JPH04177849A - Probing device - Google Patents
Probing deviceInfo
- Publication number
- JPH04177849A JPH04177849A JP2306890A JP30689090A JPH04177849A JP H04177849 A JPH04177849 A JP H04177849A JP 2306890 A JP2306890 A JP 2306890A JP 30689090 A JP30689090 A JP 30689090A JP H04177849 A JPH04177849 A JP H04177849A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- stage
- probe
- polishing plate
- dust
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 claims abstract description 16
- 239000000853 adhesive Substances 0.000 claims description 7
- 230000001070 adhesive effect Effects 0.000 claims description 7
- 239000000523 sample Substances 0.000 abstract description 27
- 239000000428 dust Substances 0.000 abstract description 15
- 239000000919 ceramic Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 23
- 238000005259 measurement Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は多数の半導体集積回路が形成された領域をもつ
ウェーハの各領域の電気特性を測定するのに使用される
プロービング装置に関し、特に、プロービング装置にお
けるウェーハを搭載するステージに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a probing device used to measure the electrical characteristics of each region of a wafer having a region in which a large number of semiconductor integrated circuits are formed. The present invention relates to a stage on which a wafer is mounted in a probing device.
第２図（ａ）及び（ｂ）は従来のプロービング装置の一
例を説明するためのステージを示す上面図及びＢ−Ｂ断
面図である。従来、この種のプロービング装置は、同図
に示すように、ウェーハ１を搭載し、測定すべき集積回
路領域を測定位置に位置決めするステージ２と、集積回
路領域にある入出力用パッドに接触するプローブ４と、
これらプローブ４を保持するプローブカード３と、この
プローブカード３と配線ケーブルを介して接続する試験
装置本体（図示せず）とを有している。FIGS. 2(a) and 2(b) are a top view and a sectional view taken along the line B-B of a stage for explaining an example of a conventional probing device. Conventionally, as shown in the figure, this type of probing apparatus includes a stage 2 on which a wafer 1 is mounted, a stage 2 that positions an integrated circuit area to be measured at a measurement position, and a stage 2 that contacts input/output pads in the integrated circuit area. Probe 4 and
It has a probe card 3 that holds these probes 4, and a test device main body (not shown) that is connected to the probe card 3 via a wiring cable.
次に、このプロービング装置の動作を説明する。まず、
測定すべきウェーハ１をステージ２の上に乗せる。次に
、ステージ２に接続されている真空ポンプ（図示せず）
を作動させ、ウェーハ１をステージ２に密着させる。次
に、ステージ２は移動し、ウェーハ１面上の測定すべき
領域をプローブカード３の下に位置決めする。次に、プ
ローブカード３が下降し、測定すべき領域のボンディン
グパッドとプローブ４と接触する。次に、試験装置本体
よりプローブカード３を介して測定すべき領域の集積回
路に種々の信号を送り、プローブカード３より送り返さ
れる電気信号により試験装置本体側で測定し判定を行う
。一つの回路領域の測定が完了すると、プローブカード
３は上昇し、ステージ２により次の測定すべき領域がプ
ローブ・カード３の下に来るように位置決めし、測定を
行う。このような動作を繰り返して、ウェーハにある集
積回路領域の全数の試験を行っていた。Next, the operation of this probing device will be explained. first,
A wafer 1 to be measured is placed on a stage 2. Next, a vacuum pump (not shown) connected to stage 2
is activated to bring the wafer 1 into close contact with the stage 2. Next, the stage 2 moves to position the area to be measured on the surface of the wafer 1 under the probe card 3. Next, the probe card 3 descends and contacts the bonding pads and probes 4 in the area to be measured. Next, various signals are sent from the test device main body to the integrated circuit in the area to be measured via the probe card 3, and the test device main body side performs measurements and judgments based on electrical signals sent back from the probe card 3. When the measurement of one circuit area is completed, the probe card 3 is raised, and the next area to be measured is positioned under the probe card 3 by the stage 2, and measurement is performed. By repeating these operations, all integrated circuit areas on the wafer were tested.
上述した従来のウェーハプロービング装置では、測定す
る毎にプローブの先にアルミニウムとかあるいはシリコ
ン層といったごみが付着することがあり、このごみがウ
ェーハ上に落ち、集積回路の特性を劣化させたりする欠
点があった。特に光学的機能をもつ固体撮像素子の場合
は、その収率を低下させるという欠点があった。The above-mentioned conventional wafer probing equipment has the disadvantage that dust such as aluminum or silicon layer may adhere to the tip of the probe every time a measurement is performed, and this dust falls onto the wafer and deteriorates the characteristics of the integrated circuit. there were. In particular, in the case of a solid-state image sensor having an optical function, there is a drawback that the yield is reduced.
本発明の目的は、かかる欠点を解消し、ウェーハ上にご
みを落下させ集積回路の特性を損うことのないプロービ
ング装置を提供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to provide a probing apparatus which eliminates such drawbacks and does not cause dust to fall onto a wafer and thereby do not damage the characteristics of integrated circuits.
本発明のプロービング装置は、ウェーハを搭載するステ
ージと、前記ウェーハの外周囲に配置される研磨板また
は粘着シートとを有している。The probing apparatus of the present invention includes a stage on which a wafer is mounted, and a polishing plate or adhesive sheet placed around the wafer.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図（ａ＞及び（ｂ）は本発明のプロービング装置の
一実施例を説明するためのステージを示す平面図及びＡ
−Ａ断面図である。このプロービング装置は、第１図（
ａ）及び（ｂ）に示すように、そのステージ２ａに乗せ
られているウェーク１１の周囲に研磨板５を備えたこと
である。それ以外は従来例と同じである。1(a) and (b) are plan views showing a stage for explaining one embodiment of the probing device of the present invention, and FIG.
-A sectional view. This probing device is shown in Figure 1 (
As shown in a) and (b), a polishing plate 5 is provided around the wake 11 placed on the stage 2a. Other than that, it is the same as the conventional example.
次に、このプロービング装置の動作を説明する。まず、
従来例と同様に、ステージ１２上にウェーハ１かステー
ジ２ａに真空吸着される。次に、ウェーハ１の外側のプ
ロブカード３とステージの相対的移動し、プローブカー
ド３の下に測定すべき回路領域に位置決めする。ここで
、ステージ２ａにはセラミック製の研磨板１５が取付け
られているので、電気的特性試験中プローブ１４はウェ
ーハ内全チップと接触するが、プローブカード３とステ
ージ２ａの相対移動に際して、必ず、プローブ４の先端
は、ウェーハの外側にも接触するので、研磨板１５とも
接触することになる。このため、プローブ４の先に付着
したごみは研磨板１５により取除かれる。従って、ウェ
ーハ上に落下するゴミが減少し、集積回路領域である固
体撮像素子の収率が向上するという利点がある。また、
図面には示さないが、研磨板の代りに粘着面をもつ樹脂
シートを貼付けても、同様の効果が得られる。勿論この
樹脂シートの粘着力はプローブを曲げない程度の強さを
もつ必要がある。また、この実施例の他に内側に研磨板
を、その外側に粘着面をもつ樹脂シートを貼付ける方法
もある。Next, the operation of this probing device will be explained. first,
As in the conventional example, the wafer 1 is vacuum-adsorbed onto the stage 12 or onto the stage 2a. Next, the probe card 3 outside the wafer 1 and the stage are moved relative to each other to position the circuit area under the probe card 3 to be measured. Here, since a ceramic polishing plate 15 is attached to the stage 2a, the probe 14 comes into contact with all the chips in the wafer during the electrical property test, but when the probe card 3 and the stage 2a move relative to each other, Since the tip of the probe 4 also contacts the outside of the wafer, it also comes into contact with the polishing plate 15. Therefore, the dust attached to the tip of the probe 4 is removed by the polishing plate 15. Therefore, there is an advantage that the amount of dust falling onto the wafer is reduced and the yield of solid-state image sensing devices, which are integrated circuit areas, is improved. Also,
Although not shown in the drawings, a similar effect can be obtained by attaching a resin sheet with an adhesive surface instead of the polishing plate. Of course, the adhesive force of this resin sheet needs to be strong enough not to bend the probe. In addition to this embodiment, there is also a method of attaching a polishing plate to the inside and a resin sheet with an adhesive surface to the outside.
この場合は、研磨板でごみを削り取り、更に粘着面でそ
のごみを補足し、他の、例えば、ウェーハ上にごみを再
度飛散させないという利点かある。In this case, there is an advantage that the polishing plate scrapes off the dust and the adhesive surface captures the dust, thereby preventing the dust from scattering again onto other surfaces, such as wafers.
以上説明したように本発明は、ウェーハを搭載するステ
ージのウェーハの周囲上に研磨板あるいは粘着シートを
取付けることにより、プローブ先のゴミを除去し、ウェ
ーハ上に落下するごみを減少させ、集積回路領域である
固体撮像素子の収率を向上させるプロービング装置が得
られるという効果がある。As explained above, the present invention removes dust from the probe tip by attaching a polishing plate or an adhesive sheet around the wafer on the stage on which the wafer is mounted, reduces the dust falling onto the wafer, and reduces the amount of dust falling onto the wafer. This has the effect of providing a probing device that improves the yield of solid-state imaging devices.
第１図（ａ）及び（ｂ）は本発明のプロービング装置の
一実施例を説明するためのステージを示す平面図、及び
Ａ−Ａ断面図、第２図（ａ）及び（ｂ）は従来プロービ
ング装置の一例を説明するためのステージを示す平面図
及びＢ−Ｂ断面図である。
１・・・ウェーハ、２，２ａ・・・ステージ、３・・・
ブローブカード、４・・・プローブ、５・・・研磨板。
代理人 弁理士 内 原 音
（α）
椙１ 履FIGS. 1(a) and (b) are a plan view and a sectional view taken along line A-A of a stage for explaining one embodiment of the probing device of the present invention, and FIGS. 2(a) and (b) are conventional FIG. 2 is a plan view and a BB sectional view showing a stage for explaining an example of a probing device. 1... Wafer, 2, 2a... Stage, 3...
Probe card, 4...probe, 5...polishing plate. Agent Patent Attorney Uchihara Oto (α) Sugi1
Claims (1)
周囲に配置される研磨板とを備えることを特徴とするプ
ロービング装置。 ２、前記研磨板の代りに粘着シートを貼付けたことを特
徴とする請求項１のプロービング装置。[Claims] 1. A probing apparatus comprising a stage on which a wafer is mounted, and a polishing plate arranged around the outer periphery of the wafer. 2. The probing device according to claim 1, wherein an adhesive sheet is attached in place of the polishing plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2306890A JPH04177849A (en) | 1990-11-13 | 1990-11-13 | Probing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2306890A JPH04177849A (en) | 1990-11-13 | 1990-11-13 | Probing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04177849A true JPH04177849A (en) | 1992-06-25 |
Family
ID=17962489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2306890A Pending JPH04177849A (en) | 1990-11-13 | 1990-11-13 | Probing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04177849A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6306187B1 (en) | 1997-04-22 | 2001-10-23 | 3M Innovative Properties Company | Abrasive material for the needle point of a probe card |
| JP2012233811A (en) * | 2011-05-06 | 2012-11-29 | Nitto Denko Corp | Cleaning sheet, cleaning member, cleaning method, and conduction test device |
| JP2014081234A (en) * | 2012-10-15 | 2014-05-08 | Micronics Japan Co Ltd | Inspection device |
-
1990
- 1990-11-13 JP JP2306890A patent/JPH04177849A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6306187B1 (en) | 1997-04-22 | 2001-10-23 | 3M Innovative Properties Company | Abrasive material for the needle point of a probe card |
| JP2012233811A (en) * | 2011-05-06 | 2012-11-29 | Nitto Denko Corp | Cleaning sheet, cleaning member, cleaning method, and conduction test device |
| JP2014081234A (en) * | 2012-10-15 | 2014-05-08 | Micronics Japan Co Ltd | Inspection device |
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