JPH04156226A - Inverse connection preventing switching circuit - Google Patents

Inverse connection preventing switching circuit

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Publication number
JPH04156226A
JPH04156226A JP2278073A JP27807390A JPH04156226A JP H04156226 A JPH04156226 A JP H04156226A JP 2278073 A JP2278073 A JP 2278073A JP 27807390 A JP27807390 A JP 27807390A JP H04156226 A JPH04156226 A JP H04156226A
Authority
JP
Japan
Prior art keywords
input terminal
terminal
negative
type mos
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2278073A
Other languages
Japanese (ja)
Inventor
Shugo Mizuno
水野 修吾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON DENKI MUSEN DENSHI KK
Original Assignee
NIPPON DENKI MUSEN DENSHI KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON DENKI MUSEN DENSHI KK filed Critical NIPPON DENKI MUSEN DENSHI KK
Priority to JP2278073A priority Critical patent/JPH04156226A/en
Publication of JPH04156226A publication Critical patent/JPH04156226A/en
Pending legal-status Critical Current

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  • Electronic Switches (AREA)

Abstract

PURPOSE:To improve the reliability of an inverse connection preventing switching circuit by realizing the circuit by controlling the drain electrodes of a P-and N-type MOS transistors with a voltage obtained by dividing a voltage extracted from two photocouplers. CONSTITUTION:Even when a switch 26 is turned on by connecting a positive-pole power supply input terminal 21 to the minus side and a negative-pole power supply input terminal 22 to the plus side, transistors are left opened, since the diodes of photocouplers 11 and 12 are biased in the opposite direction. However, since the diodes 24, 25, 27, and 28 for preventing inverse voltage of the photocouplers 11 and 12 are conducted and the gates of an N-and P-type MOS transistors 34 and 33 are biased respectively to negative and positive potential against their sources, the transistors 33 and 34 are not conductive between their drains and sources and no electric power is supplied to load terminals 35 and 36.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は逆接続防止スイッチング回路に関し、特に直流
電圧の極性を逆に接続した場合には動作しない逆接続防
止スイッチング回路に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a reverse connection prevention switching circuit, and more particularly to a reverse connection prevention switching circuit that does not operate when the polarity of a DC voltage is reversed.

〔従来の技術〕[Conventional technology]

従来この種の逆接続防止スイッチング回路は、第2図に
示すように、直流電圧の電源入力端子11.12、負荷
端子13,14、リレー15、スイッチ16、ダイオー
ド17.18、により構成されている。
Conventionally, this type of reverse connection prevention switching circuit, as shown in FIG. There is.

従来例の動作は、リレー15内の駆動コイルが端子3.
−6間に接続含れており、コイルに通電されないときに
は、端子7,5間及び端子2,4間がそれぞれ接続含れ
ている。今、電源入力端子11をプラスに、電源入力端
子12をマイナスに直流電源(図示せず)を接続すると
きには、スイッチ16をオンすることにより、直流電流
は電源端子11よりダイオード17を順方向に通り。
The operation of the conventional example is such that the drive coil in the relay 15 is connected to the terminal 3.
-6, and when the coil is not energized, connections are made between terminals 7 and 5 and between terminals 2 and 4, respectively. Now, when connecting a DC power supply (not shown) to the power supply input terminal 11 as a positive terminal and the power supply input terminal 12 as a negative terminal, by turning on the switch 16, the DC current is transferred from the power supply terminal 11 to the diode 17 in the forward direction. street.

リレーエ5の端子3か6へ流れ、駆動用コイル。Flows to terminal 3 or 6 of Relay 5, driving coil.

通り、更にスイッチ16を通って電源端子121達する
。リレー15が動作すると、端子1t7:よび端子2.
8とがそれぞれ接続含れることに。
and further passes through the switch 16 to reach the power supply terminal 121. When relay 15 operates, terminals 1t7: and 2.
8 are included in each connection.

す、電源端子11と負荷端子13.および電源−子12
と負荷端子14とそれぞれ接続含れ、負(端子13.1
4間に接続含れる負荷(図示せず〕に直流電流を供給す
ることができる。
, power supply terminal 11 and load terminal 13. and power supply - child 12
and load terminal 14, respectively, including negative (terminal 13.1
DC current can be supplied to a load (not shown) connected between the two.

次に電源端子11をマイナスに、電源端子1≦をプラス
に直流電源(図示せず)を逆に接続す−ときには、ダイ
オード17が逆方向になるため、スイッチ1θをオンし
ても、リレー15の端j3.6間の駆動コイルには電流
が流れず、負荷舞子13.14間には直流電流を供給す
ることは九いので逆接続を防止できる。
Next, when the power terminal 11 is connected to the negative side and the power terminal 1≦ is connected to the positive side with a DC power source (not shown), the diode 17 is in the opposite direction, so even if the switch 1θ is turned on, the relay 15 Since no current flows through the drive coil between the ends j3 and 6, and no direct current is supplied between the load coils 13 and 14, reverse connection can be prevented.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、上述した従来の逆接続防止スイッチング
回路は、機械的接点を使用したリレー各月いているので
、接点抵抗の増大等信頼性上の欠点があった。
However, since the above-mentioned conventional reverse connection prevention switching circuit uses a relay using a mechanical contact, there are drawbacks in terms of reliability such as an increase in contact resistance.

を   本発明の目的は半導体素子を使用して逆接続防
ゝ  化スイッチング回路を実現することにより、信頼
し  性の向上をはかった回路を実現することにある。
An object of the present invention is to realize a reverse connection prevention switching circuit using semiconductor elements, thereby realizing a circuit with improved reliability.

辷  〔課題を解決するための手段〕 讃   本発明の逆接続防止スイッチング回路は、正極
町  電源入力端子と正極負荷端子との間に直列に接続
含れたP型MOSトランジスタと、負極電源入力端子と
負極負荷端子との間に直列に接続含れたN≧  型MO
8トランジスタと、前記正極電源入力端子5  と前記
負極電源入力端子との間にエミッティングダイオード側
を直列に接続した2個のフォトカプラならびにスイッチ
と、前記フォトカプラのそれ−ぞれのフォトトランジス
タ側から取り出した電圧2  を分圧する抵抗と、前記
エミッティングダイオードおよびフォトトランジスタに
逆極性の方向で並列接続含れたダイオードとを有し、前
記分圧する抵抗で生成された電圧により前記P型MOS
トランジスタおよび前記N型MO3トランジスタのド□
  レイン電極をそれぞれ制御する。
[Means for Solving the Problems] The reverse connection prevention switching circuit of the present invention comprises a P-type MOS transistor connected in series between a positive power input terminal and a positive load terminal, and a negative power input terminal. N≧ type MO connected in series between and the negative load terminal
8 transistors, two photocouplers and switches each having an emitting diode side connected in series between the positive power input terminal 5 and the negative power input terminal, and each phototransistor side of the photocoupler. It has a resistor that divides the voltage 2 taken out from the MOS transistor, and a diode that is connected in parallel with the emitter diode and the phototransistor in opposite polarity, and the voltage generated by the voltage divider resists the P-type MOS.
transistor and the gate of the N-type MO3 transistor
control the rain electrodes respectively.

〔実施例〕〔Example〕

次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の一実施例の回路図である。FIG. 1 is a circuit diagram of an embodiment of the present invention.

次に本実施例の回路接続を説明する。正極電源入力端子
21に抵抗23を介してフォトカプラ11のエミッティ
ングダイオード(端子1,2間)が順方向に接続含れ、
更にフォトカプラ12のエミッティングダイオード(端
子1.2間)が同じく順方向に接続含れ、スイッチ26
を介して負極電源入力端子22に接続含れている。エミ
ッティングダイオード端子1.2間にはダイオード24
.25がそれぞれ逆方向に接続含れている。
Next, the circuit connections of this embodiment will be explained. An emitting diode (between terminals 1 and 2) of the photocoupler 11 is connected in the forward direction to the positive power input terminal 21 via a resistor 23,
Furthermore, the emitter diode (between terminals 1 and 2) of the photocoupler 12 is also connected in the forward direction, and the switch 26
It is connected to the negative power supply input terminal 22 via. There is a diode 24 between the emitter diode terminals 1 and 2.
.. 25 are connected in opposite directions.

更に正極電源入力端子21には、フォトカプラ11のコ
レクタ(端子3)が接続含れ、エミ、り(端子4)は抵
抗31.32を通して負極電源端子22に接続含れてい
る。抵抗31.32の接続点はN型MO8トランジスタ
34のゲートに接続含れている。また負極電源端子22
にはフォトカプラ12のエミッタ(端子4)が接続含れ
、コレクタ(端子3)は抵抗30.29を通して正極電
源端子21に接続含れている。抵抗29.30の共通接
続点はP型MOSトランジスタ33のゲートに接続含れ
ている。P型MO8トランジスタ33のソースは正極電
源入力端子21に、ドレインは正極負荷端子35にそれ
ぞれ接続含れる。
Furthermore, the collector (terminal 3) of the photocoupler 11 is connected to the positive power supply input terminal 21, and the collector (terminal 4) of the photocoupler 11 is connected to the negative power supply terminal 22 through resistors 31 and 32. The connection points of the resistors 31 and 32 are connected to the gate of the N-type MO8 transistor 34. Also, the negative power supply terminal 22
The emitter (terminal 4) of the photocoupler 12 is connected thereto, and the collector (terminal 3) is connected to the positive power supply terminal 21 through a resistor 30.29. A common connection point of the resistors 29 and 30 is connected to the gate of the P-type MOS transistor 33. The P-type MO8 transistor 33 has a source connected to the positive power input terminal 21 and a drain connected to the positive load terminal 35, respectively.

N型MO8トランジスタ34のソースは負極電源入力端
子22に、ドレインは負極負荷端子36に接続含れてい
る。フォトカプラ11および12のフレクタ、エミッタ
間にはそれぞれダイオード27.28が逆方向に接続含
れている。
The source of the N-type MO8 transistor 34 is connected to the negative power input terminal 22, and the drain is connected to the negative load terminal 36. Diodes 27 and 28 are connected in opposite directions between the reflectors and emitters of photocouplers 11 and 12, respectively.

次に本実施例の動作を説明する。正極電源入力端子21
をプラスに、負極電源入力端子22をマイナスに直流電
源(図示せず)を接続した場合には、スイッチ26をオ
ンすることにより、フォトカプラ11.12のダイオー
ドに電流が流れ、フォトカプラ11.12は励起状態と
なり、トランジスタはともに導通状態となる。従ってN
型MOSトランジスタ34のゲートには、抵抗31,3
2により分圧されたソース電位よりプラスの電位が印加
され、ソース、ドレイン間が導通状態となる。また同様
にP型MO5トランジスタのゲートには抵抗29.30
により分圧されたソース電位よりマイナスの電位が印加
され、ソース・ドレイン間が導通状態になる。これによ
り、正極負荷端子35と負極負荷端子36の間に接続含
れた負荷(図示せず)に直流電流を供給することができ
る。
Next, the operation of this embodiment will be explained. Positive power input terminal 21
When a DC power source (not shown) is connected to the positive terminal and the negative power input terminal 22 to the negative terminal, by turning on the switch 26, current flows through the diodes of the photocouplers 11 and 12, and the photocouplers 11. 12 becomes excited, and both transistors become conductive. Therefore, N
Resistors 31 and 3 are connected to the gate of the type MOS transistor 34.
A potential more positive than the source potential divided by 2 is applied, and the source and drain become conductive. Similarly, the gate of the P-type MO5 transistor has a resistance of 29.30
A potential that is more negative than the source potential divided by is applied, and the source and drain become conductive. Thereby, direct current can be supplied to a load (not shown) connected between the positive load terminal 35 and the negative load terminal 36.

次に逆接続状態の正極電源入力端子21をマイナスに、
負極電源入力端子22をプラスに直流電源(図示せず)
を接続した場合には、スイッチ26をオンしてもフォト
カプラ11.12のダイオードがともに逆方向にバイア
スされるので励起されず、トランジスタは開放状態のま
まである。
Next, connect the reversely connected positive power input terminal 21 to negative,
Connect the negative power input terminal 22 to the positive DC power supply (not shown)
When the photocouplers 11 and 12 are connected, even if the switch 26 is turned on, the diodes of the photocouplers 11 and 12 are both biased in the reverse direction, so they are not excited, and the transistors remain open.

しかしフォトカプラ11.12の逆耐圧防止用のダイオ
ード24,25,27.28は導通状態となり、N型M
OSトランジスタ34のゲートはソースに対して負電位
に、P型MO5トランジスタ33のゲートはソースに対
して正電位に、バイアスされるので両方のMO8I−ラ
ンジスタ33,34のドレインソース間は導通とならず
、負荷端子35.36に電源が供給されない。
However, the diodes 24, 25, and 27.28 for preventing reverse breakdown voltage of the photocoupler 11.12 become conductive, and the N-type M
Since the gate of the OS transistor 34 is biased to a negative potential with respect to the source, and the gate of the P-type MO5 transistor 33 is biased to a positive potential with respect to the source, there is no conduction between the drains and sources of both MO8I transistors 33 and 34. First, no power is supplied to the load terminals 35 and 36.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、スイッチと、2個のフォ
トカプラと、N型MOSトランジスタ。
As explained above, the present invention includes a switch, two photocouplers, and an N-type MOS transistor.

P型MO8トランジスタとによりスイッチング回路を構
成することにより、半導体素子により逆接続防止スイッ
チング回路を構成できる。したがって高信頼性を保証出
来る効果がある。
By configuring a switching circuit with a P-type MO8 transistor, a reverse connection prevention switching circuit can be configured with a semiconductor element. Therefore, this has the effect of guaranteeing high reliability.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例の回路図、第2図は従来の逆
接続防止スイッチング回路の回路図である。 11.12・・・フォトカプラ、15・・・リレー、1
8.26・・・スイッチ、24,25,27.28・・
・ダイオード、33・・・P型MO8トランジスタ、3
4・・・N型MOSトランジスタ。
FIG. 1 is a circuit diagram of an embodiment of the present invention, and FIG. 2 is a circuit diagram of a conventional reverse connection prevention switching circuit. 11.12...Photocoupler, 15...Relay, 1
8.26...Switch, 24, 25, 27.28...
・Diode, 33...P-type MO8 transistor, 3
4...N-type MOS transistor.

Claims (1)

【特許請求の範囲】[Claims]  正極電源入力端子と正極負荷端子との間に直列に接続
されたP型MOSトランジスタと、負極電源入力端子と
負極負荷端子との間に直列に接続含れたN型MOSトラ
ンジスタと、前記正極電源入力端子と前記負極電源入力
端子との間にエミッティングダイオード側を直列に接続
した2個のフォトカプラならびにスイッチと、前記フォ
トカプラのそれぞれのフォトトランジスタ側から取り出
した電圧を分圧する抵抗と、前記エミッティングダイオ
ードおよびフォトトランジスタに逆極性の方向で並列接
続されたダイオードとを有し、前記分圧する抵抗で生成
された電圧により前記P型MOSトランジスタおよび前
記N型MOSトランジスタのドレイン電極をそれぞれ制
御することを特徴とする逆接続防止スイッチング回路。
A P-type MOS transistor connected in series between the positive power input terminal and the positive load terminal, an N-type MOS transistor connected in series between the negative power input terminal and the negative load terminal, and the positive power supply two photocouplers and a switch whose emitter diode sides are connected in series between the input terminal and the negative power supply input terminal; a resistor that divides the voltage taken out from each phototransistor side of the photocoupler; an emitting diode and a diode connected in parallel in opposite polarity directions to the phototransistor, and controls the drain electrodes of the P-type MOS transistor and the N-type MOS transistor, respectively, by the voltage generated by the voltage-dividing resistor. A reverse connection prevention switching circuit characterized by:
JP2278073A 1990-10-17 1990-10-17 Inverse connection preventing switching circuit Pending JPH04156226A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2278073A JPH04156226A (en) 1990-10-17 1990-10-17 Inverse connection preventing switching circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2278073A JPH04156226A (en) 1990-10-17 1990-10-17 Inverse connection preventing switching circuit

Publications (1)

Publication Number Publication Date
JPH04156226A true JPH04156226A (en) 1992-05-28

Family

ID=17592273

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2278073A Pending JPH04156226A (en) 1990-10-17 1990-10-17 Inverse connection preventing switching circuit

Country Status (1)

Country Link
JP (1) JPH04156226A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015122863A (en) * 2013-12-24 2015-07-02 日本無線株式会社 Back-flow prevention support device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5529243A (en) * 1978-08-21 1980-03-01 Tokyo Shibaura Electric Co Battery charger
JPH0265625A (en) * 1988-07-05 1990-03-06 Sgs Thomson Microelettronica Spa Electronic circuit which is protected against inversion of polarity of power source battery

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5529243A (en) * 1978-08-21 1980-03-01 Tokyo Shibaura Electric Co Battery charger
JPH0265625A (en) * 1988-07-05 1990-03-06 Sgs Thomson Microelettronica Spa Electronic circuit which is protected against inversion of polarity of power source battery

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015122863A (en) * 2013-12-24 2015-07-02 日本無線株式会社 Back-flow prevention support device

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