JPH0364043A - Solar cell - Google Patents
Solar cellInfo
- Publication number
- JPH0364043A JPH0364043A JP1200751A JP20075189A JPH0364043A JP H0364043 A JPH0364043 A JP H0364043A JP 1200751 A JP1200751 A JP 1200751A JP 20075189 A JP20075189 A JP 20075189A JP H0364043 A JPH0364043 A JP H0364043A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- laser beam
- metallic electrode
- amorphous silicon
- silicon layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 abstract description 3
- 238000000059 patterning Methods 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000009835 boiling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 235000014121 butter Nutrition 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はアモルファスシリコンを用いた複数の光起電力
素子を集積してなる太陽電池に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a solar cell formed by integrating a plurality of photovoltaic elements using amorphous silicon.
（従来の技術）
一般に太陽電池は、ガラス等の透光性絶縁基板上に透明
導電膜、光活性層であるアモルファスシリコン層、金属
電極をこの順序に積層して構成されている０通常太陽電
池の場合は２個以上の光起電力素子を直列接続した状態
の集積型構造とするため、各光起電力素子を構成する過
程ではアモルファスシリコン層、金属電極等について夫
々バターニングすることが必要になる。(Prior Art) Generally, a solar cell is constructed by laminating a transparent conductive film, an amorphous silicon layer as a photoactive layer, and a metal electrode in this order on a transparent insulating substrate such as glass. In this case, since the integrated structure has two or more photovoltaic elements connected in series, it is necessary to butter the amorphous silicon layer, metal electrode, etc. in the process of configuring each photovoltaic element. Become.
このパターニングには従来マスクを用いたウェットエツ
チングが一般的であったが、近年にあっては工程の省略
化のためレーザビームを用いたスクライブ加工が行われ
るようになっている。Conventionally, wet etching using a mask has been commonly used for this patterning, but in recent years, scribing using a laser beam has been used to simplify the process.
ところでスクライブ加工にレーザビームを用いる場合は
レーザビーム自体のパワー分布が可及的に均一となるよ
う第６図に示す如き分布のレーザビームが用いられる。By the way, when a laser beam is used for scribing, a laser beam having a distribution as shown in FIG. 6 is used so that the power distribution of the laser beam itself is as uniform as possible.
第６図は横軸に径方向の位置を、また縦軸にパワーをと
って示している。FIG. 6 shows the radial position on the horizontal axis and the power on the vertical axis.
ところでこのようなパワー分布のレーザビームを用いて
レーザスクライブを行うとパワーが強すぎるときは第７
図（イ）の如く、またパワーか弱過ぎるときは第７図（
口〉に示す如くになる。By the way, when laser scribing is performed using a laser beam with such a power distribution, if the power is too strong, the seventh
As shown in Figure (A), if the power is too weak, see Figure 7 (
The result will be as shown in the image below.
第７図（イ）、（ロ）はレーザビームによるスクライブ
溝の形状を示す斜視図であり、パワーが強すぎると溝幅
の中央部ではスクライブ溝は金属電極４．アモルファス
シリコンＮ３を経て透明導電膜２の表面に達する深さに
、また溝幅の両側部ではアモルファスシリコン層３の表
面に蒸発残りの極く薄い金属電極４の飛沫、或いは蒸発
残の薄膜が存在し、これが透明導電膜２の面と接触し、
短絡状態が発生してしまう。FIGS. 7(a) and 7(b) are perspective views showing the shape of scribed grooves created by the laser beam, and when the power is too strong, the scribed grooves are formed by the metal electrode 4 in the center of the groove width. At the depth reaching the surface of the transparent conductive film 2 through the amorphous silicon N3, and on both sides of the groove width, very thin droplets of the metal electrode 4 remaining after evaporation or a thin film remaining after evaporation are present on the surface of the amorphous silicon layer 3. This contacts the surface of the transparent conductive film 2,
A short circuit condition will occur.
また逆にパワーか弱過ぎると第７図（ロ）に示す如くア
モルファスシリコン層３が切断不良の状態となる外、そ
の表面に金属電柵４の飛沫、蒸発残りの薄膜が存在し、
両金属電極４，４が接触して切断不良の状態となるとい
う問題があった。On the other hand, if the power is too weak, not only will the amorphous silicon layer 3 be poorly cut as shown in FIG.
There was a problem in that the two metal electrodes 4 came into contact with each other, resulting in poor cutting.
この対策として加工幅の異なるレーザビーム投射法が提
案されているが、この方法はレーザビームを２回走査す
る必要があり、工数が増大するという難点があった。As a countermeasure to this problem, a laser beam projection method with different processing widths has been proposed, but this method requires scanning the laser beam twice, which has the disadvantage of increasing the number of steps.
本発明はかかる事情に鑑みなされたものであって、その
目的とするところは、金属電極等を過不足なく正確に切
断し得て、高い歩留りが得られるようにした太陽電池を
提供するにある。The present invention has been made in view of the above circumstances, and its purpose is to provide a solar cell in which metal electrodes, etc. can be accurately cut without too much or too little, and a high yield can be obtained. .
本発明に係る太陽電池は、絶縁性基板上に透明導電膜、
アモルファスシリコン層、金属電極を順次積層形成し、
前記金属電極表面側から高エネルギビームを１回走査し
てスクライブ溝を形成して構成した複数の光起電力素子
を集積してなる太陽電池において、前記スクライブ溝は
溝幅方向の中央部で深く、その両側部で浅くして溝の中
央部と両側部との間に夫々段差を形成してあることを特
徴とする。The solar cell according to the present invention includes a transparent conductive film on an insulating substrate,
Amorphous silicon layer and metal electrode are sequentially laminated,
In a solar cell formed by integrating a plurality of photovoltaic elements configured by scanning a high-energy beam once from the surface side of the metal electrode to form a scribe groove, the scribe groove is deep at the center in the groove width direction. , the groove is shallower on both sides to form a step between the central part and both sides of the groove.
（作用）
本発明はこれによってスクライブ溝の中央部とその両側
部との間に形成される段差のエツジ部が金属電極膜の繋
がりを遮断する。(Function) According to the present invention, the edge portion of the step formed between the central portion of the scribe groove and its both sides interrupts the connection of the metal electrode film.
以下本発明をその実施例を示す図面に基づき具体的に説
明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below based on drawings showing embodiments thereof.
第１図は本発明に係る太陽電池の斜視図であり、図中１
はガラス等にて構成される透光性の絶縁基板を示してい
る。この絶縁基板ｌ上にＩＴＯ又はＺｎＯ１等からなる
透明導電膜２、アモルファスシリコン層（シリコンの沸
点は２３３０°Ｃ）３、Ａｆ製金属電極（Ａｆの沸点２
０６０°Ｃ） ４をこの順序に積層しである。FIG. 1 is a perspective view of a solar cell according to the present invention.
indicates a translucent insulating substrate made of glass or the like. On this insulating substrate l, a transparent conductive film 2 made of ITO or ZnO1, an amorphous silicon layer (the boiling point of silicon is 2330°C) 3, a metal electrode made of Af (the boiling point of Af 2
060°C) were laminated in this order.
そして金属電極４．アモルファスシリコン層３をレーザ
ビームＬＢを用いた、所謂レーザスクライブ法によりバ
ターニングし、相互に直列接続された複数の光起電力素
子を形成しである。レーザビーム用光源としては、例え
ばＹＡＧ レーザを用い、これを集光光学系にて第２図
に示す如きパワー分布となるよう第３図（イ）、（ロ）
に示す如くデフォーカスする。即ち第３図（イ）は焦点
位置Ｆが遠い場合を、また第３図（ロ）は焦点位ｆｉＦ
が近い場合を夫々示しており、これによってパワーは中
央部とその周縁部とに段差が形成された状態となる。and metal electrode 4. The amorphous silicon layer 3 is patterned by a so-called laser scribing method using a laser beam LB to form a plurality of photovoltaic elements connected in series. As the light source for the laser beam, for example, a YAG laser is used, and the power distribution is as shown in FIG.
Defocus as shown. That is, Fig. 3(a) shows the case where the focal point F is far, and Fig. 3(b) shows the case where the focal position F is far.
The graphs show cases in which the power is close to each other, and as a result, the power is in a state where a level difference is formed between the center portion and the peripheral portion thereof.
この結果、第１図に示す如くレーザスクライブＬＢによ
って形成される溝５はパワーの大きいレーザビームＬＢ
の中央部の通過域では加工深度が太きく金属電極４と共
にその下のアモルファスシリコン層３をスクライブした
状態となる。一方パワーの小さいレーザビームＬＢの周
縁部の通過域では加工深度は浅く、極く小量の金属電極
４の飛散物蒸発残りが存在するが、加工深度の大きい中
心部分では金属電極４は残りなく切断された状態にあり
、全体としては切断不良の状態は生じない。As a result, as shown in FIG. 1, the groove 5 formed by laser scribe LB is
In the central passage area, the machining depth is large and the metal electrode 4 and the amorphous silicon layer 3 underneath are scribed. On the other hand, in the peripheral passage area of the laser beam LB with low power, the processing depth is shallow and there is a very small amount of evaporated debris of the metal electrode 4, but in the central part where the processing depth is large, no metal electrode 4 remains. It is in a disconnected state, and no defective disconnection occurs as a whole.
しかも金属電極４とアモルファスシリコン層３との間に
は段差が形成されるから、金属電極４が透明導電膜２と
直接接触することはない。Moreover, since a step is formed between the metal electrode 4 and the amorphous silicon layer 3, the metal electrode 4 does not come into direct contact with the transparent conductive film 2.
第４図は本発明の他の実施例を示す断面構造図であり、
この実施例にあってはスクライブ溝６の断面形状は丁字
形となっている。即ちスクライブ溝６の幅方向の中央部
では金属電極４及びその下層のアモルファスシリコン層
３が残存することなく切断されて溝底には透明導電膜２
が露出せしめられている。一方スクライブ溝６の幅方向
の両側部では金属電極４の殆どが切断されているが、ア
モルファスシリコン層３の表面に沿って極く僅かに金属
電極４の飛沫、或いは蒸発残りが存在しているに留まり
、溝の中央部と両側部との間に形成される段差、特にそ
のエツジ部が金属電極４と透明導電膜２との接触を防止
した状態となっている。FIG. 4 is a cross-sectional structural diagram showing another embodiment of the present invention,
In this embodiment, the cross-sectional shape of the scribe groove 6 is T-shaped. That is, the metal electrode 4 and the underlying amorphous silicon layer 3 are cut without remaining at the center in the width direction of the scribe groove 6, and the transparent conductive film 2 is left at the bottom of the groove.
is exposed. On the other hand, on both sides of the scribe groove 6 in the width direction, most of the metal electrode 4 is cut off, but there are very few droplets or evaporated remains of the metal electrode 4 along the surface of the amorphous silicon layer 3. The level difference formed between the central part and both sides of the groove, especially the edge part, is in a state where contact between the metal electrode 4 and the transparent conductive film 2 is prevented.
第５図は第４図のレーザスクライブ加工に用いた結像光
学系を示す説明図であり、集光レンズ１１の手前にスク
ライブ溝幅に相応する幅を備えたスリットを有する板１
２と更にこの板１２のスリット１２ａ幅よりも若干狭い
幅のスリット１３ａを有するハーフミラ１３を夫々スリ
ット１２ａ、１３ａの中心位置を一致させた状態で配設
しである。これによって入射されてきたレーザビームＬ
Ｂの中央部はスリット１２ａ。FIG. 5 is an explanatory diagram showing the imaging optical system used for the laser scribing process shown in FIG.
2 and a half mirror 13 having a slit 13a having a width slightly narrower than the width of the slit 12a of this plate 12, respectively, are arranged with the center positions of the slits 12a and 13a being aligned with each other. The laser beam L that has been incident as a result of this
The center part of B is a slit 12a.
１３ａを経て直接的に、またレーザビームＬＢの周縁部
の光はハーフ壽う１３にて一部を反射された状態で間接
的に夫々レンズ１１に入射し、被加工物表面に結像せし
められるが、そのパワー分布は中央部とその両側との間
には段差が形成された状態となり、第４図に示す如き断
面のスクライブ溝が形成されることとなる。The light from the peripheral part of the laser beam LB enters the lens 11 directly via the laser beam 13a, and indirectly after being partially reflected by the half-circuit 13, and is imaged on the surface of the workpiece. However, the power distribution is such that a step is formed between the central portion and both sides thereof, and a scribe groove having a cross section as shown in FIG. 4 is formed.
以上の如く本発明品にあってはスクライブ溝の溝幅方向
の中央部で溝深さが深く、その両側では溝深さを浅くし
て相互の間に段差を形成したから、レーザビームの１回
の走査で容易に、しかも確実にバターニングが可能とな
り、工数の省略が図れるなど本発明は優れた効果を奏す
るものである。As described above, in the product of the present invention, the groove depth is deep at the central part of the scribe groove in the groove width direction, and the groove depth is made shallow on both sides to form a step between them. The present invention has excellent effects, such as making it possible to easily and reliably pattern the pattern with a single scan and reducing the number of man-hours.
第１図は本発明品のスクライブ溝を拡大した状態を示す
斜視図、第２図はレーザスクライブに用いたレーザビー
ムのパワー分布図、第３図（イ〉。
（ロ）はデフォーカシングの態様を示す説明図、第４図
は本発明の他の例を示す断面構造図、第５図は第４図の
レーザスクライブに用いた結像光学系の説明図、第６図
は従来のレーザビームのパワー分布図、第７図（イ）、
（ロ）は従来のレーザスクライブの不都合例を示す説明
図である。
１・・・絶縁基板 ２・・・透明導電膜３・・・アモル
ファスシリコン層 ４・・・金属電極５．６・・・スク
ライブ溝
特 許 出願人 三洋電機株式会社Figure 1 is a perspective view showing an enlarged state of the scribe groove of the product of the present invention, Figure 2 is a power distribution diagram of the laser beam used for laser scribing, and Figure 3 (a). (b) is the mode of defocusing. 4 is a cross-sectional structural diagram showing another example of the present invention, FIG. 5 is an explanatory diagram of the imaging optical system used for laser scribing in FIG. 4, and FIG. 6 is a conventional laser beam Power distribution diagram, Figure 7 (a),
(B) is an explanatory diagram showing an example of a disadvantage of conventional laser scribing. 1... Insulating substrate 2... Transparent conductive film 3... Amorphous silicon layer 4... Metal electrode 5. 6... Scribe groove patent Applicant Sanyo Electric Co., Ltd.
Claims (1)
層、金属電極を順次積層形成し、前記金属電極表面側か
ら高エネルギビームを１回走査してスクライブ溝を形成
して構成した複数の光起電力素子を集積してなる太陽電
池において、 前記スクライブ溝は溝幅方向の中央部で深 く、その両側部で浅くして溝の中央部と両側部との間に
夫々段差を形成してあることを特徴とする太陽電池。[Claims] 1. A transparent conductive film, an amorphous silicon layer, and a metal electrode are sequentially laminated on an insulating substrate, and a scribe groove is formed by scanning a high-energy beam once from the surface side of the metal electrode. In the solar cell configured by integrating a plurality of photovoltaic elements, the scribe groove is deep at the center in the groove width direction and shallow at both sides, so that there are steps between the center and both sides of the groove, respectively. A solar cell characterized by comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1200751A JPH0364043A (en) | 1989-08-01 | 1989-08-01 | Solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1200751A JPH0364043A (en) | 1989-08-01 | 1989-08-01 | Solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0364043A true JPH0364043A (en) | 1991-03-19 |
Family
ID=16429568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1200751A Pending JPH0364043A (en) | 1989-08-01 | 1989-08-01 | Solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0364043A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6255621B1 (en) * | 2000-01-31 | 2001-07-03 | International Business Machines Corporation | Laser cutting method for forming magnetic recording head sliders |
| JP2002540950A (en) * | 1999-04-07 | 2002-12-03 | シーメンス ソーラー ゲゼルシャフト ミット ベシュレンクテル ハフツング | Apparatus and method for peeling a thin layer on a carrier material |
| JP2005252245A (en) * | 2004-02-03 | 2005-09-15 | Showa Denko Kk | Gallium nitride-based compound semiconductor wafer |
| US7087857B2 (en) * | 2003-08-12 | 2006-08-08 | Disco Corporation | Method of dividing a workpiece in the form of a plate having a layer and a substrate made of different materials |
| US7194803B2 (en) * | 2001-07-05 | 2007-03-27 | Flowserve Management Company | Seal ring and method of forming micro-topography ring surfaces with a laser |
| JP2011040462A (en) * | 2009-08-07 | 2011-02-24 | Mitsubishi Electric Corp | Photoelectric conversion device, and method of manufacturing the same |
| USRE43400E1 (en) | 2000-09-20 | 2012-05-22 | Electro Scientific Industries, Inc. | Laser segmented cutting, multi-step cutting, or both |
| WO2013051323A1 (en) * | 2011-10-03 | 2013-04-11 | 三菱電機株式会社 | Solar cell element and method for manufacturing same |
| CN110504333A (en) * | 2019-09-19 | 2019-11-26 | 通威太阳能（合肥）有限公司 | Z-shaped pattern slotting structure suitable for thin-sheet PERC battery |
| US10987761B2 (en) * | 2017-04-13 | 2021-04-27 | Elfab Limited | Method of creating a burst groove by laser scoring |
-
1989
- 1989-08-01 JP JP1200751A patent/JPH0364043A/en active Pending
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|---|---|---|---|---|
| JP2002540950A (en) * | 1999-04-07 | 2002-12-03 | シーメンス ソーラー ゲゼルシャフト ミット ベシュレンクテル ハフツング | Apparatus and method for peeling a thin layer on a carrier material |
| US6255621B1 (en) * | 2000-01-31 | 2001-07-03 | International Business Machines Corporation | Laser cutting method for forming magnetic recording head sliders |
| USRE39001E1 (en) | 2000-01-31 | 2006-03-07 | Electro Scientific Industries, Inc. | Laser cutting method for forming magnetic recording head sliders |
| USRE43400E1 (en) | 2000-09-20 | 2012-05-22 | Electro Scientific Industries, Inc. | Laser segmented cutting, multi-step cutting, or both |
| USRE43487E1 (en) | 2000-09-20 | 2012-06-26 | Electro Scientific Industries, Inc. | Laser segmented cutting |
| US7194803B2 (en) * | 2001-07-05 | 2007-03-27 | Flowserve Management Company | Seal ring and method of forming micro-topography ring surfaces with a laser |
| US7087857B2 (en) * | 2003-08-12 | 2006-08-08 | Disco Corporation | Method of dividing a workpiece in the form of a plate having a layer and a substrate made of different materials |
| JP2005252245A (en) * | 2004-02-03 | 2005-09-15 | Showa Denko Kk | Gallium nitride-based compound semiconductor wafer |
| JP2011040462A (en) * | 2009-08-07 | 2011-02-24 | Mitsubishi Electric Corp | Photoelectric conversion device, and method of manufacturing the same |
| WO2013051323A1 (en) * | 2011-10-03 | 2013-04-11 | 三菱電機株式会社 | Solar cell element and method for manufacturing same |
| US10987761B2 (en) * | 2017-04-13 | 2021-04-27 | Elfab Limited | Method of creating a burst groove by laser scoring |
| CN110504333A (en) * | 2019-09-19 | 2019-11-26 | 通威太阳能（合肥）有限公司 | Z-shaped pattern slotting structure suitable for thin-sheet PERC battery |
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