JPH03297041A - Emitter setting method - Google Patents
Emitter setting methodInfo
- Publication number
- JPH03297041A JPH03297041A JP2099560A JP9956090A JPH03297041A JP H03297041 A JPH03297041 A JP H03297041A JP 2099560 A JP2099560 A JP 2099560A JP 9956090 A JP9956090 A JP 9956090A JP H03297041 A JPH03297041 A JP H03297041A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- electron
- wehnelt
- axis
- center
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 10
- 239000013078 crystal Substances 0.000 claims abstract description 53
- 229910025794 LaB6 Inorganic materials 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野］
本発明は、電子顕微鏡や電子ビーム描画装置等の電子銃
のエミッタのセツティング方法に係り、特にＬａ８６等
の単結晶エミッタでかつエミッタの軸心ｋ＜１１０＞の
結晶方位に略合致させた単結晶エミッタのセツティング
方法に関するものである。[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention relates to a method for setting an emitter of an electron gun such as an electron microscope or an electron beam lithography device, and in particular to a method for setting an emitter of an electron gun such as an electron microscope or an electron beam lithography device. The present invention relates to a method for setting a single crystal emitter which is large in size and substantially aligned with the crystal orientation of the emitter axis k<110>.
（従来の技術）
ＬａＢｓ等の単結晶エミッタは、特開昭５６−８４８Ａ
＋号公報に示されているように、細心を＜ｔｏｏ＞ 、
＜ＩＩＯ＞またはく１目〉等の結晶方位に設定すること
に工り十分なエミツシヨンを有する点対称または線対称
のエミツシヨンパターンを得て、これをエミッタ温度や
バイアス電圧の増加に工って１つの円形クロスオーバ偉
として使用してい友。(Prior art) Single crystal emitters such as LaBs are disclosed in Japanese Patent Application Laid-Open No. 56-848A.
As shown in the + issue, we pay close attention to
A point-symmetric or line-symmetric emitter pattern with sufficient emission can be obtained by setting it in a crystal orientation such as <IIO> or <1>, and this can be modified to increase the emitter temperature and bias voltage. Use it as a circular crossover vehicle.
（発明が解決しょうとする課題）
結晶方位を上記の工うに設定すると、仕事関数の低い面
から比較的低い温度でも十分なエミツシヨンを得ること
ができるが、点対称せたは線対称のマルチビームである
ため、エミッタ温度やバイアス電圧を高くすることに工
って１つのりαスオーバ像にする必要があり、エミッタ
温度の上昇はエミッタの寿命を短かくする欠点がある。(Problem to be solved by the invention) If the crystal orientation is set in the above manner, sufficient emission can be obtained even at a relatively low temperature due to the surface with a low work function. Therefore, it is necessary to increase the emitter temperature and bias voltage to obtain a single α-sovere image, and an increase in the emitter temperature has the disadvantage of shortening the life of the emitter.
また、上記の工うなマルチビームを無理にモノビームに
する使用方法によると時間と共に各電子放出点のエミブ
シッン比が変化する。例えば、＜１００＞の結晶方位の
ものでは、中央の１点の周囲に４点のエミッタぢンパタ
ーンが得られてい次ものが、中央はほとんどなくなって
しまう等の変化を示し、時間に対する安定性に劣る欠点
を有してい友。Furthermore, according to the above-mentioned method of forcibly converting a multi-beam into a mono-beam, the emibushin ratio of each electron emission point changes with time. For example, in the case of <100> crystal orientation, an emitter pattern of four points is obtained around one point in the center, and then the emitter pattern at the center is almost completely absent. A friend who has inferior shortcomings.
本発明の目的は、細心を＜１１０＞の結晶方位に略合致
させる工うにした単結晶エミッタを用いながら、仕事関
係の低い１つの特定の結晶面がらの電子放出をエリ強く
うながし、他の同じ仕事関係の結晶面からの電子放出を
押え、エリ低温で安定なモノビーム金得ることのできる
エミッタのセブティング方法を提供するにある。The purpose of the present invention is to strongly encourage electron emission from one specific crystal plane with a low work relationship, while using a single crystal emitter that is meticulously designed to approximately match the <110> crystal orientation. The object of the present invention is to provide an emitter separation method capable of suppressing electron emission from work-related crystal planes and obtaining stable monobeam gold at low temperatures.
（課題を解決する几めの手段）
上記目的を達成するための本発明は、ＬａＢ６等の単結
晶エミッタでありがっ該エミッタの軸心を＜１１０＞の
結晶方位に略合致させた単結晶エミッタを電子銃にセッ
トするに際し、単結晶エミッタの頂部を、陽極に対向し
て電子を放出するウェネルトの電子放出穴の中心に対し
、電子の放出に伴って＜１１０＞の結晶方位を挾んで前
記頂部に形成される２つの自然形成面の稜線と直交する
方向に対して±３００の範囲内でがっ電子放出穴の半径
の０ないし３０％に相当する量ずらしてセットするもの
である。(Elaborate Means for Solving the Problems) The present invention for achieving the above object uses a single crystal emitter such as LaB6, and the axis of the emitter is made to substantially coincide with the <110> crystal orientation. When setting the emitter in the electron gun, place the top of the single crystal emitter between the center of the Wehnelt electron emission hole that emits electrons facing the anode, and hold the <110> crystal orientation as the electrons are emitted. The two naturally formed surfaces formed on the top are set to be shifted within a range of ±300 by an amount corresponding to 0 to 30% of the radius of the electron emission hole in a direction perpendicular to the ridgeline.
なお、単結晶エミッタの細心に対して＜１１０＞の結晶
方位が傾いているときは、この傾きにＬり２つの自然形
成面のうちウェネルトの電子放出穴の開口面となす角度
が小さくなる側の自然形成面上にウェネルトの中心が位
置する方向へずらせてセットすることが好ましい〇
（作用）
自然形成面は仕事関数が低い部分に電子の放出に伴って
形成されるものであり、その発生位置は単結晶エミッタ
の結晶方位から知ることができる。In addition, when the <110> crystal orientation is tilted with respect to the fineness of the single crystal emitter, the side that forms the smaller angle with the opening plane of Wehnelt's electron emission hole of the two naturally formed planes is It is preferable to set the center of Wehnelt in the direction where it is located on the naturally formed surface of The position can be determined from the crystal orientation of the single crystal emitter.
この工うに自然形成面の発生位置が既知の単結晶エミッ
タを上記の工うにセットすると、２つの自然形成面部分
のうちウェネルトの電子放出穴の中心側に位置する万は
バイアス電圧による電子放出抑制効果が低く、他方は該
抑制効果が強く働くため、実質的に中心側に位置する自
然形成面部分からビームを放出する。In this method, when a single crystal emitter whose naturally formed surface is known to occur is set in the above method, the one located on the center side of Wehnelt's electron emission hole among the two naturally formed surfaces is suppressed from emitting electrons by bias voltage. On the other hand, since the suppressing effect is strong, the beam is emitted from the naturally formed surface portion located substantially on the center side.
なお、単結晶エミッタの細心に対する結晶方位が若干傾
いている場合には、その傾きに応じて上記の方向へずら
せば、ウェネルトの中心側に位置する自然形成面部分か
らのビーム発生が工り確実に行なわれる。If the crystal orientation of the single crystal emitter is slightly tilted, shifting it in the above direction according to the tilt will ensure that the beam is generated from the naturally formed surface located toward the center of the Wehnelt. It will be held in
（＊前例］
以下本発明の実施例を第１図ないし第５図に工り説明す
る。第１図において、１０はＬａＢ＋ｓの単結晶エミッ
タ、２０はウェネルト、３０は陽極である。単結晶エミ
ッタ１ｏは、＜１１０＞の結晶方位Ａ−Ａが単結晶エミ
ッタ１ｏの幾何学的細心０２−０２と略合致しているも
ので、先端部が円錐状に形成され、最先端は半径「が数
μｍの球面状に形成されている。(*Precedent) An embodiment of the present invention will be explained below with reference to FIGS. 1 to 5. In FIG. 1, 10 is a LaB+s single crystal emitter, 20 is a Wehnelt, and 30 is an anode.Single crystal emitter 1o, the <110> crystal orientation A-A approximately matches the geometrical fineness 02-02 of the single crystal emitter 1o, and the tip is formed into a conical shape, and the tip has a radius of several It is formed into a spherical shape of μm.
通常、単結晶エミッタｉｏ、ウェネルト２ｏお工び陽極
３ｏは同一軸心０１−０１上に配列されるものであるが
、本発明は単結晶エミッタ１ｏの軸心０２ ０ｚ’ｉｉ
−上記軸心。□−０□、正確にはウェネルト２０の陽極
３ｏに対向する下面側の電子放出穴２１の中心に対し、
寸法ｅ偏心させてセットする。Normally, the single crystal emitter io, Wehnelt 2o and the anode 3o are arranged on the same axis 01-01, but in the present invention, the axis 02-0z'ii of the single-crystal emitter 1o
-Above axis center. □-0□, to be more precise, relative to the center of the electron emission hole 21 on the lower surface side facing the anode 3o of the Wehnelt 20,
Dimension e: Set eccentrically.
偏心量ｅと偏心の方向について説明すると、第２図に示
すように、単結晶エミッタ１ｏを電子放出穴２１の中心
に合致させてセットして使用し九とき、単結晶エミッタ
−１０の頂部に電子の放出に伴ってその放出部に自然形
成面＋１２．ｌｌｂが形成される。自然形成面１１ａ、
Ｉｌｂは、＜１１０＞の結晶方位Ａ−Ａが単結晶エミッ
タ１ｏの細心０２−０２に合致しているときには、仕事
関数の関係がら第２図に示すように、＜１１０＞の結晶
方位を挟置で形成され、単結晶エミッタ１０の結晶方位
から決まる所定位置に現われる。To explain the amount of eccentricity e and the direction of eccentricity, as shown in FIG. As electrons are emitted, a naturally formed surface +12. llb is formed. Naturally formed surface 11a,
When the <110> crystal orientation A-A matches the fineness 02-02 of the single crystal emitter 1o, Ilb has the <110> crystal orientation sandwiched between them as shown in Figure 2 due to the work function relationship. The emitter 10 is formed at a predetermined position and appears at a predetermined position determined by the crystal orientation of the single crystal emitter 10.
しかして、まず偏心の方向は、第３図に示す工うに、中
心Ｕ１２＞ら自然形成面＋１３．ｌｌｂの稜線１２と直
交する方向Ｂ−Ｂが最適であり、この方向に対して±３
００の範囲において好結果が得られる。ま九、偏心量ｅ
は、電子放出穴２１の半径Ｒ。First, the direction of the eccentricity is as shown in FIG. 3, from the center U12>to the naturally formed surface +13. The direction B-B perpendicular to the ridge line 12 of llb is optimal, and ±3 to this direction.
Good results are obtained in the range of 0.00. 9. Eccentricity e
is the radius R of the electron emission hole 21.
に対し１０ないし３０チすなわち０．１ Ｒ１（＝Ｒｚ
）ないし０．３ Ｒ１（＝Ｒ３）の範囲が好ましい。す
なわち、単結晶エミッタ１０の頂点が第３図に斜線で示
す範囲Ｃの中に位置する↓うにセットすることが好まし
い。10 to 30 chi, or 0.1 R1 (=Rz
) to 0.3 R1 (=R3) is preferred. That is, it is preferable to set the single crystal emitter 10 so that its apex is located within the shaded area C in FIG.
この工うに単結晶エミッタ１０の頂点をウェネルト２０
の電子放出穴２１の中心Ｏ１に対しでずらせると、中心
Ｏ１に合致している場合には第２図に示したように２つ
の自然形成面＋１ａ、Ｉｌｂを住じつつ両面からそれぞ
れ電子を放出し２本のビームを生ずるのに対し、第４図
お工び第５図において中心０１に近い自然形成面１１Ｈ
に対応する部分からエリ強く電子を放出し、実質的にモ
ノビームとなる。In this process, the apex of the single crystal emitter 10 is
If it is shifted from the center O1 of the electron emission hole 21 of In contrast, the naturally formed surface 11H near the center 01 in Fig. 4 and Fig. 5 emits two beams.
It emits electrons strongly from the part corresponding to the beam, essentially becoming a mono beam.
これは、２つの自然形成面＋１８．ｌｌｂに対応する部
分のうち、ウェネルト２０の電子放出穴２の中心Ｏ１側
に位置する方の自然形成面１１８に対応する部分はバイ
アス電圧による電子数量抑制効果が低く、他方の自然形
成面１１ｂに対応する部分は該抑制効果が強く働く九め
である。This is 2 naturally formed surfaces + 18. Among the parts corresponding to llb, the part corresponding to the naturally formed surface 118 located on the center O1 side of the electron emission hole 2 of the Wehnelt 20 has a low electron quantity suppression effect due to the bias voltage, and the other naturally formed surface 11b The corresponding part is the ninth part where the suppressing effect is strong.
なお、単結晶エミッタ１０の＜１１０＞の結晶方位Ａ−
Ａは、第１図に示すように、単結晶エミッタ１ｏの軸心
０２−０２に対し若干傾いていることがある。この場合
には、第４図に示す工うに、電子放出穴２Ｉの開口面２
１ａとなす角度αｌ、α２のうち小さい角度α１側の自
然形成面＋１８ｅウエネルト２０の中心Ｏ１上に位置さ
せるように定めれば、中心Ｏ１側にあって電子を放出す
る側の自然形成面１１２ ｇｉＱ ｔ−電子放出穴２１
の開口面２１ａに近付け、他側の自然形成面１１ｂ側を
開口面２１３から遠ざけることができ、工す確実にモノ
ビームを得ることができる。Note that the <110> crystal orientation A- of the single crystal emitter 10
As shown in FIG. 1, A may be slightly inclined with respect to the axis 02-02 of the single crystal emitter 1o. In this case, as shown in FIG.
1a, the naturally formed surface on the smaller angle α1 side of α1 and α2+18e If it is determined to be located on the center O1 of Wehnelt 20, the naturally formed surface 112 on the side that is on the center O1 side and emits electrons giQ t-electron emission hole 21
213, and the other naturally formed surface 11b can be moved away from the aperture surface 213, so that a monobeam can be reliably obtained.
以上述べ比重うに本発明に工れば、＜１１０＞の結晶方
位が細心と略合致しているＬａＢａ等の単結晶エミッタ
を用いる電子銃において、該単結晶エミッタのセット位
置を若干ずらせるだけで長時間にわ几って安定し九エミ
ブション状態を維持することができる。If the present invention is implemented in the manner described above, in an electron gun using a single crystal emitter such as LaBa whose <110> crystal orientation closely and almost coincides, it is possible to simply slightly shift the set position of the single crystal emitter. It can maintain a stable state for a long time.
【図面の簡単な説明】
第１図は本発明の実施例を示す要部断面図、第２図はウ
ェネルトの電子放出穴と単結晶エミッタの軸心を合致さ
せ几ときの自然形成面の発生状態を示す図、第３図はウ
ェネルトの電子放出穴に対する単結晶エミッタの本発明
に↓るセット位置を説明する九めの図、第４図は第１図
の実施例が使用に工って自然形成面を生じてき次状態を
示す部分断面図、第５図は第４図を下から見九図である
。
Ｏ・・・単結晶エミッタ、
Ａ−Ａ・・・＜１１０＞の結晶方位、
＋１２．Ｉｌｂ・・・自然形成面、 １２・・・稜線
、２０・・・ウェネルト、 ２１・・・電子放出穴、３
０・・・陽極。
呂願人
東芝機械株式会社
第
■
図
第
図
第３
図[Brief Description of the Drawings] Figure 1 is a sectional view of the main part showing an embodiment of the present invention, and Figure 2 is the generation of a naturally formed surface when Wehnelt's electron emission hole and the axis of the single crystal emitter are aligned. Figure 3 is a ninth diagram illustrating the set position of the single crystal emitter in accordance with the present invention with respect to Wehnelt's electron emission hole, and Figure 4 is a diagram showing the state in which the embodiment of Figure 1 is used. FIG. 5 is a partial sectional view showing a state in which a naturally formed surface is generated, and FIG. 5 is a ninth view of FIG. 4 viewed from below. O...single crystal emitter, A-A...<110> crystal orientation, +12. Ilb... Naturally formed surface, 12... Ridge line, 20... Wehnelt, 21... Electron emission hole, 3
0... Anode. Toshiba Machine Co., Ltd. Figure 3 Figure 3
Claims (1)
タの軸心を＜１１０＞の結晶方位に略合致させた単結晶
エミッタを電子銃にセットするに際し、前記単結晶エミ
ッタの頂部を、陽極に対向して電子を放出するウエネル
トの電子放出穴の中心に対し、電子の放出に伴って前記
＜１１０＞の結晶方位を挾んで前記頂部に形成される２
つの自然形成面の稜線と直交する方向に対して±３０°
の範囲内でかつ前記電子放出穴の半径の１０ないし３０
％に相当する量ずらしてセットすることを特徴とするエ
ミッタのセッティング方法。 ２、前記単結晶エミッタの軸心に対して＜１１０＞の結
晶方位が傾いているとき、該傾きにより前記２つの自然
形成面のうち前記ウエネルトの電子放出穴の開口面とな
す角度が小さくなる側の自然形成面上にウエネルトの中
心が位置する方向へずらせてセットすることを特徴とす
る請求項１記載のエミッタのセッティング方法。[Claims] 1. When setting a single-crystal emitter such as LaB_6 whose axis is approximately aligned with the <110> crystal orientation into an electron gun, the single-crystal emitter is The top part is opposed to the anode and the center of Wehnelt's electron emission hole which emits electrons is formed at the top part by sandwiching the <110> crystal orientation as electrons are emitted.
±30° to the direction perpendicular to the ridgeline of the two naturally formed surfaces
and 10 to 30 of the radius of the electron emission hole.
An emitter setting method characterized by shifting the emitter by an amount equivalent to %. 2. When the <110> crystal orientation is tilted with respect to the axis of the single crystal emitter, the angle between the two naturally formed planes and the opening plane of the Wehnelt electron emission hole becomes smaller due to the tilt. 2. The emitter setting method according to claim 1, wherein the emitter is set so as to be shifted in a direction in which the center of the Wehnelt is located on the side naturally formed surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2099560A JPH03297041A (en) | 1990-04-16 | 1990-04-16 | Emitter setting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2099560A JPH03297041A (en) | 1990-04-16 | 1990-04-16 | Emitter setting method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03297041A true JPH03297041A (en) | 1991-12-27 |
Family
ID=14250535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2099560A Pending JPH03297041A (en) | 1990-04-16 | 1990-04-16 | Emitter setting method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03297041A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3901981A1 (en) * | 2020-04-24 | 2021-10-27 | IMS Nanofabrication GmbH | Charged-particle source |
-
1990
- 1990-04-16 JP JP2099560A patent/JPH03297041A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3901981A1 (en) * | 2020-04-24 | 2021-10-27 | IMS Nanofabrication GmbH | Charged-particle source |
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