JPH04163951A - Resin sealed semiconductor device - Google Patents
Resin sealed semiconductor deviceInfo
- Publication number
- JPH04163951A JPH04163951A JP29121290A JP29121290A JPH04163951A JP H04163951 A JPH04163951 A JP H04163951A JP 29121290 A JP29121290 A JP 29121290A JP 29121290 A JP29121290 A JP 29121290A JP H04163951 A JPH04163951 A JP H04163951A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- lead frame
- semiconductor device
- photosensitive resin
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011347 resin Substances 0.000 title claims abstract description 61
- 229920005989 resin Polymers 0.000 title claims abstract description 61
- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 238000007789 sealing Methods 0.000 abstract description 21
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000003822 epoxy resin Substances 0.000 abstract description 3
- 229920000647 polyepoxide Polymers 0.000 abstract description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052709 silver Inorganic materials 0.000 abstract description 2
- 239000004332 silver Substances 0.000 abstract description 2
- 230000008642 heat stress Effects 0.000 abstract 2
- 238000000926 separation method Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 20
- 238000000059 patterning Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920002454 poly(glycidyl methacrylate) polymer Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical group CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- ILBBNQMSDGAAPF-UHFFFAOYSA-N 1-(6-hydroxy-6-methylcyclohexa-2,4-dien-1-yl)propan-1-one Chemical compound CCC(=O)C1C=CC=CC1(C)O ILBBNQMSDGAAPF-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- OYUNTGBISCIYPW-UHFFFAOYSA-N 2-chloroprop-2-enenitrile Chemical compound ClC(=C)C#N OYUNTGBISCIYPW-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229940114081 cinnamate Drugs 0.000 description 1
- HNEGQIOMVPPMNR-IHWYPQMZSA-N citraconic acid Chemical compound OC(=O)C(/C)=C\C(O)=O HNEGQIOMVPPMNR-IHWYPQMZSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- WBYWAXJHAXSJNI-VOTSOKGWSA-M trans-cinnamate Chemical compound [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、半導体素子を有し、樹脂封止により封止が行
われる樹脂封止型半導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a resin-sealed semiconductor device that has a semiconductor element and is encapsulated with resin.
［従来の技術］
半導体装置は、半導体素子の固定、外界からの保護、外
部への電気的引き出し、半導体素子の放熱といったこと
を行うためにパッケージに封入されて使用される。[Prior Art] Semiconductor devices are used while being sealed in a package in order to fix the semiconductor element, protect it from the outside world, lead out electricity to the outside, and dissipate heat from the semiconductor element.
封止方法には、−数的に気密密封型と樹脂封止型の二つ
の方法がある。There are two types of sealing methods: an airtight sealing type and a resin sealing type.
気密封止型は、封止特性に優れるが、コストが高く、量
産性に難点があるので、樹脂封止型が用いられている。The hermetic sealing type has excellent sealing properties, but is expensive and has difficulties in mass production, so the resin sealing type is used.
第４図はモールドパッケージによって封止を行なった樹
脂封止型半導体装置の従来例を示す断面図である。FIG. 4 is a sectional view showing a conventional example of a resin-sealed semiconductor device sealed with a mold package.
図において、１は封止体たる樹脂、２は半導体素子たる
半導体チップ、３．３°はリードフレームであり、４は
リードフレームの一部で半導体素子を載置する部分（ア
イランド部）、５は半導体チップとリードフレーム３．
３°とを接続させるボンディングワイヤである。In the figure, 1 is a resin as a sealing body, 2 is a semiconductor chip as a semiconductor element, 3.3° is a lead frame, 4 is a part of the lead frame where the semiconductor element is placed (island part), 5 3. Semiconductor chips and lead frames.
This is a bonding wire that connects the 3°.
しかしながら、この種のパッケージは、封止用樹脂とリ
ードフレームのアイランド部裏面の界面において、使用
中封止用樹脂とアイランド部が剥離したり、封止用樹脂
にクラックが入って封止機能が阻害されるという欠点が
あった。これらを解決すべく、実公昭６２−２３０９７
号公報に開示されるように、アイランド部裏面に樹脂ボ
ッティング法をもって形成された軟質樹脂層を設ける方
法、また、特公昭６１−３１００号公報、特公昭６２−
２５９０５号公報に開示されるようにアイランド部裏面
に凹部を形成する方法がある。However, in this type of package, the sealing resin and the island part peel off during use at the interface between the sealing resin and the back side of the island part of the lead frame, or the sealing resin cracks and the sealing function is lost. It had the disadvantage of being hindered. In order to solve these problems,
As disclosed in Japanese Patent Publication No. 61-3100, a method of providing a soft resin layer formed by a resin botting method on the back surface of the island part, and Japanese Patent Publication No. 61-3100, Japanese Patent Publication No. 62-
As disclosed in Japanese Patent No. 25905, there is a method of forming a recess on the back surface of the island portion.
［発明が解決しようとする課題］
従来技術における樹脂封止型半導体装置は、以下に示す
ような欠点を有している。[Problems to be Solved by the Invention] Resin-sealed semiconductor devices in the prior art have the following drawbacks.
アイランド部裏面に樹脂ボッティング法で形成した軟質
樹脂層を設ける方法では、半導体素子の載置されるアイ
ランド部の裏面に、ボッティングで軟質樹脂を滴下する
ため、軟質樹脂が半導体素子の載置されるべき場所にま
でまわりこみ、半導体素子とリードフレームとの接着を
阻害する要因となる。In the method of providing a soft resin layer formed by the resin botting method on the back surface of the island section, the soft resin is dropped by botting onto the back surface of the island section on which the semiconductor element is placed, so that the soft resin does not interfere with the placement of the semiconductor element. The lead frame can get into the place where it is supposed to be, and become a factor that inhibits the adhesion between the semiconductor element and the lead frame.
また、アイランド部裏面に凹部を設ける方法では、凹部
を設ける方法として、たとえばハーフエツチング、プレ
ス、放電加工法等の装置を用いることで、工程が繁雑に
なり、かつ、コストが高くなる。Furthermore, in the method of forming the recess on the back surface of the island portion, the process becomes complicated and the cost becomes high because a device such as half etching, pressing, or electric discharge machining is used to form the recess.
本発明の目的は、上記問題点を解決し、高品質、高信頼
性で安価な樹脂封止型半導体装置を提供することにある
。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and provide a high quality, highly reliable, and inexpensive resin-sealed semiconductor device.
［課題を解決するための手段］
本発明による樹脂封止型半導体装置は、リードフレーム
に載置された半導体素子を樹脂封止した樹脂封止型半導
体装置において、該リードフレームの半導体素子載置部
の裏面に、感光性樹脂をパターニングすることで、該感
光性樹脂による凸部のパターンを有する樹脂膜を形成し
たことを特徴とする。[Means for Solving the Problems] A resin-sealed semiconductor device according to the present invention is a resin-sealed semiconductor device in which a semiconductor element mounted on a lead frame is sealed with a resin. A resin film having a pattern of convex portions made of the photosensitive resin is formed on the back surface of the portion by patterning a photosensitive resin.
［作用］
本発明によれば、リードフレームに載置された半導体素
子を樹脂封止した樹脂封止型半導体装置において、該リ
ードフレームのアイランド部の裏面に感光性樹脂をパタ
ーン形成部し、該感光性樹脂による凸部のパターンを有
する樹脂膜を形成することにより、簡便な方法で安価な
樹脂封止型半導体を提供することができ、かつ、封止用
樹脂とアイランド部の裏面の密着性が向上した高信頼性
の樹脂封止型半導体装置を提供することができる。[Function] According to the present invention, in a resin-sealed semiconductor device in which a semiconductor element mounted on a lead frame is resin-sealed, a photosensitive resin is patterned on the back surface of the island portion of the lead frame, and By forming a resin film with a pattern of convex portions using a photosensitive resin, it is possible to provide a resin-sealed semiconductor at a low cost using a simple method, and to improve the adhesion between the sealing resin and the back surface of the island portion. A highly reliable resin-sealed semiconductor device with improved performance can be provided.
以下本発明を図面により説明する。The present invention will be explained below with reference to the drawings.
第１図は、本発明による半導体装置の断面図、第２図は
第１図の半導体装置に用いたリードフレームの平面図を
示す。FIG. 1 is a sectional view of a semiconductor device according to the present invention, and FIG. 2 is a plan view of a lead frame used in the semiconductor device of FIG.
リードフレームのアイランド部４の裏面に感光性樹脂た
とえばネガ型フォトレジスト等を塗布等の方法により積
層する。この時アイランド部４の表面及び他の場所に塗
布されても良い。A photosensitive resin such as a negative type photoresist is laminated on the back surface of the island portion 4 of the lead frame by a method such as coating. At this time, it may be applied to the surface of the island portion 4 and other locations.
感光性樹脂の材料としては、リードフレームのアイラン
ド部４および封止用樹脂１との密着性の良い樹脂が適宜
選択され、一般にはレジスト材料であり、ポジ型よりも
ネガ型が好ましく、たとえば環状ゴム系、ポリ桂皮酸ビ
ニル系、ポリグリシジルメタクリレート、ポリグリシジ
ルメタクリレート−Ｃｏ−エチルアクリレート、ポリグ
リシジルメタクリレートのメチルマレイン酸添加物、ク
ロルメチル化ポリスチレン、ポリジアリールオルソフタ
レート、エポキシ化ポリブタジェン、ポリエチルアクリ
レート−Ｃｏ−αクロロアクリロニトリル、ポリスチレ
ン−テトラチオフルバレン系、ポリメチルメタクリレー
ト・アクリル酸系等のレジスト材料を挙げることができ
、特に好ましくは、耐湿性にもすぐれる感光性ポリアミ
ノ系樹脂、たとえば、感光性基をその分子内に持つ芳香
族系のポリアミド樹脂およびポリイミド樹脂等が挙げら
れる。As the material of the photosensitive resin, a resin that has good adhesion to the island portion 4 of the lead frame and the sealing resin 1 is appropriately selected, and is generally a resist material, and is preferably a negative type than a positive type. Rubber-based, polyvinyl cinnamate-based, polyglycidyl methacrylate, polyglycidyl methacrylate-Co-ethyl acrylate, methylmaleic acid additive of polyglycidyl methacrylate, chloromethylated polystyrene, polydiaryl orthophthalate, epoxidized polybutadiene, polyethyl acrylate-Co - Resist materials such as α-chloroacrylonitrile, polystyrene-tetrathiofulvalene, and polymethyl methacrylate/acrylic acid may be mentioned, and particularly preferred are photosensitive polyamino resins with excellent moisture resistance, such as photosensitive Examples include aromatic polyamide resins and polyimide resins having groups in their molecules.
感光性樹脂膜の形成手段としては、デイツプ、スピンナ
ー、ロールコータ−等の塗布装置が挙げられるが、感光
性樹脂膜をリードフレーム上に形成できる手段であれば
何でもよい。Examples of means for forming the photosensitive resin film include coating devices such as a dip, spinner, and roll coater, but any means that can form the photosensitive resin film on the lead frame may be used.
また、感光性樹脂膜の厚さとしては、０．５〜２０μｍ
程度が好ましく、１〜５μｍ程度がより好ましい。In addition, the thickness of the photosensitive resin film is 0.5 to 20 μm.
The thickness is preferably about 1 to 5 μm, more preferably about 1 to 5 μm.
次いで、感光性樹脂膜を光硬化するのに必要な露光量で
、アイランド部４の裏面のパターン形成部のみが光透過
するフォトマスクを介して露光、現像することで、アイ
ランド部４の裏面のみに感光性樹脂膜をパターニングす
ることができる。この時使用するパターンマスクの開口
部に濃度勾配をつけることにより、感光性樹脂膜をレン
ズ状の凸形状にすることも可能である。Next, only the back surface of the island section 4 is exposed and developed through a photomask through which only the pattern formation section on the back surface of the island section 4 transmits light at an exposure amount necessary to photocure the photosensitive resin film. It is possible to pattern a photosensitive resin film. By creating a concentration gradient in the openings of the patterned mask used at this time, it is also possible to form the photosensitive resin film into a lens-like convex shape.
しかる後、熱硬化を行い、アイランド部４の裏面のみに
凸形状のパターンを有する感光性樹脂膜６が形成される
。Thereafter, thermal curing is performed to form a photosensitive resin film 6 having a convex pattern only on the back surface of the island portion 4.
この第２図に示すリードフレーム３，３°を用い、アイ
ランド部４の表面に半導体素子２をダイボンディングし
、半導体素子２の電極とリードフレーム３．３°を、ボ
ンディングワイヤー５によりワイヤーボンディングする
。Using the lead frame 3.3° shown in FIG. 2, the semiconductor element 2 is die-bonded to the surface of the island portion 4, and the electrode of the semiconductor element 2 and the lead frame 3.3° are wire-bonded using the bonding wire 5. .
そして、リードフレーム３，３゛の中央部を封止用樹脂
１で封止することにより、第１図に示した樹脂封止型半
導体装置を得ることができる。Then, by sealing the center portions of the lead frames 3, 3' with the sealing resin 1, the resin-sealed semiconductor device shown in FIG. 1 can be obtained.
封止に用いられる樹脂としては、半導体装置の封入に用
いられる樹脂の中から適宜選択され、たとえばエポキシ
樹脂、シリコン樹脂、フェノール樹脂、ポリイミド樹脂
等が挙げられる。The resin used for sealing is appropriately selected from resins used for encapsulating semiconductor devices, and includes, for example, epoxy resin, silicone resin, phenol resin, polyimide resin, and the like.
また、樹脂の封止方法としては、キャスティング法、イ
ンジェクション法、ボッティング法等が挙げられるが、
好ましくはトランファーモールディング法が挙げられる
。In addition, resin sealing methods include casting method, injection method, botting method, etc.
Preferably, a transfer molding method is used.
［実施例］
（実施例１）
リードフレームのアイランド部４の裏面に感光性樹脂（
商品名： ＰＡ−１０００Ｃ１宇部興産社製）をスピン
ナー法により、３μｍの膜厚に塗布した。[Example] (Example 1) A photosensitive resin (
Product name: PA-1000C1 (manufactured by Ube Industries, Ltd.) was applied to a thickness of 3 μm using a spinner method.
次に、８０℃、３０分間のブリベータを行った後、第２
図に示すパターン形状に対応したパターンマスクを介し
て、高圧水銀灯を用いてＰＡ−１０００Ｃの光硬化に必
要な露光量で露光した。Next, after performing a bleeder at 80°C for 30 minutes, the second
Through a pattern mask corresponding to the pattern shape shown in the figure, exposure was performed using a high-pressure mercury lamp at an exposure amount necessary for photocuring PA-1000C.
露光終了後、該感光性樹脂膜を溶解する専用現像液（Ｎ
−メチル−２−ピロリドンを主成分とする現像？ｌ！Ｌ
）にて現像し、専用リンス液（１，１，１トリクロロ
エタンを主成分とするリンス液）で処理した後、１５０
℃、３０分間のポストベークを行い、第２図に示すよう
な凸部のパターン形状を有した感光性樹脂膜６を形成し
た。After exposure, a special developer (N
-Development based on methyl-2-pyrrolidone? l! L
) and treated with a special rinse solution (rinsing solution whose main component is 1,1,1 trichloroethane).
℃ for 30 minutes to form a photosensitive resin film 6 having a pattern of convex portions as shown in FIG.
得られたリードフレームのアイランド部４に銀ペースト
を用い半導体素子２をダイボンディングし、リードフレ
ーム３．３° と半導体素子２の電極を金ワイヤ−５で
ワイヤーボンディングを行フた後、トランスファーモー
ルディング法によりエポキシ樹脂１で封止した。The semiconductor element 2 is die-bonded to the island portion 4 of the obtained lead frame using silver paste, and the electrodes of the lead frame 3.3° and the semiconductor element 2 are wire-bonded with gold wire 5, and then transfer molding is performed. It was sealed with epoxy resin 1 by the method.
得られた樹脂封止型半導体装置は、半導体装置の作成工
程中および装置実装時における温度変化や熱ストレスの
印加時に、半導体素子とリードフレームの剥れや、アイ
ランド部裏面の封止用樹脂のクランクや剥れ等の発生は
無かった。The resulting resin-sealed semiconductor device has problems such as peeling of the semiconductor element and lead frame, and damage to the sealing resin on the backside of the island portion during the manufacturing process of the semiconductor device and during the application of thermal stress or temperature changes during device mounting. There were no occurrences of cranking or peeling.
また、アイランド部裏面に感光性樹脂をパターニングす
るという簡便な方法を用いたために安価な半導体装置が
得られた。Furthermore, since a simple method of patterning the photosensitive resin on the back surface of the island portion was used, an inexpensive semiconductor device was obtained.
（実施例２）
感光性樹脂として感光性ポリイミド（商品名セミコファ
イン、東し社製）を用い、第３図に示すような凸部のパ
ターンを有するリードフレーム３．３″を作成し、実施
例１と同様の工程により樹脂封止型半導体装置を作成し
た。(Example 2) Using photosensitive polyimide (trade name Semicofine, manufactured by Toshisha Co., Ltd.) as a photosensitive resin, a lead frame 3.3'' having a pattern of convex portions as shown in Fig. 3 was created and carried out. A resin-sealed semiconductor device was produced using the same steps as in Example 1.
得られた樹脂封止型半導体装置は、半導体装置の作成工
程中および装置実装時における温度変化や熱ストレスの
印加時に、半導体素子とリードフレームの剥れや、アイ
ランド部裏面の封止用樹脂のクラックや剥れ等の発生は
無かった。The resulting resin-sealed semiconductor device has problems such as peeling of the semiconductor element and lead frame, and damage to the sealing resin on the backside of the island portion during the manufacturing process of the semiconductor device and during the application of thermal stress or temperature changes during device mounting. There were no occurrences of cracks or peeling.
また、アイランド部裏面に感光性樹脂をパター鼠ングす
るという簡便な方法を用いたために安価な半導体装置が
得られた。Furthermore, since a simple method of patterning a photosensitive resin on the back surface of the island portion was used, an inexpensive semiconductor device was obtained.
［発明の効果］
本発明によれば、リードフレームのアイランド部の裏面
に感光性樹脂をパターニングし、感光性樹脂による凸部
のパターンを有する樹脂膜を形成することにより、以下
のような効果が得られた。[Effects of the Invention] According to the present invention, the following effects can be achieved by patterning a photosensitive resin on the back surface of the island portion of the lead frame and forming a resin film having a pattern of convex portions made of the photosensitive resin. Obtained.
アイランド部の裏面と封止用樹脂の密着力が向上し、さ
らにアイランド部の裏面以外には感光性樹脂が形成され
ないので、
（１）半導体装置作成工程中、および装置実装時などに
おける温度変化や、熱ストレスの印加時にも、クランク
や剥れの発生が無くなり、半導体装置の品質と信頼性が
向上した。The adhesion between the back surface of the island portion and the encapsulating resin is improved, and the photosensitive resin is not formed on any surface other than the back surface of the island portion. Even when thermal stress is applied, no cracking or peeling occurs, improving the quality and reliability of semiconductor devices.
（２）半導体素子とリードフレームの剥れが無くなり、
半導体装置の品質と信頼性が向上した。(2) No more peeling between the semiconductor element and lead frame.
The quality and reliability of semiconductor devices improved.
また、アイランド裏面に感光性樹脂のパターニングで凸
部を形成することにより、
（３）工程が簡便なため、コストダウンが可能となフた
。In addition, by forming convex portions on the back surface of the island by patterning photosensitive resin, (3) the process is simple and costs can be reduced.
以上説明したように、本発明によれば、高品質、高信頼
性で安価な樹脂封止型半導体装置を提供することができ
る。As described above, according to the present invention, it is possible to provide a high quality, highly reliable, and inexpensive resin-sealed semiconductor device.
第１図は、本発明による樹脂封止型半導体装置の実施例
を示す断面図である。
第２図は、本発明の実施例におけるリードフレームの平
面図である。
第３図は、本発明の他の実施例におけるリードフレーム
の平面図である。
第４図は、従来技術による樹脂封止型半導体装置の断面
図である。
（符号の説明）
１・・・封止用樹脂、２・・・半導体素子、３，３°・
・・リードフレーム、４・・・アイランド部、５・・・
ボンディングワイヤー、６・・・感光性樹脂膜。
第１図
第２図
第３図 。FIG. 1 is a sectional view showing an embodiment of a resin-sealed semiconductor device according to the present invention. FIG. 2 is a plan view of a lead frame in an embodiment of the present invention. FIG. 3 is a plan view of a lead frame in another embodiment of the present invention. FIG. 4 is a sectional view of a resin-sealed semiconductor device according to the prior art. (Explanation of symbols) 1... Sealing resin, 2... Semiconductor element, 3,3°.
...Lead frame, 4...Island part, 5...
Bonding wire, 6... photosensitive resin film. Figure 1 Figure 2 Figure 3.
Claims (1)
た樹脂封止型半導体装置において、該リードフレームの
半導体素子載置部の裏面に、感光性樹脂をパターニング
することで、該感光性樹脂による凸部のパターンを有す
る樹脂膜を形成したことを特徴とする樹脂封止型半導体
装置。In a resin-sealed semiconductor device in which a semiconductor element mounted on a lead frame is resin-sealed, a photosensitive resin is patterned on the back surface of the semiconductor element mounting portion of the lead frame, thereby forming a protrusion caused by the photosensitive resin. 1. A resin-sealed semiconductor device characterized by forming a resin film having a pattern of 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29121290A JPH04163951A (en) | 1990-10-29 | 1990-10-29 | Resin sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29121290A JPH04163951A (en) | 1990-10-29 | 1990-10-29 | Resin sealed semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04163951A true JPH04163951A (en) | 1992-06-09 |
Family
ID=17765918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29121290A Pending JPH04163951A (en) | 1990-10-29 | 1990-10-29 | Resin sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04163951A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5864174A (en) * | 1995-10-24 | 1999-01-26 | Oki Electric Industry Co., Ltd. | Semiconductor device having a die pad structure for preventing cracks in a molding resin |
| US9076776B1 (en) * | 2009-11-19 | 2015-07-07 | Altera Corporation | Integrated circuit package with stand-off legs |
-
1990
- 1990-10-29 JP JP29121290A patent/JPH04163951A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5864174A (en) * | 1995-10-24 | 1999-01-26 | Oki Electric Industry Co., Ltd. | Semiconductor device having a die pad structure for preventing cracks in a molding resin |
| US6177725B1 (en) | 1995-10-24 | 2001-01-23 | Oki Electric Industry Co., Ltd. | Semiconductor device having an improved structure for preventing cracks, improved small-sized semiconductor and method of manufacturing the same |
| US6459145B1 (en) * | 1995-10-24 | 2002-10-01 | Oki Electric Industry Co., Ltd. | Semiconductor device having an improved structure for preventing cracks, and improved small-sized semiconductor |
| US6569755B2 (en) | 1995-10-24 | 2003-05-27 | Oki Electric Industry Co., Ltd. | Semiconductor device having an improved structure for preventing cracks, improved small sized semiconductor and method of manufacturing the same |
| US9076776B1 (en) * | 2009-11-19 | 2015-07-07 | Altera Corporation | Integrated circuit package with stand-off legs |
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