JPH036846A - Resin-sealed semiconductor device - Google Patents
Resin-sealed semiconductor deviceInfo
- Publication number
- JPH036846A JPH036846A JP14181989A JP14181989A JPH036846A JP H036846 A JPH036846 A JP H036846A JP 14181989 A JP14181989 A JP 14181989A JP 14181989 A JP14181989 A JP 14181989A JP H036846 A JPH036846 A JP H036846A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- resin part
- heat sink
- semiconductor device
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 229920005989 resin Polymers 0.000 claims abstract description 30
- 239000011347 resin Substances 0.000 claims abstract description 30
- 230000017525 heat dissipation Effects 0.000 claims description 6
- 230000035515 penetration Effects 0.000 abstract 1
- 230000002265 prevention Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、パワートランジスタやサイリスタなどのよ
うな樹脂封止形半導体装置（以下、半導体装置という）
に係り、詳しくは、その半導体チップを搭載した放熱板
と、半導体チップを外装封止した樹脂部との連結構造に
関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention is applicable to resin-encapsulated semiconductor devices (hereinafter referred to as semiconductor devices) such as power transistors and thyristors.
In particular, the present invention relates to a connection structure between a heat sink on which the semiconductor chip is mounted and a resin part in which the semiconductor chip is externally sealed.
従来から、この種の半導体装置においては、パワートラ
ンジスタにおけるＴＱ２２０形といわれるような構造、
すなわち、第３図の一部破断側面図及び第４図の裏面側
から見た外観斜視図で示すように、半導体チップ１を金
属からなる放熱板２の一面に圧着や半田付けで搭載した
うえ、この半導体チシブｌをエポキシ樹脂からなる樹脂
部３によって外装封止してなる構造が一般的に採用され
ている。そして、この半導体装置では、その放熱板２上
の所定位置に樹脂部３の一部が充填される溝部４をあら
かじめ打刻（プレス）加工などによって形成しておき、
この溝部４に充填された樹脂部３の一部を介して放熱板
２と樹脂部３とを連結することにより、これらの両者を
互いに密着した状態で接合するようになっている。なお
、この溝部４の断面形状はコ字状もしくはＶ字状とされ
ており、この溝部４の内面に沿って放熱板２と樹脂部３
との接合距離が延長されることになる結果、両者の接合
界面を通じて外部から侵入した湿気が半導体チップｌに
まで到達し難くなり、半導体装置における耐ンＷ性をあ
る程度確保できるという利点がある。Conventionally, in this type of semiconductor device, a structure such as the TQ220 type power transistor,
That is, as shown in the partially cutaway side view in FIG. 3 and the external perspective view seen from the back side in FIG. A structure in which this semiconductor chip 1 is externally sealed with a resin part 3 made of epoxy resin is generally adopted. In this semiconductor device, a groove portion 4 filled with a portion of the resin portion 3 is formed in advance at a predetermined position on the heat dissipation plate 2 by stamping (pressing) or the like.
By connecting the heat dissipation plate 2 and the resin part 3 through a part of the resin part 3 filled in the groove part 4, the two are joined in a state in which they are in close contact with each other. The cross-sectional shape of the groove 4 is U-shaped or V-shaped, and the heat sink 2 and the resin part 3 are disposed along the inner surface of the groove 4.
As a result of extending the bonding distance between the two, it becomes difficult for moisture that has entered from the outside to reach the semiconductor chip l through the bonding interface between the two, and there is an advantage that the semiconductor device can have a certain degree of moisture resistance.
ところで、このようにして構成された半導体装置におい
ては、通電時の半導体チップ１で発生する熱が放熱板２
を通じて外部に放散されるので、半導体チップｌに対し
て高電流を流すことができるという特長がある。By the way, in the semiconductor device configured in this way, the heat generated in the semiconductor chip 1 when energized is transferred to the heat sink 2.
It has the advantage that a high current can be passed through the semiconductor chip l because it is dissipated to the outside through the semiconductor chip l.
しかしながら、前記従来構造の半導体装置を構成する放
熱板２に形成された溝部４によっては、放熱板２と樹脂
部３との接合界面から侵入した温気が半導体チップ１に
まで到達する時間をある程廣遅らせることは可能であっ
ても、その到達を長時間にわたって防止することは大変
に難しく、半導体装置の耐１！性をより向上させるのは
困難となっていた。However, depending on the groove portion 4 formed in the heat sink 2 constituting the semiconductor device with the conventional structure, there is a time period for the hot air that has entered from the bonding interface between the heat sink 2 and the resin portion 3 to reach the semiconductor chip 1. Although it is possible to delay its arrival, it is very difficult to prevent its arrival for a long time, and the durability of semiconductor devices is 1! It has become difficult to improve one's sexuality.
また、この半導体装置を半田付けもしくは遠赤外リフロ
ーやペーパーフェイズといわれるような実装方式によっ
てプリント配線基板（図示していない）に取りつけた際
には、放熱板２及び樹脂部３それぞれの有する熱膨張率
の相違に基づいて放熱板２と樹脂部３とを互いに引き剥
がす方向の熱ストレスが作用することになり、両者の密
着状態が劣化してしまう結果、放熱板２の溝部４から樹
脂部３の一部が抜は出てしまい、放熱板２と樹脂部３と
の接合界面が開いてしまう、そこで、放熱板２と樹脂部
３との間に形成された隙間を通じて外部の湿気がより容
易に半導体装置の内部にまで侵入しうろことになり、半
導体装置における耐湿性のより大きな低下を招いてしま
うことになっていた。Furthermore, when this semiconductor device is attached to a printed wiring board (not shown) by soldering, far-infrared reflow, or a mounting method called paper phase, the heat generated by each of the heat sink 2 and the resin part 3 is Due to the difference in expansion coefficients, thermal stress acts in a direction that causes the heat sink 2 and the resin part 3 to be peeled off from each other, and as a result, the adhesion between the two deteriorates. 3 will come out, and the bonding interface between the heat sink 2 and the resin part 3 will open. Therefore, outside moisture will be absorbed through the gap formed between the heat sink 2 and the resin part 3. This would easily penetrate into the interior of the semiconductor device, resulting in a further decline in the moisture resistance of the semiconductor device.
この発明は、このような不都合に鑑みて創案されたもの
であって、半導体チップを搭載した放熱板と、半導体チ
ップを外装封止した樹脂部との連結構造を改良すること
により、耐湿性の低下を有効に防止し、かつ、その大幅
な向上を図ることができる半導体装置を提供することを
目的としている。This invention was devised in view of these inconveniences, and improves moisture resistance by improving the connection structure between the heat sink on which the semiconductor chip is mounted and the resin part in which the semiconductor chip is externally encapsulated. It is an object of the present invention to provide a semiconductor device that can effectively prevent the deterioration and significantly improve the deterioration.
この発明は、半導体チップを搭載した放熱板と、前記半
導体チップを外装封止した樹脂部とを備え、かつ、前記
放熱板上の所定位置には前記樹脂部の一部が充填される
溝部を形成してなる半導体装置において、前記溝部の断
面形状を、その底面幅よりも上面幅の方が狭くなる形状
として形成したことを特徴とするものである。The present invention comprises a heat sink on which a semiconductor chip is mounted, and a resin part in which the semiconductor chip is externally sealed, and a groove part filled with a part of the resin part is provided at a predetermined position on the heat sink. The semiconductor device thus formed is characterized in that the cross-sectional shape of the groove portion is formed such that the width of the top surface thereof is narrower than the width of the bottom surface thereof.
上記構成によれば、その底面幅よりも上面幅の方が狭く
なる＃ｆｒ面形状の溝部を放熱板に形成しているので、
その内面に沿う放熱板と樹脂部との接合距離が従来例よ
りも長（なり、この溝部の湿気侵入に対する防止機能が
増すことになる。また、このような断面形状とされた溝
部に充填された樹脂部の一部が溝部によって抜は出し不
可な状態で支持されることになる結果、この半導体装置
を実装する際に、放熱板と樹脂部とを互いに引き剥がす
方向の熱ストレスが作用しても、両者の密着状態が劣化
して接合界面が開いてしまうことがなくなる。According to the above configuration, since the #fr surface-shaped groove is formed in the heat sink, the width of the top surface is narrower than the width of the bottom surface,
The bonding distance between the heat sink and the resin part along the inner surface is longer than in the conventional example, which increases the function of preventing moisture from entering the groove. As a result, when this semiconductor device is mounted, thermal stress acts in a direction that causes the heat dissipation plate and the resin part to be peeled off from each other. Even if the bonding interface is opened, the adhesion between the two will not deteriorate and the bonding interface will not open.
以下、この発明の実施例を図面に基づいて説明する。 Embodiments of the present invention will be described below based on the drawings.
第１図は本発明に係る半導体装置の構成を示す一部破断
側面図、第２図はその要部を拡大して示す断面図である
。なお、この半導体装置の全体構成は、その放熱板に形
成した溝部の断面形状を除き、前述した従来例と基本的
に異ならないので、互いに同一もしくは相当する部品、
部分には同一符号を付し、ここでの詳しい説明は省略す
る。FIG. 1 is a partially cutaway side view showing the structure of a semiconductor device according to the present invention, and FIG. 2 is a sectional view showing an enlarged main part thereof. Note that the overall configuration of this semiconductor device is basically the same as the conventional example described above, except for the cross-sectional shape of the groove formed in the heat sink, so parts that are the same or equivalent to each other,
The same reference numerals are given to the parts, and detailed explanation thereof will be omitted here.
本実施例にかかる半導体装置は、半導体チップ１を搭載
した放熱板２と、半導体チップｌを外装封止したエポキ
シ樹脂からなる樹脂部３とを備えており、半導体チップ
１及び放熱板２から延出されたリード端子５は互いに内
部リード線６を介して接続されている。そして、この放
ｐ′Ｆｉｚ上の所定位置には樹脂部３の一部が充填され
る溝部４が形成されており、この溝部４の断面形状は、
その底面幅よりも上面幅の方が狭くなる形状、例えば、
「ありみぞ」といわれるような略台形状として形成され
ている。なお、このような断面形状を存する溝部４を形
成するには、第２図で示すように、まず、第１回目の打
刻加工によって深さ方向に沿う幅寸法が同一とされた従
来例と同様のコ字状の溝部（図では、符号４ａで示す）
を形成したうえ、この溝部４ａの上面側外縁をさらに第
２回目の打刻加工によって互いに対向する内側に向かっ
て膨出させればよい、また、このような打刻加工によれ
ば、溝部４の上面側部分が加工硬化して機械的強度が増
すという利点もある。The semiconductor device according to this embodiment includes a heat sink 2 on which a semiconductor chip 1 is mounted, and a resin part 3 made of epoxy resin that externally encapsulates the semiconductor chip 1, and extends from the semiconductor chip 1 and the heat sink 2. The lead terminals 5 are connected to each other via internal lead wires 6. A groove 4 filled with a part of the resin part 3 is formed at a predetermined position on this radiation p'Fiz, and the cross-sectional shape of this groove 4 is as follows.
A shape where the top width is narrower than the bottom width, for example,
It is formed into a roughly trapezoidal shape that is called an ``arimizo''. Note that in order to form the groove 4 having such a cross-sectional shape, as shown in FIG. Similar U-shaped groove (indicated by reference numeral 4a in the figure)
In addition to forming the groove 4a, the upper outer edge of the groove 4a may be further bulged toward the inner side facing each other by a second stamping process. Another advantage is that the upper surface side portion of the material is work hardened, increasing its mechanical strength.
そして、このような形状とされた溝部４においては、そ
の内側面が底面側から上面側に向かって狭まるように傾
斜していることから、その内面に沿う放熱板２と樹脂部
３との接合距離が長くなるとともに、この溝部４に充填
された樹脂部３の一部が溝部４によって抜は出し不可な
状態で強固に支持されることになる。In the groove portion 4 having such a shape, the inner surface thereof is inclined so as to narrow from the bottom surface side to the upper surface side, so that the bonding between the heat dissipation plate 2 and the resin portion 3 along the inner surface is prevented. As the distance becomes longer, a part of the resin part 3 filled in the groove part 4 is firmly supported by the groove part 4 in a state where it cannot be removed.
以上説明したように、この発明に係る半導体装置によれ
ば、半導体チップを搭載した放熱板上の所定位置に、そ
の底面幅よりも上面幅の方が狭くなる断面形状の溝部を
形成し、かつ、半導体チップを外装封止した樹脂部の一
部を溝部に充填しているので、この溝部の内周面に沿う
放熱板と樹脂部との接合距離が従来例よりも長くなり、
この溝部の温気侵入に対する防止機能が増すことになる
。As explained above, according to the semiconductor device of the present invention, a groove portion having a cross-sectional shape whose top width is narrower than its bottom width is formed at a predetermined position on a heat sink on which a semiconductor chip is mounted, and Since the groove is filled with a part of the resin part that externally encapsulates the semiconductor chip, the bonding distance between the heat sink and the resin part along the inner peripheral surface of the groove is longer than in the conventional example.
This increases the function of preventing hot air from entering the groove.
また、この溝部に充填された樹脂部の一部が溝部によっ
て抜は出し不可な状態で支持されるので、この半導体装
置の実装時に、放熱板と樹脂部とを引き剥がす方向の熱
ストレスが作用しても、これら両者の密着状態が劣化し
て接合界面が開いてしまうことがなくなる。その結果、
半導体装置における耐湿性の低下を有効に防止し、かつ
、その大幅な向上を図ることができるという優れた効果
が得られる。In addition, a part of the resin part filled in this groove is supported by the groove in a state that cannot be removed, so when this semiconductor device is mounted, thermal stress is applied in the direction of peeling off the heat sink and the resin part. Even if the bonding interface is opened, the adhesion between the two will not deteriorate and the bonding interface will not open. the result,
The excellent effect of effectively preventing a decrease in moisture resistance in a semiconductor device and significantly improving it can be obtained.
第１図及び第２図は本発明に係り、第１図は本発明に係
る半導体装置の構成を示す一部破断側面図であり、第２
図はその要部を拡大して示す断面図である。また、第３
図及び第４図は従来例に係り、第３図は半導体装置の構
成を示す一部破断側面図であり、第４図はこれを裏面側
から見た外観斜視図である。
図における符号１は半導体チップ、２は放熱板、３は樹
脂部、４は溝部である。
なお、図中の同一符号は、互いに同一もしくは相当する
部品、部分を示している。
第１図1 and 2 relate to the present invention; FIG. 1 is a partially cutaway side view showing the configuration of a semiconductor device according to the present invention;
The figure is an enlarged sectional view of the main part. Also, the third
4 and 4 relate to a conventional example, FIG. 3 is a partially cutaway side view showing the configuration of a semiconductor device, and FIG. 4 is an external perspective view of the semiconductor device as seen from the back side. In the figure, reference numeral 1 is a semiconductor chip, 2 is a heat sink, 3 is a resin part, and 4 is a groove part. Note that the same reference numerals in the drawings indicate parts and portions that are the same or correspond to each other. Figure 1
Claims (1)
ップを外装封止した樹脂部とを備え、かつ、前記放熱板
上の所定位置には前記樹脂部の一部が充填される溝部を
形成してなる樹脂封止形半導体装置において、 前記溝部の断面形状をその底面幅よりも上面幅の方が狭
くなる形状として形成したことを特徴とする樹脂封止形
半導体装置。(1) A heat dissipation plate mounted with a semiconductor chip and a resin part externally encapsulating the semiconductor chip, and a groove part filled with a part of the resin part is formed at a predetermined position on the heat dissipation plate. A resin-sealed semiconductor device comprising: a cross-sectional shape of the groove portion having a top width narrower than a bottom width thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14181989A JPH036846A (en) | 1989-06-02 | 1989-06-02 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14181989A JPH036846A (en) | 1989-06-02 | 1989-06-02 | Resin-sealed semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH036846A true JPH036846A (en) | 1991-01-14 |
Family
ID=15300865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14181989A Pending JPH036846A (en) | 1989-06-02 | 1989-06-02 | Resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH036846A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020085231A1 (en) * | 2018-10-26 | 2020-04-30 | 三菱日立パワーシステムズ株式会社 | Dust removal device |
-
1989
- 1989-06-02 JP JP14181989A patent/JPH036846A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020085231A1 (en) * | 2018-10-26 | 2020-04-30 | 三菱日立パワーシステムズ株式会社 | Dust removal device |
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