JPH0373083B2 - - Google Patents
Info
- Publication number
- JPH0373083B2 JPH0373083B2 JP57020257A JP2025782A JPH0373083B2 JP H0373083 B2 JPH0373083 B2 JP H0373083B2 JP 57020257 A JP57020257 A JP 57020257A JP 2025782 A JP2025782 A JP 2025782A JP H0373083 B2 JPH0373083 B2 JP H0373083B2
- Authority
- JP
- Japan
- Prior art keywords
- transparent electrode
- forming
- transparent
- electrode
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 238000007747 plating Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 239000011521 glass Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- IEJHYFOJNUCIBD-UHFFFAOYSA-N cadmium(2+) indium(3+) oxygen(2-) Chemical compound [O-2].[Cd+2].[In+3] IEJHYFOJNUCIBD-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Description
【発明の詳細な説明】
(a) 発明の技術分野
本発明は低抵抗の透明電極を形成する方法に係
り、さらに具体的には透明電極に低抵抗金属の補
助電極を付設する方法の改良に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a method for forming a low resistance transparent electrode, and more specifically to an improvement in a method for attaching a low resistance metal auxiliary electrode to a transparent electrode. It is something.
(b) 従来技術と問題点
例えばエレクトロルミネツセンス表示装置や液
晶表示装置のようなデイスプレイパネル等に用い
られる透明電極の低抵抗化を図るために、透明電
極に低抵抗金属の補助電極を付設する方法が採ら
れている。すなわち、第１図および第２図に示す
ように、例えばガラス基板１上に線状の透明電極
２を形成し、その透明電極２上面の両側（あるい
は片側）に低抵抗金属の線幅の細い補助電極３を
配設した構成が採られている。ところで、従来こ
のような補助電極３の形成は、透明電極２とは別
のホトリソグラフ工程で形成しており、工程数の
増加、目合せの必要性、さらに使用するホトマス
クの加工限界により補助電極３の幅の下限が制限
されるという問題があつた。(b) Prior art and problems In order to reduce the resistance of transparent electrodes used in display panels such as electroluminescent display devices and liquid crystal display devices, auxiliary electrodes made of low resistance metal are attached to transparent electrodes. A method has been adopted to do so. That is, as shown in FIGS. 1 and 2, for example, a linear transparent electrode 2 is formed on a glass substrate 1, and a thin line of low resistance metal is formed on both sides (or one side) of the upper surface of the transparent electrode 2. A configuration in which an auxiliary electrode 3 is provided is adopted. By the way, the auxiliary electrode 3 has conventionally been formed in a photolithography process separate from that of the transparent electrode 2, and due to the increased number of steps, the need for alignment, and the processing limitations of the photomask used, the auxiliary electrode There was a problem that the lower limit of the width of 3 was limited.
(c) 発明の目的
本発明は前述の点に鑑みなされたもので、工程
が簡単で、しかも線幅が細く透明電極の透明性を
充分維持できる補助電極の形成方法の提供を目的
とするものである。(c) Purpose of the Invention The present invention has been made in view of the above-mentioned points, and an object of the present invention is to provide a method for forming an auxiliary electrode that has a simple process, has a narrow line width, and can maintain sufficient transparency of the transparent electrode. It is.
(d) 発明の構成
本発明は、両側端縁部に細幅の金属層を有する
透明電極を形成する方法であつて、絶縁基板上に
透明導電膜を形成した後所定形状の絶縁物を被覆
し、該透明導電膜をエツチングして所定形状の透
明電極を形成する工程、前記絶縁物を残した状態
で金属メツキ処理を施して、該絶縁物で被覆され
ない透明電極の端縁部に金属メツキ層を形成する
工程を含んでなることを特徴とするものである。(d) Structure of the Invention The present invention is a method for forming a transparent electrode having a narrow metal layer on both side edges, which comprises forming a transparent conductive film on an insulating substrate and then covering the insulating material with a predetermined shape. and a step of etching the transparent conductive film to form a transparent electrode in a predetermined shape, performing metal plating with the insulator remaining, and metal plating the edges of the transparent electrode that are not covered with the insulator. The method is characterized in that it includes a step of forming a layer.
(e) 発明の実施例
以下、本発明の実施例につき図面を参照して説
明する。(e) Embodiments of the invention Examples of the invention will be described below with reference to the drawings.
第３図〜第６図は本発明による透明電極の形成
方法を説明するための要部断面図で順次に示した
工程図である。まず第３図に示すように、ガラス
基板１１上に例えばインジウム錫酸化物（ITO）
の透明電極となるべき透明導電膜１２ａ（例えば
膜厚1μｍ程度）を形成し、その導電膜１２ａ上
に所定パターンの例えばポジ形ホトレジスト層１
３をパターニングする。そして前記ホトレジスタ
層１３をマスクとして透明導電膜１２ａをエツチ
ングすることにより、第４図に示すように、ガラ
ス基板１１上に所定パターンの透明電極１２ｂを
形成する。この際エツチング液として塩酸を用
い、40℃の液温でエツチングを行うと、透明電極
１２ｂの端縁部が傾斜をもつた形状となる。しか
る後、前記ホトレジスト層１３を除去しないで、
透明電極１２ｂの上面をそのホトレジスト層１３
で被覆した状態で、例えば硫酸銅と硫酸の電解液
を用いて、前記透明電極１２ｂを陰極として電解
メツキを行うと、第５図に示すごとく、透明電極
１２ｂの端縁部のみに銅からなる金属メツキ層１
４が形成される。そしてホトレジスト層１３を除
去すると第６図に示すように、ガラス基板１１上
には両側に銅の金属メツキ層１４で構成される低
抵抗の補助電極を付設した透明電極１２ｂが得ら
れる。 3 to 6 are process diagrams sequentially shown in cross-sectional views of main parts for explaining the method of forming a transparent electrode according to the present invention. First, as shown in FIG. 3, for example, indium tin oxide (ITO) is deposited on the glass substrate 11
A transparent conductive film 12a (for example, about 1 μm thick) is formed to become a transparent electrode, and a predetermined pattern of, for example, a positive photoresist layer 1 is formed on the conductive film 12a.
Pattern 3. Then, by etching the transparent conductive film 12a using the photoresist layer 13 as a mask, a predetermined pattern of transparent electrodes 12b is formed on the glass substrate 11, as shown in FIG. At this time, when hydrochloric acid is used as an etching solution and etching is performed at a solution temperature of 40.degree. C., the edge portion of the transparent electrode 12b has a sloped shape. After that, without removing the photoresist layer 13,
The upper surface of the transparent electrode 12b is covered with its photoresist layer 13.
When the transparent electrode 12b is coated with copper and subjected to electrolytic plating using an electrolytic solution of copper sulfate and sulfuric acid, for example, with the transparent electrode 12b as a cathode, as shown in FIG. 5, only the edge portion of the transparent electrode 12b is made of copper. Metal plating layer 1
4 is formed. When the photoresist layer 13 is removed, as shown in FIG. 6, a transparent electrode 12b is obtained on the glass substrate 11 with low resistance auxiliary electrodes made of copper metal plating layers 14 on both sides.
このように本発明によれば、透明電極１２ｂを
形成する際に用いたホトレジスト層１３をマスク
として、透明電極１２ｂの端縁部に補助電極とな
る低抵抗の金属メツキ層１４を形成することがで
きるので、工程の簡略化が可能となる。また透明
電極１２ｂをパターンニングする際のエツチング
液温や組成などのエツチング条件により、透明電
極１２ｂ端縁部に形成される傾斜を変えて、金属
メツキ層１４つまり補助電極の幅も制御すること
ができる。 As described above, according to the present invention, the low-resistance metal plating layer 14, which will serve as an auxiliary electrode, can be formed at the edge of the transparent electrode 12b using the photoresist layer 13 used when forming the transparent electrode 12b as a mask. This makes it possible to simplify the process. Furthermore, the width of the metal plating layer 14, that is, the auxiliary electrode, can be controlled by changing the slope formed at the edge of the transparent electrode 12b by changing the etching conditions such as the temperature and composition of the etching solution when patterning the transparent electrode 12b. can.
なお、透明電極１２ｂは前述のITOの他にイン
ジウムカドミウム酸化物（In2O3：CdO）や酸化
錫（SnO2）等でもよいし、前記金属メツキ層１
４は銅以外に銀（Ag）、金（Au）等の他の金属
で形成することもできる。さらに金属メツキ層の
形成は電解メツキ以外に無電解メツキによること
も可能である。 Note that the transparent electrode 12b may be made of indium cadmium oxide (In 2 O 3 :CdO), tin oxide (SnO 2 ), etc. other than the above-mentioned ITO,
4 can also be formed of other metals such as silver (Ag) and gold (Au) in addition to copper. Furthermore, the metal plating layer can be formed by electroless plating in addition to electrolytic plating.
(f) 発明の効果
以上の発明から明らかなように本発明によれ
ば、簡単な工程により、透明電極の大部分の透明
性を損なうことなく透明電極の低抵抗化が可能と
なり、エレクトロルミネツセンス表示装置や液晶
表示装置のようなデイスプレイパネルや座標検出
パネル等における透明電極の抵抗が高いことに起
因する障害を除去できる等の効果がある。(f) Effects of the Invention As is clear from the invention described above, according to the present invention, it is possible to reduce the resistance of a transparent electrode by a simple process without impairing the transparency of most of the transparent electrode, and it is possible to reduce the resistance of an electroluminescent electrode. There are effects such as being able to eliminate problems caused by high resistance of transparent electrodes in display panels such as sense display devices and liquid crystal display devices, coordinate detection panels, and the like.
第１図は従来の透明電極の形成方法を説明する
ための要部上面図、第２図は第１図におけるＡ−
A′断面図、第３図〜第６図は本発明による透明
電極の形成方法を説明するための要部断面図で順
次に示した工程図である。
図面において、１１はガラス基板、１２ａは透
明導電膜、１２ｂは透明電極、１３はホトレジス
ト層、１４は金属メツキ層をそれぞれ示す。
FIG. 1 is a top view of the main parts for explaining the conventional method of forming transparent electrodes, and FIG. 2 is A--A in FIG.
The A' sectional view and FIGS. 3 to 6 are process diagrams sequentially shown in sectional views of main parts for explaining the method of forming a transparent electrode according to the present invention. In the drawings, 11 is a glass substrate, 12a is a transparent conductive film, 12b is a transparent electrode, 13 is a photoresist layer, and 14 is a metal plating layer.
Claims (1)
を形成する方法であつて、 絶縁基板１１上に透明導電膜１２ａを形成した
後所定形状の絶縁物１３を被覆し、該透明導電膜
をエツチングして所定形状の透明電極１２ｂを形
成する工程、 前記絶縁物１３を残した状態で金属メツキ処理
を施して、該絶縁物で被覆されない透明電極１２
ｂの端縁部に金属メツキ層１４を形成する工程 を含んでなることを特徴とする透明電極の形成方
法。[Claims] 1. A method for forming a transparent electrode having a narrow metal layer on both side edges, which comprises forming a transparent conductive film 12a on an insulating substrate 11 and then covering an insulator 13 in a predetermined shape. and a step of etching the transparent conductive film to form a transparent electrode 12b in a predetermined shape, and performing a metal plating process with the insulator 13 remaining to remove the transparent electrode 12 not covered with the insulator.
A method for forming a transparent electrode, the method comprising the step of forming a metal plating layer 14 on the edge portion of b.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025782A JPS58137908A (en) | 1982-02-09 | 1982-02-09 | Method of forming transparent electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025782A JPS58137908A (en) | 1982-02-09 | 1982-02-09 | Method of forming transparent electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58137908A JPS58137908A (en) | 1983-08-16 |
| JPH0373083B2 true JPH0373083B2 (en) | 1991-11-20 |
Family
ID=12022137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025782A Granted JPS58137908A (en) | 1982-02-09 | 1982-02-09 | Method of forming transparent electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58137908A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS614212A (en) * | 1984-06-18 | 1986-01-10 | Canon Inc | Manufacture of sheet coil |
| JPS616817A (en) * | 1984-06-20 | 1986-01-13 | Canon Inc | Manufacture of sheet coil |
| WO2011111650A1 (en) * | 2010-03-09 | 2011-09-15 | 太陽誘電株式会社 | Conductor structure, transparent device, and electronic device |
-
1982
- 1982-02-09 JP JP2025782A patent/JPS58137908A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58137908A (en) | 1983-08-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4336295A (en) | Method of fabricating a transparent metal oxide electrode structure on a solid-state electrooptical device | |
| WO2018157814A1 (en) | Touch screen manufacturing method, touch screen ,and display device | |
| GB1435319A (en) | Devices comprising a trasnparent insulating support having an applied pattern of conductors | |
| JP2002303877A (en) | Array substrate for liquid crystal display device and method for manufacturing it | |
| JPH0580650B2 (en) | ||
| JPH0373083B2 (en) | ||
| JP3259119B2 (en) | Wiring pattern substrate, thin film transistor matrix substrate and method of manufacturing the same | |
| JPH02281237A (en) | Electrode structure of display device | |
| EP0236938A2 (en) | Method for prevention of short circuiting whilst fabricating amorphous silicium thin-film solar cells | |
| JPH0340451B2 (en) | ||
| JPH0558653B2 (en) | ||
| JP2755707B2 (en) | Method for manufacturing photovoltaic device | |
| JPH0239044B2 (en) | ||
| JPH0815733A (en) | Thin film transistor panel and its production | |
| JPS5914237A (en) | Production method of gas discharge panel | |
| JPH0195559A (en) | Manufacture of thin-film transistor | |
| JPH02130551A (en) | Thin film pattern and production thereof as well as matrix circuit board formed by using this pattern and image display device | |
| JPS61134786A (en) | Display unit | |
| JPH05151840A (en) | Forming method for transparent electrode | |
| TW202337279A (en) | A conductive structure and a method for manufacturing the same | |
| JPS6060623A (en) | Electrode structure of liquid crystal display element | |
| JPS60146220A (en) | Production of electrode for liquid crystal matrix display panel | |
| JPH02275417A (en) | Thin film transistor for display element | |
| JPH03296024A (en) | Mim liquid crystal panel and its manufacture | |
| JPH05114613A (en) | Active matrix board and manufacture thereof |