JPH04167214A - Magnetoresistance effect type magnetic head - Google Patents
Magnetoresistance effect type magnetic headInfo
- Publication number
- JPH04167214A JPH04167214A JP29259890A JP29259890A JPH04167214A JP H04167214 A JPH04167214 A JP H04167214A JP 29259890 A JP29259890 A JP 29259890A JP 29259890 A JP29259890 A JP 29259890A JP H04167214 A JPH04167214 A JP H04167214A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- metal thin
- ferromagnetic metal
- magnetic head
- thin films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 102
- 230000000694 effects Effects 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 64
- 239000002184 metal Substances 0.000 claims abstract description 64
- 239000010409 thin film Substances 0.000 claims abstract description 55
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 33
- 238000009792 diffusion process Methods 0.000 claims abstract description 24
- 239000010408 film Substances 0.000 claims abstract description 20
- 230000002265 prevention Effects 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 8
- 230000003449 preventive effect Effects 0.000 abstract 2
- 230000006866 deterioration Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 230000005415 magnetization Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000005330 Barkhausen effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005381 magnetic domain Effects 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 230000035807 sensation Effects 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- 235000016623 Fragaria vesca Nutrition 0.000 description 1
- 240000009088 Fragaria x ananassa Species 0.000 description 1
- 235000011363 Fragaria x ananassa Nutrition 0.000 description 1
- 235000002156 Lilium lancifolium Nutrition 0.000 description 1
- 244000210789 Lilium lancifolium Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 101100514733 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) mri-1 gene Proteins 0.000 description 1
- 229910003266 NiCo Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、磁気抵抗効果型磁気ヘッドに関わる。[Detailed description of the invention] [Industrial application field] The present invention relates to a magnetoresistive magnetic head.
［発明の概要］
本発明は少くとも一方が磁気抵抗効果を有する第１及び
第２の強磁性金属薄膜が非磁性絶縁中間層を介して積層
された積層型構成をとる感磁部よりなる磁気抵抗効果型
磁気ヘッドにおいて、この感磁部上にその両端部を除く
両側端面上を含んで拡散防止層を形成し、この感磁部の
両端においてそれぞれ電極を感磁部のその第１及び第２
の強磁性金属薄膜の端面から感磁部上面の一部に跨って
連接するようにして電極と強磁性金属薄膜との接触によ
る磁気的特性の劣化を回避して安定して優れた磁気的特
性を有し信転性に優れた磁気抵抗効果型磁気ヘッドを構
成する。[Summary of the Invention] The present invention provides a magnetic sensing part that has a laminated structure in which first and second ferromagnetic metal thin films, at least one of which has a magnetoresistive effect, are laminated with a nonmagnetic insulating intermediate layer interposed therebetween. In a resistive effect type magnetic head, a diffusion prevention layer is formed on the magnetically sensitive section including both end surfaces excluding both ends thereof, and electrodes are connected to the first and second electrodes at both ends of the magnetically sensitive section. 2
The ferromagnetic metal thin film is connected from the end face to a part of the top surface of the magnetically sensitive part to avoid deterioration of magnetic properties due to contact between the electrode and the ferromagnetic metal thin film, thereby achieving stable and excellent magnetic properties. This constitutes a magnetoresistive magnetic head with excellent reliability.
磁気抵抗効果型磁気ヘッド（以下ＭＲ型磁気という）に
おいて、その磁気抵抗効果を有する感磁部（以下ＭＲ感
磁部という）が非磁性絶縁中間層を介して積層された磁
気抵抗効果（以下ＭＲ効果という）を有する２枚の強磁
性薄膜或いは一方がＭＲ効果を有する２枚の強磁性薄膜
の積層体によって構成し、両画膜に同一方向のセンス電
流を通するようにしたＭＲ型磁気ヘッドが例えば特開昭
６１−１８２６２０号公報及び特開昭６２−５２７１１
号公報に開示されている。このような構成によるＭＲ型
磁気ヘッドにおいては、その感磁部が、非磁性中間層の
介在によって静磁的に結合された磁気抵抗薄膜の積層に
よって、各磁性薄膜において同一方向のセンス電流によ
って互いに反平行の磁化が発生するようになされて、全
体として単磁区構成となり、磁壁の発生が回避されてバ
ルクハウゼンノイズの発生が抑制されるようになされて
いる。In a magnetoresistive magnetic head (hereinafter referred to as MR type magnetic head), a magnetic sensing part (hereinafter referred to as MR magnetic sensing part) having a magnetoresistive effect is laminated with a non-magnetic insulating intermediate layer interposed therebetween. An MR type magnetic head is composed of two ferromagnetic thin films having an MR effect or a laminate of two ferromagnetic thin films, one of which has an MR effect, and a sense current is passed in the same direction through both films. For example, JP-A-61-182620 and JP-A-62-52711
It is disclosed in the publication No. In an MR type magnetic head having such a configuration, the magnetic sensing portion is made of a stack of magnetoresistive thin films that are magnetostatically coupled through the interposition of a nonmagnetic intermediate layer, so that each magnetic thin film is mutually connected by a sense current in the same direction. Antiparallel magnetization is generated, resulting in a single magnetic domain structure as a whole, avoiding the generation of domain walls, and suppressing the generation of Barkhausen noise.
このようなＭＲ型磁気ヘッドは、例えば第６図にその断
面図を示すように、基板（１）上にＭＲ感磁部（２）が
形成され、その両端に電極金属層（３）及び（４）が被
着されて画電極金属層（３）及び（４）間にセンス電流
ｉが通ずるようになされる。この場合、ＭＲ惑感磁（２
）の表面には、Ｓｉｎｇ、 ＳｉＮ等の表面絶縁層（１
４）が被着され、これに電極金属層（３）及び（４）を
ＭＲ感磁部（２）に被着するに供する電極コンタクト窓
（１４ａ）及び（１４ｂ）が穿設され、この絶縁層（１
４）を介してＭＲ感磁部（２）上を横切って、これに所
要のバイアス磁界を与えるバイアス導体（５）が形成さ
れる。ＭＲ感磁部（２）上には、少くともＭＲ感磁部（
２）上を含んで絶縁層（６）を介して例えば上部シール
ド磁性体（７）が被着される。（８）は磁気記録媒体と
の対接ないしは対向面で（浮上型磁気ヘッドにおいては
、スライダのＡＢＳ （エア・ベアリング・サーフエー
ス））で、感磁部（２）の前方端面がこの面（８）に臨
むようになされ、この面（８）側から磁気記録媒体上の
記録情報によって与えられる信号磁界とセンス電流ｉの
通電方向が平行関係にあるように選定され、バイアス導
体（５）にはバイアス電流がセンス電流ｉと直交する方
向に与えられてＭＲ惑感磁（２）に所要のバイアス磁界
が与えられてＭＲ感磁部（２）がその抵抗変化の直線性
及び感度に優れた部分において動作するようになされる
。In such an MR type magnetic head, for example, as shown in a cross-sectional view in FIG. 6, an MR magnetic sensing part (2) is formed on a substrate (1), and electrode metal layers (3) and 4) is deposited to allow a sense current i to pass between the picture electrode metal layers (3) and (4). In this case, MR magnetic sensation (2
) is covered with a surface insulating layer (1) of Sing, SiN, etc.
4) is deposited, and electrode contact windows (14a) and (14b) for depositing the electrode metal layers (3) and (4) on the MR magnetic sensing part (2) are bored therein. Layer (1
A bias conductor (5) is formed across the MR magnetic sensing part (2) via the conductor 4) to apply a required bias magnetic field thereto. On the MR magnetic sensing part (2), at least the MR magnetic sensing part (
2) For example, an upper shield magnetic material (7) is deposited, including above, via an insulating layer (6). (8) is the surface that faces or faces the magnetic recording medium (in a floating magnetic head, the ABS (air bearing surface) of the slider), and the front end surface of the magnetically sensitive part (2) is this surface ( 8), and the bias conductor (5) is selected so that the signal magnetic field given by the recorded information on the magnetic recording medium and the direction of conduction of the sense current i are parallel to each other from this side (8). The bias current is applied in a direction perpendicular to the sense current i, and the required bias magnetic field is applied to the MR magnetic sensing part (2), so that the MR magnetic sensing part (2) has excellent linearity and sensitivity of its resistance change. It is made to work in parts.
ＭＲ感磁部（２）は、ＭＲ効果を有する例えばパーマロ
イ（ＮｉＦｅ合金）等の第１及び第２の強磁性金属薄膜
（１１）及び（１２）が非磁性絶縁中間層（１３）を介
して積層されてなり、電極金属層（３）及び（４）は例
えばモリブデンＭｏ、タングステンＷ等の金属層によっ
て構成され、これが表面絶縁層（１４）に形成された電
極コンタクト窓（１４ａ）及び（１４ｂ）を通じてＭＲ
惑感磁（２）の両端において、両弾磁性金属薄膜（１１
）及び（１２）の双方に電気的に接続されるようにこれ
らの端面に連接するように被着される。The MR magnetic sensing part (2) includes first and second ferromagnetic metal thin films (11) and (12), such as permalloy (NiFe alloy), which have an MR effect, with a non-magnetic insulating intermediate layer (13) interposed therebetween. The electrode metal layers (3) and (4) are made of metal layers such as molybdenum Mo and tungsten W, and these electrode contact windows (14a) and (14b) are formed in the surface insulating layer (14). ) through MR
Both elastic and magnetic metal thin films (11
) and (12) so as to be connected to these end faces so as to be electrically connected to both.
この構成においてＭＲ惑感磁（２）における磁気記録媒
体からの信号磁界による抵抗変化をセンス電流の通電に
よる電圧変化としてとり出して磁気記録媒体上の記録を
読み出すようになされている。In this configuration, the resistance change due to the signal magnetic field from the magnetic recording medium in the MR magnetic sensing (2) is extracted as a voltage change due to the supply of sense current, and the recording on the magnetic recording medium is read out.
上述したＭＲ型磁気ヘッドによれば、バルクハウゼンノ
イズの改善が効果的に図られるものであるが、特にその
感磁部（２）を構成する磁性薄膜としてパーマロイ等の
金属薄膜が用いられる場合、二〇感磁部（２）の形成後
におけるアニルール工程、あるいは磁気ヘッドの完成後
においての使用時における磁気ヘッドを具備する磁気ヘ
ッド装置の磁気媒体との対接等に基づく温度上昇等によ
って特性劣化を招来するという経時変化及び信軌性に問
題がある。このような特性劣化ないしは信頬性の低下は
、特にＭＲ感磁部（２）の強磁性金属薄膜と電極金属層
（３）及び（４）の金属の相互拡散に基づいて生ずる。According to the above-mentioned MR type magnetic head, Barkhausen noise can be effectively improved, but especially when a metal thin film such as permalloy is used as the magnetic thin film constituting the magnetically sensitive part (2), 20 Characteristics deteriorate due to temperature rise, etc. due to the annealing process after forming the magnetically sensitive part (2) or due to contact with the magnetic medium of the magnetic head device equipped with the magnetic head during use after completion of the magnetic head. There are problems with changes over time and reliability. Such characteristic deterioration or deterioration in reliability occurs particularly due to mutual diffusion between the ferromagnetic metal thin film of the MR magnetic sensing part (2) and the metal of the electrode metal layers (3) and (4).
この特性劣化は、特に感度向上のために、ＭＲ感磁部（
２）の幅を小さくする場合において著しくなり、問題と
なる。This characteristic deterioration is caused by the MR magnetic sensing part (
When the width of 2) is made small, this becomes noticeable and becomes a problem.
このような問題の解決をはかるものとして、本出願人に
よる特開平１−１１６９１５号公開公報に開示のＭＲヘ
ッドの提案がなされている。これは、第７図にその拡大
平面図を示し、第８図、第９図及び第１０図にそれぞれ
そのＡ−Ａ線上、Ｂ−Ｂ線上及びＣ−Ｃ線上の拡大断面
図を示すように、基板（１）上に少くとも一方が磁気抵
抗効果を有する第１及び第２の強磁性金属薄膜（１１）
及び（１２）が非磁性絶縁中間層を介して積層されたＭ
Ｒ感磁部（２）が設けられた構成をとるものであるが、
このＭＲ惑感磁（２）にｉ対の電極金属層（３）及び（
４）が感磁部（２）の特にその端面で限定的に電気的に
連結されるようＧこなされる。すなわち、感磁部（２）
の上層の第２の強磁性金属薄膜（１２）上に第１及び第
２の強磁性金属薄膜（１１）及び（１２）と同パターン
をもって例えば数召人の厚さを有するＡＩｔｏ、ｓ 薄
膜による拡散防止膜（１５）が被着されてなり、これの
上にＳｉｎｇ、 ＳｉＮ等の表面絶縁層（１４）が被着
されて、これのＭＲ感磁部（２）の前方及び後方両端に
電極コンタクト用窓（１４ａ）及び（１４ｂ）が穿設さ
れて電極金属層（３）及び（４）がＭＲ感磁部（２）の
第１及び第２の強磁性金属薄膜（１１）及び（１２）の
端面すなわちこれら薄膜（１１）及び（１２）の厚さ方
向の側端縁においてのみ直接的に連接するようになされ
て電気的に連結するようになされる。つまりこの構成で
はＭＲ感磁部（２）上にＡｌ’ ｚ ０３拡散防止膜（
１５）を形成するが、このＡｔ！、０゜は加工性が低く
エツチングしにくいことから数召人程度に薄く形成し、
ＭＲ感磁部（２）を形成するに際してこのパターンエツ
チングと同時に、すなわち例えば全面的に形成したＭＨ
Ｉ膜の積層体上にＡ７！、Ｏ３薄膜を全面的に形成して
これを含んで各薄膜（１５） −（１２） −（１３）
−（１１）にわたって全体的に目的とするパターンと
して拡散防止膜（１５）が上面に形成されたＭＲ感磁部
（２）を形成するものである。In order to solve these problems, the present applicant has proposed an MR head disclosed in Japanese Unexamined Patent Publication No. 1-116915. This is shown in FIG. 7 as an enlarged plan view, and as shown in FIGS. 8, 9, and 10 as enlarged cross-sectional views on line A-A, line B-B, and line C-C. , first and second ferromagnetic metal thin films (11), at least one of which has a magnetoresistive effect, on a substrate (1);
and (12) are laminated via a nonmagnetic insulating intermediate layer.
Although it has a configuration in which an R magnetic sensing part (2) is provided,
i pairs of electrode metal layers (3) and (
4) is electrically connected to the magnetically sensitive part (2) in a limited manner, particularly at its end face. In other words, the magnetically sensitive part (2)
The upper second ferromagnetic metal thin film (12) is coated with an AIto,s thin film having the same pattern as the first and second ferromagnetic metal thin films (11) and (12), and having a thickness of, for example, several centimeters. A diffusion prevention film (15) is deposited, and a surface insulating layer (14) made of Sing, SiN, etc. is deposited on this, and electrodes are placed at both the front and rear ends of the MR magnetic sensing part (2). Contact windows (14a) and (14b) are formed so that the electrode metal layers (3) and (4) are connected to the first and second ferromagnetic metal thin films (11) and (12) of the MR magnetic sensing part (2). ), that is, the side edges in the thickness direction of these thin films (11) and (12), are directly connected to each other and electrically connected. In other words, in this configuration, an Al' z 03 diffusion prevention film (
15), but this At! , 0° has low workability and is difficult to etch, so it is formed as thin as several layers.
At the same time as this pattern etching when forming the MR magnetic sensing part (2), for example, the MH formed on the entire surface
A7! on the I film stack! , each thin film (15) - (12) - (13) including the O3 thin film is formed on the entire surface.
-(11) to form an MR magnetically sensitive part (2) having a diffusion prevention film (15) formed on its upper surface as a desired pattern.
そしてその後に比較的加工性に優れたＳｉＯ□、 Ｓｉ
Ｎ等の表面絶縁層（１４）を比較的厚く形成し、窓（１
４ａ）及び（１４ｂ）を穿設するエンチングを行う。After that, SiO□, Si
A surface insulating layer (14) made of N etc. is formed relatively thick, and a window (14) is formed.
4a) and (14b) are etched.
第７図〜第１０図において第６図と対応する部分には同
一符号を付して重複説明を省略する。In FIGS. 7 to 10, parts corresponding to those in FIG. 6 are designated by the same reference numerals, and redundant explanation will be omitted.
この構成によれば、電極金属層（３）及び（４）がｔｖ
ｌＲ惑磁部感磁）の第１及び第２の強磁性金属薄膜（１
１）及び（１２）に対して、これと同パターンに拡散防
止膜（１５）が形成されていてＭＲ感磁部（２）の端縁
の端面においてのみ相互に連接するようにしたことによ
って、感磁部（２）における主たるセンス電流１の通電
領域の大部分においては拡散防止膜（１５）が形成され
ていることによって磁気的特性の劣化が回避されるので
感磁部としての特性の劣化が効果的に回避されるように
なされている。According to this configuration, the electrode metal layers (3) and (4) are tv
The first and second ferromagnetic metal thin films (1
In contrast to 1) and (12), the diffusion prevention film (15) is formed in the same pattern as this and is connected to each other only at the end face of the edge of the MR magnetically sensitive part (2). A diffusion prevention film (15) is formed in most of the current-carrying area of the main sense current 1 in the magnetically sensitive part (2), which prevents the deterioration of the magnetic properties. is effectively avoided.
ところが、このような構成による場合、拡散防止膜（１
５）が、ＭＲ惑感磁（２）と同パターンに形成されてい
ることから、ＭＲ感磁部（２）の長手方向（センス電流
ｉの通電方向に沿う両側端面には拡散防止膜（１５）が
全く被覆されずにＳｉｎｇ、 ＳｉＮ等の表面絶縁層（
１４）のみによって被覆されていて、これら５ｉ０２．
ＳｉＮ等は２５０°Ｃ以上のアニールでは金属の拡散
防止が不充分となることからこれら両側端面（２ａ）及
び（２ｂ）からまわり込む拡散が特性劣化を来す。However, with such a configuration, the diffusion prevention film (1
5) is formed in the same pattern as the MR magnetic sensing part (2), therefore, a diffusion prevention film (15 ) is not coated at all and the surface insulating layer (
14) and these 5i02.
When SiN or the like is annealed at a temperature of 250° C. or higher, the prevention of metal diffusion is insufficient, so the diffusion that goes around from these side end faces (2a) and (2b) causes characteristic deterioration.
〔発明が解決しようとする課題］
本発明は、上述のＭＲ型磁気ヘッドにおいて、特性の、
安定化をはかる。[Problems to be Solved by the Invention] The present invention provides the above-mentioned MR magnetic head with the following characteristics:
Stabilize.
本発明は、第１図にその一例の路線的拡大平面を示し、
第２図、第３図及び第４図にそれぞれ第１図のＡ−Ａ線
上、Ｂ−Ｂ線上及びＣ−Ｃ線上の断面図を示すように、
基板（１）上に、少くとも一方がＭＲ効果を有する第１
及び第２の強磁性金属薄膜（１１）及び（１２）が非磁
性絶縁中間層（１３）を介して積層されたＭＲ感磁部（
２）が設けられて成るＭＲ型磁気ヘッドにおいて、ＭＲ
感磁部（２）上にその両端部を除く両側端面（２ａ）及
び（２ｂ）を含んですなわち各強磁性金属薄膜（１１）
及び（１２）の両側端面に接して拡散防止膜（１５）が
形成され、感磁部の両端においてそれぞれ電極金属層（
３）及び（４）が、それぞれ第１及び第２の強磁性金属
薄膜（１１）及び（１２）の端面と上層の強磁性金属薄
膜（１２）の上に跨って直接的に電気的に連結された構
成とする。The present invention shows an example of a linear enlarged plane in FIG.
As shown in FIG. 2, FIG. 3, and FIG. 4, sectional views on the A-A line, the B-B line, and the C-C line in FIG. 1, respectively,
on the substrate (1), at least one of which has an MR effect;
and an MR magnetically sensitive part (
In the MR type magnetic head provided with 2), the MR
Each ferromagnetic metal thin film (11) is placed on the magnetically sensitive part (2) including both end surfaces (2a) and (2b) excluding both ends thereof.
Diffusion prevention films (15) are formed in contact with both end surfaces of and (12), and electrode metal layers (15) are formed at both ends of the magnetically sensitive portion, respectively.
3) and (4) are directly electrically connected across the end surfaces of the first and second ferromagnetic metal thin films (11) and (12), respectively, and over the upper layer ferromagnetic metal thin film (12). The configuration is as follows.
上述の構成では、ＭＲ感磁部（２）に対する電極金属層
（３）及び（４）の被着を、ＭＲ惑感磁（２）の両端の
上面にも差し渡って形成したことから機械的に安定した
、したがって電気的に安定した接続を行うことができる
。In the above structure, the electrode metal layers (3) and (4) are deposited on the MR magneto-sensitive part (2) over the upper surfaces of both ends of the MR magneto-sensor (2), so that mechanical A stable and therefore electrically stable connection can be made.
また、ＭＲ惑感磁（２）の両側端面（２ａ）及び（２ｂ
）、すなわち第１及び第２の強磁性金属薄膜（１１）及
び（１２）の両側端面を含んで、つまり両薄膜（１１）
及び（１２）のゼンス電流の通電路の、実際に特性に大
きく影響する殆どの領域が拡散防止膜によって完全に被
覆されていることから、アニール処理等の加熱によって
、各強磁性薄膜（１１）及び（１２）に特性劣化を生じ
させるような金属の拡散を防止することができる。In addition, both end surfaces (2a) and (2b) of the MR magnetic sensation (2)
), that is, including both end surfaces of the first and second ferromagnetic metal thin films (11) and (12), that is, both thin films (11)
Since most of the areas of the sens current conduction paths (11) and (12), which actually greatly affect the characteristics, are completely covered with the diffusion prevention film, each ferromagnetic thin film (11) is And (12) it is possible to prevent metal diffusion that would cause characteristic deterioration.
［実施例］
本発明の一実施例を第１図〜第４図を参照して説明する
が、更にその理解を容易にするために、第５図Ａ−Ｅに
各工程における一部を断面とした斜視図を参照してその
製造方法の一例と共に説明する。[Example] An example of the present invention will be described with reference to Figs. 1 to 4. In order to further facilitate understanding, Figs. An example of the manufacturing method will be described with reference to a perspective view.
基板（１）は例えばＭｎ−Ｚｎ系フェライトあるいはＮ
ｉ−Ｚｎ系フェライト等の磁性基板より構成し得、必要
に応じてこれの上に絶縁層（図示せず）を介してＭＲ感
磁部（２）が形成される。この感磁部（２）の形成は、
第５図Ａに示すように、基板（１）上に例えば順次全面
的にＮｉＦｅ系合金よりなる第１の強磁性金属薄膜（１
１）、これの上にこの金属薄膜（１１）に対して高温処
理によっても拡散の生じない例えばＡｉｌ’ ｚ ０３
よりなる非磁性絶縁中間層（１３）、さらにこれの上に
第２の例えば同様にＮｉＦｅ系合金よりなる強磁性金属
薄膜（１２）を被着形成する。The substrate (1) is made of, for example, Mn-Zn ferrite or N
It can be constructed from a magnetic substrate such as i-Zn ferrite, and an MR magnetically sensitive section (2) is formed thereon via an insulating layer (not shown) if necessary. The formation of this magnetically sensitive part (2) is as follows:
As shown in FIG. 5A, a first ferromagnetic metal thin film (1
1), on which diffusion does not occur even when high temperature treatment is applied to this metal thin film (11), for example, Ail' z 03.
A second ferromagnetic metal thin film (12), for example, also made of a NiFe alloy, is formed on top of the nonmagnetic insulating intermediate layer (13).
その後、第２の強磁性金属薄膜（１２）−非磁性絶縁中
間層（１３）−第１の強磁性金属薄膜（１１）を例えば
フォトリソグラフィによるエツチングによって第５図Ｂ
に示すように所要のパターンのＭＲｉ１部（２）を形成
する。Thereafter, the second ferromagnetic metal thin film (12) - the non-magnetic insulating intermediate layer (13) - the first ferromagnetic metal thin film (11) are etched by, for example, photolithography, as shown in FIG.
The MRi 1 part (2) of a required pattern is formed as shown in FIG.
次に、第５図Ｃに示すように、このＭＲ感磁部（２）を
覆って全面的に例えばＵ、Ｏ，よりなる同様に高温処理
によって金属薄膜（１２）に対しての拡散を防止するこ
とができる拡散防止膜（１５）を５００Å以下、望まし
くは２００〜４００人の、これに対しエツチング加工で
きる程度の薄い厚さをもって形成し、同様に全面的に表
面絶縁層例えばＳｉ３Ｎ４等の絶縁層（１４）を必要充
分な大なる厚さに被着しないが所要のマスクを形成する
。Next, as shown in FIG. 5C, this MR magnetic sensing part (2) is covered entirely with U, O, etc., and is similarly treated at high temperature to prevent diffusion into the metal thin film (12). A diffusion prevention film (15) is formed to a thickness of 500 Å or less, preferably 200 to 400 Å, which is thin enough to be etched. The layer (14) is not applied to a sufficiently large thickness but forms the required mask.
次に、第５図りに示すように、フォトリソグラフィによ
るエツチング、例えばプラズマエツチング等によってＭ
Ｒ感磁部（２）の両端上に選択的に電極コンタクト窓（
１４ａ）及び（１４ｂ）を穿設する。Next, as shown in Figure 5, M is etched by photolithography, such as plasma etching.
Selective electrode contact windows (
14a) and (14b) are drilled.
第５図Ｅに示すように、これら電極コンタクト窓（１４
ａ）及び（１４ｂ）を通じて電極金属層（３）及び（４
）を被着形成感磁部（２）の窓（１４ａ）及び（１４ｂ
）内の特に拡散防止膜（１５）が被着されていない金属
薄膜（１１）及び（１２）の端縁の端面に連接させて形
成すると共に、さらにＭＲ感磁部（２）上を横切って、
表面絶縁層（１４）上バイアス導体（５）を形成する。As shown in FIG. 5E, these electrode contact windows (14
Electrode metal layers (3) and (4) through a) and (14b)
) are adhered to the windows (14a) and (14b) of the magnetically sensitive part (2).
) is formed so as to be connected to the end faces of the metal thin films (11) and (12) to which the diffusion prevention film (15) is not particularly adhered, and further to cross over the MR magnetically sensitive part (2). ,
A bias conductor (5) is formed on the surface insulating layer (14).
これら電極金属層（３）及び（４）とバイアス導体（５
）はそれぞれ金属を全面的に蒸着し、これをフォトリソ
グラフィによるエツチングによってパターニングして同
時に形成し得る。尚、前方の電極金属層（３）は例えば
感磁部（２）の長手方向と直交する方向に延在するよう
に形成され更にこれより後方に屈曲導出するようになさ
れる。These electrode metal layers (3) and (4) and the bias conductor (5)
) can be simultaneously formed by depositing metal over the entire surface and patterning it by etching using photolithography. Note that the front electrode metal layer (3) is formed to extend, for example, in a direction perpendicular to the longitudinal direction of the magnetically sensitive part (2), and is further bent rearward.
感磁部（２）の第１及び第２の強磁性金属薄膜（１１）
及び（１２）の厚さは数百λ程度に、非磁性絶縁中間層
（１３）の厚さは両薄膜（１１）及び（１２）間に交換
相互作用に比し静磁的結合が支配的に生ずる厚さで数百
Å以下とする。First and second ferromagnetic metal thin films (11) of magnetically sensitive part (2)
The thickness of the thin films (11) and (12) is approximately several hundred λ, and the thickness of the nonmagnetic insulating intermediate layer (13) is such that magnetostatic coupling is more dominant than exchange interaction between the thin films (11) and (12). The resulting thickness shall be several hundred angstroms or less.
そして、第１図〜第４図で示すように、少くともＭＲ惑
感磁（２）を有する部分上にＳｉＯ□等の絶縁層（６）
を介して上層のシールド磁性体（７）を被着する。As shown in FIGS. 1 to 4, an insulating layer (6) such as SiO
An upper layer of shielding magnetic material (7) is applied via the .
そして、この感磁部（２）の前方端が臨むように基板（
１）から上部シールド磁性体（７）に跨って磁気記録媒
体との対接ないしは対向面（８）を研磨する。Then, place the board (
From step 1), the surface (8) facing or facing the magnetic recording medium is polished across the upper shield magnetic body (7).
このような構成において電極金属層（３）及び（４）間
において両弾磁性金属薄膜（１１）及び（１２）に同方
向のセンス電流を通ずるものであるが、この場合感磁部
（２）の名筆１及び第２の強磁性金属薄膜（１１）及び
（１２）の磁化困難軸方向はセンス電流の通電方向に選
定され、すなわち磁気記録媒体からの信号磁界の印加方
向に形成される。そして、このような構成において電極
金属層（３）及び（４）間にセンス電流ｉを通電し、一
方バイアス導体（５）にバイアス電流を通ずることによ
って所要のバイアス磁界をＭＲ感磁部（２）に与える。In such a configuration, a sense current is passed in the same direction between the electrode metal layers (3) and (4) through both the elastic and magnetic metal thin films (11) and (12), but in this case, the sense current is passed through the magnetically sensitive part (2). The directions of the hard magnetization axes of the famous brush 1 and the second ferromagnetic metal thin films (11) and (12) are selected in the sense current direction, that is, they are formed in the direction in which the signal magnetic field from the magnetic recording medium is applied. In such a configuration, a sense current i is passed between the electrode metal layers (3) and (4), and a bias current is passed through the bias conductor (5) to apply a required bias magnetic field to the MR magnetic sensing part (2). ).
このようにすれば磁気記録媒体との対接ないしは対向面
に対接ないしは対向する磁気記録媒体からの記録に基づ
く信号磁界がＭＲ感磁部（２）にその磁化困難軸方向及
びセンス電流ｉの通電方向に与えられ、これによって電
極金属Ｎ（３）及び（４）間の抵抗変化に基づく例えば
電圧変化として電気的出力として導出される。In this way, the signal magnetic field based on the recording from the magnetic recording medium that is in contact with or opposite to the magnetic recording medium is applied to the MR magnetic sensing part (2) in the direction of the hard axis of magnetization and in the direction of the sense current i. It is applied in the current direction, and is thereby derived as an electrical output, for example, a voltage change based on a resistance change between the electrode metals N(3) and (4).
尚、上述した例においては第１及び第２の強磁性金属薄
膜（１１）及び（１２）がそれぞれＮｉＦｅより構成さ
れた場合であるが、他の磁気抵抗効果を有する例えばＮ
ｉＦｅＣｏ系合金あるいはＮｉＣｏ系合金等によって構
成することができる。In the above example, the first and second ferromagnetic metal thin films (11) and (12) are each made of NiFe, but other materials having a magnetoresistive effect, such as N
It can be made of an iFeCo alloy, a NiCo alloy, or the like.
またＭＲ感磁部（２）は、両弾磁性金属薄膜（１１）（
１２）に対してＭＲ効果を有するものによって構成する
場合に限らず一方についてはＭＲ効果がほとんどないか
全くない金属薄膜によって構成することもできる。しか
しながらいずれの場合においても両弾磁性金属薄膜（１
１）及び（１２）が非磁性絶縁中間層によって静磁的に
結合された状態でその飽和磁束密度、厚さ等の選定によ
って両薄膜（１１）及び（１２）の磁束量が一致するよ
うにしてその磁束が両薄膜（１１）及び（１２）に対し
て全体的に閉じるようにして単磁区構造として磁壁の発
生が生じないようにする。In addition, the MR magnetic sensing part (2) has a bielastic magnetic metal thin film (11) (
12) is not limited to the case where it is made of a material having an MR effect; one of the parts may be made of a metal thin film that has little or no MR effect. However, in both cases, both elastic and magnetic metal thin films (1
1) and (12) are magnetostatically coupled by a non-magnetic insulating intermediate layer, and the amount of magnetic flux of both thin films (11) and (12) is made to match by selecting the saturation magnetic flux density, thickness, etc. The magnetic flux is completely closed to both thin films (11) and (12) to form a single magnetic domain structure and prevent the generation of domain walls.
尚、上述した例は、磁性基板（１）と、上部シールド磁
性体（７）との間にＭＲ感磁部（２）が配置されたシー
ルド型ＭＲ磁気ヘッド構成とした場合であるが、この構
成に限られるものではなく、またＭＲ型磁気ヘッドの単
独の再生磁気ヘッドに限らず、例えば上下の磁性シール
ド体を磁気コアとするインダクティブ型記録ヘッドとの
複合型構成を採る場合など種々の構成によるＭＲ型磁気
ヘッドに本発明を適用することができる。Note that the above example is a case of a shield type MR magnetic head configuration in which the MR magnetic sensing part (2) is arranged between the magnetic substrate (1) and the upper shield magnetic body (7). The present invention is not limited to the configuration, and is not limited to a single reproducing magnetic head of the MR type magnetic head, but also various configurations such as a composite configuration with an inductive type recording head having upper and lower magnetic shields as the magnetic core. The present invention can be applied to an MR type magnetic head according to the present invention.
上述したように、本発明の構成では、ＭＲ感磁部（２）
に対する電極金属層（３）及び（４）の被着を、ＭＲ感
磁部（２）の両端の上面にも差し渡って形成したことか
ら機械的に安定した、したがって電気的に安定した接続
を行うことができる。As described above, in the configuration of the present invention, the MR magnetic sensing section (2)
Since the electrode metal layers (3) and (4) are deposited over the upper surface of both ends of the MR magnetic sensing part (2), a mechanically stable and therefore electrically stable connection is achieved. It can be carried out.
また、ＭＲ感磁部（２）の両側端面（２ａ）及び（２ｂ
）、すなわち第１及び第２の強磁性金属薄膜（１１）及
び（１２）の両側端面を含んで、つまり両薄膜（１１）
及び（１２）のセンス電流の通電路の、実際に特性に大
きく影響する殆どの領域が拡散防止膜によって完全に被
着されていることから、磁気特性の向上の為の２５０°
Ｃを越えるアニールを行っても、このアニール処理等の
加熱によって各強磁性薄膜（１１）及び（１２）に逆に
特性劣化を生じさせるような金属の拡散を防止すること
ができる。In addition, both end surfaces (2a) and (2b) of the MR magnetic sensing part (2)
), that is, including both end surfaces of the first and second ferromagnetic metal thin films (11) and (12), that is, both thin films (11)
And (12), since most of the areas of the sense current conduction path that actually greatly affect the characteristics are completely covered with the diffusion prevention film, the 250° angle for improving the magnetic characteristics is
Even if annealing exceeding C is performed, it is possible to prevent diffusion of metal that would otherwise cause characteristic deterioration in each ferromagnetic thin film (11) and (12) due to heating such as this annealing treatment.
したがって本発明によれば、経時変化が小さく、安定性
、信顛性の高いＭＲ型磁気ヘッドを得ることができる。Therefore, according to the present invention, it is possible to obtain an MR type magnetic head that exhibits little change over time and is highly stable and reliable.
第１図は本発明による磁気ヘッドの一例の路線的拡大平
面図、第２図、第３図及び第４図は第１のＡ−Ａ線、Ｂ
−Ｂ線及びＣ−Ｃ！ｉ上の拡大断面図、第５図Ａ−Ｅは
本発明による磁気ヘッドの感磁部の製造工程図、第６図
は従来構造の磁気ヘッドの断面図、第７図は従来の磁気
ヘッドの平面図、第８図、第９図及び第１０図はそれぞ
れ第７図のＡ−Ａ線、Ｂ−Ｂ線及びＣ−Ｃ線上の断面図
である。
（１）は基板、（２）はＭＲ感磁部、（３）及び（４）
は電極金属層、（１１）及び（１２）は第１及び第２の
強磁性金属薄膜、（１３）は非磁性絶縁中間層、（１４
）は表面絶縁層、（１５）は拡散防止膜である。
１２俤２の強苺釦碕謄傅賦
１４ａ、１４ｂ 鬼由艷りンタク鴫
５ バイアス眞ルト
７ンールド〃孔ｌ−封か
８ 属、Ｉ依（銀山れと、７１交丁お参なべ（コ吹ゴ
臼Ｙ鎖第６図FIG. 1 is an enlarged plan view of an example of the magnetic head according to the present invention, and FIGS. 2, 3, and 4 are the first A-A line, B
-B line and C-C! 5A-5E are manufacturing process diagrams of the magnetic sensing part of the magnetic head according to the present invention, FIG. 6 is a sectional view of a magnetic head with a conventional structure, and FIG. 7 is a diagram of a conventional magnetic head. The plan view, FIG. 8, FIG. 9, and FIG. 10 are sectional views taken along the lines AA, BB, and C-C in FIG. 7, respectively. (1) is the substrate, (2) is the MR magnetic sensing part, (3) and (4)
is an electrode metal layer, (11) and (12) are first and second ferromagnetic metal thin films, (13) is a nonmagnetic insulating intermediate layer, (14)
) is a surface insulating layer, and (15) is a diffusion prevention film. 12 yen 2 strong strawberry buttons 14a, 14b Oniyuri rin ntaku 5 bias slant 7 turns 1 hole l - seal 8 Fukigosu Y chain diagram 6
Claims (1)
及び第２の強磁性金属薄膜が非磁性絶縁中間層を介して
積層された感磁部が設けられて成る磁気抵抗効果型磁気
ヘッドにおいて、 上記感磁部上にその両端部を除く両側端面上を含んで拡
散防止膜が形成され、上記感磁部の両端においてそれぞ
れ電極金属層が、それぞれ上記第１及び第２の強磁性金
属薄膜の端面と上層の強磁性金属薄膜上に跨って直接的
に電気的に連結されてなることを特徴とする磁気抵抗効
果型磁気ヘッド。[Claims] On the substrate, at least one side has a magnetoresistive effect.
and a magnetoresistive magnetic head comprising a magnetically sensitive part in which a second ferromagnetic metal thin film is laminated with a non-magnetic insulating intermediate layer interposed therebetween, wherein a magnetoresistive part is provided on the magnetically sensitive part on both end surfaces excluding both ends of the magnetically sensitive part. A diffusion prevention film is formed, and electrode metal layers are formed directly on both ends of the magnetically sensitive part, spanning over the end surfaces of the first and second ferromagnetic metal thin films and the upper ferromagnetic metal thin film, respectively. A magnetoresistive magnetic head, characterized in that it is electrically connected to a magnetoresistive head.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29259890A JPH04167214A (en) | 1990-10-30 | 1990-10-30 | Magnetoresistance effect type magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29259890A JPH04167214A (en) | 1990-10-30 | 1990-10-30 | Magnetoresistance effect type magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04167214A true JPH04167214A (en) | 1992-06-15 |
Family
ID=17783861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29259890A Pending JPH04167214A (en) | 1990-10-30 | 1990-10-30 | Magnetoresistance effect type magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04167214A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6088195A (en) * | 1996-03-28 | 2000-07-11 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
-
1990
- 1990-10-30 JP JP29259890A patent/JPH04167214A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6088195A (en) * | 1996-03-28 | 2000-07-11 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
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