JPH04185639A - Formation of insulating film and semiconductor device - Google Patents
Formation of insulating film and semiconductor deviceInfo
- Publication number
- JPH04185639A JPH04185639A JP2314570A JP31457090A JPH04185639A JP H04185639 A JPH04185639 A JP H04185639A JP 2314570 A JP2314570 A JP 2314570A JP 31457090 A JP31457090 A JP 31457090A JP H04185639 A JPH04185639 A JP H04185639A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- film
- semiconductor device
- layer
- protective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 230000015572 biosynthetic process Effects 0.000 title description 7
- 230000001681 protective effect Effects 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 125000000962 organic group Chemical group 0.000 claims abstract description 7
- 229920000642 polymer Polymers 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 5
- 239000001301 oxygen Substances 0.000 abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 abstract description 5
- 229920002050 silicone resin Polymers 0.000 abstract description 5
- 238000009413 insulation Methods 0.000 abstract description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 17
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 15
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 229920000620 organic polymer Polymers 0.000 description 5
- 239000002861 polymer material Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 125000005375 organosiloxane group Chemical group 0.000 description 2
- 238000006068 polycondensation reaction Methods 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- YZVRVDPMGYFCGL-UHFFFAOYSA-N triacetyloxysilyl acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)OC(C)=O YZVRVDPMGYFCGL-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000005809 transesterification reaction Methods 0.000 description 1
- AJSTXXYNEIHPMD-UHFFFAOYSA-N triethyl borate Chemical compound CCOB(OCC)OCC AJSTXXYNEIHPMD-UHFFFAOYSA-N 0.000 description 1
- WVLBCYQITXONBZ-UHFFFAOYSA-N trimethyl phosphate Chemical compound COP(=O)(OC)OC WVLBCYQITXONBZ-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Paints Or Removers (AREA)
- Silicon Polymers (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
半導体集積回路の多層配線を構成する層間絶縁膜に関し
、
酸素プラズマ耐性に優れ、また基板表面の平坦化性が優
れた層間絶縁膜を実用化することを目的とし、
下記の一般式で表される硅素重合体を有機基を有する層
間絶縁膜の上層保護膜として使用し、半導体基板上の表
面段差を平坦化することを特徴として半導体装置を構成
する。[Detailed Description of the Invention] [Summary] The purpose of the present invention is to commercialize an interlayer insulating film that has excellent resistance to oxygen plasma and flattening of the substrate surface, regarding an interlayer insulating film constituting multilayer wiring of a semiconductor integrated circuit. A semiconductor device is constructed in which a silicon polymer represented by the following general formula is used as an upper protective film of an interlayer insulating film having an organic group, and surface steps on a semiconductor substrate are flattened.
（Ｓｉ０４７ｔ） ＋ （ＰＯａ、２） 、 （ＢＯｓ
／２）ゎ ・・・（１）こ＼で、
１ ： ｍ ： ｎ 〜７０〜１００ ： １５〜Ｏ
： １５〜０〔産業上の利用分野〕
本発明は半導体集積回路の多層化に使用する層間絶縁膜
の形成方法と、これを用いた半導体装置に関する。(Si047t) + (POa, 2), (BOs
/2) ゎ ... (1) Here, 1: m: n ~70~100: 15~O
: 15-0 [Industrial Application Field] The present invention relates to a method for forming an interlayer insulating film used for multilayering a semiconductor integrated circuit, and a semiconductor device using the same.
本発明に係る層間絶縁膜はＬＳＩやＶＬＳＩなど集積度
の高い半導体装置を形成する際に多層化に伴う段差の平
坦化性が優れており、また耐酸素プラズマ性に優れてい
る。The interlayer insulating film according to the present invention has excellent ability to flatten steps caused by multilayering when forming highly integrated semiconductor devices such as LSI and VLSI, and also has excellent oxygen plasma resistance.
そのため、この絶縁膜の使用により信頼性の高い半導体
装置を実現することができる。Therefore, by using this insulating film, a highly reliable semiconductor device can be realized.
半導体装置は集積度が向上してＬＳＩやＶＬＳＩが実用
化されているが、これは単位素子の小形化により実現さ
れており、そのため配線の最小線幅がサブミクロン（Ｓ
ｕｂ−ｍｉｃｒｏｎ ）のパターンが用いられている。The degree of integration of semiconductor devices has improved and LSI and VLSI have been put into practical use, but this has been achieved by miniaturizing unit elements, and as a result, the minimum line width of wiring has become submicron (S).
ub-micron) pattern is used.
一方、配線の微細化による電気容量の減少を防ぐために
配線パターンの厚さは６０００人〜１μｍと高（する必
要があり、そのため段差は益々大きくなる傾向にある。On the other hand, in order to prevent a decrease in capacitance due to miniaturization of wiring, the thickness of wiring patterns must be as high as 6,000 to 1 μm, and therefore, the steps tend to become larger and larger.
このため、多層配線を形成する上で、優れた平坦性が得
られる層間絶縁膜が必要になっている。For this reason, there is a need for an interlayer insulating film that can provide excellent flatness when forming multilayer wiring.
また、情報処理の高速化により信号の周波数はＧＨｚに
まで及んでいるが、このように高速な信号を処理する半
導体装置の絶縁膜は、信号の伝播遅延時間（τ）を低減
するため、関係式（２）から明らかなように誘電率の小
さな材料を用いて形成する必要がある。In addition, as information processing speeds up, signal frequencies have reached GHz, and the insulating films of semiconductor devices that process such high-speed signals are required to reduce the signal propagation delay time (τ). As is clear from equation (2), it is necessary to use a material with a small dielectric constant.
τ；εＩ／２／ｃ ・・・（２）ニーで
、
εは絶縁膜の誘電率、
Ｃは光の速度、
である。τ; εI/2/c (2) where ε is the dielectric constant of the insulating film, and C is the speed of light.
従来、眉間絶縁膜の材料としては無機絶縁材料や有機高
分子材料が使用されてきた。Conventionally, inorganic insulating materials and organic polymer materials have been used as materials for the glabellar insulating film.
すなわち、二酸化硅素（ＳｉＯｚ） 、窒化硅素（Ｓｉ
ｓＮ４）、燐硅酸ガラス（略称ＰＳＧ ）などの無機材
料は気相成長法（略称ＣＶＤ法）などを用いて形成され
ているが、ＣＶＤ法による場合は、下地と相似形に形成
されるために、基板面の凹凸がそのま＼再現され、この
上に形成される配線の断線や絶縁不良の原因となる。That is, silicon dioxide (SiOz), silicon nitride (Si
Inorganic materials such as sN4) and phosphosilicate glass (abbreviated as PSG) are formed using a vapor phase growth method (abbreviated as CVD method), but when using the CVD method, they are formed in a similar shape to the base. Moreover, the irregularities on the substrate surface are reproduced as they are, causing disconnection and poor insulation of the wiring formed thereon.
また、無機材料は一般に誘電率が大きいと云う問題があ
る。Another problem is that inorganic materials generally have a large dielectric constant.
また、ポリイミド、オルガノシロキサン樹脂などの有機
高分子材料はスピンコード法などにより形成されており
、基板面の平坦化には有効であるが、多層配線工程にお
ける酸素（０□）プラズマ処理によって有機基が酸化さ
れ、クラックを生じると云う問題がある。In addition, organic polymer materials such as polyimide and organosiloxane resins are formed by spin coding, etc., and are effective for flattening the substrate surface, but organic polymer materials such as polyimide and organosiloxane resins are There is a problem in that it is oxidized and cracks occur.
このため、有機高分子材料を使用する場合は、この上に
０２プラスマ処理によって化学変化を生じない無機膜を
形成する必要がある。Therefore, when an organic polymer material is used, it is necessary to form an inorganic film thereon that does not undergo chemical changes by 02 plasma treatment.
そこで、ＣＶＤ法により上層保護膜が作られ、膜のスト
レスの問題から酸化膜が用いられているか、良好な膜質
を得るためには反応を高温で行う必要があり、この際に
高分子膜の酸化あるいは分解の進行によりガスが発生す
ると云う問題や酸化によりクラックが発生すると云う問
題がある。Therefore, the upper protective film is made by the CVD method, and an oxide film is used due to the problem of stress on the film.In order to obtain good film quality, it is necessary to carry out the reaction at high temperature, and at this time, the polymer film is There is a problem that gas is generated due to the progress of oxidation or decomposition, and a problem that cracks are generated due to oxidation.
例えば、ポリイミド系の樹脂は酸素プラズマによる酸化
があり、また４００℃程度の温度で熱分解が起こる。For example, polyimide resins are oxidized by oxygen plasma and thermally decomposed at temperatures of about 400°C.
また、塗布・乾燥の終わった高分子膜は平坦であるが、
加熱硬化時に膜厚が減少するために下層の配線段差を完
全に平坦化することはできず、その上にＣＶＤ法により
上層保護膜を形成しても段差の平坦化は困難であった。In addition, the polymer film is flat after coating and drying, but
Since the film thickness decreases during heat curing, it is not possible to completely flatten the lower wiring level difference, and even if an upper layer protective film is formed thereon by CVD, it is difficult to flatten the level difference.
以上記したように、半導体集積回路の形成に使用する層
間絶縁層は、平坦化性が優れていること＼、酸素プラズ
マ耐性に優れていることが必要である。As described above, the interlayer insulating layer used for forming a semiconductor integrated circuit needs to have excellent planarization properties and oxygen plasma resistance.
そこで、有機高分子材料をスピンコードして平坦な絶縁
膜を形成した後、ＣＶＤ法により無機膜を形成して上層
保護膜とすることが行われている。Therefore, after a flat insulating film is formed by spin-coding an organic polymer material, an inorganic film is formed by a CVD method to form an upper protective film.
然し、この方法では平坦性が充分ではなく、上層保護膜
の形成にあたって絶縁膜よりガスが発生したり、分解が
生じたりすることが問題で、この解決が課題である。However, this method does not provide sufficient flatness, and there are problems in that gas is generated or decomposition occurs from the insulating film during the formation of the upper protective film, and it is a problem to solve this problem.
上記の課題は下記の一般式で表される硅素重合体を有機
基を有する層間絶縁膜の上層保護膜として使用し、半導
体基板上の表面段差を平坦化することを特徴として半導
体装置を構成することにより解決することができる。To solve the above problem, a semiconductor device is constructed by using a silicon polymer represented by the following general formula as an upper protective film of an interlayer insulating film having an organic group, and flattening the surface level difference on a semiconductor substrate. This can be solved by
（Ｓｉ（Ｌｉ２） ＋ （ＰＯｓｚｚ） ｗ、 （ＢＯ
３／２）。 ・・・（１）ニーで、
ｌ；ｍ；ｎ＝７０〜ｌＯＯ：１５〜０：１５〜０〔作用
〕
本発明は平坦性が優れ、また耐０２プラズマ耐性の優れ
た層間絶縁層を得る方法として、上層保護膜に硅素重合
体を用いるものである。(Si(Li2) + (POszz) w, (BO
3/2). ...(1) At the knee, l;m;n=70~lOO:15~0:15~0 [Function] The present invention provides an interlayer insulating layer with excellent flatness and excellent 02 plasma resistance. As a method, a silicon polymer is used for the upper protective film.
ニーで、一般式（１）で表される硅素重合体は０２プラ
ズマ等の活性化学種による化学変化を受けても劣化して
クラックを発生することはない。The silicon polymer represented by the general formula (1) does not deteriorate and generate cracks even when subjected to chemical changes caused by active chemical species such as 02 plasma.
また、下層を保護するのに充分な６０００Å以上の膜厚
で使用することができる。Further, it can be used with a film thickness of 6000 Å or more, which is sufficient to protect the underlying layer.
そのため、多層配線形成工程において、有機基をもつ絶
縁膜の破損を完全に防ぐことができる。Therefore, damage to the insulating film having organic groups can be completely prevented in the multilayer wiring formation process.
また、この材料はスピンコード法によって成膜できるた
め、ＣＶＤ法のように高温を必要とせず、また大掛かり
な装置を必要としない。Further, since this material can be formed into a film by the spin code method, it does not require high temperatures unlike the CVD method, and does not require large-scale equipment.
また、スピンコード法により下層絶縁層の平坦化ができ
るので、更に高い平坦性を得ることができる。Further, since the lower insulating layer can be flattened by the spin code method, even higher flatness can be obtained.
合成例１：
１１のフラスコ中で、テトラアセトキシシラン１３２
ｇをテトラヒドロフラン（略称ＴＨＦ）５００ ｍｆ
に溶解し、これにトリエチル硼酸７３ｇを加え、３時間
に亙って加熱還流した後、溶媒のＴＨＦを留去してエス
テル交換反応生成物を得た。Synthesis Example 1: In 11 flasks, 132 tetraacetoxysilane
g to tetrahydrofuran (abbreviation THF) 500 mf
73 g of triethyl boric acid was added thereto, and after heating under reflux for 3 hours, the solvent THF was distilled off to obtain a transesterification reaction product.
これにメタノール３０ｍ１を加え、３０分間に亙って室
温で攪拌した後、イオン交換水２０ｍｆを滴下し、５０
℃で３時間加熱して加水分解させると共に重縮合させた
。After adding 30 ml of methanol to this and stirring at room temperature for 30 minutes, 20 mf of ion-exchanged water was added dropwise, and 50 ml of methanol was added.
The mixture was heated at ℃ for 3 hours to cause hydrolysis and polycondensation.
反応終了後、溶液中のメタノールと水とを除き、得られ
た平均分子量１．２ ＸＩＯ”の樹脂をブチルセルソル
ブに溶解して樹脂溶液を得た。After the reaction was completed, methanol and water in the solution were removed, and the resulting resin having an average molecular weight of 1.2 XIO'' was dissolved in butyl cellosolve to obtain a resin solution.
合成例２：
ＩＩ！のフラスコ中で、テトラアセトキシシラン１３２
ｇをＴＨＦ５００ ｒｎｌに溶解し、これにトリメチル
燐酸７０ｇを加え、塩化水素ガスを含むＮ２を溶液中に
導入しながら、３時間に亙って加熱還流した後、溶媒の
ＴＨＦを留去してエステル交換反応生成物を得た。Synthesis example 2: II! Tetraacetoxysilane 132 in a flask of
g was dissolved in 500 rnl of THF, 70 g of trimethyl phosphoric acid was added thereto, and while N2 containing hydrogen chloride gas was introduced into the solution, the mixture was heated under reflux for 3 hours, and then the THF as a solvent was distilled off to dissolve the ester. An exchange reaction product was obtained.
これにメタノール３０ ｍｊ７を加え、室温で３０分間
に亙って攪拌した。To this was added 30 mj7 of methanol, and the mixture was stirred at room temperature for 30 minutes.
これに更にイオン交換水２０ ｍｆを滴下し、５０℃で
３時間加熱して加水分解させると共に重縮合を行った。Further, 20 mf of ion-exchanged water was added dropwise to this, and the mixture was heated at 50° C. for 3 hours to cause hydrolysis and polycondensation.
反応終了後、得られた反応混合物から、減圧して溶液中
のメタノールと水とを除き、得られた平均分子量が１．
２ ＸＩＯ”の樹脂をブチルセルソルブに溶解して樹脂
溶液を得た。After the reaction is completed, methanol and water in the solution are removed from the resulting reaction mixture under reduced pressure, and the resulting average molecular weight is 1.
2XIO'' resin was dissolved in butyl cellosolve to obtain a resin solution.
実施例１：
第−層のＡｆ層配線施したＳｉ基板上にメチルシルセス
キオキサン樹脂を３００Ｏｒｐｍ、 ３０秒の条件でス
ピンコード法により塗布して厚さが０．８μｍの塗膜を
作り、２５０℃で３０分の熱処理を行った。Example 1: A coating film with a thickness of 0.8 μm was made by applying methylsilsesquioxane resin on a Si substrate with wiring of the -th layer Af layer by a spin code method under the conditions of 300 rpm and 30 seconds. Heat treatment was performed at 250°C for 30 minutes.
次に、合成例１で得た樹脂溶液を、メチルラダーシリコ
ーン樹脂層上にスピンコード法により塗布して厚さが０
．５μｍの塗膜を形成した。Next, the resin solution obtained in Synthesis Example 1 was applied onto the methyl ladder silicone resin layer by a spin cord method until the thickness was 0.
．． A coating film of 5 μm was formed.
この塗膜を１５０℃で３０分間乾燥して溶剤を除去した
後、２５０℃で３０分の熱処理を施した。After drying this coating film at 150°C for 30 minutes to remove the solvent, it was heat-treated at 250°C for 30 minutes.
この時、第−層配線により生じた段差は０．１μｍ以下
に平坦化されていた。At this time, the level difference caused by the -th layer wiring was flattened to 0.1 μm or less.
続いて、従来法のレジストを用いた工程によってスルー
ホールを形成したが、０２プラズマによるレジストの剥
離の際にも、メチルラダーシリコーン樹脂層には酸化に
よるクラックの発生は認められなかった。Subsequently, through-holes were formed by a conventional process using a resist, but no cracks due to oxidation were observed in the methyl ladder silicone resin layer even when the resist was peeled off using 02 plasma.
スルーホールを形成した後、このスルーホール部へのＡ
ｆの埋め込みと第二層目のＡＩ！配線を行い、保護層と
して１．３μｍのＰ２Ｏ層を形成した後、電極取り出し
用の窓開けを行って半導体装置を得た。After forming the through hole, connect A to this through hole part.
Embedding f and second layer AI! After wiring was performed and a 1.3 μm thick P2O layer was formed as a protective layer, a window for taking out the electrodes was opened to obtain a semiconductor device.
実施例２：
実施例１と同様にしてシリコーン樹脂層まで形成したＳ
ｉ基板上に、合成例２で調製した樹脂溶液をスピンコー
ド法により塗布し０．５μｍの塗膜を作り、２５０℃で
３０分の熱処理を施した。Example 2: S formed up to the silicone resin layer in the same manner as in Example 1
The resin solution prepared in Synthesis Example 2 was applied onto the i-substrate by a spin code method to form a 0.5 μm coating film, and heat treatment was performed at 250° C. for 30 minutes.
この時、第−層配線により生じた段差は０．１μｍ以下
に平坦化されていた。At this time, the level difference caused by the -th layer wiring was flattened to 0.1 μm or less.
続いて、従来法のレジストを用いた工程によってスルー
ホールを形成したが、０．プラズマによるレジストの剥
離の際にも、メチルラダーシリコーン樹脂層には酸化に
よるクラックの発生は認められなかった。Subsequently, through-holes were formed by a process using a conventional resist, but the results were 0. Even when the resist was removed by plasma, no cracks due to oxidation were observed in the methyl ladder silicone resin layer.
スルーホールを形成した後、このスルーホール部へのＡ
ｌ１の埋め込みと第二層目のｌ配線を行い、保護層とし
て１．３μｍのＰＳＧ層を形成した後、電極取り出し用
の窓開けを行って半導体装置を得た。After forming the through hole, connect A to this through hole part.
After embedding l1 and forming a second layer l wiring, and forming a 1.3 μm thick PSG layer as a protective layer, a window for taking out an electrode was opened to obtain a semiconductor device.
このように、硅素重合体を高分子樹脂よりなる絶縁膜の
上層保護膜として使用することにより、従来法により形
成した無機膜と同等の保護効果を得ることができ、また
高い平坦性も得られるために信頼性の高い半導体集積回
路を形成することができる。In this way, by using a silicon polymer as a protective film on top of an insulating film made of polymer resin, it is possible to obtain a protective effect equivalent to that of an inorganic film formed by conventional methods, and also to obtain high flatness. Therefore, a highly reliable semiconductor integrated circuit can be formed.
６壬6 壬
Claims (2)
れる硅素重合体からなる保護膜を形成することを特徴と
する絶縁膜の形成方法。 （ＳｉＯ＿４＿／＿２）＿ｌ（ＰＯ＿５＿＿／＿２）＿
ｍ（ＢＯ＿３＿／＿２）＿ｎ…（１）こゝで、 ｌ：ｍ：ｎ＝７０〜１００：１５〜０：１５〜０(1) A method for forming an insulating film, which comprises forming a protective film made of a silicon polymer represented by the following general formula on an insulating film having an organic group. (SiO_4_/_2)_l(PO_5_/_2)_
m(BO_3_/_2)_n...(1) Here, l:m:n=70~100:15~0:15~0
絶縁膜上に形成され表面が平坦化されてなる請求項１に
記載の保護膜とを有することを特徴とする半導体装置。(2) A semiconductor device comprising: an insulating film having an organic group that covers a wiring pattern; and a protective film according to claim 1, which is formed on the insulating film and whose surface is planarized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2314570A JPH04185639A (en) | 1990-11-20 | 1990-11-20 | Formation of insulating film and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2314570A JPH04185639A (en) | 1990-11-20 | 1990-11-20 | Formation of insulating film and semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04185639A true JPH04185639A (en) | 1992-07-02 |
Family
ID=18054873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2314570A Pending JPH04185639A (en) | 1990-11-20 | 1990-11-20 | Formation of insulating film and semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04185639A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009545649A (en) * | 2006-08-04 | 2009-12-24 | ダウ・コーニング・コーポレイション | Silicone resin and silicone composition |
-
1990
- 1990-11-20 JP JP2314570A patent/JPH04185639A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009545649A (en) * | 2006-08-04 | 2009-12-24 | ダウ・コーニング・コーポレイション | Silicone resin and silicone composition |
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