JPH04115531A - Chemical vapor growth device - Google Patents

Chemical vapor growth device

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Publication number
JPH04115531A
JPH04115531A JP23871190A JP23871190A JPH04115531A JP H04115531 A JPH04115531 A JP H04115531A JP 23871190 A JP23871190 A JP 23871190A JP 23871190 A JP23871190 A JP 23871190A JP H04115531 A JPH04115531 A JP H04115531A
Authority
JP
Japan
Prior art keywords
gas
wafer
film
hole
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23871190A
Other languages
Japanese (ja)
Inventor
Toru Yamaguchi
徹 山口
Kouichirou Tsutahara
晃一郎 蔦原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP23871190A priority Critical patent/JPH04115531A/en
Publication of JPH04115531A publication Critical patent/JPH04115531A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To enable a reactive generated film with a uniform film thickness to be formed on a wafer by providing a throttle for restricting gas at a gas blow-off hole at a position corresponding to a central part of a semiconductor wafer. CONSTITUTION:A tubular pin 11 is formed in nearly cylindrical shape entirely and its outer diameter is formed to have dimensions for achieving engagement into a large aperture part of a gas blow-out hole 5. Also, this tubular pin 11 is fitted to a gas blow-out hole 5a at a central part of a gas head 4 out of a number of gas blow-out holes 5 which are provided at the gas head 4 and an inner diameter of the pin 11 is changed according to film-forming conditions. Flow of reaction gas which is supplied to a central part of the semiconductor wafer is suppressed by a throttle (tubular pin) and adjusted according to film- forming conditions, a reactive generated film with a uniform film thickness can be formed on a semiconductor wafer.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体装置の製造プロセスのうち半導体ウェ
ハに反応生成膜を形成する成膜プロセスで使用する化学
気相成長装置に関し、特に反応ガス供給用ガスヘッドの
構造に関するものである。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a chemical vapor deposition apparatus used in a film forming process for forming a reaction product film on a semiconductor wafer in the manufacturing process of semiconductor devices, and particularly relates to This relates to the structure of the supply gas head.

〔従来の技術〕[Conventional technology]

従来のこの種の化学気相成長装置は第９図および第１０
図に示すように構成されていた。Conventional chemical vapor deposition equipment of this type is shown in FIGS. 9 and 10.
It was configured as shown in the figure.

第９図は従来の化学気相成長装置の概略構成を示す断面
図、第１０図は従来の化学気相成長装置のガスヘッドを
示す平面図である。これらの図において、１は半導体ウ
ェハ（以下、単にウェハという）、２はこのウェハ１を
保持する加熱用ステージである。このステージ２はウェ
ハ１をその下面に保持するように構成されており、その
平面形状はウェハ１のそれと略等しい形状に形成されて
いる。３は前記ステージ２を加熱してウェハ１を所定温
度に加熱するためのヒーターで、このヒーター３はステ
ージ２の上部に取付けられている。FIG. 9 is a sectional view showing a schematic configuration of a conventional chemical vapor deposition apparatus, and FIG. 10 is a plan view showing a gas head of the conventional chemical vapor deposition apparatus. In these figures, 1 is a semiconductor wafer (hereinafter simply referred to as a wafer), and 2 is a heating stage that holds this wafer 1. The stage 2 is configured to hold the wafer 1 on its lower surface, and its planar shape is approximately the same as that of the wafer 1. Reference numeral 3 denotes a heater for heating the stage 2 and the wafer 1 to a predetermined temperature, and this heater 3 is attached to the upper part of the stage 2.

４は前記ウェハ１に反応ガスＡを供給するためのガスヘ
ッドで、このガスヘッド４は、反応ガスＡが吹出される
ガス吹出し穴５が多数穿設されており、前記ステージ２
の下方にステージ２から間隔Ｂだけ隔てて配置されてい
る。また、このガスヘッド４はステージ２に対して同一
軸線上に配設され、ガスヘッド４の上面の中心がステー
ジ２のウェハ保持面の中心と一致するように位置づけら
れている。前記ガス吹出し穴５は、前記ステージ２に保
持されたウェハ１の外径と相当する範囲に配設され、各
ガス吹出し穴５は第１０図に示すように、ガスヘッド４
の上面にハニカム状に等間隔おいて開口されている。ま
た、このガス吹出し穴５はガスヘッド４の上面に開口す
る大口径部と、この大口径部の下側に一連に形成された
小口径部とから形成されており、各部の寸法は成膜条件
に適合するよう所定寸法をもって形成されている。Reference numeral 4 denotes a gas head for supplying the reactive gas A to the wafer 1, and this gas head 4 is provided with a large number of gas blowing holes 5 through which the reactive gas A is blown out.
It is arranged below the stage 2 at a distance B from the stage 2. Further, this gas head 4 is disposed on the same axis as the stage 2, and is positioned so that the center of the upper surface of the gas head 4 coincides with the center of the wafer holding surface of the stage 2. The gas blowing holes 5 are arranged in a range corresponding to the outer diameter of the wafer 1 held on the stage 2, and each gas blowing hole 5 is connected to a gas head 4 as shown in FIG.
There are openings arranged in a honeycomb pattern at equal intervals on the upper surface of the holder. Further, the gas blowing hole 5 is formed of a large diameter part that opens on the upper surface of the gas head 4, and a small diameter part that is formed in series below this large diameter part, and the dimensions of each part are determined by the film formation. It is formed with predetermined dimensions to suit the conditions.

６は前記ガスヘッド４等を収納して反応室を形成する反
応室壁、７は排気口である。この排気ロアは、前記ステ
ージ２の側部と対向する位置にステージ２０周方向に沿
って開口しており、この排気ロアを通って反応ガスＡが
反応室外へ排出されるように構成されている。なお、同
図中矢印Ｃは排気を示す。6 is a reaction chamber wall that houses the gas head 4 and the like to form a reaction chamber, and 7 is an exhaust port. This exhaust lower is opened along the circumferential direction of the stage 20 at a position facing the side of the stage 2, and is configured so that the reaction gas A is exhausted to the outside of the reaction chamber through this exhaust lower. . Note that arrow C in the figure indicates exhaust.

このように構成された従来の化学気相成長装置では、ス
テージ２で予め加熱されたウェハｌに対して、ガス吹出
し穴５から吹出された反応ガスＡを供給することにより
、ウェハ１上に反応生成膜を形成することができる。In the conventional chemical vapor deposition apparatus configured as described above, a reaction is caused on the wafer 1 by supplying the reaction gas A blown out from the gas blowing hole 5 to the wafer 1 that has been preheated in the stage 2. A generated film can be formed.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかるに、従来の化学気相成長装置においては、排気口
６がステージ２．ガスヘッド４の半径方向外側となる位
置であってこれらの周方向全域にわたって設けられてい
る関係から、ガスヘッド４の上面の中心に設けられたガ
ス吹出し穴５ａは、排気口６の全ての位置より最も離れ
た位置となるので、このガス吹出し穴５ａから吹出され
た反応ガスＡは排気され難（、ウェハ１の表面に沿って
漂っている時間が長くなる。このため、ウェハＩ上に形
成される反応生成膜は、ガス吹出し穴５ａと対向するウ
ェハ１の中心部で膜厚が厚くなるという問題があった。However, in the conventional chemical vapor deposition apparatus, the exhaust port 6 is connected to the stage 2. Since it is located at the radially outer side of the gas head 4 and is provided over the entire circumferential direction, the gas blowing hole 5a provided at the center of the upper surface of the gas head 4 is located at all positions of the exhaust port 6. Since the position is the farthest away, the reaction gas A blown out from this gas blowing hole 5a is difficult to exhaust (and the time it spends floating along the surface of the wafer 1 is longer. The problem is that the reaction product film becomes thicker at the center of the wafer 1 facing the gas blowout hole 5a.

なお、第９図および第１０図において５ｂは、多数のガ
ス吹出し穴５のうち前記ガス吹出し穴５ａよりガスヘッ
ド４の半径方向外側に位置するガス吹出し穴を示す。こ
の−例を第１１図に示す。In FIGS. 9 and 10, reference numeral 5b indicates a gas blowing hole located radially outward of the gas head 4 from the gas blowing hole 5a among the many gas blowing holes 5. An example of this is shown in FIG.

第１１図は従来の化学気相成長装置を使用した場合の反
応生成膜の膜厚分布を示す模式図である。FIG. 11 is a schematic diagram showing the film thickness distribution of a reaction product film when a conventional chemical vapor deposition apparatus is used.

同図に示すように、ウェハ１の中心部以外の部分の膜厚
が１００００人の場合、ウェハ１の中心部の膜厚では１
４０００人と厚くなる。この時の成膜条件としては、常
圧の化学気相成長装置を用い、反応ガスＡにＴＥ０１　
（テトラエトキシシラン）ガスと０３　（オゾン）ガス
、キャリアガスとしてＮＺ　　（窒素）ガスを用いた。As shown in the figure, if the film thickness at the part other than the center of wafer 1 is 10,000, the film thickness at the center of wafer 1 is 1
The number will increase to 4,000 people. The film forming conditions at this time were to use a chemical vapor deposition apparatus at normal pressure, and to use TE01 as the reaction gas A.
(tetraethoxysilane) gas, 03 (ozone) gas, and NZ (nitrogen) gas as a carrier gas.

また、装置の構成は第９図および第１０図に示した構造
とし、ステージ２の径は６＃で、ヒーター３によって４
００℃に加熱し、ギャップＢを７Ｂとした。ガス吹出し
穴５は、ガスヘッド４の上面におけるその中心点を含む
φ６“の範囲に形成し、φ４ｍｍの大口径部を１５鶴、
φ１．５　ｔｍの小口径部を５ｗｍとした。さらに、各
ガス吹出し穴５どうしの間隔を６１ｍとして、第１０図
に示すようにガス吹出し穴５をハニカム状に並設した。The configuration of the device is as shown in FIGS. 9 and 10, the stage 2 has a diameter of 6mm, and the heater 3
It was heated to 00° C. and the gap B was set to 7B. The gas blowout hole 5 is formed in a range of φ6" including the center point on the upper surface of the gas head 4, and the large diameter part of φ4mm is
The small diameter part of φ1.5tm was set to 5wm. Further, the gas blowing holes 5 were arranged in a honeycomb shape, with the interval between the gas blowing holes 5 being 61 m, as shown in FIG.

この装置で反応ガスＡ中のキャリアＮ２ガス流量を２０
ｊｌ！／ｗｌｉｎとして成膜を行ない、第１１図で示す
膜厚分布を得た。With this device, the carrier N2 gas flow rate in reaction gas A was set to 20
jl! /wlin, and the film thickness distribution shown in FIG. 11 was obtained.

〔課題を解決するための手段〕[Means to solve the problem]

本発明に係る化学気相成長装置は、各ガス吹出し穴のう
ち半導体ウェハの中心部と対応する位置のガス吹出し穴
にガス抑制用絞りを嵌挿させてなり、この絞りは、反応
ガスの流量を成膜条件に応じて減らす寸法をもって形成
されているものである。In the chemical vapor deposition apparatus according to the present invention, a gas suppression aperture is inserted into each of the gas ejection holes at a position corresponding to the center of the semiconductor wafer, and this aperture is configured to control the flow rate of the reaction gas. The film is formed with dimensions that reduce the amount depending on the film forming conditions.

〔作　用〕[For production]

半導体ウェハの中心部へ供給される反応ガスの流量が絞
りによって抑えられ、成膜条件に応じて調整される。The flow rate of the reaction gas supplied to the center of the semiconductor wafer is suppressed by the throttle and adjusted according to the film forming conditions.

〔実施例〕〔Example〕

以下、本発明の一実施例を第１図ないし第５図（ａ）〜
（ｆ）によって詳細に説明する。Hereinafter, one embodiment of the present invention will be described in FIGS. 1 to 5 (a) to 5.
(f) will be explained in detail.

第１図は本発明の化学気相成長装置の穴開きピンを示す
斜視図、第２図は本発明に係る化学気相成長装置のガス
ヘッドの中心部を拡大して示す断面図、第３図（ａ）〜
（ｆ）は穴径の異なる穴開きビンを使用した場合のウェ
ハ上の膜厚分布を示す模式図で、同図（ａ）は穴径が３
．０鶴、同図（ｂ）は２゜０ｆｌ、同図（ｃ）は１．７
＋＋ｎ、同図（ｄ）は１．５ｆｌ、同図（ｅ）は１．３
鶴、同図（ｆ）は１．Ｏｔｍの場合を示す。FIG. 1 is a perspective view showing a perforated pin of a chemical vapor deposition apparatus according to the present invention, FIG. Figure (a) ~
(f) is a schematic diagram showing the film thickness distribution on the wafer when using perforated bottles with different hole diameters, and (a) is a schematic diagram showing the film thickness distribution on the wafer when perforated bottles with different hole diameters are used.
．． 0 crane, the same figure (b) is 2°0 fl, the same figure (c) is 1.7
++n, the same figure (d) is 1.5 fl, the same figure (e) is 1.3
Crane, figure (f) is 1. The case of Otm is shown.

第４図（ａ）〜（ｄ）は穴開きビンを変えずにステージ
とガスヘッドとの間隔を変えた場合のウェハ上の膜厚分
布を示す模式図で、同図（ａ）はギャップＢが４鶴、同
図（ｂ）は７＋＋＋＋ｓ、同図（ｃ）は１０鰭、同図（
ｄ）は１３鶴の場合を示す。第５図（ａ）〜（ｆ）はキ
ャリアガスの流量のみを変えた場合のウェハ上の膜厚分
布を示す模式図で、同図（ａ）はキャリアガスＮ！の流
量が２０１！　／ｗｉｎ、同図（ｂ）は１７．５１！／
ｍｉｎ、同図（ｃ）は１５１７ｍ１ｎ、同図（ｄ）は１
２．５１　／ｍｉｎ。Figures 4(a) to 4(d) are schematic diagrams showing the film thickness distribution on the wafer when the gap between the stage and the gas head is changed without changing the perforated bottle. The figure (b) shows 4 cranes, the figure (b) shows 7++++s, the figure (c) shows 10 fins, and the figure (
d) shows the case of 13 cranes. FIGS. 5(a) to 5(f) are schematic diagrams showing the film thickness distribution on the wafer when only the flow rate of the carrier gas is changed, and FIG. 5(a) is a diagram showing the film thickness distribution on the wafer when only the flow rate of the carrier gas is changed. The flow rate is 201! /win, figure (b) is 17.51! /
min, the same figure (c) is 1517 m1n, the same figure (d) is 1
2.51/min.

同図（ｅ）は１０１／ｌｌ１ｉｎ、同図（ｆ）は７．５
　＃／ｌ１ｌｉｎの場合を示す。これらの図において前
記第９図および第１０図で説明したものと同一もしくは
同等部材については、同一符号を付し詳細な説明は省略
する。これらの図において、１１は絞りとしての穴開き
ビンで、この穴開きビン１１は全体が略々円筒状に形成
されており、その外径はガス吹出し穴５の大口径部内に
嵌挿する寸法をもって形成されている。また、この穴開
きビン１１は、第２図に示すように、ガスヘッド４に設
けられた多数のガス吹出し穴５のうちガスへラド４の中
心部のガス吹出し穴５ａに装着されている。なお、この
穴開きビン１１の長さ寸法は本実施例では５鶴とされ、
内径は成膜条件によって変更される。長さ寸法を５鶴と
して内径を変えてウェハ１上に反応生成膜を形成した例
を第３図（ａ）〜（ｆ）に示す。The figure (e) is 101/ll1in, the figure (f) is 7.5
The case of #/l1lin is shown. In these figures, the same or equivalent members as those explained in FIGS. 9 and 10 are given the same reference numerals and detailed explanations will be omitted. In these figures, reference numeral 11 denotes a perforated bottle serving as a diaphragm, and the perforated bottle 11 is formed into a generally cylindrical shape as a whole, and its outer diameter is such that it can be fitted into the large diameter portion of the gas blowing hole 5. It is formed with. Further, as shown in FIG. 2, this perforated bottle 11 is attached to a gas blowing hole 5a in the center of the gas head 4 among the many gas blowing holes 5 provided in the gas head 4. In addition, the length dimension of this perforated bottle 11 is 5 cranes in this embodiment,
The inner diameter is changed depending on the film forming conditions. FIGS. 3(a) to 3(f) show an example in which a reaction product film is formed on the wafer 1 by changing the inner diameter with the length dimension being five cranes.

第３図（ａ）〜（ｆ）は長さ５１で内径がそれぞれ異な
る穴開きビン１１を使用し、成膜条件を従来と等しくし
てウェハｌ上に膜厚が１ｏｏｏｏ人の反応生成膜が生成
されるようにした場合の膜厚分布を示す模式図である。In Figs. 3(a) to (f), a perforated bottle 11 with a length 51 and a different inner diameter is used, and a reaction product film with a thickness of 100 mm is formed on the wafer l under the same film forming conditions as before. FIG. 3 is a schematic diagram showing a film thickness distribution when the film is generated.

第３図（ａ）〜（ｆ）によれば、内径が３．０寵の場合
にはウェハ１の中心部で１３５００人、内径が２．０鰭
の場合には１２０００人、内径が１．７Ｈの場合には１
００００人、内径が１．５ｆｌの場合には９１００人、
内径が１．３鶴の場合には８５００人、内径が１．０鰭
の場合には８０００人となり、第１１図で示される同一
成膜条件で穴開きビン１１を使用しない場合場合に較べ
て、穴開きビン１１により穴径が小さくなっていくとウ
ェハ１中心部の膜厚が次第に減少し、中心部の膜厚が周
辺部より薄い膜厚分布となっていく。この場合の成膜条
件では、同図（ｃ）に示すように、中心ガス吹出し穴５
ａに内径１．７ｇｍ、長さ５ｆｌの穴開きビン１１を用
いた時に均一な膜厚分布が得られる。According to FIGS. 3(a) to (f), when the inner diameter is 3.0 mm, there are 13,500 people at the center of the wafer 1, when the inner diameter is 2.0 mm, there are 12,000 people, and when the inner diameter is 1.0 mm, there are 12,000 people at the center of the wafer 1. 1 for 7H
0000 people, 9100 people if the inner diameter is 1.5 fl,
When the inner diameter is 1.3 fins, there are 8,500 people, and when the inner diameter is 1.0 fins, there are 8,000 people, compared to the case where the perforated bottle 11 is not used under the same film forming conditions as shown in FIG. As the diameter of the hole is reduced by the perforated bottle 11, the film thickness at the center of the wafer 1 gradually decreases, and the film thickness at the center becomes thinner than at the periphery. Under the film forming conditions in this case, as shown in FIG.
When a perforated bottle 11 with an inner diameter of 1.7 gm and a length of 5 fl is used for a, a uniform film thickness distribution can be obtained.

また、第４図（ａ）〜（ｄ）は前記の成膜条件で中心ガ
ス吹出し穴５ａに内径１．５ｆｌ、長さ５Ｈの穴開きビ
ン１１を装着させ、ステージ２とガスヘッド４との間の
ギャップＢを変化させた時の膜厚分布を示す模式図であ
る。第４図（ａ）〜（ｄ）によれば、ギャップＢが４ｎ
の場合にはウェハ１中心部の膜厚が８０００人、ギャッ
プＢが７鶴の場合には９１００人、ギヤツブＢがＩｏｎ
の場合には９５００人、ギャップＢが１３１′ｍの場合
には９８００人となる。このようにウェハ１中心部の膜
厚分布はギャップＢによっても変化するので、ギャップ
Ｂの度合に応じて内径の異なる穴開きビン１１を使用す
ることによって、均一な膜厚分布が得られる。In addition, FIGS. 4(a) to 4(d) show that a perforated bottle 11 with an inner diameter of 1.5 fl and a length of 5H is attached to the central gas blowing hole 5a under the above-mentioned film forming conditions, and the stage 2 and the gas head 4 are connected to each other. FIG. 3 is a schematic diagram showing the film thickness distribution when the gap B between the two layers is changed. According to FIGS. 4(a) to (d), the gap B is 4n
In the case of , the film thickness at the center of the wafer 1 is 8000, when the gap B is 7, it is 9100, and the gear B is Ion.
If gap B is 131'm, there will be 9,500 people, and if gap B is 131'm, there will be 9,800 people. In this way, the film thickness distribution at the center of the wafer 1 changes depending on the gap B, so by using the perforated vials 11 having different inner diameters depending on the degree of the gap B, a uniform film thickness distribution can be obtained.

さらに、第５図（ａ）〜（ｆ）は前記の成膜条件で中心
ガス吹出し穴５ａに内径１．５＋ｎ、長さ５ｎの穴開き
ビン１１を装着させ、反応ガスＡ中のキャリアＮ２ガス
の流量を変化させた場合の膜厚分布を示す模式図である
。第５図（ａ）〜（ｆ）によれば、キャリアＮ２ガスの
流量が２０１２　／＋ｉｎの場合にウェハ１中心部の膜
厚が９１００人、１７．５１　／ｍｉｎの場合に９２０
０人、１５１　／１ｌｉｎの場合に９３０ｏ人、１２．
５　ｊ！　／ｍｉｎの場合に９４００人、１０１７ｍ１
ｎＯ）場合ニ９６００人、７．５１／ｗｉｎの場合に９
８００人となる。このようにウェハ１中心部の膜厚分布
はキャリアＮ２ガスの流量によっても変化するので、こ
のキャリアＮ２ガスの流量に応じて内径の異なる穴開き
ビン１１を用いることによって、均一な膜厚分布が得ら
れる。Further, FIGS. 5(a) to 5(f) show that under the above-mentioned film forming conditions, a perforated bottle 11 with an inner diameter of 1.5+n and a length of 5n is attached to the central gas blowing hole 5a, and the carrier N2 gas in the reaction gas A is FIG. 3 is a schematic diagram showing the film thickness distribution when the flow rate of is changed. According to FIGS. 5(a) to (f), when the carrier N2 gas flow rate is 2012/+in, the film thickness at the center of the wafer 1 is 9100 mm, and when the carrier N2 gas flow rate is 17.51/min, it is 920 mm thick.
0 people, 930o people in case of 151/1lin, 12.
5 j! /min, 9400 people, 1017m1
nO) case 9,600 people, 7.51/win case 9
There will be 800 people. In this way, the film thickness distribution at the center of the wafer 1 changes depending on the flow rate of the carrier N2 gas, so by using the perforated bottle 11 with a different inner diameter depending on the flow rate of the carrier N2 gas, a uniform film thickness distribution can be achieved. can get.

したがって、上述したように成膜条件に応じて穴開きビ
ン１１の内径を変えることによって、ウェハ１の中心部
へ供給される反応ガスＡの流量がこの穴開きビン１１に
よって抑えられ、成膜条件に応じて調整されることにな
る。Therefore, as described above, by changing the inner diameter of the perforated bottle 11 according to the film-forming conditions, the flow rate of the reaction gas A supplied to the center of the wafer 1 is suppressed by the perforated bottle 11, and the film-forming conditions It will be adjusted accordingly.

なお、穴開きビン１１によって反応ガスＡの流量を抑え
るためには、上述したように内径を変える他に、第６図
および第７図で示すように長さ寸法を変えて行なうこと
もできる。In order to suppress the flow rate of the reaction gas A using the perforated bottle 11, in addition to changing the inner diameter as described above, it is also possible to change the length dimension as shown in FIGS. 6 and 7.

第６図および第７図は穴開きピンの長さを変えた場合の
他の実施例を示す図で、第６図は第１図〜第５図（ａ）
〜（ｆ）で示した実施例で使用した穴開きピンの２倍の
長さをもつ穴開きピンをガスヘッドに装着させた状態を
示す断面図、第７図は第６図で示したガスヘッドを用い
て成膜を行なった場合のウェハ上の膜厚分布を示す模式
図である。Figures 6 and 7 are diagrams showing other embodiments in which the length of the hole pin is changed, and Figure 6 is similar to Figures 1 to 5 (a).
A cross-sectional view showing a state in which a hole pin having twice the length of the hole pin used in the examples shown in (f) is attached to the gas head, and Figure 7 shows the gas head shown in Figure 6. FIG. 2 is a schematic diagram showing a film thickness distribution on a wafer when a film is formed using a head.

これらの図において前記第１図および第２図で説明した
ものと同一もしくは同等部材については、同一符号を付
し詳細な説明は省略する。この実施例で使用する穴開き
ピン１１は内径が２．０ｗｍ、長さが１０ｍとされ、第
１図ないし第５図（ａ）〜（ｆ）で示す実施例で使用し
た穴開きピン１１に較べて長さが２倍とされている。こ
の２倍の長さをもつ穴開きピン１１を使用して前記実施
例と等しい成膜条件でウェハｌに反応生成膜を形成する
と、第７図に示すように、ウェハ１の中心部での膜厚は
１０８００人となった。第７図によれば、前記第３図（
ｂ）で示したような内径２．０ｍｍ、長さ５鶴の大開き
ピン１１を使用した場合に較べて、ウェハ１の中心部で
膜厚が薄くなっていることが分かる。すなわち、ウェハ
１中心部に形成される反応生成膜の膜厚は、穴開きピン
１１の内径を変えるばかりでなく、長さを変えることに
よっても変化させることができる。In these figures, the same or equivalent members as those explained in FIGS. 1 and 2 are given the same reference numerals, and detailed explanations will be omitted. The hole pin 11 used in this example has an inner diameter of 2.0 wm and a length of 10 m, and is similar to the hole pin 11 used in the examples shown in FIGS. 1 to 5 (a) to (f). It is said to be twice the length. When a reaction product film is formed on a wafer 1 using a hole pin 11 having twice the length as described above under the same film forming conditions as in the above embodiment, as shown in FIG. The film thickness was 10,800 people. According to FIG. 7, the above-mentioned FIG. 3 (
It can be seen that the film thickness is thinner at the center of the wafer 1 compared to the case where the wide open pin 11 with an inner diameter of 2.0 mm and a length of 5 mm as shown in b) is used. That is, the thickness of the reaction product film formed at the center of the wafer 1 can be changed not only by changing the inner diameter of the hole pin 11 but also by changing its length.

また、成膜条件によって、ウェハ１中心部の膜厚の変動
する範囲が広くなる場合には、第８図に示すように長さ
、内径等の異なる複数種類の穴開きピン１１をガスヘッ
ド４の中心部に装着させることもできる。In addition, if the film thickness at the center of the wafer 1 varies over a wide range depending on the film forming conditions, multiple types of hole pins 11 with different lengths, inner diameters, etc. may be attached to the gas head 4 as shown in FIG. It can also be attached to the center of the

第８図は長さの異なる複数種類の穴開きピンをガスヘッ
ドに装着させた他の実施例を示す断面図で、同図におい
て前記第１図ないし第７図で説明したものと同一もしく
は同等部材については、同一符号を付し詳細な説明は省
略する。第８図では、ガスヘッド４の上面の中心に位置
するガス吹出し穴５ａと、それに隣接するガス吹出し穴
５ｂに、それぞれ寸法の異なる穴開きピン１１が装着さ
れている。このようにしても均一な膜厚分布を得ること
ができる。FIG. 8 is a sectional view showing another embodiment in which a plurality of hole pins of different lengths are attached to the gas head, and this figure is the same or equivalent to the one explained in FIGS. 1 to 7 above. The same reference numerals are given to the members, and detailed description thereof will be omitted. In FIG. 8, hole pins 11 having different sizes are attached to a gas blowing hole 5a located at the center of the upper surface of the gas head 4 and a gas blowing hole 5b adjacent to the gas blowing hole 5a. Even in this manner, a uniform film thickness distribution can be obtained.

なお、上記各実施例で示した成膜反応室各部の形状１寸
法および使用する反応ガスＡの種類等は、前述したもの
に限定されるものではないことは勿論である。It goes without saying that the shape and dimensions of each part of the film-forming reaction chamber and the type of reaction gas A used in each of the above embodiments are not limited to those described above.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明に係る化学気相成長装置は、
各ガス吹出し穴のうち半導体ウェハの中心部と対応する
位置のガス吹出し穴にガス抑制用絞りを嵌挿させてなり
、この絞りは、反応ガスの流量を成膜条件に応じて減ら
す寸法をもって形成されているため、半導体ウェハの中
心部へ供給される反応ガスの流量が絞りによって抑えら
れ、成膜条件に応じて調整される。したがって、半導体
ウェハ上に膜厚の均一な反応生成膜を形成することがで
きる。As explained above, the chemical vapor deposition apparatus according to the present invention,
A gas suppression restrictor is inserted into each gas blowout hole at a position corresponding to the center of the semiconductor wafer, and this restrictor is formed with dimensions to reduce the flow rate of the reaction gas depending on the film forming conditions. Therefore, the flow rate of the reaction gas supplied to the center of the semiconductor wafer is suppressed by the throttle and adjusted according to the film forming conditions. Therefore, a reaction product film having a uniform thickness can be formed on the semiconductor wafer.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の化学気相成長装置の穴開きピンを示す
斜視図、第２図は本発明に係る化学気相成長装置のガス
ヘッドの中心部を拡大して示す断面図、第３図（ａ）〜
（ｆ）は穴径の異なる穴開きピンを使用した場合のウェ
ハ上の膜厚分布を示す模式図で、同図（ａ）は穴径が３
．０ｆｉ、同図（ｂ）は２゜０鶴、同図（ｃ）は１．７
ｍ、同図（ｄ）は１．５龍、同図（ｅ）は１．３鶴、同
図（ｆ）は１．０鶴の場合を示す。 第４図（ａ）〜（ｄ）は穴開きピンを変えずにステージ
とガスヘッドとの間隔を変えた場合のウェハ上の膜厚分
布を示す模式図で、同図（ａ）はギャップＢが４ｆｉ、
同図（ｂ）は７鶴、同図（ｃ）は１０ｍｍ、同図（ｄ）
は１３ｍの場合を示す。第５図（ａ）〜（ｆ）はキャリ
アガスの流量のみを変えた場合のウェハ上の膜厚分布を
示す模式図で、同図（ａ）はキャリアガスＮ２の流量が
２０１　／＋ｓｉｎ、同図（ｂ）は１７．５１　／ｖａ
ｔｎ−ｂ同図（Ｃ）は１５１　／１ａｉｎ、同図（ｄ）
は１２．５　Ａ’　／ａｋｉｎ、同図（ｅ）は１０　Ｉ
ｔ　／＋ｉｎ、同図（ｆ）は７．５１７＋ｎｉｎの場合
を示す、第６図および第７図は穴開きピンの長さを変え
た場合の他の実施例を示す図で、第６図は第１図〜第５
図（ａ）〜Ｃｆ”）で示した実施例で使用した穴開きピ
ンの２倍の長さをもつ穴開きピンをガスヘッドに装着さ
せた状態を示す断面図、第７図は第６図で示したガスヘ
ッドを用いて成膜を行なった場合のウェハ上の膜厚分布
を示す模式図である。第８図は長さの異なる複数種類の
穴開きピンをガスヘッドに装着させた他の実施例を示す
断面図である。第９図は従来の化学気相成長装置の概略
構成を示す断面図、第１０図は従来の化学気相成長装置
のガスヘッドを示す平面図、第１１図は従来の化学気相
成長装置を使用した場合の反応生成膜の膜厚分布を示す
模式図である。 ４・・・・ガスヘッド、５．５ａ、５ｂ・・・・ガス吹
出し穴、工１・・・・穴開きピン。FIG. 1 is a perspective view showing a perforated pin of a chemical vapor deposition apparatus according to the present invention, FIG. Figure (a) ~
(f) is a schematic diagram showing the film thickness distribution on the wafer when hole pins with different hole diameters are used, and (a) is a schematic diagram showing the film thickness distribution on the wafer when hole pins with different hole diameters are used.
．． 0fi, the same figure (b) is 2°0 crane, the same figure (c) is 1.7
m, Figure (d) shows the case of 1.5 dragon, Figure (e) shows the case of 1.3 crane, Figure (f) shows the case of 1.0 crane. Figures 4(a) to 4(d) are schematic diagrams showing the film thickness distribution on the wafer when the distance between the stage and the gas head is changed without changing the hole pin, and Figure 4(a) is a diagram showing the film thickness distribution on the wafer when the gap between the stage and the gas head is changed without changing the hole pin. is 4fi,
The same figure (b) is 7 cranes, the same figure (c) is 10mm, the same figure (d)
shows the case of 13m. Figures 5(a) to 5(f) are schematic diagrams showing the film thickness distribution on the wafer when only the flow rate of the carrier gas is changed. Figure (b) is 17.51/va
tn-b (C) is 151/1ain, (d)
is 12.5 A'/akin, and (e) is 10 I
t/+in, Fig. 6(f) shows the case of 7.517+nin, Figs. 6 and 7 show other embodiments in which the length of the hole pin is changed, and Fig. 6 shows the case of 7.517+nin. Figures 1 to 5
Figure 7 is a cross-sectional view showing the state in which a hole pin with twice the length of the hole pin used in the embodiment shown in Figures (a) to Cf'' is attached to the gas head. Fig. 8 is a schematic diagram showing the film thickness distribution on a wafer when film formation is performed using the gas head shown in Figure 8. FIG. 9 is a sectional view showing a schematic configuration of a conventional chemical vapor deposition apparatus, FIG. 10 is a plan view showing a gas head of a conventional chemical vapor deposition apparatus, and FIG. The figure is a schematic diagram showing the film thickness distribution of a reaction product film when a conventional chemical vapor deposition apparatus is used. 4... Gas head, 5.5a, 5b... Gas blowing hole, 1... Hole pin.

Claims (1)

【特許請求の範囲】[Claims] 　半導体ウェハに反応ガスを吹付けるガス吹出し穴が半
導体ウェハの主面と対向する部位に多数設けられたガス
ヘッドを有し、半導体ウェハに吹付けられた反応ガスが
半導体ウェハの側方へ排気される化学気相成長装置にお
いて、前記各ガス吹出し穴のうち半導体ウェハの中心部
と対応する位置のガス吹出し穴にガス抑制用絞りを嵌挿
させてなり、この絞りは、反応ガスの流量を成膜条件に
応じて減らす寸法をもって形成されていることを特徴と
する化学気相成長装置。A gas blowing hole for blowing reactive gas onto the semiconductor wafer has a large number of gas heads provided at a portion facing the main surface of the semiconductor wafer, and the reactive gas sprayed onto the semiconductor wafer is exhausted to the side of the semiconductor wafer. In the chemical vapor deposition apparatus, a gas suppression throttle is inserted into the gas outlet hole at a position corresponding to the center of the semiconductor wafer among the gas outlet holes, and this throttle controls the flow rate of the reaction gas. A chemical vapor deposition apparatus characterized in that it is formed with dimensions that are reduced depending on film conditions.
JP23871190A 1990-09-05 1990-09-05 Chemical vapor growth device Pending JPH04115531A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23871190A JPH04115531A (en) 1990-09-05 1990-09-05 Chemical vapor growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23871190A JPH04115531A (en) 1990-09-05 1990-09-05 Chemical vapor growth device

Publications (1)

Publication Number Publication Date
JPH04115531A true JPH04115531A (en) 1992-04-16

Family

ID=17034139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23871190A Pending JPH04115531A (en) 1990-09-05 1990-09-05 Chemical vapor growth device

Country Status (1)

Country Link
JP (1) JPH04115531A (en)

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