JPH0330853B2 - - Google Patents
Info
- Publication number
- JPH0330853B2 JPH0330853B2 JP57153981A JP15398182A JPH0330853B2 JP H0330853 B2 JPH0330853 B2 JP H0330853B2 JP 57153981 A JP57153981 A JP 57153981A JP 15398182 A JP15398182 A JP 15398182A JP H0330853 B2 JPH0330853 B2 JP H0330853B2
- Authority
- JP
- Japan
- Prior art keywords
- photoreceptor
- phthalocyanine
- chlorine
- gallium
- charge generation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 108091008695 photoreceptors Proteins 0.000 claims description 33
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052801 chlorine Inorganic materials 0.000 claims description 9
- 239000000460 chlorine Substances 0.000 claims description 9
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 15
- 230000035945 sensitivity Effects 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 230000003595 spectral effect Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 7
- 239000011669 selenium Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000000862 absorption spectrum Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- XJYCALFJFALYAH-UHFFFAOYSA-N 4-[[2-chloro-4-[3-chloro-4-[[2-hydroxy-3-(phenylcarbamoyl)naphthalen-1-yl]diazenyl]phenyl]phenyl]diazenyl]-3-hydroxy-N-phenylnaphthalene-2-carboxamide Chemical compound OC1=C(N=NC2=CC=C(C=C2Cl)C2=CC(Cl)=C(C=C2)N=NC2=C(O)C(=CC3=C2C=CC=C3)C(=O)NC2=CC=CC=C2)C2=C(C=CC=C2)C=C1C(=O)NC1=CC=CC=C1 XJYCALFJFALYAH-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 150000003219 pyrazolines Chemical class 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/06—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being organic
Description
【発明の詳細な説明】
本発明は電子写真用感光体に関するものであ
り、特に物理的特性に優れ、かつ800nｍ前後の
長歯長光に対し高感度を有する感光体を提供しよ
うとするものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photoreceptor for electrophotography, and in particular, it is an object of the present invention to provide a photoreceptor that has excellent physical properties and is highly sensitive to long-toothed long light of around 800 nm. be.
従来の電子写真用感光体としては、例えば第１
図の如くアルミニウム等の導電性基板１１の上に
50μｍ程度のセレンSe膜１２を真空蒸着法により
形成したものがある。しかしこの場合のアルミニ
ウム蒸着は約１時間を要すること及びこのSe感
光体は波長500nｍ付近までしか感度を有してい
ない等の問題がある。またこの第２図に示すよう
に、導電性基板２１の上に50μｍ程度のSe層２を
形成し、この上に更に数μｍのセレン−テルル
（Se−Te）合金層２３を形成した感光体があるが
この感光体は上記Se−Te合金のTeの含有率が高
い程分光感度が長波長にまで伸びる反面、Teの
添加量が増加するにつれて表面電荷の保持特性が
不良となり事実上感光体として使用できなくなる
重大な問題がある。第６図には後記詳述する如
く、アルミニウム基板上に50μｍ厚のSe層を形成
し、この上に、Seが85mol％、Teが15mol％の
3μｍのSe−Te合金を形成した積層感光体の分光
感度を例示したが、この場合、Te添加量は、概
ねこの程度の量が限度であつて、しかもこの感光
体は700nｍ付近までしか感度を有していない
（曲線C′）。 As a conventional electrophotographic photoreceptor, for example, the first
As shown in the figure, on a conductive substrate 11 made of aluminum etc.
There is one in which a selenium Se film 12 of about 50 μm is formed by vacuum evaporation. However, there are problems in this case, such as that aluminum vapor deposition requires about one hour and that this Se photoreceptor has sensitivity only up to a wavelength of around 500 nm. Further, as shown in FIG. 2, a photoreceptor is formed by forming a Se layer 2 of about 50 μm on a conductive substrate 21, and on top of this a selenium-tellurium (Se-Te) alloy layer 23 of several μm. However, in this photoreceptor, the higher the Te content in the Se-Te alloy mentioned above, the greater the spectral sensitivity extends to longer wavelengths, but as the amount of Te added increases, the surface charge retention properties deteriorate, effectively making the photoreceptor There is a serious problem that makes it unusable. As will be described in detail later, in Fig. 6, a 50 μm thick Se layer is formed on an aluminum substrate, and on top of this, 85 mol% Se and 15 mol% Te are added.
The spectral sensitivity of a laminated photoreceptor made of a 3μm Se-Te alloy is shown as an example, but in this case, the amount of Te added is generally limited to this amount, and this photoreceptor has sensitivity only up to around 700nm. (curve C′).
更に別に第３図に示すように、アルミニウム基
板３１上に1μｍ程度のクロロジアンブルーまた
はスクウアリリウム酸誘導体をコーテイングして
電荷発生層３２を形成し、この上に絶縁抵抗の高
いポイビニルカルバゾールまたはピラゾリン誘導
体とポリカーボネート樹脂との混合物を10〜20μ
ｍコーテイングして電荷輸送層３３を形成した所
謂機能分離型の感光体もある。しかしかかる機能
分離型感光体の分光感度特性は、上記電荷発生層
の特性で決定されるが、現在この感光体は700n
ｍ以上の光に対して感度を有していないのが実状
である。 Furthermore, as shown in FIG. 3, a charge generation layer 32 is formed by coating an aluminum substrate 31 with approximately 1 μm of chlorodiane blue or a squarylic acid derivative, and on this is coated with a polyvinylcarbazole or pyrazoline derivative having high insulation resistance. and a mixture of polycarbonate resin and 10~20μ
There is also a so-called functionally separated type photoreceptor in which a charge transport layer 33 is formed by m-coating. However, the spectral sensitivity characteristics of such functionally separated photoreceptors are determined by the characteristics of the charge generation layer, and currently this photoreceptor has a 700 nm
The reality is that they are not sensitive to light of wavelengths greater than m.
近年レーザー光を光源とし、電子写真用感光体
を用いたレーザービームプリンタ等では、半導体
レーザーを光源に用いることが種々試みられてお
り、この場合該光源の波長は800nｍ前後である
ことから800nｍ前後の長波長光に対し高感度な
特性を有する感光体が強く要求されている。 In recent years, various attempts have been made to use semiconductor lasers as light sources in laser beam printers that use laser light as a light source and electrophotographic photoreceptors, and in this case, the wavelength of the light source is around 800 nm. There is a strong demand for a photoreceptor that is highly sensitive to long wavelength light.
ここに本発明者等は、上記の点に鑑み検討を重
ねた結果中心金属がガリウムで該ガリウムには塩
素が結合し更にフタロシアニン環の周囲のベンゼ
ン環の水素の一部分が塩素で置換されているフタ
ロシアニンを用い、その蒸着膜を溶媒蒸気処理し
てなる電荷発生体とした機能分離型感光体が、上
述の波長800nｍ前後の光に対して、高感度を有
し、しかも該感光体が安価に作成することが可能
である等の知見を得、この発明に到達したのであ
る。 The inventors of the present invention, after repeated studies in view of the above points, found that the central metal is gallium, chlorine is bonded to the gallium, and a portion of the hydrogen in the benzene ring surrounding the phthalocyanine ring is replaced with chlorine. A functionally separated photoreceptor using phthalocyanine as a charge generator obtained by treating the vapor-deposited film with solvent vapor has high sensitivity to the above-mentioned light with a wavelength of around 800 nm, and the photoreceptor is inexpensive. This invention was achieved based on the knowledge that it is possible to create the same.
即ちこの発明は、導電性支持体上に、有機光導
電性物質による電荷発生層及びこの上に電荷輸送
層を形成した機能分離型電子写真用感光体におい
て、前記電荷発生層の有機光導電性物質が、
一般式
で表わされるガリウムを中心金属として該ガリウ
ムに塩素が結合したフタロシアニンである基本構
造を持ち、このフタロシアニン環の周囲のベンゼ
ン環の水素の一部分が塩素で置換された構造のフ
タロシアニンであり、その蒸着膜を溶媒蒸気処理
したものであることを特徴とする電子写真用感光
体である。 That is, the present invention provides a functionally separated electrophotographic photoreceptor in which a charge generation layer made of an organic photoconductive substance and a charge transport layer are formed on a conductive support, wherein the organic photoconductivity of the charge generation layer is The substance has the general formula It has a basic structure of phthalocyanine in which chlorine is bonded to gallium with gallium as the central metal, and a part of the hydrogen in the benzene ring surrounding this phthalocyanine ring is replaced with chlorine. An electrophotographic photoreceptor characterized in that it is obtained by subjecting it to solvent vapor treatment.
以下本発明を具体的な実施例を示しつつ詳述す
る。 The present invention will be described in detail below with reference to specific examples.
実施例
オルトフタロジニトリル（東京化成社製）12.8
ｇと純度99.999％の塩化ガリウム（フルウチ化学
社製）4.4ｇを300℃のマントルヒーター中のビー
カー中でかくはん混合しながら反応させフタロニ
トリル法を用いてガリウムを中心金属とする上記
一般式で示されるフタロシアニンである基本構造
を持ち、この基本構造のフタロシアニンと該基本
構造のフタロシアニン環の周囲のベンゼン環の水
素の一部分が塩素で置換されたフタロシアニンと
の混合物を合成した。かかる生成物は青黒色の塊
状として得られるので、これを微粉砕したのちテ
トラヒドロフラン（THF）で洗浄し、THF可溶
物を除去し精製した。次に、得られたフタロシア
ニンの含有塩素量を燃焼フラスコ法を用いて分析
した結果、その量はフタロシアニン１分子あたり
2.26個であり、このうち１個は中心金属のガリウ
ムと結合しているのでフタロシアニン環の周囲の
ベンゼン環の水素と置換している塩素は平均1.26
個であつた。Example Orthophthalodinitrile (manufactured by Tokyo Kasei Co., Ltd.) 12.8
g and 4.4 g of gallium chloride (manufactured by Furuuchi Chemical Co., Ltd.) with a purity of 99.999% were reacted while stirring and mixing in a beaker in a mantle heater at 300°C. A mixture of a phthalocyanine with this basic structure and a phthalocyanine in which a portion of the hydrogens of the benzene ring surrounding the phthalocyanine ring of the basic structure was replaced with chlorine was synthesized. This product was obtained as a blue-black lump, and was purified by pulverizing it and washing it with tetrahydrofuran (THF) to remove THF-soluble materials. Next, the amount of chlorine contained in the obtained phthalocyanine was analyzed using the combustion flask method, and the amount was found to be per molecule of phthalocyanine.
2.26, and one of these is bonded to the central metal gallium, so the average number of chlorine substituted for hydrogen in the benzene ring around the phthalocyanine ring is 1.26.
It was individual.
次にこのフタロシアニンを、真空蒸着装置中の
アルミナるつぼに10mg入れ、るつぼ温度500℃で
抵抗加熱蒸着法によりガラス板上に0.02μｍの薄
膜を形成した。この薄膜の600〜900nｍの光に対
する光吸収スペクトルを自記分光光度計を用い測
定した結果を第４図の曲線Ａで示した。同図の如
くこの薄膜の吸収スペクトルは670mmに肩ピーク、
730nｍに最大ピークを示した。 Next, 10 mg of this phthalocyanine was placed in an alumina crucible in a vacuum deposition apparatus, and a 0.02 μm thin film was formed on a glass plate by resistance heating vapor deposition at a crucible temperature of 500°C. The light absorption spectrum of this thin film for light in the wavelength range of 600 to 900 nm was measured using a self-recording spectrophotometer, and the results are shown by curve A in FIG. As shown in the figure, the absorption spectrum of this thin film has a shoulder peak at 670 mm.
The maximum peak was shown at 730 nm.
上記薄膜試料を、テトラヒドロフラン蒸気中に
て20時間曝露し同様に光吸収スペクトルを調べた
ところ、同曲線Ｂのように前記吸収ピークが長波
長域即ち最大ピークが745nｍにシフトした。 When the thin film sample was exposed to tetrahydrofuran vapor for 20 hours and the optical absorption spectrum was examined in the same manner, the absorption peak shifted to a longer wavelength region, that is, the maximum peak was shifted to 745 nm, as shown in curve B.
次に、具体的に上記のようにして得られたフタ
ロシアニンをアルミナるつぼ中に0.1ｇ入れ、る
つぼ温度500℃で抵抗加熱蒸着を約20分間行い第
５図に示す構造の如く、アルミニウム基板５１上
に、電荷発生層５２（0.2μｍ）を形成した。これ
をテトラヒドロフラン蒸気中に20時間曝露した
後、テトラヒドロフランに溶解したポリビニルカ
ルバゾール樹脂（東京化成社製、特級）をコーテ
イングし、テトラヒドロフランを充分乾燥させ電
荷輸送層５３（6μｍ厚さ）を形成し、感光体を
得た。 Next, 0.1 g of the phthalocyanine obtained as described above was put into an alumina crucible, and resistance heating vapor deposition was performed at a crucible temperature of 500°C for about 20 minutes to form a structure on an aluminum substrate 51 as shown in FIG. A charge generation layer 52 (0.2 μm) was formed thereon. After exposing this to tetrahydrofuran vapor for 20 hours, it was coated with polyvinylcarbazole resin (manufactured by Tokyo Kasei Co., Ltd., special grade) dissolved in tetrahydrofuran, and the tetrahydrofuran was thoroughly dried to form a charge transport layer 53 (6 μm thick), which was then photosensitive. I got a body.
得られた感光体の電子写真的特性である分光感
度を測定した結果を第６図中に曲線Ｃで示した
同図から明らかなように、この感光体は900n
ｍにおいても１cm2／μJ以上の（実測値1.4cm2／μJ）
の非常に高い感度が認められ、800nｍにおいて
は2.5cm2／μJの高感度を示した。このように600〜
900nｍの領域において、ほぼフラツトな特性を
有する感光体は現在殆んど知らていないのであ
り、上述のレーザービームプリンター等の装置に
用いる場合極めて有利である。 The results of measuring the spectral sensitivity, which is an electrophotographic characteristic, of the photoreceptor obtained are shown as curve C in Figure 6.As is clear from the figure, this photoreceptor has a 900 nm
Even in m, it is more than 1cm 2 /μJ (actual value 1.4cm 2 /μJ)
A very high sensitivity of 2.5 cm 2 /μJ was observed at 800 nm. 600 ~ like this
At present, there are almost no known photoreceptors having substantially flat characteristics in the 900 nm region, and this is extremely advantageous when used in devices such as the above-mentioned laser beam printer.
比較例
アルミニウム基板上に実施例により得たフタロ
シアニンを真空蒸着法により薄膜0.2μｍを形成し
た。得られたものをテトラヒドロフラン溶媒蒸気
処理を行わずにポリビニルクラバゾールのテトラ
ヒドロフラン溶液をコーテイングし乾燥厚さ6μ
ｍの電荷輸送層を形成し感光体を作成した。Comparative Example A thin film of 0.2 μm was formed from the phthalocyanine obtained in the example on an aluminum substrate by vacuum evaporation. The obtained product was coated with a tetrahydrofuran solution of polyvinyl clavazole without performing tetrahydrofuran solvent vapor treatment to a dry thickness of 6 μm.
A photoreceptor was prepared by forming a charge transport layer of m.
得られた感光体の分光感度を測定した結果を第
７図に示したが、同図によれば850nｍまでは１
〜1.5cm2／μJの感度を示したが、900nｍ附近に至
つてこれが約1/2に低下した。即ち同図からの実
測によれば800nｍにおいて1.5cm2／μJ、900nｍに
おいて0.7cm2／μJであつた。 The results of measuring the spectral sensitivity of the obtained photoreceptor are shown in Figure 7. According to the figure, up to 850 nm, the spectral sensitivity is 1.
It showed a sensitivity of ~1.5 cm 2 /μJ, but this decreased to about 1/2 at around 900 nm. That is, according to actual measurements from the same figure, it was 1.5 cm 2 /μJ at 800 nm and 0.7 cm 2 /μJ at 900 nm.
上述の通り、実施例による感光体は、蒸着膜に
対する溶媒蒸気処理によつてこれを行わない比較
列に比べて、特に850〜950nｍ波長域において約
1.7〜２倍の感度上昇が確認され、特性向上は顕
著であることが判つた。 As mentioned above, the photoreceptor according to the example has a property that the vapor deposited film is subjected to solvent vapor treatment, so that the photoreceptor has approximately
An increase in sensitivity of 1.7 to 2 times was confirmed, and it was found that the improvement in characteristics was remarkable.
以上説明したように本発明による感光体は、上
述した蒸着膜に対して、単に溶媒蒸気処理を行う
ことにより、800nｍ前後の近赤外域の感度を大
幅に上昇させ、かかる波長域の光源である半導体
レーザを用いたレーザビームプリンタ用の感光体
として優れた効果を発揮し、又使用する電荷発生
層は、ごく薄い膜で十分であり、真空装置を使用
する時間が短時間で済み感光体の作成が容易で安
価に量産が可能である等の効果を奏する。また本
感光体は上述したレーザービームプリンタのみで
なく、フアツクスまたはLEDを光源としたプリ
ンタ、更には、半導体レーザーを光源としたその
他の光記録デバイスにも適時応用することができ
る。 As explained above, the photoreceptor according to the present invention can significantly increase the sensitivity in the near-infrared region of around 800 nm by simply subjecting the above-described vapor-deposited film to a solvent vapor treatment, and can be used as a light source in this wavelength region. It exhibits excellent effects as a photoreceptor for laser beam printers that use semiconductor lasers, and the charge generation layer used only needs to be a very thin film, and the time required to use a vacuum device is short. It has the advantage of being easy to create and mass-produced at low cost. Further, the present photoreceptor can be applied not only to the above-mentioned laser beam printer, but also to a printer using a fax or LED as a light source, and furthermore, to other optical recording devices using a semiconductor laser as a light source.
第１図は従来の電子写真用感光体の一例の断面
図、第２図は同他のSe−（Se−Te）積層型電子
写真用感光体の断面図、第３図は同機能分離型の
電子写真用感光体の一例の断面図、第４図は本発
明にて用いるフタロシアニンの一例の光吸収スペ
クトル図、第５図は本発明による感光体の一例の
断面図、第６図は実施例による感光体の分光感度
曲線、第７図は比較例による感光体の分光感度曲
線を示す図である。
５１……アルミニウム基板、５２……電荷発生
層、５３……電荷輸送層。
Figure 1 is a sectional view of an example of a conventional electrophotographic photoreceptor, Figure 2 is a sectional view of another Se-(Se-Te) laminated type electrophotographic photoreceptor, and Figure 3 is a functionally separated type. FIG. 4 is a light absorption spectrum diagram of an example of phthalocyanine used in the present invention, FIG. 5 is a cross-sectional view of an example of a photoconductor according to the present invention, and FIG. FIG. 7 is a diagram showing a spectral sensitivity curve of a photoreceptor according to a comparative example. 51... Aluminum substrate, 52... Charge generation layer, 53... Charge transport layer.
Claims (1)
荷発生層及びこの上に電荷輸送層を形成した機能
分離型電子写真用感光体において、前記電荷発生
層の有機光導電性物質が、 一般式 で表わされるガリウムを中心金属とし該ガリウム
に塩素が結合したフタロシアニンである基本構造
を持ち、このフタロシアニン環の周囲のベンゼン
環の水素の一部分が塩素で置換された構造のフタ
ロシアニンであり、その蒸着膜を溶媒蒸気処理し
たものであることを特徴とする電子写真用感光
体。[Scope of Claims] 1. A functionally separated electrophotographic photoreceptor in which a charge generation layer made of an organic photoconductive substance and a charge transport layer are formed on a conductive support, wherein the organic photoconductivity of the charge generation layer is The chemical substance has the general formula This phthalocyanine has a basic structure in which gallium is the central metal and chlorine is bonded to the gallium, and a portion of the hydrogen in the benzene ring surrounding this phthalocyanine ring is replaced with chlorine. An electrophotographic photoreceptor, characterized in that it is obtained by subjecting it to solvent vapor treatment.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15398182A JPS5944053A (en) | 1982-09-06 | 1982-09-06 | Electrophotographic receptor |
| US06/528,122 US4587188A (en) | 1982-09-06 | 1983-08-31 | Phthalocyanine photoconductor for electrophotography |
| DE3332005A DE3332005C2 (en) | 1982-09-06 | 1983-09-05 | Electrophotographic recording material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15398182A JPS5944053A (en) | 1982-09-06 | 1982-09-06 | Electrophotographic receptor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5944053A JPS5944053A (en) | 1984-03-12 |
| JPH0330853B2 true JPH0330853B2 (en) | 1991-05-01 |
Family
ID=15574298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15398182A Granted JPS5944053A (en) | 1982-09-06 | 1982-09-06 | Electrophotographic receptor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5944053A (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5358813A (en) * | 1902-01-13 | 1994-10-25 | Fuji Xerox Co., Ltd. | Crystals of chlorogallium phthalocyanine and method of preparing them |
| JPS59155847A (en) * | 1983-02-25 | 1984-09-05 | Toyo Ink Mfg Co Ltd | Electrophotographic sensitive body |
| JP3166293B2 (en) * | 1991-04-26 | 2001-05-14 | 富士ゼロックス株式会社 | Novel hydroxygallium phthalocyanine crystal, photoconductive material comprising the new crystal, and electrophotographic photoreceptor using the same |
| US5393629A (en) * | 1991-04-26 | 1995-02-28 | Fuji Xerox Co., Ltd. | Electrophotographic photoreceptor |
| JP2797847B2 (en) * | 1992-06-25 | 1998-09-17 | 富士ゼロックス株式会社 | Electrophotographic photoreceptor |
| JP2797852B2 (en) * | 1992-07-24 | 1998-09-17 | 富士ゼロックス株式会社 | Electrophotographic photoreceptor |
| JPH08120190A (en) * | 1994-08-31 | 1996-05-14 | Fuji Xerox Co Ltd | Production of chlorogallium phthalocyanine crystal |
| US8206880B2 (en) | 2009-06-05 | 2012-06-26 | Ricoh Company, Ltd. | Electrophotographic photoreceptor, and image forming apparatus and process cartridge therefor using the photoreceptor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57148745A (en) * | 1981-03-11 | 1982-09-14 | Nippon Telegr & Teleph Corp <Ntt> | Lamination type electrophotographic receptor |
-
1982
- 1982-09-06 JP JP15398182A patent/JPS5944053A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57148745A (en) * | 1981-03-11 | 1982-09-14 | Nippon Telegr & Teleph Corp <Ntt> | Lamination type electrophotographic receptor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5944053A (en) | 1984-03-12 |
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