JPH04180255A - Cerdip type package for solid-state image sensor - Google Patents
Cerdip type package for solid-state image sensorInfo
- Publication number
- JPH04180255A JPH04180255A JP2309130A JP30913090A JPH04180255A JP H04180255 A JPH04180255 A JP H04180255A JP 2309130 A JP2309130 A JP 2309130A JP 30913090 A JP30913090 A JP 30913090A JP H04180255 A JPH04180255 A JP H04180255A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- solid
- type package
- state image
- cerdip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 125000006850 spacer group Chemical group 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 9
- 238000003384 imaging method Methods 0.000 claims description 15
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 238000007747 plating Methods 0.000 abstract description 15
- 238000000034 method Methods 0.000 abstract description 6
- 238000000926 separation method Methods 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
この発明は固体撮像素子のサーディツプ型パッケージ（
セラミック・デュアル・インライン・パッケージ）に関
する。This invention is based on a cerdip package for a solid-state image sensor (
(ceramic dual in-line package).
従来、固体撮像素子のサーディツプ型パッケージは第１
３図に示すような構造となっている。このサーディツプ
型パッケージ１２０は、ピン状のリード部１０３とこの
リード部１０３を囲む平板枠状の外周部１０５とが一体
に接続されてなる金属製（４２アロイなどからなる）リ
ードフレーム１１ｏを備えている。リード部１０３の上
下には、セラミ、りからなるウィンドフレーム１０１と
ベース１０２とが低融点ガラス１０４によって接着され
ている。なお、１１１はアセンブリ時にリードフレーム
１１０を位置決めするための孔を示している。固体撮像
素子を組み立てる場合、予め金属製リードフレーム１１
０の表面にＳｎなどの外装メッキを施す。そして、第１
４図に示すように、ベース１０２の上に撮像用チップ１
０６をマウントして、この子ツブ１０６とリード部１０
３の端部（内部リード）１０３ａとをＡｕまたはＡＣか
らなるワイヤ１０７によって接続する。さらに、ガラス
またはプラスチックからなり透光性を有するリッド１０
Ｂを接着剤１０９によってウィンドフレーム１０１に貼
り付ける。最後に、電気テストを行って、素子の良否判
定を行う。
半導体素子の作製においては、リードフレーム上の外装
メッキは組立工程の最終段階（電気テスト直前）で行う
のが一般的である。けれども、固体撮像素子の作製にお
いては、組立工程の最終段階で外装メッキを施すように
すると、メ、、キ液がリッド１０８に付着して、その結
果、電気テストで歩留が低下することになる。そこで、
従来より、上に述べたように組立工程の開始前に外装メ
・ツキを施すようにしている。Traditionally, cerdip-type packages for solid-state image sensors were the first
The structure is as shown in Figure 3. This cerdip type package 120 includes a metal lead frame 11o (made of 42 alloy, etc.) in which a pin-shaped lead part 103 and a flat frame-shaped outer peripheral part 105 surrounding the lead part 103 are integrally connected. There is. Above and below the lead portion 103, a wind frame 101 made of ceramic or resin and a base 102 are bonded with a low melting point glass 104. Note that 111 indicates a hole for positioning the lead frame 110 during assembly. When assembling a solid-state image sensor, a metal lead frame 11 is assembled in advance.
Exterior plating such as Sn is applied to the surface of 0. And the first
As shown in FIG. 4, the imaging chip 1 is placed on the base 102.
Mount 06 and attach this child knob 106 and lead part 10.
The end portion (internal lead) 103a of No. 3 is connected to the wire 107 made of Au or AC. Furthermore, a lid 10 made of glass or plastic and having translucency
B is pasted on the wind frame 101 with an adhesive 109. Finally, an electrical test is performed to determine the quality of the element. In the production of semiconductor devices, exterior plating on lead frames is generally performed at the final stage of the assembly process (immediately before electrical testing). However, in the production of solid-state image sensors, if exterior plating is applied at the final stage of the assembly process, the coating liquid will adhere to the lid 108, resulting in a decrease in yield in electrical tests. Become. Therefore,
Traditionally, exterior metallization has been applied before the assembly process begins, as described above.
ところで、第１５図に示すように、上記従来のサーディ
ツプ型パッケージ１２０を用いて固体撮像素子を組み立
てる場合、リードフレーム１１０の外周部１０５と組立
装置の搬送部や治工具（以下「治工具等」という。）２
００とが広い面積にわたって連続的に接触する（図中、
接触箇所Ｃに斜線を付して示している。）。上記外装メ
、ツキは硬度が低いため、数ミクロン径もしくはそれ以
上のメ、ツキ材が簡単に剥離する。この結果、撮像用チ
ップ１０６上に剥離したメッキ材が付着して固体撮像素
子の歩留が低下するという問題かある。
そこで、この発明の目的は、組み立て中に外装メッキに
生じる剥離を著しく減少でき、歩留を向上できる固体撮
像素子のサーディツプ型パッケージを提供することにあ
る。By the way, as shown in FIG. 15, when assembling a solid-state image sensor using the conventional cer-dip package 120, the outer periphery 105 of the lead frame 110, the conveyor section of the assembly device, and jigs and tools (hereinafter referred to as ``jigs, etc.'') )2
00 are in continuous contact over a wide area (in the figure,
The contact point C is shown with diagonal lines. ). Since the hardness of the exterior metal veneer is low, the metal veneer material with a diameter of several microns or more easily peels off. As a result, there is a problem in that the peeled plating material adheres to the imaging chip 106, reducing the yield of solid-state imaging devices. SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a cerdip package for a solid-state image sensor that can significantly reduce peeling of the exterior plating during assembly and improve yield.
上記目的を達成するために、この発明は、撮像用のチッ
プに配線されるピン状のリード部とこのリード部を囲む
平板枠状の外周部とが一体に接続され、外装メッキされ
た金属製リードフレームを備えた固体撮像素子のサーデ
ィツプ型パッケージにおいて、上記リードフレームの上
記外周部に、この外周部の面に略垂直に突出するスペー
サを設けたことを特徴としている。In order to achieve the above object, the present invention provides a method in which a pin-shaped lead part wired to an imaging chip and a flat frame-shaped outer peripheral part surrounding this lead part are integrally connected and are made of a metal plated with an exterior plate. The cerdip type package for a solid-state image sensing device including a lead frame is characterized in that a spacer is provided on the outer periphery of the lead frame and protrudes substantially perpendicularly to the surface of the outer periphery.
リードフレームの外周部に、この外周部の面に略垂直に
突出するスペーサを設けているので、固体撮像素子を組
み立てる場合に、リードフレームのうち治工具等と接触
するのは上記スペーサの先端だけとなる。したがって、
外装メッキされたリードフレームと治工具等とが接触す
る面積が従来に比して著しく減少する。したがって、組
み立て中に外装メッキに生じる剥離が著しく減少し、固
体撮像素子の歩留が向上する。A spacer is provided on the outer periphery of the lead frame that protrudes approximately perpendicularly to the surface of this outer periphery, so when assembling a solid-state image sensor, only the tip of the spacer comes into contact with jigs, etc. of the lead frame. becomes. therefore,
The contact area between the externally plated lead frame and jigs and tools is significantly reduced compared to the conventional method. Therefore, peeling of the exterior plating during assembly is significantly reduced, and the yield of solid-state imaging devices is improved.
以下、この発明の固体撮像素子のサーディツプ型パッケ
ージを実施例により詳細に説明する。
第１図および第２図は第１の実施例のサーディツプ型パ
ッケージ２０を示している。このサーディツプ型パッケ
ージ２０は、ピン状のリード部３とこのリード部３を囲
む平板枠状の外周部５とが一体に接続され、外装メッキ
された金属（４２アロイ）製リードフレーム１０を備え
ている。リード部３の上下には、従来と同様にセラミ・
ツクからなるウィンドフレーム１とベース２とが低融点
ガラス４によって接着されている。第３図に示すように
、上記リードフレーム１０の外周部５には、スペーサと
してこの外周部５の面に略垂直に下方へ突出する突起１
２が複数設けられている。また第１゜２図に示すように
、上記外周部５には、アセンブリ時にリードフレーム１
０を位置決めするための孔１１か設けられている。
このサーディツプ型パッケージを用いて固体撮像素子を
組み立てる場合、第４図に示すように、外装メッキされ
たリードフレーム１０のうち治工具等２００と接触する
のはこの突起１２の先端Ｃ１だけとなる。したがって、
治工具等２００と接触する面積を従来に比して著しく減
少させることができる。したがって、組み立て中に外装
メッキに生じる剥離を著しく減少てき、固体撮像素子の
歩留を向上させることができる。
なお、第５図および第６図に示すように、上記リードフ
レーム１０の外周部５に、上方に突出する突起１３を併
せて設けても良い。このようにした場合、治工具等２０
０によってリードフレーム１０の上下の面を挟む作業を
行ったとしても、外装メッキに生じる剥離を著しく減少
させることができる。
第７図および第８図は第２の実施例のサーディッブ型パ
ッケージ４０を示している。このサーディツプ型パッケ
ージ４０は、外装メッキされたリードフレーム３０の外
周部５に、スペーサとして、この外周部５の面から下方
へ突出するライン状の突出部３２を有している。他の構
成は第１の実施例のサーディツプ型パッケージ２０と同
じである。
突出部３２はリードフレーム１０の外周部５に沿って設
けられている。このサーディツプ型パッケージ４Ｑを用
いて固体撮像素子を組み立てる場合、第９図に示すよう
に、リードフレーム３０のうち治工具等と接触するのは
突出部３２の先端Ｃ３だけとなる。したがって、第１の
実施例と同様に、組み立て中に外装メッキに生じる剥離
を著しく減少でき、固体撮像素子の歩留を向上させるこ
とができる。
第１０図および第１１図は第３の実施例のサーディツプ
型パッケージ６０を示している。このサーディツプ型パ
ッケージ６０は、外装メッキされたリードフレーム５０
の外周部５に、スペーサとして、この外周部５の側端に
断面り状に連なり、下方へ突出するエツジ部５２を有し
ている。他の構成は第１．第２の実施例のサーディツプ
型パ。
ケージ２０．４０と同じである。このサーティ。
プ型パッケージ６０を用いて固体撮像素子を組み立てる
場合、第１２図に示すように、リードフレーム５０のう
ち治工具等に接触するのはエツジ部５２の先端Ｃ１たけ
となる。したかって、第１．第′２の実施例と同様に、
組み立て中に外装メッキに生じる剥離を著しく減少でき
、固体撮像素子の歩留を向上させることができる。
なお、第１．第２．第３の実施例において、リードフレ
ーム１０．３０．５０にそれぞれ設けた突起１２および
１３．突出部３２．エツジ部５２は、いずれも各リード
フレームの外装メッキ前の成型時（パンチング成型時ま
たはプレス成型時）に形成スる。ただし、専用装置を用
いて外装メッキ後に形成することもできる。Hereinafter, the cerdip type package for the solid-state image sensing device of the present invention will be explained in detail with reference to examples. 1 and 2 show a first embodiment of a cerdip type package 20. FIG. This cerdip type package 20 includes a lead frame 10 made of metal (42 alloy) with a plated exterior, in which a pin-shaped lead part 3 and a flat frame-shaped outer peripheral part 5 surrounding the lead part 3 are integrally connected. There is. The top and bottom of the lead part 3 are made of ceramic as in the past.
A wind frame 1 made of wood and a base 2 are bonded together with a low melting point glass 4. As shown in FIG. 3, on the outer circumferential portion 5 of the lead frame 10, there is a projection 1 which protrudes downward approximately perpendicularly to the surface of the outer circumferential portion 5 as a spacer.
2 are provided. Further, as shown in FIGS. 1-2, the outer peripheral portion 5 is provided with a lead frame 1 during assembly.
A hole 11 for positioning 0 is provided. When assembling a solid-state imaging device using this cerdip type package, only the tip C1 of the protrusion 12 comes into contact with the jig or tool 200 of the externally plated lead frame 10, as shown in FIG. therefore,
The area in contact with the jig, etc. 200 can be significantly reduced compared to the conventional method. Therefore, peeling of the exterior plating during assembly can be significantly reduced, and the yield of solid-state imaging devices can be improved. Incidentally, as shown in FIGS. 5 and 6, a protrusion 13 that protrudes upward may also be provided on the outer peripheral portion 5 of the lead frame 10. If you do this, 20 jigs, tools, etc.
Even if the upper and lower surfaces of the lead frame 10 are sandwiched between the lead frame 10 and the upper and lower surfaces of the lead frame 10, peeling that occurs in the exterior plating can be significantly reduced. FIGS. 7 and 8 show a second embodiment of a cerdiv type package 40. FIG. This cerdip type package 40 has a line-shaped protrusion 32 which projects downward from the surface of the outer circumference 5 as a spacer on the outer circumference 5 of the lead frame 30 which is plated. The other configurations are the same as the cerdip type package 20 of the first embodiment. The protruding portion 32 is provided along the outer peripheral portion 5 of the lead frame 10 . When assembling a solid-state imaging device using this cerdip type package 4Q, only the tip C3 of the protruding portion 32 comes into contact with a jig or the like in the lead frame 30, as shown in FIG. Therefore, as in the first embodiment, peeling of the exterior plating during assembly can be significantly reduced, and the yield of solid-state imaging devices can be improved. FIGS. 10 and 11 show a third embodiment of a cerdip type package 60. FIG. This cerdip type package 60 has a lead frame 50 which is plated on the exterior.
The outer circumferential portion 5 has an edge portion 52 serving as a spacer that extends in a cross-sectional shape at the side end of the outer circumferential portion 5 and projects downward. Other configurations are No. 1. A third embodiment of the third embodiment. Same as cage 20.40. This thirty. When assembling a solid-state imaging device using the double package 60, as shown in FIG. 12, only the tip C1 of the edge portion 52 comes into contact with a jig or the like in the lead frame 50. The first thing I want to do is. Similarly to the '2nd embodiment,
Peeling of the exterior plating during assembly can be significantly reduced, and the yield of solid-state imaging devices can be improved. In addition, 1. Second. In a third embodiment, the projections 12 and 13. are provided on the lead frame 10.30.50, respectively. Projection portion 32. The edge portions 52 are formed during molding (during punch molding or press molding) of each lead frame before exterior plating. However, it can also be formed after exterior plating using a dedicated device.
以上より明らかなように、この発明の固体撮像素子のサ
ーディツプ型パッケージは、外装メッキされたリードフ
レームの外周部に、この外周部の面に略垂直に突出する
スペーサを設けているので、組み立て中に外装メッキに
生しる剥離を著しく減少°でき、固体撮像素子の歩留を
向上させることができる。As is clear from the above, the cerdip type package for a solid-state image sensor of the present invention has a spacer protruding approximately perpendicularly to the surface of the outer periphery on the outer periphery of the externally plated lead frame. The peeling that occurs on the exterior plating can be significantly reduced, and the yield of solid-state imaging devices can be improved.
第１図、第２図はそれぞれこの発明の第１の実施例のサ
ーディツプ型パッケージの構造を示す斜視図、断面図、
第３図は上記サーブ４ ｙプ型パ・７ケージのリードフ
レームを示す図、第４図は上記サーディツプ型パッケー
ジを用いて固体撮像素子を組み立てる状態を示す図、第
５図および第６図は上記サーディツプ型パッケージのリ
ードフレームの変形例を示す図である。また、第７図、
第８図はそれぞれこの発明の第２の実施例のサーディツ
プ型パッケージの構造を示す斜視図、断面図、第９図は
上記サーディツプ型パッケージのリードフレームを示す
図、第１０図、第１１図はそれぞれこの発明の第３の実
施例のサーディツプ型パッケージの構造を示す斜視図、
断面図、第１２図は上記サーディツプ型パッケージのリ
ードフレームを示す図、第１３図は従来のサーディツプ
型パッケージを示す斜視図、第１４図は′上記サーディ
ツプ型バ、ケージを用いて組み立てた固体撮像素子を示
す断面図、第１５図は上記固体撮像素子の組み立て中の
状態を示す図である。
ｌ・・・ウィンドフレーム、２・・・ベース、３・・・
リード部、４・・・低融点ガラス、５・・・外周部、１
０．３０．５０・・・リードフレーム、１１・・・位置
決め用の孔、１２． ｌ ３・・・突起、２０、４０．
６０・・サーディツプ型パッケージ、３２・・突出部、
５２・・エツジ部、Ｃ，、Ｃ，、Ｃ，・・・
先端。FIGS. 1 and 2 are a perspective view, a sectional view, and a cross-sectional view, respectively, showing the structure of a cerdip-type package according to a first embodiment of the present invention.
FIG. 3 is a diagram showing the lead frame of the Saab 4 Y-type package, FIG. 4 is a diagram showing how a solid-state image sensor is assembled using the Saab-4 Y-type package, and FIGS. 5 and 6 are FIG. 7 is a diagram showing a modification of the lead frame of the cerdip type package. Also, Figure 7,
FIG. 8 is a perspective view and a sectional view showing the structure of a cerdip type package according to a second embodiment of the present invention, FIG. 9 is a view showing a lead frame of the cerdip type package, and FIGS. 10 and 11 are A perspective view showing the structure of a cerdip type package according to a third embodiment of the present invention, respectively;
12 is a diagram showing a lead frame of the above-mentioned cerdip type package, Fig. 13 is a perspective view showing a conventional cerdip type package, and Fig. 14 is a solid-state imaging device assembled using the above-mentioned cerdip type bar and cage. FIG. 15, which is a sectional view showing the device, is a diagram showing a state in which the solid-state image sensing device is being assembled. l...wind frame, 2...base, 3...
Lead part, 4...Low melting point glass, 5...Outer peripheral part, 1
0.30.50...Lead frame, 11...Positioning hole, 12. l 3...Protrusion, 20, 40.
60...Tardip type package, 32...Protrusion part,
52... Edge part, C,, C,, C,...
tip.
Claims (1)
このリード部を囲む平板枠状の外周部とが一体に接続さ
れ、外装メッキされた金属製リードフレームを備えた固
体撮像素子のサーディップ型パッケージにおいて、 上記リードフレームの上記外周部に、この外周部の面に
略垂直に突出するスペーサを設けたことを特徴とする固
体撮像素子のサーディップ型パッケージ。(1) A solid-state imaging device with a metal lead frame with a plated exterior, in which a pin-shaped lead wired to an imaging chip and a flat frame-shaped outer peripheral part surrounding the lead are connected together. A cerdip-type package for a solid-state image sensor, characterized in that a cerdip-type package for a solid-state image pickup device is provided on the outer periphery of the lead frame, the spacer projecting substantially perpendicularly to the surface of the outer periphery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2309130A JP2592181B2 (en) | 1990-11-14 | 1990-11-14 | Sardip type package for solid-state image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2309130A JP2592181B2 (en) | 1990-11-14 | 1990-11-14 | Sardip type package for solid-state image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04180255A true JPH04180255A (en) | 1992-06-26 |
| JP2592181B2 JP2592181B2 (en) | 1997-03-19 |
Family
ID=17989260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2309130A Expired - Fee Related JP2592181B2 (en) | 1990-11-14 | 1990-11-14 | Sardip type package for solid-state image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2592181B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5477075A (en) * | 1994-12-16 | 1995-12-19 | Advanced Photonix, Inc. | Solid state photodetector with light-responsive rear face |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63185051A (en) * | 1987-01-27 | 1988-07-30 | Nec Kyushu Ltd | Ceramic package for semiconductor device |
| JPS63191649U (en) * | 1987-05-28 | 1988-12-09 |
-
1990
- 1990-11-14 JP JP2309130A patent/JP2592181B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63185051A (en) * | 1987-01-27 | 1988-07-30 | Nec Kyushu Ltd | Ceramic package for semiconductor device |
| JPS63191649U (en) * | 1987-05-28 | 1988-12-09 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5477075A (en) * | 1994-12-16 | 1995-12-19 | Advanced Photonix, Inc. | Solid state photodetector with light-responsive rear face |
| US5801430A (en) * | 1994-12-16 | 1998-09-01 | Advanced Photonix, Inc. | Solid state photodetector with light-responsive rear face |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2592181B2 (en) | 1997-03-19 |
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