JPH04144959A - Low temperature-calcining ceramic material - Google Patents
Low temperature-calcining ceramic materialInfo
- Publication number
- JPH04144959A JPH04144959A JP2266647A JP26664790A JPH04144959A JP H04144959 A JPH04144959 A JP H04144959A JP 2266647 A JP2266647 A JP 2266647A JP 26664790 A JP26664790 A JP 26664790A JP H04144959 A JPH04144959 A JP H04144959A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- weight
- ceramic material
- powder
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910010293 ceramic material Inorganic materials 0.000 title claims abstract description 11
- 238000001354 calcination Methods 0.000 title abstract description 5
- 239000011521 glass Substances 0.000 claims abstract description 32
- 239000000843 powder Substances 0.000 claims abstract description 16
- 239000000203 mixture Substances 0.000 claims abstract description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 12
- 239000000463 material Substances 0.000 abstract description 7
- 238000002156 mixing Methods 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000008054 signal transmission Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 17
- 239000002994 raw material Substances 0.000 description 10
- 239000004020 conductor Substances 0.000 description 7
- 238000010304 firing Methods 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical group O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- -1 oxides Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野〕
本発明は電子工業用部品に適し、特に約１０００°Ｃ以
下の低温で焼成可能な低誘電率セラミック基板材料に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a low dielectric constant ceramic substrate material suitable for electronic industrial components, and particularly capable of being fired at a low temperature of about 1000° C. or less.
従来のセラミック多層基板は、絶縁層にアルミナを用い
、導体に高融点金属であるタングステンあるいはモリブ
デンを用いて、１６００°Ｃ程度の温度で焼成して製作
されていた。しかし導体としてタングステンやモリブデ
ンを使用するため水素炉などを用いて還元性雰囲気で処
理する必要があり、省エネルギーの観点から好ましくな
く、しかもタングステンやモリブデンなどの導体は導体
抵抗が大きく、配線幅を細くし、実装密度を上げること
が困難であった。さらに絶縁層の誘電率が１０程度と大
きく、信号伝播速度が遅れる原因になっていた。Conventional ceramic multilayer substrates are manufactured by using alumina for the insulating layer and tungsten or molybdenum, which is a high melting point metal, for the conductor, and firing at a temperature of about 1600°C. However, since tungsten and molybdenum are used as conductors, they must be treated in a reducing atmosphere using a hydrogen furnace, which is undesirable from an energy saving perspective.Moreover, conductors such as tungsten and molybdenum have high conductor resistance, making it difficult to narrow the wiring width. However, it was difficult to increase the packaging density. Furthermore, the dielectric constant of the insulating layer is as large as about 10, which causes a delay in signal propagation speed.
これに対して、近年では絶縁層に、１０００°Ｃ以下で
焼結する低温焼成セラミック材料を基体として用い、導
体材料としては導体抵抗の低い銀、銀／パラジウム、金
、銅等が用いられた多層基板が開発されつつあるが、誘
電率が７前後と充分ではない。In contrast, in recent years, low-temperature fired ceramic materials that are sintered at temperatures below 1000°C have been used as base materials for insulating layers, and materials with low conductor resistance such as silver, silver/palladium, gold, and copper have been used as conductor materials. Although multilayer substrates are being developed, their dielectric constant is around 7, which is not sufficient.
本発明は上記の問題点を解決するためになされたもので
あり、極めて低い誘電率の絶縁材料を用いることにより
、信号伝播の遅延速度に充分対応でき、高周波回路に適
するセラミック材料を提供することを目的とする。The present invention has been made in order to solve the above-mentioned problems, and provides a ceramic material that can sufficiently cope with the delay speed of signal propagation by using an insulating material with an extremely low dielectric constant, and is suitable for high-frequency circuits. With the goal.
〔課題を解決するための手段及び作用〕本発明のセラミ
ック基板材料は、酸化物に換算して表される組成がＳｉ
０□４０〜７０重量％、Ａ ｆ ｚａｚＯ〜３０重量％
、ａ、ｏ、 ５〜２０重量％、５ｒＯ１０〜３５重量％
であるガラス粉末５０〜６５重量％と、ＡＩ！、ｚＯ：
＋粉末３５〜５０重量％とからなる低温焼成セラミック
材料である。[Means and effects for solving the problems] The ceramic substrate material of the present invention has a composition expressed in terms of oxide of Si.
0□40~70% by weight, A f zazO~30% by weight
, a, o, 5-20% by weight, 5rO 10-35% by weight
50-65% by weight of glass powder which is AI! ,zO:
+ 35 to 50% by weight of powder.
各成分については上記の組成範囲より外れるとそれぞれ
以下に述べるような傾向が現われる。すなわちガラス成
分の５ｉ（ｈにあっては少な過ぎる場合には仮焼時に匣
鉢中で溶融し、ガラスフリット化が困難になり、多過ぎ
る場合には体積抵抗率、抗折強度の低下を招く。５ｉｎ
２は上記範囲中４０〜７０重量％の範囲が好ましい。When each component deviates from the above composition range, the following tendencies appear. That is, if the glass component 5i (h) is too small, it will melt in the sagger during calcination, making it difficult to form a glass frit, and if it is too large, it will cause a decrease in volume resistivity and bending strength. .5in
2 is preferably in the range of 40 to 70% by weight within the above range.
ガラス成分のＡ １２０３にあっては、３０重量％より
多くなると１０００″Ｃ以下での焼結が困難となるため
３０重重重以下が好ましい。Regarding the glass component A 1203, if it exceeds 30% by weight, sintering at 1000''C or less becomes difficult, so it is preferably 30% by weight or less.
ガラス成分の８２０３にあっては、少な過ぎる場合には
ガラス化が困難になり基板は焼結せず、多過ぎる場合に
は、仮焼時に匣鉢中で溶融し、ガラスフリット化が困難
になる。Ｂ２０．は上記範囲中５〜２０重量％の範囲が
好ましい。Regarding the glass component 8203, if it is too small, it will be difficult to vitrify and the substrate will not be sintered, and if it is too large, it will melt in the sagger during calcination, making it difficult to form a glass frit. . B20. is preferably in the range of 5 to 20% by weight within the above range.
ガラス成分のＳｒＯにあっては少な過ぎる場合に体積抵
抗率及び抗折強度の低下を招き、多過ぎる場合には誘電
率の増大を招く。ＳｒＯは上記範囲中１０〜３５重量％
の範囲が好ましい。When the amount of SrO in the glass component is too small, the volume resistivity and the bending strength decrease, and when it is too large, the dielectric constant increases. SrO is 10 to 35% by weight in the above range
A range of is preferred.
本発明のセラミック材料で使用するガラス粉末は上記の
成分組成を与える所定量の各原料（原料の形態は炭酸塩
、炭化物、酸化物、その他化合物などでよい。）を秤量
し、混合した後、空気中において７００°Ｃ程度の温度
で仮焼して得られる一部結晶相の混在したガラス粉末で
ある。The glass powder used in the ceramic material of the present invention is prepared by weighing and mixing predetermined amounts of each raw material (the raw materials may be in the form of carbonates, carbides, oxides, and other compounds) giving the above-mentioned composition. It is a glass powder partially mixed with a crystalline phase obtained by calcining in air at a temperature of about 700°C.
また本発明のセラミック材料で使用するＡｌｔｏｓは通
常の回路基板材料に用いられているＡ／２２０３と同等
のものであり、ガラス原料で使用したＡ ｌ ｚｏｚと
同等のものである。好ましくは純度９６％以上のものを
使用し、より好ましいＡｌｚＯｘ純度は９９％以上であ
る。Further, Altos used in the ceramic material of the present invention is equivalent to A/2203 used in ordinary circuit board materials, and is equivalent to Al zoz used as a glass raw material. Preferably, AlzOx having a purity of 96% or more is used, and a more preferable AlzOx purity is 99% or more.
本発明のセラミック材料においてはガラス／アルミナの
比を好ましくは５０１５０から６５／３５にする。In the ceramic material of the invention, the glass/alumina ratio is preferably between 50,150 and 65/35.
５０１５０のガラス／アルミナ比よりもガラスが少ない
と、１０００″Ｃ以下での焼成が困難となり、６５／３
５のガラス／アルミナ比よりガラスが多いと、焼成時に
基板の軟化が著しくなり良好な基板を得ることができな
くなる。ガラス／アルミナの配合比は上記範囲中５０１
５０から６５／３５が好ましい。If there is less glass than the glass/alumina ratio of 50150, it will be difficult to fire at temperatures below 1000"C, resulting in a ratio of 65/3.
If the glass/alumina ratio is greater than 5, the substrate will become significantly softened during firing, making it impossible to obtain a good substrate. The blending ratio of glass/alumina is 501 within the above range.
50 to 65/35 is preferred.
本発明のセラミック材料を使って基板を製作する際には
、各原料をバインダー、溶剤と共に混合してスラリーを
つくり、このスラリーから通常の成形法でグリーンシー
トを作製し、これに導体ペーストを印刷し、約１０００
℃以下、さらには９００℃以下の低温で焼成することが
できる。When manufacturing a substrate using the ceramic material of the present invention, each raw material is mixed with a binder and a solvent to create a slurry, a green sheet is created from this slurry using a normal molding method, and a conductive paste is printed on it. About 1000
It can be fired at a low temperature of .degree. C. or lower, and even 900.degree. C. or lower.
以下、実施例により本発明を更に詳しく説明する。 Hereinafter, the present invention will be explained in more detail with reference to Examples.
ス１１殊１
ガラス原料組成物を酸化物に換算してＳｉ０□５５重量
％、Ａｆｚｏ：＋１８重量％、８２０３９重量％、５ｒ
０１８重量％になるように各原料（原料の形態は炭酸塩
、炭化物、酸化部、その他化合物）を所定量秤量、混合
後に空気中で約７００℃で仮焼し、粉末状に粉砕しガラ
ス粉末を得た。ガラス／アルミナの比が５０１５０から
６５／３５になるようにガラス粉末と八２□０３を混合
し、試料Ｎα１〜３を調整した。これらの粉末試料１０
０重量部にポリビニルブチラール９重量部、及びテルピ
ネオール、イソホロン等からなる溶剤９０重量部とを混
合してスラリー化し、ドクターブレード法によりテープ
状に成形し、５２０℃で有機物を除去した後、８５０〜
９００ ’Ｃで焼成して基板を製作した。S11 Special 1 Glass raw material composition converted to oxide: Si0□55% by weight, Afzo: +18% by weight, 82039% by weight, 5r
A predetermined amount of each raw material (in the form of carbonate, carbide, oxidized part, and other compounds) is weighed and mixed so that the concentration is 0.18% by weight, and then calcined in air at about 700°C and crushed into powder to produce glass powder. I got it. Glass powder and 82□03 were mixed so that the glass/alumina ratio was from 50,150 to 65/35 to prepare samples Nα1 to Nα3. These powder samples 10
0 parts by weight, 9 parts by weight of polyvinyl butyral, and 90 parts by weight of a solvent consisting of terpineol, isophorone, etc. were mixed to form a slurry, formed into a tape shape by a doctor blade method, and after removing organic matter at 520 ° C.
A substrate was manufactured by firing at 900'C.
得られた基板の特性を表１．Ｎα１〜３に示す。Table 1 shows the characteristics of the obtained substrate. Shown in Nα1-3.
几較■土
ガラス原料組成が随１〜３と同じであり、ガラス／アル
ミナの比が上記範囲外の試料Ｎα９，１０の基板を同様
に製作した。Comparison Samples Nα9 and 10 substrates having the same glass raw material compositions as those in Examples 1 to 3 and glass/alumina ratios outside the above range were fabricated in the same manner.
実施例１及び比較例１より、ガラス／アルミナの比が上
記範囲中で、８００〜９００°Ｃで焼成でき、特性良好
な基板が得られることが分る。From Example 1 and Comparative Example 1, it can be seen that when the glass/alumina ratio is within the above range, firing can be performed at 800 to 900°C, and a substrate with good characteristics can be obtained.
実施１−
ガラス原料組成が上記範囲中で表１．Ｎα４〜８のガラ
ス粉末を実施例１と同様に調整し、ガラス／アルミナの
比が６０／４０の基板を製作した。Example 1 - Glass raw material composition is within the above range as shown in Table 1. Glass powder with Nα4 to 8 was prepared in the same manner as in Example 1, and a substrate with a glass/alumina ratio of 60/40 was manufactured.
得られた基板の特性を表１．Ｎα４〜８に示す。Table 1 shows the characteristics of the obtained substrate. Shown in Nα4-8.
ル較炭叉
ガラス原料組成が上記範囲外のガラス粉末を同様に調整
し、ガラス／アルミナの比が６０／４０の基板を同様に
製作した。A glass powder having a raw material composition of carbon dioxide glass outside the above range was prepared in the same manner, and a substrate having a glass/alumina ratio of 60/40 was similarly produced.
得られた基板の特性を表１、比較例Ｎα１１〜１７に示
す。The characteristics of the obtained substrates are shown in Table 1 and Comparative Examples Nα11 to Nα17.
実施例２及び比較例２より、ガラス原料組成が上記範囲
中でのみ、誘電率が低く、体積抵抗率及び抗折強度の優
れた基板が得られることが分る。From Example 2 and Comparative Example 2, it can be seen that a substrate with a low dielectric constant and excellent volume resistivity and bending strength can be obtained only when the glass raw material composition is within the above range.
以上の如く、本発明によると、焼成温度が１０００℃以
下の低温焼成可能セラミック材料が提供され、焼成のコ
ストダウンができ、かつ銀、銀／パラジウム、金、銅等
の低抵抗導体と同時焼成が可能となる。しかも、このセ
ラミック材料は誘電率が５．５以下（Ｉ ＭＨｚ）と小
さいので、信号伝播速度を早めることができ、高周波回
路に適するという利点がある。As described above, according to the present invention, a ceramic material that can be fired at a low temperature of 1000°C or less is provided, which can reduce the cost of firing and can be fired simultaneously with a low-resistance conductor such as silver, silver/palladium, gold, or copper. becomes possible. Moreover, since this ceramic material has a small dielectric constant of 5.5 or less (I MHz), it has the advantage of being able to increase the signal propagation speed and being suitable for high frequency circuits.
Claims (1)
ｌ＿２Ｏ＿３粉末３５〜５０重量％とから成る低温焼成
セラミック材料。1. (a) 50-65% by weight of glass powder with a composition of 240-70% by weight of SiO, 35-20% by weight of B_2O, 10-35% by weight of SrO in terms of oxides; and (b) A
A low-temperature fired ceramic material comprising 35-50% by weight of l_2O_3 powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2266647A JPH04144959A (en) | 1990-10-05 | 1990-10-05 | Low temperature-calcining ceramic material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2266647A JPH04144959A (en) | 1990-10-05 | 1990-10-05 | Low temperature-calcining ceramic material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04144959A true JPH04144959A (en) | 1992-05-19 |
Family
ID=17433738
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2266647A Pending JPH04144959A (en) | 1990-10-05 | 1990-10-05 | Low temperature-calcining ceramic material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04144959A (en) |
-
1990
- 1990-10-05 JP JP2266647A patent/JPH04144959A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4749665A (en) | Low temperature fired ceramics | |
| EP0163155B1 (en) | Low temperature fired ceramics | |
| JPS6244879B2 (en) | ||
| JPH04243962A (en) | Inorganic composition with low dielectric constant for multi-layered ceramic package and method for preparation thereof | |
| JPH04231363A (en) | Conductive composition containing iolite and glass | |
| JPH05211005A (en) | Dielectric composition | |
| JP3943341B2 (en) | Glass ceramic composition | |
| JP2001084835A (en) | Insulation composition, insulation paste, and laminated electronic part | |
| JPS62278145A (en) | Sintered material of glass ceramic | |
| JP3678260B2 (en) | Glass ceramic composition | |
| JPH10120436A (en) | Glass ceramic dielectric material | |
| JP2712031B2 (en) | Composition for circuit board and electronic component using the same | |
| JPH04144959A (en) | Low temperature-calcining ceramic material | |
| JPH0517211A (en) | Substrate material and circuit substrate | |
| JPS61219741A (en) | Oxide dielectric material | |
| JP3315233B2 (en) | Composition for ceramic substrate | |
| JPH03141153A (en) | Inorganic composition having low-temperature sintering property and low dielectric constant | |
| JPH01166599A (en) | Manufacture of laminated ceramic substrate | |
| JPH0260236B2 (en) | ||
| JPH0738214A (en) | Glass ceramic board and manufacturing method | |
| KR100201160B1 (en) | Resistance material composition, resistive paste, and resistor | |
| JPH0312357A (en) | Low temperature burned ceramic substrate material | |
| JP3315182B2 (en) | Composition for ceramic substrate | |
| JP2652229B2 (en) | Multilayer circuit ceramic substrate | |
| JPH1112037A (en) | Low-temperature-sinterable ceramic composition and low-temperature-sintered ceramic |