JPH04116438A - Characteristic testing method of semiconductor pressure sensor - Google Patents
Characteristic testing method of semiconductor pressure sensorInfo
- Publication number
- JPH04116438A JPH04116438A JP23771090A JP23771090A JPH04116438A JP H04116438 A JPH04116438 A JP H04116438A JP 23771090 A JP23771090 A JP 23771090A JP 23771090 A JP23771090 A JP 23771090A JP H04116438 A JPH04116438 A JP H04116438A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- chamber
- semiconductor pressure
- pressure sensor
- sensors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 238000012360 testing method Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 claims description 13
- 238000012545 processing Methods 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体圧力センサの特性試験方法に関し、更
に詳述すれば、多数個の半導体圧力センサの特性試験を
一括的に行う方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for testing the characteristics of semiconductor pressure sensors, and more specifically, to a method for simultaneously testing the characteristics of a large number of semiconductor pressure sensors.
半導体圧力センサは、小型化が容易であると共に廉価に
構成でき、また、耐熱性、耐湿性及び耐振動性に優れ、
劣悪な環境下においても使用可能なことから、近年、特
に自動車用の圧力センサとして脚光を浴びている。Semiconductor pressure sensors are easy to miniaturize, can be constructed at low cost, and have excellent heat resistance, moisture resistance, and vibration resistance.
In recent years, pressure sensors have been in the spotlight, especially as pressure sensors for automobiles, because they can be used even in harsh environments.
第２図に示す如く半導体圧力センサ１は、外装ケース１
０内に立設された台座Ｉｌ上にセンサチップ１２を固設
してなり、外装ケース１０の一部を内外に貫通して形成
された導圧口１３を適宜の圧力測定位置に固定して用い
られる。センサチップ１２は、半導体チップの中央部を
薄肉化して受圧用のダイアフラムを構成し、このダイア
フラムの表面上に複数の拡散抵抗を形成したものであり
、これらの夫々にピエゾ抵抗効果により生じる抵抗値の
変化を媒介として、前記ダイアフラムに作用する圧力、
即ち、前記導圧口１３を経て導入される圧力を検出する
構成となっており、この検出に伴うセンサチップ１２の
出力は、前記拡散抵抗により構成されたブリッジの出力
電圧として、リート１４を経て外装ケース１０の外部に
取出される。As shown in FIG. 2, the semiconductor pressure sensor 1 has an outer case 1.
A sensor chip 12 is fixedly mounted on a pedestal Il that is set upright inside the sensor, and a pressure guiding port 13 formed by penetrating a part of the exterior case 10 inside and outside is fixed at an appropriate pressure measurement position. used. The sensor chip 12 consists of a pressure-receiving diaphragm made by thinning the central part of a semiconductor chip, and a plurality of diffused resistors formed on the surface of this diaphragm, each of which has a resistance value caused by a piezoresistance effect. the pressure acting on the diaphragm mediated by a change in;
That is, the configuration is such that the pressure introduced through the pressure guiding port 13 is detected, and the output of the sensor chip 12 accompanying this detection is passed through the REIT 14 as the output voltage of the bridge constituted by the diffusion resistor. It is taken out of the exterior case 10.
さて以上の如き構成の半導体圧力センサ１においては、
作用する圧力と得られる出力との関係、即ち出力特性が
、センーＩＪチップ１２におりる受圧ダイアフラムの肉
厚値及び前記拡散砥抗の抵抗値等、個々の製造条件によ
って異なる値の影響を受ｉすることから、得られた製品
に対して夫々の出力特性を確認するための特性試験を実
施する必要がある。Now, in the semiconductor pressure sensor 1 configured as above,
The relationship between the applied pressure and the output obtained, that is, the output characteristics, is affected by values that vary depending on individual manufacturing conditions, such as the wall thickness of the pressure receiving diaphragm passing through the sensor IJ chip 12 and the resistance value of the diffusion abrasive. Therefore, it is necessary to conduct characteristic tests on the obtained products to confirm their respective output characteristics.
第３図は、このような目的で行われる従来の特性試験方
法の実施状態を示す模式図である。本図に示す如〈従来
の特性試験は、恒温槽５内に配したテスｌ−トレー２０
上に試験対象となる多数の半導体圧カセンザ１．１・・
・を載置し、ごれらの前記導圧口１３を夫々、テストト
レー２０の略全域に旬って引き回された圧力導入管２１
の多数の支管’ ２２．２２・・の先端に締め付は固定
した後、前記圧力導入管２１の基端に接続した圧力制御
装置３にて種々の基準圧力を発生し７、この圧力を全て
の半導体圧力センサ］、１・・・に−括的に導入して、
各圧力下における夫々の出力をデータ処理装置４にて処
理し、この結果から各半導体圧カセンザ１，１・・・の
出力特性を得る手順にて実施されており、更に温度に対
する出力特性の変化を確認する場合、恒温槽５の内部温
度を種々に変更１−２で、各温度下にて同様の手順が繰
り返される。FIG. 3 is a schematic diagram showing the state of implementation of a conventional characteristic testing method performed for this purpose. As shown in this figure, in the conventional characteristic test, a test l-tray 20 placed in a constant temperature bath 5 is
Above are a number of semiconductor pressure sensors 1.1 to be tested.
A pressure introduction pipe 21 is placed on the test tray 20, and the pressure introduction ports 13 are routed over substantially the entire area of the test tray 20.
After tightening and fixing the ends of the numerous branch pipes 22, 22..., a pressure control device 3 connected to the base end of the pressure introducing pipe 21 generates various reference pressures 7, and all of these pressures are semiconductor pressure sensor], 1.
Each output under each pressure is processed by the data processing device 4, and the output characteristics of each semiconductor pressure sensor 1, 1, . . . are obtained from the results. To confirm this, the internal temperature of the constant temperature bath 5 is variously changed 1-2, and the same procedure is repeated at each temperature.
〔発明が解決しようとする課題］
とごろか以上の如き従来の′［！Ｊ性試験の実施に際し
ては、試験対象となる多くの〉１′力休ｊ」カセン゛す
１．１ ・を前記支管２２．２２・・に締め付り固定す
る繁雑な準備作業か要求され、多大の手間と時間とを要
する５１１点がある−１−８蹄めイ＝ｔ ’：Ｉ不足に
、Ｌり圧力洩れか／−１ｈした場合、所定の鵡？ｉｌ町
力か導入されす、正しい出力時１１が得られなくなる店
かあり、逆に過Ｊ度の締め（〈Ｊυかなされた場合、各
１′、 、ｆ２体圧カーレンザ１，１・・・の出力にご
の締め（＝１＋：ｌ応力の影響か仕して、同様に正しい
出カキ、冒牛が＋Ｆｊられ４Ｖりなる虞があって、多く
の゛１′勇体圧カセンリ１，１・・の特性試験を高村１
度にて行うことか難しいという問題があった。[Problem to be solved by the invention] The conventional ′[! When conducting the J-ability test, a complicated preparation work is required to tighten and fix the many 1' power rests 1.1 to be tested to the branch pipes 22, 22, and so on. There are 511 points that require a lot of effort and time. If il town power is introduced, there are stores where 11 cannot be obtained when the output is correct, and conversely, excessive tightening (〈Jυ is done, each 1', , f2 body pressure car lens 1, 1... Due to the influence of stress (=1+:l), there is a possibility that the correct output and output will be +Fj and 4V, and many Takamura 1 conducted a characteristic test of...
There was a problem that it was difficult to do it at the same time.
本発明は斯かる事情に迄ｙ］てなさ才＋、 ７；：もの
であり、ｉＢ備作業に要する手間及び時間が大幅に削減
されると共に、多くの半導体圧力センサの出力特性を高
精度にて確実に得ることか可能な半ｊ、ｎ体ｊ「カセン
ザの特性試験方法を捉供することをｆｉｔ的とする。The present invention overcomes these circumstances, and greatly reduces the effort and time required for iB preparation work, and improves the output characteristics of many semiconductor pressure sensors with high precision. The purpose of this study is to provide a method for testing the properties of the half-j, n-body j "casenza" that can be reliably obtained using the following methods.
本発明に係る半導体圧力センナの特性試験方法は、多数
個の半導体圧力センナを密閉チャンバ内に配し、この密
閉チャンバの内圧変更により各半導体圧カセンザへの作
用圧力を一括的に変更するものである。The method for testing the characteristics of semiconductor pressure sensors according to the present invention involves arranging a large number of semiconductor pressure sensors in a closed chamber, and changing the internal pressure of the closed chamber to collectively change the pressure applied to each semiconductor pressure sensor. be.
［作用］
本発明においては、試験対象となる多くの半導体圧カセ
ンリを密閉−ｙ−ヤンハ内に導入して所定位置に載置す
るだりで試験準備を実質的に完了することができ、その
後、前記密閉チャンバの内圧を変更した場合、この内圧
が前記半導体圧力センサ゛の夫々へ確実に作用するから
、この時の夫々の出力を処理するごとにより各半導体圧
カセンザの正確な出力特性か得られる。[Function] In the present invention, test preparation can be substantially completed by introducing a number of semiconductor pressure sensors to be tested into a sealed Y-Yancha and placing them at predetermined positions. When the internal pressure of the sealed chamber is changed, this internal pressure reliably acts on each of the semiconductor pressure sensors, so that accurate output characteristics of each semiconductor pressure sensor can be obtained by processing each output at this time.
（実施例〕
以下本発明をその実施例を示す図面に基づいて詳述する
。第１図は本発明に係る半導体圧力センサの特性試験方
法（以下本発明方法という）の実施状態を示す模式図で
ある。(Example) The present invention will be described in detail below based on drawings showing examples thereof. Fig. 1 is a schematic diagram showing the implementation state of the method for testing the characteristics of a semiconductor pressure sensor according to the present invention (hereinafter referred to as the method of the present invention). It is.
図示の如く本発明方法は、恒温槽５内に配設された密閉
チャンバ２、これに連通管６を介して接続された圧力制
御装置３、及びデータ処理装置４を備えてなる試験装置
を用いて行われる。そして試験対象となる多数個の半導
体圧力センサ１，１・・・は、前記密閉チャンバ２内に
図示しない導入口を経て導入されて夫々所定位置に載置
され、各載置位置に設りられた出力取出し用の図示し７
ない信号線を介して前記データ処理装置４に接続される
。As shown in the figure, the method of the present invention uses a test apparatus comprising a closed chamber 2 disposed in a constant temperature bath 5, a pressure control device 3 connected to the closed chamber 2 via a communication pipe 6, and a data processing device 4. will be carried out. A large number of semiconductor pressure sensors 1, 1, . Figure 7 for output output
The data processing device 4 is connected to the data processing device 4 via a signal line.
このとき、各半導体圧力セン復１，１・・・の導圧Ｉ−
＝１１３．１３・・・（第２図参照）は、密閉チャンバ
２の内部に開放したままにしておけばよく、従来必要で
あったこれらの締め付は作業が不要であり、全ての半導
体圧カセンザ１，１・・・の配置後に前記導入口を閉止
することにより試験準備が完了するから、従来に比して
準備作業が大幅に簡素化され、これに要する手間及び時
間の削減が可能となる。At this time, the guiding pressure I- of each semiconductor pressure sensor 1, 1...
=113.13... (see Figure 2) can be left open to the inside of the sealed chamber 2, and the tightening work that was previously required is unnecessary, and all semiconductor pressure is removed. Test preparation is completed by closing the introduction port after placing Kasenza 1, 1, etc., so the preparation work is greatly simplified compared to the past, and the effort and time required for this can be reduced. Become.
さて以」二の如く試験準備を完了した後、前記圧力制御
装置３にて所定の基準圧力を発生させると、これに前記
連通管６を介して接続された密閉チャンバ２の内圧もま
た前記基準圧力となり、この内圧が夫々の導圧口１３，
１．３・・・を介して半導体圧カセンザ１，１・・・内
に導入されて、夫々の内部に配されたセンサチップ１２
．１２・・・（第２図参照）に作用することになり、こ
れに応じて各半導体圧力センサ１，１・・・から前述の
如く発せられる出力がデータ処理装置４に与えられる。Now, after completing the test preparations as described in Section 2, when a predetermined reference pressure is generated in the pressure control device 3, the internal pressure of the sealed chamber 2 connected to this via the communication pipe 6 is also adjusted to the reference pressure. pressure, and this internal pressure is applied to each pressure guiding port 13,
The sensor chips 12 are introduced into the semiconductor pressure sensors 1, 1... through 1.3... and arranged inside each of them.
．． 12... (see FIG. 2), and in response, the outputs emitted from the respective semiconductor pressure sensors 1, 1... as described above are given to the data processing device 4.
データ処理装置４は、各半導体圧カセンザ１，１・・・
からの入力を圧力制御装置３におけるそのときの発生圧
力に対応させて夫々取込み、圧力制御装置３での一連の
基準圧力の発生を終了した後、夫々の基準圧力における
各半導体圧力センサ１，１・・・からの取込め結果に基
づいて夫々における作用圧力と出力との関係、即ち出力
特性を求める動作をなし、試験に携わる作業者は、ＣＲ
Ｔデイスプレィ、プリンタ等の図示しない表示装置上に
てこの結果を視認し、各半導体圧力センサ１，１・・・
の出力特性を知ることができる。なお温度に対する出力
特性の変化を確認する場合、従来と同様、恒温槽５の内
部温度を種々に変更して、該恒温槽５内に配された密閉
チャンバ２の内部温度を変更し、各温度下にて同様の手
順を繰り返せばよい。The data processing device 4 includes each semiconductor pressure sensor 1, 1...
After the pressure control device 3 has finished generating a series of reference pressures, each semiconductor pressure sensor 1, 1 at the respective reference pressure is The relationship between the working pressure and the output, that is, the output characteristics, is determined based on the results obtained from..., and the workers involved in the test
The results are visually confirmed on a display device (not shown) such as a T-display or a printer, and each semiconductor pressure sensor 1, 1...
You can know the output characteristics of. Note that when checking changes in output characteristics with respect to temperature, as in the past, the internal temperature of the thermostatic chamber 5 is varied, and the internal temperature of the closed chamber 2 disposed within the thermostatic chamber 5 is changed. You can repeat the same steps below.
即ち、以上の如き本発明方法によれば、圧力制御装置３
の動作による密閉チヤツク＼２の内圧変更に応じて全て
の半導体圧力センサ１，１・・・への作用圧力が一括的
に変更されるに際し、各半導体圧力センサ１，１・・・
に圧力制御装置３の発生圧力を確実に作用させることが
できると共に、半導体圧カセンザ１，１・・・は密閉チ
ャンバ２内部の所定位置に単に載置されるのみであり、
これらの出力に作用圧力以外の力の影響が生じる虞がな
く、データ処理装置４における前述の処理により常に作
用圧力と出力との正しい対応関係が得られ、正しい出力
特性の決定が安定してなされる。That is, according to the method of the present invention as described above, the pressure control device 3
When the working pressure on all the semiconductor pressure sensors 1, 1, . . . is changed at once in accordance with the change in the internal pressure of the sealed chuck \2 due to the operation of the semiconductor pressure sensors 1, 1, .
The pressure generated by the pressure control device 3 can be reliably applied to the semiconductor pressure sensor 1, 1, .
There is no possibility that these outputs will be influenced by forces other than the working pressure, and the above-described processing in the data processing device 4 always provides the correct correspondence between the working pressure and the output, and the correct output characteristics can be stably determined. Ru.
以上詳述した如く本発明方法においては、試験対象とな
る多数個の半導体圧力センサを密閉チャンバ内に配し、
この密閉チャンバの内圧変更により各半導体圧力センサ
への作用圧力を一括的に変更するから、試験準備の段階
にて従来必要であった導圧口の締め付は固定作業が不要
であり、準備作業に要する手間及び時間の大幅な削減が
可能となる上、試験中の半導体圧力センサへの作用圧力
を安定的に維持することができ、また各半導体圧力セン
サの出力に作用圧力以外の力の影響が生しることがなく
、正しい出力特性を高精度にて得ることができる等、本
発明は優れた効果を奏する。As detailed above, in the method of the present invention, a large number of semiconductor pressure sensors to be tested are arranged in a closed chamber,
By changing the internal pressure of this sealed chamber, the working pressure on each semiconductor pressure sensor is changed all at once, so there is no need to tighten the pressure guide ports, which was previously required at the test preparation stage. In addition to making it possible to significantly reduce the effort and time required for testing, it is possible to stably maintain the working pressure on the semiconductor pressure sensor during testing, and to prevent the influence of forces other than the working pressure on the output of each semiconductor pressure sensor. The present invention has excellent effects, such as being able to obtain correct output characteristics with high precision without causing any problems.
第１図は本発明方法の実施状態を示す模式図、第２図は
半導体圧力センサの一般的な内部構造を示す縦断面図、
第３図は従来の特性試験方法の実施状態を示す模式図で
ある。
１・・・半導体圧力センサ ２・・・密閉チヤツクｚ
３・・・圧力制御装置 ４・・・データ処理装置なお
、図中、同一符号は同一、又は相当部分を示す。
代理人 大 岩 増 雄
・データ処理装置
第
図
第
図FIG. 1 is a schematic diagram showing the implementation state of the method of the present invention, FIG. 2 is a longitudinal sectional view showing the general internal structure of a semiconductor pressure sensor,
FIG. 3 is a schematic diagram showing the state of implementation of a conventional characteristic testing method. 1... Semiconductor pressure sensor 2... Sealed chuck z
3...Pressure control device 4...Data processing device In the drawings, the same reference numerals indicate the same or corresponding parts. Agent Masuo Oiwa/Data processing equipment diagram
Claims (1)
に変更しつつ夫々の出力を調べ、各半導体圧力センサの
出力特性を求める半導体圧力センサの特性試験方法にお
いて、 前記半導体圧力センサを密閉チャンバ内に 配し、前記作用圧力の変更を、該密閉チャンバの内圧変
更により行うことを特徴とする半導体圧力センサの特性
試験方法。(1) In a semiconductor pressure sensor characteristic testing method for determining the output characteristics of each semiconductor pressure sensor by collectively changing the pressure applied to a large number of semiconductor pressure sensors and examining the output of each semiconductor pressure sensor, the semiconductor pressure sensor is sealed. A method for testing characteristics of a semiconductor pressure sensor, characterized in that the pressure sensor is placed in a chamber, and the working pressure is changed by changing the internal pressure of the sealed chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23771090A JPH04116438A (en) | 1990-09-06 | 1990-09-06 | Characteristic testing method of semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23771090A JPH04116438A (en) | 1990-09-06 | 1990-09-06 | Characteristic testing method of semiconductor pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04116438A true JPH04116438A (en) | 1992-04-16 |
Family
ID=17019356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23771090A Pending JPH04116438A (en) | 1990-09-06 | 1990-09-06 | Characteristic testing method of semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04116438A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002310838A (en) * | 2001-04-19 | 2002-10-23 | Akashi Corp | Pressure test device and pressure test method |
| JP2006029944A (en) * | 2004-07-15 | 2006-02-02 | Toyoda Mach Works Ltd | Electric trimming system |
-
1990
- 1990-09-06 JP JP23771090A patent/JPH04116438A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002310838A (en) * | 2001-04-19 | 2002-10-23 | Akashi Corp | Pressure test device and pressure test method |
| JP2006029944A (en) * | 2004-07-15 | 2006-02-02 | Toyoda Mach Works Ltd | Electric trimming system |
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