JPH0377317A - Plasma etching apparatus - Google Patents
Plasma etching apparatusInfo
- Publication number
- JPH0377317A JPH0377317A JP21212789A JP21212789A JPH0377317A JP H0377317 A JPH0377317 A JP H0377317A JP 21212789 A JP21212789 A JP 21212789A JP 21212789 A JP21212789 A JP 21212789A JP H0377317 A JPH0377317 A JP H0377317A
- Authority
- JP
- Japan
- Prior art keywords
- period
- ring
- plasma
- vacuum
- plasma etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001020 plasma etching Methods 0.000 title claims description 16
- 239000003566 sealing material Substances 0.000 claims abstract description 9
- 125000004429 atom Chemical group 0.000 claims abstract description 7
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 4
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052794 bromium Inorganic materials 0.000 claims abstract description 4
- 239000001257 hydrogen Substances 0.000 claims abstract description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims abstract description 4
- 230000000737 periodic effect Effects 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 10
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 1
- 125000001309 chloro group Chemical group Cl* 0.000 claims 1
- 238000011109 contamination Methods 0.000 abstract description 12
- 229910052751 metal Inorganic materials 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 5
- 239000011810 insulating material Substances 0.000 abstract description 4
- 229920001296 polysiloxane Polymers 0.000 abstract description 4
- 229910052787 antimony Inorganic materials 0.000 abstract description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 abstract 2
- 229910052740 iodine Inorganic materials 0.000 abstract 2
- 239000011630 iodine Substances 0.000 abstract 2
- 229910052755 nonmetal Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 239000000428 dust Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910001922 gold oxide Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明は、プラズマエツチング装置の改良に係わる。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to improvements in plasma etching equipment.
（従来の技術）
半導体集積回路製造において、ノ・ロゲン原子を含有す
るガスのプラズマを利用するエツチング法、即ちプラズ
マエツチング法は、現在では、無くてはならないものに
なっている。(Prior Art) In the manufacture of semiconductor integrated circuits, an etching method using plasma of a gas containing nitrogen atoms, that is, a plasma etching method, has now become indispensable.
一般に使用されるプラズマエツチング装置は、狭い意味
でのプラズマエツチング装置と反応性イオンエツチング
装置とに大別される。前者は、石英製等の真空容器内に
エツチング基板を入れ、反応性ガスを導入した後、高周
波電力を誘導的または容量的に印加して放電せしめプラ
ズマを発生させる。後者は、ステンレスやアルミニウム
製等の真空容器内に一対の平行平板電極が備えられて訃
シ、反応性ガスを導入した後、平行平板に一方に高周波
電力を容量結合的に印加してプラズマを発生させる。両
者とも、真空容器に用いられる真空シールは、パイトン
のＯリングでなされるのが普通である。そして真空容器
内に生成されるプラズマは、真空容器内の壁面に接し、
壁面自体と反応して汚染を引き起こし、またエツチング
ガスによりてはガス自体が重合して、ゴミを作り出すと
いう難点があった。従っ°Ｃ１プラズマエツチングは、
半導体製造に釦いて必要不可欠が技術でンよあるが、そ
の一方で、エツチング装置から発生する汚染やゴミが集
積回路の歩留り低下の主要な要因となっているのが現状
である。Generally used plasma etching apparatuses are broadly classified into plasma etching apparatuses in a narrow sense and reactive ion etching apparatuses. In the former method, an etching substrate is placed in a vacuum container made of quartz or the like, a reactive gas is introduced, and then high-frequency power is applied inductively or capacitively to cause a discharge and generate plasma. The latter is equipped with a pair of parallel plate electrodes in a vacuum container made of stainless steel or aluminum, and after introducing a reactive gas, high-frequency power is capacitively applied to one side of the parallel plate to generate plasma. generate. In both cases, the vacuum seal used in the vacuum container is usually made with a Piton O-ring. The plasma generated inside the vacuum container then comes into contact with the wall inside the vacuum container,
The problem is that it reacts with the wall surface itself, causing contamination, and, depending on the etching gas, the gas itself polymerizes, creating dust. Therefore, °C1 plasma etching is
Although many technologies are essential to semiconductor manufacturing, contamination and dust generated from etching equipment is currently a major factor in reducing the yield of integrated circuits.
（発明が解決しようとする課題）
前述したように、プラズマエツチング反応性イオンエツ
チング等のプラズマを利用するエツチング装置では、金
属汚染やゴミによる汚染が起こり、歩留すの低下の原因
となってい、た。(Problems to be Solved by the Invention) As mentioned above, in etching equipment that utilizes plasma such as plasma etching and reactive ion etching, metal contamination and dust contamination occur, causing a decrease in yield. Ta.
（課題を解決するための手段）
本発明は、上記事情金鑑みてなされたもので、その目的
とするところは、プラズマエツチング装置に＞ｌ、ｎで
、汚染音低減させる装ｍを提供することにある。(Means for Solving the Problems) The present invention has been made in view of the above circumstances, and its purpose is to provide a plasma etching apparatus with a device for reducing contaminating noise with >l,n. It is in.
発明者らが鋭意検討を行った結果、真空容器の真空シー
ル材料が汚染の重大な原因の一つであるこεが判明した
。As a result of intensive studies by the inventors, it has been found that the vacuum sealing material of the vacuum container is one of the major causes of contamination.
すなわちＡ空シール材料として使用する０リングには、
重金属類が含有されておｐ、Ｑ＋Ｊングが金属発生源の
一つであることが判明した。In other words, the O-ring used as the A-empty sealing material has:
It was found that heavy metals were contained and p, Q+J was one of the sources of metal generation.
真空容器では、シール面には、溝が形成されでおり、こ
の溝にゴム製のＯリング金入れ、対向する側に平滑なシ
ール面を密着させて真空シールする。従って、シール面
とシール面との隙間はきわめて僅かであり、放電画体は
、この狭い隙間中に侵入しない。従って、プラズマ中の
イオンや電子など荷電粒子にＯリングが晒されることは
ない。In the vacuum container, a groove is formed in the sealing surface, and a rubber O-ring holder is placed in the groove, and a smooth sealing surface is brought into close contact with the opposite side for vacuum sealing. Therefore, the gap between the sealing surfaces is extremely small, and the discharge image body does not enter into this narrow gap. Therefore, the O-ring is not exposed to charged particles such as ions and electrons in plasma.
しかし、プラズマ中に多量に存在するラジカルは、長寿
命のためこの狭い隙間に侵入しＯリングと反応する。従
ってラジカルとの反応によう腐食したのリングから重金
属類などが出てくる。また、特に塩素プラズマを用いた
場合、鉄塩化物が生成され、これは蒸気圧が比較的高い
ために、気化して真空容器肉の出てきで、ウェーハを汚
染する。However, the radicals present in large quantities in the plasma have a long lifespan, so they enter this narrow gap and react with the O-ring. Therefore, heavy metals come out from the corroded ring due to reaction with radicals. In addition, especially when using a chlorine plasma, iron chloride is produced which, due to its relatively high vapor pressure, evaporates and contaminates the wafer with the vacuum chamber meat.
したがって、本発明は、上記従来の課題を解決するため
に真空シールに使用するＱ ｉＪソング類、活性な化学
種と反応し−こも、半導体の特性全損なう金属不純物を
含有しないものを用いたドライエツチング装置金提供す
る。Therefore, in order to solve the above-mentioned conventional problems, the present invention provides a QiJ song used for vacuum sealing, which does not contain metal impurities that react with active chemical species and impair the properties of semiconductors. Provide etching equipment.
（作用）
本発明によれば、ドライエツチング装置に使用するＱ
＋）ング材料が半導体にとって悪影響を４える金属類金
含山゛シないために、Ｏリングがプラズマによって侵さ
れても汚染の原因となることがなく、半導体製造におけ
る歩留り全低減させることはない。(Function) According to the present invention, the Q
Since the O-ring material does not contain metals that have a negative effect on semiconductors, even if the O-ring is attacked by plasma, it will not cause contamination and will not reduce the overall yield in semiconductor manufacturing.
（実施例）
以下に、本発明の一実施例を図面を用いて詳細に説明す
る。(Example) Below, one example of the present invention will be described in detail using the drawings.
第１図は本発明の一実施例を示す反応性イオンエツチン
グ装置である。真空容器０）には、ガス導入口（２）及
びガス排気口（３）と、対向電極として陽極（４）及び
陰極（５）が設けられている。前記陰極（５）には高周
波電力が印加される高周波電源（６）が設けられるたと
もに、電極（５）ヲ冷却するための水冷管（７）が設け
られている。（８）はマツチングボックス、（９）は絶
縁材である。FIG. 1 shows a reactive ion etching apparatus showing one embodiment of the present invention. The vacuum container 0) is provided with a gas inlet (2), a gas exhaust port (3), and an anode (4) and a cathode (5) as counter electrodes. The cathode (5) is provided with a high frequency power source (6) to which high frequency power is applied, and is also provided with a water cooling pipe (7) for cooling the electrode (5). (8) is a matching box, and (9) is an insulating material.
ここで陽極（４）は真空容器０）の外壁の一部となって
おり１．これと容器の接続部にシリコン系のＯリング（
１０ａ）が配置され、さらに陰極（５）と絶縁材（９）
の接続部にも同様のＱ ＩＪソング１０ｂ）が配置され
たものとなっている。エツチングする場合、基板（［Ｉ
Ｊは陰極（５）上に載置される。Here, the anode (4) is part of the outer wall of the vacuum container 0), and 1. A silicone O-ring (
10a) is arranged, and further a cathode (5) and an insulating material (9) are arranged.
A similar QIJ song 10b) is also placed at the connection part of the connector. When etching, the substrate ([I
J is placed on the cathode (5).
ここで第１図に示した本発明の実施例の反応性イオンエ
ツチング装（ｔを使用した場合と、真空シール材として
、通常極めて広く使用されているパイトンを用いた反応
性イオンエツチング装置とでエツチング工程に伴う金属
汚染レベルを評価した。Here, the reactive ion etching device according to the embodiment of the present invention shown in FIG. The level of metal contamination associated with the etching process was evaluated.
オす、第２図に示すように、Ｓｉ基板＠１を酸化して表
面に酸化膜（２）金形成し、この基板金弟１図に示すエ
ツチング装置内にいれて真空に引き、次いで塩素ガスを
１分間に２０ ＣＣの速度で導入し、圧力ｆ Ｑ、Ｑ
Ｉ Ｔｏｒｒに保ち、１３．５６ＭＨｚの高周波電力金
印加して放電させ、塩素プラズマ全発生させる。As shown in Figure 2, a Si substrate @1 is oxidized to form a gold oxide film (2) on its surface, placed in an etching apparatus shown in Figure 1, evacuated, and then etched with chlorine. Gas is introduced at a rate of 20 CC per minute, and the pressure f Q, Q
The temperature was maintained at I Torr, and a high frequency power of 13.56 MHz was applied to cause discharge, thereby completely generating chlorine plasma.
３分間基板（２１Ｊを塩素プラズマに晒した後、真空容
器から取う出し、表面の酸化膜をぶつ酸に溶かし、その
溶液中に含まれる金属原子の量を原子吸光法によシ分析
した。これと全く同様にパイトンの０リングを用いた反
応性イオンエツチング装［ｔ−用いてエツチングを行っ
た。第３図は、分析された金属原子の量である。明らか
に、本発明実施例のようにシリコン系のＯリングを使用
した場合（ｂ）は、パイトンのＯリングを使用した従来
の場合（ａ）に比較して金属汚染が少ないことがわかる
。After exposing the substrate (21J) to chlorine plasma for 3 minutes, it was taken out from the vacuum container, the oxide film on the surface was dissolved in hydric acid, and the amount of metal atoms contained in the solution was analyzed by atomic absorption spectroscopy. Etching was carried out using a reactive ion etching system using a Piton O-ring in exactly the same way. Figure 3 shows the amount of metal atoms analyzed. It can be seen that when a silicon O-ring is used (b), there is less metal contamination than in the conventional case (a) when a Piton O-ring is used.
シリコン系のゴムは、耐熱性もあう、使用し易い材料と
いう点で特にすぐれているが汚染を防止するという観点
からは、基本的には金属を含有していない真空シール材
料であれば、本発明による効果を得ることが出来る。例
えば、周期律表第１周期から第３周期、第３属から第７
属に含まれる非金属原子および水素、ひ素、アンチモン
、臭素、よう素のいずれか、又はその組み合わせによう
構成された真空シール材料が使用できる。また、エツチ
ング装置としては、プラズマを用いる他のエツチング装
置でもよい。Silicone-based rubber is particularly excellent in terms of its heat resistance and ease of use, but from the perspective of preventing contamination, basically any vacuum sealing material that does not contain metal is the best choice. It is possible to obtain the effects of the invention. For example, periods 1 to 3 of the periodic table, genus 3 to 7
Vacuum sealing materials configured with nonmetallic atoms included in the genus and any of hydrogen, arsenic, antimony, bromine, iodine, or combinations thereof can be used. Further, as the etching device, other etching devices using plasma may be used.
以上述べたように、従来金属原子を含有する０リングが
プラズマ中の活性種と反応して被処理基板を汚染してい
たが、本発明を用いることにょうそのような汚染が低減
され、半導体素子の特性を損なうことが低減される。As described above, conventional O-rings containing metal atoms react with active species in plasma and contaminate the substrate to be processed. However, by using the present invention, such contamination can be reduced, and semiconductor Damage to the characteristics of the element is reduced.
第１図は、本発明の一実施例を示すエツチング装置の概
略図、第２図は、本発明の効果を検証するに当たｂ使用
した基板の構成を示す断面図、第３図は、本発明の効果
を示す特性図である。
１・・・真空容器、５・・・陰極、４・・・陽極、２・
・・ガス導入口、３・・・排気口、８・・・マツチング
ボックス、６・・・高周波電源、９・・・絶縁材、７・
・・水冷管、１０ ａ 、 １０’ｂ−０リング、１１
−・・基板、２０−・・８１ 基板、２１・・・酸化膜
。FIG. 1 is a schematic diagram of an etching apparatus showing an embodiment of the present invention, FIG. 2 is a sectional view showing the configuration of a substrate used to verify the effects of the present invention, and FIG. FIG. 3 is a characteristic diagram showing the effects of the present invention. 1... Vacuum container, 5... Cathode, 4... Anode, 2...
... Gas inlet, 3... Exhaust port, 8... Matching box, 6... High frequency power supply, 9... Insulating material, 7...
・・Water-cooled pipe, 10a, 10'b-0 ring, 11
-...Substrate, 20-...81 Substrate, 21... Oxide film.
Claims (2)
させ、生じた活性種を用いて被エッチング材料のエッチ
ングを行うプラズマエッチング装置において、前記真空
容器の一部は真空シール材が用いられ、かつ前記真空シ
ール材として周期律表の第１周期から第３周期、第３属
から第７属に含まれる非金属原子および水素、ひ素、ア
ンモン、臭素、よう素のうちいずれか、またはそれらの
組み合せにより構成されたものを用いることを特徴とす
るプラズマエッチング装置。(1) In a plasma etching apparatus that discharges a gas containing halogen atoms in a vacuum container and etches a material to be etched using the generated active species, a vacuum sealing material is used for a part of the vacuum container, And, as the vacuum sealing material, any one of nonmetallic atoms included in the first period to the third period and the third to seventh groups of the periodic table, hydrogen, arsenic, ammonium, bromine, and iodine, or any of them. A plasma etching apparatus characterized by using a combination of devices.
する請求項１記載のプラズマエッチング装置。(2) The plasma etching apparatus according to claim 1, wherein the halogen atom is a chlorine atom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21212789A JPH0377317A (en) | 1989-08-19 | 1989-08-19 | Plasma etching apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21212789A JPH0377317A (en) | 1989-08-19 | 1989-08-19 | Plasma etching apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0377317A true JPH0377317A (en) | 1991-04-02 |
Family
ID=16617337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21212789A Pending JPH0377317A (en) | 1989-08-19 | 1989-08-19 | Plasma etching apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0377317A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006066744A (en) * | 2004-08-27 | 2006-03-09 | Tokyo Institute Of Technology | Solid source etching device and method therefor |
-
1989
- 1989-08-19 JP JP21212789A patent/JPH0377317A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006066744A (en) * | 2004-08-27 | 2006-03-09 | Tokyo Institute Of Technology | Solid source etching device and method therefor |
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