JPH04111375A - Semiconductor laser element - Google Patents
Semiconductor laser elementInfo
- Publication number
- JPH04111375A JPH04111375A JP22910690A JP22910690A JPH04111375A JP H04111375 A JPH04111375 A JP H04111375A JP 22910690 A JP22910690 A JP 22910690A JP 22910690 A JP22910690 A JP 22910690A JP H04111375 A JPH04111375 A JP H04111375A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- layer
- semiconductor laser
- clad layer
- contact layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 9
- 238000005253 cladding Methods 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 240000002329 Inga feuillei Species 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、リッジ導波路型半導体レーザ素子の構造に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of a ridge waveguide type semiconductor laser device.
ＩｎＧａＡｓ／ＧａＡｓ歪量子井戸レーザ素子は、例え
ば第３図に示すような構造をしている。即ち、ｎ−Ｇａ
Ａｓ基板１上にｎ−１ｎＧａＰクラッド層２、ＩｎＧａ
Ａｓ／ＧａＡｓ歪量子井戸活性層３、ｐ−１ｎＧａＰク
ラッド層４、ｐＩｎＧａＡｓコンタクト層５を順次積層
し、次にフォトリソグラフィ等の手法によりｐ−１ｎＧ
ａＰクラッド層４の途中までエツチングしてメサを形成
する。次に、スバンタにより、電流狭窄用の絶縁膜とし
て５ｉＯＷ！６を形成した後、再びフォトリングラフィ
などの手法により、メサ上部の５ｉＯｉｉ６をエツチン
グし、電流通路を形成した後、Ｔｉ／ＰＬ／Ａｕ１ｉ極
７およびＡｕ−Ｇｅ−Ｎｉ／＾Ｕ電極８を蒸着したもの
である。An InGaAs/GaAs strained quantum well laser device has a structure as shown in FIG. 3, for example. That is, n-Ga
n-1nGaP cladding layer 2, InGa on As substrate 1
An As/GaAs strained quantum well active layer 3, a p-1nGaP cladding layer 4, and a pInGaAs contact layer 5 are sequentially laminated, and then p-1nG is formed by a method such as photolithography.
The aP cladding layer 4 is etched halfway to form a mesa. Next, Svanta developed 5iOW! as an insulating film for current confinement. After forming 6, 5iOii6 on the upper part of the mesa is etched again by a method such as photolithography to form a current path, and then Ti/PL/Au1i electrode 7 and Au-Ge-Ni/^U electrode 8 are deposited. This is what I did.
このタイプの半導体レーザ素子は、−回の気相成長で製
作でき、しかも活性層を平坦なまま残しているので、信
転性の高い半導体レーザ素子となる。This type of semiconductor laser device can be manufactured by -times of vapor phase growth, and since the active layer remains flat, the semiconductor laser device has high reliability.
しかしながら、上述の半導体レーザ素子の製作工程では
、電流狭窄用のＳｉＯ膜６の成膜工程と、電流注入用の
窓開けのためのフォトリソグラフィを含む工程が必要に
なり、製作工程が複雑になるという問題があった。However, the manufacturing process of the semiconductor laser device described above requires a process including a process of forming the SiO film 6 for current confinement and a process including photolithography for opening a window for current injection, making the manufacturing process complicated. There was a problem.
本発明は上記問題点を解決した半導体レーザ素子を提供
するもので、活性層上にリッジ部を有するＩｎＧａＰク
ラッド層、リッジ部側面にＩｎＧａＡｓコンタクト層、
コンタクト層上部に電極が順次形成されたリッジ導波路
型半導体レーザ素子において、電極はコンタクト層とオ
ーミック接合し、クランド層とショットキー接合する金
属からなり、ｔＪＮ極はリッジ部側面において直接にク
ラッド層と接するように形成されたことを特徴とするも
のである。The present invention provides a semiconductor laser device that solves the above problems, and includes an InGaP cladding layer having a ridge portion on the active layer, an InGaAs contact layer on the side surface of the ridge portion, and an InGaP cladding layer having a ridge portion on the active layer.
In a ridge waveguide semiconductor laser device in which electrodes are sequentially formed on the top of a contact layer, the electrodes are made of a metal that forms an ohmic contact with the contact layer and a Schottky contact with the cladding layer, and the tJN pole is directly connected to the cladding layer on the side surface of the ridge. It is characterized by being formed so as to be in contact with the
上記の構造を有する半導体レーザ素子において、電極と
ＩｎＧａＡｓコンタクト層との接合はオーミック接合を
なし、電極とＩｎＧａＰクラッド層との接合はショトキ
ー接合をなしている。このような性質を有する電極材と
してはＴｉがある。第４図に、ＴｉＩｎＧａＡｓオーミ
ック接合およびＴｉ−ＩｎＧａＰショットキー接合の電
流・電圧特性例を示した。In the semiconductor laser device having the above structure, the junction between the electrode and the InGaAs contact layer is an ohmic junction, and the junction between the electrode and the InGaP cladding layer is a Schottky junction. Ti is an electrode material having such properties. FIG. 4 shows examples of current/voltage characteristics of a TiInGaAs ohmic junction and a Ti-InGaP Schottky junction.
従って、前記電極から電流を注入しようとすると、電流
はコンタクト層からは注入されるが、クラッド層からは
ショットキーバリアーに妨げられて注入されない。この
ようにして、本発明によれば、絶縁膜を設けることなく
電流狭窄を行うことができる。Therefore, when trying to inject a current from the electrode, the current is injected from the contact layer, but not from the cladding layer because it is blocked by the Schottky barrier. In this way, according to the present invention, current confinement can be performed without providing an insulating film.
〔実施例］
以下１図面に示した実施例に基づいて本発明の詳細な説
明する。[Example] The present invention will be described in detail below based on an example shown in one drawing.
第１図は本発明に係る半導体レーザ素子の一実施例の断
面図である。本実施例の製作工程は、ＭＯＣＶＤ法によ
り、ｎ−ＧａＡｓ基板１上にｎ−１ｎＧａＰクランド層
２、ＩｎＧａＡｓ／ＧａＡｓ歪量子井戸活性層３、ｐ−
１ｎＧａＰクラッド層４、ｐ−１ｎＧａＡｓコンタクト
層５を順次積層し、フォトリソグラフィなどの手法によ
り、ｐ−１ｎＧａＰクラッド層４の途中までエツチング
を行い、メサを形成した後、Ｐ電極７としてＴ１／Ｐｔ
／Ａｕを、ｎｉｉ極８としてＡｕ−Ｇｅ−Ｎｉ／Ａｕを
順次蒸着した。このようにして製作された素子にｔｆｆ
ｌを流すと、ｐ−１ｎＧａＰクラッド層４とＰ電極７の
間にはショットキー接合部９が形成され、Ｐ電極とｐＩ
ｎＧａＡｓコンタクト層５の間にのみ電流が流れ、電流
狭窄が行われた。本実施例と、比較例として第３図に示
した従来例の発光特性を第２図に示す。FIG. 1 is a sectional view of one embodiment of a semiconductor laser device according to the present invention. In the manufacturing process of this example, an n-1nGaP ground layer 2, an InGaAs/GaAs strained quantum well active layer 3, a p-
A 1nGaP cladding layer 4 and a p-1nGaAs contact layer 5 are sequentially laminated, and the p-1nGaP cladding layer 4 is etched halfway through using a method such as photolithography to form a mesa, and then a T1/Pt layer is formed as a P electrode 7.
/Au as the nii electrode 8, and Au-Ge-Ni/Au were sequentially deposited. Tff is applied to the device manufactured in this way.
When l flows, a Schottky junction 9 is formed between the p-1nGaP cladding layer 4 and the P electrode 7, and the P electrode and the pI
Current flowed only between the nGaAs contact layers 5, resulting in current confinement. FIG. 2 shows the light emission characteristics of this example and the conventional example shown in FIG. 3 as a comparative example.
第２図より、本実施例は従来例に劣らない発光特性を有
することがわかる。なお、Ｐ電極材としては、Ｔｉに限
定されず、Ｃｒを用いてもよい。From FIG. 2, it can be seen that this example has light emission characteristics comparable to those of the conventional example. Note that the P electrode material is not limited to Ti, and Cr may also be used.
さらに、本発明は上記実施例に限定されることはなく、
上記実施例においてｎ型とｐ型を逆にしてもよい。Furthermore, the present invention is not limited to the above embodiments,
In the above embodiments, the n-type and p-type may be reversed.
〔発明の効果］
以上説明したように本発明によれば、活性層上にＩｎＧ
ａＰクラッド層、ＩｎＧａＡｓコンタクト層を積層し、
メサを形成した後、前記クラッド層およびコンタクト層
上に、コンタクト層とオーミンク接合し、クランド層と
ショットキー接合する電極を積層するため、リッジ導波
路型半導体レーザ素子の製作工程が簡略化され、信顧性
のある低コストの半導体レーザ素子が得られるという優
れた効果がある。[Effects of the Invention] As explained above, according to the present invention, InG is formed on the active layer.
Stacking an aP cladding layer and an InGaAs contact layer,
After forming the mesa, an electrode is laminated on the cladding layer and the contact layer to form an ohmink contact with the contact layer and a Schottky contact with the cladding layer, thereby simplifying the manufacturing process of the ridge waveguide semiconductor laser device. An excellent effect is that a reliable and low-cost semiconductor laser device can be obtained.
第１図は本発明に係る半導体レーザ素子の一実施例の断
面図、第２図は前記実施例の発光出力特性図、第３図は
半導体レーザ素子の従来例の断面図、第４図は、Ｔｉ−
１ｎＧａＡｓオ一ミツク接合およびＴｉ−１ｎＧａＰシ
ヨツトキ一接合の電流・電圧特性例を示す図である。
■・・・基板、 ２，４・・・クラ・ノド層、 ３
・・・活性層、 ５・・・コンタクト層、 ６・・
・ＳｉＯ膜、７、 ８・・・電極、 ９・・・ショット
キー接合部。FIG. 1 is a sectional view of an embodiment of a semiconductor laser device according to the present invention, FIG. 2 is a light emission output characteristic diagram of the embodiment, FIG. 3 is a sectional view of a conventional example of a semiconductor laser device, and FIG. 4 is a sectional view of a conventional example of a semiconductor laser device. , Ti-
FIG. 3 is a diagram showing an example of current/voltage characteristics of a 1nGaAs ohmic junction and a Ti-1nGaP shortcut junction. ■...Substrate, 2,4...Kura Nodo layer, 3
...Active layer, 5...Contact layer, 6...
-SiO film, 7, 8...electrode, 9...Schottky junction.
Claims (1)
ッジ部上部にＩｎＧａＡｓコンタクト層、コンタクト層
上部に電極が順次形成されたリッジ導波路型半導体レー
ザ素子において、電極はコンタクト層とオーミック接合
し、クラッド層とショットキー接合する金属からなり、
該電極はリッジ部側面において直接にクラッド層と接す
るように形成されたことを特徴とするリッジ導波路型半
導体レーザ素子。In a ridge waveguide semiconductor laser device in which an InGaP cladding layer having a ridge portion is formed on the active layer, an InGaAs contact layer is formed above the ridge portion, and an electrode is formed on the contact layer in this order, the electrode is in ohmic contact with the contact layer, and the cladding layer Consists of metal that is Schottky bonded to
A ridge waveguide type semiconductor laser device, characterized in that the electrode is formed on a side surface of a ridge portion so as to be in direct contact with a cladding layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22910690A JPH04111375A (en) | 1990-08-30 | 1990-08-30 | Semiconductor laser element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22910690A JPH04111375A (en) | 1990-08-30 | 1990-08-30 | Semiconductor laser element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04111375A true JPH04111375A (en) | 1992-04-13 |
Family
ID=16886837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22910690A Pending JPH04111375A (en) | 1990-08-30 | 1990-08-30 | Semiconductor laser element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04111375A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5301202A (en) * | 1993-02-25 | 1994-04-05 | International Business Machines, Corporation | Semiconductor ridge waveguide laser with asymmetrical cladding |
| WO2004032296A1 (en) * | 2002-09-20 | 2004-04-15 | Sony Corporation | Semiconductor laser device and production method therefor |
| JP2005183927A (en) * | 2003-11-27 | 2005-07-07 | Sharp Corp | Semiconductor laser element, optical disc apparatus, and light transmission system |
| JP2006156639A (en) * | 2004-11-29 | 2006-06-15 | Sharp Corp | Semiconductor laser element, optical disc apparatus, and light transmission system |
| US7492801B2 (en) | 2003-11-11 | 2009-02-17 | Sharp Kabushiki Kaisha | Semiconductor laser element, manufacturing method thereof, optical disk apparatus and optical transmission system |
| US7558307B2 (en) | 2004-02-16 | 2009-07-07 | Sharp Kabushiki Kaisha | Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system |
| JP2009158550A (en) * | 2007-12-25 | 2009-07-16 | Sony Corp | Semiconductor light emitting element and display using the same |
| JP2009188435A (en) * | 2003-11-11 | 2009-08-20 | Sharp Corp | Semiconductor laser element, manufacturing method thereof, optical disk apparatus, and optical transmission system |
| US7593442B2 (en) | 2004-08-26 | 2009-09-22 | Sharp Kabushiki Kaisha | Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system |
| US7760783B2 (en) * | 2005-02-23 | 2010-07-20 | Sharp Kabushiki Kaisha | Semiconductor device such as semiconductor laser device and manufacturing method therefor, and optical transmission module and optical disk unit employing the semiconductor laser device |
| US8934513B2 (en) | 1994-09-14 | 2015-01-13 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
-
1990
- 1990-08-30 JP JP22910690A patent/JPH04111375A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5301202A (en) * | 1993-02-25 | 1994-04-05 | International Business Machines, Corporation | Semiconductor ridge waveguide laser with asymmetrical cladding |
| US8934513B2 (en) | 1994-09-14 | 2015-01-13 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
| WO2004032296A1 (en) * | 2002-09-20 | 2004-04-15 | Sony Corporation | Semiconductor laser device and production method therefor |
| US7492801B2 (en) | 2003-11-11 | 2009-02-17 | Sharp Kabushiki Kaisha | Semiconductor laser element, manufacturing method thereof, optical disk apparatus and optical transmission system |
| JP2009188435A (en) * | 2003-11-11 | 2009-08-20 | Sharp Corp | Semiconductor laser element, manufacturing method thereof, optical disk apparatus, and optical transmission system |
| JP2005183927A (en) * | 2003-11-27 | 2005-07-07 | Sharp Corp | Semiconductor laser element, optical disc apparatus, and light transmission system |
| US7558307B2 (en) | 2004-02-16 | 2009-07-07 | Sharp Kabushiki Kaisha | Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system |
| US7593442B2 (en) | 2004-08-26 | 2009-09-22 | Sharp Kabushiki Kaisha | Semiconductor laser device, semiconductor laser device manufacturing method, optical disk apparatus and optical transmission system |
| JP2006156639A (en) * | 2004-11-29 | 2006-06-15 | Sharp Corp | Semiconductor laser element, optical disc apparatus, and light transmission system |
| US7760783B2 (en) * | 2005-02-23 | 2010-07-20 | Sharp Kabushiki Kaisha | Semiconductor device such as semiconductor laser device and manufacturing method therefor, and optical transmission module and optical disk unit employing the semiconductor laser device |
| US7816162B2 (en) | 2005-02-23 | 2010-10-19 | Sharp Kabushiki Kaisha | Semiconductor device manufacturing method |
| JP2009158550A (en) * | 2007-12-25 | 2009-07-16 | Sony Corp | Semiconductor light emitting element and display using the same |
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