JPH0418977A - Apparatus for removing dissolved gas - Google Patents
Apparatus for removing dissolved gasInfo
- Publication number
- JPH0418977A JPH0418977A JP12246990A JP12246990A JPH0418977A JP H0418977 A JPH0418977 A JP H0418977A JP 12246990 A JP12246990 A JP 12246990A JP 12246990 A JP12246990 A JP 12246990A JP H0418977 A JPH0418977 A JP H0418977A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- phase
- liq
- dissolved
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- 239000011261 inert gas Substances 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 5
- 230000005587 bubbling Effects 0.000 abstract description 5
- 239000012071 phase Substances 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 150000002926 oxygen Chemical class 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
- 239000008235 industrial water Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Landscapes
- Degasification And Air Bubble Elimination (AREA)
- Physical Water Treatments (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明に、半導体製造プロセス中で用いられる水の溶
存気体の除去？行うことの出来る溶存気体除去装置に関
するものである。[Detailed Description of the Invention] [Industrial Application Field] Does this invention apply to the removal of dissolved gases in water used in semiconductor manufacturing processes? The present invention relates to a dissolved gas removal device that can remove dissolved gases.
第８図に、半導体製造プロセスに用いられる純水を供給
する場合の従来の叫水供給システム？示すシステム図で
あり。：ｌｌＶ′ｉ未処理の工業用水、（７）は水中の
溶存酸素全除去する為の真空脱気装置１，５）は呼水便
用設備である。ｂ・、１８）は工業用水中の雌の不純物
を除去する前処理、後処理装置である。Figure 8 shows a conventional water supply system for supplying pure water used in semiconductor manufacturing processes. FIG. :llV'i untreated industrial water, (7) is a vacuum deaerator for removing all dissolved oxygen in the water 1, 5) is a priming facility. b., 18) is a pre-treatment and post-treatment device for removing female impurities from industrial water.
このようＶＣ構成きれた純水供給システムにおいて工業
用水（１１が＠処理装置６）を経て真空脱気装置１７）
で真空脱気さｎ住処理装置（８］を経て、純水使用箇所
６１に供給される。In a pure water supply system with such a VC configuration, industrial water (11 is supplied to the vacuum deaerator 17) via the treatment device 6).
The purified water is then vacuum degassed, passed through a water treatment device (8), and then supplied to a point 61 where pure water is used.
従来の純水供給システムは以上のよう溶存酸素の除去を
真空脱気と−う方法で竹っていたため、真空脱気装置だ
けで多額のコストが〃・かりさらに装置を作動する九め
のポンプの消費電力が高く、又１時間にｌＯ〜１００ｔ
の純水を処理するだけの大きい装置である為にスペース
効率が悪いという問題点があった。Conventional pure water supply systems remove dissolved oxygen using vacuum deaeration as described above, which requires a large amount of cost for the vacuum deaeration equipment alone and a ninth pump to operate the equipment. The power consumption is high, and the power consumption is 10~100t per hour.
Since the equipment is large enough to process pure water, it has the problem of poor space efficiency.
この発明に上記のような問題Ｑを解決するためになされ
たもので、安価にスペース効率よ〈溶存気体の除去を行
うことを目的とするものである。This invention was made in order to solve the above-mentioned problem Q, and its purpose is to remove dissolved gas at low cost and with space efficiency.
この発明ζ、容器の底部に半導体ウニ／・表面と反応不
活性な気体が導入されると共に容器底部から噴出される
気体Ｊ［吊手段と？設は之ものである。In this invention ζ, an inert gas that reacts with the surface of the semiconductor sea urchin is introduced into the bottom of the container, and at the same time a gas J [hanging means?] is ejected from the bottom of the container. The setting is as follows.
この発明ｌてよれｄ、！水中の溶存気体をウェハ表面と
反応不活性な気体により置換することが出来る。This invention is so scary! Dissolved gas in water can be replaced with an inert gas that reacts with the wafer surface.
第１図は、この発明の一実施例のガスノくプリング装置
を含む純水供給システムを示すシステム区であり、１旧
６１は従来例にふ・ける７ステム構成と同等のものであ
る。図において＋２１４１は工業用水中の他の不純物を
除去する処理装置、＋３１ ｄガスバブリング装置であ
る。FIG. 1 shows a system section showing a pure water supply system including a gas nozzle pulling device according to an embodiment of the present invention, and 1 old 61 is equivalent to the 7-stem configuration in the conventional example. In the figure, +2141 is a treatment device that removes other impurities from industrial water, and +31d is a gas bubbling device.
第１！図に、前記ガスバブリング装置の祥細を示す評細
断面図でろり、（２ａ）ｉｑ水イ、（２ｂ〕はウェハ表
面と反応不活性な気体としτＡｒ ’ｃ便用し、そのガ
スボンベを示り、 （ｊＩＣ）ｉバブラー（２ｄ）に孜
相、（２ｅ）に気相を下している〇このようＶＣ構成さ
れたバブリング肢＠に２・いてＡｒ ガスボンベ（２ｂ
）よりＡｒ ガスをバブラー（ｇｃ）を用いてバグリン
グし、−ｆＬ Ａｒ ガスが液相（２ｄ）にとけこみ、
過−ＪのＡｒ ガスが液面上を覆う。1st! The figure is a detailed cross-sectional view showing the details of the gas bubbling device, (2a) iq water, (2b) is an inert gas that reacts with the wafer surface, and the gas cylinder is shown. (jIC) The i-bubbler (2d) is injected with a gas phase, and the bubbling limb (2e) with an Ar gas cylinder (2b)
), Ar gas is bubbled using a bubbler (gc), and -fL Ar gas is dissolved into the liquid phase (2d),
Over-J Ar gas covers the liquid surface.
ヘンリーの法則によると一足温度で気体の浴解度はその
分圧に比例し、気相（２ｅ）に、Ａｒ雰囲気となってい
るので、液相（２ｄ）のＶ？素がＡｒと置換される。According to Henry's law, the bath solubility of a gas at a certain temperature is proportional to its partial pressure, and since there is an Ar atmosphere in the gas phase (2e), V? of the liquid phase (2d)? element is replaced with Ar.
第４図汀溶存酸素の一度と自然酸化膜のＦｉＡ係をグラ
フにしたものであるが、溶存酸Ｘ濃度が低濃度（ｏ、ｏ
＋ｐｐｍ）の時が最も自然酸化膜かうすいことを示して
いる。促って、Ａｒ 置換で酸素が除去され０ことに
Ｌり自然酸化膜の発生を防ぐことが出来る。（第４図：
ウルトラテクノロジー１９８９．４月ｇ５日発行ｖｏｘ
ｉより引用）なお％前記実ｙ５．例ではＡｒガスを使
用した例を示したが半導体ウェハ表面と反応不活性であ
る気体であればどの様な気体でも同様の効果を示し、父
、水中の府存酸素のみならず、池のどの様な気体も除去
することかカ米る。Figure 4 is a graph of the relationship between the concentration of dissolved oxygen on the shore and the FiA of the natural oxide film.
+ppm) indicates that the natural oxide film is the thinnest. As a result, oxygen is removed by Ar substitution, and the formation of a natural oxide film can be prevented. (Figure 4:
Ultra Technology 1989. April g5 issue vox
(quoted from i) Note that the above actual y5. In this example, Ar gas was used, but any gas that reacts with the surface of a semiconductor wafer and is inert will have the same effect. It is also possible to remove various gases.
以上のようにこの発明によれば、容器の底部に半導体ウ
ェハ表面と反応不活性な気体が導入されると共に容器底
部から噴出される気体噴出手段を設けたので、安価でス
ペース効率よく溶存気体の除去を行うことが出来るとい
う効果がある。As described above, according to the present invention, an inert gas that reacts with the semiconductor wafer surface is introduced into the bottom of the container, and a gas ejection means is provided to eject the gas from the bottom of the container. This has the effect of being able to be removed.
４、 図面の１１１１車な説明
第１図μこの発明の一実施Ｐｉ ｋ示す純水供給システ
ム図、第３図はこの発明の一実施例の純水供給システム
中で用いたガスバブリング装置図、第３図は従来の純水
供給システム図、第４図は純水中の溶存＃素ａ度と自然
酸化膜厚との関係を示すグラフである〇
各図中、同一符号にｊ四−または相当部分を示す。4. Explanation of the 1111 vehicle in the drawings. Figure 1 is a diagram of a pure water supply system showing one embodiment of this invention. Figure 3 is a diagram of a gas bubbling device used in the pure water supply system of one embodiment of this invention. Figure 3 is a diagram of a conventional pure water supply system, and Figure 4 is a graph showing the relationship between dissolved #a degree in pure water and natural oxide film thickness. A considerable portion is shown.
Claims (1)
に、前記水が注入される注入口と、前記容器の底部に半
導体ウェハ表面と反応不活性な気体が導入されると共に
、前記容器底部から噴出される気体噴出手段と、前記容
器本体に設けられた水放出口とを備えた、溶存気体除去
装置。a container body in which water to be treated is stored; an inlet into which the water is injected into the container body; an inert gas that reacts with the semiconductor wafer surface is introduced into the bottom of the container; A dissolved gas removal device comprising: a gas ejection means ejected from the bottom; and a water discharge port provided in the container body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12246990A JPH0418977A (en) | 1990-05-11 | 1990-05-11 | Apparatus for removing dissolved gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12246990A JPH0418977A (en) | 1990-05-11 | 1990-05-11 | Apparatus for removing dissolved gas |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0418977A true JPH0418977A (en) | 1992-01-23 |
Family
ID=14836620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12246990A Pending JPH0418977A (en) | 1990-05-11 | 1990-05-11 | Apparatus for removing dissolved gas |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0418977A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993001133A1 (en) * | 1991-07-02 | 1993-01-21 | Tadahiro Ohmi | System for supplying pure water and cleaning method therefor |
-
1990
- 1990-05-11 JP JP12246990A patent/JPH0418977A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993001133A1 (en) * | 1991-07-02 | 1993-01-21 | Tadahiro Ohmi | System for supplying pure water and cleaning method therefor |
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