JPH0369111A - Heat treatment - Google Patents
Heat treatmentInfo
- Publication number
- JPH0369111A JPH0369111A JP20553089A JP20553089A JPH0369111A JP H0369111 A JPH0369111 A JP H0369111A JP 20553089 A JP20553089 A JP 20553089A JP 20553089 A JP20553089 A JP 20553089A JP H0369111 A JPH0369111 A JP H0369111A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- heat treatment
- cooling
- cooling device
- hot plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 77
- 239000004065 semiconductor Substances 0.000 claims abstract description 49
- 238000001816 cooling Methods 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims description 17
- 239000012212 insulator Substances 0.000 abstract description 4
- 239000000112 cooling gas Substances 0.000 abstract description 3
- 238000010030 laminating Methods 0.000 abstract 3
- 235000012431 wafers Nutrition 0.000 description 36
- 238000012545 processing Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- 238000011109 contamination Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- -1 quartz Chemical class 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 210000000689 upper leg Anatomy 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は半導体ウェハの熱処理方法に関する６［従来の
技術及び発明が解決すべき課題］半導体製造工程のホト
レジスト処理工程においては、半導体ウェハの洗浄水の
脱水のため、あるいは半導体ウェハ表面上に塗布された
レジスト液の溶剤の除去や、レジストのクロスリンキン
グ増進による耐熱性付与などのレジスト物性の安定化。Detailed Description of the Invention [Industrial Field of Application] The present invention relates to a heat treatment method for semiconductor wafers.6 [Prior Art and Problems to be Solved by the Invention] In the photoresist processing step of the semiconductor manufacturing process, cleaning of the semiconductor wafer is performed. Stabilization of resist physical properties, such as dehydration of water, removal of solvent from resist solution applied on the surface of semiconductor wafers, and imparting heat resistance by increasing resist cross-linking.
露光後のパターンの変形軽減のためなどにベーキングが
行われている。ベーキング方法としては。Baking is performed to reduce pattern deformation after exposure. As for the baking method.
直接加熱ホットプレート、間接加熱ホットプレート、あ
るいはベルト搬送式オーブン、バッチ式オーブン等で加
熱処理が行われているが、コンパクト化、効率化等の点
でホットプレートが多く採用されている。ホットプレー
トを使用してのベーキングは直接加熱方式と、プロキシ
ミテイと呼ばれる間接加熱方式があり、直接加熱方式で
は熱板の上に半導体ウェハを密着載置して半導体ウェハ
の下方から加熱したり、あるいは熱板の下に設けられた
冷却装置により加熱処理で高温になっている半導体ウェ
ハを常温まで冷却する場合、半導体ウェハ全面の温度分
布は均一で効率もよいが、半導体ウェハと熱板が密着し
ているため、表面にごみが付着したり、Ａｋ製等の熱板
においては重金属汚染の問題があった。また、プロキシ
ミティーベークにおいては熱板との間に設けた間隙によ
り汚染はされないが、温度分布の均一化を確保するため
の上記間隙の精密調節が困難であるとか、伝熱速度が遅
いため処理時間が長時間必要である等の問題もあった。Heat treatment is performed using a direct heating hot plate, an indirect heating hot plate, a belt conveyance type oven, a batch type oven, etc., but hot plates are often used due to their compactness and efficiency. There are two types of baking using a hot plate: a direct heating method and an indirect heating method called proximity.In the direct heating method, the semiconductor wafer is placed closely on the hot plate and the semiconductor wafer is heated from below. Alternatively, when a semiconductor wafer that has been heated to a high temperature due to heat treatment is cooled down to room temperature by a cooling device installed under the hot plate, the temperature distribution over the entire surface of the semiconductor wafer is uniform and efficient, but the semiconductor wafer and the hot plate are in close contact with each other. As a result, there was a problem of dust adhering to the surface and heavy metal contamination in heating plates made of Ak or the like. In addition, in proximity baking, contamination does not occur due to the gap provided between the heating plate, but it is difficult to precisely adjust the gap to ensure uniform temperature distribution, and the heat transfer rate is slow. There were also problems such as the need for a long time.
特に、加熱（例えば９０℃）後、室温まで冷却するのに
密着方式では約２０秒かかるにの対し、プロキシミテイ
一方式では６０秒以上も必要であった。In particular, while it takes about 20 seconds for the contact method to cool down to room temperature after heating (for example, 90° C.), the proximity method requires more than 60 seconds.
本発明は上記の欠点を解消するためになされたものであ
って、半導体ウェハの汚染がなく、しかも特に冷却にも
速かな対応が可能で処理時間を短縮することができる熱
処理方法を提供することを目的とする。The present invention has been made in order to eliminate the above-mentioned drawbacks, and an object of the present invention is to provide a heat treatment method that does not cause contamination of semiconductor wafers, and can particularly respond quickly to cooling and shorten processing time. With the goal.
［課題を解決するための手段］
上記の目的を達成するため、本発明の熱処理方法は、加
熱装置と冷却装置とを積層して設けた半導体ウェハの熱
処理装置を前記半導体ウェハの表裏の少くとも一方に間
隙を持たせて配置し、前記加熱装置及び前記冷却装置を
制御して前記半導体ウェハを所望の温度にする。[Means for Solving the Problems] In order to achieve the above object, the heat treatment method of the present invention provides a heat treatment device for semiconductor wafers, which is provided with a stacked heating device and a cooling device, at least on the front and back sides of the semiconductor wafer. The semiconductor wafer is placed with a gap on one side, and the heating device and the cooling device are controlled to bring the semiconductor wafer to a desired temperature.
［作用］
ホットプレートに僅かな間隙を保持して、半導体装置し
て熱処理するプロキシミテイ一方式の熱処理装置におい
て、下方の一方向のみでなく。[Function] A proximity type heat treatment apparatus that heats a semiconductor device by maintaining a small gap between the hot plates, not only in one downward direction.
上下両方向に加熱装置及び冷却装置を積層して成る熱処
理装置を設けることにより、従来のプロキシミティー装
置における欠点であった長時間必要であった処理時間を
短縮することができる。また、冷却装置を加熱装置と積
層して設け、加熱後高温になっている半導体ウェハを常
温まで冷却する場合、所望の目的温度以下で急速に冷却
を行い、目的温度付近になった時、目的温度以下に冷却
されないよう加熱装置を動作させ、半導体ウェハを目的
温度にする。そのため、プロキシミティ装置における半
導体ウェハ裏面が汚染されないという長所を損うことな
く処理時間特に冷却時間を非常に短縮することができ、
歩留りのよい製造工程とすることができる。By providing a heat treatment device in which a heating device and a cooling device are stacked in both vertical directions, it is possible to shorten the long processing time that is a drawback of conventional proximity devices. In addition, when a cooling device is stacked with a heating device to cool a semiconductor wafer that has reached a high temperature after heating to room temperature, the cooling device is rapidly cooled below the desired target temperature, and when the temperature reaches around the target temperature, the The heating device is operated so that the semiconductor wafer is not cooled below the temperature, and the semiconductor wafer is brought to the target temperature. Therefore, the processing time, especially the cooling time, can be significantly shortened without sacrificing the advantage that the back side of the semiconductor wafer in the proximity device is not contaminated.
A manufacturing process with high yield can be achieved.
［実施例］
本発明の熱処理方法を半導体ウェハ製造のレジスト塗布
工程の熱処理製造に適用した一実施例を図面を参照して
説明する。[Example] An example in which the heat treatment method of the present invention is applied to heat treatment manufacturing in a resist coating process of semiconductor wafer manufacturing will be described with reference to the drawings.
第１図の構成図に示すように、熱処理装置Ｓ□は半導体
ウェハＷの加熱装置であるホットプレートｌ及び冷却装
置２からなり、ホットプレート１は円形平板状の絶縁体
で断熱材である基台３上に薄膜抵抗発熱体４及び熱容量
の極めて小さい絶縁体５を順次積層し、一体化されてい
る。薄膜抵抗発熱体４は、ニッケル、クロム、白金、タ
ングステン等の金属単体及び炭素系単体の他、ニクロム
、ステンレスＳＯ３等の合金、ポリマーグラフトカーボ
ン等のポリマー系複合材料、ケイ化モリブデン等の複合
セラミック材料を含め導電性を有し。As shown in the configuration diagram of FIG. 1, the heat treatment apparatus S□ consists of a hot plate 1, which is a heating device for the semiconductor wafer W, and a cooling device 2. A thin film resistance heating element 4 and an insulator 5 having an extremely small heat capacity are sequentially laminated on a base 3 and are integrated. The thin film resistance heating element 4 is made of metals such as nickel, chromium, platinum, and tungsten, and carbon-based elements, as well as alloys such as nichrome and stainless steel SO3, polymer-based composite materials such as polymer-grafted carbon, and composite ceramics such as molybdenum silicide. It has electrical conductivity, including the material.
通電により抵抗発熱体となり得るものならば何れも好適
に使用でき、発熱温度に応じて適切な材質を選択可能で
あって、銅等の電極を取着し、膜厚０．１〜１１００１
Ｌに形成される。これらの薄膜抵抗発熱体４上に設けら
れるＭ！、ｍ体５は電気的絶縁性に優れ、熱伝導性が良
好なアルミナ、ジルコニア、炭化ケイ素等のセラミック
の他、石英、ルチル等の金属酸化物、耐熱性のよいテフ
ロン等のプラスチックス等遠赤外線を放射しやすい材質
のものならば何れも使用可能であって使用電力により好
適な膜厚に形成される。また、薄膜抵抗発熱体４の下方
に設けられる基台３は薄膜抵抗発熱体４の熱が一方的に
下方に拡散することなく効率よく半導体ウェハＷを加熱
することができるように適度の断熱性と導熱性を兼ね備
えたテフロン、ポリイミド等の樹脂や、アルミナ、炭化
ケイ素等のセラミックスあるいはこれらの材料を上面に
コーティングしたアルミニウム、ＳＯ８等の金属材料等
で作られる。Any material that can be used as a resistance heating element when energized can be suitably used, and an appropriate material can be selected depending on the heating temperature.
Formed into L. M! provided on these thin film resistance heating elements 4! , m-body 5 is made of ceramics such as alumina, zirconia, and silicon carbide, which have excellent electrical insulation and good thermal conductivity, as well as metal oxides such as quartz, rutile, and plastics such as Teflon, which has good heat resistance. Any material that easily emits infrared rays can be used, and the film can be formed to a suitable thickness depending on the power used. Furthermore, the base 3 provided below the thin film resistance heating element 4 has appropriate heat insulation properties so that the semiconductor wafer W can be efficiently heated without the heat of the thin film resistance heating element 4 unilaterally diffusing downward. It is made of resins such as Teflon and polyimide that have both heat conductivity and heat conductivity, ceramics such as alumina and silicon carbide, or metal materials such as aluminum and SO8 coated with these materials on the upper surface.
これらのホットプレート１の下方に設けられる冷却装置
２は冷却媒体例えば図示しない圧縮機と蒸発器を使用し
て冷却ガスを作り、冷却ガス用の循環通路６が形成され
、垂直腿動機構７によりホットプレート１が効率よく半
導体ウェハＷを加熱できるようホットプレート１に着脱
自在に上下動可能になっている。A cooling device 2 provided below these hot plates 1 produces cooling gas using a cooling medium, for example, a compressor and an evaporator (not shown), a circulation passage 6 for the cooling gas is formed, and a vertical thigh movement mechanism 7 The hot plate 1 is detachably movable up and down so that the hot plate 1 can efficiently heat the semiconductor wafer W.
また、半導体ウェハＷの温度を制御するため、絶縁体５
には温度センサ８が設けられ、温度センサ８の検知温度
により温度制御装置９が制御信号を発信し、電源装置１
０を制御してｉｌ＃膜抵抗発熱体４及び冷却装置２を操
作するようになっている。In addition, in order to control the temperature of the semiconductor wafer W, the insulator 5
is provided with a temperature sensor 8, and a temperature control device 9 sends a control signal based on the temperature detected by the temperature sensor 8, and the power supply device 1
0 to operate the il# film resistance heating element 4 and the cooling device 2.
以上説明の熱処理装置Ｓ工と同様の熱処理装置Ｓ２が半
導体ウェハＷの上面にも設けられ、熱処理装置Ｓ２は冷
却装置２をホットプレートｌに着脱させる垂直駆動機構
７の他に半導体ウェハＷの搬送時及び熱処理時に好適な
間隙ｄｌを保持できるよう、垂直能動機構７１により上
下動されるようになっている。A heat treatment device S2 similar to the heat treatment device S described above is also provided on the upper surface of the semiconductor wafer W, and the heat treatment device S2 includes a vertical drive mechanism 7 for attaching and detaching the cooling device 2 to and from the hot plate l, as well as a vertical drive mechanism 7 for transporting the semiconductor wafer W. In order to maintain a suitable gap dl during heating and heat treatment, the vertical active mechanism 71 moves it up and down.
また、半導体ウェハＷの下方に設けられる熱処理装置Ｓ
１のホットプレートｌは第２図の断面図に示すように３
ケの箱状の孔１１を有し、この孔１１の各側壁にほぼ内
接し、上面が僅かにホットプレート１表面より突出する
ようにセラミック製等からなる球１２が設けられ、ホッ
トプレート１上に半導体ウェハＷを載置した時、間隙ｄ
２を保持するようになっている。ホットプレートｌには
この他にもセンダ又は前処理装置からの搬入及び後処理
装置又はレシーバへの搬出のための図示しないウオーキ
ングビームあるいは搬入出時にホットプレート１の所定
位置に載置するために半導体ウェハをホットプレート１
から上昇させるための垂直移動可能なピン等が設けられ
る。In addition, a heat treatment device S provided below the semiconductor wafer W
The hot plate l of No. 1 is 3 as shown in the cross-sectional view of Fig. 2.
A ball 12 made of ceramic or the like is provided so as to be substantially inscribed in each side wall of the hole 11 and have an upper surface slightly protruding from the surface of the hot plate 1. When the semiconductor wafer W is placed on the
It is designed to hold 2. In addition to this, the hot plate 1 includes a walking beam (not shown) for carrying in from the sender or pre-processing device and carrying out to the post-processing device or receiver, or a semiconductor to be placed at a predetermined position on the hot plate 1 when carrying in and out. Wafer on hot plate 1
A vertically movable pin or the like is provided for raising the base.
以上のような構成の熱処理装置を採用した本発明の熱処
理方法を説明する。第３図はレジスト塗布装置の処理ラ
インを示しており、センダ１３によりカセット等に収納
された半導体ウェハＷがアドヒージョンユニット１４に
搬送手段により搬送される。アドヒージョンユニット１
４でレジスト膜と半導体ウェハとの密着性向上のため（
ＣＨ，）。The heat treatment method of the present invention employing the heat treatment apparatus configured as described above will be explained. FIG. 3 shows a processing line of the resist coating apparatus, in which a semiconductor wafer W housed in a cassette or the like is transported by a sender 13 to an adhesion unit 14 by a transport means. Adhesion unit 1
In step 4, to improve the adhesion between the resist film and the semiconductor wafer (
CH,).
５ｉＮＨＳｉ（ＣＨ３）ａ等の蒸気を塗布、加熱（１０
０℃）され、次の冷却装置１５において常温に冷却され
る。その後コータ１６に搬送され、レジスト膜を塗布後
、前述の熱処理装置Ｓに搬送される。Apply steam such as 5iNHSi(CH3)a and heat (10
0° C.) and then cooled to room temperature in the next cooling device 15. After that, it is transported to the coater 16, and after applying a resist film, it is transported to the heat treatment apparatus S described above.
熱処理装置Ｓは半導体ウニへＷが搬入される前に冷却装
置２を第１図に示す位置より、垂直開動機構７により下
降させ、ホットプレート１より離脱させた後、予め薄膜
抵抗発熱体４を所望の温度（例えば１００℃）になるよ
う電源装置ｆｔ１ｏより電力を供給し発熱させておく、
その後、ピンをホットプレート１より突出させビームで
搬送された半導体ウェハＷがホットプレート１上に間隙
ｄ２（例えば０．１〜０ 、５ ａｍ）を保持して載置
されると熱処理装置Ｓ１と同様に垂直能動機構７により
冷却装置を離脱され予め加熱（例えば１００℃）された
熱処理装置Ｓ２のホットプレートが垂直移動可能７１に
より半導体ウェハＷとの間隙ｄ工（例えば０．５〜５
ｍｍ）を保持して配置される。In the heat treatment apparatus S, before the W is carried into the semiconductor urchin, the cooling apparatus 2 is lowered by the vertical opening mechanism 7 from the position shown in FIG. Supply power from the power supply device ft1o to generate heat so that the desired temperature (for example, 100°C) is reached.
Thereafter, when the semiconductor wafer W, which has been transported by a beam with the pins protruding from the hot plate 1, is placed on the hot plate 1 with a gap d2 (for example, 0.1 to 0.5 am), the heat treatment apparatus S1 Similarly, the vertically movable hot plate of the heat treatment apparatus S2, which has been removed from the cooling apparatus and preheated (e.g. 100°C) by the vertical active mechanism 7, is vertically movable so as to maintain a gap between the semiconductor wafer W and the semiconductor wafer W (e.g. 0.5~5.
mm).
半導体ウェハＷは、約４０秒間加熱処理されると熱処理
装置Ｓ、及びＳ２の冷却装置２が常温２３℃まで冷却す
るためにそれぞれホットプレート１に装着される。この
時、冷却装置の冷却媒体の通路６に−２０〜−４０℃の
フレオン等を循環させることにより第４図に示すよう現
行の１５〜２０℃の冷却水を循環させた場合の半導体ウ
ェハＷの冷却に要する時間（破線で示す）より実線で示
すようにはるかに短時間で冷却され、Ｔ工秒後に温度セ
ンサ８により常温近傍になった事が検知されると、温度
制御装置９により、自動的に電源装置９を開動して薄膜
抵抗発熱体４をＯＮＬ、て冷却装置２と薄膜抵抗発熱体
４を同時に併用して常温以下の温度への過冷却を防止す
る。このように急速な冷却をされ、処理が終了すると熱
処理装置Ｓ２は垂直開動機構７１により上方に上げられ
、半導体ウェハＷは図示しないピン等でホットプレート
１の上方に支持されてウオーキングビーム等でレシーバ
１７に搬送され、カセット等に収納される。After the semiconductor wafer W is heat-treated for about 40 seconds, the heat treatment device S and the cooling device 2 of S2 are respectively mounted on the hot plate 1 to cool it down to room temperature 23°C. At this time, by circulating Freon or the like at -20 to -40°C in the cooling medium passage 6 of the cooling device, the semiconductor wafer W in the case where the current cooling water at 15 to 20°C is circulated as shown in FIG. The temperature is cooled in a much shorter time as shown by the solid line than the time required for cooling (shown by the broken line), and when the temperature sensor 8 detects that the temperature has reached near normal temperature after T seconds, the temperature control device 9 The power supply device 9 is automatically opened to turn on the thin film resistance heating element 4, thereby simultaneously using the cooling device 2 and the thin film resistance heating element 4 to prevent overcooling to a temperature below room temperature. After rapid cooling in this manner and the processing is completed, the heat treatment apparatus S2 is lifted upward by the vertical opening mechanism 71, and the semiconductor wafer W is supported above the hot plate 1 by pins (not shown) and placed on a receiver by a walking beam or the like. 17 and stored in a cassette or the like.
上記説明は１００℃に加熱後常温に冷却する方法を説明
したが例えば−２０℃から３０℃制御可能な冷却装置と
、３０℃から２５０℃の温度制御範囲を有する加熱装置
を用いれば一２０℃から２５０℃までの温度範囲に亘っ
て制御可能となり広範囲の所望温度が制御できる。The above explanation describes a method for heating to 100°C and then cooling to room temperature. The temperature can be controlled over a temperature range of 250° C. to 250° C., and a wide range of desired temperatures can be controlled.
尚、本発明における冷却装置として一般に産業機械に広
く使用されている冷凍サイクル（例えばコンプレッサ、
蒸発器、凝縮器から成る）を採用してもよい、この場合
高い信頼性と安全性とを確保することが可能となる。Note that the cooling device in the present invention is a refrigeration cycle that is generally widely used in industrial machinery (for example, a compressor,
In this case, it is possible to ensure high reliability and safety.
以上の説明は本発明の熱処理方法の一実施例であって、
本発明はこれに限定されるものではない。The above explanation is an example of the heat treatment method of the present invention,
The present invention is not limited to this.
即ち、加熱装置と冷却装置を同時に併用可能であって各
々随時動作することができるものであって、上方及び下
方の装置の冷却及び加熱装置を各々組合わせて使用する
ことができる。また、設置される熱処理装置は上下２方
向とは限定されず、多数使用することもできるし、又、
加熱装置と冷却装置もこれに限定するものでなく、公知
のものも使用可能である。That is, the heating device and the cooling device can be used together and can be operated at any time, and the cooling and heating devices of the upper and lower devices can be used in combination. In addition, the heat treatment equipment installed is not limited to two directions, up and down, but can be installed in multiple directions, and
The heating device and the cooling device are not limited to these, and known devices can also be used.
［発明の効果］
以上の説明からも明らかなように１本発明の熱処理方法
によれば、半導体ウェハの裏面の汚染及び重金属汚染が
なく、クリーンな処理が行え、しかも上下両方向にそれ
ぞれ冷却装置を加熱装置に着脱自在に設けるため加熱時
も効率よく加熱でき。[Effects of the Invention] As is clear from the above description, according to the heat treatment method of the present invention, there is no contamination or heavy metal contamination on the back side of the semiconductor wafer, clean processing can be performed, and cooling devices are installed in both the upper and lower directions. Since it is removably attached to the heating device, it can be heated efficiently even when heating.
冷却時も急冷して加熱装置を併用して目的温度にするた
め処理時間を非常に短縮することができる。During cooling, it is rapidly cooled and a heating device is used in combination to reach the target temperature, making it possible to significantly shorten processing time.
第１図は本発明の熱処理方法を適用した一実施例の熱処
理装置の構成図、第２図は第１図に示す一実施例の要部
を示す断面図、第３図は第１図に示す一実施例を用いた
熱処理工程を示す図、第４図は一実施例を説明する図で
ある。
Ｓｌ、Ｓ２・・・・・・熱処理装置
Ｗ・・・・・・・・・・・・半導体ウニハト・・・・・
・・・・・・ホットプレート（熱処理装置）２・・・・
・・・・・・・・冷却装置
ｄ工、ｄ２・・・・・・間隙FIG. 1 is a configuration diagram of a heat treatment apparatus according to an embodiment to which the heat treatment method of the present invention is applied, FIG. 2 is a cross-sectional view showing a main part of the embodiment shown in FIG. 1, and FIG. FIG. 4 is a diagram illustrating the heat treatment process using the example shown in FIG. Sl, S2... Heat treatment equipment W... Semiconductor sea urchin hat...
...Hot plate (heat treatment equipment) 2...
......Cooling device d work, d2...Gap
Claims (1)
熱処理装置を前記半導体ウェハの表裏の少くとも一方に
間隙を持たせて配置し、前記加熱装置及び前記冷却装置
を制御して前記半導体ウェハを所望の温度にすることを
特徴とする熱処理方法。A semiconductor wafer heat treatment device including a heating device and a cooling device stacked is disposed on at least one of the front and back sides of the semiconductor wafer with a gap therebetween, and the heating device and the cooling device are controlled to treat the semiconductor wafer. A heat treatment method characterized by bringing the temperature to a desired temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20553089A JP2901653B2 (en) | 1989-08-08 | 1989-08-08 | Heat treatment method and heat treatment apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20553089A JP2901653B2 (en) | 1989-08-08 | 1989-08-08 | Heat treatment method and heat treatment apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0369111A true JPH0369111A (en) | 1991-03-25 |
| JP2901653B2 JP2901653B2 (en) | 1999-06-07 |
Family
ID=16508414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20553089A Expired - Fee Related JP2901653B2 (en) | 1989-08-08 | 1989-08-08 | Heat treatment method and heat treatment apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2901653B2 (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07169824A (en) * | 1993-12-13 | 1995-07-04 | Anelva Corp | Substrate heating and cooling mechanism |
| JPH07273175A (en) * | 1994-03-31 | 1995-10-20 | Ngk Insulators Ltd | Holding member |
| US5859408A (en) * | 1994-06-28 | 1999-01-12 | Btg International Limited | Apparatus for uniformly heating a substrate |
| US5911896A (en) * | 1997-06-25 | 1999-06-15 | Brooks Automation, Inc. | Substrate heating apparatus with glass-ceramic panels and thin film ribbon heater element |
| US6097005A (en) * | 1998-08-20 | 2000-08-01 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
| JP2000331910A (en) * | 1999-05-20 | 2000-11-30 | Ushio Inc | Resist hardening device |
| JP2001160528A (en) * | 1999-12-02 | 2001-06-12 | Fenwall Controls Of Japan Ltd | Temperature control method |
| US6450803B2 (en) | 1998-01-12 | 2002-09-17 | Tokyo Electron Limited | Heat treatment apparatus |
| JP2007067111A (en) * | 2005-08-30 | 2007-03-15 | Tokyo Electron Ltd | Heater, coater, developer, and heating method |
| KR100745062B1 (en) * | 2001-06-30 | 2007-08-01 | 주식회사 하이닉스반도체 | Apparatus for manufacturing semiconductor |
| JP2008003409A (en) * | 2006-06-23 | 2008-01-10 | Canon Inc | Optical equipment |
| JP2008153290A (en) * | 2006-12-14 | 2008-07-03 | Ibiden Co Ltd | Hot plate unit |
| CN110571172A (en) * | 2019-09-06 | 2019-12-13 | 大同新成新材料股份有限公司 | Silicon wafer manufacturing method and manufacturing device |
-
1989
- 1989-08-08 JP JP20553089A patent/JP2901653B2/en not_active Expired - Fee Related
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07169824A (en) * | 1993-12-13 | 1995-07-04 | Anelva Corp | Substrate heating and cooling mechanism |
| JPH07273175A (en) * | 1994-03-31 | 1995-10-20 | Ngk Insulators Ltd | Holding member |
| US5859408A (en) * | 1994-06-28 | 1999-01-12 | Btg International Limited | Apparatus for uniformly heating a substrate |
| US5911896A (en) * | 1997-06-25 | 1999-06-15 | Brooks Automation, Inc. | Substrate heating apparatus with glass-ceramic panels and thin film ribbon heater element |
| US6450803B2 (en) | 1998-01-12 | 2002-09-17 | Tokyo Electron Limited | Heat treatment apparatus |
| US6097005A (en) * | 1998-08-20 | 2000-08-01 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
| US6605814B1 (en) * | 1999-05-20 | 2003-08-12 | Ushiodenki Kabushiki Kaisha | Apparatus for curing resist |
| JP2000331910A (en) * | 1999-05-20 | 2000-11-30 | Ushio Inc | Resist hardening device |
| JP2001160528A (en) * | 1999-12-02 | 2001-06-12 | Fenwall Controls Of Japan Ltd | Temperature control method |
| JP4656348B2 (en) * | 1999-12-02 | 2011-03-23 | 日本フェンオール株式会社 | Temperature control method and temperature control apparatus |
| KR100745062B1 (en) * | 2001-06-30 | 2007-08-01 | 주식회사 하이닉스반도체 | Apparatus for manufacturing semiconductor |
| JP2007067111A (en) * | 2005-08-30 | 2007-03-15 | Tokyo Electron Ltd | Heater, coater, developer, and heating method |
| JP4519036B2 (en) * | 2005-08-30 | 2010-08-04 | 東京エレクトロン株式会社 | Heating device, coating, developing device and heating method |
| JP2008003409A (en) * | 2006-06-23 | 2008-01-10 | Canon Inc | Optical equipment |
| JP2008153290A (en) * | 2006-12-14 | 2008-07-03 | Ibiden Co Ltd | Hot plate unit |
| CN110571172A (en) * | 2019-09-06 | 2019-12-13 | 大同新成新材料股份有限公司 | Silicon wafer manufacturing method and manufacturing device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2901653B2 (en) | 1999-06-07 |
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