JPH04200617A - Exhaust gas treating system - Google Patents
Exhaust gas treating systemInfo
- Publication number
- JPH04200617A JPH04200617A JP2330014A JP33001490A JPH04200617A JP H04200617 A JPH04200617 A JP H04200617A JP 2330014 A JP2330014 A JP 2330014A JP 33001490 A JP33001490 A JP 33001490A JP H04200617 A JPH04200617 A JP H04200617A
- Authority
- JP
- Japan
- Prior art keywords
- exhaust gas
- plasma
- exhaust
- gas treatment
- equipment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 238000011282 treatment Methods 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 33
- 238000000354 decomposition reaction Methods 0.000 abstract description 7
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 72
- 210000002381 plasma Anatomy 0.000 description 19
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- 229910000077 silane Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 238000009434 installation Methods 0.000 description 4
- 239000003463 adsorbent Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- BKIMMITUMNQMOS-UHFFFAOYSA-N nonane Chemical compound CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QEHKBHWEUPXBCW-UHFFFAOYSA-N nitrogen trichloride Chemical compound ClN(Cl)Cl QEHKBHWEUPXBCW-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Treating Waste Gases (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は半導体製造プロセスで用いられる種々のガスの
うち、未使用のまま排出されるガスの処理方法に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for treating unused gases among various gases used in semiconductor manufacturing processes.
従来、半導体製造プロセスで放出される排ガスの処理は
、対象とするガスの種類に応した各種吸着剤を利用する
吸着方式で行われていた。この吸着方式による排ガス処
理は、処理すべき排ガスが高濃度あるいは大流量である
場合、必然的に吸着剤の交換頻度が高くなり、吸着剤の
交換コストがかさむという問題点があった。Conventionally, exhaust gases emitted during semiconductor manufacturing processes have been treated by adsorption methods that utilize various adsorbents depending on the type of target gas. Exhaust gas treatment using this adsorption method has a problem in that when the exhaust gas to be treated has a high concentration or a large flow rate, the frequency of replacing the adsorbent becomes high, which increases the cost of replacing the adsorbent.
〔発明が解決巳ようとする課題：
この問題点に対し、本発明者らはプラズマ放電を利用す
ることにより、高濃度あるいは大流量の排ガスを効率よ
く処理できることを見出し、さきに特開平１−１４３６
２７において、その技術の開示を行った。[Problem to be solved by the invention: To solve this problem, the present inventors discovered that high concentration or large flow rate of exhaust gas can be efficiently treated by using plasma discharge. 1436
In 27, the technology was disclosed.
プラズマ型排ガス処理装置においては、プラズマの形成
のために何らかの排気手段を必要とする。In a plasma-type exhaust gas treatment device, some kind of exhaust means is required for plasma formation.
本発明者らの先ｔｉｌｔ（特開平１〜１４３６２７）で
は、この排気手段として半導体製造プロセスのもつ真空
排気設備をそのまま利用しており、プラズマ型排ガス処
理装置の設置位置はプロセスナャンバーと真空排気設備
の間であった。この位置に設置することにより、プロセ
ス自体がもつ真空排気設備のポンプオイルの劣化防止の
効果を上げていた。しかしながら近年、オイルレスポン
プ化、ドライポンプ化が２、速に進行しており、ポンプ
オイルの劣化防止の効果は薄れてきており、逆にプロセ
スナャンバーと隣接していることがらくるプロセスに与
える影響が懸念されるようシ二なってきた。In the inventors' previous tilt (Japanese Unexamined Patent Publication No. 1-143627), the vacuum exhaust equipment of the semiconductor manufacturing process was used as the exhaust means, and the installation position of the plasma type exhaust gas treatment device was determined based on the process number and vacuum exhaust. It was between the facilities. By installing it in this position, it was effective in preventing deterioration of the pump oil in the vacuum pumping equipment that the process itself has. However, in recent years, the shift to oil-less pumps and dry pumps has progressed at a rapid pace, and the effectiveness of pump oil in preventing deterioration has diminished, and conversely, the fact that it is adjacent to the process number has an impact on the process. There are growing concerns about the impact.
また、プラズマ型排ガス処理装置としてもプロセスの制
約を受けやすく、排ガス処理条件が最適条件からはずれ
ることもしばしばであった。In addition, plasma-type exhaust gas treatment apparatuses are also susceptible to process constraints, and exhaust gas treatment conditions often deviate from optimal conditions.
本発明は、高濃度あるいは大流量の排ガス処理を行える
プラズマ型排ガス処理装置を用い、かつ半導体製造プロ
セスー二何ら影響を与えない半導体製造プロセス排ガス
の処理方式を提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for treating exhaust gas from a semiconductor manufacturing process, which uses a plasma type exhaust gas treatment apparatus that can treat exhaust gas at high concentration or at a large flow rate, and which does not affect the semiconductor manufacturing process in any way.
本発明においては、プラズマ型排ガス処理装置に新たに
専用の排気設備を付加し、これらを半導体製造プロセス
の排ガスの排気設備の後に設置することにより、上記課
題を解決するものである。In the present invention, the above-mentioned problem is solved by newly adding dedicated exhaust equipment to the plasma type exhaust gas treatment apparatus and installing these after the exhaust gas exhaust equipment of the semiconductor manufacturing process.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
本発明は半導体製造プロセスにおいて、よく用いられる
シラン、ノンラン、トリシラン、メチルシラン、ジメチ
ルンラン、テトラエトキシシラン、ジクロロノラン、ゲ
ルマン、ホスフィン、アルシン、ジボラン、三ツ、化窒
素などのガスを対象とし、半導体製造プロセスに一切影
響を与えることなしに、プロセスから排気されるこれら
の排ガスをプラズマ型排ガス処理装置を用いて処理する
排ガス処理方式である。The present invention targets gases commonly used in semiconductor manufacturing processes, such as silane, nonane, trisilane, methylsilane, dimethylsilane, tetraethoxysilane, dichloronorane, germane, phosphine, arsine, diborane, mitsu, and nitrogen chloride. This is an exhaust gas treatment method that uses a plasma type exhaust gas treatment device to treat these exhaust gases exhausted from the process without affecting the manufacturing process at all.
プラズマ型排ガス処理装置は被処理ガスを電極を設けた
ｌ ｍＴｏｒｒ〜Ｉ Ｔｏｒｒの減圧チャンバー内に導
入し、電極間に直流あるいは交流電圧を印加することに
よりプラズマ放電を引き起こし、被処理ガスを分解する
ものである。この処理により残存する被処理ガスの量は
処理前の０．０１％から１０％となる。Plasma-type exhaust gas treatment equipment introduces the gas to be treated into a reduced pressure chamber of l mTorr to I Torr equipped with electrodes, and applies a DC or AC voltage between the electrodes to cause plasma discharge and decompose the gas to be treated. It is something. As a result of this treatment, the amount of the remaining gas to be treated is reduced from 0.01% to 10% of the amount before treatment.
この時、吸着型の処理装置を併用することにより、なお
−層、被処理ガスの残存量が少ない排ガス処理システム
を構成することも容易である。At this time, by using an adsorption type treatment device in combination, it is easy to configure an exhaust gas treatment system in which the remaining amount of the gas to be treated is small.
また、磁束密度で１〜１０００００ガウス程度の磁界を
印加することによりプラズマ放電を維持し得る圧力範囲
を０．０１ ｍＴｏｒｒ ＝ １００ Ｔｏｒｒに広げ
ることも可能である。Furthermore, by applying a magnetic field with a magnetic flux density of about 1 to 100,000 Gauss, it is possible to expand the pressure range in which plasma discharge can be maintained to 0.01 mTorr = 100 Torr.
かかるプラズマ型排ガス処理装置二こおいては、その動
作原理上、減圧環境が必要であるが、本発明においては
プラズマ型排ガス処理装置己こ専用の排気手段を付加し
、半導体製造プロセス排ガスの排気側に設置するという
新しい概念を用いて、プロセスに影響を与えず、しかも
最適条件でプラズマ型排ガス処理装置を動作させうる排
ガス処理方式を完成した。Such plasma-type exhaust gas treatment equipment requires a reduced pressure environment due to its operating principle, but in the present invention, a dedicated exhaust means is added to the plasma-type exhaust gas treatment equipment to exhaust exhaust gas from the semiconductor manufacturing process. Using a new concept of side-mounting, we have completed an exhaust gas treatment system that does not affect the process and allows the plasma-type exhaust gas treatment equipment to operate under optimal conditions.
すなわち、第１図に示すごとく、プロセスチャンバー１
及び排気設備２の排気側にプラズマ型排ガス処理装置３
及び専用の排気設備４を設置することで、プロセスに一
切影響を与えない処理方式新たに付加する専用の排気設
備としては、プラズマ型排ガス処理装置の使用可能な圧
力範囲が、０．０１ ｍＴｏｒｒ〜１００ Ｔｏｒｒと
幅広いために、回転式分子ポンプ、メカニカルブースタ
ーポンプ、油回転ポンプ、ルーツ型ポンプ、水封式ポン
プ、往復動式ポンプなどが通用可能で、幅広い選択が可
能である。That is, as shown in FIG.
and a plasma type exhaust gas treatment device 3 on the exhaust side of the exhaust equipment 2.
By installing a dedicated exhaust equipment 4, a processing method that does not affect the process at all. As a newly added dedicated exhaust equipment, the usable pressure range of the plasma type exhaust gas treatment equipment is 0.01 mTorr ~ Due to the wide range of 100 Torr, rotary molecular pumps, mechanical booster pumps, oil rotary pumps, Roots type pumps, water ring pumps, reciprocating pumps, etc. can be used, allowing a wide range of choices.
以下、本発明の処理方式を採用することにより得られる
効果について述べる。The effects obtained by adopting the processing method of the present invention will be described below.
プラズマ型排ガス処理装置がプロセスチャンバーとプロ
セスの排気設備の間コこ設置されている時は、プロセス
の制約を受けやすく、排ガス処理の条件が、プロセスの
制約で決まってじまい、プラズマ型排ガス処理装置の性
能を充分に発揮できないような条件で処理を行わねばな
らないという事態も発生する。When a plasma-type exhaust gas treatment device is installed somewhere between a process chamber and process exhaust equipment, it is likely to be subject to process constraints, and the conditions for exhaust gas treatment are determined by the process constraints. Situations may also occur in which processing must be performed under conditions that do not allow the performance of the device to be fully demonstrated.
これに対し、本発明のごとく、プロセスの排気設備の排
気側にプラズマ型排ガス処理装置を設置し、さらに専用
の排気設備を設Ｗするという処理方式をとることにより
、プロセスに影響を与えないばかりか、プロセスの制約
を全く受けることなく、プラズマ型排ガス処理装置の性
能を充分に発現させることができるのである。すなわち
、プラズマ型排ガス処理装置は、Ｉ ｍＴｏｒｒ −Ｉ
Ｔｏｒｒの圧力範囲で、さらには磁界の併用により０
．０１ ｍＴｏｒｒ〜１００． Ｔｏｒｒの圧力範囲で
動作が可能であるが、動作圧力には最適値が必ず存在し
、最適圧力での動作時の未分解排ガス量は、動作可能圧
力範囲の上限あるいは下限での動作時の未分解ガス量の
１０分の１かみ１００分の１にまで分解処理し得るので
ある。この事実を考えれば、プラズマ型排ガス処理装置
をプロセスの排気設備の排気側に設置し、専用の排気設
備を設けることにより最適処理条件で動作させうる利点
は大きいと言える。In contrast, by adopting a treatment method as in the present invention, in which a plasma-type exhaust gas treatment device is installed on the exhaust side of the process exhaust equipment, and a dedicated exhaust equipment is also installed, the process is not affected. In other words, the performance of the plasma-type exhaust gas treatment device can be fully expressed without being subject to any process restrictions. That is, the plasma type exhaust gas treatment device has I mTorr −I
In the pressure range of Torr, and even with the combined use of a magnetic field, 0
．． 01 mTorr~100. Although operation is possible in the pressure range of Torr, there is always an optimum value for the operating pressure, and the amount of undecomposed exhaust gas when operating at the optimum pressure is the same as the amount of undecomposed exhaust gas when operating at the upper or lower limit of the operating pressure range. The amount of decomposition gas can be reduced to 1/10 to 1/100 of the amount of decomposed gas. Considering this fact, it can be said that there is a great advantage that the plasma type exhaust gas treatment device can be operated under optimal processing conditions by installing it on the exhaust side of the process exhaust equipment and providing a dedicated exhaust equipment.
さらには、排ガスの種類によっては、０２、Ｎ２、Ｈ２
などの反応性ガスをプラズマ型排ガス処理装置に別に供
給し、これらのプラズマを併用することにより、排ガス
の分解効率が大幅に向上する場合がある。また、排ガス
の流量変動が大きい場合にも、別にＡｒ 、Ｈｅ 、Ｎ
ｅなどの不活性ガスを供給し、これらのプラズマを排ガ
スの分解処理に用いることにより、安定放電を維持する
ことも可能となる。Furthermore, depending on the type of exhaust gas, 02, N2, H2
The decomposition efficiency of exhaust gas may be greatly improved by separately supplying reactive gases such as oxidants to the plasma-type exhaust gas treatment device and using these plasmas together. In addition, when the flow rate fluctuation of exhaust gas is large, Ar, He, N
It is also possible to maintain stable discharge by supplying an inert gas such as e and using these plasmas for decomposition treatment of exhaust gas.
このような併用ガスを供給するという考え方は、プラズ
マ型排ガス処理装置をプロセスの排気設備の排気側に設
置するということで、初めて可能になったことであり、
プロセスの間にプラズマ型排ガス処理装置を設置してい
る限りにおいては、プロセスに与える影響が大き過ぎ、
とても実施できるものではない。The concept of supplying such combined gases was made possible for the first time by installing a plasma-type exhaust gas treatment device on the exhaust side of the process exhaust equipment.
As long as plasma-type exhaust gas treatment equipment is installed during the process, the impact on the process is too large.
It's not something that can be implemented very easily.
また既存のプロセスにプラズマ型排ガス処理装置を取付
ける場合にも、本発明の方式では既設のラインを変更す
る必要は全くなく、設置場所も自由に遍ふことができる
。これに対し、プロセスの間にプラズマ型排ガス処理装
置を取付ける場合には、ライン変更が必要であり、また
設置スペースも問題となり、実用上、はなはだ問題であ
る。このように、本発明の処理方式は既存のプロセスへ
の取付けが容５という波及効果も持っている。Furthermore, even when a plasma-type exhaust gas treatment device is installed in an existing process, the method of the present invention does not require any changes to the existing line, and the installation location can be changed freely. On the other hand, when installing a plasma-type exhaust gas treatment device during the process, line changes are required and installation space becomes a problem, which is a serious problem in practice. In this way, the processing method of the present invention also has the ripple effect of being easy to install into existing processes.
以下、本発明の実施の態様の具体例を実施例により説明
する。Hereinafter, specific examples of embodiments of the present invention will be explained by way of examples.
実施例１
１００％のシランガス５０３ＣＣＭを導入するアモルフ
ァスシリコン膜製造装置の排ガスの排気設備の排気側に
プラズマ型排ガス処理装置（容積５Ｎ）、メカニカルブ
ースターポンプ及びロータリーポンプを設置し、圧力を
０．２ Ｔｏｒｒに制′４Ｂ′−ながら、交流電圧２０
０Ｖを印加することにより７ランガスの処理を行った。Example 1 A plasma-type exhaust gas treatment device (volume 5N), a mechanical booster pump, and a rotary pump were installed on the exhaust side of the exhaust gas exhaust equipment of an amorphous silicon film production device into which 503 CCM of 100% silane gas was introduced, and the pressure was reduced to 0.2 AC voltage 20V while controlling to Torr '4B'-
Seven run gas treatments were performed by applying 0V.
この時、排ガス処理装置の排出ガス中Ｓこ含まれるシラ
ン濃度を四重！！ｉ！質量分析装置で測定したところ、
プラズマ放電を起こして、シランガスの分解処理を行っ
ている時のシラン排出量は交流電圧を切って、分解処理
を行わない時の０．５％であった。At this time, the concentration of silane contained in S in the exhaust gas from the exhaust gas treatment equipment is increased! ! i! When measured with a mass spectrometer,
The amount of silane discharged when plasma discharge was generated to decompose silane gas was 0.5% when the AC voltage was turned off and no decomposition process was performed.
また、アモルファスシリコン膜の製造には、全く影響を
及ぼすことはなかった。Furthermore, there was no effect on the production of amorphous silicon films.
実施例２
実施例１と同一のシステムで、プラズマ型排ガス処理装
置番こ０□ガス２０ＳＣＣＭを導入しながら、実施例１
と同様に、圧力を０．２ Ｔｏｒｒに制御しながら、交
流電圧２００ｖを印加することによりシランガスの処理
を行った。Example 2 Using the same system as Example 1, Example 1 was carried out while introducing plasma-type exhaust gas treatment equipment number 0□ gas 20SCCM.
Similarly, silane gas was treated by applying an AC voltage of 200 V while controlling the pressure to 0.2 Torr.
プラズマ放電を起こして、シランガスの分解処理を行っ
ている時のシラン排出量は分解処理を行わない時の０，
１％であった。The amount of silane emitted when plasma discharge is generated to decompose silane gas is 0 when no decomposition treatment is performed.
It was 1%.
また、アモルファスシリコン膜の製造には、全く影響を
及ぼすことはなかった。Furthermore, there was no effect on the production of amorphous silicon films.
二発明の効果〕
実施例１より、プラズマ型排ガス処理装置二二より高濃
度 大流量の排ガスが効率よく分解されていることがわ
かる。また実施例２においては０２ガスの導入が分解率
の向上に効果的に寄与していることがわかる。2. Effects of the Invention] From Example 1, it can be seen that exhaust gas of high concentration and large flow rate is efficiently decomposed by the plasma type exhaust gas treatment device 22. Furthermore, it can be seen that in Example 2, the introduction of 02 gas effectively contributed to improving the decomposition rate.
第１図は、本発明におけるプラズマ型排ガス処理装置及
び専用の排気設備の設置位置を示した説明図である。図
において、
１・・・・プロセスナャンハー
２・・・・プロセス排ガスの排気設備
３・・・・プラズマ型排ガス処理装置
４・・・・排ガス処理設備の排気設備
を示す。
特許出願人 三井東圧化学株式会社FIG. 1 is an explanatory diagram showing the installation positions of the plasma type exhaust gas treatment device and dedicated exhaust equipment in the present invention. In the figure, 1...Process Nayanhar 2...Exhaust equipment for process exhaust gas 3...Plasma type exhaust gas treatment device 4...Exhaust equipment for exhaust gas treatment equipment is shown. Patent applicant Mitsui Toatsu Chemical Co., Ltd.
Claims (1)
ズマ型排ガス処理装置を設置し、さらにその後に専用の
排気設備を設置することを特徴とする排ガス処理方式。1) An exhaust gas treatment method characterized by installing a plasma-type exhaust gas treatment device on the exhaust side of the exhaust equipment of the semiconductor manufacturing process, and then installing dedicated exhaust gas treatment equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2330014A JPH04200617A (en) | 1990-11-30 | 1990-11-30 | Exhaust gas treating system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2330014A JPH04200617A (en) | 1990-11-30 | 1990-11-30 | Exhaust gas treating system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04200617A true JPH04200617A (en) | 1992-07-21 |
Family
ID=18227808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2330014A Pending JPH04200617A (en) | 1990-11-30 | 1990-11-30 | Exhaust gas treating system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04200617A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005072852A1 (en) * | 2004-01-29 | 2005-08-11 | Taiyo Nippon Sanso Corporation | Method and apparatus for treating exhaust gas |
| JP2018069112A (en) * | 2016-10-24 | 2018-05-10 | カンケンテクノ株式会社 | Exhaust gas decompression detoxification method and device for the same |
-
1990
- 1990-11-30 JP JP2330014A patent/JPH04200617A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005072852A1 (en) * | 2004-01-29 | 2005-08-11 | Taiyo Nippon Sanso Corporation | Method and apparatus for treating exhaust gas |
| JPWO2005072852A1 (en) * | 2004-01-29 | 2007-07-26 | 大陽日酸株式会社 | Exhaust gas treatment method and exhaust gas treatment device |
| KR100836094B1 (en) * | 2004-01-29 | 2008-06-09 | 다다히로 오미 | Method and apparatus for treating exhaust gas |
| JP4895612B2 (en) * | 2004-01-29 | 2012-03-14 | 大陽日酸株式会社 | Exhaust gas treatment method and exhaust gas treatment apparatus |
| JP2018069112A (en) * | 2016-10-24 | 2018-05-10 | カンケンテクノ株式会社 | Exhaust gas decompression detoxification method and device for the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6174499B1 (en) | Method and apparatus for treatment of freon gas | |
| US5454903A (en) | Plasma cleaning of a CVD or etch reactor using helium for plasma stabilization | |
| US6863019B2 (en) | Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas | |
| TW201833365A (en) | Method of subatmospheric plasma-enhanced ald using capacitively coupled electrodes with narrow gap | |
| US20040139983A1 (en) | Cleaning of CVD chambers using remote source with CXFYOZ based chemistry | |
| WO2007048995A1 (en) | Method of treating gas | |
| JPH04264715A (en) | Vertical batch treatment device | |
| JP2018502451A (en) | Plasma mitigation using water vapor with hydrogen or hydrogen-containing gas | |
| TWI400354B (en) | Method of treating a gas stream | |
| JP7321085B2 (en) | Membrane forming method and system | |
| JPH04200617A (en) | Exhaust gas treating system | |
| KR102185192B1 (en) | Plasma etching method | |
| KR20130105308A (en) | Deposition chamber cleaning using in situ activation of molecular fluorine | |
| KR101721931B1 (en) | Device for atomic layer deposition and method of atomic layer deposition | |
| JP2020057682A (en) | Gas generation method and etching apparatus | |
| JP2004146837A (en) | Plasma processing method and plasma processing apparatus | |
| TWI824413B (en) | Plasma manufacturing system and method for reducing ozone concentration when manufacturing atmospheric plasma | |
| JPH04265113A (en) | Treatment of fluorine-containing gas | |
| JP2006326553A (en) | Apparatus for treating exhaust gas | |
| JPH0992643A (en) | Plasma treating device and method | |
| WO2021117534A1 (en) | Substrate processing method and substrate processing apparatus | |
| JPH06314675A (en) | Cleaning method of semiconductor manufacturing apparatus and manufacture of semiconductor device | |
| JPH05160085A (en) | Manufacture of semiconductor device | |
| KR20220141644A (en) | Semiconductor Fabricating Apparatus and Method of Operating The Same | |
| JPH04253330A (en) | Dry cleaning method for wafer treating device |