JPH0415913A - Organicmetal vapor growth method and susceptor therein used - Google Patents
Organicmetal vapor growth method and susceptor therein usedInfo
- Publication number
- JPH0415913A JPH0415913A JP11862490A JP11862490A JPH0415913A JP H0415913 A JPH0415913 A JP H0415913A JP 11862490 A JP11862490 A JP 11862490A JP 11862490 A JP11862490 A JP 11862490A JP H0415913 A JPH0415913 A JP H0415913A
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- sic
- surface roughness
- substrate
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 6
- 230000012010 growth Effects 0.000 title abstract description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 230000003746 surface roughness Effects 0.000 claims abstract description 15
- 150000001875 compounds Chemical class 0.000 claims abstract description 4
- 239000004065 semiconductor Substances 0.000 claims abstract description 4
- 239000010409 thin film Substances 0.000 claims abstract description 4
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 3
- 150000002902 organometallic compounds Chemical class 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052799 carbon Inorganic materials 0.000 abstract description 7
- 125000002524 organometallic group Chemical group 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 4
- 150000004678 hydrides Chemical class 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 229910003465 moissanite Inorganic materials 0.000 abstract 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- 238000000197 pyrolysis Methods 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 16
- 239000007789 gas Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は有機金属気相成長（Ｍｅｔａｌ Ｏｒｇａｎｉ
ｃＶａｐｏｒ Ｐｈａｓｅ Ｅｐｉｔａｘｙ、以下ＭＯ
ＶＰＥという、）法の改良とそれに用いるサセプタに関
する。Detailed Description of the Invention (Industrial Application Field) The present invention is directed to metal organic vapor phase epitaxy (Metal Organ Vapor Phase Epitaxy).
cVapor Phase Epitaxy, hereinafter referred to as MO
This paper relates to an improvement of the VPE method and the susceptor used therefor.
（従来の技術）
現在用いられているＭＯＶＰＨの反応装置としては、第
３図に示すようなバレル型構造のものがある。図中４は
反応炉であり、この上端部にはガス導入口５が、下部側
壁にはガス導入口６が設けられている。また中央部側壁
には排気ロアが設けられている。この反応炉４下端中央
部からシャフト８が反応炉４上部まで挿入されており、
この上端部にはサセプタ９が設けられている。１０はこ
のサセプタ９に取付けられた基板である。このサセプタ
９の位置する部分の反応炉４の外周にはＲＦコイル１１
が設置されている。(Prior Art) A currently used MOVPH reactor has a barrel-type structure as shown in FIG. In the figure, reference numeral 4 denotes a reactor, which has a gas inlet 5 at its upper end and a gas inlet 6 at its lower side wall. Additionally, an exhaust lower is provided on the central side wall. A shaft 8 is inserted from the center of the lower end of this reactor 4 to the upper part of the reactor 4,
A susceptor 9 is provided at this upper end. 10 is a substrate attached to this susceptor 9. An RF coil 11 is provided on the outer periphery of the reactor 4 in a portion where the susceptor 9 is located.
is installed.
上記反応装置を用いるガリウムヒ素 （ＧａＡｓ）の成長を例にとり説明を行なう。Gallium arsenide using the above reactor An explanation will be given using the growth of (GaAs) as an example.
ＧａＡｓ基板ｌ基板ｌ上プタ９上に設置されており、Ｒ
Ｆコイル１１により高周波誘導によって所定の温度（通
常６００〜７５０℃）に加熱される。原料ガスであるト
リメチルガリウム（ＴＭＧａ）及びアルシン（ＡｓＨ＊
）はキャリアガスの水素ガスと共にガス導入口５．６に
より反応炉４へ導入されＧａＡｓ基板近傍で熱分解反応
を起し、ＱａＡｓ基板へＧａＡｓを成長させる。The GaAs substrate is placed on the substrate 9, and the R
It is heated by the F coil 11 to a predetermined temperature (usually 600 to 750°C) by high frequency induction. Trimethyl gallium (TMGa) and arsine (AsH*
) is introduced into the reactor 4 through the gas inlet 5.6 together with hydrogen gas as a carrier gas, causing a thermal decomposition reaction in the vicinity of the GaAs substrate, thereby growing GaAs on the QaAs substrate.
その後、排気ロアより排気される。この際ウェハの差を
平均化する目的でサセプタは回転される。After that, it is exhausted from the exhaust lower. At this time, the susceptor is rotated in order to average out the differences between the wafers.
なお、サセプタは高純度カーボンが用いられる。さらに
カーボンからの脱ガスを防止する目的でＳｉＣでコーテ
ィングを１００〜２００μｍ行なっている。Note that high purity carbon is used for the susceptor. Further, in order to prevent degassing from carbon, a coating of 100 to 200 μm of SiC is applied.
（発明が解決しようとする課題）
上記ＧａＡＳの成長においてＧａＡｓは基板上だけでな
くサセプタ上にも成長する。サセプタ上に成長したＧａ
Ａｓは、サセプタによって１００μｍ前後の厚みで剥離
する場合と１０μ国前後の厚みで剥離する場合がある。(Problems to be Solved by the Invention) In the growth of GaAS described above, GaAs grows not only on the substrate but also on the susceptor. Ga grown on the susceptor
Depending on the susceptor, As may be peeled off to a thickness of around 100 μm, or may be peeled off to a thickness of around 10 μm.
サセプタ上に成長したＧａＡｓが剥離すると、その破片
がＧａＡｓ基板上に落下し、表面欠陥の原因となる。４
０回程度成長を行ったのちに剥離が開始する場合、これ
をメンテナンスの目安としても生産性の低下とはならな
いが、４程度度での成長で剥離が開始した場合、生産性
に問題を生ずる。When the GaAs grown on the susceptor peels off, its fragments fall onto the GaAs substrate, causing surface defects. 4
If peeling starts after about 0 growths, this will not cause a decrease in productivity even if this is used as a guideline for maintenance, but if peeling starts after about 4 growths, it will cause problems in productivity. .
また、サセプタ上のＧａＡｓの剥離が生じると、浮き上
がったＧａＡｓ膜とサセプタとの隙間にはいり込んだ空
気などのパージ効率が悪化し、そこから脱離する酸素な
どが原因となって、エビウェハの電気特性不良、表面不
良を生じる。In addition, when the GaAs on the susceptor peels off, the purge efficiency of air that has entered the gap between the lifted GaAs film and the susceptor deteriorates, and the oxygen released from there causes the electricity Causes poor characteristics and surface defects.
本発明は上記従来技術の問題点に鑑みなされたものであ
り、ＧａＡｓ結晶の剥離の起こりにくい有機金属気相成
長法及びそれに用いるサセプタを提供する目的でなされ
たものである。The present invention has been made in view of the problems of the prior art described above, and has been made for the purpose of providing an organometallic vapor phase epitaxy method in which peeling of GaAs crystals is less likely to occur, and a susceptor for use therein.
（課題を解決するための手段）
本発明者らは上記従来技術の問題点に鑑み種々検討を加
えたところ、炭化ケイ素（ＳｉＣ）の粗さの違いにより
ＧａＡｓ結晶のサセプタからの剥離性が違ってくること
を見出し、この知見に基づいて本発明を完成するに至っ
た。(Means for Solving the Problems) The present inventors conducted various studies in view of the problems of the prior art described above, and found that the peelability of GaAs crystals from a susceptor differs depending on the roughness of silicon carbide (SiC). Based on this knowledge, the present invention was completed.
すなわち本発明は（１）有機金属ガス及びＶ族の水素化
物の熱分解反応により基板上にｍ−ｖ族化合物半導体の
薄膜を成長させるに当り、表面の炭化ケイ素の表面粗さ
を１０−１００μ厘としたサセプタを用いることを特徴
とする有機金属気相成長法、（２）サセプタ表面の炭化
ケイ素の表面粗さを１０〜１００μ−としたことを特徴
とする有機金属気相成長用サセプタを提供するものであ
る。That is, the present invention provides (1) when growing a thin film of an m-v group compound semiconductor on a substrate by a thermal decomposition reaction of an organometallic gas and a group V hydride, the surface roughness of silicon carbide on the surface is reduced to 10-100 μm. (2) A susceptor for organometallic vapor phase epitaxy characterized in that the surface roughness of silicon carbide on the surface of the susceptor is 10 to 100 μ-. This is what we provide.
以下図面に従って本発明をさらに詳細に説明する。第１
図は本発明に用いるサセプタの一例を示す斜視図であり
、第２図はその断面形状を示す一部拡大断面図である。The present invention will be explained in more detail below with reference to the drawings. 1st
The figure is a perspective view showing an example of a susceptor used in the present invention, and FIG. 2 is a partially enlarged cross-sectional view showing its cross-sectional shape.
図中１はサセプタであり、これはカーボン２とその表面
に設けられたＳｉＣ３よりなる。本発明ではＳｉＣの表
面粗さを１０〜１００μｍとする。これはＳｉＣ表面粗
さを１０μｍ未満とした場合にＳｉＣ表面上に成長した
ＧａＡＳ結晶とＳｉＣとの接触面積が小さく、密着性が
悪いためである。またＳｉＣの表面粗さが１１００ａを
越λろと基板とサセプタの密着性が悪（なり、この結果
基板への熱伝達が悪くなると考えられるためである。Ｓ
ｉＣの表面粗さはより好ましくは２０〜３０μ勤とする
。In the figure, 1 is a susceptor, which is made of carbon 2 and SiC 3 provided on its surface. In the present invention, the surface roughness of SiC is set to 10 to 100 μm. This is because when the SiC surface roughness is less than 10 μm, the contact area between the GaAS crystal grown on the SiC surface and SiC is small and the adhesion is poor. Furthermore, if the surface roughness of SiC exceeds 1100a, the adhesion between the substrate and susceptor becomes poor (this is thought to result in poor heat transfer to the substrate).S
The surface roughness of iC is more preferably 20 to 30 μm.
なお上記表面粗さは段差測定機で測定したＳｉＣ表面の
凹凸の最大値と最小値との差で定義する。Note that the above-mentioned surface roughness is defined as the difference between the maximum value and the minimum value of the unevenness of the SiC surface measured by a step measuring device.
またカーボン上へのＳｉＣの形成は例えばＣＶＤ法によ
り行い、ＳｉＣの膜厚は好ましくは１００〜２００１Ｊ
、ＩＩ＋とする。Further, the formation of SiC on carbon is performed, for example, by a CVD method, and the film thickness of SiC is preferably 100 to 2001 J.
, II+.
なお本発明のサセプタはＧａＡｓのみでなく例えばＡｊ
２ＧａＡｓ、ＩｎＰ、ＩｎＧａＡｓ、Ｉ ｎＧａＰ、Ｉ
ｎＧａＡｓＰ等の有機金属気相成長用に用いることがで
きる。Note that the susceptor of the present invention is not only made of GaAs but also, for example, Aj
2GaAs, InP, InGaAs, InGaP, I
It can be used for organic metal vapor phase growth of nGaAsP and the like.
また形状も第１図のものに限定するものではな〈従来の
形状等のものを使用できる。Further, the shape is not limited to that shown in FIG. 1; any conventional shape can be used.
本発明の有機金属気相成長法においては、上記のように
特定のサセプタを用いる以外は、従来の方法と全（同様
の条件で行うことができ、ｍ−Ｖ族化合物半導体薄膜を
基板上に成長させる方法全てに適用できる。The organometallic vapor phase epitaxy method of the present invention can be performed under all the same conditions as the conventional method except for using a specific susceptor as described above, and is capable of depositing an m-V group compound semiconductor thin film on a substrate. Applicable to all growing methods.
（実施例） 次に本発明を実施例に基づきさらに詳細に説明する。(Example) Next, the present invention will be explained in more detail based on examples.
上記した第１図に示すサセプタでＳｉＣの表面粗さが２
０〜３０μｍのもの、及び５μｍもしくは１２０μ履の
ものを第３図に示す装置に設置し、これにＧａＡｓ基板
（直径２インチ）を取付は原料ガスとしてトリメチルガ
リウム及びアルシン、キャリアガスとして水素ガスを用
い、ＧａＡｓを下記条件にて成長させた。In the susceptor shown in Figure 1 above, the surface roughness of SiC is 2.
0 to 30 μm and 5 μm or 120 μm shoes were installed in the apparatus shown in Figure 3, and a GaAs substrate (2 inches in diameter) was attached to it using trimethyl gallium and arsine as source gases and hydrogen gas as carrier gas. GaAs was grown under the following conditions.
（ガス流量）
全流量 １００β／ ｍ ｉ ｎＴＭ
Ｇａ １０ｃｃ／ｍ１ｎＡｓＨ＊
３００ｃｃ／ｍ１ｎ（温度）
６５０℃
（成長膜厚） ２．５〜３．０μｍ／同上記
試験により得られた結果を第１表に示す。(Gas flow rate) Total flow rate 100β/minTM
Ga 10cc/m1nAsH*
300cc/m1n (temperature)
650° C. (Growth film thickness) 2.5 to 3.0 μm/Table 1 shows the results obtained from the above test.
なおＮｏ、１２のサセプタで５回成長を行ったが、サセ
プタ上のＧａＡｓの剥離は見られなかったものの、Ｇａ
Ａｓ基板の温度低下が原因とみられる表面状態の劣化が
みられたので実験を中止第１表
（発明の効果）
本発明によれば、サセプタ上に成長した化合物半導体結
晶がはく離しに（く、これにより有機金属気相成長回数
を従来に比し著しく高めることができ、製造コストの低
減、製品歩留りの向上をはかることができる。Although growth was performed five times using No. 12 susceptor, no peeling of GaAs on the susceptor was observed;
The experiment was stopped because the surface condition of the As substrate deteriorated, which was thought to be caused by the temperature drop. As a result, the number of times of organic metal vapor phase growth can be significantly increased compared to the conventional method, and it is possible to reduce manufacturing costs and improve product yield.
第１図は本発明サセプタの斜視図、第２図はその一部断
面拡大図、第３図は本発明に用いる有機金属気相成長装
置の断面図である。
１・・・サセプタ、２・・・カーボン、３・・・５ｉＣ
１４・・９反応炉、５．６・・・ガス導入口、７・・・
排気口８・・・シャフト、９・・・サセプタ、１０・・
・基板、１１・・・ＲＦコイル
第 １
図
カーボン
ｉｃFIG. 1 is a perspective view of a susceptor of the present invention, FIG. 2 is an enlarged partial cross-sectional view thereof, and FIG. 3 is a cross-sectional view of a metal organic vapor phase growth apparatus used in the present invention. 1...Susceptor, 2...Carbon, 3...5iC
14...9 reactor, 5.6...gas inlet, 7...
Exhaust port 8...shaft, 9...susceptor, 10...
・Substrate, 11...RF coil Fig. 1 Carbon IC
Claims (2)
III−Ｖ族化合物半導体の薄膜を成長させるに当り、表
面の炭化ケイ素の表面粗さを１０〜１００μｍとしたサ
セプタを用いることを特徴とする有機金属気相成長法。(1) On the substrate due to the thermal decomposition reaction of organometallic compound gas
A metal organic vapor phase epitaxy method characterized in that a susceptor having a silicon carbide surface with a surface roughness of 10 to 100 μm is used for growing a thin film of a III-V compound semiconductor.
００μｍとしたことを特徴とする有機金属気相成長用サ
セプタ。(2) The surface roughness of silicon carbide on the susceptor surface is 10 to 1
A susceptor for organic metal vapor phase epitaxy, characterized in that the thickness is 00 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11862490A JPH0415913A (en) | 1990-05-10 | 1990-05-10 | Organicmetal vapor growth method and susceptor therein used |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11862490A JPH0415913A (en) | 1990-05-10 | 1990-05-10 | Organicmetal vapor growth method and susceptor therein used |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0415913A true JPH0415913A (en) | 1992-01-21 |
Family
ID=14741139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11862490A Pending JPH0415913A (en) | 1990-05-10 | 1990-05-10 | Organicmetal vapor growth method and susceptor therein used |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0415913A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010125918A1 (en) * | 2009-04-27 | 2010-11-04 | 旭硝子株式会社 | Semiconductor heat treatment member comprising sic film |
-
1990
- 1990-05-10 JP JP11862490A patent/JPH0415913A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010125918A1 (en) * | 2009-04-27 | 2010-11-04 | 旭硝子株式会社 | Semiconductor heat treatment member comprising sic film |
| JPWO2010125918A1 (en) * | 2009-04-27 | 2012-10-25 | 旭硝子株式会社 | Semiconductor heat treatment member having SiC coating |
| JP5585577B2 (en) * | 2009-04-27 | 2014-09-10 | 旭硝子株式会社 | Evaluation method of SiC coating for semiconductor heat treatment member |
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