JPH04125438A - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- JPH04125438A JPH04125438A JP24401090A JP24401090A JPH04125438A JP H04125438 A JPH04125438 A JP H04125438A JP 24401090 A JP24401090 A JP 24401090A JP 24401090 A JP24401090 A JP 24401090A JP H04125438 A JPH04125438 A JP H04125438A
- Authority
- JP
- Japan
- Prior art keywords
- soft resin
- wire
- strain gauge
- chip
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 239000011347 resin Substances 0.000 claims abstract description 28
- 229920005989 resin Polymers 0.000 claims abstract description 28
- 239000002253 acid Substances 0.000 claims abstract description 19
- 239000000853 adhesive Substances 0.000 abstract description 6
- 230000001070 adhesive effect Effects 0.000 abstract description 6
- 230000008646 thermal stress Effects 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 3
- 238000005260 corrosion Methods 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、耐熱性を損なうことなく、耐酸性を向上させ
る半導体式圧力センサの構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a structure of a semiconductor pressure sensor that improves acid resistance without impairing heat resistance.
従来の圧力センサは、特公昭５８−７１７９号に記載さ
れているように、１種類の軟質レジンで半導体チップと
金線を覆っている。他の方法としては、実開昭６１−３
４３６号に記載のように、感圧部表面と半導体チップ間
に形成される微細空間へ液体を封入する構造になってい
る。In a conventional pressure sensor, a semiconductor chip and a gold wire are covered with one type of soft resin, as described in Japanese Patent Publication No. 58-7179. Another method is
As described in No. 436, the structure is such that a liquid is sealed in a microscopic space formed between the surface of the pressure sensitive part and the semiconductor chip.
上記従来技術の特公昭５８−７１７９号は、軟質レジン
と半導体チップの距離が短く、軟質レジンの界面から、
酸液が浸入しないようにする点は配慮されていなかった
。そのため、ＡＱ電極へ酸液が浸入して、ＡＱ電極を腐
食する問題があった。In the above-mentioned prior art Japanese Patent Publication No. 58-7179, the distance between the soft resin and the semiconductor chip is short, and from the interface of the soft resin,
No consideration was given to preventing acid solution from entering. Therefore, there was a problem that the acid solution penetrated into the AQ electrode and corroded the AQ electrode.
また、従来技術の実開昭６１−３４３６号では、ダイヤ
フラムが設けられているので、酸液の浸入の問題はない
が、液体注入と封止作業が必要で、工程が多くなる問題
があった。In addition, in the prior art Utility Model Application No. 61-3436, a diaphragm is provided, so there is no problem of acid solution infiltration, but there is a problem in that it requires liquid injection and sealing work, which increases the number of steps. .
本発明の目的は、ＡＱ主電極の酸液浸入を対策すると共
に、線材へ与える熱ストレスを極力少なくする半導体式
圧力センサ用ゲージを提供することにある。An object of the present invention is to provide a gauge for a semiconductor pressure sensor that prevents acid solution from entering the AQ main electrode and minimizes thermal stress applied to the wire.
上記目的を達成するために、半導体歪ゲージチップ上の
み耐酸性に優れる軟質レジンＡ（例えば信越化学製シリ
コーンゲル ＦＥ５３）を半球状に塗布し、更に、耐熱
性を損なうことなく耐酸性を向上させるため、前記半導
体歪ゲージチップ表面上の電極とケースに１体モールド
したリードフレーム間を跡続する線材が、耐寒性に優れ
る軟質レジンＢ（例えば、東し・ダウ・コーニング類５
Ｅ１８８０）に埋没する構造とする。In order to achieve the above objective, a soft resin A with excellent acid resistance (for example, Shin-Etsu Chemical's silicone gel FE53) is applied in a hemispherical shape only on the semiconductor strain gauge chip, and the acid resistance is further improved without impairing heat resistance. Therefore, the wire running between the electrodes on the surface of the semiconductor strain gauge chip and the lead frame molded into the case is made of soft resin B with excellent cold resistance (for example, Toshi, Dow, Corning type 5).
E1880).
半導体歪ゲージチップ上の電極腐食原因のひとつは、線
材及び半導体歪ゲージチップと軟質レジンＡの境界面か
ら酸液が浸入し、前記電極まで到達するためである。よ
って、半導体歪ゲージチツ一
プ、及び、線材を軟質レジンＢで埋没させれば、境界面
からの酸液浸入は対策できる。また、軟質レジンＢは耐
寒性に優れるもの（東し・ダウ・コニング ５Ｅ１８８
０等）を採用すれば、線材へ与える熱ストレスの影響が
少なく、耐熱性を損なわない。One of the causes of corrosion of the electrodes on the semiconductor strain gauge chip is that the acid solution infiltrates from the interface between the wire and the semiconductor strain gauge chip and the soft resin A and reaches the electrodes. Therefore, by burying the semiconductor strain gauge chip and the wire in the soft resin B, it is possible to prevent acid solution from entering from the interface. In addition, soft resin B has excellent cold resistance (Toshi Dow Conning 5E188
0, etc.), the influence of thermal stress on the wire is small and the heat resistance is not impaired.
以下、本発明の実施例を第１図〜第３図により説明する
。第１図は、第２図のゲージ実施例を採用した場合の、
圧力センサ全体斜視図でゲージ組１の微小出力電圧を増
幅回路が具備されるハイブリッドＩＣ２で増幅し、圧力
センサの出力電圧としている。Embodiments of the present invention will be described below with reference to FIGS. 1 to 3. Fig. 1 shows the case where the gauge embodiment shown in Fig. 2 is adopted.
In the overall perspective view of the pressure sensor, a minute output voltage of a gauge set 1 is amplified by a hybrid IC 2 equipped with an amplifier circuit, and is used as an output voltage of the pressure sensor.
第１の実施例を第２図で説明する。半導体歪ゲージチッ
プ３と支持台４を接合したものをベース５へ接着剤６で
固定し、更に、リードフレーム７を１体モールドしたケ
ーシング８は、前記ベース５へ接着固定する。その後、
前記半導体歪ゲージチップ３の表面に形成した電極と前
記リードフレーム７間を線材（例えばφ３０μｍの金線
）９で接続する。A first embodiment will be explained with reference to FIG. A semiconductor strain gauge chip 3 and a support base 4 joined together are fixed to a base 5 with an adhesive 6, and a casing 8 in which a lead frame 7 is molded is fixed to the base 5 with an adhesive. after that,
The electrode formed on the surface of the semiconductor strain gauge chip 3 and the lead frame 7 are connected by a wire 9 (for example, a gold wire with a diameter of 30 μm) 9.
更に、耐酸性軟質レジンＡ（例えば、信越化学製シリコ
ーンゲル 形式；ＦＥ５３）１０を前記半導体歪ゲージ
チップ３上のみ塗布する。Furthermore, acid-resistant soft resin A (for example, silicone gel type FE53 manufactured by Shin-Etsu Chemical Co., Ltd.) 10 is applied only onto the semiconductor strain gauge chip 3.
耐酸性軟質レジンとは、耐硝酸性、耐硫酸性。Acid resistant soft resin is nitric acid resistant and sulfuric acid resistant.
耐塩酸性に優れ、針入度が規格ＡＳＴＭＤ−１４０３の
方法で４０〜７５のレジンである。The resin has excellent hydrochloric acid resistance and has a penetration rate of 40 to 75 according to standard ASTM D-1403.
更に、耐寒性軟質レジンＢ（例えば、東し・ダウ・コー
ニング類 形式５Ｅ１８８０） １１を塗布し、前記
線材９を埋没させる。Furthermore, cold-resistant soft resin B (for example, Toshi, Dow, Corning type 5E1880) 11 is applied, and the wire rod 9 is buried.
耐寒性軟質レジンとは、針入度が、規格ＡＳＴＭＤ１４
０３の方法で、８５以下のレジンである。Cold-resistant soft resin has a penetration level that meets the standard ASTM D14.
03 method, the resin is 85 or less.
更に、前記ケーシング８ヘポート１２を接着剤６で固定
する。Furthermore, the port 12 to the casing 8 is fixed with adhesive 6.
第２の実施例を第３図で説明する。半導体歪ゲージチッ
プ３と支持台４を接合したものを、導体膜１３を具備す
る絶縁ベース（例えば、アルミナ。A second embodiment will be explained with reference to FIG. The semiconductor strain gauge chip 3 and the support base 4 are bonded together on an insulating base (for example, alumina) having a conductive film 13.
炭化シリコン、シリコン等）１４へ接着剤６で固定し、
前記半導体歪ゲージチップ３へ形成した電極と前記絶縁
ベース１４へ形成した導体膜１３間を線材９で接続する
。更に、ケース１４を接着剤６で固定後、耐酸性軟質レ
ジンＡ １．０を、前記半導体歪ゲージチップ３上のみ
塗布する。更に、耐寒性軟質レジンＢｌｌを塗布し、前
記線材９を埋没させる。(silicon carbide, silicone, etc.) 14 with adhesive 6,
A wire 9 connects the electrode formed on the semiconductor strain gauge chip 3 and the conductor film 13 formed on the insulating base 14. Furthermore, after fixing the case 14 with adhesive 6, acid-resistant soft resin A 1.0 is applied only onto the semiconductor strain gauge chip 3. Furthermore, a cold-resistant soft resin Bll is applied to bury the wire 9.
第１及び、第２の実施例によれば、耐熱性を損なうこと
なく耐酸性を向上させる効果がある。According to the first and second examples, there is an effect of improving acid resistance without impairing heat resistance.
本発明によれば、線材９を耐寒性軟質レジンＢｌｌへ埋
没させることで、線材９及び半導体歪ゲージチップ３表
面から酸液が浸入したくなるため、電極の酸腐食防止効
果がある。According to the present invention, by embedding the wire rod 9 in the cold-resistant soft resin Bll, the acid solution tends to enter from the wire rod 9 and the surface of the semiconductor strain gauge chip 3, so that there is an effect of preventing acid corrosion of the electrodes.
また、軟質レジンＢｌｌによる線材９への熱ストレス発
生は、耐寒性軟質レジン（例えば、東し・ダウ・コーニ
ング類 ５Ｅ１８８０）を採用することにより解決され
る。Further, the occurrence of thermal stress on the wire rod 9 due to the soft resin Bll can be solved by employing a cold-resistant soft resin (for example, Toshi/Dow/Corning 5E1880).
第１図は圧力センサの全体斜視図、第２図は本発明の第
１実施例のゲージ部縦断面図、第３図は本発明の第２実
施例のゲージ部縦断面図である。FIG. 1 is an overall perspective view of a pressure sensor, FIG. 2 is a longitudinal cross-sectional view of a gauge portion of a first embodiment of the present invention, and FIG. 3 is a longitudinal cross-sectional view of a gauge portion of a second embodiment of the present invention.
Claims (2)
プを収納するケースのリードフレームとを線材で接続さ
れた半導体圧力センサにおいて、前記半導体歪ゲージチ
ップ上のみ、耐酸性軟質レジンを塗布し、更に、耐寒性
軟質レジンを塗布し、前記線材を埋没させたことを特徴
とする半導体式圧力センサ。1. In a semiconductor pressure sensor in which an electrode on a semiconductor strain gauge chip and a lead frame of a case housing the strain gauge chip are connected by a wire, an acid-resistant soft resin is coated only on the semiconductor strain gauge chip, and a cold-resistant resin is applied. 1. A semiconductor pressure sensor, characterized in that a soft resin is coated and the wire rod is buried therein.
ージチップを接合される絶縁ベース、該絶縁ベースに導
体膜が形成され、前記半導体歪ゲージチップの電極と該
絶縁ベースの導体膜を線材で接続された半導体式圧力セ
ンサにおいて、前記半導体歪ゲージチップ上のみ、耐酸
性軟質レジンを塗布し、更に耐寒性軟質レジンを塗布し
、前記線材を埋没させたことを特徴とする半導体式圧力
センサ。2. An electrode on a semiconductor strain gauge chip, an insulating base to which the semiconductor strain gauge chip is joined, a conductive film is formed on the insulating base, and the electrode of the semiconductor strain gauge chip and the conductive film of the insulating base are connected with a wire. A semiconductor pressure sensor characterized in that an acid-resistant soft resin is coated only on the semiconductor strain gauge chip, a cold-resistant soft resin is further coated, and the wire is buried.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24401090A JPH04125438A (en) | 1990-09-17 | 1990-09-17 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24401090A JPH04125438A (en) | 1990-09-17 | 1990-09-17 | Semiconductor pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04125438A true JPH04125438A (en) | 1992-04-24 |
Family
ID=17112373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24401090A Pending JPH04125438A (en) | 1990-09-17 | 1990-09-17 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04125438A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998000691A1 (en) * | 1996-06-28 | 1998-01-08 | Siemens Aktiengesellschaft | Semiconductor device |
| WO1998000690A1 (en) * | 1996-06-28 | 1998-01-08 | Siemens Aktiengesellschaft | Pressure sensor component mounted on the insertion surface of a circuit board |
| JP2010122037A (en) * | 2008-11-19 | 2010-06-03 | Denso Corp | Pressure sensor |
-
1990
- 1990-09-17 JP JP24401090A patent/JPH04125438A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998000691A1 (en) * | 1996-06-28 | 1998-01-08 | Siemens Aktiengesellschaft | Semiconductor device |
| WO1998000690A1 (en) * | 1996-06-28 | 1998-01-08 | Siemens Aktiengesellschaft | Pressure sensor component mounted on the insertion surface of a circuit board |
| JP2000513446A (en) * | 1996-06-28 | 2000-10-10 | シーメンス アクチエンゲゼルシヤフト | Pressure sensor component that can be assembled on the mounting surface of a printed wiring board |
| JP2010122037A (en) * | 2008-11-19 | 2010-06-03 | Denso Corp | Pressure sensor |
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