JPH0375355A - Film forming device - Google Patents
Film forming deviceInfo
- Publication number
- JPH0375355A JPH0375355A JP21138889A JP21138889A JPH0375355A JP H0375355 A JPH0375355 A JP H0375355A JP 21138889 A JP21138889 A JP 21138889A JP 21138889 A JP21138889 A JP 21138889A JP H0375355 A JPH0375355 A JP H0375355A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- source
- film
- electron beam
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 238000010894 electron beam technology Methods 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 20
- 239000010408 film Substances 0.000 claims description 26
- 230000008020 evaporation Effects 0.000 claims description 12
- 238000001704 evaporation Methods 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 2
- 239000004033 plastic Substances 0.000 abstract description 8
- 229920003023 plastic Polymers 0.000 abstract description 8
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 16
- 150000002500 ions Chemical class 0.000 description 16
- 239000000126 substance Substances 0.000 description 8
- 238000010884 ion-beam technique Methods 0.000 description 7
- 239000011810 insulating material Substances 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、主としてプラスチック材や絶縁材への基板へ
の成膜に適した蒸発源或はスパッタ源からなる成膜物質
放出源を備えた成膜装置に関する。[Detailed Description of the Invention] (Industrial Application Field) The present invention is provided with a film-forming substance emitting source consisting of an evaporation source or a sputtering source suitable for film-forming on a substrate mainly made of plastic materials or insulating materials. It relates to a film forming apparatus.
（従来の技術）
従来、成膜装置として、例えば第１図に見られるように
、真空室ａ内に成膜物質放出源を構成する蒸発源すと基
板ホルダＣに保持した基板ｄとを対向して設け、該蒸発
源すの側方に該基板ｄに向けてイオンビームｅを放射す
るイオン銃ｆを設けるようにしたものが知られている。(Prior Art) Conventionally, as shown in FIG. 1, for example, in a film forming apparatus, an evaporation source constituting a film forming material release source in a vacuum chamber a and a substrate d held in a substrate holder C are placed facing each other. It is known that an ion gun f for emitting an ion beam e toward the substrate d is provided on the side of the evaporation source.
この成膜装置は、基板ｄを成膜に先立ちクリーニングし
、イオンビームを基板ｄに照射し乍らの成膜即ちイオン
アシスト成膜を行なうもので、真空室ａ内を排気口ｇか
ら１０−４〜１Ｏ−７Ｔｏｒｒの高真空に排気したのち
、イオン銃ｆへこれに接続したガス導入管りからガスを
導入すると共にイオン銃制御用電源ｉから電力を供給し
、該イオン銃ｆから基板ｄに向かうイオンビームを発生
させ、まず該基板ｄの表面をクリーニングし、次いで蒸
発用型ａｔＸｊから蒸発源すへ電力を供給してその内部
の蒸発材ｋを昇華又は溶解させて基板ｄに堆積させると
共に基板ｄにイオン銃ｆからイオンビームを照射する。This film-forming apparatus cleans the substrate d before film-forming and performs film-forming while irradiating the substrate d with an ion beam, that is, ion-assisted film-forming. After evacuation to a high vacuum of 4 to 1 O-7 Torr, gas is introduced into the ion gun f from the gas introduction pipe connected to it, and power is supplied from the ion gun control power supply i, and the substrate d is transferred from the ion gun f. generate an ion beam directed toward the substrate d, first clean the surface of the substrate d, then supply power from the evaporation mold atXj to the evaporation source to sublimate or melt the evaporation material k therein and deposit it on the substrate d At the same time, the substrate d is irradiated with an ion beam from the ion gun f.
これによれば、基板ｄがイオンビームによりクリーニン
グされるので密着性の良い膜を基板ｄに形成出来、また
膜中の不足する成分をイオン銃ｆのガス導入管りに導入
するガスのイオンにより補充して膜質を改善することが
出来る。According to this, since the substrate d is cleaned by the ion beam, a film with good adhesion can be formed on the substrate d, and missing components in the film are removed by the ions of the gas introduced into the gas introduction pipe of the ion gun f. It can be replenished to improve membrane quality.
（発明が解決しようとする課題）
前記イオンアシスト式の成膜装置では、アシスト用にイ
オンビームを使用しているので、基板の堆積によっては
イオン（質量が大きい）の突入するエネルギーでダメー
ジを生じ、特にプラスチック等の軟らかい基板では表面
の組成が破壊される不都合があった。また、絶縁材の基
板では、イオンによるチャージが生じ、基板面での異常
放電を誘発するので逆に膜質を低下させてしまう欠点が
あった。例えば、基板がアクリル、ポリカーボネート等
のプラスチック材である場合、イオンのエネルギーが大
きすぎるため、基板のＣＨ２核が分解し、Ｃが基板表面
に析出して蒸発材との密着性が悪化する不都合を生じ、
絶縁基板ではイオンが基板面に集まり、基板内の放電が
発生して基板が損傷する不都合があった。(Problems to be Solved by the Invention) The ion-assisted film forming apparatus uses an ion beam for assist, so depending on the substrate being deposited, the energy of the ions (having a large mass) entering may cause damage. However, especially for soft substrates such as plastic, the composition of the surface may be destroyed. Further, in the case of a substrate made of an insulating material, charging by ions occurs and abnormal discharge is induced on the surface of the substrate, which has the disadvantage of degrading the film quality. For example, when the substrate is made of plastic material such as acrylic or polycarbonate, the energy of the ions is too large, causing the CH2 nuclei of the substrate to decompose and C to precipitate on the substrate surface, resulting in poor adhesion with the evaporation material. arise,
An inconvenient problem with an insulating substrate is that ions gather on the surface of the substrate, causing discharge within the substrate and damaging the substrate.
本発明はかかる不都合、欠点を解消することを目的とす
るものである。The present invention aims to eliminate such inconveniences and drawbacks.
（課題を解決するための手段）
本発明では、真空室内に、蒸発源或はスパッタ源からな
る成膜物質放出源と該成膜物質放出源からの放出物の薄
膜が形成される基板とを互に対向して設けた成膜装置に
於て、該基板に向けて電子ビームを照射する電子ビーム
源を設けることにより、前記目的を達成するようにした
。(Means for Solving the Problems) In the present invention, a film-forming substance emitting source consisting of an evaporation source or a sputtering source and a substrate on which a thin film of the emitted material from the film-forming substance emitting source are formed in a vacuum chamber. The above object is achieved by providing electron beam sources that irradiate electron beams toward the substrate in film forming apparatuses that are disposed facing each other.
（作 用）
真空室内を高真空に排気したのち、電子ビーム源に導入
したガスを電子ビーム化し、これを基板に向けて照射す
ることにより該基板の表面をクリーニングする。続いて
成膜物質放出源を作動させると共に該電子ビームを基板
に照射すると、該放出源からの放出物の一部が電子ビー
ムの照射を受けてイオン化するので基板面に強固に付着
堆積する。この場合、該基板の表面はイオンよりも重さ
が約１８００分の１と軽い電子の照射を受けてクリーニ
ングされるので、基板を損傷することなく、基板表面に
付着している汚れ（主に８２０ ＳＣＳＯ等のガス）を
除去し乍ら成膜することが出来、絶縁基板であってもそ
の表面にイオンが集まることがなく異常放電を生ずるこ
とがない。(Function) After the vacuum chamber is evacuated to a high vacuum, the gas introduced into the electron beam source is converted into an electron beam, and the substrate is irradiated with the electron beam to clean the surface of the substrate. Subsequently, when the film-forming substance emission source is activated and the substrate is irradiated with the electron beam, a part of the emission from the emission source is ionized by the electron beam irradiation and is thus firmly attached and deposited on the substrate surface. In this case, the surface of the substrate is cleaned by irradiation with electrons, which are about 1/1800 times lighter in weight than ions, so that the surface of the substrate is cleaned without damaging the substrate. The film can be formed while removing gases such as 820 SCSO, and even if the substrate is an insulating substrate, ions will not collect on the surface and no abnormal discharge will occur.
（実施例）
本発明の実施例を図面第２図に基づき説明すると、同図
に於て符号（１）は真空排気口（２）を備えた真空室、
（３）は該真空室（１）の下方に設けた抵抗加熱式の蒸
発源からなる成膜物質放出源、（４）は該成膜物質放出
源（３）の上方にこれと対向して設けたプラスチック材
或は絶縁材等からなる基板、（５）は基板ホルダ、〈６
）は蒸発用電源、（７）は８１０２、ＭｇＦ２、ＴｌＯ
２、ＺｎＯ２等の成膜原料である。(Embodiment) An embodiment of the present invention will be described based on FIG. 2 of the drawing.
(3) is a film-forming substance emission source consisting of a resistance heating type evaporation source installed below the vacuum chamber (1), and (4) is a film-forming substance emission source located above the film-forming substance emission source (3) and opposite to this. A substrate made of a plastic material or an insulating material, (5) a substrate holder, <6
) is the evaporation power supply, (7) is 8102, MgF2, TlO
2. It is a film forming raw material such as ZnO2.
こうした構成は従来のものと変わりがないが、本発明の
ものでは、該真空室（１）内に該基板（４）に向けて電
子ビームを照射する自己加速型電子銃等からなる電子ビ
ーム源（８）を設けるようにしたもので、図示の例では
、該真空室（１）の外部からガス導入管（９）及び電子
ビーム用電源（１０からの配線を導入してこれらを電子
ビーム源（８）に接続するようにした。該ガス導入管（
９〉には、必要に応じて０２ガス、フロン系ガス、Ａｒ
ガス等が導入される。This configuration is the same as the conventional one, but in the one of the present invention, an electron beam source consisting of a self-accelerating electron gun or the like that irradiates an electron beam toward the substrate (4) in the vacuum chamber (1). (8), and in the illustrated example, a gas introduction tube (9) and wiring from an electron beam power source (10) are introduced from outside the vacuum chamber (1) to connect these to the electron beam source. (8).The gas introduction pipe (
9>, 02 gas, fluorocarbon gas, Ar
Gas etc. are introduced.
該基板（４）に成膜を行なう場合、まず真空室（１）内
を排気口（２）から１０−’ 〜１０−’Ｔｏｒｒの高
真空に排気し、ガス導入口〈９〉から電子ビーム源（８
〉に例えばＡｒガスを導入すると共に電源（１０から電
力を供給し、電子ビーム源（８）から電子ビームを基板
（４）に向けて照射してその表面のＨ２Ｏ等の付着物を
クリーニングする。次で成膜物質放出源（３）に電源（
６）から電力を供給し、成膜原料（７）を昇華或は溶解
させて基板（４）に成膜物質を堆積させ乍ら再びガス導
入管（９）にＡｒガスを導入して電子ビーム源（８）か
ら電子ビームを照射すると該基板（４）に向かう成膜物
質の一部がイオン化され、基板（４）に密着性良く成膜
物質が堆積する。基板〈４〉がプラスチック材である場
合、電子ビームの照射でクリーニングされてもイオンビ
ームによるクリーニングのように基板（４）が損傷する
ことがなく、また８１０２等の光学膜を基板（４〉に成
膜する場合、ガス導入口（９）から０２ガスを導入すれ
ば膜組成中に不足し勝ちなＯ成分を電子ビーム源（８）
から基板面に補給し、成分比の良い膜を基板（４〉に形
成出来る。更に基板（４）が絶縁材の場合、多くのイオ
ンが基板面に集まることがなく、異常放電の発生が少な
くなる。When forming a film on the substrate (4), first, the inside of the vacuum chamber (1) is evacuated to a high vacuum of 10-' to 10-' Torr from the exhaust port (2), and an electron beam is injected from the gas inlet port <9>. source (8
For example, Ar gas is introduced into the substrate (4), and power is supplied from a power source (10), and an electron beam is irradiated from an electron beam source (8) toward the substrate (4) to clean the surface of the substrate (4) to remove deposits such as H2O. Next, power supply (
6) to sublimate or melt the film forming material (7) and deposit the film forming material on the substrate (4), while introducing Ar gas into the gas introduction tube (9) again to generate an electron beam. When an electron beam is irradiated from the source (8), a part of the film-forming material directed toward the substrate (4) is ionized, and the film-forming material is deposited on the substrate (4) with good adhesion. When the substrate (4) is made of a plastic material, the substrate (4) will not be damaged even if it is cleaned by electron beam irradiation unlike cleaning by an ion beam, and an optical film such as 8102 will not be damaged on the substrate (4). When forming a film, if 02 gas is introduced from the gas inlet (9), the O component, which tends to be insufficient in the film composition, can be removed from the electron beam source (8).
A film with a good component ratio can be formed on the substrate (4) by replenishing it to the substrate surface.Furthermore, if the substrate (4) is an insulating material, many ions will not gather on the substrate surface, reducing the occurrence of abnormal discharge. Become.
尚、成膜物質放出源（３）としてスパッタ源を使用する
ことも可能であり、電子ビーム源（８）としてホローカ
ソード電子銃を使用してもよい。Note that a sputtering source may be used as the film-forming material emission source (3), and a hollow cathode electron gun may be used as the electron beam source (8).
（発明の効果）
以上のように本発明によるときは、蒸発源等の成膜物質
放出源により基板に成膜を行なう装置に於て、電子ビー
ム源を設けて基板に電子ビームを照射するようにしたの
で、基板を損傷させずにクリーニングすることが出来る
と共に密着性と膜質の良い成膜を行なえ、特にプラスチ
ック基板、絶縁基板の成膜に有効に適用出来る等の効果
がある。(Effects of the Invention) As described above, according to the present invention, an electron beam source is provided to irradiate the substrate with an electron beam in an apparatus that forms a film on a substrate using a film forming material emission source such as an evaporation source. As a result, it is possible to clean the substrate without damaging it, and to form a film with good adhesion and film quality, and it has the advantage that it can be particularly effectively applied to film formation on plastic substrates and insulating substrates.
第１図は従来の成膜装置の概略断面図、第２図は本発明
の実施例の概略断面図である。
（１）・・・真空室
（３）・・・成膜物質放出源
（４〉・・・基 板
（８）・・・電子ビーム源FIG. 1 is a schematic sectional view of a conventional film forming apparatus, and FIG. 2 is a schematic sectional view of an embodiment of the present invention. (1)... Vacuum chamber (3)... Film-forming substance emission source (4>... Substrate (8)... Electron beam source
Claims (1)
放出源と該成膜物質放出源からの放出物の薄膜が形成さ
れる基板とを互に対向して設けた成膜装置に於て、該基
板に向けて電子ビームを照射する電子ビーム源を設けた
ことを特徴とする成膜装置。In a film forming apparatus, a film forming material emitting source consisting of an evaporation source or a sputtering source and a substrate on which a thin film of the emitted material from the film forming material emitting source is formed are provided in a vacuum chamber, facing each other. A film forming apparatus comprising: an electron beam source that irradiates an electron beam toward the substrate;
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21138889A JPH0375355A (en) | 1989-08-18 | 1989-08-18 | Film forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21138889A JPH0375355A (en) | 1989-08-18 | 1989-08-18 | Film forming device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0375355A true JPH0375355A (en) | 1991-03-29 |
Family
ID=16605135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21138889A Pending JPH0375355A (en) | 1989-08-18 | 1989-08-18 | Film forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0375355A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5650024A (en) * | 1993-12-28 | 1997-07-22 | Nippon Steel Corporation | Martensitic heat-resisting steel excellent in HAZ-softening resistance and process for producing the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5538425A (en) * | 1978-09-08 | 1980-03-17 | Kubota Ltd | Method for waste disposal |
| JPS61183813A (en) * | 1985-02-08 | 1986-08-16 | トヨタ自動車株式会社 | Formation of conductive film |
-
1989
- 1989-08-18 JP JP21138889A patent/JPH0375355A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5538425A (en) * | 1978-09-08 | 1980-03-17 | Kubota Ltd | Method for waste disposal |
| JPS61183813A (en) * | 1985-02-08 | 1986-08-16 | トヨタ自動車株式会社 | Formation of conductive film |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5650024A (en) * | 1993-12-28 | 1997-07-22 | Nippon Steel Corporation | Martensitic heat-resisting steel excellent in HAZ-softening resistance and process for producing the same |
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