JPH04123061U - Beam extraction electrode structure of charged particle beam generator - Google Patents
Beam extraction electrode structure of charged particle beam generatorInfo
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- JPH04123061U JPH04123061U JP2890491U JP2890491U JPH04123061U JP H04123061 U JPH04123061 U JP H04123061U JP 2890491 U JP2890491 U JP 2890491U JP 2890491 U JP2890491 U JP 2890491U JP H04123061 U JPH04123061 U JP H04123061U
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- electrode structure
- beam extraction
- charged particle
- plasma
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- 238000000605 extraction Methods 0.000 title claims abstract description 44
- 239000002245 particle Substances 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000004020 conductor Substances 0.000 claims abstract description 6
- 239000011810 insulating material Substances 0.000 claims abstract description 5
- 239000000284 extract Substances 0.000 abstract description 4
- 238000006073 displacement reaction Methods 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 description 19
- 238000010884 ion-beam technique Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 101000582320 Homo sapiens Neurogenic differentiation factor 6 Proteins 0.000 description 1
- 102100030589 Neurogenic differentiation factor 6 Human genes 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Abstract
(57)【要約】
【目的】 電極の位置ずれや変形を防いでビーム引出し
効率を確保すると共に、薄い電極および狭い電極間隔を
実現して低エネルギービームの引出し効率を向上する。
【構成】 プラズマ室１１に面して設けられ、プラズマ
室１１で生成されたプラスマから荷電粒子を引出すため
の荷電粒子ビーム発生装置のビーム引出し電極構造にお
いて、絶縁性材料からなる基板１３の両面に、それぞれ
導電性材料からなる膜状の電極１４，１５を形成したこ
とを特徴としている。
(57) [Summary] [Purpose] To ensure beam extraction efficiency by preventing electrode displacement and deformation, and to improve low-energy beam extraction efficiency by realizing thin electrodes and narrow electrode spacing. [Structure] In a beam extraction electrode structure of a charged particle beam generator that is provided facing a plasma chamber 11 and extracts charged particles from plasma generated in the plasma chamber 11, a beam extraction electrode structure is provided on both sides of a substrate 13 made of an insulating material. , is characterized in that film-like electrodes 14 and 15 are each formed of a conductive material.
Description
【０００１】0001
本考案は、高密度放電プラズマから電場によって荷電粒子ビームを引出す荷電 粒子ビーム発生装置に係り、特にそのビーム引出し部に設けられる電極構造の改 良に関するものである。 This invention uses a charged particle beam to be extracted from a high-density discharge plasma using an electric field. Regarding particle beam generators, in particular, improvements to the electrode structure provided in the beam extraction section. It is about good.
【０００２】0002
図４には、従来の荷電粒子ビーム発生装置のビーム引出し電極構造が示されて いる。図において、１はプラズマを生成するプラズマ室で、チェンバ２により区 画されている。チェンバ２のビーム引出し部即ち支持部３には、導電性材料から なる２枚の電極４，５が、絶縁のためのスペーサ６を介して順に重ね合わせられ 、ボルト７等により固定されている。 Figure 4 shows the beam extraction electrode structure of a conventional charged particle beam generator. There is. In the figure, 1 is a plasma chamber that generates plasma, which is separated by chamber 2. It is depicted. The beam extraction part or support part 3 of the chamber 2 is made of a conductive material. Two electrodes 4 and 5 are stacked one on top of the other with a spacer 6 in between for insulation. , bolts 7, etc.
【０００３】0003
ところで、上述したビーム引出し電極構造にあっては、所定のビーム形状で荷 電粒子を引出すために、各電極４，５に形成されたビーム引出し用穴８，９の位 置関係を所定に保たなければならない。しかし従来は、電極４，５を独立して製 作し組付けているため、ビーム引出し用穴８，９の位置関係を正確に合わせるに は、高い加工精度および組付け精度が必要となる。また、電極４，５を組付けた 後でも、ビーム引出し時の発熱に起因して電極４，５の取付位置がずれたり、電 極４，５自身が変形することがあり、予期したビーム形状が得られないばかりか 、引出し効率を低下させることもあった。 By the way, in the above-mentioned beam extraction electrode structure, a predetermined beam shape can be used to In order to extract the electric particles, the positions of the beam extraction holes 8 and 9 formed in each electrode 4 and 5 are The positioning relationship must be maintained as specified. However, conventionally, electrodes 4 and 5 were manufactured independently. Because it is manufactured and assembled, it is difficult to accurately align the beam extraction holes 8 and 9. requires high processing and assembly accuracy. In addition, electrodes 4 and 5 were assembled. Even after the beam extraction, the mounting positions of electrodes 4 and 5 may shift due to heat generated during beam extraction, and the Poles 4 and 5 themselves may be deformed, and not only will the expected beam shape not be obtained. , which could also reduce withdrawal efficiency.
【０００４】 一方、比較的低いエネルギービームを効率良く引出すためには、各電極４，５ を薄くすると共にこれら電極４，５間隔を狭めなければならない。しかし、従来 のように電極４，５を個別に形成すると、その機械的強度、加工精度および組付 け精度上から、電極４，５の薄肉化等には限界があった。0004 On the other hand, in order to efficiently extract a relatively low energy beam, it is necessary to It is necessary to make the electrodes thinner and narrow the distance between these electrodes 4 and 5. However, conventionally If the electrodes 4 and 5 are formed separately as shown in FIG. There is a limit to the thinning of the electrodes 4 and 5 due to the precision of the cutting.
【０００５】 本考案は上記事情を考慮してなされたもので、その目的は、電極の位置ずれや 変形に起因したビーム引出し効率の低下を防止できると共に、薄い電極および狭 い電極間隔を可能にして低エネルギービームをも効率良く引出せる荷電粒子ビー ム発生装置のビーム引出し電極構造を提供することにある。[0005] The present invention was developed in consideration of the above circumstances, and its purpose is to prevent the positional deviation of the electrodes. In addition to preventing a decrease in beam extraction efficiency due to deformation, thin electrodes and narrow A charged particle beam that enables a narrow electrode spacing and efficiently extracts low-energy beams. An object of the present invention is to provide a beam extraction electrode structure for a beam generator.
【０００６】[0006]
上記目的を達成するために本考案は、プラズマ室に面して設けられ、プラズマ 室で生成されたプラズマから荷電粒子を引出すための荷電粒子ビーム発生装置の ビーム引出し電極構造において、絶縁性材料からなる基板の両面に、それぞれ導 電性材料からなる膜状の電極を形成したものである。 In order to achieve the above object, the present invention is provided facing the plasma chamber, and the plasma A charged particle beam generator for extracting charged particles from plasma generated in a chamber. In the beam extraction electrode structure, conductors are placed on both sides of the substrate made of insulating material. A film-like electrode made of an electrically conductive material is formed.
【０００７】[0007]
絶縁性材料からなる基板の両面に、それぞれ電極を一体形成することで、ビー ム引出し時にも電極の位置ずれや変形を生じることなく、２枚の電極の位置関係 を常に安定に保つことができる。しかも、基板上への電極の形成は、スパッタリ ング、蒸着などの薄膜生成技術により行えるため、電極を極めて薄く形成でき、 ひいては電極間隔を狭めることもできる。 By integrally forming electrodes on both sides of the substrate made of insulating material, the beam The positional relationship between the two electrodes can be maintained without causing any displacement or deformation of the electrodes even when the membrane is pulled out. can always be kept stable. Moreover, the electrodes can be formed on the substrate using sputtering. This can be done using thin film generation techniques such as thin film deposition and vapor deposition, making it possible to form extremely thin electrodes. Furthermore, the electrode spacing can also be narrowed.
【０００８】[0008]
以下、本考案の一実施例を添付図面に基づいて説明する。 An embodiment of the present invention will be described below with reference to the accompanying drawings.
【０００９】 図２には、正電荷の粒子を引出すようにした荷電粒子ビーム発生装置 (イオン 源) が示されている。図において、１０は図示しない真空容器内に設置されたイ オンチェンバで、その内部にはプラズマ室１１が区画形成されている。プラズマ 室１１はプラズマが生成される室であり、例えばマイクロ波，ＲＦあるいは直流 放電等を起こさせて高密度放電プラズマを生成しうるようになっている。このプ ラズマから所定の正イオンを引出すために、イオンチェンバ１０は加速電圧印加 用電源１７を通して真空容器 (図示せず) に接地されて、正電位にバイアスされ ている。[0009] Figure 2 shows a charged particle beam generator (ion beam generator) that extracts positively charged particles. source) is shown. In the figure, 10 is an engine installed in a vacuum container (not shown). It is an on-chamber, and a plasma chamber 11 is sectioned inside. plasma Chamber 11 is a chamber in which plasma is generated, for example by microwave, RF or direct current. It is designed to generate high-density discharge plasma by causing discharge or the like. This program In order to extract predetermined positive ions from the plasma, the ion chamber 10 applies an accelerating voltage. It is grounded to a vacuum vessel (not shown) through a power supply 17 and biased to a positive potential. ing.
【００１０】 イオンチェンバ１０のビーム引出し部には、イオンビームを所定の形状にコン トロールして引出すためのビーム引出し電極構造１２がプラズマ室１１に面して 設けられている。この電極構造１２は、絶縁性材料よりなる基板１３の両面に、 それぞれ導電性材料よりなる電極１４，１５を一体形成することで、３層構造と されている。具体的には、耐熱性に優れたセラミック系材料で基板１３を形成し 、この基板１３の表裏両面にそれぞれグラファイト、Ｗ (タングステン) あるい はＴａ (タンタル) などの高融点材料をスパッタリングあるいは蒸着などにより コーティングして膜状の電極１４，１５を形成している。0010 The beam extractor of the ion chamber 10 has an ion beam that is shaped into a predetermined shape. A beam extraction electrode structure 12 for trolling and extraction faces the plasma chamber 11. It is provided. This electrode structure 12 is provided on both sides of a substrate 13 made of an insulating material. By integrally forming the electrodes 14 and 15 each made of a conductive material, a three-layer structure is achieved. has been done. Specifically, the substrate 13 is formed of a ceramic material with excellent heat resistance. , graphite, W (tungsten) or is made by sputtering or vapor deposition of a high melting point material such as Ta (tantalum). Film-like electrodes 14 and 15 are formed by coating.
【００１１】 こうして一体構造とされたビーム引出し電極構造１２には、図１に示すように 、イオンビームを通過させるためのビーム引出し用穴１６が複数形成されている 。各ビーム引出し用穴１６では、その電極１４，１５に対応する穴部１６ａ，１ ６ｂと基板１３に対応する穴部１６ｃとが同じ大きさとされているが、これらの 内壁に導電性の汚れが付着して電極１４，１５間の絶縁性を損なわないように、 電極１４，１５の穴部１６ａ，１６ｂを基板１３の穴部１６ｃよりも若干大きめ に形成してもよい。[0011] The integrated beam extraction electrode structure 12 has the structure shown in FIG. , a plurality of beam extraction holes 16 are formed for passing the ion beam. . In each beam extraction hole 16, hole portions 16a, 1 corresponding to the electrodes 14, 15 are provided. 6b and the hole 16c corresponding to the board 13 are said to have the same size, but these To prevent conductive dirt from adhering to the inner wall and impairing the insulation between the electrodes 14 and 15, The holes 16a and 16b of the electrodes 14 and 15 are slightly larger than the hole 16c of the substrate 13. It may be formed into
【００１２】 なお、図２に示すように、ビーム引出し電極構造１２のプラズマ室１１に面す る電極１４は、プラズマのイオン引出し面を決定すべく電位的に浮遊状態とされ 、他方、電極１５は、所定のレンズ効果を得ると共に負電荷粒子のプラズマ室１ １への逆流を防止すべく、減速電圧印加用電源１８を通して真空容器 (図示せず ) に接地されている。0012 Note that, as shown in FIG. 2, the beam extraction electrode structure 12 facing the plasma chamber 11 The electrode 14 is placed in a potential floating state to determine the ion extraction surface of the plasma. , on the other hand, the electrode 15 obtains a predetermined lens effect and also prevents negatively charged particles from entering the plasma chamber 1. In order to prevent backflow to the vacuum container (not shown), ) is grounded.
【００１３】 しかして、イオンチェンバ１０および電極１５をそれぞれ電源１７，１８によ り正・負にバイアスすると、プラズマ室１１で生成されたプラズマから所定の正 イオンが放出され、この放出されたイオンがビーム引出し用穴１６を通して引出 されてくる。この引出し用穴１６を通過する際に、イオンビームは発散・集束等 コントロールされるが、このとき電極１４，１５の発熱に起因して変形や取付位 置のずれがあると、ビームコントロールできなくなり、引出し効率の損失を招い てしまう。しかし本実施例では、電極１４，１５がそれぞれ基板１３の表裏面に 一体形成されているため、これら電極１４，１５が変形したり、取付け位置がず れることなく、両電極１４，１５の穴部１６ａ，１６ｂの位置関係を適性に保つ ことができる。したがって、常に安定かつ確実にイオンビームを引出すことがで きる。[0013] Thus, the ion chamber 10 and the electrode 15 are powered by power supplies 17 and 18, respectively. When the bias is positive or negative, the plasma generated in the plasma chamber 11 is biased to a certain positive value. Ions are emitted, and the ejected ions are extracted through the beam extraction hole 16. It will be done. When passing through this extraction hole 16, the ion beam diverges, focuses, etc. However, at this time, due to heat generation of the electrodes 14 and 15, deformation and mounting position may occur. Misalignment will result in loss of beam control and loss of extraction efficiency. I end up. However, in this embodiment, the electrodes 14 and 15 are provided on the front and back surfaces of the substrate 13, respectively. Since these electrodes 14 and 15 are integrally formed, there is no possibility that these electrodes 14 and 15 may be deformed or their mounting positions may be misplaced. The positional relationship between the holes 16a and 16b of both electrodes 14 and 15 is maintained appropriately without being be able to. Therefore, the ion beam can always be extracted stably and reliably. Wear.
【００１４】 しかも、電極１４，１５を基板１３上に一体形成することで、電極１４，１５ には機械的強度が要求されず、そのため電極１４，１５を薄膜生成技術を利用し て極めて薄く形成でき、これに伴って電極１４，１５の間隔を狭めることもでき る。よって、比較的低いエネルギーのイオンビームをも効率良く引出すことがで きる。[0014] Moreover, by integrally forming the electrodes 14 and 15 on the substrate 13, the electrodes 14 and 15 Mechanical strength is not required for the electrodes 14 and 15, therefore, the electrodes 14 and 15 are formed using thin film formation technology. The electrodes 14 and 15 can be formed extremely thin, and the distance between the electrodes 14 and 15 can be narrowed accordingly. Ru. Therefore, even relatively low energy ion beams can be extracted efficiently. Wear.
【００１５】 次に、低エネルギーイオンビームの引出し効率の向上について考えてみる。[0015] Next, let's consider improving the extraction efficiency of low-energy ion beams.
【００１６】 通常、プラズマから引出し可能なイオン電流密度、即ちイオン飽和電流密度Ｊ は、[0016] Usually, the ion current density that can be extracted from the plasma, i.e., the ion saturation current density J teeth,
【００１７】[0017]
【数１】 [Math 1]
【００１８】 と表される。ここで、ｎｉはプラズマ密度、Ｚはイオン価数、ｅは素電荷、ｋは ボルツマン定数、ｍｉはイオン質量、Ｔe は電子温度である。[0018] It is expressed as Here, ni is plasma density, Z is ion valence, e is elementary charge, and k is Boltzmann's constant, mi is the ion mass, and Te is the electron temperature.
【００１９】 また、このときイオンシース距離ｄｓは、引出し電圧をＶとすると、[0019] In addition, at this time, the ion sheath distance ds is as follows, assuming that the extraction voltage is V.
【００２０】[0020]
【数２】 [Math 2]
【００２１】 である。[0021] It is.
【００２２】 一方、プラズマのイオン引出し面は、イオンシース距離ｄｓと電極間隔ｄとの 関係により次のように変化する。すなわち、 ｄｓ＞ｄのときイオン引出し面 は電極に対して凹状、 ｄｓ＝ｄのとき電極に対して平行、 ｄｓ＜ｄのと き電極に対して凸状となる。しかし、ビーム引出し光学上、発散角の少ないビー ムを引出すことが望ましく、そのためにはｄｓとｄとをほぼ等しくする必要があ る。[0022] On the other hand, the ion extraction surface of the plasma is defined by the ion sheath distance ds and the electrode spacing d. It changes as follows depending on the relationship. That is, when ds>d, the ion extraction surface is concave to the electrode, parallel to the electrode when ds=d, and parallel to the electrode when ds<d. It has a convex shape with respect to the electrode. However, due to beam extraction optics, the beam with a small divergence angle It is desirable to bring out the system, and for that purpose, it is necessary to make ds and d almost equal. Ru.
【００２３】 今、引出し電流（上記数１におけるＪ）を上げるためにプラズマ密度ｎｉを上 げると、上記数２よりイオンシース距離ｄｓが小さくなることがわかる。また、 低エネルギービームを得るために引出し電圧Ｖを下げても、ｄｓが小さくなるこ とがわかる。そのため、上述したようにｄｓとｄとをほぼ等しくするには、ｄｓ に応じて電極間隔ｄも小さくしなければならない。[0023] Now, in order to increase the extraction current (J in equation 1 above), increase the plasma density ni. It can be seen from Equation 2 above that the ion sheath distance ds becomes smaller. Also, Even if the extraction voltage V is lowered to obtain a low energy beam, ds may become smaller. I understand. Therefore, as mentioned above, in order to make ds and d approximately equal, ds The electrode spacing d must also be reduced accordingly.
【００２４】 一例として、ｎｉ＝１０11 cm -3、Ｚ＝１、Ｔe ＝１０ｅＶ、Ｖ＝２０Ｖとす ると、ｄｓ＝0.013 cmとなり、電極間隔ｄも0.013 cm前後にしなければならなず 、電極を個別に製作する従来技術では明らかに困難である。しかし、本考案のよ うに薄膜生成技術を適用して電極を基板上に形成すれば、より理想的な条件にす ることができる。As an example, if ni = 10 11 cm -3 , Z = 1, Te = 10 eV, and V = 20 V, then ds = 0.013 cm, and the electrode spacing d must also be around 0.013 cm. This is clearly difficult to achieve with the prior art method of individual manufacturing. However, if the electrodes are formed on the substrate by applying thin film formation technology as in the present invention, more ideal conditions can be achieved.
【００２５】 なお、上記実施例では、ビーム引出し電極構造１２に複数のビーム引出し用穴 １６を設けたが、用途によっては１つの穴でもよく、さらにはスリットであって もよい。また、上記実施例ではイオンビームを引出す例について説明したが、本 考案はイオンに限らず電荷を持った粒子ならば引出し可能である。例えば、図２ のイオンチェンバ１０および電極１５にそれぞれ上述とは逆の正・負バイアスを かければ電子ないし負イオンまたはその両方を引出すことができる。さらに、本 考案のビーム引出し電極構造は図２に示した荷電粒子ビーム発生装置に限らず、 他の構造のものにも適用できる。例えば、図３に示す３枚電極構造の荷電粒子ビ ーム発生装置にも適用することができる。この場合、本電極構造１２とプラズマ 室１１との間にグラファイトや高融点金属からなる電極２０を設ければよい。な お、図３の(a) と(b) は電源１７によってバイアスをかける場所が異なる場合で ある。[0025] In the above embodiment, the beam extraction electrode structure 12 has a plurality of beam extraction holes. 16, but depending on the purpose it may be just one hole or even a slit. Good too. Also, in the above embodiment, an example of extracting an ion beam was explained, but in this example, The idea is that any charged particle can be extracted, not just ions. For example, Figure 2 Positive and negative biases opposite to those described above are applied to the ion chamber 10 and electrode 15, respectively. When applied, electrons, negative ions, or both can be extracted. Furthermore, the book The invented beam extraction electrode structure is not limited to the charged particle beam generator shown in Figure 2. It can also be applied to other structures. For example, a charged particle beam with a three-electrode structure shown in Fig. It can also be applied to a wave generator. In this case, the present electrode structure 12 and the plasma An electrode 20 made of graphite or a high melting point metal may be provided between the chamber 11 and the chamber 11 . Na In Figure 3 (a) and (b), the bias is applied at different locations depending on the power supply 17. be.
【００２６】[0026]
以上要するに本考案によれば、基板の両面にそれぞれ電極を一体的に形成した ので、電極の位置ずれや変形を防止して、ビーム引出し効率を確保することがで きる。しかも、電極の薄肉化および電極間隔の縮小化が図れ、低エネルギビーム に対する引出し効率を飛躍的に向上できる。 In summary, according to the present invention, electrodes are integrally formed on both sides of the substrate. Therefore, it is possible to prevent electrode misalignment and deformation and ensure beam extraction efficiency. Wear. In addition, the electrodes can be made thinner and the electrode spacing can be reduced, resulting in a low-energy beam. Dramatically improves withdrawal efficiency.
【図１】本考案ビーム引出し電極構造の一実施例を示す
図で、(a) は正面断面図、（ｂ）は平面図である。FIG. 1 is a diagram showing an embodiment of the beam extraction electrode structure of the present invention, in which (a) is a front sectional view and (b) is a plan view.
【図２】本考案のビーム引出し電極構造が適用された２
枚電極構造の荷電粒子ビーム発生装置を示す図である。[Figure 2] 2 to which the beam extraction electrode structure of the present invention is applied
FIG. 1 is a diagram showing a charged particle beam generator having a plate electrode structure.
【図３】本考案が適用された３枚電極構造の荷電粒子ビ
ーム発生装置を示す図である。FIG. 3 is a diagram showing a charged particle beam generator having a three-electrode structure to which the present invention is applied.
【図４】従来のビーム引出し電極構造を示す概略断面図
である。FIG. 4 is a schematic cross-sectional view showing a conventional beam extraction electrode structure.
１１ プラズマ室 １２ ビーム引出し電極構造 １３ 基板 １４，１５ 電極 １６ ビーム引出し用穴 11 Plasma chamber 12 Beam extraction electrode structure 13 Substrate 14,15 Electrode 16 Beam extraction hole
Claims (1)
室で生成されたプラズマから荷電粒子を引出すための荷
電粒子ビーム発生装置のビーム引出し電極構造におい
て、絶縁性材料からなる基板の両面に、それぞれ導電性
材料からなる膜状の電極を形成したことを特徴とする荷
電粒子ビーム発生装置のビーム引出し電極構造。Claim 1. In a beam extraction electrode structure of a charged particle beam generator provided facing a plasma chamber and for extracting charged particles from plasma generated in the plasma chamber, on both sides of a substrate made of an insulating material, A beam extraction electrode structure for a charged particle beam generator, characterized in that film-like electrodes each made of a conductive material are formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2890491U JPH04123061U (en) | 1991-04-24 | 1991-04-24 | Beam extraction electrode structure of charged particle beam generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2890491U JPH04123061U (en) | 1991-04-24 | 1991-04-24 | Beam extraction electrode structure of charged particle beam generator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04123061U true JPH04123061U (en) | 1992-11-06 |
Family
ID=31912905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2890491U Pending JPH04123061U (en) | 1991-04-24 | 1991-04-24 | Beam extraction electrode structure of charged particle beam generator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04123061U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002075232A (en) * | 2000-09-05 | 2002-03-15 | Showa Shinku:Kk | Large diameter ion source |
-
1991
- 1991-04-24 JP JP2890491U patent/JPH04123061U/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002075232A (en) * | 2000-09-05 | 2002-03-15 | Showa Shinku:Kk | Large diameter ion source |
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