JPH03274636A - Manufacture of electrode - Google Patents
Manufacture of electrodeInfo
- Publication number
- JPH03274636A JPH03274636A JP7328690A JP7328690A JPH03274636A JP H03274636 A JPH03274636 A JP H03274636A JP 7328690 A JP7328690 A JP 7328690A JP 7328690 A JP7328690 A JP 7328690A JP H03274636 A JPH03274636 A JP H03274636A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- rhenium
- layer
- tungsten
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 36
- 239000002184 metal Substances 0.000 claims abstract description 35
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 28
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 21
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000010937 tungsten Substances 0.000 claims abstract description 19
- 239000010953 base metal Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 8
- 229910001080 W alloy Inorganic materials 0.000 claims description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 3
- 229910052753 mercury Inorganic materials 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 11
- 239000001257 hydrogen Substances 0.000 abstract description 6
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 6
- 238000007747 plating Methods 0.000 abstract description 5
- 230000007257 malfunction Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 description 7
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 3
- 229910052728 basic metal Inorganic materials 0.000 description 2
- 150000003818 basic metals Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Discharge Lamp (AREA)
Abstract
Description
【発明の詳細な説明】
［ＩＩ業上の利用分野］
この発明は高圧水銀灯や金属蒸気放電灯やキセノンラン
プなどの高圧放電灯に用いられる電極の製造方法に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION [II. Field of Industrial Application] The present invention relates to a method for manufacturing electrodes used in high-pressure discharge lamps such as high-pressure mercury lamps, metal vapor discharge lamps, and xenon lamps.
［従来の技術］
第２図は従来の直流点灯の放電ンランブの断面図で、第
３図は第２図のランプの陰極先端部の拡大図である。[Prior Art] FIG. 2 is a sectional view of a conventional DC discharge lamp, and FIG. 3 is an enlarged view of the cathode tip of the lamp shown in FIG.
第２図、第３図において、１は石英ガラスハルツ、２は
封止部、３は陽極、４は陰極、５は口金、θは陰極先端
角度である。In FIGS. 2 and 3, 1 is a quartz glass Harz, 2 is a sealing part, 3 is an anode, 4 is a cathode, 5 is a base, and θ is a cathode tip angle.
このランプは陰極の先端部か先端角度θを有するテーバ
状に形成されており、この角度０の大小によりランプ電
圧に占める陰極降下か異り、それか封入ガス圧のランプ
電圧に対する寄与率に差を生していると考えられている
。This lamp is formed into a tapered shape with a tip angle θ at the tip of the cathode, and depending on the size of this angle 0, the amount of cathode drop that accounts for the lamp voltage varies, and the contribution rate of the filled gas pressure to the lamp voltage varies. It is thought that it is alive.
上記のランプでは、直流点灯の陰極の先端構造について
示しているか、交流点灯の２つの電極の構造も、その先
端部は先端角度θをもつテーバ状に形成することかてき
る。In the above lamp, the cathode tip structure for direct current lighting is shown, but the structure of the two electrodes for alternating current lighting can also be formed by forming the tip portions in a tapered shape with a tip angle θ.
また、従来の電極は、ランタンの酸化物かトープされた
タングステン（Ｗ／Ｌａ２０３）を熱処理（昇温）して
Ｌａ２０．とＷを反応させ、少しのＷＯ２とＬａかてき
、そのＬａか拡散して電極の表面にＬａの単原子層かて
きる（Ｌａ・・・上層／Ｗ、Ｌａ２０．・・・基体）と
考えられている。Conventional electrodes are made by heat-treating (raising the temperature) lanthanum oxide or doped tungsten (W/La203) to La20. It is thought that a small amount of WO2 and La react, and that La diffuses to form a monoatomic layer of La on the surface of the electrode (La...upper layer/W, La20...substrate). It is being
［発明か解決しようとする課題］
電極の構造はタングステンを主体にした材料によって構
成されているのて、上記のような従来の電極の構造では
、製造時にランプ内に不純物として残る水素等のガスか
タングステンに良く吸着され、ランプ完成後、もしくは
点灯中に前記吸着された水素を放出するので点灯不良を
もたらしたつすることか考えられ、点灯性（始動性）に
問題かあったり、また、点灯後もアークかふらついたり
して安定性に問題かある。[Problem to be solved by the invention] Since the electrode structure is made of a material mainly made of tungsten, the conventional electrode structure described above does not allow gases such as hydrogen to remain as impurities in the lamp during manufacturing. It is thought that the adsorbed hydrogen is well adsorbed by tungsten and releases the adsorbed hydrogen after the lamp is completed or during lighting, resulting in poor lighting, which may cause problems with lighting performance (startability), or when the lamp is lit. There is also a problem with stability because the arc is unstable after that.
この発明はかかる：ＪＢを解決するためになされたもの
て、点灯性かよく、アークのふらつきの少い安定した点
灯特性を有するランプを構成する電極の製造方法を提供
することを目的とする。The present invention was made to solve the problem of JB, and an object of the present invention is to provide a method for manufacturing an electrode constituting a lamp that has good lighting performance and stable lighting characteristics with little arc fluctuation.
［課題を解決するための手段］
上記の目的を達成するために、請求項（１）の発明の電
極の製造方法は１タンクステン、もしくはレニウム以外
の金属とのタングステン合金、もしくはレニウム以外の
金属の酸化物を分散したタングステン部材からなる基体
金属の表面にレニウム金属層を形成する工程と、該レニ
ウム金属層と基体金属とを熱処理して、基体金属の表面
にレニウム金属と、基体金属とより成る傾斜機能材料層
を形成する工程とを含むものて、特に、請求項（２）の
発明の混合蒸気金属放電灯の電極においては、レニウム
以外の金属を含まない棒状のタングステンの表面にレニ
ウム層を形成する工程と、このレニウム層とタングステ
ンとを熱処理して、タングステンの表面にレニウムとタ
ングステンとよりなる傾斜機能材料層を形成する工程と
を含むものである。[Means for Solving the Problems] In order to achieve the above object, the method for manufacturing an electrode according to the invention of claim (1) uses 1tanksten, or a tungsten alloy with a metal other than rhenium, or a metal other than rhenium. A step of forming a rhenium metal layer on the surface of a base metal made of a tungsten member in which an oxide of Particularly, in the electrode of the mixed vapor metal discharge lamp according to the invention of claim (2), a rhenium layer is formed on the surface of a rod-shaped tungsten containing no metal other than rhenium. and a step of heat-treating the rhenium layer and tungsten to form a functionally graded material layer made of rhenium and tungsten on the surface of the tungsten.
［作用］
本発明によれば、請求項（１）においては、ランプを作
ったときに、ランプ内に不純物として残留する水素ガス
かあるか、レニウムはタングステンに比して水素ガスの
吸着性は弱いのて、始動時に電極に吸着した水素ガスを
放出して点灯不良を招くことも少く、従って、点灯性は
改善される。[Function] According to the present invention, in claim (1), when the lamp is manufactured, whether there is hydrogen gas remaining as an impurity in the lamp, rhenium has a higher adsorption property for hydrogen gas than tungsten. Since it is weak, it is less likely that the hydrogen gas adsorbed on the electrode will be released during startup, resulting in poor lighting, and therefore the lighting performance will be improved.
さらに電極の材料として、その外表面よりＬｎ−０−Ｗ
で構成するよりＬ ｎ −０−Ｒｅ ／ Ｗて構成する
方か仕事関数か低いのて、仕事関数か低ければ動作温度
か下かり、そのため同一電流の場合は電極温度を下げる
ことかでき、従って電極の損耗か少い。Furthermore, as an electrode material, Ln-0-W is used from its outer surface.
Since the work function of the structure of L n -0-Re / W is lower than that of the structure of L n -0-Re / W, the lower the work function, the lower the operating temperature. Less wear and tear on the electrodes.
また、請求項（２）においては、混合金属蒸気放電ラン
プ中にも水素か存在すると、点灯不良や光束低下を招く
のは同様である。それに加えて、この場合基本金属は、
レニウム以外の金属とのタングステン合金やレニウム以
外の金属酸化物を分散させたタングステン部材であるた
めレニウム以外の金属を含まないのて、点灯中にレニウ
ム以外の金属蒸気か蒸発して管内に付着し、それにより
刻入カスに影響をｒｐえるという欠点もない。Furthermore, in claim (2), if hydrogen is present in the mixed metal vapor discharge lamp as well, it similarly causes poor lighting and a decrease in luminous flux. In addition, in this case the basic metal is
Since it is a tungsten material made of a tungsten alloy with a metal other than rhenium or a tungsten material in which metal oxides other than rhenium are dispersed, metal vapor other than rhenium may evaporate and adhere to the inside of the tube during lighting. However, there is no disadvantage that it may affect the engraving residue.
［実施例コ
第１図（ａ）、（ｂ）はこの発明の一実施例である電極
の製造の過程を説明するための図である。Embodiment FIGS. 1(a) and 1(b) are diagrams for explaining the process of manufacturing an electrode according to an embodiment of the present invention.
この実施例ては、メタルハライドランプ（混合金属蒸気
放電ランプ）を用い、アークの長さか７旧て、そのアー
クを取り囲むハルツ内径か１０ｍｍであって、いわゆる
ショートアーク型放電とロンクアーク型放電との中間の
ような放電である。In this embodiment, a metal halide lamp (mixed metal vapor discharge lamp) is used, and the length of the arc is 7 mm, and the inner diameter surrounding the arc is 10 mm, which is between the so-called short arc type discharge and long arc type discharge. It is a discharge like this.
一般照明用としては、高効率なものて、使用寿命は１．
０［］０〜２，０００時間程度て、ハルツ内壁の黒化現
象の少いこと、即ち、光量減少か少いことか要求されて
いる。For general lighting, it is highly efficient and has a service life of 1.
It is required that the blackening phenomenon of the Harz inner wall be reduced after about 0 to 2,000 hours, that is, the amount of light should be reduced.
まず、第１図（ａ）に示すように、棒状のタングステン
（Ｗ）からなる基体金属ＩＩの表面にメツキ法によって
例えばｌＴ、Ｌｌｌの厚さのレニウム（Ｒｅ）層１２を
作る。次に、このＲｅ層１２を塗布された基体金属１１
を真空中で例えば２．Ｏｎ［］”Ｃに加熱処理を施すと
、同図（ｂ）に示すように、ＷとＲｅか相生拡散するこ
とにより、表面のＲｅ層１２の一部は基体金属１１中に
入り込む。First, as shown in FIG. 1(a), a rhenium (Re) layer 12 having a thickness of, for example, 1T and 11L is formed on the surface of a base metal II made of rod-shaped tungsten (W) by a plating method. Next, the base metal 11 coated with this Re layer 12 is
For example, 2. When On[]''C is subjected to heat treatment, a part of the Re layer 12 on the surface penetrates into the base metal 11 due to interdependent diffusion of W and Re, as shown in FIG. 2(b).
第１図（ａ）、（ｂ）において、縦軸は、ＷもしくはＲ
ｅの含有率を示し、横軸は、電極における位置て、Ｘか
外表面、Ｙか中心を示す。In FIGS. 1(a) and (b), the vertical axis is W or R.
The content of e is shown, and the horizontal axis shows the position in the electrode, where X is the outer surface and Y is the center.
上記のような熱処理を施すことによって、同図（ｂ）中
■、■、■に示すような状態てＲｅか基本金属１１に入
り込む。これは電極の、全ての位置で同一の拡散状態を
示すものではなく、例えば■のように外側面Ｘから０．
５〜６ｇＩＩまてＲｅか１００％存在する場合と、■の
ように外表面ＸはＷが存在する場合などかある。By performing the heat treatment as described above, Re enters the basic metal 11 in the states shown in (2), (2), and (2) in FIG. 2(b). This does not indicate the same diffusion state at all positions of the electrode; for example, as shown in ■, from the outer surface X to 0.
There are cases where 100% of Re is present in 5 to 6gII, and cases where W is present on the outer surface X as shown in (2).
点灯特性を改善するためには、Ｒｅは２〜３％程度電極
の表面に存在すればよい。In order to improve the lighting characteristics, approximately 2 to 3% Re should be present on the surface of the electrode.
Ｗを主体とする基体金属の上にメツキ法、その他の方法
てＲｅ層を付けて熱処理すると、ＲｅかＷの中に拡散し
ていく。この拡散の過程はある程度見積ることかてきる
。重要なことは、Ｒｅかてきるたけ表面に存在している
必要かあるか、表面に存在するためには、どの位の厚さ
、どの位の温度か必要かということか問題になる。When a Re layer is attached on a base metal mainly composed of W by plating or other methods and then heat-treated, Re diffuses into the W. This diffusion process can be estimated to some extent. What is important is whether Re needs to exist on the surface, and how thick and at what temperature it needs to be present on the surface.
一般にＷ中のＲｅは拡散係数Ｄ
（Ｄ ＝ １．９５ｘ １０−’ｅ−””但し Ｑ ＝
５９ＱＫＪ／−０１）（日本金属学会編、金属データ
ーフック改訂第２版１９８４ Ｐ２８より）
に拡散して、その厚さは２ｒＤｔ（ｔは拡散時間）て表
わされる。In general, Re in W has a diffusion coefficient D (D = 1.95x 10-'e-""where Q =
59QKJ/-01) (from the Japan Institute of Metals, revised 2nd edition of Metal Data Hook, 1984, p. 28), and its thickness is expressed as 2rDt (t is diffusion time).
このようにＲｅは時間とともに電極内部に拡散するため
、表面ての濃度は減少するか、最小限、Ｒｅか２〜３％
残るように塗布しなければいけない。−例をあげれば３
％のＲｅを表面に残すため、２４００にのもとて拡散時
間１万時間ては、約３叩、拡散時間１千時間ては約ＩＢ
が必要となる。As Re diffuses into the electrode over time, the concentration at the surface decreases, or at least 2-3% Re.
It must be applied so that it remains. -For example, 3
% of Re left on the surface, if the diffusion time is 10,000 hours for 2400, it will be about 3 strokes, and if the diffusion time is 1,000 hours, it will be about IB.
Is required.
尚、上記実施例てはＷの表面にＲｅをメツキ法によって
形成したか、メツキ法に限らず、スパッタリング法また
は真空蒸着法によって形成することかできるのは勿論で
ある。In the above embodiment, Re was formed on the surface of W by a plating method, but it goes without saying that Re is not limited to the plating method, but may also be formed by a sputtering method or a vacuum evaporation method.
以上の実施例では、混合蒸気金属放電灯の例について述
べたか、混合蒸気金属放電灯の電極にＲｅ以外の金属を
含むＷを用いると、点灯中に電極から金属か管内に葵発
して付着し、その結果ランプの封入カスにｉｔを実える
ので、Ｒｅ以外の金属を含むＷを用いることかてきない
。In the above embodiments, an example of a mixed vapor metal discharge lamp has been described, but if W containing a metal other than Re is used in the electrode of a mixed vapor metal discharge lamp, the metal may emit from the electrode and adhere to the inside of the tube during lighting. As a result, it is produced in the scum of the lamp, so it is impossible to use W containing metals other than Re.
これに反して、混合蒸気金属放電灯以外のランプの電極
に関しては請求項（１）に記載の通り、基体金属として
、レニウム以外の金属とのタンクステン合金やレニウム
以外の金属の酸化物を拡散したタンクステン部材を用い
ることもてきる。On the other hand, for electrodes of lamps other than mixed vapor metal discharge lamps, as described in claim (1), a tanksten alloy with a metal other than rhenium or an oxide of a metal other than rhenium is diffused as the base metal. It is also possible to use a tank stainless steel member.
［発明の効果］
以上説明した通り、本発明の請求項（１）及び（２）の
方法によれば、Ｗに比して水素の吸着性の弱いＲｅを基
体金属の表面に形成しているのて２始動時に電極に吸着
した水素ガスを放出して点灯不良を招くことも少く、点
灯性は改善される。[Effects of the Invention] As explained above, according to the methods of claims (1) and (2) of the present invention, Re, which has weak hydrogen adsorption properties compared to W, is formed on the surface of the base metal. Second, during startup, hydrogen gas adsorbed on the electrodes is less likely to be released and cause lighting failures, and lighting performance is improved.
また、ＲｅはＷに比して単原子層エミッタの基体金属と
して使用した場合仕事関係をさげることかてきるので電
極の温度をさげることかでき、従って電極の損耗か少い
。Further, compared to W, when Re is used as a base metal of a monoatomic layer emitter, the work relationship can be lowered, so the temperature of the electrode can be lowered, and therefore there is less wear and tear on the electrode.
さらに、混合蒸気金属放電灯の電極にＲｅ以外の金属を
含むＷを用いると、点灯中に電極からメタルか管内に蒸
発して付着し、その結果、ランプの発光波長か変動する
か、請求項（２）においては、Ｒｅ以外の金属とのＷ合
金を電極として用いていないので、ランプの発光波長の
変動はなく安定している。Furthermore, if W containing a metal other than Re is used in the electrodes of a mixed vapor metal discharge lamp, will the metal from the electrodes evaporate and adhere to the inside of the tube during lighting, and as a result, the emission wavelength of the lamp will fluctuate? In (2), since a W alloy with a metal other than Re is not used as an electrode, the emission wavelength of the lamp does not fluctuate and is stable.
第１図（ａ）、（ｂ）はこの発明の一実施例である電極
の製造の過程を説明するための図、第２図は従来の直流
点灯のショートアーク型のキセノンランプの断面図、第
３図は第２図のランプの陰極先端部の拡大図である。
図中、
１１ 基体金属
１２：Ｒｅ層FIGS. 1(a) and (b) are diagrams for explaining the manufacturing process of an electrode according to an embodiment of the present invention; FIG. 2 is a cross-sectional view of a conventional short-arc type xenon lamp lit with direct current; 3 is an enlarged view of the cathode tip of the lamp of FIG. 2; FIG. In the figure, 11 Base metal 12: Re layer
Claims (2)
タングステン合金、もしくはレニウム以外の金属の酸化
物を分散したタングステン部材からなる基体金属の表面
にレニウム金属層を形成する工程と、 該レニウム金属層と基体金属とを熱処理して、基体金属
の表面にレニウム金属と、基体金属とより成る傾斜機能
材料層を形成する工程とを含むことを特徴とする電極の
製造方法。(1) Forming a rhenium metal layer on the surface of a base metal made of tungsten, a tungsten alloy with a metal other than rhenium, or a tungsten member in which an oxide of a metal other than rhenium is dispersed; and the rhenium metal layer and the base. 1. A method for manufacturing an electrode, comprising the step of heat-treating the metal to form a functionally graded material layer made of rhenium metal and the base metal on the surface of the base metal.
とを封入した混合蒸気金属放電灯における電極の製造方
法において、 棒状のタングステンの表面にレニウム層を形成する工程
と、 このレニウム層とタングステンとを熱処理して、タング
ステンの表面にレニウムとタングステンとよりなる傾斜
機能材料層を形成する工程とを含むことを特徴とする電
極の製造方法。(2) A method for manufacturing an electrode in a mixed vapor metal discharge lamp containing mercury, a metal other than mercury, and a halogen, including the steps of: forming a rhenium layer on the surface of a rod-shaped tungsten; and tungsten to form a functionally graded material layer made of rhenium and tungsten on the surface of the tungsten.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7328690A JPH03274636A (en) | 1990-03-26 | 1990-03-26 | Manufacture of electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7328690A JPH03274636A (en) | 1990-03-26 | 1990-03-26 | Manufacture of electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03274636A true JPH03274636A (en) | 1991-12-05 |
Family
ID=13513755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7328690A Pending JPH03274636A (en) | 1990-03-26 | 1990-03-26 | Manufacture of electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03274636A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1104933A2 (en) * | 1999-11-29 | 2001-06-06 | Philips Corporate Intellectual Property GmbH | Gas discharge lamp with an oxide emitter electrode |
-
1990
- 1990-03-26 JP JP7328690A patent/JPH03274636A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1104933A2 (en) * | 1999-11-29 | 2001-06-06 | Philips Corporate Intellectual Property GmbH | Gas discharge lamp with an oxide emitter electrode |
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