JPH04132225A - Furnace core tube for semiconductor-substrate heat-treatment use - Google Patents
Furnace core tube for semiconductor-substrate heat-treatment useInfo
- Publication number
- JPH04132225A JPH04132225A JP25446590A JP25446590A JPH04132225A JP H04132225 A JPH04132225 A JP H04132225A JP 25446590 A JP25446590 A JP 25446590A JP 25446590 A JP25446590 A JP 25446590A JP H04132225 A JPH04132225 A JP H04132225A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- core tube
- furnace core
- furnace
- rate control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 18
- 238000010438 heat treatment Methods 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 2
- 238000009529 body temperature measurement Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体基板熱処理用炉芯管に関するものである
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a furnace core tube for heat treatment of semiconductor substrates.
従来の炉芯管は、第２図の縦断面図に示すように、炉芯
管１に半導体基板８を出し入れするなめの半導体基板挿
入口９の反対側にガス噴出口３が付いている。As shown in the longitudinal cross-sectional view of FIG. 2, a conventional furnace core tube has a gas outlet 3 on the opposite side of a diagonal semiconductor substrate insertion opening 9 through which a semiconductor substrate 8 is inserted into and taken out of the furnace core tube 1.
従来、半導体熱処理用炉芯管は、ガス導入口に近い半導
体基板と遠い半導体基板とでは、到達したガスの濃度に
差が生じるため、炉芯管加熱用ヒータを分割し、炉芯管
内に温度勾配をつけることによって膜厚の均一性を保っ
ている。しかしながら、温度測定による膜厚調整は難し
く、温度測定を終わらせるのにかなり時間がかかつてし
まう。Conventionally, in furnace core tubes for semiconductor heat treatment, there is a difference in the concentration of the gas that reaches the semiconductor substrate near the gas inlet and the semiconductor substrate further away from the gas inlet, so the heater for heating the furnace core tube is divided and the temperature is controlled inside the furnace core tube. The uniformity of the film thickness is maintained by creating a gradient. However, it is difficult to adjust the film thickness by temperature measurement, and it takes a considerable amount of time to complete the temperature measurement.
又、炉芯管のガス噴出口が１個所の為、ガス導入口に近
い方から反対側へガスが流れて行く際、ガス導入口に近
い半導体基板等に触れたガスが流れて来る為、異物がガ
スとともに他の半導体基板に付着し、短絡等の欠陥を生
じて品質を劣化させるという欠点がある。In addition, since the furnace core tube has only one gas outlet, when the gas flows from the side near the gas inlet to the opposite side, the gas that comes into contact with the semiconductor substrate, etc. near the gas inlet will flow. There is a drawback that foreign matter adheres to other semiconductor substrates together with gas, causing defects such as short circuits and deteriorating quality.
本発明の半導体基板熱処理用炉芯管は、炉芯管内にガス
導入部を複数設け、各ガス導入部の管内上部にガス噴出
口を複数有し、各ガス導入部のそれぞれにガス流量制御
装置を有している。The furnace core tube for semiconductor substrate heat treatment of the present invention has a plurality of gas introduction sections in the furnace core tube, a plurality of gas jet ports in the upper part of the tube of each gas introduction section, and a gas flow rate control device for each gas introduction section. have.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図（ａ）、（ｂ）、（ｃ）は本発明の一実施例の半
導体基板熱処理用炉芯管を示す図で、図（ａ）は構成図
、図（ｂ）は図（ａ）のＡ−Ａ断面図、図（ｃ）は図（
ａ＞のＢ−Ｂ断面図である。FIGS. 1(a), (b), and (c) are diagrams showing a furnace core tube for semiconductor substrate heat treatment according to an embodiment of the present invention; FIG. 1(a) is a configuration diagram, and FIG. ), Figure (c) is a cross-sectional view of Figure (
a> is a BB sectional view.
第１図（ａ）において、３個のガス導入配管ノズル４と
、同数のガス流量制御装置２をそれぞれ有し、各ガス導
入配管ノズル４は、炉芯管のフロント側５、センタ一部
６、リア側７の３箇所のガス導入部に別れて図（ｂ）に
示すように配管され、それぞれのガス導入部は図（ｃ）
に示すようにガス噴出口３を設け、ガスを炉芯管の上か
ら下へ噴出することによって、炉芯管内全域にわたって
ガスの濃度を均一にすることにより、炉内膜厚の均一性
を向上させることができる。In FIG. 1(a), each gas introduction pipe nozzle 4 has three gas introduction pipe nozzles 4 and the same number of gas flow rate control devices 2, and each gas introduction pipe nozzle 4 has a front side 5 and a center part 6 of the furnace core tube. The pipes are separated into three gas introduction parts on the rear side 7 as shown in Figure (b), and each gas introduction part is arranged as shown in Figure (c).
As shown in the figure, a gas outlet 3 is installed to eject gas from the top to the bottom of the furnace core tube, thereby making the gas concentration uniform throughout the entire area inside the furnace core tube, thereby improving the uniformity of the film thickness inside the furnace. can be done.
又、炉芯管上部よりガスを噴出する事によって、リファ
レンスウェハーからの異物等の付着が避けられ、半導体
基板１枚毎に未反応ガスが供給される為、品質の向上に
もなる。次に、ガス流量制御装置２を個々のガス導入配
管用にそれぞれ分けた事によって、ガス流量をそれぞれ
コントロール出来るので、炉芯管加熱用ヒーターを分割
し炉芯管内に温度勾配を設けることは必要なくなる。Furthermore, by ejecting gas from the upper part of the furnace core tube, adhesion of foreign matter from the reference wafer can be avoided, and unreacted gas is supplied to each semiconductor substrate, which also improves quality. Next, by dividing the gas flow control device 2 for each individual gas introduction pipe, the gas flow rate can be controlled individually, so there is no need to divide the heater for heating the furnace core tube and create a temperature gradient inside the furnace core tube. It disappears.
第３図のグラフは、炉内温度９００℃の条件の下で、炉
内半導体基板の膜厚を一定にするために必要な、外部熱
電対設定温度を示す、白丸は従来炉芯管の温度分布であ
り、黒丸は本発明の温度分布を示す、従来は、炉内基板
の膜厚を一定にするために、Ｆ（フロント側５）、Ｃ（
センタ一部６）、Ｒ（リア側７）の３箇所の出力を調整
する必要があったが、本実施例では、Ｆ、Ｃ，Ｈの出力
値は同じなので１つ決めてやればよい。従って、条件出
しの時間短縮となる。The graph in Figure 3 shows the external thermocouple setting temperature required to maintain a constant film thickness of the semiconductor substrate in the furnace under the condition of the furnace temperature of 900°C.The white circle indicates the temperature of the conventional furnace core tube. The black circles indicate the temperature distribution of the present invention. Conventionally, in order to keep the film thickness of the substrate in the furnace constant, F (front side 5), C (
It was necessary to adjust the outputs at three locations, center part 6) and R (rear side 7), but in this embodiment, the output values for F, C, and H are the same, so it is only necessary to determine one. Therefore, the time required to set conditions is shortened.
以上説明したように本発明の半導体基板熱処理用炉芯管
は、ガス導入部を複数有し、ガス導入部と同数のガス流
量制御装置でガスをそれぞれの噴出口より噴出し、炉芯
管内全域においてガスの濃度を均一にしたので、炉内膜
厚均一性の向上が得られ、異物等の付着が避けられ、半
導体基板１枚毎に未反応ガスが供給され品質の向上につ
ながるという効果を有する。As explained above, the furnace core tube for heat treatment of semiconductor substrates of the present invention has a plurality of gas introduction parts, and the same number of gas flow rate control devices as the gas introduction parts blows out gas from each spout, and the entire inside of the furnace core tube is By making the gas concentration uniform in the process, it is possible to improve the uniformity of the film thickness in the furnace, avoid adhesion of foreign substances, and improve quality by supplying unreacted gas to each semiconductor substrate. have
又、ガス流量制御装置を個々のガス導入管用にそれぞれ
分けて、ガス流量を個々にコントロール出来るようにし
たので、炉芯管内の温度勾配は必要なくなり、温度測定
の時間の短縮という効果を有する。Furthermore, since the gas flow rate control device is separated for each individual gas introduction tube so that the gas flow rate can be controlled individually, there is no need for a temperature gradient in the furnace core tube, which has the effect of shortening the time for temperature measurement.
側、６・・・センタ一部、７・・・リア側、８・・・半
導体基板、９・・・半導体基板挿入口。Side, 6... Center part, 7... Rear side, 8... Semiconductor board, 9... Semiconductor board insertion slot.
Claims (1)
ガス導入部を複数有し、かつ各ガス導入部毎に炉芯管内
へのガス噴出口を炉芯管内上部に複数有し、各ガス導入
部のそれぞれにガス流量制御装置が接続されていること
を特徴とする半導体基板熱処理用炉芯管。In a furnace core tube for semiconductor substrate heat treatment, the furnace core tube has a plurality of gas introduction parts, and each gas introduction part has a plurality of gas injection ports in the upper part of the furnace core tube, and each gas introduction A furnace core tube for semiconductor substrate heat treatment, characterized in that a gas flow rate control device is connected to each of the sections.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25446590A JPH04132225A (en) | 1990-09-25 | 1990-09-25 | Furnace core tube for semiconductor-substrate heat-treatment use |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25446590A JPH04132225A (en) | 1990-09-25 | 1990-09-25 | Furnace core tube for semiconductor-substrate heat-treatment use |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04132225A true JPH04132225A (en) | 1992-05-06 |
Family
ID=17265409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25446590A Pending JPH04132225A (en) | 1990-09-25 | 1990-09-25 | Furnace core tube for semiconductor-substrate heat-treatment use |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04132225A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6348417B1 (en) | 1998-04-03 | 2002-02-19 | Nec Corporation | Semiconductor device manufacturing apparatus and semiconductor device manufacturing method |
-
1990
- 1990-09-25 JP JP25446590A patent/JPH04132225A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6348417B1 (en) | 1998-04-03 | 2002-02-19 | Nec Corporation | Semiconductor device manufacturing apparatus and semiconductor device manufacturing method |
| US6391116B2 (en) | 1998-04-03 | 2002-05-21 | Nec Corporation | Semiconductor device manufacturing apparatus and semiconductor device manufacturing method |
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