JPH04175259A - Voltage-nonlinear resistance ceramic composition - Google Patents
Voltage-nonlinear resistance ceramic compositionInfo
- Publication number
- JPH04175259A JPH04175259A JP2301966A JP30196690A JPH04175259A JP H04175259 A JPH04175259 A JP H04175259A JP 2301966 A JP2301966 A JP 2301966A JP 30196690 A JP30196690 A JP 30196690A JP H04175259 A JPH04175259 A JP H04175259A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- mol
- ceramic composition
- nonlinear resistance
- resistance ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 12
- 239000000919 ceramic Substances 0.000 title claims abstract description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000011787 zinc oxide Substances 0.000 claims abstract description 9
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract 3
- 229910052776 Thorium Inorganic materials 0.000 claims abstract 3
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract 3
- 229910052787 antimony Inorganic materials 0.000 claims abstract 3
- 229910052797 bismuth Inorganic materials 0.000 claims abstract 3
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims 1
- UPWOEMHINGJHOB-UHFFFAOYSA-N oxo(oxocobaltiooxy)cobalt Chemical compound O=[Co]O[Co]=O UPWOEMHINGJHOB-UHFFFAOYSA-N 0.000 abstract description 10
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 abstract description 8
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract description 6
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 abstract description 3
- 229910004369 ThO2 Inorganic materials 0.000 abstract description 2
- ZCUFMDLYAMJYST-UHFFFAOYSA-N thorium dioxide Chemical compound O=[Th]=O ZCUFMDLYAMJYST-UHFFFAOYSA-N 0.000 abstract description 2
- FIXNOXLJNSSSLJ-UHFFFAOYSA-N ytterbium(III) oxide Inorganic materials O=[Yb]O[Yb]=O FIXNOXLJNSSSLJ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052748 manganese Inorganic materials 0.000 abstract 2
- 239000011701 zinc Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 235000018185 Betula X alpestris Nutrition 0.000 description 1
- 235000018212 Betula X uliginosa Nutrition 0.000 description 1
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、各種電子機器などの回路電圧の安定化や、サ
ージ及びノイズ吸収などに適用される電圧非直線性抵抗
体磁器組成物に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a voltage nonlinear resistor ceramic composition that is applied to stabilize circuit voltage of various electronic devices, absorb surges, and noise, etc. .
従来の技術
電圧非直線性抵抗体の代表的なものとして、酸化亜鉛（
ＺｎＯ）を主成分とするＺｎＯバリスタが一般的に知ら
れている。このＺｎＯバリスタは、電圧非直線性が良く
、サージ電流耐量が大きいなどの特徴を有するものであ
る。その製造方法は、ＺｎＯに微量のＢ １２０３．Ｃ
ｏ２Ｏ３，ＭｎＯ：。Zinc oxide (
ZnO varistors whose main component is ZnO are generally known. This ZnO varistor has characteristics such as good voltage nonlinearity and large surge current withstand capacity. The manufacturing method involves adding a trace amount of B 1203. to ZnO. C
o2O3, MnO:.
Ｓｂ２Ｏ３，５ｉ０２などを加え混合し、成形後、１０
００〜１３００℃で焼結させることにより得られる。そ
して、上記微量成分の種類及び比率により、任意のバリ
スタ電圧を得ることができる。Add and mix Sb2O3, 5i02, etc., and after molding, 10
It is obtained by sintering at 00 to 1300°C. Any desired varistor voltage can be obtained depending on the types and ratios of the trace components.
このＺｎＯバリスタのバリスタ電圧は、素子厚みに比例
するものであり、高いバリスタ電圧を得る場合は厚みを
厚くすればよい。したがって、素子の小形化を行うには
、単位厚み当りのバリスタ電圧（Ｖｌ−Ａ／ｍ）を高く
することが必要である。上記微量成分の中で特に酸化ケ
イ素（ＳｉＣ２）は、Ｚｎ○の粒成長を抑制し、Ｖ＋ｍ
Ａ／ｎｕｎを高くする成分として広く知られている。The varistor voltage of this ZnO varistor is proportional to the element thickness, and in order to obtain a high varistor voltage, the thickness may be increased. Therefore, in order to downsize the device, it is necessary to increase the varistor voltage per unit thickness (Vl-A/m). Among the trace components mentioned above, silicon oxide (SiC2) in particular suppresses grain growth of Zn○ and increases V+m
It is widely known as a component that increases A/nun.
発明が解決しようとする課題
しかし、従来の５ｉ（ｈを用いた組成の場合、他の成分
に比べ高比重が著しく軽く、沈降性の材料を用いても充
分粉砕されず、この結果、焼結体にボイドが発生し、サ
ージ電流耐量が低下するという課題を有していた。Problems to be Solved by the Invention However, in the case of a composition using conventional 5i (h), its high specific gravity is extremely light compared to other components, and even if a sedimentary material is used, it is not sufficiently pulverized, and as a result, sintering The problem was that voids were generated in the body, reducing the ability to withstand surge currents.
本発明はこのような従来の課題を解決するもので、サー
ジ電流耐量に優れたＶ ｌ ｆｆｉ Ａ 、−” １１
１１１１の高い（２００Ｖ以上）電圧非直線性抵抗体を
提供することを目的とする。The present invention solves these conventional problems, and provides a V lffi A with excellent surge current resistance.
The purpose of the present invention is to provide a high (200V or more) voltage nonlinear resistor of 1111.
課題を解決するための手段
この目的を達成するために本発明の電圧非直線性抵抗体
磁器組成物は、Ｚｎ○、Ｂ １２０３．Ｃｏ２Ｏ３゜Ｍ
ｎＯ２，Ｓｂ２Ｏ３からなる組成に、ＴｈＯ２，Ｇｄ２
Ｏ３，Ｙｂ２Ｏ３のうち少なくとも１種を０．０１〜３
．００モル％含有するものである。Means for Solving the Problems In order to achieve this object, the voltage nonlinear resistor ceramic composition of the present invention is composed of Zn○, B 1203. Co2O3゜M
In the composition consisting of nO2, Sb2O3, ThO2, Gd2
At least one of O3 and Yb2O3 from 0.01 to 3
．． It contains 00 mol%.
作用
これにより、Ｔｈ０２．Ｇｄ２Ｏ３，ＹｂｐＯ３のうち
少なくとも１種を０．０１〜３．００モル％含有するこ
とにより、サージ電流耐量が向上し、さらにＶＩＩＩＡ
／１１１１が高くなるため素子の大幅な小形化ができる
。Effect: As a result, Th02. By containing 0.01 to 3.00 mol% of at least one of Gd2O3 and YbpO3, the surge current withstand capacity is improved, and VIIIA
/1111 becomes high, so the device can be significantly downsized.
実施例 以下、本発明を実施例に従って詳細に説明する。Example Hereinafter, the present invention will be explained in detail according to examples.
まず、Ｚｎ○にＢｉ２Ｏ３，Ｃｏ２Ｏ３，ＭｎＯ２゜Ｓ
ｂ２０３． Ｓ ｉ ０２．Ｔ ｈ ０２．Ｇ ｄ２
０３．Ｙｂ２ｏ３をそれぞれ下記の第１表に示す比率で
配合した。First, add Bi2O3, Co2O3, MnO2゜S to Zn○.
b203. S i 02. Th 02. G d2
03. Yb2o3 was blended in the ratios shown in Table 1 below.
この粉体をボールミルで湿式混合及び粉砕を行い、有機
バインダを加え混合し、スプレードライヤーで造粒を行
った。その造粒粉を、１０００ ｋｇ ／’ ｃｎｆの
圧力で成形し、径１３ｗｆｆＲ，厚み１．３１１１１１
の成形体を得た。これを１１５０℃で３時間焼成を行っ
たのち、両端面にＡｇ電極を４５０〜８５０℃で焼付け
て設け、リード線の半田付けを行った。最後に熱硬化性
樹脂によりコーティングし試料とした。This powder was wet mixed and pulverized using a ball mill, an organic binder was added and mixed, and granulation was performed using a spray dryer. The granulated powder was molded at a pressure of 1000 kg/'cnf, and the diameter was 13wffR and the thickness was 1.311111.
A molded body was obtained. After baking this at 1150°C for 3 hours, Ag electrodes were baked at 450 to 850°C on both end faces, and lead wires were soldered. Finally, it was coated with a thermosetting resin and used as a sample.
以上の試料について、単位厚み当りのバリスタ電圧（Ｖ
ＩＩＩＩＡ ／ｗｎ） 、電圧非直線係数（α）を測定
し、その結果を第１表に併せて示す。第１表でｖｌ、Ａ
／Ｗｆｆｌは、１ｍＡの電流を流した時の素子の厚みＩ
Ｉ当りの端子間電圧を示す。また、αは１ｍＡと１００
μＡの各電流を流した時のバリスタ電圧から下記式によ
り算出した。For the above samples, the varistor voltage (V
IIIA/wn) and the voltage nonlinear coefficient (α) were measured, and the results are also shown in Table 1. In Table 1, vl, A
/Wffl is the thickness I of the element when a current of 1 mA is applied.
Indicates the voltage between terminals per I. Also, α is 1mA and 100
It was calculated using the following formula from the varistor voltage when each μA current was applied.
但し、Ｉ＋、Ｉ：：測定電流
ｖ、、ｖ、、 ： Ｉ ｌ＋ Ｉ 、、＋：：おけるバ
リスタ電圧また、各試料にＪＥＣに規定される８／２０
μｓの標準波形で３０００Ａのサージ電流を２回印加し
、バリスタ電圧を測定した。その時のバリスタ電圧と初
期値の変化率（ΔＶ１１ＩＩＡ）を第１表に示す。However, the varistor voltage at I+, I:: measurement current v,, v, : I l+ I,, +:: Also, the 8/20 specified by JEC for each sample
A surge current of 3000 A was applied twice with a standard waveform of μs, and the varistor voltage was measured. Table 1 shows the varistor voltage and the rate of change of the initial value (ΔV11IIA) at that time.
（以 下 余 白）
第１表の結果から、Ｂｉｒｃｈが０．１モ几Ｑ。未満で
はΔＶｌ＋＊Ａが大きくなり、３．０モル％を超えると
αが小さくなり、またΔＶＩｍＡも大きくなる。また、
Ｃｏ２Ｏ３，ＭｎＯ２が０．１モル９０未満や３．０モ
ル％を超える場合には、αが低下し、Δｖ１１Ｉ＾も大
きくなる。さらに、Ｓｂ２Ｏ３が０．５モル％未満では
、Ｖ１１１Ａ／Ｉｌｌ！１が低く、またΔＶ１ｍＡも大
きくなり、３．０モル％を超えるとαが悪くなる。そし
て、ＴｈＯ：、Ｇｄ２Ｏ３，ｙｂ、ｏ３か０．０１モル
％未満ではＶ＋ｍＡ／ｍｍが低く、ΔｖｌｅＡも大きく
なる。また、３．００モル％を超えるとαが悪くなり、
Δｖ１□Ａも大きくなる。(Left below) From the results in Table 1, Birch is 0.1 mo Q. If it is less than 3.0 mol %, ΔVl+*A becomes large, and if it exceeds 3.0 mol %, α becomes small and ΔVImA also becomes large. Also,
When the amount of Co2O3 and MnO2 is less than 0.1 mol 90 or more than 3.0 mol %, α decreases and Δv11I^ also increases. Furthermore, when Sb2O3 is less than 0.5 mol%, V111A/Ill! 1 is low, ΔV1mA also becomes large, and if it exceeds 3.0 mol%, α becomes worse. When ThO:, Gd2O3, yb, o3 is less than 0.01 mol%, V+mA/mm is low and ΔvleA is also large. Moreover, if it exceeds 3.00 mol%, α becomes worse,
Δv1□A also increases.
なお、副成分として、さらにＮ ｉ Ｏ，Ｃｒ２０３゜
５ｎ０２．Ａ ＋２０３．Ｂ２Ｏ５，ＭｇＯなどを加え
ることにより、非直線性を一層改善することができる。In addition, N i O, Cr203°5n02. A +203. By adding B2O5, MgO, etc., nonlinearity can be further improved.
発明の効果
以上、このようにＴｈ０２．Ｇｄｚｏ３． Ｙｂ：０３
のうち少なくとも１種を０．０１〜３．００モルＯ９含
有することにより、サージ電流耐量に優れ、単位当りの
バリスタ電圧が高くなり、小形の電圧非直線性抵抗体を
提供することができる。Above and beyond the effects of the invention, Th02. Gdzo3. Yb:03
By containing 0.01 to 3.00 mol O9 of at least one of these, it is possible to provide an excellent surge current withstand capacity, a high varistor voltage per unit, and a small voltage nonlinear resistor.
Claims (1)
マス，コバルト，マンガン，アンチモンをそれぞれＢｉ
＿２Ｏ＿３，Ｃｏ＿２Ｏ＿３，ＭｎＯ＿２，Ｓｂ＿２Ｏ
＿３に換算して、 Ｂｉ＿２Ｏ＿３ ０．１〜３．０モル％ Ｃｏ＿２Ｏ＿３ ０．１〜３．０モル％ ＭｎＯ＿２ ０．１〜３．０モル％ Ｓｂ＿２Ｏ＿３ ０．５〜３．０モル％ からなる組成に、トリウム，ガドリニウム，イッテルビ
ウムのうち少なくとも１種をそれぞれＴｈＯ＿２，Ｇｄ
＿２Ｏ＿３，Ｙｂ＿２Ｏ＿３に換算して、０．０１〜３
．００モル％含有することを特徴とする電圧非直線性抵
抗体磁器組成物。[Scope of Claims] Zinc oxide is the main component, and at least bismuth, cobalt, manganese, and antimony are added as subcomponents.
_2O_3, Co_2O_3, MnO_2, Sb_2O
In terms of _3, the composition consists of Bi_2O_3 0.1-3.0 mol% Co_2O_3 0.1-3.0 mol% MnO_2 0.1-3.0 mol% Sb_2O_3 0.5-3.0 mol% , at least one of thorium, gadolinium, and ytterbium as ThO_2 and Gd, respectively.
_2O_3, converted to Yb_2O_3, 0.01 to 3
．． A voltage nonlinear resistor ceramic composition characterized by containing 00 mol%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2301966A JPH04175259A (en) | 1990-11-06 | 1990-11-06 | Voltage-nonlinear resistance ceramic composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2301966A JPH04175259A (en) | 1990-11-06 | 1990-11-06 | Voltage-nonlinear resistance ceramic composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04175259A true JPH04175259A (en) | 1992-06-23 |
Family
ID=17903273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2301966A Pending JPH04175259A (en) | 1990-11-06 | 1990-11-06 | Voltage-nonlinear resistance ceramic composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04175259A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5910761A (en) * | 1996-04-23 | 1999-06-08 | Mitsubishi Denki Kabushiki Kaisha | Voltage-dependent non-linear resistor member, method for producing the same and arrester |
| CN113979740A (en) * | 2021-10-11 | 2022-01-28 | 平高集团有限公司 | Pressure-sensitive ceramic additive, pressure-sensitive ceramic material, pressure-sensitive ceramic and preparation method thereof, pressure-sensitive resistor and preparation method thereof, and resistor element |
-
1990
- 1990-11-06 JP JP2301966A patent/JPH04175259A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5910761A (en) * | 1996-04-23 | 1999-06-08 | Mitsubishi Denki Kabushiki Kaisha | Voltage-dependent non-linear resistor member, method for producing the same and arrester |
| US6011459A (en) * | 1996-04-23 | 2000-01-04 | Mitsubishi Denki Kabushiki Kaisha | Voltage-dependent non-linear resistor member, method for producing the same and arrester |
| CN113979740A (en) * | 2021-10-11 | 2022-01-28 | 平高集团有限公司 | Pressure-sensitive ceramic additive, pressure-sensitive ceramic material, pressure-sensitive ceramic and preparation method thereof, pressure-sensitive resistor and preparation method thereof, and resistor element |
| CN113979740B (en) * | 2021-10-11 | 2023-12-15 | 平高集团有限公司 | Pressure-sensitive ceramic additive, pressure-sensitive ceramic material, pressure-sensitive ceramic and preparation method thereof, piezoresistor and preparation method thereof, and resistor element |
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