JPH04213825A - Manufacture of compound semiconductor device - Google Patents
Manufacture of compound semiconductor deviceInfo
- Publication number
- JPH04213825A JPH04213825A JP40132890A JP40132890A JPH04213825A JP H04213825 A JPH04213825 A JP H04213825A JP 40132890 A JP40132890 A JP 40132890A JP 40132890 A JP40132890 A JP 40132890A JP H04213825 A JPH04213825 A JP H04213825A
- Authority
- JP
- Japan
- Prior art keywords
- gaas
- compound semiconductor
- semiconductor device
- substrate
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 150000001875 compounds Chemical class 0.000 title claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000012298 atmosphere Substances 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims abstract description 8
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims abstract description 5
- 230000001590 oxidative effect Effects 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 21
- 238000001035 drying Methods 0.000 claims description 9
- 238000005406 washing Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 230000007935 neutral effect Effects 0.000 claims 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 abstract 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 11
- 239000010410 layer Substances 0.000 description 11
- 239000000203 mixture Substances 0.000 description 10
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 8
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 7
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 6
- 235000011114 ammonium hydroxide Nutrition 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000007654 immersion Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は化合物半導体装置の製造
方法に関し、特にＧａＡｓ半導体装置の製造過程におけ
るＧａＡｓ基板表面の酸化物層の除去方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a compound semiconductor device, and more particularly to a method for removing an oxide layer on the surface of a GaAs substrate during the manufacturing process of a GaAs semiconductor device.
【０００２】0002
【従来の技術】近年、ＧａＡｓをはじめとする化合物半
導体装置の利用が広がっている。化合物半導体にショッ
トキ接合を形成する場合、または化合物半導体基板上に
エピタキシャル成長を行う場合、表面の酸化物層を除去
し、しかもストイキオメトリを良好に保つ必要がある。2. Description of the Related Art In recent years, compound semiconductor devices including GaAs have been widely used. When forming a Schottky junction in a compound semiconductor or performing epitaxial growth on a compound semiconductor substrate, it is necessary to remove the oxide layer on the surface and maintain good stoichiometry.
【０００３】Ｊ．Ｍａｓｓｉｅｓ らはＧａＡｓ基板の
｛００１｝ 面をＨ２ＳＯ４，Ｈ２Ｏ２，Ｈ２Ｏ溶液で
エッチングすると、従来考えられていたのとは異なって
、基板表面には酸化物膜が生じないこと、酸化された相
はエッチングされた表面と大気中の酸素が汚染元素、特
に炭素核種等の存在下で接触することによって生じるこ
とを報告している（Ｊ．Ａｐｐｌ． Ｐｈｙｓ．５８（
２）， ｐｐ８０６〜８１０， １９８５ 参照） 。
一方Ｈ． Ｓｕｇａｗａｒａ らはＣＦ４＋Ｏ２プラズ
マにさらされたＧａＡｓ表面に生成する酸化物の主成分
がＧａ２Ｏ３ であること、このＧａ２Ｏ３ 層をＮＨ
４ＯＨ とＮＨ４Ｆの混合液でエッチング除去すること
によって、ＭＥＳＦＥＴのＩ−Ｖ 特性が改善されるこ
とを報告している（Ｊ． Ｖａｃ． Ｓｃｉ． Ｔｅｃ
ｈｎｏｌ． Ｂ３（６）， ｐｐ１６０９〜１６１３，
１９８５参照）。しかし、Ｓｕｇａｗａｒａらにおいて
は、エッチング後の結晶表面のストイキオメトリは考慮
されていない。[0003]J. Massies et al. etched the {001} plane of a GaAs substrate with H2SO4, H2O2, and H2O solutions, and found that, contrary to what was previously thought, no oxide film was formed on the substrate surface, and that the oxidized phase was etched away. It has been reported that this is caused by contact between the exposed surface and atmospheric oxygen in the presence of contaminant elements, particularly carbon nuclides (J. Appl. Phys. 58 (J. Appl. Phys. 58).
2), pp. 806-810, 1985). On the other hand, H. Sugawara et al. found that the main component of the oxide formed on the GaAs surface exposed to CF4 + O2 plasma was Ga2O3, and that this Ga2O3 layer was
It has been reported that the IV characteristics of MESFET can be improved by etching with a mixture of 4OH and NH4F (J. Vac. Sci. Tec.
hnol. B3(6), pp1609-1613,
(see 1985). However, Sugawara et al. do not consider the stoichiometry of the crystal surface after etching.
【０００４】0004
【発明が解決しようとする課題】ＧａＡｓ基板上に半導
体装置を形成する場合、絶縁膜などを反応性イオンエッ
チングするため、あるいはフォトレジストの灰化処理の
ために、ＧａＡｓ表面が酸素ガスを含むプラズマにさら
されることがある。この時、ＧａＡｓの表面には厚い酸
化物層が形成される。以後の工程のためには、この酸化
物を除去しなければならず、しかも、その際ＧａＡｓの
組成比が化学量論比からずれないことが必要であり、し
かも酸化物を除去した後に、新たに酸化膜が形成されな
い様にする必要がある。しかし、上述した従来の方法で
は、これらの諸点について、必ずしも十分な結果が得ら
れていない。[Problems to be Solved by the Invention] When forming a semiconductor device on a GaAs substrate, the GaAs surface is exposed to plasma containing oxygen gas for reactive ion etching of an insulating film or for ashing of photoresist. May be exposed to. At this time, a thick oxide layer is formed on the surface of GaAs. For subsequent steps, this oxide must be removed, and in doing so, it is necessary that the composition ratio of GaAs does not deviate from the stoichiometric ratio. It is necessary to prevent an oxide film from forming on the surface. However, the conventional methods described above do not necessarily provide sufficient results in these respects.
【０００５】本発明は、ＧａＡｓ表面に形成された酸化
物を十分に除去し、しかも表面の組成が化学量論比から
ずれず、従って以後の工程によってすぐれた特性の化合
物半導体装置を製造し得る方法を提供することを目的と
する。According to the present invention, the oxide formed on the GaAs surface is sufficiently removed, and the composition of the surface does not deviate from the stoichiometric ratio, so that a compound semiconductor device with excellent characteristics can be manufactured in subsequent steps. The purpose is to provide a method.
【０００６】[0006]
【課題を解決するための手段】このような目的を達成す
るために、本発明は、ＧａＡｓ結晶表面のＧａ酸化物層
を除去する工程と、前記結晶表面に残されたＡｓ過剰層
を除去する工程とを有することを特徴とする。[Means for Solving the Problems] In order to achieve the above object, the present invention includes a step of removing a Ga oxide layer on the surface of a GaAs crystal, and a step of removing an excess As layer left on the surface of the crystal. It is characterized by having a process.
【０００７】さらに本発明は、ＧａＡｓ基板をフッ化ア
ンモニウム液に浸漬し、水洗し、非酸化性雰囲気中で乾
燥する工程と、該乾燥された基板をアンモニア系腐食液
に浸漬し、水洗し、非酸化性雰囲気中で乾燥する工程を
含むことを特徴とする。The present invention further includes the steps of immersing a GaAs substrate in an ammonium fluoride solution, washing with water, and drying in a non-oxidizing atmosphere; immersing the dried substrate in an ammonia-based corrosive solution and washing with water; The method is characterized by including a step of drying in a non-oxidizing atmosphere.
【０００８】[0008]
【作用】本発明においては、例えばＯ２を含むプラズマ
にさらされてＧａＡｓ表面に厚く形成された酸化物、特
にＧａ２Ｏ３ を９０％から１００ ％の純度のフッ化
アンモニウム（ＮＨ４Ｆ）液によってまず除去する。次
にＧａ２Ｏ３ の除去によってＡｓリッチになった表面
層を、ＮＨ４ＯＨ，Ｈ２Ｏ２，Ｈ２Ｏの混合液によって
除去する。そのために、ＧａＡｓ表面の酸化物は除去さ
れ、しかもＧａＡｓ表面の組成は、化学量論比に保たれ
る。In the present invention, for example, oxides, particularly Ga2O3, which have formed thickly on the GaAs surface by exposure to O2-containing plasma are first removed using an ammonium fluoride (NH4F) solution with a purity of 90% to 100%. Next, the surface layer which has become rich in As due to the removal of Ga2O3 is removed using a mixed solution of NH4OH, H2O2, and H2O. Therefore, the oxide on the GaAs surface is removed, and the composition of the GaAs surface is maintained at a stoichiometric ratio.
【０００９】[0009]
【実施例】以下、図面を参照して本発明の実施例を詳細
に説明する。Embodiments Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
【００１０】ＧａＡｓ単結晶基板を反応性イオンエッチ
ング装置に装填し、ＣＦ２ とＯ２よりなるプラズマに
さらして表面に厚い酸化膜を形成した。この表面が酸化
された基板の表面をオージェ電子分光（ＡＥＳ）によっ
て分析した。図１は、ＡＥＳ によるＧａ，Ａｓ，Ｏお
よびＣの深さ方向の分布を示す。図に示されるように、
表面から数十オングストロームの深さにわたって０が存
在するのでこの範囲に酸化物が形成されていることがわ
かる。また、表面におけるＧａ原子の量はＡｓ原子より
多く、従って酸化物の主成分はＧａ２Ｏ３ であると結
論づけることができる。[0010] A GaAs single crystal substrate was loaded into a reactive ion etching apparatus and exposed to plasma consisting of CF2 and O2 to form a thick oxide film on the surface. The surface of this oxidized substrate was analyzed by Auger electron spectroscopy (AES). FIG. 1 shows the depth distribution of Ga, As, O, and C by AES. As shown in the figure,
Since zero exists over a depth of several tens of angstroms from the surface, it can be seen that oxide is formed in this range. Furthermore, the amount of Ga atoms on the surface is greater than that of As atoms, so it can be concluded that the main component of the oxide is Ga2O3.
【００１１】次に同一条件で酸化膜を形成した他のＧａ
Ａｓ基板を９０％から１００ ％の純度の高いフッ化ア
ンモニウム（ＮＨ４Ｆ）液に浸漬した。浸漬時間は酸化
物の厚さによって変化するが、この場合は５分間とした
。ついで、純水（好ましくは １８．０ＭΩ・ｃｍ 以
上）の流水中に基板を浸し、ＮＨ４Ｆを洗い去った。洗
浄時間は１分間またはそれ以上で十分である。さらに水
洗いした基板を窒素雰囲気中のスピンドライヤで乾燥し
た。この様な工程を経た基板表面のＡＥＳ 分析を行っ
た。図２にＧａ，Ａｓ，ＯおよびＣの深さ方向の分布を
示す。図１と比較してみるとＧａおよびＯの含有率が減
少し、酸化物であるＧａ２Ｏ３ が除去されたことが示
されている。Ｏの含有率は自然吸着のレベルと同等であ
って、これは水洗後、基板をＡＥＳ 分析にかける間に
生じたものと思われる。同時に、図２はＧａ２Ｏ３ の
除去に基づくＧａの減少に伴って、基板表面のＡｓ濃度
が高く、その組成がストイキオメトリからかなりずれて
いることを示している。Next, another Ga oxide film was formed under the same conditions.
An As substrate was immersed in ammonium fluoride (NH4F) solution with a high purity of 90% to 100%. The immersion time varied depending on the thickness of the oxide, but in this case it was 5 minutes. Next, the substrate was immersed in running pure water (preferably 18.0 MΩ·cm or higher) to wash away the NH4F. A cleaning time of 1 minute or more is sufficient. Furthermore, the washed substrate was dried using a spin dryer in a nitrogen atmosphere. An AES analysis of the surface of the substrate that underwent such a process was performed. FIG. 2 shows the distribution of Ga, As, O, and C in the depth direction. Comparison with FIG. 1 shows that the contents of Ga and O have decreased, indicating that the oxide Ga2O3 has been removed. The O content is comparable to the level of natural adsorption, which appears to have occurred during AES analysis of the substrates after water washing. At the same time, Figure 2 shows that with the decrease of Ga due to the removal of Ga2O3, the As concentration on the substrate surface is high and its composition deviates considerably from the stoichiometry.
【００１２】次に、酸化膜の形成，Ｇａ２Ｏ３ の除去
および水洗，乾燥までを同一の条件で行った他のＧａＡ
ｓ基板をＮＨ４ＯＨ：Ｈ２Ｏ２：Ｈ２Ｏ＝５：２：４０
００ の水溶液に浸漬して、表面のＡｓ過剰層を除去し
た。浸漬時間は基板表面におけるＡｓ原子の過剰度，あ
るいは除去されたＧａ２Ｏ３ 層の厚さによるが、１分
以上、好ましくは３分ないし５分間の浸漬が適当である
。次に純水の流水中に１分またはそれ以上浸して水洗し
、さらに窒素雰囲気中のスピンドライヤで乾燥した。水
洗後、乾燥までの間、大気に触れる時間を極力短くし、
可能ならば全く大気に触れずに乾燥させることが好まし
い。この様にして乾燥した基板表面のＡＥＳ分析結果を
図３に示す。酸素の含有率は自然吸着のレベルであって
、この基板の表面は極めて清浄である。Ｇａ原子とＡｓ
原子の存在比は殆んど１：１であって、正しくストイキ
オメトリが保たれ、Ａｓ過剰層が完全に除去されたこと
を示している。[0012] Next, other GaA samples were prepared in which the formation of an oxide film, removal of Ga2O3, washing with water, and drying were performed under the same conditions.
s substrate NH4OH:H2O2:H2O=5:2:40
The excess As layer on the surface was removed by immersion in a 0.00 aqueous solution. The immersion time depends on the degree of excess of As atoms on the substrate surface or the thickness of the removed Ga2O3 layer, but immersion for 1 minute or more, preferably 3 to 5 minutes, is appropriate. Next, it was washed by immersing it in running pure water for 1 minute or more, and then dried in a spin dryer in a nitrogen atmosphere. After washing with water and before drying, minimize the time of exposure to the atmosphere,
If possible, it is preferable to dry without exposing it to the atmosphere at all. FIG. 3 shows the results of AES analysis of the surface of the substrate dried in this manner. The oxygen content is at the level of natural adsorption, and the surface of this substrate is extremely clean. Ga atoms and As
The abundance ratio of atoms was almost 1:1, indicating that correct stoichiometry was maintained and the As excess layer was completely removed.
【００１３】この様に、本発明によれば、清浄でかつ化
学量論理的に正常なＧａＡｓ表面が得られるので、金属
とのショットキ接合を形成すると、ショットキバリアハ
イトの大きなものが得られる。例えば、Ｏ２プラズマに
さらした直後のＧａＡｓウエハに形成したＴｉ金属電極
とのショットキバリアハイトが０．６ｅＶ であったの
に対し、本発明に従って処理されたＧａＡｓウエハに形
成されたＴｉ金属電極とのショットキバリアハイトは０
．７５〜０．８０ｅＶであった。As described above, according to the present invention, a clean and stoichiometrically normal GaAs surface can be obtained, so that when a Schottky junction is formed with a metal, a large Schottky barrier height can be obtained. For example, the Schottky barrier height between Ti metal electrodes formed on GaAs wafers immediately exposed to O2 plasma was 0.6 eV, while that between Ti metal electrodes formed on GaAs wafers processed according to the present invention was 0.6 eV. Schottky barrier height is 0
．． It was 75 to 0.80 eV.
【００１４】なお、図１から図３の各図において、表面
から深くなるに従ってＧａ原子の含有率がＡｓ原子の含
有率より多くなっている。これはＡＥＳ による深さ方
向の分布の測定がＡｒイオンによるスパッタリングによ
って表面を削りながら行われるが、このスパッタリング
に際し、Ａｓ原子がＧａ原子よりも飛散し易いためであ
って、化学量論比からのずれを意味するものではない。In each of FIGS. 1 to 3, the content of Ga atoms becomes greater than the content of As atoms as the depth increases from the surface. This is because the measurement of the distribution in the depth direction by AES is performed while scraping the surface by sputtering with Ar ions, and during this sputtering, As atoms scatter more easily than Ga atoms. This does not mean a deviation.
【００１５】Ｇａ２Ｏ３ を除去するために、ＮＨ４Ｆ
にＮＨ４ＯＨ を混合した液を用いることも可能である
が、下地結晶に影響を与えずにＧａ２Ｏ３ のみを除去
するには、ＮＨ４Ｆの高純度原液を使用することが望ま
しい。次に上述した実施例では、Ａｓ過剰層を除去する
ための腐食液として、 ＮＨ４ＯＨ：Ｈ２Ｏ２：Ｈ２Ｏ
＝５：２：４０００ の液を示した。Ａｓ過剰な層を制
御性よくエッチング除去するためには、エッチング速度
は早すぎないことが望ましい。上に示した腐食液の組成
はそのための標準組成であって、ＮＨ４ＯＨ およびＨ
２Ｏ２の濃度は、それぞれこの組成から２０％〜３０％
程度ずれても差しつかえなく、その場合は浸漬時間を調
節すればよい。[0015] To remove Ga2O3, NH4F
It is also possible to use a mixture of NH4OH and NH4F, but in order to remove only Ga2O3 without affecting the underlying crystal, it is desirable to use a high purity stock solution of NH4F. Next, in the above-mentioned embodiment, NH4OH:H2O2:H2O was used as the corrosive solution for removing the As excess layer.
=5:2:4000 liquid. In order to remove the excess As layer by etching with good controllability, it is desirable that the etching rate is not too high. The composition of the etchant shown above is the standard composition for that purpose, consisting of NH4OH and H
The concentration of 2O2 is 20% to 30% from this composition, respectively.
There is no problem even if the degree differs, and in that case, the soaking time can be adjusted.
【００１６】[0016]
【発明の効果】以上説明した様に、本発明によれば、Ｇ
ａＡｓ表面の酸化物を完全に除去することができ、しか
も表面の組成はストイキオメトリを維持することができ
る。
従って、本発明によってすぐれた特性の化合物半導体装
置を製造することができる。[Effects of the Invention] As explained above, according to the present invention, G
Oxides on the aAs surface can be completely removed, and the surface composition can maintain stoichiometry. Therefore, according to the present invention, a compound semiconductor device with excellent characteristics can be manufactured.
【図１】図１はＧａＡｓウエハをプラズマにさらした直
後の元素分布を示す図である。FIG. 1 is a diagram showing the element distribution of a GaAs wafer immediately after it is exposed to plasma.
【図２】図２はＮＨ４Ｆによるエッチング，水洗，乾燥
後の元素分布を示す図である。FIG. 2 is a diagram showing the element distribution after etching with NH4F, washing with water, and drying.
【図３】図３はＮＨ４ＯＨ，Ｈ２Ｏ２，Ｈ２Ｏ混合液に
よるエッチング，水洗，乾燥後の元素分布を示す図であ
る。FIG. 3 is a diagram showing the element distribution after etching with a mixed solution of NH4OH, H2O2, and H2O, washing with water, and drying.
Claims (2)
去する工程と、前記結晶表面に残されたＡｓ過剰層を除
去する工程とを有することを特徴とする化合物半導体装
置の製造方法。1. A method for manufacturing a compound semiconductor device, comprising the steps of removing a Ga oxide layer on the surface of a GaAs crystal, and removing an excess As layer left on the surface of the crystal.
に浸漬し、水洗し、非酸化性雰囲気中で乾燥する工程と
、該乾燥された前記基板をアンモニア系腐食液に浸漬し
、水洗し、非酸化性雰囲気中で乾燥する工程を含むこと
を特徴とする化合物半導体装置の製造方法。2. A step of immersing a GaAs substrate in an ammonium fluoride solution, washing it with water, and drying it in a non-oxidizing atmosphere; immersing the dried substrate in an ammonia-based corrosive solution, washing it with water, and drying it in a non-oxidizing atmosphere. 1. A method for manufacturing a compound semiconductor device, comprising a step of drying in a neutral atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP40132890A JPH04213825A (en) | 1990-12-11 | 1990-12-11 | Manufacture of compound semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP40132890A JPH04213825A (en) | 1990-12-11 | 1990-12-11 | Manufacture of compound semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04213825A true JPH04213825A (en) | 1992-08-04 |
Family
ID=18511165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP40132890A Pending JPH04213825A (en) | 1990-12-11 | 1990-12-11 | Manufacture of compound semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04213825A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002071461A1 (en) * | 2001-03-06 | 2002-09-12 | Sumitomo Electric Industries, Ltd. | Method of manufacturing compound semiconductor wafer |
| US7078343B2 (en) | 2001-03-06 | 2006-07-18 | Sumitomo Electric Industries, Ltd. | Method of manufacturing compound semiconductor wafer |
| JP2012119636A (en) * | 2010-12-03 | 2012-06-21 | Fujitsu Ltd | Compound semiconductor device and method of manufacturing the same |
-
1990
- 1990-12-11 JP JP40132890A patent/JPH04213825A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002071461A1 (en) * | 2001-03-06 | 2002-09-12 | Sumitomo Electric Industries, Ltd. | Method of manufacturing compound semiconductor wafer |
| US7078343B2 (en) | 2001-03-06 | 2006-07-18 | Sumitomo Electric Industries, Ltd. | Method of manufacturing compound semiconductor wafer |
| CN100405553C (en) * | 2001-03-06 | 2008-07-23 | 住友电气工业株式会社 | Method of manufacturing compound semiconductor wafer |
| JP2012119636A (en) * | 2010-12-03 | 2012-06-21 | Fujitsu Ltd | Compound semiconductor device and method of manufacturing the same |
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