JPH04181788A - Semiconductor laser and manufacture thereof - Google Patents
Semiconductor laser and manufacture thereofInfo
- Publication number
- JPH04181788A JPH04181788A JP31060490A JP31060490A JPH04181788A JP H04181788 A JPH04181788 A JP H04181788A JP 31060490 A JP31060490 A JP 31060490A JP 31060490 A JP31060490 A JP 31060490A JP H04181788 A JPH04181788 A JP H04181788A
- Authority
- JP
- Japan
- Prior art keywords
- light
- layer
- semiconductor laser
- mqw
- quantum well
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 230000001678 irradiating effect Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims 1
- 238000000927 vapour-phase epitaxy Methods 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 7
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 description 7
- 238000005253 cladding Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000003313 weakening effect Effects 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は半導体レーザ及びその製造方法に関し、特に
、端面部の出力光の吸収が生じない窓構造付量子井戸レ
ーザ装置の構造及び製造方法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor laser and a manufacturing method thereof, and particularly relates to a structure and manufacturing method of a quantum well laser device with a window structure in which absorption of output light at the end face portion does not occur. It is something.
第２図は従来の窓構造付量子井戸レーザ装置を示す断面
図である。図において、ｌはｎ−ＧａＡＳ基板、２はｎ
−ＡｌＧａＡｓ上クラッド層、３はＭＱＷ （多重量子
井戸）活性層、４はｐ−ＡｌＧａＡｓ上クラッド層、５
はｐ−ＧａＡｓコンタクト層、６はＺｎ拡散領域、７は
ＭＱＷディスオーダ領域である。FIG. 2 is a sectional view showing a conventional quantum well laser device with a window structure. In the figure, l is an n-GaAS substrate, 2 is an n-GaAS substrate, and 2 is an n-GaAS substrate.
-AlGaAs upper cladding layer, 3 is MQW (multiple quantum well) active layer, 4 is p-AlGaAs upper cladding layer, 5
6 is a p-GaAs contact layer, 6 is a Zn diffusion region, and 7 is an MQW disorder region.
次に動作について説明する。ＭＱＷ活性層３で発生した
出力光は端面部より出射されるが、出力の大きい半導体
レーザでは端面部での出力光の吸収により端面部が劣化
するため、端面部の吸収率を低めた窓構造とする必要が
ある。Next, the operation will be explained. The output light generated in the MQW active layer 3 is emitted from the end face, but in semiconductor lasers with high output, the end face deteriorates due to the absorption of the output light at the end face, so a window structure is used to reduce the absorption rate of the end face. It is necessary to do so.
第２図の例では、端面部のＭＱＷ層にＺｎを拡散６する
ことにより、ＭＱＷのディスオーダ（無秩序化）領域７
を形成し、これをＭＱＷ活性層３よりもバンドギャップ
の広い非吸収領域として、窓構造型レーザを構成してい
た。In the example shown in FIG. 2, by diffusing Zn 6 into the MQW layer at the end face, a disordered region 7 of the MQW is created.
was formed, and this was used as a non-absorbing region with a wider band gap than the MQW active layer 3 to constitute a window structure type laser.
従来の窓構造付量子井戸レーザ装置は以上のように構成
されていたので、窓構造を形成するために拡散工程を行
う必要があった。このため、工程が複雑になり、また熱
処理により基板かダメージを受けるおそれかあった。Since the conventional quantum well laser device with a window structure was configured as described above, it was necessary to perform a diffusion process to form the window structure. This made the process complicated and there was a risk that the substrate would be damaged by the heat treatment.
この発明は上記のような問題点を解消するためになされ
たもので、第１の発明は、窓構造を備えた半導体レーザ
の新しい構造を得ることを目的としたものである。This invention has been made to solve the above-mentioned problems, and the first invention is aimed at obtaining a new structure of a semiconductor laser having a window structure.
さらに第２の発明は、該窓構造を結晶成長技術のみで作
製できる半導体レーザの製造方法を得ることを目的とし
たものである。A second object of the present invention is to provide a method for manufacturing a semiconductor laser in which the window structure can be manufactured using only crystal growth technology.
本発明に係る半導体レーザは、ＭＱＷで構成した活性層
の両端面部となる部分の量子井戸の厚さを中央部よりも
薄くしたものである。In the semiconductor laser according to the present invention, the thickness of the quantum well at the end face portions of the active layer made of MQW is thinner than at the central portion.
さらに本発明に係る半導体レーザの製造方法は、ＭＱＷ
層を形成する際にレーザＭＯＣＶＤ （有機金属気相成
長）法を用い、前記の端面部に相当する部分に照射する
レーザ光の強度を他の部分に照射するレーザ光の強度よ
りも周期的に弱くしてＭＱＷ活性層を成長する工程を含
むものである。Furthermore, the method for manufacturing a semiconductor laser according to the present invention includes an MQW
When forming the layer, a laser MOCVD (metal-organic chemical vapor deposition) method is used, and the intensity of the laser beam irradiated to the portion corresponding to the end face portion is set more periodically than the intensity of the laser beam irradiated to other portions. This includes a step of weakening and growing an MQW active layer.
この発明における半導体レーザは、端面部のＭＱＷ活性
層の量子井戸厚を薄くしたことにより、端面部では他の
部分のＭＱＷ層よりもバンドギャップが広がるため、出
力光を吸収しない窓構造か形成される。In the semiconductor laser according to the present invention, the quantum well thickness of the MQW active layer at the end face is made thinner, so that the band gap is wider at the end face than in other parts of the MQW layer, so a window structure is formed that does not absorb output light. Ru.
また、本発明の製造方法においては、端面部に相当する
部分に照射するレーザ光の強度を周囲よりも周期的に弱
くしてＭＱＷ活性層を成長したため、端面部のＭＱＷ層
の層厚は周囲の部分より薄くなる。In addition, in the manufacturing method of the present invention, since the MQW active layer is grown by periodically lowering the intensity of the laser beam irradiated to the portion corresponding to the end face than the surrounding area, the layer thickness of the MQW layer at the end face is smaller than that of the surrounding area. It becomes thinner than the part.
以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図（ａ）〜（ｄ）は本発明の一実施例による半導体
レーザの構造ならびに製造工程を示す断面図である。図
において、１１は−様な強さのレーザ光。FIGS. 1(a) to 1(d) are cross-sectional views showing the structure and manufacturing process of a semiconductor laser according to an embodiment of the present invention. In the figure, 11 is a laser beam with a −-like intensity.
１２はレーザ光１１よりも強度の弱いレーザ光。12 is a laser beam whose intensity is weaker than that of the laser beam 11;
１３はＭＱＷ活性層３よりも層厚の薄いＭＱＷ活性層で
ある。Reference numeral 13 denotes an MQW active layer that is thinner than the MQW active layer 3 .
なお、従来例と同一の符号は同一または相当部分を示す
。Note that the same reference numerals as in the conventional example indicate the same or corresponding parts.
次に、製造工程及び動作について説明する。Next, the manufacturing process and operation will be explained.
第１図（ａ）において、基板ｌに−様な強度のレーザ光
１１を照射しながら材料ガスを流すことにより、ｎ−Ａ
ｌＧａＡｓ下クラッド層２を成長する。In FIG. 1(a), by flowing the material gas while irradiating the substrate l with a laser beam 11 of -like intensity, n-A
A GaAs lower cladding layer 2 is grown.
次いで第１図（ｂ）において、レーザ光１１とレーザ光
１１よりも弱い強度のレーザ光１２を周期的に照射し、
ＭＱＷ活性層を成長する。このとき、成長速度は照射さ
れるレーザ光の強度に比例するため、レーザ光１２を照
射している部分のＭＱＷ層１３の層厚はその他の部分の
ＭＱＷ層３の層厚より薄くなる。その後、第１図（Ｃ）
において、再び−様な強度のレーザ光１１を照射して、
ｐ−ＡＩ！ＧａＡｓ上クラッド層４りｐ−ＧａＡｓコン
タクト層５を成長する。第１図（ｄ）において、層厚の
薄いＭＱＷ層１３部分で襞間して出力光の出射端面部を
形成し７、半導体レーザ装置を完成する。Next, in FIG. 1(b), a laser beam 11 and a laser beam 12 having a weaker intensity than the laser beam 11 are periodically irradiated,
Grow MQW active layer. At this time, since the growth rate is proportional to the intensity of the irradiated laser beam, the layer thickness of the MQW layer 13 in the portion irradiated with the laser beam 12 is thinner than the layer thickness of the MQW layer 3 in other portions. After that, Figure 1 (C)
Then, the laser beam 11 with a similar intensity is irradiated again.
p-AI! A p-GaAs contact layer 5 is grown on the GaAs upper cladding layer 4. In FIG. 1(d), the thin MQW layer 13 is folded to form an output light emitting end face 7, and the semiconductor laser device is completed.
一般に、量子井戸のバンドギャップは量子準位が存在す
るため、量子井戸厚が薄いはとバンドギャップが大きく
なる傾向かある。よって、上述の製造工程で形成された
レーザの端面部分のＭＱＷ層１３は、バンドギャップか
他の部分のＭＱＷ層３よりも広いため、ＭＱＷ活性層３
て発生した出力光に対し透明であり、窓構造となる。In general, since quantum levels exist in the band gap of a quantum well, the thinner the quantum well is, the larger the band gap tends to be. Therefore, since the MQW layer 13 at the end face portion of the laser formed in the above manufacturing process has a wider band gap than the MQW layer 3 at other portions, the MQW active layer 3
It is transparent to the output light generated by the process, and forms a window structure.
このように本実施例では、端面部のＭＱＷ活性層が大き
なバンドギャップを有するように薄くすることで、出力
光吸収のない窓構造を得るようにした。また、本実施例
では、結晶成長の際のレーザ光の強さを周期的に弱くす
ることで、部分的に層厚の薄いＭＱＷ層を形成し、その
層厚の薄い部分で襞間して窓構造となる端面部を形成し
たので、従来のように拡散による無秩序化等の複雑な工
程を行う必要かない。As described above, in this example, the MQW active layer at the end face portion is made thin so as to have a large band gap, thereby obtaining a window structure that does not absorb output light. In addition, in this example, by periodically weakening the intensity of the laser beam during crystal growth, a partially thin MQW layer is formed, and folds are formed in the thin layer. Since the end face portion serving as a window structure is formed, there is no need to perform complicated processes such as disordering by diffusion as in the conventional method.
なお、上記実施例ではＡｌＧａＡｓ系の材料を用いてい
るか、本発明は他の材料、例えばＡｌＧａ ＩｎＰ系の
材料を用いた場合にも適用できる。Although AlGaAs-based materials are used in the above embodiments, the present invention can also be applied to cases where other materials, such as AlGaInP-based materials, are used.
また、上記実施例では、ＭＱＷの活性層を用いたか、５
ＱＷ（単量子゛井戸）活性層を用いてもよい。In addition, in the above embodiment, an MQW active layer was used, or
A QW (single quantum well) active layer may also be used.
さらに、上記実施例では、レーザ光を照射しなからＭＱ
Ｗ層を形成しているか、レーザ光のみならず一般光を照
射してＭＱＷ層を形成するようにしてもよい。Furthermore, in the above embodiment, MQ
A W layer may be formed, or an MQW layer may be formed by irradiating not only laser light but also general light.
［発明の効果〕
以上のように本発明にかかる半導体装置によれば、端面
部分のＭＱＷ活性層の量子井戸厚を他の部分より薄い層
で構成したので、端面部分での出力光の吸収のない窓構
造半導体レーザが得られる効果がある。[Effects of the Invention] As described above, according to the semiconductor device of the present invention, since the quantum well thickness of the MQW active layer in the end face portion is made thinner than in other parts, absorption of output light at the end face portion is reduced. This has the effect of providing a semiconductor laser with a window structure.
さらに、本発明にかかる半導体装置の製造方法によれば
、レーザ光を照射しながら結晶成長を行なうレーザＭＯ
ＣＶＤ法を用い、各素子の端面付近に相当する部分のレ
ーサ光強度を他の部分より弱くするようにしたので、端
面部分のＭＱＷ層を薄く形成することが可能になり、窓
構造となる非吸収層をより簡単な工程によって形成でき
る効果かある。Furthermore, according to the method for manufacturing a semiconductor device according to the present invention, a laser MO is used to perform crystal growth while irradiating laser light.
By using the CVD method, the intensity of the laser light in the area near the end face of each element is made weaker than in other parts, making it possible to form the MQW layer thinner at the end face, thereby reducing the thickness of the non-contact layer that forms the window structure. This has the advantage that the absorbent layer can be formed through a simpler process.
第１図ｆａ）〜（ｄ）はこの発明の一実施例による半導
体レーザの構造及びその製造工程を示す断面図、第２図
は従来の半導体レーザの構造を示す断面図である。
図において、１はｎ−ＧａＡｓ基板、２はｎ−ＡｌＧａ
Ａｓ１２９７１層、３はＭＱＷ活性層。
４はｐ−ＡｌＧａＡｓ上クラッド層、５はり−ＧａＡｓ
コンタクト層、６はＺｎ拡散領域、７はＭＱＷのディス
オーダ領域、１１は−様な強さのレーザ光、１２は１１
よりも強い強度のレーザ光。
１３は３よりも薄いＭＱＷ層である。
なお図中同一符号は同一または相当部分を示す。FIGS. 1fa to 1d are cross-sectional views showing the structure of a semiconductor laser according to an embodiment of the present invention and its manufacturing process, and FIG. 2 is a cross-sectional view showing the structure of a conventional semiconductor laser. In the figure, 1 is an n-GaAs substrate and 2 is an n-AlGa substrate.
As12971 layer, 3 is MQW active layer. 4 is p-AlGaAs upper cladding layer, 5 is -GaAs
contact layer, 6 is a Zn diffusion region, 7 is an MQW disordered region, 11 is a laser beam of −-like intensity, 12 is 11
Laser light with stronger intensity than. 13 is an MQW layer thinner than 3; Note that the same reference numerals in the figures indicate the same or corresponding parts.
Claims (2)
導体レーザにおいて、 前記活性領域の出力光の出射端面部付近の量子井戸の厚
さが他の部分の量子井戸厚よりも薄いことを特徴とする
半導体レーザ。(1) A semiconductor laser having an active region composed of one or more quantum wells, characterized in that the thickness of the quantum well near the output light emitting end facet of the active region is thinner than the thickness of the quantum well in other parts. semiconductor laser.
子井戸層を形成する工程を含む半導体レーザの製造方法
において、 半導体レーザの棒状材料の長手方向に周期的に前記光の
強度を弱くすることによって、周期的に量子井戸の厚み
が他の部分より薄い領域を形成する工程と、 前記量子井戸厚が薄い部分で劈開することにより出力光
の出射端面を形成する工程とを含む半導体レーザの製造
方法。(2) In a method for manufacturing a semiconductor laser including a step of forming a quantum well layer by metal organic vapor phase epitaxy while irradiating light, the intensity of the light is periodically weakened in the longitudinal direction of a rod-shaped material of the semiconductor laser. A semiconductor laser comprising the steps of: periodically forming a region where the thickness of the quantum well is thinner than other portions; and forming an output end facet of output light by cleaving the quantum well at the thinner portion. Production method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2310604A JP2606963B2 (en) | 1990-11-15 | 1990-11-15 | Semiconductor laser and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2310604A JP2606963B2 (en) | 1990-11-15 | 1990-11-15 | Semiconductor laser and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04181788A true JPH04181788A (en) | 1992-06-29 |
| JP2606963B2 JP2606963B2 (en) | 1997-05-07 |
Family
ID=18007259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2310604A Expired - Fee Related JP2606963B2 (en) | 1990-11-15 | 1990-11-15 | Semiconductor laser and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2606963B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5524017A (en) * | 1994-02-10 | 1996-06-04 | Nec Corporation | Quantum well semiconductor laser |
| JP2001244561A (en) * | 2000-02-29 | 2001-09-07 | Sony Corp | Semiconductor light emitting device and method of manufacturing semiconductor light emitting device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS622686A (en) * | 1985-06-28 | 1987-01-08 | Mitsubishi Electric Corp | Semiconductor laser device |
-
1990
- 1990-11-15 JP JP2310604A patent/JP2606963B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS622686A (en) * | 1985-06-28 | 1987-01-08 | Mitsubishi Electric Corp | Semiconductor laser device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5524017A (en) * | 1994-02-10 | 1996-06-04 | Nec Corporation | Quantum well semiconductor laser |
| JP2001244561A (en) * | 2000-02-29 | 2001-09-07 | Sony Corp | Semiconductor light emitting device and method of manufacturing semiconductor light emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2606963B2 (en) | 1997-05-07 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |