３（ｂ） に詳細を示すガス混合容器６を設けて
ある。６ｂ，６ｃはガス混合容器６のガス供給口、６ｄ
は同じくガス流出口、である。FIG. 3 is a schematic diagram (a) of a second conventional device and a cross-sectional diagram (b) of a gas mixing vessel. In the figure, this conventional example is a modification of the gas introduction form of the first conventional example, and is provided with a gas mixing container 6 whose details are shown in FIG. 3(b). 6b and 6c are gas supply ports of the gas mixing container 6, and 6d
is also the gas outlet.
【０００７】ガス混合容器６は、ガス供給配管３ｂ，３
ｃと同じ大きさにしたガス供給口６ｂ，６ｃにガス供給
配管３ｂ，３ｃが接続され、ガス流出口６ｄが処理チャ
ンバ２のガス導入口２ｂに接続されている。処理チャン
バ２のガス導入口２ｃは閉じられている。The gas mixing container 6 is connected to the gas supply pipes 3b, 3
The gas supply pipes 3b and 3c are connected to the gas supply ports 6b and 6c, which have the same size as c, and the gas outlet 6d is connected to the gas inlet 2b of the processing chamber 2. The gas inlet 2c of the processing chamber 2 is closed.
【０００８】従ってガス４ｂ，４ｃは、処理チャンバ２
の減圧に伴う差圧によりガス混合容器６に個別に流入し
てそこで混合し、混合状態で処理チャンバ２に導入され
る。
処理チャンバ２に導入された混合状態のガス４ｂ，４ｃ
と単独のガス４ａは、処理チャンバ２内で混合して第１
従来例の場合と同様に基板１上に膜を形成してガス排出
口２ｄから排出される。[0008] Therefore, the gases 4b and 4c are
The gases individually flow into the gas mixing container 6 due to the pressure difference caused by the pressure reduction, are mixed there, and are introduced into the processing chamber 2 in a mixed state. Mixed gases 4b and 4c introduced into the processing chamber 2
and the single gas 4a are mixed in the processing chamber 2 to form the first
As in the case of the conventional example, a film is formed on the substrate 1 and is discharged from the gas discharge port 2d.
【０００９】[0009]
【発明が解決しようとする課題】ところで、上述の膜形
成を半導体装置の製造で行う場合には、基板１に対する
膜成長レート（速度）の確保と成長膜厚の面内分布均一
性が重要である。[Problems to be Solved by the Invention] When the above-mentioned film formation is performed in the manufacture of semiconductor devices, it is important to ensure a film growth rate (velocity) on the substrate 1 and uniformity of the in-plane distribution of the grown film thickness. be.
【００１０】しかしながら、後述のデータが示すように
、第１従来例では成長膜厚の面内分布が十分に均一にな
らず、第２従来例ではその面内分布の不均一性のみなら
ず膜成長レートが第１従来例より小さくなる問題点があ
る。However, as shown in the data described below, in the first conventional example, the in-plane distribution of the grown film thickness is not sufficiently uniform, and in the second conventional example, not only the in-plane distribution is non-uniform, but also the in-plane distribution of the grown film thickness is not uniform enough. There is a problem that the growth rate is lower than that of the first conventional example.
【００１１】前者の面内分布の不均一性は、膜成長レー
トに最もセンシティブで流量を最も小さくするガス４ｂ
の混合にむらがあることに起因し、後者の膜成長レート
の低下は、ガス混合容器６に流入するガス４ｂと４ｃの
間で流量の大きなガス４ｃにより流量の小さなガス４ｂ
の流入が阻まれて、ガス４ｂの処理チャンバ２への導入
流量が見込みより小さくなることに起因するものと考え
られる。The former non-uniformity in the in-plane distribution is most sensitive to the film growth rate and the gas 4b which causes the smallest flow rate.
The decrease in the film growth rate of the latter is due to uneven mixing of the gases 4b and 4c flowing into the gas mixing container 6.
This is considered to be due to the fact that the flow rate of the gas 4b into the processing chamber 2 becomes smaller than expected because the inflow of the gas 4b is blocked.
【００１２】この問題は、上述と同様な構成をなす他の
気相処理装置例えばエッチング装置などにおいても同様
である。そこで本発明は、処理チャンバに複数のガスを
導入して基板を処理するＣＶＤ装置やエッチング装置な
どの気相処理装置に関して、基板に対する処理のレート
と面内分布均一性を確保するために、導入する複数のガ
スが見込み通りの流量で導入され且つ均一に混合される
ようにすることを目的とする。[0012] This problem also occurs in other vapor phase processing apparatuses, such as etching apparatuses, having the same configuration as described above. Therefore, the present invention introduces a method for ensuring a processing rate and in-plane distribution uniformity for a substrate with respect to a vapor phase processing apparatus such as a CVD apparatus or an etching apparatus that processes a substrate by introducing a plurality of gases into a processing chamber. The purpose is to allow a plurality of gases to be introduced at expected flow rates and uniformly mixed.
【００１３】[0013]
【課題を解決するための手段】上記目的を達成するため
に、本発明の気相処理装置は、処理チャンバに複数のガ
スを導入して基板を処理する装置であって、前記複数の
ガスの中の二つ以上のガスを前記処理チャンバへの導入
の前に混合させるガス混合容器を備え、該ガスの各々を
そのガス供給配管から該ガス混合容器へ流入させるガス
供給口の少なくとも一つは、開口の大きさが該ガス供給
配管の内径より小さく且つ該ガス混合容器内に突出して
いることを特徴としている。[Means for Solving the Problems] In order to achieve the above object, the vapor phase processing apparatus of the present invention is an apparatus for processing a substrate by introducing a plurality of gases into a processing chamber, wherein a gas mixing vessel for mixing two or more gases therein prior to introduction into the processing chamber; at least one gas supply port for allowing each of the gases to flow from its gas supply piping into the gas mixing vessel; , the size of the opening is smaller than the inner diameter of the gas supply pipe and protrudes into the gas mixing container.
【００１４】そして、前記ガス混合容器内に突出するガ
ス供給口は前記ガス供給配管の先端に接続したノズルに
より形成されていること、また、前記ノズルは前記ガス
供給配管に着脱可能であることが望ましい。[0014]The gas supply port protruding into the gas mixing container is formed by a nozzle connected to the tip of the gas supply pipe, and the nozzle is detachable from the gas supply pipe. desirable.
【００１５】[0015]
【作用】上記ガス混合容器において、その内に突出する
ガス流入口から流入するガスは、流量が小さくとも上記
開口の大きさにより流速が大きくなり然も流入箇所が内
部にあるので、他の流入流量の大きなガスにより阻まれ
ることなく見込み通りの流量で流入して均一に混合する
。[Operation] In the above gas mixing container, even if the flow rate of the gas flowing in from the gas inflow port protruding into the container is small, the flow velocity becomes large depending on the size of the above opening, but since the inflow point is inside, other inflows cannot be avoided. The gas flows in at the expected flow rate and mixes uniformly without being blocked by a large flow rate of gas.
【００１６】従って、このガス流入口を膜成長レートに
最もセンシティブで流量を最も小さくするガスに用いる
ことにより、処理チャンバに導入する複数のガスが見込
み通りの流量で導入され且つ均一に混合されるようにな
る。Therefore, by using this gas inlet for the gas that is most sensitive to the film growth rate and has the lowest flow rate, the plurality of gases introduced into the processing chamber can be introduced at expected flow rates and uniformly mixed. It becomes like this.
【００１７】そして、上記ノズルは所望するガス供給口
の実現を容易にし、また、ノズルの着脱可能は、寸法の
異なるノズルとの交換によりガス流量に応じたガス供給
口の大きさと配置箇所の選択を可能にさせる。The above-mentioned nozzle makes it easy to realize a desired gas supply port, and the nozzle is detachable, allowing selection of the size and location of the gas supply port according to the gas flow rate by replacing the nozzle with a nozzle of a different size. make it possible.
【００１８】[0018]
【実施例】以下本発明による気相処理装置の実施例につ
いて図１を用いて説明する。図１は実施例の装置概略図
（ａ） とガス混合容器断面図（ｂ） であり、全図
を通し同一符号は同一対象物を示す。[Embodiment] An embodiment of the vapor phase treatment apparatus according to the present invention will be described below with reference to FIG. FIG. 1 shows a schematic diagram (a) of an apparatus and a sectional view (b) of a gas mixing container according to an embodiment, and the same reference numerals indicate the same objects throughout the figures.
【００１９】図１において、この実施例は先に説明した
第２従来例（図３）を改良したものであり、第２従来例
のガス混合容器６が図１（ｂ） に詳細を示すガス混合
容器７に変わっている。７ｂ，７ｃはガス混合容器７の
供給配管接続口、７ｄ，７ｅは同じくガス流出口、８ｂ
，８ｃはノズル、９ｂ，９ｃはガス供給口、である。In FIG. 1, this embodiment is an improvement on the second conventional example (FIG. 3) described above, and the gas mixing container 6 of the second conventional example is configured to contain gas as shown in detail in FIG. 1(b). It has changed to mixing container 7. 7b and 7c are the supply pipe connection ports of the gas mixing container 7, 7d and 7e are the same gas outlet ports, and 8b
, 8c are nozzles, and 9b, 9c are gas supply ports.
【００２０】ガス混合容器７は、供給配管接続口７ｂ，
７ｃにガス供給配管３ｂ，３ｃが先端嵌入状態に接続さ
れ、ガス流出口７ｄ，７ｅが処理チャンバ２のガス導入
口２ｂ，２ｃに接続されている。そして、ガス供給配管
３ｂ，３ｃの先端にはノズル８ｂ，８ｃが螺合により着
脱可能に接続されている。The gas mixing container 7 has a supply pipe connection port 7b,
Gas supply pipes 3b and 3c are connected to 7c with their tips fitted, and gas outlet ports 7d and 7e are connected to gas inlet ports 2b and 2c of the processing chamber 2. Nozzles 8b and 8c are removably connected to the tips of the gas supply pipes 3b and 3c by screwing.
【００２１】ノズル８ｂ，８ｃは、先端がガス供給配管
３ｂ，３ｃの内径より小さな開口のガス供給口９ｂ，９
ｃとなっており、ガス混合容器７内に突出したガス供給
口９ｂ，９ｃからガス４ｂ，４ｃをガス混合容器７へ流
入させる。The nozzles 8b, 8c have gas supply ports 9b, 9 whose tips are smaller than the inner diameter of the gas supply pipes 3b, 3c.
c, and the gases 4b and 4c are made to flow into the gas mixing container 7 from the gas supply ports 9b and 9c protruding into the gas mixing container 7.
【００２２】従って、ガス供給配管３ｂ，３ｃからのガ
ス４ｂ，４ｃは、処理チャンバ２の減圧に伴う差圧によ
りガス混合容器７に流入するが、一方の流量が他方のそ
れより小さくとも先に述べた理由により見込み通りの流
量で流入して均一に混合し、それぞれの流量が所望を満
たし且つ均一な混合状態で処理チャンバ２に導入される
。Therefore, the gases 4b and 4c from the gas supply pipes 3b and 3c flow into the gas mixing container 7 due to the differential pressure caused by the reduced pressure in the processing chamber 2, but even if the flow rate of one is smaller than that of the other, the gases 4b and 4c flow first. For the reasons stated above, the components flow in at expected flow rates and are mixed uniformly, and each flow rate satisfies the desired flow rate and is introduced into the processing chamber 2 in a uniformly mixed state.
【００２３】処理チャンバ２に導入された混合状態のガ
ス４ｂ，４ｃと単独のガス４ａは、処理チャンバ２内で
混合して第１従来例の場合と同様に基板１上に膜を形成
してガス排出口２ｄから排出される。The mixed gases 4b and 4c and the single gas 4a introduced into the processing chamber 2 are mixed in the processing chamber 2 to form a film on the substrate 1 as in the case of the first conventional example. The gas is discharged from the gas discharge port 2d.
【００２４】以上のことから、膜成長レートに最もセン
シティブで流量を最も小さくするガスをガス４ｂまたは
４ｃに充当することにより、処理チャンバ２に導入する
複数のガス４ａ〜４ｃが見込み通りの流量で導入され且
つ均一に混合されるようになり、基板１に対する膜成長
レートと成長膜厚の面内分布均一性が確保される。From the above, by assigning the gas that is most sensitive to the film growth rate and that minimizes the flow rate to the gas 4b or 4c, the plurality of gases 4a to 4c introduced into the processing chamber 2 can be fed at the expected flow rate. They are introduced and mixed uniformly, ensuring uniformity in the film growth rate and in-plane distribution of the grown film thickness on the substrate 1.
【００２５】本発明者は、実施例及び第１第２従来例の
それぞれで以下に述べるタングステンの膜成長を行い、
実施例が優れていることを確認した。この膜成長は、導
入ガスにＷＦ６ ， ＳｉＨ４ ，Ｈ２ を用い、Ｓｉ
Ｈ４ が膜成長レートに極めてセンシティブで流量を最
も小さくするガスであることから、上記の確認に好適な
ものである。The present inventor performed the following tungsten film growth in each of the embodiment and the first and second conventional examples.
It was confirmed that the example was excellent. This film growth uses WF6, SiH4, and H2 as introduced gases, and Si
Since H4 is extremely sensitive to the film growth rate and is the gas that minimizes the flow rate, it is suitable for the above confirmation.
【００２６】膜成長の条件は次の通りである。
ガス４ａ ： ＷＦ６ ５ ｓｃｃｍ
配管３ａ内径 ９．５ｍｍφ ガス４ｂ
： ＳｉＨ４ ３ ｓｃｃｍ 配管３ｂ内径
６．４ｍｍφ 供給口９ｂ径 ０．５ｍｍφ
ガス４ｃ ： Ｈ２ １００ ｓｃｃｍ 配
管３ｃ内径 ６．４ｍｍφ 供給口９ｃ径 １．０ｍ
ｍφ チャンバ２圧力： ３０ ｍＴｏｒｒ
基板１温度 ： ３００ ℃そして得ら
れた結果は次の通りである。The conditions for film growth are as follows. Gas 4a: WF6 5 sccm
Piping 3a inner diameter 9.5mmφ Gas 4b
: SiH4 3 sccm Piping 3b inner diameter
6.4mmφ Supply port 9b diameter 0.5mmφ
Gas 4c: H2 100 sccm Piping 3c inner diameter 6.4mmφ Supply port 9c diameter 1.0m
mφ Chamber 2 pressure: 30 mTorr
Substrate 1 temperature: 300° C. The results obtained are as follows.
【００２７】
実施例 第１従来例 第２従来
例 成長レート（Å／ｍ） １０００
１０００ ８
６０ 面内分布 （ ％ ）
５ １０
１３ 第１第２従来例による結果は先に問題
点として述べた通りであり、それと比べて実施例による
結果は格段に優れている。[0027]
Example 1st conventional example 2nd conventional example Growth rate (Å/m) 1000
1000 8
60 In-plane distribution (%)
5 10
13 The results of the first and second conventional examples are as described above as problems, and compared to them, the results of the example are much better.
【００２８】上述した実施例による膜成長においては、
先の説明から明らかなように流量が小さいガス４ｂのガ
ス混合容器７への流入と混合が肝心なところであること
から、流量が大きいガス４ｃのガス供給配管３ｃがノズ
ル８ｃを接続せず且つガス混合容器７内に嵌入なしで供
給配管接続口７ｃに接続されていても、ほぼ同様な結果
を得ることができる。In the film growth according to the above embodiment,
As is clear from the above description, it is important to flow the gas 4b with a small flow rate into the gas mixing container 7 and mix it, so the gas supply pipe 3c for the gas 4c with a large flow rate is not connected to the nozzle 8c and Even if it is connected to the supply pipe connection port 7c without being inserted into the mixing container 7, substantially the same results can be obtained.
【００２９】また、ノズル８ｂは、ガス供給配管３ｂに
螺合接続であることから、長さやガス供給口９ｂの開口
径を変えた他のノズル８ｂに交換可能であり、種々の寸
法のものを用意することによりガス４ｂの流量に応じて
最も適したものを選択することができる。この点はノズ
ル８ｃにおいても同様である。Furthermore, since the nozzle 8b is threadedly connected to the gas supply pipe 3b, it can be replaced with another nozzle 8b having a different length or opening diameter of the gas supply port 9b, and can be used in various sizes. By preparing them, it is possible to select the most suitable one according to the flow rate of the gas 4b. This also applies to the nozzle 8c.
【００３０】なお、実施例の気相処理装置はＣＶＤ装置
を例にとって説明したが、本発明がＣＶＤ装置に限定さ
れることなく他の気相処理装置例えばエッチング装置な
どにおいても有効であることは、改めて説明するまでも
なく明らかである。Although the vapor phase processing apparatus of the embodiment has been explained using a CVD apparatus as an example, the present invention is not limited to the CVD apparatus, but is also effective in other vapor phase processing apparatuses such as etching apparatuses. , it is obvious that there is no need to explain it again.
【００３１】[0031]
【発明の効果】以上説明したように本発明によれば、処
理チャンバに複数のガスを導入して基板を処理するＣＶ
Ｄ装置やエッチング装置などの気相処理装置に関して、
導入する複数のガスが見込み通りの流量で導入され且つ
均一に混合されるようにすることができて、基板に対す
る処理のレートと面内分布均一性が確保され、例えば半
導体装置の品質向上を可能にさせる効果がある。As explained above, according to the present invention, a CV system that processes a substrate by introducing a plurality of gases into a processing chamber can be used.
Regarding vapor phase processing equipment such as D equipment and etching equipment,
Multiple gases can be introduced at the expected flow rate and mixed uniformly, ensuring the processing rate and in-plane distribution uniformity for the substrate, making it possible to improve the quality of semiconductor devices, for example. It has the effect of making you
【図１】 実施例の装置概略図（ａ） とガス混合容
器断面図（ｂ） である。FIG. 1 is a schematic diagram of an apparatus according to an embodiment (a) and a cross-sectional diagram of a gas mixing container (b).
【図２】 第１従来例の装置概略図である。FIG. 2 is a schematic diagram of a first conventional device.
【図３】 第２従来例の装置概略図（ａ） とガス混
合容器断面図（ｂ）である。FIG. 3 is a schematic diagram of a second conventional device (a) and a sectional view of a gas mixing container (b).
１ 基板
２ 処理チャンバ
２ａ〜２ｃ ガス導入口
２ｄ ガス排出口
３ａ〜３ｃ ガス供給配管
４ａ〜４ｃ 処理チャンバに導入するガス５ 加熱
ランプ
６，７ ガス混合容器
６ｂ，６ｃ ガス供給口
７ｂ，７ｃ 供給配管接続口
６ｄ，７ｄ，７ｅ ガス流出口
８ｂ，８ｃ ノズル
９ｂ，９ｃ ガス供給口1 Substrate 2 Processing chambers 2a-2c Gas inlet 2d Gas outlet 3a-3c Gas supply piping 4a-4c Gas introduced into the processing chamber 5 Heat lamps 6, 7 Gas mixing containers 6b, 6c Gas supply ports 7b, 7c Supply piping Connection ports 6d, 7d, 7e Gas outlets 8b, 8c Nozzles 9b, 9c Gas supply ports
Claims (3)
基板を処理する装置であって、前記複数のガスの中の二
つ以上のガスを前記処理チャンバへの導入の前に混合さ
せるガス混合容器を備え、該ガスの各々をそのガス供給
配管から該ガス混合容器へ流入させるガス供給口の少な
くとも一つは、開口の大きさが該ガス供給配管の内径よ
り小さく且つ該ガス混合容器内に突出していることを特
徴とする気相処理装置。1. An apparatus for processing a substrate by introducing a plurality of gases into a processing chamber, the gas mixing device comprising mixing two or more gases among the plurality of gases before introduction into the processing chamber. At least one of the gas supply ports for allowing each of the gases to flow into the gas mixing container from the gas supply piping has an opening size smaller than the inner diameter of the gas supply piping and is located within the gas mixing container. A gas phase treatment device characterized by a protruding part.
給口は、前記ガス供給配管の先端に接続したノズルによ
り形成されていることを特徴とする請求項１記載の気相
処理装置。2. The gas phase processing apparatus according to claim 1, wherein the gas supply port protruding into the gas mixing container is formed by a nozzle connected to the tip of the gas supply pipe.
可能であることを特徴とする請求項２記載の気相処理装
置。3. The gas phase processing apparatus according to claim 2, wherein the nozzle is detachable from the gas supply pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP40471390A JP2949852B2 (en) | 1990-12-21 | 1990-12-21 | Gas phase processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP40471390A JP2949852B2 (en) | 1990-12-21 | 1990-12-21 | Gas phase processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04221077A true JPH04221077A (en) | 1992-08-11 |
| JP2949852B2 JP2949852B2 (en) | 1999-09-20 |
Family
ID=18514369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP40471390A Expired - Lifetime JP2949852B2 (en) | 1990-12-21 | 1990-12-21 | Gas phase processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2949852B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006302946A (en) * | 2005-04-15 | 2006-11-02 | Hitachi Kokusai Electric Inc | Substrate processing system |
| WO2009104732A1 (en) * | 2008-02-20 | 2009-08-27 | 東京エレクトロン株式会社 | Gas supply device |
| WO2021157445A1 (en) * | 2020-02-05 | 2021-08-12 | 東京エレクトロン株式会社 | Plasma treatment apparatus and gas flow-rate control method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101950988B1 (en) * | 2017-05-11 | 2019-02-22 | (주)엔피홀딩스 | Nozzle for jetting mixed-phase fluid |
-
1990
- 1990-12-21 JP JP40471390A patent/JP2949852B2/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006302946A (en) * | 2005-04-15 | 2006-11-02 | Hitachi Kokusai Electric Inc | Substrate processing system |
| JP4717495B2 (en) * | 2005-04-15 | 2011-07-06 | 株式会社日立国際電気 | Substrate processing system |
| WO2009104732A1 (en) * | 2008-02-20 | 2009-08-27 | 東京エレクトロン株式会社 | Gas supply device |
| US8945306B2 (en) | 2008-02-20 | 2015-02-03 | Tokyo Electron Limited | Gas supply device |
| WO2021157445A1 (en) * | 2020-02-05 | 2021-08-12 | 東京エレクトロン株式会社 | Plasma treatment apparatus and gas flow-rate control method |
| JP2021125566A (en) * | 2020-02-05 | 2021-08-30 | 東京エレクトロン株式会社 | Plasma processing apparatus and gas flow rate adjustment method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2949852B2 (en) | 1999-09-20 |
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