JPH03292724A - Heat treatment device - Google Patents
Heat treatment deviceInfo
- Publication number
- JPH03292724A JPH03292724A JP9456890A JP9456890A JPH03292724A JP H03292724 A JPH03292724 A JP H03292724A JP 9456890 A JP9456890 A JP 9456890A JP 9456890 A JP9456890 A JP 9456890A JP H03292724 A JPH03292724 A JP H03292724A
- Authority
- JP
- Japan
- Prior art keywords
- heat
- reaction tube
- temperature
- heat treatment
- semiconductor wafers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 49
- 235000012431 wafers Nutrition 0.000 abstract description 17
- 239000004065 semiconductor Substances 0.000 abstract description 16
- 239000012495 reaction gas Substances 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 239000010409 thin film Substances 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 2
- 229910020968 MoSi2 Inorganic materials 0.000 abstract 1
- 239000000112 cooling gas Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 6
- 239000000835 fiber Substances 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910000604 Ferrochrome Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910021343 molybdenum disilicide Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】 ［産業上の利用分野コ 本発明は熱処理装置に関する。[Detailed description of the invention] [Industrial application fields] The present invention relates to a heat treatment apparatus.
［従来の技術及び発明が解決すべき課題］従来から半導
体ウェハ製造工程の各種薄膜形成装置のＣＶＤ装置、エ
ピタキシャル成長装置や酸化膜形成装置あるいはドーピ
ング装置の熱拡散装置等に熱処理装置が採用されている
。熱処理装置は半導体ウェハの大口径化に対応してヒー
タの有効内径が３００ｍｍを超えるものまで作られるよ
うになっているが、大口径になるほど反応管内の温度制
御がむずかしい。そのため断面均熱がコントロールしや
すい縦型炉が多く用いられている。しかし、縦型炉は第
３図に示すように複数の例えば１００〜１５０枚の半導
体ウェハ２が水平に載置された石英製のボート１を搬入
量される搬入出口３を設けた反応管４がＦｅＣｒＡＱ製
等の抵抗発熱体を備えたスパイラルヒータ５しこ巻装さ
れ高温加熱されるようになっている。そして反応ガス供
給系に接続された反応ガス吸入口６から供給され反応ガ
ス排出ロアから排気される反応ガスにより半導体ウェハ
２の処理が行われるようになっている。[Prior art and problems to be solved by the invention] Heat treatment equipment has been used in the past for semiconductor wafer manufacturing processes, such as CVD equipment for various thin film formation equipment, epitaxial growth equipment, oxide film formation equipment, or thermal diffusion equipment for doping equipment. . In response to the increasing diameter of semiconductor wafers, heat treatment apparatuses are being manufactured with heaters having an effective inner diameter exceeding 300 mm, but the larger the diameter, the more difficult it is to control the temperature inside the reaction tube. For this reason, vertical furnaces are often used because cross-sectional uniform heating can be easily controlled. However, as shown in FIG. 3, a vertical furnace has a reaction tube 4 equipped with an inlet/outlet 3 into which a quartz boat 1 on which a plurality of, for example, 100 to 150 semiconductor wafers 2 are placed horizontally, is carried in. is wound around a spiral heater 5 equipped with a resistance heating element made of FeCrAQ or the like, and is heated to a high temperature. The semiconductor wafer 2 is processed by the reactive gas supplied from the reactive gas inlet 6 connected to the reactive gas supply system and exhausted from the reactive gas exhaust lower.
そして反応管４は７ｏ○℃〜１２００℃に加熱されるが
輻射熱として奪われる熱量を減少させ効率良く加熱行わ
れるようにスパイラルヒータ５の外周に断熱材８を設け
ている。しかし、この断熱材８はセラミックアアイバー
等で形成され、例えば厚さが５０ｍｍと厚く綿状であっ
て、しかも重量もかなりなもので、熱容量が大きく半導
体ウェハ２の断面均熱をコントロールしながら温度の急
昇降するのは非常に困難であった。特に急降下させるの
には時間がかかり、そのため冷却ガス（空気等）を冷却
ガス流入口９から冷却ガス排気口１０間に流しても１分
間に１０’Ｃの昇降温しか得られなかった。また反応開
始させる場合も断熱材も加熱温度に遠さなければ半導体
ウェハを一定温度で加熱することができないため、反応
開始まで長時間待たなければならなかった。The reaction tube 4 is heated to a temperature of 7°C to 1200°C, but a heat insulating material 8 is provided around the outer periphery of the spiral heater 5 to reduce the amount of heat taken away as radiant heat and to heat efficiently. However, this heat insulating material 8 is made of ceramic fiber or the like, has a thickness of 50 mm, for example, is thick, cotton-like, and is also quite heavy. Sudden rises and falls in temperature were very difficult. In particular, it takes time to bring the temperature down rapidly, so even if cooling gas (air, etc.) is flowed between the cooling gas inlet 9 and the cooling gas exhaust port 10, the temperature can only be increased and decreased by 10'C per minute. Furthermore, even when starting a reaction, the semiconductor wafer cannot be heated at a constant temperature unless the heat insulating material is at a certain temperature, so it is necessary to wait a long time for the reaction to start.
本発明は上記の欠点を解消するためになされたものであ
って、断面均熱を持ちながら温度の急昇降可能な従って
精密な処理が行えるようコントロールでき、しかも処理
時間も非常に短縮できる熱処理装置を提供することを目
的とする。The present invention has been made in order to eliminate the above-mentioned drawbacks, and is a heat treatment device that can rapidly raise and lower the temperature while uniformly heating the cross section, and therefore can be controlled to perform precise treatment, and can also significantly shorten the treatment time. The purpose is to provide
［課題を解決するための手段］
上記の目的を達成するため本発明の熱処理装置は、複数
の被処理体が配置される反応管と、該反応管の外周に設
けられる加熱装置とを備えた熱処理装置において、前記
加熱装置を包囲して設けられ前記反応管の温度を急昇降
可能せしめる遮熱部材と、該遮熱部材に選択的に温度交
換媒体を流通させる手段とを備えたものである。[Means for Solving the Problems] In order to achieve the above object, the heat treatment apparatus of the present invention includes a reaction tube in which a plurality of objects to be treated are arranged, and a heating device provided on the outer periphery of the reaction tube. The heat treatment apparatus includes a heat shielding member provided surrounding the heating device and capable of rapidly raising and lowering the temperature of the reaction tube, and means for selectively flowing a temperature exchange medium through the heat shielding member. .
［作用コ
被処理体が複数枚配置された反応管を巻装する加熱装置
を表面負荷の大きな発熱体を設けたもので作成し、さら
にこの加熱装置を巻装するように薄い遮熱部材を複数層
設ける。このため、遮熱部材の重量も軽くすることがで
き、大きな熱容量を持たずに輻射熱が外部に逃げるのを
遮断し効率よく反応管を加熱することができる。しかも
複数層設けることにより遮熱部材間にも冷却媒体を流通
させることができ、従って温度を急勾配で昇降すること
が可能である。[Operation: A heating device that wraps around a reaction tube in which a plurality of objects to be processed are arranged is made using a heating element with a large surface load, and a thin heat shielding member is further wrapped around this heating device. Provide multiple layers. Therefore, the weight of the heat shielding member can be reduced, and the reaction tube can be heated efficiently by blocking radiant heat from escaping to the outside without having a large heat capacity. Moreover, by providing a plurality of layers, the cooling medium can also flow between the heat shielding members, and therefore the temperature can be raised and lowered at a steep gradient.
［実施例コ
本発明の熱処理装置を半導体ウェハ製造の熱拡散装置の
縦型熱処理装置に適用した一実施例を図面を参照して説
明する。[Embodiment] An embodiment in which the heat treatment apparatus of the present invention is applied to a vertical heat treatment apparatus of a heat diffusion apparatus for manufacturing semiconductor wafers will be described with reference to the drawings.
第１図において熱拡散装置には被処理体である半導体ウ
ェハ２０を水平に複数枚例えば３０枚載置したボート１
０が搬入出装置（図示せず）により搬入呂される搬入出
口３０を設けた反応管４゜を備えている。反応管４０に
は反応ガス供給系（図示せず）に接続された反応ガス吸
入口６０が反応管４０の上部に、吸引ポンプ等から成る
反応ガス排気系（図示せず）に接続された反応ガス排出
ロア０が下部に設けられ、ボート１０上に配置ごれた半
導体ウェハ２０上に反応ガスが平均に行き亘るようにな
っている。反応管４０の外周には抵抗発熱体を備えた加
熱装置５１が設けられる。In FIG. 1, a boat 1 on which a plurality of semiconductor wafers 20 to be processed, for example, 30 wafers, are placed horizontally in a heat diffusion device.
0 is equipped with a reaction tube 4° provided with a carry-in/out port 30 into which the tube is carried in by a carry-in/out device (not shown). The reaction tube 40 has a reaction gas inlet 60 connected to a reaction gas supply system (not shown) at the top of the reaction tube 40, and a reaction gas inlet 60 connected to a reaction gas exhaust system (not shown) consisting of a suction pump, etc. A gas discharge lower 0 is provided at the bottom so that the reaction gas evenly spreads over the semiconductor wafers 20 disposed on the boat 10. A heating device 51 equipped with a resistance heating element is provided around the outer periphery of the reaction tube 40 .
加熱装置５１の外周には遮熱部材である遮熱板５２が第
２図の上面図に示すように８角形状に２層設けられ遮熱
板５２間及び熱拡散装置にの外壁５３間に温度交換媒体
である冷却ガスＣＧが冷却ガス流入口９０から供給され
るようになっている。As shown in the top view of FIG. 2, two layers of heat shield plates 52, which are heat shield members, are provided on the outer periphery of the heating device 51 in an octagonal shape. Cooling gas CG, which is a temperature exchange medium, is supplied from a cooling gas inlet 90.
遮熱板５２間、加熱装置５１及び遮熱板５２間、外壁５
３及び遮熱板５２間に供給された冷却ガスは真空装置に
接続された冷却ガス排気口１００から吸引排出されるよ
うになっており温度交換媒体を流通させる手段を形成し
ている。また１図示してはいないが外壁５３に断熱材を
薄く装着させてもよい。Between the heat shield plates 52, between the heating device 51 and the heat shield plates 52, and the outer wall 5
The cooling gas supplied between the heat shield plate 3 and the heat shield plate 52 is suctioned and discharged from a cooling gas exhaust port 100 connected to a vacuum device, forming a means for circulating a temperature exchange medium. Although not shown in the figure, a thin layer of heat insulating material may be attached to the outer wall 53.
このような構成の熱拡散装置にの加熱装置５１に用いら
れる発熱抵抗体はニケイ化モリブデン（＞１ｏｓｉｚ）
が好適である。Ｍ ｏ Ｓ １□は従来用いられている
ＦｅＣｒ、ＡＱ発熱体の最大表面負荷が１２００°Ｃに
おいて例えば２ Ｗ／ｃｍであるのに対し２０Ｗ／ｄと
１０倍の発熱量であって、強力なパワー増加が得られ、
従来用いられているＦｅＣｒ、ＡＱ発熱体が１０℃／分
の温度上昇であるのに対し１００’Ｃ／分と温度勾配を
急俊にすることができる。The heating resistor used in the heating device 51 of the heat diffusion device having such a configuration is made of molybdenum disilicide (>1 osiz).
is suitable. The maximum surface load of conventionally used FeCr and AQ heating elements is, for example, 2 W/cm at 1200°C, but M o S 1□ has a heat output of 20 W/d, which is 10 times more powerful. You get an increase in power,
While the conventionally used FeCr and AQ heating elements have a temperature rise of 10°C/min, the temperature gradient can be made steeper to 100'C/min.
またこの加熱装置５１の外周に設けられる遮熱板５２は
アルミナファイバーを厚さ３ｍｍに形成した板状体であ
って、２層相互の間隙１０ｍｍとして断ｆＪ８角形に配
置される。アルミナファイバーは板状体に簡単に形成し
やすいが、円筒状に形成してもよい。アルミナファイバ
ーは軽量であってしかも厚さも薄いが２層設ければ、加
熱装置からの熱量が輻射二不ルギーとして反応管４の外
側に発散されるのを十分に防止できる。しかも冷却ガス
が遮熱板間の間隙にも流入され、遮熱板の熱容量が小さ
いので例えば２ｍ／ｍｉｎの常置の空気を循環させても
１分間に６０℃の温度の急降下が得られる。The heat shield plate 52 provided on the outer periphery of the heating device 51 is a plate-like body made of alumina fiber formed to have a thickness of 3 mm, and is arranged in an octagonal cross section fJ with a gap of 10 mm between the two layers. Alumina fibers can be easily formed into a plate shape, but may also be formed into a cylindrical shape. Although alumina fiber is lightweight and thin, providing two layers can sufficiently prevent the amount of heat from the heating device from being dissipated to the outside of the reaction tube 4 as radiation. Moreover, the cooling gas also flows into the gap between the heat shield plates, and since the heat capacity of the heat shield plates is small, even if the air is permanently circulated at a rate of, for example, 2 m/min, the temperature can be rapidly lowered by 60° C. per minute.
以上のような構成の熱拡散装置の動作を説明する。図示
しない搬人出装置によりボート１に載置された半導体ウ
ェハ２０が搬入出口３０から挿入されるとＭｏ５ｉｚに
通電し発熱させ加熱装置１ｆ５１を作動させる。加熱装
置５１からの熱は遮熱板５２により効率的に反応管４０
の加熱に使われ反応管４０の温度は急上昇し所望の温度
例えば１０００℃に短時間で達する。そして水素化物や
ハロゲン化物等の反応ガスが反応ガス吸入口６０から半
導体ウェハ２０の全体に均一に供給され反応ガス排出ロ
ア０から吸引される間に、半導体ウェハ２０の薄膜に不
純物の拡散が所定時間待われ処理が終了する。その後冷
却ガス流入口９ｏがら空気を流入させ冷却ガス排気口１
００から吸引して遮熱板５２の相互間、外壁５３間、加
熱装置５１間を通過させ、全体を冷却させると共に反応
ガスの供給を停止させる。遮熱板５２は薄く熱容量も小
さく遮熱板５２間にも空気流があるため６０℃／分で反
応管４０は急冷される。しかも急冷されても断面均熱は
非常に良好に行われる。そのため反応ガスによる拡散処
理は速やかに停止され、反応管内の全ての半導体ウェハ
に対して均一な処理状態を保つことができる。またセラ
ミックファイバーから成る断熱材はパーティクル発生源
となるため、この断熱材を用いないとパーティクルのな
いクリーンな状態を保持して処理を行うことができる。The operation of the heat diffusion device configured as above will be explained. When the semiconductor wafer 20 placed on the boat 1 is inserted from the loading/unloading port 30 by a loading/unloading device (not shown), the Mo5iz is energized to generate heat and activate the heating device 1f51. Heat from the heating device 51 is efficiently transferred to the reaction tube 40 by the heat shield plate 52.
The temperature of the reaction tube 40 increases rapidly and reaches a desired temperature, for example, 1000° C., in a short time. Then, while the reactive gas such as hydride or halide is uniformly supplied to the entire semiconductor wafer 20 from the reactive gas inlet 60 and sucked from the reactive gas discharge lower 0, impurities are diffused into the thin film of the semiconductor wafer 20 in a predetermined manner. The time-waiting process ends. After that, air is introduced through the cooling gas inlet 9o, and the cooling gas exhaust port 1
00 and passes between the heat shield plates 52, between the outer walls 53, and between the heating devices 51 to cool the whole and stop the supply of the reaction gas. Since the heat shield plate 52 is thin and has a small heat capacity, and there is an air flow between the heat shield plates 52, the reaction tube 40 is rapidly cooled at 60° C./min. Furthermore, even when rapidly cooled, cross-sectional uniform heating is achieved very well. Therefore, the diffusion process using the reaction gas is quickly stopped, and a uniform process state can be maintained for all semiconductor wafers in the reaction tube. Furthermore, since the heat insulating material made of ceramic fibers is a source of particle generation, if this heat insulating material is not used, it is possible to maintain a clean state without particles during processing.
以上の説明は本発明の一実施例であって本発明はこれに
限定されることはない。即ち加熱装置や遮熱板も反応管
の外周のみでなく上下に設けたものでもよい。また加熱
装置に用いられる抵抗発熱体はニケイ化モリブデンに限
定するものでなく、表面負荷の大きなものならば公知の
ものを採用してもよい。遮熱板も２層とは限らず、多層
にまた円筒状に設けてもよい。The above description is one example of the present invention, and the present invention is not limited thereto. That is, the heating device and the heat shield plate may be provided not only on the outer periphery of the reaction tube but also on the upper and lower sides. Further, the resistance heating element used in the heating device is not limited to molybdenum disilicide, and any known resistance heating element may be used as long as it has a large surface load. The heat shield plate is not limited to two layers, and may be provided in multiple layers or in a cylindrical shape.
［発明の効果コ
以上の説明からも明らかなように本発明の熱処理装置に
よれば、表面負荷の大きい抵抗発熱体を備えた加熱装置
と加熱装置からの輻射熱を効率よく反応管の加熱に使わ
れるように薄い複数層から成る遮熱板を用い遮熱板相互
間にも冷却ガスが通過できるようにしたため反応管の断
面均熱を保持して温度の急昇降可能となった。そのため
、均一な温度で一定処理ができ製品にバラツキのない品
質が向上した半導体ウェハを製造することができる。し
かも作動や開始から終了までが短時間でできるので効率
的な生産が可能となる。[Effects of the Invention] As is clear from the above description, the heat treatment apparatus of the present invention can efficiently use the heating device equipped with a resistance heating element with a large surface load and the radiant heat from the heating device to heat the reaction tube. By using heat shield plates made of multiple thin layers as shown in Figure 1, cooling gas can pass between the heat shield plates, making it possible to maintain uniform cross-sectional heating of the reaction tube and rapidly raise and lower the temperature. Therefore, it is possible to manufacture semiconductor wafers that can be processed at a constant temperature at a uniform temperature and have improved quality with no product variation. Furthermore, the process from start to finish can be completed in a short time, allowing for efficient production.
第１図は本発明の熱処理装置の一実施例を示す構成図、
第２図は第１図に示す一実施例の上面図、第３図は従来
例を示す図である。
（温度交換媒体を流通させる手段）FIG. 1 is a configuration diagram showing an embodiment of the heat treatment apparatus of the present invention;
FIG. 2 is a top view of the embodiment shown in FIG. 1, and FIG. 3 is a diagram showing a conventional example. (Means for circulating temperature exchange medium)
Claims (1)
周に設けられる加熱装置とを備えた熱処理装置において
、前記加熱装置を包囲して設けられ前記反応管の温度を
急昇降可能せしめる遮熱部材と、該遮熱部材に選択的に
温度交換媒体を流通させる手段とを備えたことを特徴と
する熱処理装置。In a heat treatment apparatus equipped with a reaction tube in which a plurality of objects to be treated are arranged and a heating device provided on the outer periphery of the reaction tube, the heating device is provided surrounding the heating device and allows the temperature of the reaction tube to be rapidly raised and lowered. A heat treatment apparatus comprising a heat shielding member and means for selectively flowing a temperature exchange medium through the heat shielding member.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9456890A JPH03292724A (en) | 1990-04-10 | 1990-04-10 | Heat treatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9456890A JPH03292724A (en) | 1990-04-10 | 1990-04-10 | Heat treatment device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03292724A true JPH03292724A (en) | 1991-12-24 |
Family
ID=14113916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9456890A Pending JPH03292724A (en) | 1990-04-10 | 1990-04-10 | Heat treatment device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03292724A (en) |
-
1990
- 1990-04-10 JP JP9456890A patent/JPH03292724A/en active Pending
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