JPH04154953A - Production of functional device - Google Patents
Production of functional deviceInfo
- Publication number
- JPH04154953A JPH04154953A JP27381290A JP27381290A JPH04154953A JP H04154953 A JPH04154953 A JP H04154953A JP 27381290 A JP27381290 A JP 27381290A JP 27381290 A JP27381290 A JP 27381290A JP H04154953 A JPH04154953 A JP H04154953A
- Authority
- JP
- Japan
- Prior art keywords
- functional
- base material
- gas
- substrate
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229910052786 argon Inorganic materials 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 39
- 239000007789 gas Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract 8
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
- 238000010992 reflux Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 28
- 238000007872 degassing Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000005478 sputtering type Methods 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009849 vacuum degassing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は基体上に機能性堆積膜を有する機能性素子例え
ば情報記録媒体、半導体デバイス、電子写真用感光デバ
イス、画像入力用ラインセンサー、撮像デバイス、光起
電力素子等の製造方法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a functional element having a functional deposited film on a substrate, such as an information recording medium, a semiconductor device, a photosensitive device for electrophotography, a line sensor for image input, and an imaging device. The present invention relates to a method for manufacturing devices, photovoltaic elements, etc.
従来、情報記録媒体、半導体デバイス、電子写真用感光
デバイス、画像入力用ラインセンサー、撮像デバイス、
光起電力素子等の基体上に機能性堆積膜が形成された機
能性素子が提案され、また実用化されている。これらの
機能性素子は機能性堆積膜の基体への密着性を向上させ
又機能性堆積膜の腐食を防止するために基体に含まれて
いる水分やガス分を除去する即ち脱気目的で膜を形成す
る前に基体を真空中で所定の時間保持する必要があった
。Conventionally, information recording media, semiconductor devices, photosensitive devices for electrophotography, line sensors for image input, imaging devices,
Functional elements, such as photovoltaic elements, in which a functional deposited film is formed on a substrate have been proposed and put into practical use. These functional elements are used to improve the adhesion of the functional deposited film to the substrate and to prevent corrosion of the functional deposited film by removing moisture and gas contained in the substrate. It was necessary to hold the substrate in vacuum for a predetermined period of time before forming.
しかしながら従来の脱気方法では基体を真空中で処理す
る為の設備投資が高く又真空にする際に基体に付着した
ゴミなどの問題点があった。However, the conventional degassing method requires a high investment in equipment for processing the substrate in a vacuum, and has problems such as dust adhering to the substrate when vacuuming.
〔発明が解決しようとしている問題点〕即ち本発明は上
記問題点に鑑みなされたものであり機能性薄膜の基体へ
の密着性に優れ且つ安定性に優れた機能性素子をより安
価に製造することができる機能性素子の製造方法を提供
することを目的とするものである。[Problems to be solved by the invention] That is, the present invention has been made in view of the above-mentioned problems, and aims to produce a functional element having excellent adhesion of a functional thin film to a substrate and excellent stability at a lower cost. The object of the present invention is to provide a method for manufacturing a functional element that can perform the following steps.
本発明の機能性素子の製造方法は、基体上に機能性堆積
膜を有する機能性素子の製造方法に於て基体を空気以外
の乾燥した気体の雰囲気中で保持した後機能性堆積膜を
形成することを特徴とするものである。The method for manufacturing a functional device of the present invention is a method for manufacturing a functional device having a functional deposited film on a substrate, in which the substrate is held in an atmosphere of dry gas other than air, and then the functional deposited film is formed. It is characterized by:
次に図を用いて本発明の詳細な説明す名。The following is a detailed explanation of the invention using figures.
第１図は本発明に係る機能性素子の基体の脱気を行なう
脱気装置の１実施態様を示すものである。FIG. 1 shows one embodiment of a degassing device for degassing a substrate of a functional element according to the present invention.
第１図に於て基体６は基体支持台６上に配置し気体導入
バルブ４より空気以外の気体を導入し脱気装置１内を気
体で置換し、ファン３により脱気装置１内の気体の分布
を均一化する。そしてガス排出バルブ５より気体を排出
し、脱気装置１内の圧力を調整する。In FIG. 1, the base 6 is placed on a base support 6, gas other than air is introduced from the gas introduction valve 4, the inside of the deaerator 1 is replaced with gas, and the gas inside the deaerator 1 is replaced by the fan 3. equalize the distribution of Then, the gas is discharged from the gas discharge valve 5, and the pressure inside the deaerator 1 is adjusted.
本発明に於て用いられる気体としては空気以外の気体が
好ましく特に酸素、窒素及びアルゴンガスから選ばれる
少なくとも１種を含有する気体が好ましい。The gas used in the present invention is preferably a gas other than air, particularly a gas containing at least one selected from oxygen, nitrogen, and argon gas.
更に基体の脱気時間としては機能性堆積膜の基体への密
着性が向上するという点で１時間以上特に５時間〜９時
間が好ましい。Further, the time for degassing the substrate is preferably 1 hour or more, particularly 5 to 9 hours, from the viewpoint of improving the adhesion of the functional deposited film to the substrate.
気体の水分の含有量としては３００ｐｐｍ （容量基準
）以下とした場合基体の脱気をより完全に行なうことが
できる。When the moisture content of the gas is 300 ppm (based on volume) or less, the substrate can be more completely degassed.
この様にして脱気を行なった基体に機能性堆積膜を形成
して機能性素子を得ることができる。A functional device can be obtained by forming a functional deposited film on the substrate that has been degassed in this manner.
第２図は基体上に光磁気記録層を形成するインライン式
光磁気記録媒体の成膜装置の概略図である。FIG. 2 is a schematic diagram of a film forming apparatus for an in-line magneto-optical recording medium that forms a magneto-optical recording layer on a substrate.
第２図において、２１は基体の投入炉、２２は保護誘電
体膜の成膜用スパッタ類、２３は金属非晶質膜の成膜用
スパッタ類、２４は２２と同様の保護誘電体膜の成膜用
スパッタ類である。In FIG. 2, 21 is a furnace for charging the substrate, 22 is a sputtering type for forming a protective dielectric film, 23 is a sputtering type for forming a metal amorphous film, and 24 is a sputtering type for forming a protective dielectric film similar to 22. These are sputters for film formation.
上記の脱気を行なった基体を投入炉２１に入れた後排気
され成膜用スパッタ類２２に搬送されて基体上に保護誘
電体膜が形成され次いでスパッタ類２３に搬送されて光
磁気記録膜となる金属非晶質膜が形成され更にスパッタ
類２４に搬送され金属非晶質膜上に再び保護膜が形成さ
れ排出炉２５で排出され基体上に機能性堆積膜を有する
光磁気記録媒体が得られる。The degassed substrate is placed in a charging furnace 21, then evacuated and transported to a film forming sputtering unit 22 to form a protective dielectric film on the substrate, and then transported to a sputtering unit 23 to form a magneto-optical recording film. A metal amorphous film is formed, which is further conveyed to a sputtering unit 24, a protective film is again formed on the metal amorphous film, and is discharged in an ejection furnace 25 to form a magneto-optical recording medium having a functional deposited film on the substrate. can get.
本発明に於て用いられる基体としては、製造する機能性
素子によっても異なるが例えば情報記録媒体の場合、ポ
リカーボネート、ポリメチルメタクリレート等の樹脂基
体が挙げられる。Although the substrate used in the present invention varies depending on the functional element to be manufactured, for example, in the case of an information recording medium, resin substrates such as polycarbonate and polymethyl methacrylate can be mentioned.
以下実施例を用いて本発明を更に詳細に説明する。 The present invention will be explained in more detail below using Examples.
実施例１
厚さ１．２ｍｍのポリカーボネート樹脂からなる光磁気
ディスクの基体を第１図に示す脱気装置に配置して窒素
ガス（水分３００ｐｐｍ・・・容量基準）をガス導入バ
ルブ４より２ｆ／ｍｉｎで導入し脱気装置内を窒素ガス
で充填し次いでガス排出バルブを調整した。Example 1 A magneto-optical disk substrate made of polycarbonate resin with a thickness of 1.2 mm was placed in the degassing device shown in FIG. The inside of the deaerator was filled with nitrogen gas, and then the gas discharge valve was adjusted.
この状態で基体を１時間、３時間、５時間、７時間、９
時間処理した後各々の基体に第２図に示す光磁気記録媒
体成膜装置を用いて成膜し５枚の光磁気ディスクを得た
。In this state, the substrate was heated for 1 hour, 3 hours, 5 hours, 7 hours, and 9 hours.
After the time treatment, a film was formed on each substrate using the magneto-optical recording medium film forming apparatus shown in FIG. 2 to obtain five magneto-optical disks.
この様にして得た光磁気ディスクの基体及び機能性堆積
膜の密着力を測定する為にクロスハツチテストを行なっ
た。A crosshatch test was conducted to measure the adhesion between the substrate of the magneto-optical disk obtained in this manner and the functional deposited film.
参考例１
ポリカーボネート基板２を直接第２図の光磁気記録媒体
成膜装置にセットして投入炉■で各々１，３゜５、７．
９時間真空脱気をした後実施例１と同様にして成膜し５
枚の光磁気ディスクを製造した。Reference Example 1 A polycarbonate substrate 2 was directly set in the magneto-optical recording medium film forming apparatus shown in FIG.
After vacuum degassing for 9 hours, a film was formed in the same manner as in Example 1.
A number of magneto-optical disks were manufactured.
上記実施例１及び参考例１で作成した各々の光磁気ディ
スクについてそのキューリー温度を測定したところ第３
図に示す様なキューリー温度曲線を得た。The Curie temperature of each of the magneto-optical disks prepared in Example 1 and Reference Example 1 was measured.
A Curie temperature curve as shown in the figure was obtained.
次に基体と機能性堆積膜の密着力を測定する為に成膜後
の基体に鋭利な刃物で１ｍｍ間隔でたて、よこ各６本直
交して線を引き１辺１ｍｍの正方形のますを２５コ形成
しその上に粘着テープを貼りつけて十分に密着させた後
にその粘着テープを剥してテープに付着した正方形のま
すの数により基体への膜の密着度を測定した。（クロス
ハツチテスト）即ちます２５コのうちテープにっていき
たものがＯコ（０／’２５）の場合膜の密着は良好であ
り、基体の水分、ガス分は十分除去されていると判断し
た。その結果を表１に示す。Next, in order to measure the adhesion between the substrate and the functional deposited film, we used a sharp knife to make square boxes of 1 mm on each side by drawing 6 lines perpendicularly on each side at 1 mm intervals on the substrate after the film was formed. After 25 coats were formed and an adhesive tape was pasted on it to ensure sufficient adhesion, the adhesive tape was peeled off and the degree of adhesion of the film to the substrate was measured by the number of square squares adhered to the tape. (Cross hatch test) In other words, if out of 25 pieces that went to the tape is O piece (0/'25), it is judged that the adhesion of the membrane is good and that moisture and gas from the substrate have been sufficiently removed. did. The results are shown in Table 1.
表−１
第３図及び表−１より実施例１の光磁気ディスクは真空
中で基体の処理を行なった光磁気ディスクとほぼ同等の
性能を有することが分かる。Table 1 From FIG. 3 and Table 1, it can be seen that the magneto-optical disk of Example 1 has almost the same performance as the magneto-optical disk whose substrate was processed in vacuum.
実施例２〜４
水分含有量を表２に示すようにした以外は実施例１と同
様にして光磁気記録媒体を作製した。Examples 2 to 4 Magneto-optical recording media were produced in the same manner as in Example 1, except that the water content was as shown in Table 2.
これら記録媒体につき、実施例１と同様の方法でキュー
リー温度を測定し、クロスハツチテストを行なった。The Curie temperatures of these recording media were measured in the same manner as in Example 1, and a crosshatch test was conducted.
その結果を表２に示す。The results are shown in Table 2.
表−２
実施例５〜８
使用する気体の種類を表３に示すようにした以外は実施
例１と同様にして光磁気記録媒体を作製した。Table 2 Examples 5 to 8 Magneto-optical recording media were produced in the same manner as in Example 1, except that the types of gases used were as shown in Table 3.
これら記録媒体につき実施例２と同様の方法でキューリ
ー温度を測定しクロスハツチテストを行なった。The Curie temperatures of these recording media were measured in the same manner as in Example 2, and a crosshatch test was conducted.
その結果を表３に示す。The results are shown in Table 3.
表−３
〔発明の効果〕
以上説明した様に本発明によれば簡便且つ低コストで基
体の水分、ガス分等を除去でき高性能な機能性素子を得
ることができる。Table 3 [Effects of the Invention] As explained above, according to the present invention, moisture, gas, etc. can be removed from the substrate simply and at low cost, and a high-performance functional element can be obtained.
第１図は本発明の基体の脱気処理を行なう装置の概略図
、
第２図はインライン式光記録媒体の製造装置の概略図、
第３図は実施例１及び参考例１の基体の処理時間及びキ
ューリー温度の関係を示すグラフである。
１・・・前処理装置
２・・・基体
３・・・ファン
４・・・ガス導入バルブ
５・・・ガス排出バルブ
６・・・基体支持台
７・・・ゲートバルブ
２１・・・投入炉
２２・・・下地保護層成膜炉
２３・・・記録層成脱炉
２４・・・上地保護層成脱炉
２５・・・排出炉Fig. 1 is a schematic diagram of an apparatus for degassing a substrate of the present invention, Fig. 2 is a schematic diagram of an in-line optical recording medium manufacturing apparatus, and Fig. 3 is a schematic diagram of an apparatus for degassing a substrate of the present invention. It is a graph showing the relationship between time and Curie temperature. 1... Pretreatment device 2... Substrate 3... Fan 4... Gas inlet valve 5... Gas discharge valve 6... Substrate support stand 7... Gate valve 21... Charge furnace 22...Underlying protective layer forming furnace 23...Recording layer forming furnace 24...Upper protective layer forming furnace 25...Discharge furnace
Claims (4)
方法に於て基体を空気以外の乾燥した気体の雰囲気中で
保持した後機能性堆積膜を形成することを特徴とする機
能性素子の製造方法。(1) A method for producing a functional element having a functional deposited film on a substrate, characterized in that the functional deposited film is formed after the substrate is held in a dry gas atmosphere other than air. Method of manufacturing elements.
下である請求項（１）の機能性素子の製造方法。(2) The method for manufacturing a functional element according to claim (1), wherein the moisture concentration of the gas is 300 ppm or less on a capacity basis.
なくとも１種を含有する請求項（１）の機能性素子の製
造方法。(3) The method for manufacturing a functional element according to claim (1), wherein the gas contains at least one selected from nitrogen, argon, and oxygen.
機能性素子の製造方法。(4) The method for manufacturing a functional element according to claim (1), wherein the functional deposited film is a metal film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27381290A JPH04154953A (en) | 1990-10-12 | 1990-10-12 | Production of functional device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27381290A JPH04154953A (en) | 1990-10-12 | 1990-10-12 | Production of functional device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04154953A true JPH04154953A (en) | 1992-05-27 |
Family
ID=17532907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27381290A Pending JPH04154953A (en) | 1990-10-12 | 1990-10-12 | Production of functional device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04154953A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7727588B2 (en) * | 2003-09-05 | 2010-06-01 | Yield Engineering Systems, Inc. | Apparatus for the efficient coating of substrates |
-
1990
- 1990-10-12 JP JP27381290A patent/JPH04154953A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7727588B2 (en) * | 2003-09-05 | 2010-06-01 | Yield Engineering Systems, Inc. | Apparatus for the efficient coating of substrates |
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