JPH03288346A - Optical recording medium - Google Patents
Optical recording mediumInfo
- Publication number
- JPH03288346A JPH03288346A JP8813090A JP8813090A JPH03288346A JP H03288346 A JPH03288346 A JP H03288346A JP 8813090 A JP8813090 A JP 8813090A JP 8813090 A JP8813090 A JP 8813090A JP H03288346 A JPH03288346 A JP H03288346A
- Authority
- JP
- Japan
- Prior art keywords
- optical recording
- layer
- recording medium
- magneto
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 40
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 26
- 239000000956 alloy Substances 0.000 claims abstract description 26
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims 2
- 230000000694 effects Effects 0.000 abstract description 11
- 230000035945 sensitivity Effects 0.000 abstract description 10
- 239000000654 additive Substances 0.000 abstract description 4
- 230000000996 additive effect Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 70
- 239000010408 film Substances 0.000 description 33
- 239000007789 gas Substances 0.000 description 9
- 239000011241 protective layer Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 230000007423 decrease Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229920005668 polycarbonate resin Polymers 0.000 description 5
- 239000004431 polycarbonate resin Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- -1 C Addition of r Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- WSSSPWUEQFSQQG-UHFFFAOYSA-N 4-methyl-1-pentene Chemical compound CC(C)CC=C WSSSPWUEQFSQQG-UHFFFAOYSA-N 0.000 description 2
- 230000005374 Kerr effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229910017818 Cu—Mg Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 241001428214 Polyides Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000005300 metallic glass Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、レーザーなどの光により情報の記録、再生、
消去などを行う光記録媒体に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention provides information recording, reproducing, and
It relates to optical recording media that perform erasing, etc.
さらに詳細には、金属反射層を有する光記録媒体に関し
、なかでも記録層が光磁気記録層である光磁気記録媒体
に特に好ましく適用できるものに関する。More specifically, the present invention relates to an optical recording medium having a metal reflective layer, and is particularly applicable to a magneto-optical recording medium in which the recording layer is a magneto-optical recording layer.
光記録媒体については、高密度・大容量の情報記録媒体
として種々の研究開発が行われている。Various research and developments are being conducted on optical recording media as high-density, large-capacity information recording media.
特に、情報の消去可能な光磁気記録媒体は、応用分野が
広く種々の材料・システムが発表されており、その実用
化が待望されている。In particular, various materials and systems for erasable information on magneto-optical recording media have been announced for a wide range of application fields, and their practical application is eagerly awaited.
光磁気記録材料としては、例えば特開昭５２−３１７０
３号公報記載のＦｅＴｂ、特開昭５６１２６９０７号公
報記載のＦｅＴｂＧｄ、特開昭５８−７３７４６号公報
記載のＦｅＴｂＣｏ、ＦｅＣｏＤｙ、特開昭６１−１６
５８４６号公報記載のＦｅＮｄなとすでに多くの提案が
ある。As a magneto-optical recording material, for example, JP-A-52-3170
FeTb described in JP-A No. 3, FeTbGd as described in JP-A-56126907, FeTbCo and FeCoDy as described in JP-A-58-73746, JP-A-61-16
There have already been many proposals such as FeNd described in No. 5846.
しかし、これらの情報の消去可能な光磁気記録媒体の実
用化には、記録、再生特性のより一層の向上が必要であ
る。However, in order to put these information erasable magneto-optical recording media into practical use, it is necessary to further improve recording and reproducing characteristics.
これに対し、光磁気記録層上、もしくはその上に誘導体
層を介して金属反射層を設ける方法が提案されている。In contrast, a method has been proposed in which a metal reflective layer is provided on the magneto-optical recording layer or thereon via a dielectric layer.
この方式は、カー効果とファラデー効果の併用により高
いＣ／Ｎを得る点で優れている。従来、この金属反射層
として、Ａ１．を用いたもの（特開昭５８−８３３４６
号公報、特開昭５９−１３２４３４号公報）、Ｃｕを用
いたもの（特開昭５９−８１５０号公報）、Ａ１２系合
金を用いたもの（特開昭６２−１３７７４３号公報）、
ステンレスを用いたもの（特開昭５９−１７１０５４号
公報）、Ｔｅを用いたもの（特開昭６２−５２７４４号
公報）、非晶質金属膜を用いたもの（特開昭６１−５７
０５３号公報）などが提案されている。This method is excellent in that a high C/N can be obtained by using both the Kerr effect and the Faraday effect. Conventionally, as this metal reflective layer, A1. (Japanese Unexamined Patent Publication No. 58-83346)
(Japanese Patent Application Laid-Open No. 59-132434), those using Cu (Japanese Patent Application Laid-open No. 59-8150), those using A12 alloy (Japanese Patent Application Laid-open No. 62-137743),
Those using stainless steel (JP-A-59-171054), those using Te (JP-A-62-52744), and those using an amorphous metal film (JP-A-61-57).
No. 053) and the like have been proposed.
しかしながら、高反射率のＡｇ、Ａｊ！、Ｃｕなどを用
いた場合には、その高熱伝導性のため記録感度が大幅に
低下し、一方比較的熱伝導性の低いステンレス、Ｔｅを
用いた場合には、記録感度は向上するが反射率が低いた
め、充分なＣ／Ｎ比が得られないという問題を有する。However, Ag with high reflectance, Aj! When materials such as , Cu, etc. are used, the recording sensitivity decreases significantly due to their high thermal conductivity.On the other hand, when stainless steel and Te, which have relatively low thermal conductivity, are used, recording sensitivity improves but the reflectance decreases. Since the C/N ratio is low, there is a problem that a sufficient C/N ratio cannot be obtained.
また、高温多湿下での記録層の劣化があり、これら金属
層で記録層を保護する必要があった。Furthermore, the recording layer deteriorates under high temperature and high humidity, and it is necessary to protect the recording layer with these metal layers.
これらの問題に対し、Ａ１２へのＴａ添加（特開昭６４
−４９３８号公報） 、Ａｕ、、Ａｇ、Ａ１２゜Ｃｕへ
のＴｉ、Ｍｇ、希土類添加（特開昭５９−３８７８１号
公報）、ＡｌへのＣｕ−Ｍｇ合金、Ｍｇ−３ｉ合金、Ｃ
ｒ、Ｓｎ、Ｍｇの添加（特開昭６２−２３９３４９号公
報）、Ａ／ｌ！へのＴｉ添加（特開昭６２−１３７７４
３号公報、特開昭６４−６６８４７号公報）などの各種
合金膜が提案されている。しかし、これらの従来の合金
膜により、高反射率を保持したままで熱伝導率を改善す
ることは可能であるが、高温多湿下での耐久性を改善す
るには、添加元素をかなりの量添加する必要があり、こ
れに必要な量添加すると反射層として必要な高反射率を
保持することはできず、反射層と保護層の両機能を満足
するものが得られない
〔発明が解決しようとする課題〕
本発明は、かかる現状に鑑みなされたもので、金属反射
層の改良により高感度で高Ｃ／Ｎ比の特性を有し、かつ
耐久性に優れた光記録媒体を提供することを目的とする
。To solve these problems, Ta addition to A12 (Japanese Unexamined Patent Publication No. 1983
-4938 publication), Au, Ag, Ti, Mg, rare earth addition to A12°Cu (JP-A-59-38781 publication), Cu-Mg alloy to Al, Mg-3i alloy, C
Addition of r, Sn, Mg (Japanese Unexamined Patent Publication No. 62-239349), A/l! Addition of Ti to (JP-A-62-13774
Various alloy films have been proposed, such as those disclosed in Japanese Patent Application Laid-Open No. 64-66847 (Japanese Patent Application Laid-Open No. 64-66847). However, although it is possible to improve thermal conductivity while maintaining high reflectance with these conventional alloy films, it is necessary to add significant amounts of additive elements to improve durability under high temperature and high humidity conditions. If it is added in the required amount, it will not be possible to maintain the high reflectance required for the reflective layer, and it will not be possible to obtain a layer that satisfies both the functions of a reflective layer and a protective layer. [Problem to be solved] The present invention was made in view of the current situation, and an object of the present invention is to provide an optical recording medium that has characteristics of high sensitivity and high C/N ratio and excellent durability by improving the metal reflective layer. With the goal.
本発明は、金属反射層を有する光記録媒体において、該
金属反射層がＡｇにＡｆを３〜６ｏ原子％含有せしめた
ＡｇＡｊ２合金からなることを特徴とする光記録媒体で
ある。The present invention is an optical recording medium having a metal reflective layer, characterized in that the metal reflective layer is made of an AgAj2 alloy in which Ag contains 3 to 6 atomic percent of Af.
本発明は、以下のようにしてなされたものである。すな
わち、本発明らは、前記欠点を克服すべく鋭意検討した
結果、金属反射層をＡｇにＡｆを含有せしめたＡｇＡｌ
合金とすることにより、Ｃ／Ｎ比が良好でさらに耐久性
にも優れた光記録媒体が得られることを見出し本発明に
到達した。The present invention was made as follows. That is, as a result of intensive studies to overcome the above-mentioned drawbacks, the present inventors have developed a metal reflective layer using AgAl, which is Ag containing Af.
The present invention was achieved by discovering that by forming an alloy, an optical recording medium with a good C/N ratio and excellent durability can be obtained.
以下、これについて詳細に説明する。This will be explained in detail below.
本発明のＡｇＡｌ合金におけるＡＩ！の添加量は、増加
すると反射率が低下しＣ／Ｎが低下する傾向がみられる
。一方、少なすぎると耐久性向上に及ぼす効果が少ない
。この観点からＡ／２の添加量は３〜６０原子％が好ま
しく、とりわけ１０〜４０原子％がさらに好ましい。AI in the AgAl alloy of the present invention! As the amount of addition increases, there is a tendency for the reflectance to decrease and the C/N to decrease. On the other hand, if it is too small, the effect on improving durability will be small. From this point of view, the amount of A/2 added is preferably 3 to 60 atomic %, particularly preferably 10 to 40 atomic %.
さらに、このＡｇＡｌ合金に特定の元素を含有せしめる
ことにより、記録感度向上すなわち熱伝導率低下、耐久
性向上が得られることを見出した。Furthermore, it has been found that by incorporating a specific element into this AgAl alloy, recording sensitivity can be improved, that is, thermal conductivity can be lowered, and durability can be improved.
この特定の元素は、Ｔｉ、Ｔａ、Ｚｒ、Ｙ、Ｒｅなどの
遷移金属、Ｉｎ、Ｓｎ、Ｚｎ、Ｍｇの群から選ばれた少
なくとも１種の元素であり、中でもＴｉ、Ｔａ、Ｚｒ、
Ｙの少なくとも１種が好ましい。この中でもＡｇにＡ／
２を３〜６０原子％含有せしめ、さらに前記特定の元素
の少なくとも１種を０．３〜８．０原子％含有せしめた
ＡｇＡ／！合金が、記録感度、高温多湿下での耐久性、
Ｃ／Ｎ、コストの４点で優れている点で好ましい。This specific element is at least one element selected from the group of transition metals such as Ti, Ta, Zr, Y, and Re, In, Sn, Zn, and Mg, and among them, Ti, Ta, Zr,
At least one type of Y is preferred. Among these, Ag is A/
AgA/! contains 3 to 60 atomic percent of 2 and further contains 0.3 to 8.0 atomic percent of at least one of the above-mentioned specific elements. The alloy improves recording sensitivity, durability under high temperature and humidity,
It is preferable because it is excellent in four points: C/N and cost.
なお、これらの金属反射層の膜厚は、１００〜２０００
人が好ましい。１００人未満では反射膜の反射率が低下
しＣ／Ｎが劣化し、一方２，０００人を超えると感度が
低下する。In addition, the film thickness of these metal reflective layers is 100 to 2000
People are preferred. If the number of participants is less than 100, the reflectance of the reflective film decreases and the C/N ratio deteriorates, while if the number of participants exceeds 2,000, the sensitivity decreases.
金属反射層の膜厚は、媒体権威、誘電体層などの種類、
膜厚によって適宜選択される。The thickness of the metal reflective layer depends on the media, type of dielectric layer, etc.
It is selected appropriately depending on the film thickness.
これら金属反射層の形成方法としては、公知の真空蒸着
法、スパッタリング法、イオンビームスパッタリング法
、ＣＶＤ法などが考えられるが、下地層との接着性、合
金組成の制御性、組成分布などの点でスパッタリング法
が好ましい。Possible methods for forming these metal reflective layers include well-known vacuum evaporation methods, sputtering methods, ion beam sputtering methods, and CVD methods; A sputtering method is preferred.
また、膜の堆積速度、スパッタガス圧などは、生産性、
膜応力を考慮し、適宜選択される。In addition, the film deposition rate, sputtering gas pressure, etc.
It is selected appropriately in consideration of membrane stress.
本発明の光記録媒体としては、前述の光磁気記録媒体の
ほか、周知のコンパクトディスク、ビデオディスクなど
反射膜を用いるものであれば特に限定されないことは本
発明の趣旨から明らかである。なかでも、酸化しやすい
希土類元素を記録層として用いる光磁気記録媒体に特に
好ましく適用できる。It is clear from the spirit of the present invention that the optical recording medium of the present invention is not particularly limited to the above-mentioned magneto-optical recording medium, as long as it uses a reflective film, such as well-known compact disks and video disks. Among these, it can be particularly preferably applied to a magneto-optical recording medium that uses a rare earth element that is easily oxidized as a recording layer.
ところで、この光磁気記録媒体は、記録層としては、光
磁気効果により記録できるものであればよく、公知の、
膜面に垂直な方向に磁化容易方向を有し、磁気光学効果
の大きい磁性金属薄膜、例えば前述のＦｅＴｂ合金、Ｆ
ｅＴｂＣｏ合金、ＦｅＴｂＧｄ合金およびＮｄＤｙＣｏ
合金などの希土類元素−遷移金属元素の非晶質合金が代
表例として挙げられる。By the way, in this magneto-optical recording medium, the recording layer may be of any type as long as it can record by the magneto-optical effect.
A magnetic metal thin film having an easy magnetization direction perpendicular to the film surface and having a large magneto-optic effect, such as the aforementioned FeTb alloy, F
eTbCo alloy, FeTbGd alloy and NdDyCo
Typical examples include amorphous alloys of rare earth elements and transition metal elements, such as alloys.
光磁気記録層の膜厚は、１００〜１，０００人が好まし
く、１５０〜５００人がさらに好ましい。The thickness of the magneto-optical recording layer is preferably 100 to 1,000, more preferably 150 to 500.
また、その積層権威は、その金属反射層が光磁気記録層
の光入射面と反対側に形成される点を除いてその槽底は
特に限定されない、なかでも、金属反射層と光磁気記録
層間に透明誘電体層を設ける権威は、感度、Ｃ／Ｎ、耐
久性の向上面より好ましい、さらに、基板と光磁気記録
層間にも誘電体層を設けた権威、つまり光磁気記録層を
誘電体層で挟んだ権威は、−層のＣ／Ｎ向上、透湿防止
などの効果による耐久性向上が得られさらに好ましい。In addition, the lamination authority is not particularly limited to the bottom of the tank except that the metal reflective layer is formed on the side opposite to the light incident surface of the magneto-optical recording layer. It is preferable to provide a transparent dielectric layer between the substrate and the magneto-optical recording layer in terms of improved sensitivity, C/N, and durability. The material sandwiched between layers is more preferable because it improves durability due to effects such as improving the C/N of the negative layer and preventing moisture permeation.
一方、金属反射層を光磁気記録層上に接して設けた権威
でも、本発明のＡｇｌ！合金からなる金属反射層は実用
上充分な性能を示す。この権威は、透明誘電体層が不要
となるので、生産性と媒体コストの観点より好ましい。On the other hand, even in the case where a metal reflective layer is provided in contact with the magneto-optical recording layer, the Agl! A metal reflective layer made of an alloy exhibits sufficient performance for practical use. This authority is preferable from the viewpoint of productivity and medium cost since a transparent dielectric layer is not required.
これらの各権威は、目的に応して選択される。Each of these authorities is selected depending on the purpose.
前記槽底に用いる基板側、金属反射層側の両透明誘電層
としては、その目的により光干渉効果、カー効果エンハ
ンスメントなどの効果を奏することが必要で、ある程度
以上の高屈折率を有することが好ましい。また、使用す
るレーザー光に透明であることが必要であり、透明誘電
体層としては公知のとおり金属の酸化物、チッ化物、硫
化物、炭化物、フッ化物もしくはこれらの複合体が適用
できる。具体的には、酸化ケイ素、酸化インジウム、酸
化タンタル、酸化アルミニウム、チッ化ケイ素、チッ化
アルくニウム、チッ化チタン、硫化亜鉛、フッ化マグネ
シウム、フッ化アルξニウム、炭化ケイ素およびこれら
の複合物が挙げられるが、これに限定されないことはい
うまでもない。Both the transparent dielectric layers on the substrate side and the metal reflective layer side used in the tank bottom need to have effects such as optical interference effect and Kerr effect enhancement depending on their purpose, and must have a high refractive index above a certain level. preferable. Furthermore, it is necessary to be transparent to the laser beam used, and as the transparent dielectric layer, metal oxides, nitrides, sulfides, carbides, fluorides, or composites thereof can be used as known. Specifically, silicon oxide, indium oxide, tantalum oxide, aluminum oxide, silicon nitride, aluminum nitride, titanium nitride, zinc sulfide, magnesium fluoride, aluminum ξnium fluoride, silicon carbide, and composites thereof. Examples include things, but it goes without saying that it is not limited to these.
これらの誘電体は、膜中に金属元素を含んだものでもよ
い。また、パリレン、ポリイ〔ド、パラフィンなど有機
物も適用できる。これら透明誘電体は、複層構造でもよ
い。These dielectrics may contain metal elements in their films. Organic materials such as parylene, polyide, and paraffin can also be used. These transparent dielectrics may have a multilayer structure.
光磁気記録層などの酸化されやすい記録層に接する透明
誘電体としては、酸化劣化防止面からチッ化物などの酸
素を含まないものが好ましい。The transparent dielectric material in contact with a recording layer that is easily oxidized, such as a magneto-optical recording layer, is preferably a material that does not contain oxygen, such as a nitride, from the viewpoint of preventing oxidative deterioration.
なかでも、チッ化アルミニウム、チッ化シリコン、アル
ミニウム・シリコンチッ化物、チッ化タンタルなどが、
膜応力、膜質面から好ましく適用される。Among them, aluminum nitride, silicon nitride, aluminum/silicon nitride, tantalum nitride, etc.
It is preferably applied from the viewpoint of film stress and film quality.
これら透明誘電体層の膜厚は、媒体権威、屈折率により
最適値が変化する。例えば、前記透明誘電体層で光磁気
記録層を挟んだ権威では、基板と光磁気記録層との間の
透明誘電体層の膜厚によって、光磁気記録層と金属反射
層との間の透明誘電体層の最適膜厚も変化するので、一
義的に決めることはできないが、通常は、基板と光磁気
記録層との間の透明誘電体膜厚が３００〜１，６００人
程度、光磁気記録層と金属反射層との間の透明誘電体膜
厚が３０〜６００人が好適に用いられる。The optimum thickness of these transparent dielectric layers varies depending on the medium quality and refractive index. For example, according to the authority that sandwiched the magneto-optical recording layer between the transparent dielectric layers, depending on the thickness of the transparent dielectric layer between the substrate and the magneto-optical recording layer, the thickness of the transparent dielectric layer between the magneto-optical recording layer and the metal reflective layer The optimal thickness of the dielectric layer varies, so it cannot be determined unambiguously, but usually the thickness of the transparent dielectric between the substrate and the magneto-optical recording layer is about 300 to 1,600, A transparent dielectric film having a thickness of 30 to 600 mm between the recording layer and the metal reflective layer is preferably used.
しかしもちろん、これらの膜厚範囲に限定されるもので
はない。However, of course, the film thickness is not limited to these ranges.
これら透明誘電体層は、常法により形成される。These transparent dielectric layers are formed by conventional methods.
例えば、前記無機物よりなるものは公知の真空蒸着法、
スパッタリング法、イオンビームスパ。For example, the material made of the inorganic material can be formed using a known vacuum evaporation method.
Sputtering method, ion beam spa.
クリング法、ＣＶＤ法などで作製される。It is produced by the Kling method, CVD method, etc.
また、基板としては、ガラス、アクリル樹脂、ポリカー
ボネート樹脂、エポキシ樹脂、４−メチルペンテン樹脂
およびそれらの変性品などが好適に用いられるが、機械
的強度、価格、耐候性、耐熱性、透湿量の点でポリカー
ボネート樹脂が好ましい。In addition, glass, acrylic resin, polycarbonate resin, epoxy resin, 4-methylpentene resin, modified products thereof, etc. are preferably used as the substrate, but mechanical strength, price, weather resistance, heat resistance, moisture permeability, etc. Polycarbonate resin is preferred from this point of view.
前記構成の金属反射層上に無機材料からなる無機保護層
を設けることにより、高温多湿下や、耐ガス性などの耐
久性がさらに改善され、より好ましい。特に、ＡｇＡ４
２合金では、Ｈ，Ｓガスなどにより劣化し、特性が低下
する場合があるが、この無機保護層によりそれを著しく
改善することができる。この無機保護層としては、耐透
湿性、ガスバリヤ性のよいものであれば特に限定されな
いが、記録特性、耐久性面より熱伝導率が低く、それ自
身耐久性に優れているものが好ましく適用される。かか
る無機保護層としては、金属膜と誘電体膜が挙げられる
。By providing an inorganic protective layer made of an inorganic material on the metal reflective layer having the above structure, durability such as resistance to high temperature and humidity and gas resistance is further improved, which is more preferable. In particular, AgA4
2 alloy may be degraded by H, S gas, etc., resulting in a decrease in characteristics, but this inorganic protective layer can significantly improve this. This inorganic protective layer is not particularly limited as long as it has good moisture permeability and gas barrier properties, but in terms of recording properties and durability, it is preferably applied that has a low thermal conductivity and is itself excellent in durability. Ru. Such inorganic protective layers include metal films and dielectric films.
この金属膜は、それ自身の耐久性が充分高く、かつ媒体
の記録感度を低下させないために熱伝導率が低いことが
必要である。そのような特性を有する金属であれば特に
限定する必要はないが、なかでもＴｉ、Ｃｒ、Ｎｉおよ
びこれらの合金からなる金属膜は特に好ましい。なお、
金属膜の膜厚は前記諸点より１０〜３００人が好ましく
、さらに好ましくは３０〜２５０人である。This metal film itself needs to have sufficiently high durability and low thermal conductivity so as not to reduce the recording sensitivity of the medium. Any metal having such characteristics does not need to be particularly limited, but metal films made of Ti, Cr, Ni, and alloys thereof are particularly preferred. In addition,
The thickness of the metal film is preferably 10 to 300 people, more preferably 30 to 250 people, from the above points.
一方、誘電体膜は、熱伝導率が低く膜厚が厚くても記録
特性への影響が小さく、充分な保護ができない点で優れ
ている。かかる誘電体膜には、前記エンハンス層などと
して公知の透明誘電体がそのまま適用できるが、特に耐
透湿性もよいという点でチン化アルくニウム、チン化シ
リコン、アルミニウム・シリコンチッ化物のチッ化物膜
、酸化シリコン、酸化チタンの酸化物膜が好ましく、な
かでもチッ化物膜が酸素が関係しない点で好ましい、誘
電体膜の膜厚は、その材料の熱伝導度、生産性、耐久性
改善に及ぼす効果によって決められる。一義的には言え
ないが、１０〜５００人、好ましくは５０〜３００人が
好適に用いられる。On the other hand, dielectric films are superior in that they have low thermal conductivity, have little effect on recording characteristics even if they are thick, and cannot provide sufficient protection. For such a dielectric film, known transparent dielectrics can be used as they are for the enhancement layer, but nitrides such as aluminum tinide, silicon tinide, and aluminum/silicon nitride can be used because they have particularly good moisture permeation resistance. Oxide films such as silicon oxide and titanium oxide are preferred, and nitride films are particularly preferred because oxygen is not involved.The thickness of the dielectric film is determined to improve the thermal conductivity, productivity, and durability of the material. It is determined by the effect it has. Although it cannot be said unambiguously, 10 to 500 people, preferably 50 to 300 people are suitably used.
また、この無機保護層は、光記録層、金属反射層の上面
だけでなく、それらの端部を覆うことによりその効果は
一層顕著になる。Moreover, this inorganic protective layer is more effective when it covers not only the upper surfaces of the optical recording layer and the metal reflective layer but also the edges thereof.
前記金属反射層および無機保護層の形成方法としては、
公知の真空蒸着法、スパッタリング法、イオンビームス
パッタリング法、ＣＶＤ法などが考えられるが、下地層
との接着性、合金組成の制御性、組成分布などの点でス
パッタリング法が好ましい、また、膜の堆積速度、ガス
圧などは、生産性、膜応力などを考慮し、適宜選択され
る。The method for forming the metal reflective layer and the inorganic protective layer includes:
Known vacuum evaporation methods, sputtering methods, ion beam sputtering methods, CVD methods, etc. can be considered, but the sputtering method is preferable in terms of adhesion with the underlying layer, controllability of alloy composition, composition distribution, etc. The deposition rate, gas pressure, etc. are appropriately selected in consideration of productivity, film stress, etc.
さらに、通常はこの無機保護層上に、機械的保護、さら
なる耐久性の向上などの目的で有機の光および熱硬化性
樹脂からなる有機保護層を設けるのが一般的である。Furthermore, it is common to provide an organic protective layer made of an organic photo- and thermosetting resin on this inorganic protective layer for the purpose of mechanical protection, further improvement of durability, and the like.
以上の構成の光記録媒体は、公知のとおり前記構成のま
まで、さらに保護平板、保護フィルムなど必要な保護を
付加して片面記録媒体として、あるいはその２枚を金属
反射層側で貼り合わせた両面記録媒体として使用される
。As is well known, the optical recording medium with the above structure can be used as a single-sided recording medium by adding necessary protection such as a protective flat plate or a protective film, or by bonding the two sheets together with the metal reflective layer side. Used as a double-sided recording medium.
〔実施例］
以下、本発明を光磁気記録媒体の実施例に基づいて説明
するが、本発明は以下の実施例に限定されるものではな
い。[Examples] The present invention will be described below based on examples of magneto-optical recording media, but the present invention is not limited to the following examples.
実施例中、最適記録レーザーパワー（ｍｗ）およびピン
ホールは、下記のようにして測定した。In the examples, the optimum recording laser power (mw) and pinhole were measured as follows.
レーザーパ −ｍｗ
光磁気記録再生装置（ナカミチ■製○ＭＳ１０００型）
を用い、下記条件で記録パワーを変化させ、再生信号の
二次高調波が最小となる時を最適記録レーザーパワーと
した。Laser par-mw magneto-optical recording/reproducing device (Nakamichi ○MS1000 type)
was used, and the recording power was varied under the following conditions, and the optimum recording laser power was defined as the time when the second harmonic of the reproduced signal was minimized.
〔記録条件］
ディスク回転速度：１．８０Ｏｒｐｍ
記録トラック位置二半径３０ａｎ位置
記録周波数：３．７ＭＨｚ
記録時の印加磁界： ３００エルステッドｄｕｔｙ：５
０％
〔再生条件〕
ティスフ回転速度：１，８０Ｏｒｐｍ
読出しレーザーパワー：ｌ、２ｍｗ
ピンホール
暗室中でフジカラーライトポ・ンクス（フジカラー販売
■製）上に光磁気ディスクをおき、それを通してもれて
くる光の数を数えてピンホール数とした。[Recording conditions] Disk rotation speed: 1.80 Orpm Recording track position: 30 ann radius Recording frequency: 3.7 MHz Magnetic field applied during recording: 300 Oe duty: 5
0% [Reproduction conditions] Tisf rotation speed: 1,80 rpm Readout laser power: 1, 2 mw A magneto-optical disk is placed on Fujicolor Light Ponx (manufactured by Fujicolor Sales ■) in a pinhole darkroom, and the light is leaked through it. The number of lights was counted and determined as the number of pinholes.
実施例１
基板上に透明誘電体層、光磁気記録層、透明誘電体層、
金属反射層を順次積層した構成の光磁気ディスクを以下
のように作製した。Example 1 A transparent dielectric layer, a magneto-optical recording layer, a transparent dielectric layer,
A magneto-optical disk having a structure in which metal reflective layers were sequentially laminated was fabricated as follows.
すなわち、直径１３０ｍｍ、厚さ１．２閣の円盤で１．
６μｍピッチのグループを有するポリカーボネート樹脂
（ＰＣ）製のディスク基板を、３ターゲツト設置可能な
高周波マグネトロンスフく、２り装置（アネルバ■製５
ＰＦ−４３０Ｈ型）の真空槽内に配置し、４Ｘ１０−’
Ｔｏｒｒになるまで排気した。In other words, a disk with a diameter of 130 mm and a thickness of 1.2 mm is 1.
A disk substrate made of polycarbonate resin (PC) having groups with a pitch of 6 μm was installed as a high-frequency magnetron disk capable of installing 3 targets, and 2 devices (manufactured by Anelva ■5) were installed.
PF-430H type) placed in a vacuum chamber of 4X10-'
Exhaust the air until it reaches Torr.
次に、Ａｒ、Ｎｚの混合ガス（Ａ ｒ ： Ｎｔ ＝７
０ ： ３０ｖｏｉ！％）を真空槽内に導入し、圧力１
０ｍＴｏｒｒになるようにＡｒ／Ｎ、混合ガス流量を調
整した。ターゲットとしては直径１００閣、厚さ５■の
／１．。Ｓｉ７°（以下、添数字は組成「原子％」を示
す）の焼結体からなる円盤を用い、放電電力５００ｗ、
放電周波数１３．５６ＭＨｚで高周波スパッタリングを
行い、ＰＣ基板を回転（自転）させながら、透明誘電層
としてＡ１５ｉＮ膜を１，２００人堆積した。Next, a mixed gas of Ar and Nz (A r : Nt = 7
0: 30voi! %) into the vacuum chamber and the pressure is 1
The Ar/N and mixed gas flow rates were adjusted to 0 mTorr. The target is a diameter of 100mm and a thickness of 5mm/1. . Using a disk made of a sintered body of Si7° (hereinafter, the subscript indicates the composition "atomic %"), the discharge power was 500 W,
High-frequency sputtering was performed at a discharge frequency of 13.56 MHz, and 1,200 A15iN films were deposited as a transparent dielectric layer while the PC board was rotated (rotated).
続いて、光磁気記録層として、Ｔｂ□Ｆｅｔ＋ＣＯｍ合
金ターゲットを用い、Ａｒガス圧２ｍＴｏ ｒ ｒ、放
電電力１５０Ｗの条件で高周波スパッタリングを行い、
約２２５人のＴｂＦｅＣｏ合金膜を堆積した。引き続い
て、前記透明誘電層と同じＡｊ！ＳｉＮ 膜を３５０
人設けた。Next, using a Tb□Fet+COm alloy target as the magneto-optical recording layer, high-frequency sputtering was performed under the conditions of Ar gas pressure of 2 mTorr and discharge power of 150 W.
Approximately 225 TbFeCo alloy films were deposited. Subsequently, the same Aj! as the transparent dielectric layer! SiN film 350
I set up a person.
さらに引き続いて、Ａｇターゲット上に３閣口のＡｆお
よびＴｉチップを配置し、Ａｒガス圧２ｍＴｏｒｒ、放
電電力１００ｗの条件で高周波スパッタリングを行い、
金属反射層として４００人のＡ ｇ ｙｓＡ ｌ ｔｏ
Ｔ ｉ ｓ Ｉｌｌを作製した。Subsequently, three-sized Af and Ti chips were placed on the Ag target, and high-frequency sputtering was performed under the conditions of Ar gas pressure of 2 mTorr and discharge power of 100 W.
400 AgysA l to as metal reflective layer
T is Ill was created.
得られた光磁気ディスクの初期特性を測定するとともに
、温度８０″Ｃ１相対湿度８５％の条件で２．０００時
間の耐久性試験を行い、Ｃ／Ｎを測定するとともにピン
ホールの増加数を測定した。In addition to measuring the initial characteristics of the obtained magneto-optical disk, a durability test was conducted for 2,000 hours at a temperature of 80'' C1 and a relative humidity of 85% to measure the C/N and increase in the number of pinholes. did.
結果を第１表に示す。The results are shown in Table 1.
実施例２
光磁気記録層の上のＡｊ！ＳｉＮ膜を４００人とし、金
属反射層を４００人のＡ ｇ ？。Ａｌ、。膜とするほ
かは、実施例１と同様にして光磁気ディスクを作製し、
実施例１と同様に評価した。Example 2 Aj! on the magneto-optical recording layer! 400 people for the SiN film and 400 people for the metal reflective layer. . Al,. A magneto-optical disk was prepared in the same manner as in Example 1 except for forming a film.
Evaluation was made in the same manner as in Example 1.
結果を第１表に示す。The results are shown in Table 1.
比較例１
金属反射層を４００人のＡｇ膜とするほかは、実施例１
と同様にして光磁気ディスクを作製し、実施例１と同様
に評価した。結果を第１表に示す。Comparative Example 1 Example 1 except that the metal reflective layer was a 400 Ag film.
A magneto-optical disk was prepared in the same manner as in Example 1, and evaluated in the same manner as in Example 1. The results are shown in Table 1.
比較例２
金属反射膜を６００人のＡＩ！ｑｂＴｉａとするほかは
、実施例１と同様にして光磁気ディスクを作製し、実施
例１と同様に評価した。Comparative Example 2 600 AIs on metal reflective film! A magneto-optical disk was produced in the same manner as in Example 1, except for using qbTia, and evaluated in the same manner as in Example 1.
結果を第１表に示す。The results are shown in Table 1.
第１表
〔発明の効果〕
本発明は、高感度で高Ｃ／Ｎ比の特性を有し、かつ耐久
性に優れた光記録媒体を提供することができる。Table 1 [Effects of the Invention] The present invention can provide an optical recording medium having characteristics of high sensitivity and high C/N ratio and excellent durability.
Claims (6)
反射層がＡｇにＡｌを３〜６０原子％含有せしめたＡｇ
Ａｌ合金からなることを特徴とする光記録媒体。(1) In an optical recording medium having a metal reflective layer, the metal reflective layer is Ag containing 3 to 60 atomic percent of Al.
An optical recording medium characterized by being made of an Al alloy.
の群から選ばれた少なくとも１種の元素を含有するＡｇ
Ａｌ合金である請求項１記載の光記録媒体。(2) AgAl alloy further contains Ti, Ta, Zr and Y
Ag containing at least one element selected from the group of
The optical recording medium according to claim 1, which is an Al alloy.
または２記載の光記録媒体。(3) Claim 1, wherein the metal reflective layer is in contact with an optical recording layer.
Or the optical recording medium according to 2.
れている請求項１または２記載の光記録媒体。(4) The optical recording medium according to claim 1 or 2, wherein a transparent dielectric layer is provided between the metal reflective layer and the optical recording layer.
が積層されている請求項１〜４のいずれか１項記載の光
記録媒体。(5) The optical recording medium according to any one of claims 1 to 4, wherein a transparent dielectric layer is laminated on the side of the optical recording layer opposite to the metal reflective layer.
ずれか１項記載の光記録媒体。(6) The optical recording medium according to any one of claims 1 to 5, wherein the optical recording layer is a magneto-optical recording layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8813090A JPH03288346A (en) | 1990-04-04 | 1990-04-04 | Optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8813090A JPH03288346A (en) | 1990-04-04 | 1990-04-04 | Optical recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03288346A true JPH03288346A (en) | 1991-12-18 |
Family
ID=13934342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8813090A Pending JPH03288346A (en) | 1990-04-04 | 1990-04-04 | Optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03288346A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1607954A2 (en) * | 2000-07-21 | 2005-12-21 | Target Technology Company, LLC. | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7291374B2 (en) | 1998-06-22 | 2007-11-06 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7314659B2 (en) | 2000-07-21 | 2008-01-01 | Target Technology Company, Llc | Metal alloys for the reflective or semi-reflective layer of an optical storage medium |
| US7314657B2 (en) | 2000-07-21 | 2008-01-01 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7314660B2 (en) | 2000-07-21 | 2008-01-01 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7316837B2 (en) | 2000-07-21 | 2008-01-08 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7374805B2 (en) | 2000-07-21 | 2008-05-20 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
-
1990
- 1990-04-04 JP JP8813090A patent/JPH03288346A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7291374B2 (en) | 1998-06-22 | 2007-11-06 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7384677B2 (en) | 1998-06-22 | 2008-06-10 | Target Technology Company, Llc | Metal alloys for the reflective or semi-reflective layer of an optical storage medium |
| EP1607954A2 (en) * | 2000-07-21 | 2005-12-21 | Target Technology Company, LLC. | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| EP1607954A3 (en) * | 2000-07-21 | 2006-09-20 | Target Technology Company, LLC. | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7314659B2 (en) | 2000-07-21 | 2008-01-01 | Target Technology Company, Llc | Metal alloys for the reflective or semi-reflective layer of an optical storage medium |
| US7314657B2 (en) | 2000-07-21 | 2008-01-01 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7314660B2 (en) | 2000-07-21 | 2008-01-01 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7316837B2 (en) | 2000-07-21 | 2008-01-08 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7374805B2 (en) | 2000-07-21 | 2008-05-20 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
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