JPH0389440A - Electron beam device having linear source - Google Patents
Electron beam device having linear sourceInfo
- Publication number
- JPH0389440A JPH0389440A JP22686289A JP22686289A JPH0389440A JP H0389440 A JPH0389440 A JP H0389440A JP 22686289 A JP22686289 A JP 22686289A JP 22686289 A JP22686289 A JP 22686289A JP H0389440 A JPH0389440 A JP H0389440A
- Authority
- JP
- Japan
- Prior art keywords
- deflector
- electron beam
- linear
- deflectors
- optical axis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010894 electron beam technology Methods 0.000 title claims description 35
- 230000003287 optical effect Effects 0.000 claims abstract description 17
- 230000005855 radiation Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 3
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は線源線状電子ビーム装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a source linear electron beam device.
従来、半導体基板等の試料をアニールする際使用される
線源線状電子ビーム装置の概略構璋は、例えば、電子源
の線状カソード、カソードとの電位差によって電子を加
速させるアノード電極、バイアス電圧でビームを調節す
るウェネルト電極、均一なビーム電流密度の線状電子ビ
ームを試料上に集束するレンズ、線状電子ビームを試料
上で走査させる偏向器、そして、試料を移動させるＸＹ
テーブルからなっていた（精機学会エネルギビーム分科
会編：エネルギビーム加工、（リアライズ社、１９８５
）Ｐ、２６８゜斎藤修−：第５回新機能素子技術シンポ
ジウム予稿集（１９８６）Ｐ。Conventionally, the general structure of a source linear electron beam device used when annealing samples such as semiconductor substrates is, for example, a linear cathode of the electron source, an anode electrode that accelerates electrons by a potential difference with the cathode, and a bias voltage. a Wehnelt electrode that adjusts the beam, a lens that focuses a linear electron beam with uniform beam current density onto the sample, a deflector that scans the linear electron beam over the sample, and an XY that moves the sample.
It consisted of a table (edited by the Energy Beam Subcommittee of the Japan Society of Precision Machinery Engineers: Energy Beam Processing, (Realize Inc., 1985).
) P, 268° Osamu Saito: Proceedings of the 5th New Functional Device Technology Symposium (1986) P.
１４３）。143).
しかしながら、線状電子ビームの形成は微妙な調整が必
要で、とくに線状ビームの長手方向の偏向には敏感で、
実験結果ではビームプロファイルがビーム長手方向の偏
向により第６図に示すように変化した。However, forming a linear electron beam requires delicate adjustment, and is particularly sensitive to longitudinal deflection of the linear beam.
In the experimental results, the beam profile changed as shown in FIG. 6 due to deflection in the longitudinal direction of the beam.
図に示したように、一般に、右に偏向した場合は右が高
くなり、左に偏向した場合は左が高くなる。電子ビーム
は外部からの電磁界の影響や、カソードあるいは電子銃
の取り付は精度などの問題により線状ビームプロファイ
ルが変化することが多く、その都度カソード取り付けを
やり直したり、フラットなプロファイルのビーム照射位
置に調整したりして、線状ビーム形成に多大の時間を費
やしていた。As shown in the figure, in general, when deflected to the right, the right side becomes higher, and when deflected to the left, the left side becomes higher. The linear beam profile of an electron beam often changes due to the influence of external electromagnetic fields and problems with the accuracy of the cathode or electron gun installation, so it is necessary to reinstall the cathode each time or to irradiate a beam with a flat profile. A lot of time was spent adjusting the position and forming a linear beam.
本発明の目的は、この様な問題を解決し、線状ビームプ
ロファイル調整が短時間でおこなえ、安定した線状電子
ビームを照射できる線源線状電子ビーム装置を提供する
ことにある。SUMMARY OF THE INVENTION An object of the present invention is to solve such problems and provide a linear electron beam source that can perform linear beam profile adjustment in a short time and irradiate a stable linear electron beam.
本発明は、
１、レンズ後段に２つの偏向器を設け、該偏向器のうち
の１つは、電子ビームの電子光学系の光軸に垂直なＸＹ
平面のＸ軸Ｙ軸用の２組の電磁偏向コイルあるいは２組
の静電偏向板を持ち、残りの１つはＸ軸用の１組の電磁
偏向コイルあるいは１組の静電偏向板を持ち、前記２つ
の偏向器間距離と、最後段の偏向器と電子ビームの被照
射体である試料間の距離とに差を持たせたことを特徴と
する線源線状電子ビーム装置。The present invention has the following features: 1. Two deflectors are provided at the rear stage of the lens, and one of the deflectors is arranged in the XY direction perpendicular to the optical axis of the electron optical system of the electron beam.
It has two sets of electromagnetic deflection coils or two sets of electrostatic deflection plates for the X and Y axes of the plane, and the remaining one has one set of electromagnetic deflection coils or one set of electrostatic deflection plates for the X axis. . A linear electron beam source characterized in that a distance between the two deflectors and a distance between the last stage deflector and a sample which is an object to be irradiated with the electron beam are made different.
２．２つの偏向器に電子光学系の光軸を中心に回転する
機構を設けた第１項記載の線源線状電子ビーム装置。2. The source linear electron beam device according to item 1, wherein the two deflectors are provided with a mechanism for rotating around the optical axis of the electron optical system.
３．２つの偏向器のうち、２組の電磁偏向コイルあるい
は２組の静電偏向板を持つ偏向器のうちの１組の電磁偏
向コイルあるいは１組の静電偏向板が独立に電子光学系
の光軸を中心に回転する機構を設けた第２項記載の線源
線状電子ビーム装置。3. Of the two deflectors, one set of electromagnetic deflection coils or one set of electrostatic deflection plates of a deflector having two sets of electromagnetic deflection coils or two sets of electrostatic deflection plates can be used independently as an electron optical system. 3. The linear electron beam device according to claim 2, further comprising a mechanism for rotating around an optical axis.
線状電子ビームプロファイルの測定結果から、ビーム長
辺方向への偏向により、ビームプロファイルは第６図に
示すように、左に偏向した場合（ａ）のように左上りの
プロファイル、中央では（ｂ）のようにフラット、右に
偏向した場合（Ｃ）のように右上りのプロファイルとな
り、その変化はビームの偏向量、すなわち、ビーム偏向
角に依存していることがわかった。フィラメントの取り
付は精度や、外部からの電磁界の影響でビームプロファ
イルが崩れることがあるが、多くの場合、前記ビームの
偏向によるプロファイルの変化を利用することで、すな
わち、ビーム照射位置を調節することでフラットなプロ
ファイルになるようにビーム形状を修正することができ
る。From the measurement results of the linear electron beam profile, as shown in Figure 6, due to deflection in the direction of the long side of the beam, the beam profile is upward-left profile in the case of deflection to the left (a), and in the center (b). ), and when the beam is deflected to the right, the profile is upward to the right as shown in (C), and it was found that the change depends on the amount of beam deflection, that is, the beam deflection angle. The beam profile may be distorted due to the accuracy of filament installation or the influence of external electromagnetic fields, but in many cases, the beam irradiation position can be adjusted by utilizing the change in profile due to the beam deflection. By doing this, the beam shape can be modified so that it has a flat profile.
本発明による線状電子ビーム装置では偏向器を２段設け
ているため、例えば、第４図に示すように、線状ビーム
を長辺方向に偏向できるように２段の偏向器の向きを合
わせると（図中ではｙ方向）、線状ビームの長辺方向に
２回偏向できる。Since the linear electron beam device according to the present invention has two stages of deflectors, for example, as shown in FIG. 4, the directions of the two stages of deflectors are adjusted so that the linear beam can be deflected in the long side direction. (the y direction in the figure), the linear beam can be deflected twice in the long side direction.
図中のコイル上の矢印はコイル電流の方向を表している
が、これは逆方向でもよい。Although the arrow on the coil in the figure represents the direction of the coil current, it may be in the opposite direction.
第５図に示すように、２回目の偏向方向を１回目と逆方
向にするとビーム照射位置を常に中心に合わせることが
可能になる。また、本発明では２つの偏向器Ｉ、■の間
の距離１１と、２段目の偏向器■から試料面までの距離
（２とに差を持たせているため、ビームを中心に照射す
る場合、１回目の偏向角と２回目の偏向角に差ができ、
この差分がビームプロファイルの変化に寄与することに
なり、ビーム照射位置を一定に保ったまま線状ビームの
プロファイルの修正を行なうことができることになる。As shown in FIG. 5, if the second deflection direction is opposite to the first deflection direction, the beam irradiation position can always be centered. In addition, in the present invention, there is a difference between the distance 11 between the two deflectors I and ■ and the distance (2) from the second-stage deflector ■ to the sample surface. In this case, there is a difference between the first deflection angle and the second deflection angle,
This difference contributes to a change in the beam profile, and the profile of the linear beam can be corrected while keeping the beam irradiation position constant.
すなわち、第５図にみるように、距離１１く距離１２の
場合、偏向距離を等しくすると偏向罷工の偏向角の方が
偏向器■の偏向角より大きくなるため、偏向罷工でのプ
ロファイルの変形量の方が大きい。したがって、初期の
ビームプロファイルが（ア〉のように左上がりであれば
、偏向器Ｉで右に偏向しくイ）のように右上がりのプロ
ファイルにし、その後偏向器Ｈにより再度左に偏向すれ
ばプロファイルをフラットにすることが可能となる。ま
た、線状ビームの短辺方向の偏向に関しては、プロファ
イルの変形が少なく実用上問題とはならない。In other words, as shown in Fig. 5, when the distance is 11 and the distance is 12, if the deflection distances are equal, the deflection angle of the deflection strike will be larger than the deflection angle of the deflector ■, so the amount of profile deformation during the deflection strike will be is larger. Therefore, if the initial beam profile is sloping to the left as shown in (a), it is deflected to the right by deflector I, and then the profile is made to be sloping to the right as shown in b). If the beam profile is then deflected to the left again by deflector H, the profile It is possible to make it flat. Further, regarding the deflection of the linear beam in the short side direction, the profile is not deformed so much that it does not pose a practical problem.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の請求項１の一実施例の線源線状電子ビ
ーム装置の概略構成図である。FIG. 1 is a schematic diagram of a linear electron beam device according to an embodiment of the present invention.
第１図に示すように、線状カソード１から出射された線
状電子ビーム８は線状カソード１とアノード３との電位
差によって加速される。ビーム電流はウェネルト電極２
にかかるバイアス電圧によって調節される。レンズ４に
入射したビームはレンズの磁界あるいは電界によって試
料７上に長手方向のビーム電流密度の最大が均一な線状
ビームとして集束する。試料７上のビームは偏向器によ
って走査され試料７上の必要範囲をアニールする。また
試料７はＸＹテーブル９によって任意の位置に移動でき
る。偏向器は偏向器Ｉ、偏向器■の２段で構成されてお
り、その概念は、第４図に示すようになる。すなわち、
２組の偏向コイル（静電偏向板でも同様の効果があるが
、図示せず）を持つ偏向器Ｉ５と１組の偏向コイルを持
つ偏向器■６を同軸上に配置し、偏向器Ｉ５．［６の向
きを線状電子ビームの長辺方向く図中ではＸ方向〉に偏
向できるように合わせる（図では磁界で偏向するためｙ
方向に偏向コイルを合わせている〉、偏向器Ｉ５と偏向
器■６の位置は入れ換えても同様に線状ビーム長辺方向
のプロファイルの修正が可能である。線状電子ビーム８
は短辺方向（図中ｙ方向）に走査することによって試料
７をアニールできる。短辺方向の走査は偏向器■５の偏
向コイル２，１３で行なう。As shown in FIG. 1, the linear electron beam 8 emitted from the linear cathode 1 is accelerated by the potential difference between the linear cathode 1 and the anode 3. Beam current is Wehnelt electrode 2
is adjusted by the bias voltage applied to it. The beam incident on the lens 4 is focused on the sample 7 by the magnetic field or electric field of the lens as a linear beam with a uniform maximum beam current density in the longitudinal direction. The beam on the sample 7 is scanned by a deflector to anneal a required area on the sample 7. Further, the sample 7 can be moved to any position by the XY table 9. The deflector is composed of two stages, a deflector I and a deflector II, and its concept is shown in FIG. That is,
A deflector I5 having two sets of deflection coils (an electrostatic deflection plate has the same effect, but not shown) and a deflector II6 having one set of deflection coils are arranged coaxially, and the deflector I5. [6] Adjust the direction of the linear electron beam so that it can be deflected in the long side direction (the X direction in the figure).
The profile in the long side direction of the linear beam can be similarly corrected even if the positions of the deflector I5 and the deflector 6 are interchanged. linear electron beam 8
The sample 7 can be annealed by scanning in the short side direction (y direction in the figure). Scanning in the short side direction is performed by the deflection coils 2 and 13 of the deflector 5.
第２図は本発明の請求項２の一実施例の線源線状電子ビ
ーム装置の概略構成図である。FIG. 2 is a schematic diagram of a linear electron beam device according to an embodiment of the second aspect of the present invention.
第２図で示した装置は第１図で示した装置に偏向罷工５
と偏向器■６の回転機構をつけたものである。偏向罷工
５と偏向器■６は独立に回転するようにしてもよい。こ
の機構の追加により、偏向器の向きを線状ビームに対し
て微少に調整できる。The equipment shown in Figure 2 is the same as the equipment shown in Figure 1.
It is equipped with a rotation mechanism for the deflector ■6. The deflector 5 and the deflector 6 may be rotated independently. By adding this mechanism, the direction of the deflector can be finely adjusted with respect to the linear beam.
第３図は本発明の請求項３の一実施例の線源線状電子ビ
ーム装置の概略構成図である。FIG. 3 is a schematic diagram of a linear electron beam device according to an embodiment of the third aspect of the present invention.
第３図で示した装置は第２図で示した装置に線状ビーム
の短辺方向に走査する偏向コイル２゜１３の回転機構を
つけたものである。短辺方向の走査方向を回転すること
により、線状ビームの走査方向をビーム長辺に対して任
意の角度で行なうことができる。The device shown in FIG. 3 is the same as the device shown in FIG. 2, with a rotating mechanism for a deflection coil 2.degree. 13 that scans the linear beam in the short side direction. By rotating the scanning direction in the short side direction, the scanning direction of the linear beam can be set at an arbitrary angle with respect to the long side of the beam.
〔発明の効果〕
以上述べたとおり、本発明の実施例の装置によれば、線
状ビームのプロファイルの突出した部分を、照射位置の
変更や、カソード取り付は位置の修正無しで、短時間で
、均一な電流密度に修正することができる。[Effects of the Invention] As described above, according to the apparatus of the embodiment of the present invention, the protruding portion of the profile of the linear beam can be irradiated in a short time without changing the irradiation position or installing the cathode. The current density can be adjusted to be uniform.
第１図は本発明の請求項１の一実施例の線源線状電子ビ
ーム装置の概略構成図、第２図は本発明の請求項２の一
実施例の線源線状電子ビーム装置の概略構成図、第３図
は本発明の請求項３の一実施例の線源線状電子ビーム装
置の概略構成図、第４図は２個の偏向コイルと線状ビー
ムの位置関係を表した原理図、第５図は本発明の実施例
の線源線状電子ビーム装置の線状ビームプロファイルの
修正方法の概念図、第６図は線状ビームの偏向によるビ
ームプロファイルの変化の概念図を示したものである。
１・・・線状カソード、２・・・ウェネルト電極、３・
・・アノード、４・・・レンズ、５・・・偏向器Ｉ、６
・・・（ｌｉ向器■、７・・・試料、８・・・線状電子
ビーム、９・・・ｘｙテーブル、１０・・・偏向器回転
機構、１１・・・ｙ方向偏向コイル回転機構、１２・・
・偏向コイル１．１３・・・偏向コイル２．１４・・・
偏向コイル３．１５・・・線状電子ビーム。FIG. 1 is a schematic configuration diagram of a source linear electron beam device according to an embodiment of claim 1 of the present invention, and FIG. 2 is a schematic diagram of a source linear electron beam device according to an embodiment of claim 2 of the present invention. 3 is a schematic configuration diagram of a source linear electron beam device according to an embodiment of claim 3 of the present invention, and FIG. 4 shows the positional relationship between two deflection coils and a linear beam. FIG. 5 is a conceptual diagram of a method for modifying the linear beam profile of a linear electron beam device according to an embodiment of the present invention, and FIG. 6 is a conceptual diagram of changes in the beam profile due to deflection of the linear beam. This is what is shown. 1... Linear cathode, 2... Wehnelt electrode, 3...
... Anode, 4... Lens, 5... Deflector I, 6
... (li deflector ■, 7... sample, 8... linear electron beam, 9... xy table, 10... deflector rotation mechanism, 11... y direction deflection coil rotation mechanism , 12...
・Deflection coil 1.13...Deflection coil 2.14...
Deflection coil 3.15... Linear electron beam.
Claims (1)
の１つは、電子ビームの電子光学系の光軸に垂直なＸＹ
平面のＸ軸Ｙ軸用の２組の電磁偏向コイルあるいは２組
の静電偏向板を持ち、残りの１つはＸ軸用の１組の電磁
偏向コイルあるいは１組の静電偏向板を持ち、前記２つ
の偏向器間距離と、最後段の偏向器と電子ビームの被照
射体である試料間の距離とに差を持たせた構造を特徴と
する線源線状電子ビーム装置。 ２、請求項１記載の線源線状電子ビーム装置の２つの偏
向器に電子光学系の光軸を中心に回転する機構を設けた
ことを特徴とする線源線状電子ビーム装置。 ３、請求項２記載の線源線状電子ビーム装置の２つの偏
向器のうち、２組の電磁偏向コイルあるいは２組の静電
偏向板を持つ偏向器のうちの１組の電磁偏向コイルある
いは１組の静電偏向板が独立に電子光学系の光軸を中心
に回転する機構を設けたことを特徴とする線源線状電子
ビーム装置。[Claims] 1. Two deflectors are provided at the rear stage of the lens, and one of the deflectors is arranged in the XY direction perpendicular to the optical axis of the electron optical system of the electron beam.
It has two sets of electromagnetic deflection coils or two sets of electrostatic deflection plates for the X and Y axes of the plane, and the remaining one has one set of electromagnetic deflection coils or one set of electrostatic deflection plates for the X axis. . A linear electron beam source characterized by a structure in which the distance between the two deflectors and the distance between the last stage deflector and the sample which is the object to be irradiated with the electron beam are different. 2. A source linear electron beam device according to claim 1, wherein the two deflectors of the source linear electron beam device are provided with a mechanism for rotating around the optical axis of the electron optical system. 3. Among the two deflectors of the source linear electron beam device according to claim 2, one set of electromagnetic deflection coils of the deflector having two sets of electromagnetic deflection coils or two sets of electrostatic deflection plates, or A linear electron beam device characterized in that a mechanism is provided in which a set of electrostatic deflection plates independently rotates around an optical axis of an electron optical system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22686289A JPH0389440A (en) | 1989-08-31 | 1989-08-31 | Electron beam device having linear source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22686289A JPH0389440A (en) | 1989-08-31 | 1989-08-31 | Electron beam device having linear source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0389440A true JPH0389440A (en) | 1991-04-15 |
Family
ID=16851737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22686289A Pending JPH0389440A (en) | 1989-08-31 | 1989-08-31 | Electron beam device having linear source |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0389440A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001031679A1 (en) * | 1999-10-22 | 2001-05-03 | Varian Semiconductor Equipment Associates, Inc. | Wide parameter range ion beam scanners |
| CN111673259A (en) * | 2020-07-13 | 2020-09-18 | 广东省焊接技术研究所（广东省中乌研究院） | Split type electron beam deflection coil and electron beam equipment |
-
1989
- 1989-08-31 JP JP22686289A patent/JPH0389440A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001031679A1 (en) * | 1999-10-22 | 2001-05-03 | Varian Semiconductor Equipment Associates, Inc. | Wide parameter range ion beam scanners |
| US6521895B1 (en) | 1999-10-22 | 2003-02-18 | Varian Semiconductor Equipment Associates, Inc. | Wide dynamic range ion beam scanners |
| KR100716092B1 (en) * | 1999-10-22 | 2007-05-09 | 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. | Wide parameter range ion beam scanners |
| CN111673259A (en) * | 2020-07-13 | 2020-09-18 | 广东省焊接技术研究所（广东省中乌研究院） | Split type electron beam deflection coil and electron beam equipment |
| CN111673259B (en) * | 2020-07-13 | 2023-10-31 | 广东省焊接技术研究所（广东省中乌研究院） | Split type electron beam deflection yoke and electron beam apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3787417B2 (en) | Electron beam exposure method and electron beam exposure apparatus | |
| US4469950A (en) | Charged particle beam exposure system utilizing variable line scan | |
| JP7474255B2 (en) | Ion implantation systems and methods | |
| US5012105A (en) | Multiple-imaging charged particle-beam exposure system | |
| US6495841B1 (en) | Charged beam drawing apparatus | |
| US7041988B2 (en) | Electron beam exposure apparatus and electron beam processing apparatus | |
| US5099130A (en) | Apparatus and methods relating to scanning ion beams | |
| JP2010500736A (en) | Increased throughput for scanned ion beam implanters. | |
| TW201905956A (en) | Ion implantation system with beam angle control in offset and deceleration modes | |
| JP2002299207A (en) | Charged particle beam lithography device | |
| US5153441A (en) | Electron-beam exposure apparatus | |
| JPH0316775B2 (en) | ||
| EP0035556B1 (en) | Electron beam system | |
| EP0213664A1 (en) | Beam of charged particles divided up into thin component beams | |
| JP2946537B2 (en) | Electron optical column | |
| JPH0389440A (en) | Electron beam device having linear source | |
| KR20220141747A (en) | Charged particle beam writing apparatus | |
| JP3138005B2 (en) | Electron beam drawing equipment | |
| JP2003346698A (en) | Electron beam system and production process of device | |
| US20200211816A1 (en) | Ion implanter and measuring device | |
| JP2003332206A (en) | Aligner using electron beam and processing device using the electronic beam | |
| EP1102303A2 (en) | Electron beam columns | |
| JPH025346A (en) | Ion implanter and adjustment of ion beam | |
| JP7480917B1 (en) | Multi-charged particle beam writing system | |
| JPS6142129A (en) | Charged beam exposure apparatus |