JPH0336340B2 - - Google Patents
Info
- Publication number
- JPH0336340B2 JPH0336340B2 JP58055703A JP5570383A JPH0336340B2 JP H0336340 B2 JPH0336340 B2 JP H0336340B2 JP 58055703 A JP58055703 A JP 58055703A JP 5570383 A JP5570383 A JP 5570383A JP H0336340 B2 JPH0336340 B2 JP H0336340B2
- Authority
- JP
- Japan
- Prior art keywords
- high frequency
- transformer
- circuit
- frequency
- coil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003990 capacitor Substances 0.000 claims description 5
- 230000004907 flux Effects 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 description 12
- 230000005540 biological transmission Effects 0.000 description 7
- 238000005481 NMR spectroscopy Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000002265 prevention Effects 0.000 description 2
- 241000252233 Cyprinus carpio Species 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000013642 negative control Substances 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
Landscapes
- Electronic Switches (AREA)
Description
【発明の詳細な説明】
本発明はパルスNMR装置などで単一のコイル
を使用して高周波の送受信を行なう場合に必要な
高周波スイツチング回路の改良に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a high frequency switching circuit necessary for transmitting and receiving high frequency waves using a single coil in a pulsed NMR apparatus or the like.
核磁気共鳴（NMR）は、原子核の磁気的性質
を用いて、化学的情報を得る方法である。つま
り、静磁場中の原子核を、高周波エネルギーで励
起すると、共鳴現象によつて発生する共鳴信号
（以下NMR信号と呼ぶ）からその原子の密度や、
まわりとの結合状態を知ることができる。この原
理を用いたNMR装置は、解剖学的情報と機能的
情報を与える診断装置として最近注目されている
ものである。 Nuclear magnetic resonance (NMR) is a method of obtaining chemical information using the magnetic properties of atomic nuclei. In other words, when an atomic nucleus in a static magnetic field is excited with high-frequency energy, the density of the atom can be determined from the resonance signal (hereinafter referred to as NMR signal) generated by the resonance phenomenon.
You can know the state of connection with the surroundings. NMR devices using this principle have recently attracted attention as diagnostic devices that provide anatomical and functional information.
パルスNMR装置などで、単一のコイルを使用
して高周波の送受信を行なう場合に第１図に示す
ような高周波スイツチング回路１が必要となる。
すなわち送信モードのときには高周波スイツチン
グ回路１は高周波接続回路２と送受信コイル３と
の間をオンとし（図の状態）、送受信コイル３か
らは第２図Ａに示すようなパルス状の送信出力を
発生する。送信出力発生後受信モードとなると高
周波スイツチング回路１は送受信コイル３と高周
波受信回路４とを接続するように切換えられ、第
２図Ｂに示すような微小な検出出力が高周波受信
回路４に加えられる。 When transmitting and receiving high frequency waves using a single coil in a pulse NMR device or the like, a high frequency switching circuit 1 as shown in FIG. 1 is required.
That is, in the transmission mode, the high-frequency switching circuit 1 turns on the connection between the high-frequency connection circuit 2 and the transmitting/receiving coil 3 (the state shown in the figure), and the transmitting/receiving coil 3 generates a pulse-shaped transmitting output as shown in FIG. 2A. do. When the receiving mode is entered after the transmission output is generated, the high frequency switching circuit 1 is switched to connect the transmitting/receiving coil 3 and the high frequency receiving circuit 4, and a minute detection output as shown in FIG. 2B is applied to the high frequency receiving circuit 4. .
上記のような高周波スイツチング回路の従来例
として４分の１波長（λ／４）線路を用いたもの
を第３図に示す。このような構造の回路において
送信機からの高周波パワー出力が入力端子５に加
わると、ダイオードＤ１，Ｄ２，Ｄ３，４Ｄはオ
ンとなる。したがつて４分の１波長線路の性質か
ら、点Ａから出力端子６の方を見たときのインピ
ーダンスはほぼ無限大となり、点Ａからコイル３
を見たときのインピーダンスは有限になる。この
結果マツチングをとれば、送信機からの送信パワ
ーの大半は送受信コイル３に加えられる。受信モ
ードでは送受信コイル３からの検出出力は微小信
号なのでダイオードの順方向電圧よりも小さく、
ダイオードＤ１〜Ｄ４はオフとなる。この結果送
受信コイ３からの検出出力は出力端子６を介して
受信回路に送られる。 FIG. 3 shows a conventional example of the above-mentioned high frequency switching circuit using a quarter wavelength (λ/4) line. In a circuit having such a structure, when a high frequency power output from the transmitter is applied to the input terminal 5, the diodes D1, D2, D3, and 4D are turned on. Therefore, due to the properties of the quarter-wavelength line, the impedance when looking from point A toward output terminal 6 is almost infinite, and the impedance from point A to coil 3 is almost infinite.
When looking at , the impedance is finite. As a result, if matching is achieved, most of the transmission power from the transmitter is applied to the transmitter/receiver coil 3. In reception mode, the detection output from the transmitter/receiver coil 3 is a minute signal, so it is smaller than the forward voltage of the diode.
Diodes D1-D4 are turned off. As a result, the detection output from the transmitting/receiving carp 3 is sent to the receiving circuit via the output terminal 6.
上記のような回路の場合には周波数が低くなる
につれて４分の１波長（λ／４）線路が長くなり
広い回路スペースが必要になるという欠点があ
る。また単一の周波数に対してのみ正常動作し、
周波数が変化すると動作不良となるなどの欠点が
ある。この他、種々の形式の高周波スイツチング
回路があるが、高周波送信パワーや誘起電圧の損
失の少ないことが要求されている。 The above circuit has the drawback that as the frequency decreases, the quarter wavelength (λ/4) line becomes longer and a larger circuit space is required. Also, it operates normally only for a single frequency,
It has drawbacks such as malfunction when the frequency changes. In addition, there are various types of high frequency switching circuits, but they are required to have low loss of high frequency transmission power and induced voltage.
本発明は上記の問題点を解消するためになされ
たもので、回路スペースを必要とせず広い周波数
帯で動作し、損失の少ない高周波スイツチング回
路を実現することを目的とする。 The present invention has been made to solve the above problems, and an object of the present invention is to realize a high frequency switching circuit that does not require circuit space, operates in a wide frequency band, and has low loss.
本発明によれば、入力端子に入力した高周波信
号を制御入力端子に入力する制御信号によりスイ
ツチングして出力端子から出力する高周波スイツ
チング回路において、
入力端子に一端が接続し出力端子に他端が接続
する１次コイルおよびこの１次コイルと密結合す
る２次コイルを具備したトランスと、
このトランスの前記２次コイルの両端子にそれ
ぞれ一方の極が少なくとも高周波的に結合すると
ともに他方の極同士が接続する２つのダイオード
と、
このダイオードの前記一方の極とコモンの間に
接続する第１の高周波チヨークと、
前記ダイオードの他方の極と制御入力端子の間
に接続する第２の高周波チヨークとを備え、
制御入力端子に印加される制御電流のオンオフ
によりトランスの１次コイルを通る高周波信号を
通過または遮断するように構成することにより、
上記の目的を達成することができる。 According to the present invention, in a high frequency switching circuit that switches a high frequency signal input to an input terminal by a control signal input to a control input terminal and outputs the signal from an output terminal, one end is connected to the input terminal and the other end is connected to the output terminal. A transformer is provided with a primary coil and a secondary coil closely coupled to the primary coil, one pole of which is coupled to both terminals of the secondary coil of the transformer at least in a high frequency manner, and the other poles of the transformer are coupled to each other at least in a high frequency manner. two diodes to be connected; a first high-frequency circuit connected between the one pole of the diode and a common; and a second high-frequency circuit connected between the other pole of the diode and a control input terminal. By configuring the transformer to pass or block the high frequency signal passing through the primary coil of the transformer by turning on and off the control current applied to the control input terminal,
The above objectives can be achieved.
以下図面にもとづいて本発明を説明する。 The present invention will be explained below based on the drawings.
第４は本発明に係る高周波スイツチング回路の
一実施例を示す回路構成図である。高周波スイツ
チング回路１１において、１２は送信機からの高
周波送信出力が加えられる高周波入力端子、Ｄ
１，Ｄ２はこの高周波入力端子１２にそれぞれそ
の一端が接続するとともに互に逆並列接続するダ
イオード、１４はこの逆並列接続ダイオードＤ
１，Ｄ２の他端に接続する送受信コイル用の入出
力端子、１６は高周波スイツチング回路の要部、
Ｔ１はその一次コイルＬ１の一端が前記逆並列ダ
イオードＤ１，Ｄ２の他端に接続する密結合のト
ランス、Ｄ３，Ｄ４はこのトランスＴ１の前記１
次コイルＬ１の他端がその一端に接続するととも
にその他端がコモンに接続する逆並列接続ダイオ
ード、１５はこの逆並列ダイオードの前記一端が
接続し、検出信号を受信回路へ出力する検出信号
出力端子、１３は制御電流Icが加えられる制御入
力端子、Ｌ５はこの制御入力端子１３にその一端
が接続するインダクタンスまたは高周波チヨー
ク、Ｄ５，Ｄ６はこの高周波チヨークＬ５の他端
にその一端（ここではアノード側）が接続するダ
イオード、Ｌ３，Ｌ４はその一端がこのダイオー
ドＤ５，Ｄ６の他端（ここではカソード側）にそ
れぞれ接続しその他端がコモンに接続するインダ
クタンスまたは高周波チヨーク、Ｃ１，Ｃ２はそ
の一端が前記ダイオードＤ５，Ｄ６の前記他端に
それぞれ接続しその他端が前記トランスＴ１の２
次コイルＬ２の両端にそれぞれ接続して誘起電流
防止手段を形成する、高周波に対して低インピー
ダンスのキヤパシタである。 The fourth is a circuit configuration diagram showing an embodiment of the high frequency switching circuit according to the present invention. In the high frequency switching circuit 11, 12 is a high frequency input terminal to which the high frequency transmission output from the transmitter is applied;
1 and D2 are diodes each having one end connected to this high frequency input terminal 12 and connected in antiparallel to each other, and 14 is this antiparallel connection diode D.
1, input/output terminal for the transmitting/receiving coil connected to the other end of D2; 16 is the main part of the high frequency switching circuit;
T1 is a close-coupled transformer in which one end of the primary coil L1 is connected to the other ends of the anti-parallel diodes D1 and D2, and D3 and D4 are the first and second ends of the transformer T1.
An antiparallel connected diode to which the other end of the next coil L1 is connected to one end and the other end is connected to a common, and 15 is a detection signal output terminal to which the one end of this antiparallel diode is connected and outputs a detection signal to the receiving circuit. , 13 is a control input terminal to which a control current I c is applied, L5 is an inductance or high-frequency circuit whose one end is connected to this control input terminal 13, and D5 and D6 are connected to the other end of this high-frequency circuit L5 at one end (here, an anode). L3 and L4 are inductances or high-frequency circuits whose one end is connected to the other end (cathode side in this case) of diodes D5 and D6, respectively, and the other end is connected to common, and C1 and C2 are the one ends are connected to the other ends of the diodes D5 and D6, respectively, and the other end is connected to the second end of the transformer T1.
These are capacitors with low impedance against high frequencies, which are connected to both ends of the secondary coil L2 to form induced current prevention means.
上記のような構成の回路の動作を以下に説明す
る。送信モードで２次側回路において制御電流Ic
が０となると、ダイオードＤ５，Ｄ６はオフとな
る。このとき１次側回路において送信機からの高
周波パワー出力が高周波入力端子１２に加えられ
ると、ダイオードＤ１，Ｄ２はオンとなる。一方
トランスＴ１の２次コイルＬ２を含む２次側回路
において、高周波チヨークＬ３，Ｌ４は高周波で
高インピーダンスを示すので、２次コイルＬ２の
両端は高周波的にはオブン状態となり、１次コイ
ルＬ１は高インピーダンスの高周波チヨークとし
て働く。この結果１次側回路において、高周波入
力端子１２と検出信号出力端子１５の間の径路は
オフ、高周波入力端子１２と送受信コイル用入出
力端子１４との間の径路はオンとなり、送信回路
からの高周波パワー出力はほぼ全て送受信コイル
へ供給される。受信モードで制御電流IcがIp（正の
電流）となるとIpは高周波チヨークＬ５→高周波
チヨークＬ３→コモンの径路でダイオードＤ５を
オンとし、高周波チヨークＬ５→高周波チヨーク
Ｌ４→コモンの径路でダイオードＤ６をオンにす
る。この結果トランスＴ１の２次コイルＬ２はそ
の両端がキヤパシタＣ１，Ｃ２を介して高周波的
にシヨートした状態となり、１次コイルＬ１のイ
ンピーダンスを高周波的に極めて低い値に低下さ
せることができ、この状態で送受信コイルからの
微小検出信号が入出力端子１４に加えられると、
高周波入力端子１２への径路はダイオードＤ１，
Ｄ３によつてブロツクされ、オン状態となつてい
る検出信号出力端子１５への径路を経て受信回路
へ出力される。なおこのとき逆並列接続されたダ
イオードＤ３，Ｄ４は微小検出信号に対してオフ
となる。このように第４図の高周波スイツチング
回路のオンオフは、制御電流をオンオフすること
で制御することができる。この場合に２次コイル
Ｌ２には制御電流Icは流れないので、制御電流Ic
のオンオフによつてトランスＴ１の１次コイルＬ
１に誘起電流が発生し、検出信号の誤差となるこ
とはない。また２次側回路全体は高周波チヨーク
Ｌ３，Ｌ４，Ｌ５によつてコモンから高周波的に
浮いているので、トランスＴ１の１次コイルＬ１
と密結合している２次コイルＬ２の間の浮遊容量
により検出信号出力端子１５からの検出信号出力
が小さくなつてしまうこともない。 The operation of the circuit configured as above will be explained below. Control current I c in the secondary circuit in transmission mode
When becomes 0, diodes D5 and D6 are turned off. At this time, when the high frequency power output from the transmitter is applied to the high frequency input terminal 12 in the primary circuit, the diodes D1 and D2 are turned on. On the other hand, in the secondary circuit including the secondary coil L2 of the transformer T1, the high-frequency chokes L3 and L4 exhibit high impedance at high frequencies, so both ends of the secondary coil L2 are in an open state at high frequencies, and the primary coil L1 Acts as a high impedance high frequency choke. As a result, in the primary circuit, the path between the high frequency input terminal 12 and the detection signal output terminal 15 is turned off, and the path between the high frequency input terminal 12 and the transmitting/receiving coil input/output terminal 14 is turned on, and the path from the transmitting circuit is turned off. Almost all of the high frequency power output is supplied to the transmitting and receiving coils. When the control current I c becomes I p (positive current) in the receive mode, I p turns on the diode D5 in the path of high frequency chain L5 → high frequency chain Yoke L3 → common, and turns on the diode D5 in the path of high frequency chain Yoke L5 → high frequency chain Yoke L4 → common. Turn on diode D6. As a result, both ends of the secondary coil L2 of the transformer T1 are shot at high frequency through the capacitors C1 and C2, and the impedance of the primary coil L1 can be reduced to an extremely low value at high frequency. When a minute detection signal from the transmitter/receiver coil is applied to the input/output terminal 14,
The path to the high frequency input terminal 12 is a diode D1,
The signal is blocked by D3 and output to the receiving circuit via a path to the detection signal output terminal 15 which is in an on state. Note that at this time, the diodes D3 and D4 connected in antiparallel are turned off in response to the minute detection signal. In this way, the high frequency switching circuit shown in FIG. 4 can be turned on and off by turning on and off the control current. In this case, since the control current I c does not flow through the secondary coil L2, the control current I c
The primary coil L of the transformer T1 is turned on and off by
An induced current is generated in 1, which does not cause an error in the detection signal. In addition, the entire secondary circuit is floating from the common in terms of high frequency by the high frequency yokes L3, L4, and L5, so the primary coil L1 of the transformer T1
The detection signal output from the detection signal output terminal 15 will not be reduced due to stray capacitance between the secondary coil L2 and the secondary coil L2 which are tightly coupled.
なお、ダイオードＤ５，Ｄ６の極性を逆向きに
して負の制御電流Icを用いることもできる。 Note that it is also possible to use a negative control current I c by reversing the polarities of the diodes D5 and D6.
また、ダイオードＤ５，Ｄ６および高周波チヨ
ークＬ３，Ｌ４として特性の揃つたものを使用す
れば、２次コイルＬ２に制御電流は流れないの
で、キヤパシタＣ１，Ｃ２を省略することができ
る。 Furthermore, if diodes D5, D6 and high-frequency chokes L3, L4 having the same characteristics are used, no control current flows through the secondary coil L2, so that the capacitors C1, C2 can be omitted.
第５図は本発明の第２の実施例を示す要部回路
図で第４図の高周波スイツチング回路の要部１６
の変形を示している。Ｔ２は１次コイルＬ１１と
密結合する２つの２次コイルＬ１２，Ｌ１３を有
するトランス、Ｌ５はその一端が前記２次コイル
Ｌ１３の一端に接続する高周波チヨーク、Ｄ９は
その一端（ここではアノード端子）がこの２次コ
イルＬ１３の他端に接続するダイオード、Ｄ１０
はその一端（ここではアノード端子）が前記高周
波チヨークＬ５の前記一端に接続しその他端が前
記ダイオードＤ９の他端と接続するダイオード、
Ｄ７，Ｄ８はその一端（ここではアノード端子）
が前記ダイオードＤ９，Ｄ１０の前記他端に接続
し他端が前記２次コイルＬ１２の両端にそれぞれ
接続するダイオード、Ｌ１４はその一端が前記ダ
イオードＤ８の他端に接続しその他端がコモンに
接続する高周波チヨークである。 FIG. 5 is a main part circuit diagram showing a second embodiment of the present invention, and shows the main part 16 of the high frequency switching circuit shown in FIG.
It shows the deformation of. T2 is a transformer having two secondary coils L12 and L13 that are tightly coupled to the primary coil L11, L5 is a high frequency choke whose one end is connected to one end of the secondary coil L13, and D9 is one end thereof (an anode terminal here). is the diode D10 connected to the other end of this secondary coil L13.
is a diode whose one end (here, the anode terminal) is connected to the one end of the high frequency choke L5 and whose other end is connected to the other end of the diode D9;
D7 and D8 are one end (anode terminal here)
is a diode connected to the other ends of the diodes D9 and D10, and the other end is connected to both ends of the secondary coil L12, respectively.One end of L14 is connected to the other end of the diode D8, and the other end is connected to the common. It is a high frequency chiyoke.
上記のような構成の高周波スイツチング回路の
動作を次に述べる。送信モードで２次側回路にお
いて制御電流Icが０のときはダイオードＤ７〜Ｄ
１０はオフとなり２次コイルＬ１２，Ｌ１３の両
端はオーブンとなり第４図の場合と同様に１次側
回路の１次コイルＬ１１は高周波チヨークとして
動作する。受信モードで制御電流IcがIp（正の電
流）となると、ダイオードＤ７〜Ｄ１０はオンと
なり、２次コイルＬ１２，Ｌ１３の両端はシヨー
トされた状態となり、第４図の場合と同様１次コ
イルＬ１１は高周波的に極めて低インピーダンス
となる。２次コイルＬ１２，Ｌ１３には同一制御
電流が流されかつその発生する磁束が互いにキヤ
ンセルする方向となるように接続されているの
で、第４図の場合と同様制御電流Icのオンオフに
より１次コイルに電流は誘起しないという利点が
ある。すなわち、２つの２次コイルＬ１２，Ｌ１
３を用いることにより誘起電流防止手段を形成し
ている。また２次側回路全体が高周波チヨークＬ
１４，Ｌ１５によつて高周波的にコモンから浮い
ているので、トランスＴ２の１次コイル２次コイ
ル間の浮遊容量による悪影響がない点も第４図の
場合と同様である。 The operation of the high frequency switching circuit configured as described above will be described next. When the control current I c is 0 in the secondary circuit in transmission mode, the diodes D7 to D
10 is turned off, both ends of the secondary coils L12 and L13 become ovens, and the primary coil L11 of the primary side circuit operates as a high frequency choke, as in the case of FIG. When the control current I c becomes I p (positive current) in the reception mode, the diodes D7 to D10 are turned on, and both ends of the secondary coils L12 and L13 are in the shorted state, and the primary The coil L11 has extremely low impedance at high frequencies. The secondary coils L12 and L13 are connected in such a way that the same control current is passed through them and the magnetic fluxes generated by the coils cancel each other, so that the primary coil is turned on and off by turning on and off the control current Ic , as in the case of Fig. 4. It has the advantage that no current is induced in the coil. That is, the two secondary coils L12, L1
3 forms an induced current prevention means. In addition, the entire secondary circuit is a high frequency choke L.
14 and L15 from the common in terms of high frequency, there is no adverse effect due to stray capacitance between the primary coil and the secondary coil of the transformer T2, which is the same as in the case of FIG.
以上述べたように本発明によれば、回路スペー
スを必要とせず、広い周波数帯で動作し、損失の
少ない高周波スイツチング回路を簡単な構成で実
現できる。 As described above, according to the present invention, a high frequency switching circuit that does not require circuit space, operates in a wide frequency band, and has low loss can be realized with a simple configuration.
またトランス１個を用いて高周波スイツチ回路
を構成することができ、トランスの１次側から２
次側へ信号が通過しないので、小形化が容易であ
る。 In addition, a high frequency switch circuit can be constructed using one transformer, and from the primary side of the transformer to the
Since the signal does not pass to the next side, miniaturization is easy.
第１図、第２図は高周波スイツチングの原理を
示す原理説明図、第３図は高周波スイツチング回
路の従来例を示す回路構成図、第４図は本発明の
第１の実施例を示す回路構成図、第５図は本発明
の第２の実施例を示す要部回路図である。
１，１１……高周波スイツチング回路、１３…
…制御入力端子、１４……入力端子、１５……出
力端子、Ic……制御電流、Ｔ１，Ｔ２……トラン
ス、Ｌ２，Ｌ１２，Ｌ１３……２次コイル、Ｄ５
〜Ｄ１０……ダイオード、Ｌ３〜Ｌ５，Ｌ１４…
…高周波チヨーク、Ｌ１，Ｌ１１……１次コイ
ル、Ｃ１，Ｃ２……キヤパシタ。
Figures 1 and 2 are principle explanatory diagrams showing the principle of high frequency switching, Figure 3 is a circuit diagram showing a conventional example of a high frequency switching circuit, and Figure 4 is a circuit diagram showing a first embodiment of the present invention. 5 are principal part circuit diagrams showing a second embodiment of the present invention. 1, 11...High frequency switching circuit, 13...
... Control input terminal, 14 ... Input terminal, 15 ... Output terminal, I c ... Control current, T1, T2 ... Transformer, L2, L12, L13 ... Secondary coil, D5
~D10...Diode, L3~L5, L14...
...High frequency choke, L1, L11...Primary coil, C1, C2...Capacitor.
Claims (1)
子に入力する制御信号によりスイツチングして出
力端子から出力する高周波スイツチング回路にお
いて、 入力端子に一端が接続し出力端子に他端が接続
する１次コイルおよびこの１次コイルと密結合す
る２次コイルを具備したトランスと、 このトランスの前記２次コイルの両端子にそれ
ぞれ一方の極が少なくとも高周波的に結合すると
ともに他方の極同士が接続する２つのダイオード
と、 このダイオードの前記一方の極とコモンの間に
接続する第１の高周波チヨークと、 前記ダイオードの前記他方の極と制御入力端子
の間に接続する第２の高周波チヨークとを備え、 制御入力端子に印加される制御電流のオンオフ
によりトランスの１次コイルを通る高周波信号を
通過または遮断するように構成したことを特徴と
する高周波スイツチング回路。 ２ ２次コイル端子と２つのダイオードの一方の
極の間に高周波結合手段としてそれぞれキヤパシ
タを接続した特許請求の範囲第１項記載の高周波
スイツチング回路。 ３ 制御電流のオンオフによりトランスの２次コ
イルに発生する磁束を打消すような磁束を前記制
御電流によつて発生する他の２次コイルを前記ト
ランス内に有する特許請求の範囲第１項記載の高
周波スイツチング回路。[Claims] 1. In a high-frequency switching circuit that switches a high-frequency signal input to an input terminal using a control signal input to a control input terminal and outputs the signal from an output terminal, one end is connected to the input terminal and the other end is connected to the output terminal. A transformer comprising a primary coil to be connected and a secondary coil tightly coupled to the primary coil, one pole of which is coupled to both terminals of the secondary coil of the transformer at least in a high frequency manner, and the other poles are coupled to each other. two diodes connected to each other; a first high-frequency circuit connected between the one pole of the diode and a common; and a second high-frequency circuit connected between the other pole of the diode and a control input terminal. A high-frequency switching circuit comprising: a high-frequency switching circuit configured to pass or block a high-frequency signal passing through a primary coil of a transformer by turning on and off a control current applied to a control input terminal. 2. The high frequency switching circuit according to claim 1, wherein capacitors are connected as high frequency coupling means between the secondary coil terminal and one pole of the two diodes. 3. The transformer according to claim 1, wherein the transformer includes another secondary coil that generates magnetic flux by the control current that cancels the magnetic flux generated in the secondary coil of the transformer when the control current is turned on and off. High frequency switching circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58055703A JPS59181827A (en) | 1983-03-31 | 1983-03-31 | High frequency switching circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58055703A JPS59181827A (en) | 1983-03-31 | 1983-03-31 | High frequency switching circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59181827A JPS59181827A (en) | 1984-10-16 |
| JPH0336340B2 true JPH0336340B2 (en) | 1991-05-31 |
Family
ID=13006243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58055703A Granted JPS59181827A (en) | 1983-03-31 | 1983-03-31 | High frequency switching circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59181827A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4938423B2 (en) * | 2006-11-24 | 2012-05-23 | 株式会社日立製作所 | Nuclear magnetic resonance probe |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4925803U (en) * | 1972-06-06 | 1974-03-05 |
-
1983
- 1983-03-31 JP JP58055703A patent/JPS59181827A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4925803U (en) * | 1972-06-06 | 1974-03-05 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59181827A (en) | 1984-10-16 |
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