JPH0354142A - Production of ceramics utilizing growth of abnormal grain - Google Patents
Production of ceramics utilizing growth of abnormal grainInfo
- Publication number
- JPH0354142A JPH0354142A JP1187528A JP18752889A JPH0354142A JP H0354142 A JPH0354142 A JP H0354142A JP 1187528 A JP1187528 A JP 1187528A JP 18752889 A JP18752889 A JP 18752889A JP H0354142 A JPH0354142 A JP H0354142A
- Authority
- JP
- Japan
- Prior art keywords
- ceramics
- abnormal grain
- ceramic
- abnormal
- grain growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 37
- 230000002159 abnormal effect Effects 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000000126 substance Substances 0.000 claims abstract description 15
- 230000001737 promoting effect Effects 0.000 claims abstract description 10
- 229910052573 porcelain Inorganic materials 0.000 claims description 16
- 239000011159 matrix material Substances 0.000 claims description 5
- 238000010304 firing Methods 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 2
- 239000007791 liquid phase Substances 0.000 abstract description 2
- LEDMRZGFZIAGGB-UHFFFAOYSA-L strontium carbonate Chemical compound [Sr+2].[O-]C([O-])=O LEDMRZGFZIAGGB-UHFFFAOYSA-L 0.000 abstract description 2
- 229910000018 strontium carbonate Inorganic materials 0.000 abstract description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 abstract 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract 2
- 229910002370 SrTiO3 Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910003465 moissanite Inorganic materials 0.000 abstract 1
- 239000012071 phase Substances 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000011222 crystalline ceramic Substances 0.000 description 1
- 229910002106 crystalline ceramic Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- 229910021355 zirconium silicide Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は、同一素体内に異なった粒径を有する部位をも
つ複合セラミックス部品の製造方法に関し、特に当該部
位゛の異常粒成長を異常粒成長促進物質を塗布・印刷す
ることで実現する磁器製造法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing composite ceramic parts having regions with different grain sizes within the same element body, and in particular to suppress abnormal grain growth in the region. This relates to a method of manufacturing porcelain that is realized by applying and printing a growth-promoting substance.
［従来の技術］
近年、酸化アルミニウムや酸化ジルコニウム等のような
酸化物系セラミックスや、炭化ケイ素，窒化ケイ素，サ
イアロン等のケイ化系セラミックスを用いた磁器構造物
が実用化されている。[Prior Art] In recent years, porcelain structures using oxide ceramics such as aluminum oxide and zirconium oxide, and silicide ceramics such as silicon carbide, silicon nitride, and sialon have been put into practical use.
しかしながら、これら従来のセラミックス構造物には、
加工上及び取扱上不可避な表面傷を生ずると、外部応力
が集中してこわれやす《、信頼性に欠ける点があった。However, these conventional ceramic structures have
When unavoidable surface scratches occur during processing and handling, external stress concentrates and the product tends to break, resulting in a lack of reliability.
これらの欠点を解消するための方法としては、従来から
種々の方法が提案されている。Various methods have been proposed to overcome these drawbacks.
例えば、セラミックスの表面に、石英ガラスのような熱
膨脹係数の小さな層を設け、常温でこの層に圧縮応力が
加わることを利用して、表面傷の影響を軽減し、高強度
化、高信頼化を図ることが提案されている。For example, by creating a layer with a small coefficient of thermal expansion, such as quartz glass, on the surface of ceramics and utilizing the fact that compressive stress is applied to this layer at room temperature, the effects of surface scratches can be reduced, resulting in higher strength and reliability. It is proposed to aim for.
また特開昭８１−１８６２５７号公報には、第２図のセ
ラミックス構造物の組織構造説明図に示すように、■使
用時に外部応力を受ける構造物の表面層１１を構成する
セラミックス粒子の粒径が構造物内部１２を構成するセ
ラミックス粒子という限定された領域について、かつ
■粒径が構造物内部を構戊するセラミックス粒子の粒径
よりも大きいという限定された条件で、任意の部位を任
意の程度粒或長を促進させたセラミックス構造物
が開示されている。Furthermore, as shown in the explanatory diagram of the microstructure of a ceramic structure in FIG. 2, JP-A No. 81-186257 describes the following: is a limited region of ceramic particles that make up the interior of the structure 12, and (2) the particle size is larger than the particle size of the ceramic particles that make up the interior of the structure. Ceramic structures with moderately enhanced grain elongation are disclosed.
また、単結晶セラミックスを製造する目的で、特開昭８
３−１１５９１号公報には、
多結晶セラミックスの平滑面と当該セラミックスとほぼ
同一組成を有した単結晶セラミックスの平滑面とを対峙
させ、貼り合わせ、その間に、異常粒成長促進元素を少
なくとも一種を含む接着層で固着せしめる工程と、昇温
し、前記接着層が拡散し始め、前記多結晶・単結晶セラ
ミックス平滑面が接触せしめる接合温度での処理工程と
、前記多結晶セラミックスの異常粒成長を生じ始める温
度以下の温度で、接合温度以上の拡散，固相成長平衡条
件に近い温度に保持しながら加熱する固相成長工程とを
含むことを特徴とする単結晶セラミックスの製造方法が
開示されている。In addition, for the purpose of manufacturing single crystal ceramics,
Publication No. 3-11591 discloses that a smooth surface of a polycrystalline ceramic and a smooth surface of a single crystal ceramic having almost the same composition as the ceramic are faced and bonded together, and at least one element that promotes abnormal grain growth is added between them. a process of fixing the polycrystalline ceramic with an adhesive layer containing the adhesive; a treatment process at a bonding temperature where the adhesive layer begins to diffuse as the temperature rises and the smooth surfaces of the polycrystalline and single-crystalline ceramics come into contact with each other; and abnormal grain growth of the polycrystalline ceramic. Disclosed is a method for manufacturing single crystal ceramics, which comprises a solid phase growth step of heating at a temperature below the temperature at which the ceramic begins to form, diffusion above the bonding temperature, and maintaining the temperature close to solid phase growth equilibrium conditions. There is.
また、原料ｍ或あるいは粒径が異なるセラミックスを任
意の部位に埋め込むことにより、異なる粒構造を同一素
体に実現する方法も知られている。Furthermore, a method is also known in which different grain structures are realized in the same element body by embedding raw materials m or ceramics having different grain sizes in arbitrary parts.
［発明が解決しようとする課題］
しかしながら、従来の特開昭６１−１８８２５７号公報
に開示されるような赤外線イメージ炉、レーザー光等に
より部分的に昇温するのみでは、粒径が極端に異なる部
位を作成することは困難であるという問題点がある。[Problems to be Solved by the Invention] However, if the temperature is only partially raised using an infrared image furnace, a laser beam, etc. as disclosed in the conventional Japanese Patent Application Laid-Open No. 188257/1989, the particle size will be extremely different. There is a problem in that it is difficult to create the parts.
また特開昭６３−１１５９１号公報に示されるように多
結晶セラミックス平滑面と単結晶セラミックス平滑面を
対峙させる方法では、単結晶のかつ平滑な面を利用する
ためコスト増となること、異常粒成長促進元素を少なく
とも一種含む接着層で固着する工程が必要なため、コス
ト増となること等の問題点がある。Furthermore, as shown in JP-A No. 63-11591, the method of confronting the smooth surface of polycrystalline ceramics with the smooth surface of single-crystal ceramics has the disadvantages of increased costs and abnormal grains due to the use of the smooth surfaces of single crystals. Since a step of fixing with an adhesive layer containing at least one growth-promoting element is required, there are problems such as increased cost.
また、埋め込みによる方法は、工程が複雑となってしま
うという問題点がある。例えば、乾粉成形においては、
一度金型にて埋め込む部位を凹とした成形体を作戊した
後、その部位に、組成あるいは粒径が異なる他の原料を
入れ、再成型しなければならない。Furthermore, the embedding method has a problem in that the process becomes complicated. For example, in dry powder molding,
Once a molded body is made using a mold with a concave portion at the part to be embedded, another raw material with a different composition or particle size must be placed in that part and the molded body must be remolded.
それに加え、異常粒成長によって得られるような極端な
粒径の差異を生じさせることは、困難であるという問題
点がある。In addition, there is a problem in that it is difficult to produce extreme differences in grain size such as those obtained by abnormal grain growth.
即ち本発明の目的は、以上の問題点を解決するために、
簡単な工程により任意の当該部位の異常粒成長を、異常
粒或長促進物質を塗布及び／又は印刷することで実現す
る磁器製造法を提供することにある。That is, the purpose of the present invention is to solve the above problems.
The object of the present invention is to provide a method for manufacturing porcelain that realizes abnormal grain growth at any desired location through simple steps by applying and/or printing an abnormal grain growth promoting substance.
［課題を解決するための手段］
本発明は、セラミックスの製造法において、焼成前に、
磁器成形体の適当部位に、異常粒成長促進物質を塗布及
び／又は印刷し、積極的に異常粒或長を起こし、焼戊す
ることにより該セラミックス母相に比べ粒径の大きい領
域を生じさせることを特徴とする異常粒成長を利用した
磁器製造法である。[Means for Solving the Problems] The present invention provides a method for manufacturing ceramics in which, before firing,
Applying and/or printing a substance that promotes abnormal grain growth to appropriate parts of a porcelain molded body to actively cause abnormal grain length, and by firing, a region with a larger grain size than the ceramic matrix is created. This is a porcelain manufacturing method that utilizes abnormal grain growth.
［作用］
本発明の異常粒成長を利用した磁器製造法は、異常粒成
長促進物質を塗布及び／又は印刷するものであるが、異
常粒或長促進物質が昇温過程において、一部拡散し、該
セラミックス母相に比べ低い温度で液相成分が生じ、そ
れに引き続いて、異常粒成長を生じさせるものである。[Function] The porcelain manufacturing method using abnormal grain growth of the present invention involves coating and/or printing a substance that promotes abnormal grain growth. A liquid phase component is generated at a temperature lower than that of the ceramic matrix, which subsequently causes abnormal grain growth.
セラミックス粒の成長促進物質として、ＭｇＯ，ＺｒＯ
，ＴｉＯ ，ＳｒＣＯ３から選ばレタ１２２
扛又は２種以上を塗布及び／又は印刷することにより、
印刷物質、その濃度、印刷回数等を適宜選択することに
より、又Ａ，Ｑ Ｏ ，ＳｒＴｉ０３，２３
ＭｇＯ，ＳｉＣ，Ｓｉ Ｎ ，サイアロンから選３
４
ばれた１種又は２種以上を磁器として用いることが出来
る。MgO, ZrO as a growth promoting substance for ceramic grains
, TiO , SrCO3 by coating and/or printing two or more types.
By appropriately selecting the printing material, its density, the number of times of printing, etc., it is also possible to select from A, Q O , SrTi03, 23 MgO, SiC, Si N , and SiAlON.
4 One or more of the discovered types can be used as porcelain.
次に本発明の実施例について述べる。Next, examples of the present invention will be described.
［実施例］
第１図は、本発明を適用した場合の磁器構造体の組織の
模式図である。[Example] FIG. 1 is a schematic diagram of the structure of a porcelain structure to which the present invention is applied.
図において、１は磁器成形体、２は異常粒戊長促進物質
を塗布した領域、３はセラミックス母相、４は異常粒成
長した領域である。In the figure, 1 is a porcelain molded body, 2 is a region coated with an abnormal grain elongation promoting substance, 3 is a ceramic matrix, and 4 is a region where abnormal grain growth has occurred.
まずＳｒ／ＴＩ比（化学量論比）が０．９５８６である
チタン酸ストロンチウム系粒界型半導体コンデンサ−磁
器成形体１の表面に、Ｔ１０。をｌＯ重量％、ポリビニ
ルアルコールＩＯ重量％を純水に分散したペーストを、
１ｍ１間隔に約０ ． ２ ｍｍ角に印刷し、この磁器
成形体１を１４５０℃、５時間，不活性雰囲気下で焼或
することにより、一辺が約０．５ｍ＋ｓ角の異常粒戊長
した領域４を得た。First, T10 was applied to the surface of a strontium titanate-based grain boundary type semiconductor capacitor-porcelain molded body 1 having an Sr/TI ratio (stoichiometric ratio) of 0.9586. A paste in which 10% by weight of polyvinyl alcohol and IO% by weight of polyvinyl alcohol was dispersed in pure water was prepared.
Approximately 0 per 1m1 interval. The porcelain molded body 1 was printed at 2 mm square and fired in an inert atmosphere at 1450° C. for 5 hours to obtain a region 4 with abnormally elongated grains each having a side of approximately 0.5 m+s square.
この後、粒界絶縁物を拡散後、１ ｍｒａ間隔に異常粒
成長した領域４上に、一辺が約０．５關の正方形に電極
を印刷した。Thereafter, after diffusing the grain boundary insulator, electrodes were printed in a square shape of about 0.5 square meters on each side on the region 4 where the abnormal grains had grown at intervals of 1 mra.
なお本実施例においては、異常粒成長促進物質として、
Ｔ１０２をポリビニルアルコール及び純水に分散したペ
ーストを使用したがこの他のＭｇＯ，ＺｒＯ ，Ｔｉ
Ｏ ，ＳｒＣＯ３から選ばれた１２２
種又は２種以上を使用しても良いことは勿論である。In this example, as the abnormal grain growth promoting substance,
A paste of T102 dispersed in polyvinyl alcohol and pure water was used, but other materials such as MgO, ZrO, Ti
Of course, 122 types or two or more types selected from O 2 and SrCO 3 may be used.
また、本実施例においては、異常粒或長促進物質を印刷
したが、塗布しても同様な効果を奏するものである。Further, in this example, the abnormal grain growth promoting substance was printed, but the same effect can be obtained even if the abnormal grain growth promoting substance is applied.
［発明の効果］
本発明の磁器製造法１＝よれば、磁器成形体の表面に、
異常粒成長促進物質を塗布及び／又は印刷するという簡
便な方法を用いることにより、赤外線イメージ炉、レー
ザ光といった特別な加熱方法を利用しないため、安価か
つ異常粒成長を利用するため、粒径が極端に異なる部位
を作成することが出来るものである。[Effect of the invention] According to the porcelain manufacturing method 1 of the present invention, on the surface of the porcelain molded body,
By using a simple method of coating and/or printing a substance that promotes abnormal grain growth, it is possible to reduce the particle size at a low cost because no special heating method such as an infrared image furnace or laser beam is used, and because abnormal grain growth is utilized. It is possible to create extremely different parts.
また、単結晶セラミックス平滑面を用意する必要もない
ため、安価に異常粒成長を起こすことが出来、さらに埋
め込みにより組成又は粒径の異なる部位を作るという複
雑な工程も不要なため安価である等の効果を奏するもの
である。In addition, since there is no need to prepare a smooth single crystal ceramic surface, abnormal grain growth can be caused at low cost, and there is no need for the complicated process of creating parts with different compositions or grain sizes by embedding, so it is inexpensive. It has the following effects.
第１図は、本発明を適用した場合の磁器構造体の組織の
模式図、第２図は、従来のセラミックス構造物の組織説
明図である。
図において、１：磁器成形体、２：異常粒成長促進物質
を塗布した領域、３：セラミックス母相、４：異常粒成
長した領域、１１：表面層，１２：内部。FIG. 1 is a schematic diagram of the structure of a ceramic structure to which the present invention is applied, and FIG. 2 is an explanatory diagram of the structure of a conventional ceramic structure. In the figure, 1: porcelain molded body, 2: region coated with abnormal grain growth promoting substance, 3: ceramic matrix, 4: region where abnormal grain growth has occurred, 11: surface layer, 12: interior.
Claims (1)
の適当部位に、異常粒成長促進物質を塗布及び／又は印
刷し、焼成することにより該セラミックス母相に比べ粒
径の大きい領域を生じさせることを特徴とする異常粒成
長を利用した磁器製造法。In a method for manufacturing ceramics, before firing, applying and/or printing an abnormal grain growth promoting substance on appropriate parts of a porcelain molded body and firing it to produce a region having a larger grain size than the ceramic matrix. A method for manufacturing porcelain that utilizes abnormal grain growth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1187528A JPH0354142A (en) | 1989-07-21 | 1989-07-21 | Production of ceramics utilizing growth of abnormal grain |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1187528A JPH0354142A (en) | 1989-07-21 | 1989-07-21 | Production of ceramics utilizing growth of abnormal grain |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0354142A true JPH0354142A (en) | 1991-03-08 |
Family
ID=16207665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1187528A Pending JPH0354142A (en) | 1989-07-21 | 1989-07-21 | Production of ceramics utilizing growth of abnormal grain |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0354142A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62136702A (en) * | 1985-12-07 | 1987-06-19 | キヤノン株式会社 | Ceramics, its manufacture and electronic circuit substrate employing the same |
| JPH02296763A (en) * | 1989-05-12 | 1990-12-07 | Nkk Corp | Production of porcelain |
-
1989
- 1989-07-21 JP JP1187528A patent/JPH0354142A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62136702A (en) * | 1985-12-07 | 1987-06-19 | キヤノン株式会社 | Ceramics, its manufacture and electronic circuit substrate employing the same |
| JPH02296763A (en) * | 1989-05-12 | 1990-12-07 | Nkk Corp | Production of porcelain |
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