JPH0337869B2 - - Google Patents
Info
- Publication number
- JPH0337869B2 JPH0337869B2 JP61104660A JP10466086A JPH0337869B2 JP H0337869 B2 JPH0337869 B2 JP H0337869B2 JP 61104660 A JP61104660 A JP 61104660A JP 10466086 A JP10466086 A JP 10466086A JP H0337869 B2 JPH0337869 B2 JP H0337869B2
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- silicon layer
- power supply
- pair
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 42
- 239000004065 semiconductor Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 17
- 239000012535 impurity Substances 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61104660A JPS61263154A (ja) | 1986-05-09 | 1986-05-09 | Ｍｉｓ型半導体記憶装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61104660A JPS61263154A (ja) | 1986-05-09 | 1986-05-09 | Ｍｉｓ型半導体記憶装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51088159A Division JPS6030107B2 (ja) | 1976-07-26 | 1976-07-26 | Ｍｉｓ型半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61263154A JPS61263154A (ja) | 1986-11-21 |
| JPH0337869B2 true JPH0337869B2 (de) | 1991-06-06 |
Family
ID=14386618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61104660A Granted JPS61263154A (ja) | 1986-05-09 | 1986-05-09 | Ｍｉｓ型半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61263154A (de) |
-
1986
- 1986-05-09 JP JP61104660A patent/JPS61263154A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61263154A (ja) | 1986-11-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4920391A (en) | Semiconductor memory device | |
| JPH05167040A (ja) | 集積回路メモリ装置およびその配置構造 | |
| US4084108A (en) | Integrated circuit device | |
| US4631563A (en) | Metal oxide semiconductor field-effect transistor with metal source region | |
| US4290185A (en) | Method of making an extremely low current load device for integrated circuit | |
| US5382807A (en) | Field effect thin film transistor and static-type semiconductor memory device provided with memory cell having complementary field effect transistor and method of manufacturing the same | |
| US4780751A (en) | Semiconductor integrated circuit device | |
| JPH0150114B2 (de) | ||
| JPS62174968A (ja) | 半導体装置 | |
| US4251876A (en) | Extremely low current load device for integrated circuit | |
| JP3058119B2 (ja) | 半導体装置の製造方法 | |
| JP2690242B2 (ja) | 半導体固定記憶装置 | |
| JPS61220371A (ja) | 絶縁基板上ｍｏｓ形集積回路装置 | |
| JPS6030107B2 (ja) | Ｍｉｓ型半導体記憶装置 | |
| JPH07109874B2 (ja) | 半導体装置及びその製造方法 | |
| KR100252560B1 (ko) | 반도체메모리장치및그제조방법 | |
| US6242786B1 (en) | SOI Semiconductor device with field shield electrode | |
| US5359562A (en) | Semiconductor memory having polycrystalline silicon load resistors and CMOS peripheral circuitry | |
| JPH0337869B2 (de) | ||
| US4823179A (en) | Semiconductor memory device with flip-flop memory cells which include polycrystalline load resistors | |
| US5241204A (en) | Semiconductor memory | |
| JPH0828428B2 (ja) | スタテイツク型半導体メモリ | |
| JPS5972159A (ja) | Ｍｉｓ型半導体記憶装置 | |
| EP0496360A2 (de) | Halbleiterspeicherzelle | |
| US5166763A (en) | Static type semiconductor memory device and method of manufacturing thereof |