JPH034036Y2 - - Google Patents
Info
- Publication number
- JPH034036Y2 JPH034036Y2 JP9940387U JP9940387U JPH034036Y2 JP H034036 Y2 JPH034036 Y2 JP H034036Y2 JP 9940387 U JP9940387 U JP 9940387U JP 9940387 U JP9940387 U JP 9940387U JP H034036 Y2 JPH034036 Y2 JP H034036Y2
- Authority
- JP
- Japan
- Prior art keywords
- block type
- type receiver
- protrusion
- workpiece
- cross
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000002441 X-ray diffraction Methods 0.000 claims description 6
- 239000013078 crystal Substances 0.000 description 18
- 238000005259 measurement Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000012790 confirmation Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 239000000470 constituent Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Jigs For Machine Tools (AREA)
Description
【考案の詳細な説明】
本考案は、半導体製造の初期工程で半導体単結
晶インゴツトのオリエンテ−シヨンフラツト(以
下OFという)面を確認する際や、その後の単結
晶結晶軸の方位測定をする際に用いられる測定用
治具に関する。[Detailed description of the invention] This invention is useful when confirming the orientation flat (hereinafter referred to as OF) plane of a semiconductor single crystal ingot in the initial process of semiconductor manufacturing, and when measuring the orientation of the single crystal axis afterwards. It relates to a measuring jig used.
半導体デバイスの製造工程においては、デバイ
ス特性との関係から、用いられる半導体単結晶ウ
エ−ハは、その結晶方位が一定になるよう管理さ
れている。この管理の手段は、円形ウエ−ハの外
周の一部分を平らに切り欠き、この面を基準にす
ることにより行なう。この切り欠き面をOF面と
いい、半導体製造工程の初期段階、すなわち単結
晶インゴツトの状態のとき、その決められた側面
を研削することによりOF面を形成している。OF
面形成後、確認のため、X線回析法によりOF面
の測定を行ない、さらに単結晶の結晶軸方位測定
をする。ここで、OF面確認のためにはインゴツ
ト側面のOF面を、結晶軸測定にためにはインゴ
ツト断面を計測することになる。
In the manufacturing process of semiconductor devices, the semiconductor single crystal wafers used are controlled to have a constant crystal orientation due to the relationship with device characteristics. This control is carried out by cutting a portion of the outer periphery of a circular wafer flat and using this plane as a reference. This notched surface is called the OF surface, and at the initial stage of the semiconductor manufacturing process, that is, when it is in the state of a single crystal ingot, the OF surface is formed by grinding the determined side surface. OF
After the plane is formed, for confirmation, the OF plane is measured by X-ray diffraction, and the crystal axis orientation of the single crystal is also measured. Here, to confirm the OF plane, the OF plane on the side surface of the ingot is measured, and to measure the crystal axis, the ingot cross section is measured.
ところが、このとき用いられる計測機器は、
OF面確認時と結晶軸測定時とで第6図及び第7
図に示すように、別々の形状のワ−ク載置部で構
成されているため交換の必要がある。交換の際
は、ワ−ク載置部10,10′の取り外し、取り
付けの操作がボルト11に依つているため面倒で
時間がかかり、しかも載置部が重量物のため危険
がともない作業効率ひいては生産効率を低下させ
ていた。
However, the measuring equipment used at this time is
Figures 6 and 7 show the results when confirming the OF plane and when measuring the crystal axis.
As shown in the figure, it is composed of workpiece mounting sections of different shapes, and therefore needs to be replaced. During replacement, the operation of removing and attaching the workpiece placement parts 10, 10' depends on the bolts 11, which is troublesome and time-consuming.Moreover, since the workpiece placement parts are heavy, there is danger, which reduces work efficiency and ultimately reduces work efficiency. This was reducing production efficiency.
本考案は、前記のような問題点を解決すべくな
されたもので、
斜面及び/又は上面に若干の幅をもつ一以上の
直線溝1を奥行方向に穿設したVブロツク型受器
2と、
前記直線溝1の断面形状に略一致する断面形状
を有し、前記直線溝に対して摺動可能な突部3を
備え且つ、前記Vブロツク型受器2の斜面及び/
又は上面に密着して摺動できる面をその一構成面
として前記突部以外にもつ断面多角形のワ−ク載
置器4と、
前記ワ−ク載置器4にその上面後端部に直立し
て設けられた、X線回析用窓5を有するワ−ク支
持体6と、
から成り、
Vブロツク型受器2に穿説された直線溝1とワ
−ク載器器4の突部3とが係合摺動可能であるこ
とにより、ワ−ク載置器が、Vブロツク型受器か
ら適宜着脱できるようにしたものである。
The present invention was made to solve the above-mentioned problems, and includes a V-block type receiver 2 in which one or more straight grooves 1 with a slight width are bored in the depth direction on the slope and/or the upper surface. , has a cross-sectional shape that substantially matches the cross-sectional shape of the straight groove 1, is provided with a protrusion 3 that is slidable with respect to the straight groove, and has a protrusion 3 that is slidable on the slope of the V-block type receiver 2 and/or
Alternatively, a workpiece holder 4 having a polygonal cross section and having a surface other than the protrusion as one of its constituent surfaces that can slide in close contact with the upper surface, and a workpiece mounter 4 having a surface on the rear end of the upper surface thereof. A workpiece support 6 having an X-ray diffraction window 5 installed upright; Since the protrusion 3 can be engaged and slid, the workpiece mounting device can be attached to and detached from the V-block type receiver as appropriate.
本考案においては、Vブロツク型受器に穿設さ
れた直線溝に、ワ−ク載置器の突部が係合摺動す
る。Vブロツク型受器の斜面及び/又は上面に密
着する一面を有するワ−ク載置器は、したがつ
て、前記直線溝をあたかもレ−ルとするような状
態でVブロツク型受器上に納まることになる。
OF面確認時は、Vブロツク型受器にワ−ク載置
器を取り付けた状態で用いられ(これを第1図及
び第2図に示す)、結晶方位測定時には、ワ−ク
載置器を外したVブロツク型受器のみの状態で使
用される(これを第4図及び第5図に示す)。
In the present invention, the protrusion of the workpiece holder slides into engagement with a straight groove bored in the V-block type receiver. Therefore, the workpiece holder, which has one surface in close contact with the slope and/or top surface of the V-block type receiver, can be placed on the V-block type receiver with the straight groove as if it were a rail. It will fit.
When checking the OF surface, a workpiece holder is attached to the V-block type receiver (this is shown in Figures 1 and 2), and when measuring crystal orientation, the workpiece holder is used It is used with only the V-block type receiver with the holder removed (this is shown in Figures 4 and 5).
以下、実施例をあげながら本考案をさら詳説す
る。 Hereinafter, the present invention will be explained in more detail by giving examples.
第1図及び第2図に示すように、ワ−ク載置器
4をVブロツク型受器2にセツトした装置にOF
面を形成したシリコン単結晶インゴツト7を載せ
OF面の確認を行なつた。次に、ワ−ク載置器を
Vブロツク型受器から取り外し、Vブロツク型受
器上に第4図及び第5図に示すようにシリコン単
結晶インゴツト7をセツトし結晶軸方位測定を行
なつた。
OF
A silicon single crystal ingot 7 with a surface formed thereon is placed.
The OF surface was confirmed. Next, the workpiece mounting device was removed from the V-block type receiver, and the silicon single crystal ingot 7 was set on the V-block type receiver as shown in Figs. 4 and 5, and the crystal axis orientation was measured. Summer.
OF確認終了から、Vブロツク型受器をワ−ク
載置器から取外し結晶軸方位測定が終了するまで
に要した時間は、インゴツト1本当りほぼ4分
で、従来の12分に比し約1/3に短縮され、作業
効率が向上した。 The time required from the completion of OF confirmation to the completion of removing the V-block receiver from the workpiece holder and completing the crystal axis orientation measurement was approximately 4 minutes per ingot, compared to the conventional 12 minutes. The time was reduced to 1/3, improving work efficiency.
ワ−ク載置器4のVブロツク型受器2への取り
付けは、Vブロツク型受器斜面下に穿設された直
線溝1に、ワ−ク載置器下部に設けられている突
部3を係合させ奥行方向に摺動スライドさせて行
ない、取り外しはこの逆を行なう。 The workpiece holder 4 is attached to the V-block type receiver 2 by inserting a protrusion provided at the bottom of the workpiece holder into a straight groove 1 drilled under the slope of the V-block type receiver. 3 is engaged and slid in the depth direction, and removal is done in the opposite manner.
また、OF面確認時に用いるワ−ク載置器上の
ワ−ク支持体6にはX線回析用窓5が設けてあ
り、ここから計測用のX線8が入射し、OF面で
反射してX線回析器の受信側へ向かう。 In addition, the workpiece support 6 on the workpiece mounting device used when confirming the OF surface is provided with an X-ray diffraction window 5 through which X-rays 8 for measurement are incident and It is reflected and goes to the receiving side of the X-ray diffraction device.
本考案は、以上のような構成によりOF面確認
時と、結晶方位測定時とで従来のように治具交換
作業を行なう必要はなく、適宜ワ−ク載置器を取
り付け域は取り外しを行なえばいい。この作業
は、従来のように、ボルトの取り外しや、重量物
の移動等の時間と人手のかかるしかも危険なもの
ではなく、ただ、Vブロツク型受器に穿設された
直線溝とワ−ク載置器の突部とを係合させて取り
付け、もしくは取り外しを行なうのみであるか
ら、きわめて簡単で安全なしかも効率的なものと
なる。
With the above-mentioned configuration, the present invention eliminates the need to replace jigs when checking the OF plane and when measuring the crystal orientation, and the workpiece mounting device can be removed from the mounting area as needed. Bye. This work is not as time-consuming and labor-intensive as in the past, such as removing bolts and moving heavy objects, and is dangerous. Since it is only necessary to attach or detach by engaging the protrusion of the mounting device, it is extremely simple, safe and efficient.
また装置の安定性についても、ワ−ク載置器を
Vブロツク型受器に搭載している状態では、ワ−
ク載置器は突部以外の面でもVブロツク型受器に
摺動可能に密着接しているから、ガタつくことは
ない。 In addition, regarding the stability of the device, when the workpiece mounting device is mounted on the V-block type receiver, the workpiece
Since the block mounting device is slidably in close contact with the V-block type receiver on surfaces other than the protrusion, there is no wobbling.
第1図は、本考案を用いたOF面確認のための
測定状態を示す平面図、第2図は、本考案を用い
たOF面確認のための測定状態を示す正面図、第
3図は、本考案の一実施例に用いられるワ−ク載
置器の斜視図、第4図は本考案を用いた結晶方位
の測定状態を示す平面図、第5図は、本考案を用
いた結晶方位の測定状態を示す正面図、第6図
は、従来のOF面確認のための測定装置の要部縦
断面図、第7図は、従来の結晶方位測定のための
測定装置の要部縦断面図、第8図は、本考案を用
いたOF面確認のための他の測定状態を示す正面
図。
1……直線溝、2……Vブロツク型受器、3…
…突部、4……ワ−ク載置器、5……X線回析用
窓、6……ワ−ク支持体、7……シリコン単結晶
インゴツト、8……X線、10,10′……ワ−
ク載置部、11……ボルト。
Fig. 1 is a plan view showing the measurement state for confirming the OF surface using the present invention, Fig. 2 is a front view showing the measurement state for confirming the OF surface using the present invention, and Fig. 3 is a plan view showing the measurement state for confirming the OF surface using the present invention. , a perspective view of a workpiece mounting device used in an embodiment of the present invention, FIG. 4 is a plan view showing the measurement state of crystal orientation using the present invention, and FIG. Figure 6 is a front view showing the measurement state of orientation, Figure 6 is a vertical cross-sectional view of the main part of a conventional measuring device for confirming the OF plane, and Figure 7 is a vertical cross-sectional view of the main part of a conventional measuring device for measuring crystal orientation. FIG. 8 is a front view showing another measurement state for confirming the OF surface using the present invention. 1... Straight groove, 2... V block type receiver, 3...
... Protrusion, 4 ... Workpiece mounting device, 5 ... X-ray diffraction window, 6 ... Workpiece support, 7 ... Silicon single crystal ingot, 8 ... X-ray, 10, 10 '...Wa-
Placement part, 11...Bolt.
Claims (1)
直線溝を奥行方向に穿設したVブロツク型受器
と、 前記直線溝の断面形状に略一致する断面形状を
有し、前記直線溝に対し摺動可能な突部を備え且
つ、前記Vブロツク型受器の斜面及び/又は上面
に密着して摺動できる面をその一構成面として前
記突部以外にもつ断面多角形のワ−ク載置器と、 前記ワ−ク載置器に、その上面後端部に直立し
て設けられた、X線回析用窓を有するワ−ク支持
体と、 から成り、 前記直線溝と前記突部とが係合摺動可能である
ことにより、前記ワ−ク載置器が、前記Vブロツ
ク型受器から適宜着脱できることを特徴とする結
晶方位−オリエンテ−シヨンフラツト面測定用治
具。[Claims for Utility Model Registration] A V-block type receiver in which one or more straight grooves with a slight width are bored in the depth direction on the slope and/or the upper surface, and a cross-sectional shape that substantially matches the cross-sectional shape of the straight groove. , and includes a protrusion that can slide in the linear groove, and a surface that can slide in close contact with the slope and/or upper surface of the V-block type receiver, other than the protrusion. a workpiece support having a polygonal cross-section; a workpiece support having an X-ray diffraction window provided upright on the rear end of the upper surface of the workpiece support; The straight groove and the protrusion are capable of engaging and sliding, so that the workpiece mounting device can be attached to and detached from the V-block type receiver as appropriate. A jig for measuring flat surfaces.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9940387U JPH034036Y2 (en) | 1987-06-30 | 1987-06-30 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9940387U JPH034036Y2 (en) | 1987-06-30 | 1987-06-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS646045U JPS646045U (en) | 1989-01-13 |
JPH034036Y2 true JPH034036Y2 (en) | 1991-02-01 |
Family
ID=31326529
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9940387U Expired JPH034036Y2 (en) | 1987-06-30 | 1987-06-30 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH034036Y2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2569862B2 (en) * | 1990-02-13 | 1997-01-08 | 三菱電機株式会社 | X-ray exposure apparatus and X-ray exposure method |
JP2008207272A (en) * | 2007-02-26 | 2008-09-11 | Rex Industries Co Ltd | Band saw machine |
JP6384686B2 (en) * | 2017-01-10 | 2018-09-05 | パルステック工業株式会社 | V groove depth variable stage and X-ray diffraction measurement device |
-
1987
- 1987-06-30 JP JP9940387U patent/JPH034036Y2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS646045U (en) | 1989-01-13 |
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