JPH03279289A - Carbon crucible for producing silicon single crystal - Google Patents
Carbon crucible for producing silicon single crystalInfo
- Publication number
- JPH03279289A JPH03279289A JP7895290A JP7895290A JPH03279289A JP H03279289 A JPH03279289 A JP H03279289A JP 7895290 A JP7895290 A JP 7895290A JP 7895290 A JP7895290 A JP 7895290A JP H03279289 A JPH03279289 A JP H03279289A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- carbon crucible
- carbon
- single crystal
- silicon single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 30
- 239000010703 silicon Substances 0.000 title claims abstract description 30
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 29
- 239000013078 crystal Substances 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 abstract description 6
- 238000001816 cooling Methods 0.000 abstract description 5
- 238000002425 crystallisation Methods 0.000 abstract description 2
- 230000008025 crystallization Effects 0.000 abstract description 2
- 230000008646 thermal stress Effects 0.000 abstract description 2
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はシリコン単結晶の引き上げに用いるシリコン単
結晶製造用カーボンルツボに関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a carbon crucible for producing silicon single crystals used for pulling silicon single crystals.
従来の技術
チョクラルスキー法を用いてシリコン単結晶の製造が広
く行われている。この方法では、加熱されたルツボ内の
溶融シリコンからシリコン単結晶が引き上げられる。ル
ツボは通常、石英ルツボとその外側に配置されたカーボ
ンルツボから構成される。カーボンルツボは石英ルツボ
を支持する役割を持っている。Background of the Invention Silicon single crystals are widely produced using the Czochralski method. In this method, a silicon single crystal is pulled from molten silicon in a heated crucible. The crucible usually consists of a quartz crucible and a carbon crucible placed outside the quartz crucible. The carbon crucible has the role of supporting the quartz crucible.
ルツボ内の溶融シリコンの温度制御性を向上させるため
に、カーボンルツボ側面の肉厚を小さくする試みが行わ
れた。In order to improve the temperature controllability of the molten silicon in the crucible, attempts were made to reduce the thickness of the side walls of the carbon crucible.
発明が解決しようとする問題点
前述のようにカーボンルツボの肉厚を小さくしてルツボ
の熱容量を小さくすることによって、溶融シリコンの温
度制御性を向上することができる。また消費電力も削減
することが可能である。Problems to be Solved by the Invention As described above, by reducing the thickness of the carbon crucible to reduce the heat capacity of the crucible, the temperature controllability of molten silicon can be improved. It is also possible to reduce power consumption.
しかし、カーボンルツボを複数回使用するとその内部に
シリコンが不均一に含浸される。However, when a carbon crucible is used multiple times, silicon is non-uniformly impregnated inside the crucible.
このためルツボの熱膨張率が一様でなくなり、肉厚は小
さいルツボではクラックが発生し易くなる。クラックは
シリコン単結晶育成完了後の冷却時に発生することが多
い。As a result, the coefficient of thermal expansion of the crucible becomes uneven, and crucibles with small wall thickness tend to crack. Cracks often occur during cooling after silicon single crystal growth is completed.
前述のようにカーボンルツボの肉厚を均一に小さくする
と強度が低下し、クラックが発生し易くなってルツボの
寿命が短かくなるという問題が生じる。このように肉厚
を全体的に均一に小さくする方法には限界があって実用
的ではなかった。As mentioned above, if the thickness of the carbon crucible is made uniformly small, the strength decreases, cracks are more likely to occur, and the life of the crucible is shortened. This method of uniformly reducing the wall thickness as a whole has limitations and is not practical.
発明の目的
前述の従来技術の問題点に鑑み本発明は、溶融シリコン
の温度制御性を向上でき、しかも実用的な耐用寿命が得
られシリコン単結晶製造用カーボンルツボを提供するこ
とを目的としている。Purpose of the Invention In view of the problems of the prior art described above, an object of the present invention is to provide a carbon crucible for producing silicon single crystals that can improve the temperature controllability of molten silicon and has a practical service life. .
発明の要旨
前述の目的を達成するために、この発明は請求項１に記
載のシリコン単結晶製造用カーボンルツボを要旨として
いる。SUMMARY OF THE INVENTION In order to achieve the above-mentioned object, the gist of the present invention is a carbon crucible for producing a silicon single crystal according to claim 1.
問題点を解決するための手段
本発明のシリコン単結晶製造用カーボンルツボは、外側
表面に多数の凹所を設けることを特徴とする。Means for Solving the Problems The carbon crucible for producing silicon single crystals of the present invention is characterized by having a large number of recesses on its outer surface.
凹所はＮＣ加工機によるデインプル加工によって、カー
ボンルツボの側面に設けることが望ましい。It is desirable that the recess be provided on the side surface of the carbon crucible by dimple processing using an NC processing machine.
凹所の最底部におけるルツボの肉厚、つまり最底部から
ルツボ内側表面までの長さは、ルツボの肉厚の１／２以
上に設定することが望ましい。これが１／２以下になる
と、単結晶育成完了後の冷却過程で発生する熱応力に耐
えきれずにクラックが発生し易くなる。また、ルツボ内
の溶融シリコンの温度分布に乱れが生じて、結晶特性に
悪影響を及ぼし、単結晶化率も低下するおそれがある。The wall thickness of the crucible at the bottom of the recess, that is, the length from the bottom to the inner surface of the crucible, is desirably set to 1/2 or more of the wall thickness of the crucible. If this becomes 1/2 or less, the thermal stress generated during the cooling process after the completion of single crystal growth cannot be withstood, and cracks are likely to occur. Furthermore, the temperature distribution of the molten silicon within the crucible may be disturbed, which may adversely affect the crystal properties and reduce the single crystallization rate.
凹所の幅は、ルツボの肉厚の４倍以下にすることが望ま
しい。また隣接する凹所間の距離は３ ｍｍ以上に設定
することが望ましい。これらの限定条件に反すると、ル
ツボの強度が充分でなくなり、寿命が低下する。The width of the recess is desirably no more than four times the wall thickness of the crucible. Further, it is desirable to set the distance between adjacent recesses to 3 mm or more. If these limiting conditions are violated, the crucible will not have sufficient strength and its life will be shortened.
作 用
ルツボの外側表面に多数の凹所を設けることによってル
ツボの熱容量が減少し、熱的応答性が向上する。従って
、溶融シリコンの温度コントロールが容易かつ正確にで
きる。The provision of multiple recesses in the outer surface of the working crucible reduces the heat capacity of the crucible and improves its thermal responsiveness. Therefore, the temperature of molten silicon can be controlled easily and accurately.
実 施 例 以下、図面を参照して本発明の詳細な説明する。Example Hereinafter, the present invention will be described in detail with reference to the drawings.
第１図に示したルツボ８は石英ルツボ１２とその外側に
配置したカーボンルツボ１０から構成される。ルツボ８
はヒータ、保温筒等を有する単結晶引上げ装置内に設け
られるが、第１図では簡単のためにルツボ８のみを示し
た。ルツボ８内には溶融シリコン１３が収容されていて
、そこからシリコン単結晶１４が引上げられる。The crucible 8 shown in FIG. 1 is composed of a quartz crucible 12 and a carbon crucible 10 placed outside the quartz crucible 12. Crucible 8
is installed in a single crystal pulling apparatus having a heater, a heat insulating cylinder, etc., but only the crucible 8 is shown in FIG. 1 for the sake of simplicity. Molten silicon 13 is contained in crucible 8, from which silicon single crystal 14 is pulled.
カーボンルツボ１０の外側表面、特に側面には多数の凹
所１１が設けである。ルツボ表面には結果的に網目状の
厚肉部９が形成されることになる。A number of recesses 11 are provided on the outer surface of the carbon crucible 10, particularly on the side surface. As a result, a mesh-like thick portion 9 is formed on the crucible surface.
凹所１１はディスク型であって、第２図に示すように均
一に配置されている。隣接する凹所１１間の距離Ｗは例
えば１０ｍｍに設定する。また距離ｌは例えば４３；３
ｍｍに設定する。The recesses 11 are disk-shaped and uniformly arranged as shown in FIG. The distance W between adjacent recesses 11 is set to 10 mm, for example. Also, the distance l is, for example, 43;
Set to mm.
第３図に示すように、凹所は球面状に構成されていて、
例えば、幅ａ＝４０ｍｍ、曲率Ｒ＝ ４５ ｍｍとする
。凹所最底部におけるルツボの肉厚ｄは、厚肉部９の肉
厚りの１／２以上の値に設定する。例えばＤ＝１７．
５ｍｍ、 ｄ＝１１．９ｍｍに設定する。As shown in Figure 3, the recess has a spherical shape,
For example, the width a=40 mm and the curvature R=45 mm. The wall thickness d of the crucible at the bottom of the recess is set to a value equal to or more than 1/2 of the wall thickness of the thick wall portion 9 . For example, D=17.
Set to 5mm and d=11.9mm.
第１図に示したカーボンルツボ１０を５個用いてそれぞ
れ１０ロツトのシリコン単結晶を製造した。比較例とし
て同じ大きさで側面の肉厚が２０ ｍｍであり凹所を設
けていない、従来のカーボンルツボを用いて同一条件で
実験を行った。実験の結果は第１表のようであった。本
発明実施例によれば溶融シリコン温度制御性が高く、か
つ消費電力も少く、作業時間が短縮できることが明らか
になった。Using five carbon crucibles 10 shown in FIG. 1, ten lots of silicon single crystals were produced in each. As a comparative example, an experiment was conducted under the same conditions using a conventional carbon crucible of the same size, side wall thickness of 20 mm, and no recess. The results of the experiment were as shown in Table 1. It has been revealed that according to the examples of the present invention, the molten silicon temperature can be easily controlled, the power consumption is low, and the working time can be shortened.
また、これらのルツボをくり返して使用し、クラックが
生じるまでの使用回数を測定した。In addition, these crucibles were used repeatedly and the number of times they were used until cracks appeared was measured.
本発明によるカーボンルツボの平均耐用回数は４２．８
回（各４５．４２．４０．４６゜４１回）であり、従来
品の平均は３７．７回であった。The average service life of the carbon crucible according to the present invention is 42.8
times (41 times each at 45.42.40.46°), and the average for the conventional product was 37.7 times.
このように本発明によるカーボンルツボは従来品よりも
長寿命であることが明らかになった。As described above, it has been revealed that the carbon crucible according to the present invention has a longer life than conventional products.
次に第４，５図を参照して本発明の他の実施例について
簡単に説明する。Next, another embodiment of the present invention will be briefly described with reference to FIGS. 4 and 5.
第４図に示した変形例では、凹所２１が矩形状になって
いる。従ってカーボンルツボ表面には、縦横に走る厚肉
部１９が形成されることになる。In the modification shown in FIG. 4, the recess 21 has a rectangular shape. Therefore, thick portions 19 running vertically and horizontally are formed on the surface of the carbon crucible.
第５図に示した変形例では、カーボンルツボ外側表面に
縦方向に走る溝３１が形成されている。このように凹所
は溝状であってもよい。In the modification shown in FIG. 5, grooves 31 running in the vertical direction are formed on the outer surface of the carbon crucible. In this way, the recess may be groove-shaped.
なお、本発明は前述の実施例に限定されない。例えば、
カーボンルツボを冷却フィン状に加工してもよい。また
、凹所の形状は実施例以外にも様々なものを採用できる
。Note that the present invention is not limited to the above-described embodiments. for example,
The carbon crucible may be processed into a cooling fin shape. In addition, various shapes of the recess can be adopted other than those in the embodiment.
発明の効果
本発明のシリコン単結晶製造用カーボンルツボによれば
以下の効果が得られる。Effects of the Invention According to the carbon crucible for producing silicon single crystals of the present invention, the following effects can be obtained.
（１） ルツボ外側表面に凹所を設は熱容量を減少させ
ることにより熱的応答性が向上して、シリコン融液の温
度コントロールが容易になる。したがって単結晶シリコ
ンの品質を向上できる。またヒータの消費電力を低減で
きる。(1) Providing a recess on the outer surface of the crucible improves thermal response by reducing heat capacity, making it easier to control the temperature of the silicon melt. Therefore, the quality of single crystal silicon can be improved. Furthermore, the power consumption of the heater can be reduced.
（２） 凹所によってルツボ表面積を大きくすることが
でき、シリコンの溶解時間および単結晶育成完了後の冷
却時間を短縮することができる。(2) The surface area of the crucible can be increased by the recess, and the time for melting silicon and the cooling time after completion of single crystal growth can be shortened.
（３） カーボンルツボ側面の厚さを一様に薄くするよ
りも、凹所を設けることによってルツボの強度を保ち、
耐用寿命を長くすることができる。(3) Rather than uniformly reducing the thickness of the side surface of the carbon crucible, the strength of the crucible can be maintained by providing a recess.
The service life can be extended.
第１図は本発明によるシリコン単結晶製造用カーボンル
ツボを示す図、第２図はその拡大平面図、第３図は拡大
断面図、第４図は他の実施例を示す平面図、第５図はさ
らに他の実施例を示す斜視図である。
８・・・・・・・・・・・・・・・・・・・・・・・・
ルツボ１０．３０・・・・・・・・・・・・カーボンル
ツボ１２・・・・・・・・・・・・・・・・・・・・・
石英ルツボ１１．２１・・・・・・・・・・・・凹 所
３１・・・・・・・・・・・・・・・・・・・・・溝１
３・・・・・・・・・・・・・・・・・・・・・溶融シ
リコン１４・・・・・・・・・・・・・・・・・・・・
・シリコン単結晶式
理
人FIG. 1 is a diagram showing a carbon crucible for producing a silicon single crystal according to the present invention, FIG. 2 is an enlarged plan view thereof, FIG. 3 is an enlarged sectional view, FIG. 4 is a plan view showing another embodiment, and FIG. The figure is a perspective view showing still another embodiment. 8・・・・・・・・・・・・・・・・・・・・・・・・
Crucible 10.30・・・・・・・・・Carbon crucible 12・・・・・・・・・・・・・・・・・・
Quartz crucible 11.21・・・・・・・・・Concavity 31・・・・・・・・・・・・・・・・・・Groove 1
3・・・・・・・・・・・・・・・・・・・・・Melted silicon 14・・・・・・・・・・・・・・・・・・・・・
・Silicon single crystal method
Claims (1)
ン単結晶製造用カーボンルツボ。A carbon crucible for producing silicon single crystals, which is characterized by having numerous recesses on its outer surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2078952A JP2707351B2 (en) | 1990-03-29 | 1990-03-29 | Carbon crucible for silicon single crystal production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2078952A JP2707351B2 (en) | 1990-03-29 | 1990-03-29 | Carbon crucible for silicon single crystal production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03279289A true JPH03279289A (en) | 1991-12-10 |
| JP2707351B2 JP2707351B2 (en) | 1998-01-28 |
Family
ID=13676226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2078952A Expired - Fee Related JP2707351B2 (en) | 1990-03-29 | 1990-03-29 | Carbon crucible for silicon single crystal production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2707351B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011067201A1 (en) | 2009-12-04 | 2011-06-09 | Solarworld Innovations Gmbh | Device for holding silicon melt |
| JP2017124972A (en) * | 2017-03-02 | 2017-07-20 | 株式会社Sumco | Silicon single crystal pull-up method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58140392A (en) * | 1982-02-16 | 1983-08-20 | Komatsu Denshi Kinzoku Kk | Method and device for pulling-up of single crystal of silicon |
| JPS58190892A (en) * | 1982-04-28 | 1983-11-07 | Nippon Carbon Co Ltd | Graphite crucible for pulling of silicon single crystal |
| JPS59190892A (en) * | 1983-04-13 | 1984-10-29 | Ricoh Co Ltd | Thermal recording material |
-
1990
- 1990-03-29 JP JP2078952A patent/JP2707351B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58140392A (en) * | 1982-02-16 | 1983-08-20 | Komatsu Denshi Kinzoku Kk | Method and device for pulling-up of single crystal of silicon |
| JPS58190892A (en) * | 1982-04-28 | 1983-11-07 | Nippon Carbon Co Ltd | Graphite crucible for pulling of silicon single crystal |
| JPS59190892A (en) * | 1983-04-13 | 1984-10-29 | Ricoh Co Ltd | Thermal recording material |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011067201A1 (en) | 2009-12-04 | 2011-06-09 | Solarworld Innovations Gmbh | Device for holding silicon melt |
| JP2013512835A (en) * | 2009-12-04 | 2013-04-18 | サン−ゴバン インドゥストリーケラミク レーデンタール ゲゼルシャフト ミット ベシュレンクテル ハフツング | Equipment for holding silicon melt |
| JP2017124972A (en) * | 2017-03-02 | 2017-07-20 | 株式会社Sumco | Silicon single crystal pull-up method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2707351B2 (en) | 1998-01-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |