JPH0337185A - Apparatus for producing single crystal - Google Patents
Apparatus for producing single crystalInfo
- Publication number
- JPH0337185A JPH0337185A JP17146889A JP17146889A JPH0337185A JP H0337185 A JPH0337185 A JP H0337185A JP 17146889 A JP17146889 A JP 17146889A JP 17146889 A JP17146889 A JP 17146889A JP H0337185 A JPH0337185 A JP H0337185A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- heater
- crucible
- shielding
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 6
- 229910052799 carbon Inorganic materials 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 230000020169 heat generation Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 229920000049 Carbon (fiber) Polymers 0.000 description 2
- 239000004917 carbon fiber Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000002775 capsule Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は、ＣＺ法（チョクラルスキー法）やＬＥＣ法（
液体カプセルチョクラルスキー法）等により単結晶を製
造する装置に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention is applicable to the CZ method (Czochralski method) and the LEC method (
This invention relates to an apparatus for producing single crystals using liquid capsule Czochralski method.
［従来の技術］
単結晶を安定成長させるには、ルツボ内の融液の温度勾
配、温度分布を適切にする必要があり、一般に、温度勾
配が小さく、灼熱範囲の広い温度分相であることが望ま
しい。[Prior art] In order to stably grow a single crystal, it is necessary to have an appropriate temperature gradient and temperature distribution of the melt in the crucible, and generally the temperature gradient is small and the temperature phase separation has a wide scorching range. is desirable.
通常、ヒーターの上端部の発熱分布をフラットにするに
は、既存のヒーターの他にアフターヒーターを増設し、
発熱分布を長くする手段がとられている。一方、ヒータ
ーの下端部の発熱分布をフラットにするには、従来、Ｌ
ＥＣ法に用いられる断面「くの字」型のヒーターを備え
た単結晶製造装置が知られている（特開昭５９−１７４
５９３号公報参照）。Normally, in order to flatten the heat distribution at the upper end of the heater, an after-heater is installed in addition to the existing heater.
Measures are being taken to lengthen the heat distribution. On the other hand, in order to flatten the heat generation distribution at the lower end of the heater, conventionally, L
A single crystal manufacturing apparatus equipped with a heater having a dogleg shape in cross section is known for use in the EC method (Japanese Patent Application Laid-Open No. 59-174).
(See Publication No. 593).
このヒーターは、第４図に示すように、単結晶の製造に
用いるルツボ（図示せず）を同軸的に取り囲む円筒形の
側壁部１１と、この側壁部１１にくの字状に連なってこ
れを支える基底部１２と、この基底部１２を支えて電源
電極１３につながる円筒部１４とが一体化形成され、側
壁部１１と基底部１２とにか゛けて複数のスリット（図
示せず）を設けることにより電源電極１３の一方から他
方へつながる一連の抵抗発熱導体としての構造を有し、
かつ基底部１２の肉厚を側壁部１１の最大の肉厚に比し
て同等若しくはそれ以下に形成して構成されている。As shown in FIG. 4, this heater includes a cylindrical side wall 11 that coaxially surrounds a crucible (not shown) used for manufacturing single crystals, and a cylindrical side wall 11 that is connected to the side wall 11 in a dogleg shape. A base part 12 supporting the base part 12 and a cylindrical part 14 supporting the base part 12 and connected to the power supply electrode 13 are integrally formed, and a plurality of slits (not shown) are provided between the side wall part 11 and the base part 12. As a result, it has a structure as a series of resistance heating conductors connected from one side of the power supply electrode 13 to the other,
In addition, the thickness of the base portion 12 is formed to be equal to or less than the maximum thickness of the side wall portion 11.
［発明が解決しようとする課題］
しかしながら、上記従来のいわゆる「くの字」型のヒー
ターを備えた単結晶製造装置においては、ヒーター下端
部の発熱分布をある程度フラットにすることができるも
のの、側壁部１１及び基底部１２の支持が中心部の円筒
部１４で行われている。このため、単結晶の大口径化に
よるルツボの大口径、大容量化に伴って、ヒーターも必
然的に大口径、長尺化するので、側壁部１１の重量を基
底部１２で支持することができない問題がある。[Problems to be Solved by the Invention] However, in the above-mentioned conventional single crystal manufacturing equipment equipped with a so-called doglegged heater, although the heat distribution at the lower end of the heater can be made flat to some extent, the side wall The portion 11 and the base portion 12 are supported by a cylindrical portion 14 in the center. Therefore, as the diameter and capacity of the crucible increases due to the increase in the diameter of the single crystal, the diameter and length of the heater also inevitably increase, so it is difficult to support the weight of the side wall 11 with the base 12. There is a problem that cannot be done.
そこで、本発明は、下端部の発熱分布をフラットにして
単結晶の大口径化に対処し得る単結晶製造装置の提供を
目的とする。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a single crystal manufacturing apparatus that can flatten the distribution of heat generation at the lower end and cope with increasing the diameter of the single crystal.
［課題を解決するための手段］
前記課題を解決するため、本発明は、単結晶の製造に用
いられるルツボを同軸的に取り囲む円筒状の発熱部と、
発熱部の一端部に一体又は一体的に設けられ、上記ルツ
ボの底部を遮蔽する円板状の遮蔽部とを具備するもので
ある。[Means for Solving the Problems] In order to solve the above problems, the present invention provides a cylindrical heat generating part that coaxially surrounds a crucible used for manufacturing a single crystal;
The crucible includes a disc-shaped shielding part that is provided integrally or integrally with one end of the heat generating part and shields the bottom of the crucible.
［作 用］
上記手段においては、発熱部による輻射熱はその下端部
からの放散が遮蔽部によって防止される一方、発熱部の
支持が遮蔽部の外周部で可能となる。[Function] In the above means, the radiation heat from the heat generating part is prevented from being dissipated from the lower end thereof by the shielding part, while the heat generating part can be supported by the outer peripheral part of the shielding part.
遮蔽部を発熱部と別個に形成する場合には、カーボンフ
ァイバー、成形断熱体等の断熱効果のある低熱伝導率の
ある材質によって形成することが好ましい。When the shielding section is formed separately from the heat generating section, it is preferably formed of a material with a heat insulating effect and low thermal conductivity, such as carbon fiber or a molded heat insulator.
［実施例コ 以下、本発明の実施例を図面と共に説明する。[Example code] Embodiments of the present invention will be described below with reference to the drawings.
第１図は第１実施例の単結晶製造装置の縦断面図である
。FIG. 1 is a longitudinal sectional view of a single crystal manufacturing apparatus according to a first embodiment.
図中１はカーボンルツボ２に収容されて５ｉｌｌ結晶の
製造に用いられる石英ガラスルツボ３を同軸的に取り囲
む円筒状の発熱部で、黒鉛からなる。発熱部１の一端部
（図においては下端部）には、上記ルツボ２，３の底部
を遮蔽する円板状の遮蔽部４が一体形成されている。In the figure, reference numeral 1 denotes a cylindrical heat-generating portion coaxially surrounding a quartz glass crucible 3 housed in a carbon crucible 2 and used for producing 5ill crystals, and is made of graphite. A disc-shaped shielding part 4 that shields the bottoms of the crucibles 2 and 3 is integrally formed at one end (lower end in the figure) of the heat generating part 1.
発熱部１は、軸方向の複数のスリット（図示せず）を設
けることにより、一連なりの抵抗発熱導体としての構造
を有しており、遮蔽部４の外周部に設けた電源接続部に
よりクランプ５を介して電極６と接続されている。The heat generating part 1 has a structure as a series of resistance heat generating conductors by providing a plurality of slits (not shown) in the axial direction, and is clamped by a power connection part provided on the outer periphery of the shielding part 4. It is connected to an electrode 6 via 5.
７はルツボ支持軸で、′ａ蔽郡部４中央に設けた孔８を
挿通している。Reference numeral 7 denotes a crucible support shaft, which is inserted through a hole 8 provided at the center of the cover section 4.
上記構成の装置においては、発熱部１による輻射熱は、
その下端部からの放散が遮蔽部４によって防止されるの
で、ヒーター下端部の発熱分布をフラットにすることが
できる。In the device with the above configuration, the radiant heat from the heat generating section 1 is
Since the radiation from the lower end is prevented by the shielding part 4, the heat generation distribution at the lower end of the heater can be made flat.
又、発熱部１の支持が遮蔽部の外周部で可能となるので
、単結晶の大口径化に対処することができる。Furthermore, since the heat generating part 1 can be supported at the outer periphery of the shielding part, it is possible to cope with an increase in the diameter of the single crystal.
なお、上記実施例では、発熱部１と遮蔽部４とを一体形
成する場合について説明したが、これに限らず例えば両
部を組み立て式（カーボンのボルトによる嵌め込み式）
としてもよく、このようにすることにより、カーボンブ
ロックを効率よく使用できる。In the above embodiment, the case where the heat generating part 1 and the shielding part 4 are integrally formed has been described, but the invention is not limited to this, and for example, both parts may be assembled (inserted with carbon bolts).
By doing so, the carbon block can be used efficiently.
第２図は第２実施例の単結晶製造装置の縦断面図である
。FIG. 2 is a longitudinal cross-sectional view of the single crystal manufacturing apparatus of the second embodiment.
この実施例の装置は、それぞれ別個に形成された黒鉛か
らなる発熱部１′と、断熱効果のある低熱伝導率のカー
ボンファイバーや成形断熱体等からなる遮蔽部４′とを
一体的に設けたものである。他の構成は、第１実施例の
ものと同様であるので、同一の構成部材等には同一の符
号を付してその説明を省略する。The device of this embodiment has a heat generating part 1' made of graphite which is formed separately, and a shielding part 4' made of carbon fiber having a heat insulating effect and a molded heat insulating material with low thermal conductivity, etc., which are integrally provided. It is something. Since the other configurations are the same as those of the first embodiment, the same components are given the same reference numerals and their explanations will be omitted.
従って、第２実施例の装置によれば、第１実施例のもの
よりヒーター下端部の発熱分布を一層フラットにするこ
とができる。Therefore, according to the device of the second embodiment, the heat generation distribution at the lower end of the heater can be made even flatter than that of the first embodiment.
第３図は第３実施例の単結晶製造装置の半裁縦断面図で
ある。FIG. 3 is a half-cut vertical cross-sectional view of a single crystal manufacturing apparatus according to a third embodiment.
この実施例の装置は、ヒーター上端部の発熱分布をフラ
ットにするため、発熱部１′の内周面上部を断面三角形
状に切り欠いてテーパ一部９を設け、この部分における
電気抵抗を増加して発熱量を増やすようにしたものであ
る。。他の構成は、第２実施例のものと同様であるので
、同一・の構成部材等には同一の符号を付してその説明
を省略する。In the device of this embodiment, in order to flatten the heat generation distribution at the upper end of the heater, the upper part of the inner circumferential surface of the heat generating part 1' is cut out to have a triangular cross section and a tapered part 9 is provided to increase the electrical resistance in this part. This is to increase the amount of heat generated. . Since the other configurations are the same as those of the second embodiment, the same constituent members and the like are given the same reference numerals and the explanation thereof will be omitted.
従って、第３実施例の装置によれば、第２実施例のもの
の作用効果に加え、ヒーター上端部の発熱分布をフラッ
トにすることができる。Therefore, according to the device of the third embodiment, in addition to the effects of the device of the second embodiment, the heat generation distribution at the upper end of the heater can be made flat.
［発明の効果］
以上のように本発明によれば、発熱部による輻射熱は、
その下端部からの放散が遮蔽部によって防止されるので
、ヒーター下端部の発熱分布をフラットにすることがで
きると共に、発熱部の支持が遮蔽部の外周部で可能とな
るので、単結晶の大口径化に対処することができる。[Effects of the Invention] As described above, according to the present invention, the radiant heat from the heat generating part is
Since dissipation from the lower end of the heater is prevented by the shielding part, the heat generation distribution at the lower end of the heater can be flattened, and the heat generating part can be supported at the outer periphery of the shielding part, making it possible to increase the size of the single crystal. Can deal with caliber.
第１図及び第２図は第１実施例及び第２実施例の単結晶
製造装置の縦断面図、第３図は第３実施例の単結晶製造
装置の半裁縦断面図、第４図は従来の単結晶製造装置の
縦断面図である。
１．１′・・・発熱部 ２・・・カーボンルツボ
３・・・石英ガラスルツボ ４・・・遮蔽部第
図
第
図1 and 2 are longitudinal sectional views of the single crystal manufacturing apparatuses of the first and second embodiments, FIG. 3 is a half-cut vertical sectional view of the single crystal manufacturing apparatus of the third embodiment, and FIG. 4 is a vertical sectional view of the single crystal manufacturing apparatus of the third embodiment. FIG. 2 is a vertical cross-sectional view of a conventional single crystal manufacturing apparatus. 1.1'... Heat generating part 2... Carbon crucible 3... Quartz glass crucible 4... Shielding part Fig.
Claims (1)
囲む円筒状の発熱部と、発熱部の一端部に一体又は一体
的に設けられ、上記ルツボの底部を遮蔽する円板状の遮
蔽部とを具備することを特徴とする単結晶製造装置。(1) A cylindrical heat-generating part that coaxially surrounds a crucible used for manufacturing single crystals, and a disc-shaped shielding part that is provided integrally or integrally with one end of the heat-generating part and that shields the bottom of the crucible. A single crystal manufacturing device comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17146889A JPH0337185A (en) | 1989-07-03 | 1989-07-03 | Apparatus for producing single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17146889A JPH0337185A (en) | 1989-07-03 | 1989-07-03 | Apparatus for producing single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0337185A true JPH0337185A (en) | 1991-02-18 |
Family
ID=15923668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17146889A Pending JPH0337185A (en) | 1989-07-03 | 1989-07-03 | Apparatus for producing single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0337185A (en) |
-
1989
- 1989-07-03 JP JP17146889A patent/JPH0337185A/en active Pending
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