JPH03272810A - Method and apparatus for grinding diamond and diamond article utilizing the same - Google Patents
Method and apparatus for grinding diamond and diamond article utilizing the sameInfo
- Publication number
- JPH03272810A JPH03272810A JP2072692A JP7269290A JPH03272810A JP H03272810 A JPH03272810 A JP H03272810A JP 2072692 A JP2072692 A JP 2072692A JP 7269290 A JP7269290 A JP 7269290A JP H03272810 A JPH03272810 A JP H03272810A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- polishing
- laser beam
- contact
- designed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 94
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims description 22
- 238000000227 grinding Methods 0.000 title abstract description 5
- 238000005498 polishing Methods 0.000 claims description 65
- 238000007517 polishing process Methods 0.000 claims description 3
- 238000003801 milling Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- SAPGTCDSBGMXCD-UHFFFAOYSA-N (2-chlorophenyl)-(4-fluorophenyl)-pyrimidin-5-ylmethanol Chemical compound C=1N=CN=CC=1C(C=1C(=CC=CC=1)Cl)(O)C1=CC=C(F)C=C1 SAPGTCDSBGMXCD-UHFFFAOYSA-N 0.000 description 1
- BDEDPKFUFGCVCJ-UHFFFAOYSA-N 3,6-dihydroxy-8,8-dimethyl-1-oxo-3,4,7,9-tetrahydrocyclopenta[h]isochromene-5-carbaldehyde Chemical compound O=C1OC(O)CC(C(C=O)=C2O)=C1C1=C2CC(C)(C)C1 BDEDPKFUFGCVCJ-UHFFFAOYSA-N 0.000 description 1
- UNPLRYRWJLTVAE-UHFFFAOYSA-N Cloperastine hydrochloride Chemical compound Cl.C1=CC(Cl)=CC=C1C(C=1C=CC=CC=1)OCCN1CCCCC1 UNPLRYRWJLTVAE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910017945 Cu—Ti Inorganic materials 0.000 description 1
- 235000002756 Erythrina berteroana Nutrition 0.000 description 1
- 244000088811 Erythrina rubrinervia Species 0.000 description 1
- 235000002753 Erythrina rubrinervia Nutrition 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 101100276984 Mus musculus Ccdc88c gene Proteins 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- ZFXYFBGIUFBOJW-UHFFFAOYSA-N theophylline Chemical compound O=C1N(C)C(=O)N(C)C2=C1NC=N2 ZFXYFBGIUFBOJW-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Cutting Tools, Boring Holders, And Turrets (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Laser Beam Processing (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明は、切削上具、メス、ヒートシンク７電了−基
板材料などに用いられるダイヤモンド（乃研磨方法及び
その方法を利用り１、たダイ・ヤモンド製品に関するも
のである、
従来の扶術
ダイヤモンドは優れた硬さ、熱伝導性、電気絶縁性を廟
するため、切削工具、メス、ヒー１＝シンク、電子基板
材料等に用いられている。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a method for polishing diamonds used for cutting tools, scalpels, heat sinks, substrate materials, etc. Regarding products, traditional Fuju diamond has excellent hardness, thermal conductivity, and electrical insulation properties, so it is used in cutting tools, scalpels, heat sinks, electronic board materials, etc.
従来のダイヤモンド切削工具には、焼結体切削７具や単
もダイヤモンド切削工具やＣＶ Ｄ法Ｃ１′″′よるり
゛イヤモン′ドコーデン′グ切削］二具がある。し５か
し、前記各掻工具は、次のような問題がある。Conventional diamond cutting tools include a sintered body cutting tool, a single diamond cutting tool, and a CVD method C1'''' diamond coding cutting tool. Scraping tools have the following problems.
炉、８７ｉ体切削工具（Ｊ、ボンデング材が用いられで
いるのて゛、ダイヤモンド（のらのよりも１１１ｔ摩耗
性熱１云動串か低く釘（天性において劣−）′ｉ″いる
。ス、即行ダイヤ切削工具は、天然、人工を問わず大き
なイ）が追・要となるので高１１１ＩｉΔもσ）となっ
でし、マう。史に、ＣＶ ｌ）によるダイヤセン）・、
ｊ−・−′７〜″／グ切削工具は、基板となる超硬合金
との密着力が弱も＼ため切断時に剥離することかある。Furnace, 87i body cutting tool (J, because the bonding material is used, the abrasive heat of 111t is lower than the nail (inferior in nature) 'i'' than the diamond (Norano). Diamond cutting tools, whether natural or artificial, require a large a), so the height of 111IiΔ is also σ), and it is true.
Since the adhesion of the cutting tool to the cemented carbide substrate is weak, it may peel off during cutting.
そこて、気相合成法ζ′形形成たダイヤモンド膜を所定
形状に切断し、切削ゴニ具に固着くづることが考えられ
る。Therefore, it is conceivable to cut the diamond film formed in the ζ' shape by the vapor phase synthesis method into a predetermined shape, and then fix it to the cutting gonier.
しかし、気相合成法て゛形成したダイヤセン１′：膜は
表面の凹凸がはげしく、それを平坦化する加エフ即ち研
磨が必要となる。この研磨方法として、ダイヤモンド粒
子を用いる所謂「ども擦り法」が利用される。However, the Diacene 1' film formed by the vapor phase synthesis method has a very uneven surface and requires polishing to flatten it. As this polishing method, the so-called "Domo-suri method" using diamond particles is used.
発明が解決しようとす゛る課題
従来例のダイヤモン）ごの研磨法て゛は、研磨速庇が０
． Ｌ μｍ ｎ１ｉ ｎ 、 ＼０．１ μｍ 、
、、／” Ｈと遅いので小さなグイ１（”センドの研磨
に長時間を要［。Problems to be Solved by the Invention The conventional diamond polishing method has a polishing speed of 0.
．． L μm n1i n , \0.1 μm ,
,,/"H is slow, so it takes a long time to polish the send.
又いる。そのため、１１７１磨費用がかさみ、このダイ
ヤモンドを用いたダ・イヤセンド製品か高価なものとな
っ〔しまう。There it is again. As a result, the cost of 1171 polishing increases, making Da Yascend products using this diamond expensive.
この発明は前記事情に鑑み、効率良・くダイヤモンドを
研磨て・きるようにすることを目的と一４゛る。又、池
の目的は安価なダイヤモンド製品を得ること（°ある。In view of the above-mentioned circumstances, it is an object of the present invention to efficiently polish and polish diamonds. Also, the purpose of the pond is to obtain cheap diamond products.
課題全解決するための１−段
この発明は、ダイヤモンドの表面にレー・ザビームの側
面を当接ぜしめる丁程；該レーザじ一ムを前記表面に沿
−〕で相対的に移動せし１、める１程；を備ｊるこεに
ｊ、す、また、レーザビームの発生装置：！５レーザビ
ームの軸方向に対し／（略直角方向に相対的に変移ず〜
るデープル；からなるダイヤぞンドの研磨装置を用いる
ことにより更には、前記方法及び装置”ぐ研磨！、、、
ｆ、ダイヤ七〉・トをダイヤモンド製品Ｃ１”用いる
ことにより、前記［１的を達成１．ようｋするものて′
１））る、ｆ１用
ダイヤモンドの表向にレーザビームの側面を当接すると
、該表向は同時（，５−広い範囲に■Ｊリト−ザビーム
の熟、１：ネルギかり７ｊらハ、該表向の開門部分が除
去される。1-Step To Solve All Problems This invention provides a first step in which the side surface of a laser beam is brought into contact with the surface of a diamond; the laser beam is moved relatively along said surface. , and a laser beam generator:! 5 With respect to the axial direction of the laser beam / (no relative displacement in the approximately perpendicular direction)
Furthermore, by using Diamond's polishing apparatus consisting of a polishing machine, the method and apparatus described above can be applied.
By using the diamond product C1, the above-mentioned goal 1 can be achieved.
1)) When the side surface of the laser beam is brought into contact with the surface of the diamond for f1, the surface is simultaneously The outward opening part is removed.
史に、このレーザビームの側面を前記表面に沿っ又移動
さぜるとし〜ｆｌ：”−ムの移動軌跡か面状となり、カ
ンナで削られるＪ、づにしながら表面の開門部分が除去
される。Historically, when the side surface of this laser beam is moved again along the surface, the locus of movement becomes a plane, and the opening part of the surface is removed as it is scraped with a plane. .
このようにしで研磨したダイヤ七゛／ドを切削工具、メ
ス、ヒートタンクなどに利用Ｌ ”Ｃダイヤモンド製品
を形成゛する。Diamonds polished in this way are used for cutting tools, scalpels, heat tanks, etc. to form L"C diamond products.
実施的
この発明の実施的を添付１．Ａ而により説明１゛るが、
同一図面符号はくの名称も機能も同一”ζ′１ｔ）る。Practical Examples of the present invention are attached.1. There is an explanation according to A, but
The same drawing numbers have the same names and functions.
第１実施例を第１図、第２図、第２３図により説り］す
゛るが、この実施例は研磨する面が秋い場合の例７′あ
る。The first embodiment will be explained with reference to FIGS. 1, 2, and 23. However, in this embodiment, there is an example 7' in which the surface to be polished is deep.
メタンガスと水素カスを原ｆ４としてり−り放電プラズ
マシ゛エッｌ−ＣＶ Ｌ′）法にユリダイヤセンド１ざ
＝合成１１、’ｌ’ Ａ Ｇ ’Ｉ−−ザ装置を用いて
所定形状に１ＪＪｉｔｌｉする、第：！３しｊに示゛ツ
様に１．二のダイヤモンド１の表面１；１に１．−ヂ発
生装置、［０ｊ）Ｌ ｉｆ ＹＡＧレーザ装置３の１
．・−ガビー＝ム、４を照射する。 この時の間開角度
θは、設計研磨面、 Ｉ’ＪＩち、研磨完了時のダイヤ
モンド表面２１ｂ Ｉ：：、対して１５度にし、レーザ
ビーム４の■り而４ａか前記設計研磨面１１）と平行に
なるようにする。このＹ Ａ Ｇレーザ装置３のレーザ
ビーム４は焦点距離５０ ｍ ｍのし〉・ズ５にＪり集
束さ１する。 Ｘ〜）゛テーブル２を矢印２Ｙ方向に移
動して、ダイヤモンドの表面〕ａをレーザビーム４の側
面４ａに当接させると、第１図、第２図に示”を様にレ
ーザビーム４の側面４ａはダイヤモンドの全表面１ａに
接触して熱エネルギーを写える。そのため、ダイヤモン
ドの表面１ａの凹凸部分は除去され平担な面となる。Methane gas and hydrogen gas are taken as raw material f4 and synthesized using the discharge plasma etch method (CV L') method. No.:! 3. As shown in 1. 1 on the surface 1 of the second diamond 1; -di generator, [0j) L if YAG laser device 3-1
．．・- Gabby = Irradiate 4. The opening angle θ at this time is 15 degrees with respect to the designed polished surface, I'JI, the diamond surface 21b when polishing is completed, and the laser beam 4 is parallel to the designed polished surface 11). Make it so. A laser beam 4 of this YAG laser device 3 is focused at a focal length of 50 mm. X~) When the table 2 is moved in the direction of the arrow 2Y and the surface of the diamond a is brought into contact with the side surface 4a of the laser beam 4, the laser beam 4 is moved as shown in FIGS. The side surface 4a contacts the entire surface 1a of the diamond and reflects thermal energy.Therefore, the uneven portion of the surface 1a of the diamond is removed and becomes a flat surface.
第２実施例を第３図、第４図により説明するｆ））２こ
の実施例は研磨する而か１１ｆＢ長い場合の削°こ゛あ
る。前記第〕実施例のようにしマ、ｌ７−ＩＩ“ヒ′−
ム４の側面４ａをダイヤ％ ＞ｌ〜１の表向１ａ ｉ、
Ｔ、、、当接さぜた後、デーブノ；２を矢印五１力向、
即ち、ダイヤモンド］１′７）長手方向に移動するど２
該ｆセ面１，１は前記側面・４２１からの戸ユ不ルギを
吸収し、て第５図に示ず様（：、四部部分ｈ１除去され
、泪らかな研磨面となる。The second embodiment will be explained with reference to FIGS. 3 and 4 f)) 2 This embodiment requires polishing or cutting when the length is 11 fB. As in the above-mentioned Embodiment, the
The side surface 4a of the frame 4 is diamond%>1~1, the front side 1a i,
T... After contact, move the arrow 2 to the direction of the 51 force.
i.e. diamond] 1'7) moving in the longitudinal direction 2
The f-side surfaces 1, 1 absorb the turbulence from the side surfaces 421, and the four portions h1 are removed, resulting in a gently polished surface as shown in FIG.
この研磨面は、酌記設３１研麿面］；）ヒ一致［でいる
ことは勿論で゛ある。。Of course, this polished surface is consistent with the 31 polished surface of the cup. .
第３実施例を第ｂ Ｖ、第７図により説明−するが、こ
の実施例は第２実施例ζ（二ｉ−３ＩＩる研磨する而が
粗い場合の例°Ｃある。The third embodiment will be explained with reference to FIG.
第２実施□□□ｊの要領（′、ます７初めに、第１次の
研磨を（］って、第１次研磨面］（゛を形成する。The procedure for the second implementation □□□j (', box 7 First, perform the first polishing () to form the first polished surface] ().
次にテーブル２を矢印２Ｙ方向に所定型、例えば、３０
Ｉ）ｍ移動させてレーザビーム４の側面４ａを第１次研
磨面ＩＣに当接させ、ン”−プル２を第４（７１に小す
様に、矢印Ｘ１方向に移動さぜて第２次のｌｉＲ麿や行
い、設計研磨面１ｂが表面となるようにする。なお、研
磨する面が更に粗い場合に（Ｊ、前記要領で複数回の研
磨をイ■い設計研磨面］ｂが表面になるよつにする。Next, the table 2 is moved in the direction of the arrow 2Y to a predetermined shape, for example, 30mm.
I) Move the side surface 4a of the laser beam 4 by m to bring it into contact with the primary polishing surface IC, and move it in the direction of the arrow X1 to reduce the pull 2 to the fourth (71) Next, make sure that the designed polished surface 1b becomes the surface.If the surface to be polished is even rougher, (J, design polished surface 1b should be polished multiple times in the same manner as above) b is the surface. Make it happen.
第４実施例を第８図−第１１図により説明するが、この
実施例は研磨する面が広い場合の例である。 第２実絶
例の要領で第８図、第９１Ａに不づ様に、第１分割面Ｄ
Ｉを研磨した後テーブル２４矢印２Ｘ方向（：所定量、
例えば、３００ ）、ｆ ｔａ 移動し１、レーザビー
ムの側面４ａを第２力割面Ｉ−）２に当接せしめる。そ
して、チー・プル２を矢印Ｘ２方向に移動させて第２分
割面１３２を研磨する。 この様な工程を繰り返して各
分割面り、 −Ｄ、の研磨を行い、ダイヤモ〉・ドの表
面１ａの全面が設計研磨面１ｂと一致するようにする。The fourth embodiment will be explained with reference to FIGS. 8 to 11, and this embodiment is an example in which the surface to be polished is wide. In the same manner as in the second example, the first dividing plane D is shown in FIG. 8 and 91A.
After polishing I, polish the table 24 in the direction of arrow 2X (: predetermined amount,
For example, 300), f ta is moved 1, and the side surface 4a of the laser beam is brought into contact with the second force splitting plane I-)2. Then, the Q-pull 2 is moved in the direction of arrow X2 to polish the second dividing surface 132. These steps are repeated to polish each divided surface -D so that the entire surface 1a of the diamond matches the designed polished surface 1b.
第５実施ＰＡｅｉ１２図〜第１５図により説明するが、
この実施例は第４実施例における研磨する面が粗い場合
の例である。This will be explained with reference to 5th implementation PAei Figures 12 to 15,
This embodiment is an example in which the surface to be polished is rough in the fourth embodiment.
第４実施例の要領で、まず初めに第１次の研磨を行な・
）で第１次研磨面を形成する。First, perform the first polishing in the same manner as in the fourth embodiment.
) to form the primary polished surface.
そして、テーブル２ケ矢印２Ｙ方向に所定量、％１えは
、３０μ諧移動させてレーザビームの側面４ａを第１次
研磨面に当接させ、テーブル２を矢印Ｘ２方向に移動さ
せる、
そして、第４実施 的の要領で各分割面り、−＋、：）
ａの研磨を行い、ダイヤモンドの表面１ａの全面が設計
研磨面１ｂと一致するようにする。Then, the table 2 is moved in the direction of the arrow 2Y by a predetermined distance, %1 is 30μ, so that the side surface 4a of the laser beam comes into contact with the primary polishing surface, and the table 2 is moved in the direction of the arrow X2. 4th implementation Each division plane is divided in the same way as the target, -+, :)
A is polished so that the entire surface 1a of the diamond matches the designed polished surface 1b.
第０実施例を第１６図−第１９図により説明するが、こ
の実施例は設Ｍ１研磨面が曲面の酬である。 方形状の
ダイヤモンド１の表面１ａにレーザビーム４の側面４ａ
を当接せしめたｆ＆、Ｙ Ａ、 Ｇレーザ装置３の位置
制御装置１０を操作してレーザビームの側面４ａを矢印
Ａ１方向に移動させ、該側面の移動軌跡を曲面状にする
。The 0th embodiment will be explained with reference to FIGS. 16 to 19. In this embodiment, the M1 polished surface is a curved surface. A side surface 4a of a laser beam 4 is attached to a surface 1a of a rectangular diamond 1.
The position control device 10 of the f&, YA, G laser device 3 brought into contact is operated to move the side surface 4a of the laser beam in the direction of arrow A1, making the locus of movement of the side surface curved.
そうすると、第１６図に示すように、前記移動軌跡に沿
ってダイヤモンドの表面１ａが研磨され第１次研磨面Ｉ
Ｃが形成される。Then, as shown in FIG. 16, the surface 1a of the diamond is polished along the movement trajectory and the first polished surface I
C is formed.
次に、ＹＡＧレーザ装置３の位置制御装置１０を操作し
てレーザビームの側面４ａを前記第１次研磨面ＩＣに３
接せしめた後該四面−４ａを矢印Ａ２力向に移動させ、
該側面の移動軌跡を曲面状にする、
そうすると、第１７ｉＡに示すよう（こ２酌記科動軌跡
に沿−）で第２次研磨面１ｄが形成さノ１−る６更に）
“ＡＧレーサ′装置３の位置制御装置１０操作し〔レー
ザビームの側１１ｊ４ａを前記第２、欠所磨面１ｄに当
接せしめた後該側面４ａを矢印Ａ３方向に移動させ、該
側面の移動軌跡を曲面状に−する、そう４ると、第１８
図に示すように、前記科動勅跡に沿って設計？ｉｌＴ磨
面１ ｂが形成される。Next, the position control device 10 of the YAG laser device 3 is operated to direct the side surface 4a of the laser beam to the first polishing surface IC.
After making contact, move the four surfaces -4a in the direction of arrow A2,
The movement locus of the side surface is made into a curved surface shape. Then, the second polished surface 1d is formed as shown in No. 17iA (along this locus of movement).
The position control device 10 of the AG laser device 3 is operated to bring the laser beam side 11j4a into contact with the second defect polishing surface 1d, and then the side surface 4a is moved in the direction of arrow A3; Make the locus curved, so 4, the 18th
As shown in the figure, is it designed along the lines of the imperial edict? An ilT polished surface 1b is formed.
第２実施例〜第５実施例においては、）′Ａ０レーザ装
置３を固定しダイＡ−モ〉′ド１を移動しながら研磨す
る方法につい〔述べたが、その逆即ち、前者３を移動し
後打１を固定しでも良いことは勿論である。In the second to fifth embodiments, the method of polishing while fixing the A0 laser device 3 and moving the die A-mode 1 was described. Of course, it is also possible to fix the second hit 1.
また、前述のようにしてダイヤモンドを研磨した後、心
で来の１とも擦り法」により更に研磨して（＋良いにの
ように〕゛ると、研磨時間を短縮て゛きると共に研磨面
がより滑らかなしのたなる。 史に、デープル２上のダ
イヤモン１１をチャンバ１】内に入れ、該チャンバ内を
真空に１、たり、または、酸素、空気、アルゴンのいず
れかの雰囲気カスａｆチャンバ〕１内に、供給して雰囲
気を形成しなから研磨作業を行っても良い。本発明のタ
イヤセンドの研磨方法に」、り研磨さ？Ｃたダイヤモン
ドは、切削用バイト、フラ・イス（フライカッタ）、平
面切削用力／夕、メス、ｔ： −１−シンク、篭手基板
材料などへ利用される。第２０図は、第゛７実施例を示
す図で、この′に旋削は、研磨ダイヤモンドを直方体形
ヒ１−シシク２０に用いた場合の関である。In addition, after polishing the diamond as described above, if you polish it further using the ``Kinoderu 1 Tomo Rubbing Method'' (as in ``Yoini''), the polishing time will be shortened and the polished surface will be smoother. In the history, the diamond 11 on the double 2 was placed in the chamber 1), and the chamber was vacuumed, or an atmosphere of oxygen, air, or argon was placed in the AF chamber 1. It is also possible to perform the polishing work after forming an atmosphere by supplying the diamond to the tire send polishing method of the present invention. , plane cutting force/force, scalpel, t: -1- It is used for sinks, gauntlet substrate materials, etc. Fig. 20 is a diagram showing the seventh embodiment. This is the seki when used in the form hi1-shishiku20.
ヒー１へシンク２０のダイヤモンド】の下面は接着層］
、 ｅ＋ ａを介して銅部材］５に固定され、まノ、二
、その上向は接着層］、 ６ ｂを介して熱発生源１７
に固定されている。】Ｓは接尋線、１９は接触子、をそ
ノ１ぞれ示ず。The bottom surface of the diamond of Heat 1 to Sink 20 is an adhesive layer]
, e+ fixed to the copper member 5 via a, and an adhesive layer above it], 6 a heat generating source 17 via b
is fixed. ] S is the tangent line, 19 is the contact, and neither is shown.
第２４図に示す第８実施例は、前記方法及び装置により
研磨したダイヤモンドをフライスに用いた場合の例て′
ある。研磨されたダイヤ尤ンドチ・ノブ４２＋、′１、
フライスの刃４０の刃先４１に固着されている。The eighth embodiment shown in FIG.
be. Polished diamond tip knob 42+,'1,
It is fixed to the cutting edge 41 of the milling cutter blade 40.
第９実施例を第２１ＬＡ、第２２図（、゛より説明する
が、この実施例はダイヤモンドの研磨置方により研磨Ｉ
７プ、こダイヤモンドを切削用パイ（・に用いた場六の
酎て′ある。The ninth embodiment will be explained from FIG. 21LA and FIG.
7. This diamond was used to make a cutting pie.
アーク放電〕′ラズマ三、゛エッｌ−ＣｖＤ ｆにより
厚さ３００μ国のダイヤモンド薄板Ｂを形成Ｌ７、該薄
板８をデープル２に載置し、た後バイブＦ）により吸引
し、て該薄板Ｂをテーブル２に吸塵さぜる。（して、Ｙ
ＩＩｉｌボールわじ３０を回転させてテーブル２を矢印
２）′ブＪ向に移動させるとともにプリズム３］を調整
して５レーザビームの照射角度θを設計研磨面かｔ、１
５度にし、て、その側面４ａをダイヤモンドの表面に当
接させる、ぞしζ、し、−ザビームの焦点距離を変えな
がら照射し、Ｘ軸ボールねじ３２を回転さゼでデープル
２を矢印Ｘ１方向に移動させ、ダイヤモンド薄板Ｂを照
射方商に対し、で直角に、表面と平行に移動さゼる。こ
のとき、図示しない調節手段によりレーザビーム４の側
面４ｄと設ｇ１研磨面とは、常に当接°４るように調節
される。Arc discharge]' Lasma 3, ゛Ell-CvD f Form a diamond thin plate B with a thickness of 300μ L7, place the thin plate 8 on the daple 2, and then suction it with a vibrator F). Vacuum the dust onto table 2. (And then Y
Rotate the ball wand 30 to move the table 2 in the direction of the arrow 2)' and adjust the prism 3 to adjust the irradiation angle θ of the laser beam to the designed polishing surface or t, 1
5 degrees, bring the side surface 4a into contact with the surface of the diamond, then irradiate while changing the focal length of the beam, rotate the X-axis ball screw 32, and move the diamond 2 in the direction of the arrow X1. The thin diamond plate B is moved perpendicularly to the irradiation direction and parallel to the surface. At this time, the side surface 4d of the laser beam 4 and the polishing surface g1 are adjusted by an adjusting means (not shown) so that they always come into contact with each other by 4 degrees.
このようにして、ダイヤモンドＢの表面は、設計研磨面
となり、 ＃ｌ”、＋かなずくい面２０が形成されるｉ
ｉ欠ｉ”、Ｘ１１１１ボー）Ｌねし、３２．３３．Ｙ軸
木−／１１−ｗじ３０を駆動し、てテーブル２の位置を
調節すると共にプリズム３１の角度の調整を行いレーザ
ビーム４をダイ−・１−ンドの表面に垂直に間開する。In this way, the surface of diamond B becomes a designed polished surface, and #l'', + kanazu cutting face 20 is formed i
32. 33. Y-axis tree -/11-w 30 is driven to adjust the position of the table 2 and the angle of the prism 31, and the laser beam 4 is adjusted. are spaced perpendicularly to the surface of the die.
このようにすると、垂直面から７度の傾きを持つように
ｌ；ＩＪ １４＋７されるので１．二の性質を利用し、
てレーザビームの垂直度を調節Ｉ２ながら刃先の先端角
、逃げ角か所定角度となるように焦点距離を変ｉ−ｆ
Ｉこレーザビームを複数回走査し、て切断し、この切曲
面を逃げ面ｚ１にする。レーザ加工後ダイヤモンド薄板
〈パイトチリブ）Ｂを超硬合金て′形成した支持角２４
に、 Ａ４−Ｃｕ−Ｔｉ合金などのろう祠を用いてろう
ｒ・１け２３し、切削用バイトを形成づる。このパイト
チシブＢをイ・１けた超精密研削加］−機によりＴルミ
ニｒ７ム台金の切削実験を行ったところ、ろうｆｔＨ２
３の剥離も生ぜず、刃先の欠損も観察されｌかった。こ
れは、ダイヤモンドの厚さはろう付け２３部分の厚さに
比べてかなりηくな−）ていて、切削時のろう付は部分
の変形がダイヤモンドに及は゛す影響も小さく、かつ、
ダイ八・センドの結晶粒界も強く結合し、ていて刃先か
砿壊さｈ惰くなっているた約と考えらノｌる。If you do this, it will be 1;IJ 14+7 so that it has an inclination of 7 degrees from the vertical plane, so 1. Taking advantage of the second nature,
Adjust the perpendicularity of the laser beam with I2, and change the focal length so that the tip angle and clearance angle of the cutting edge are at a predetermined angle.
The laser beam is scanned several times and cut, and this cut surface is used as the flank surface z1. Support angle 24 made of diamond thin plate (Pito Chirib) B with cemented carbide after laser processing
Next, use a soldering pad made of A4-Cu-Ti alloy or the like to solder 1 piece 23 to form a cutting tool. When we conducted a cutting experiment on the T-luminium R7 base metal using a one-digit ultra-precision grinding machine, we found that the wax ftH2
No peeling occurred, and no damage to the cutting edge was observed. This is because the thickness of the diamond is considerably smaller than the thickness of the brazed portion 23), and when brazing during cutting, deformation of the portion has little effect on the diamond, and
The grain boundaries of Daihachi Send are also strongly bonded, making it difficult for the cutting edge to break.
また、刃先２２のすくい面２０、逃げ而２】のどちら（
こついても摩耗は認ｙ）られなか゛＞フご６なお、上記
実施例て′は支持角２４に超硬合金を用いたが支持角の
材質はこれに限定されるものではなく２例ｊば、他の一
金属を用いて（、良い。 また、気相合成ダイヤモンド
の合成には、前記ＣＶＤ法のはか５副ｈ−子穴プラズマ
発生装置（特願平１−６７９９９号参照）などが用いら
れる。Also, which of the rake face 20 of the cutting edge 22 and the relief 2] (
No wear was observed even when the support angle 24 was hardened. Although the support angle 24 was made of cemented carbide in the above example, the material of the support angle is not limited to this. In addition, for the synthesis of vapor-phase synthetic diamond, a fifth subhole plasma generator (see Japanese Patent Application No. 1-67999), etc., can be used to synthesize diamond. is used.
発明の効果
この発明に係るダイヤモンドの研磨方法は、以上のよう
に樽成巳たので、レーザビームの側面がダイヤモンドの
表面と広い範囲にｔ）ｆ：す、固結に接触し、て熱エネ
ルギをりズーるとともにその熱エネルギが与えられる部
分が移動し、該部分の移動軌跡が面状どなる。従って、
効率良くダイＡ“モ〉ドの研磨作業を行′）、７とが出
来る。Effects of the Invention The diamond polishing method according to the present invention has been completed as described above, so that the side surface of the laser beam comes into contact with the surface of the diamond in a wide range, and generates thermal energy. As the object moves, the part to which the thermal energy is applied moves, and the locus of movement of the part changes in planar shape. Therefore,
Polishing work of die A mode can be carried out efficiently.
そのため、この研磨方法枝ひ装置にＪり研磨すると、切
削バイトなとのダイヤモ〉ｌ−製品を安価にジーること
かできる。Therefore, by using this polishing method and polishing device, diamond products such as cutting tools can be manufactured at low cost.
第】同−第２図Ｃ」この発明の第１実施列分示４゛Ｌ／
？Ｉテ、第１図は正面Ｖ、第２図ハ平１１ｊｉ １４、
第３図−１第５図はこの発明の第′：：実施例を示す図
て゛、第３図は正面図、第・４図は平面図、第５図は第
３図のｖ−ｖ線縦断面図、第６図〜第７ｆａはこの発明
の第３実施例を示す図ζ′、第６ＵＡは正面図、第７図
は第６図の池の状態を示す正面図、第８１７１〜第１１
図はこの発明の第４実施例を示す図で、第８図は正面図
、第９図は平面図、第１０図は第８図の池の状態をｉ）
＼ず正面図、第１１図は第９図の他の状態を示す平面図
、第１２図−へ−第１５図はこの発明の第５実施例を示
す図で、第に２図は正面図、第１３図は平１１１Ｋ、第
１４図は第１２図の他釣状態を示す正面図第】５図は第
１３図の他の状態Ｐ示づ正面図、１６間〜第１９ＵＡは
この発明の第６実施例！−η、ず図で、第１６ＵＡは正
面図、第１７図、第】８図はそれぞれ第１（）図の池の
状態を示す正面図第１９図は平面図、第２０ＵＡは第７
実施例を示′を縦断面図、第２１図、第２２図は第９実
施岡を示′１′図Ｃ１第２１ＵＡはダイヤモンド切削バ
イｌ−の斜視図 第２２図はダイヤモンド研磨装置の斜
視図、第２３図は池の実施例を示す図、第２４［Ａは第
８実施例を示す要部平面図、である。
ダイヤモンド
ダイヤモンドの表面
設計研磨面
）”ＡＧレーザ装置
１、−ザビーム
レーザビー人の側面
第１図
第５図
第７図
第１６図
第１７図
第２１図
第２図
第６図
第２４図
第１８図
第１９図
第２０図
第２２図
第２３図
ダイヤモンド
一］−
ｘ
・に
続
ネ南
ｊｌ−二
芸す
平成２年
３月２８Ｅ１
特許局−長官
吉 １’ｔｌ 文 毅 殿
平成２年３月２２１１提出の特許願
発明の名称
ダイヤモンドの研磨方法及び装置
並びに（ノーを利用し、たダイヤモンド製品補正をする
台
事件との関ｆ系 特許出願人
山［」県中野田１１’ｉ大字小野［Ｂ ６２７６番地（
０２４）小野ＩＩＩセメント株式会ｔ１人
東京都中央国１１本橋２−６−３齋ＫＭ特許ヒル置
（２７１＞４４８７６４８４０４８５ｆ王所
名村、
代 理
住所
図ｍ１
補正の内容
別紙の通りNo. 4 - Fig. 2C: First implementation column of this invention
? Ite, Figure 1 is front view V, Figure 2 is Hahei 11ji 14,
Fig. 3-1 Fig. 5 shows an embodiment of the present invention. Fig. 3 is a front view, Figs. Vertical sectional views, FIGS. 6 to 7 fa are views ζ′ showing the third embodiment of the present invention, 6 UA is a front view, and FIG. 7 is a front view showing the state of the pond in FIG. 11
The figures show a fourth embodiment of the invention, in which Fig. 8 is a front view, Fig. 9 is a plan view, and Fig. 10 shows the state of the pond in Fig. 8.
11 is a plan view showing another state of FIG. 9, FIG. 12--FIG. 15 is a view showing the fifth embodiment of the present invention, and FIG. 2 is a front view , FIG. 13 is a front view showing the flat 111K, FIG. 14 is a front view showing a fishing state other than that shown in FIG. 12, FIG. 5 is a front view showing another state P of FIG. Sixth example! In the diagrams, 16UA is a front view, FIGS.
Fig. 21 and 22 show the ninth embodiment; Fig. C1, No. 21UA, is a perspective view of the diamond cutting tool l-; Fig. 22 is a perspective view of the diamond polishing device. , FIG. 23 is a diagram showing an embodiment of the pond, and FIG. 24 is a plan view of the main part showing the eighth embodiment. Diamond Diamond Surface Design Polished Surface) AG Laser Device 1, - The Beam Laser Beam Side View Fig. 18 Fig. 19 Fig. 20 Fig. 22 Fig. 23 Diamond 1 - Name of patent application invention filed on February 22, 11 Diamond polishing method and device (Using No. 2013-2011) and its relationship with the case of making corrections to diamond products B 6276 (
024) Ono III Cement Co., Ltd. t1 person Tokyo Chuokuni 11 Honbashi 2-6-3 Sai KM patent hill location
(271>448764840485fOshonamemura, proxy address map m1 Amendment contents as attached
Claims (19)
せしめる工程；該側面を設計研磨面に沿って相対的に移
動せしめる工程；からなることを特徴とするダイヤモン
ドの研磨方法(1) A diamond polishing method characterized by comprising: a step of bringing a side surface of a laser beam into contact with the surface of the diamond; a step of relatively moving the side surface along a designed polishing surface;
第１記載のダイヤモンドの研磨方法(2) The diamond polishing method according to claim 1, wherein the designed polishing surface is a flat surface.
第１記載のダイヤモンドの研磨方法(3) The diamond polishing method according to claim 1, wherein the designed polished surface is a curved surface.
せしめ、該側面を設計研磨面に沿って相対的に移動せし
める第１次研磨工程；前記レーザビームの側面を肉厚方
向に移動して研磨面に当接せしめ、該レーザビームの側
面を設計研磨面に沿って相対的に移動せしめる第２次研
磨工程；とからなることを特徴とするダイヤモンドの研
磨方法(4) First polishing step of bringing the side surface of the laser beam into contact with the surface of the diamond and moving the side surface relatively along the designed polishing surface; polishing by moving the side surface of the laser beam in the thickness direction A second polishing step of bringing the laser beam into contact with the surface and relatively moving the side surface of the laser beam along the designed polishing surface;
徴とする請求項第４記載のダイヤモンドの研磨方法(5) The diamond polishing method according to claim 4, wherein the second polishing step is repeated a plurality of times.
せしめ、該側面を設計研磨面に沿って相対的に移動せし
める第１分割研磨工程；前記レーザビームの側面を水平
方向に移動して残余の表面に当接せしめ、該側面を設計
研磨面に沿って相対的に移動せしめる第２分割研磨工程
；とからなることを特徴とするダイヤモンドの研磨方法(6) A first divided polishing step in which the side surface of the laser beam is brought into contact with the surface of the diamond and the side surface is moved relatively along the designed polishing surface; the side surface of the laser beam is moved horizontally to remove the remaining a second divided polishing step of bringing the side surface into contact with the surface and relatively moving the side surface along the designed polishing surface;
特徴とする請求項第６記載のダイヤモンドの研磨方法(7) The diamond polishing method according to claim 6, wherein the second divided polishing step is repeated a plurality of times.
せしめ、該側面を設計研磨面に沿って相対的に移動せし
める研磨工程と、前記レーザビームの側面を水平方向に
移動して残余の表面に当接せしめ、該側面を設計研磨面
に沿つて相対的に移動せしめる研磨工程、とからなる第
１次研磨面形成工程；前記レーザビームの側面を肉厚方
向に移動して前記第１研磨面に当接せしめ、該側面を設
計研磨面に沿って相対的に移動せしめる研磨工程と、前
記レーザビームの側面を水平方向に移動して残余の研磨
面に当接せしめ、該側面を設計研磨面に沿って相対的に
移動せしめる研磨工程と、からなる第２次研磨面形成工
程；からなることを特徴とするダイヤモンドの研磨方法(8) A polishing process in which the side surface of the laser beam is brought into contact with the surface of the diamond and the side surface is moved relatively along the designed polishing surface, and the side surface of the laser beam is moved horizontally to touch the remaining surface. a polishing step of bringing the side surface into contact with the designed polishing surface and relatively moving the side surface along the designed polishing surface; moving the side surface of the laser beam in the thickness direction to form the first polishing surface; a polishing process in which the side surface of the laser beam is brought into contact with the remaining polishing surface and the side surface is moved relatively along the designed polishing surface; A method for polishing a diamond, comprising: a polishing step of relatively moving along the diamond; and a second polishing surface forming step.
とを特徴とする請求項第８記載のダイヤモンドの研磨方
法(9) The diamond polishing method according to claim 8, wherein the second polishing surface forming step is repeated a plurality of times.
接せしめながら、該側面を相対的に円弧状に移動せしめ
る仮研磨工程；該レーザビームの側面を肉厚方向に移動
して研磨面に当接させ、該側面を相対的に円弧状に移動
せしめる本研磨工程；とからなるダイヤモンドの研磨方
法(10) Temporary polishing step in which the side surface of the laser beam is brought into contact with the surface of the diamond and the side surface is relatively moved in an arc; the side surface of the laser beam is moved in the thickness direction and brought into contact with the polished surface. and a main polishing step of moving the side surface relatively in an arc shape;
とするダイヤモンドの研磨方法(11) A diamond polishing method characterized in that the main polishing step is repeated multiple times.
方向に対して略直角方向に相対的に変位するテーブル；
からなるダイヤモンドの研磨装置(12) A laser beam generator; a table that is relatively displaced in a direction approximately perpendicular to the axial direction of the laser beam;
Diamond polishing equipment consisting of
方向に対して略直角方向に相対的に変位するテーブル；
該レーザビームの軸方向とテーブルの移動方向との間隔
を調整する手段；とからなるダイヤモンドの研磨装置(13) A laser beam generator; a table that is relatively displaced in a direction substantially perpendicular to the axial direction of the laser beam;
A diamond polishing device comprising: means for adjusting the distance between the axial direction of the laser beam and the moving direction of the table;
接せしめ、該側面を前記表面に沿って相対的に移動せし
めて形成された研磨ダイヤモンド；該研磨ダイヤモンド
を切削工具に用いたダイヤモンド製品(14) A polished diamond formed by bringing the side surface of a laser beam into contact with the surface of the diamond and moving the side surface relatively along the surface; a diamond product using the polished diamond as a cutting tool
接せしめ、該側面を前記表面に沿って相対的に移動せし
めて形成された研磨ダイヤモンド；該研磨ダイヤモンド
をヒートシンクに用いたダイヤモンド製品(15) Polished diamond formed by bringing the side surface of a laser beam into contact with the surface of the diamond and moving the side surface relatively along the surface; a diamond product using the polished diamond as a heat sink
る請求項第１４記載のダイヤモンド製品(16) The diamond product according to claim 14, wherein the cutting tool is a cutting tool.
請求項第１４記載のダイヤモンド製品(17) The diamond product according to claim 14, wherein the cutting tool is a milling cutter.
にろう付けされていることを特徴とする請求項第１６記
載のダイヤモンド製品(18) The diamond product according to claim 16, wherein the diamond tip of the cutting tool is brazed to a cemented carbide.
と逃げ面とを備えていることを特徴とする請求項第１６
記載のダイヤモンド製品(19) Claim 16, characterized in that the diamond tip of the cutting tool has a rake face and a flank face.
Diamond products listed
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2072692A JPH03272810A (en) | 1990-03-22 | 1990-03-22 | Method and apparatus for grinding diamond and diamond article utilizing the same |
| EP91103604A EP0446811A1 (en) | 1990-03-10 | 1991-03-08 | Method and apparatus for grinding diamond and diamond product using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2072692A JPH03272810A (en) | 1990-03-22 | 1990-03-22 | Method and apparatus for grinding diamond and diamond article utilizing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03272810A true JPH03272810A (en) | 1991-12-04 |
Family
ID=13496673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2072692A Pending JPH03272810A (en) | 1990-03-10 | 1990-03-22 | Method and apparatus for grinding diamond and diamond article utilizing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03272810A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09225659A (en) * | 1996-01-05 | 1997-09-02 | Lazare Kaplan Internatl Inc | Mark forming system by laser |
| WO1998015380A1 (en) * | 1996-10-08 | 1998-04-16 | The University Of Arkansas | Process and apparatus for sequential multi-beam laser processing of materials |
| CN1302890C (en) * | 2005-03-18 | 2007-03-07 | 北京工业大学 | Polishing method and device for sphere high quality large area diamond thick film |
| JP2012148398A (en) * | 2010-12-26 | 2012-08-09 | Mitsubishi Materials Corp | Carbon film-coated end mill and manufacturing method therefor |
| JP2013202657A (en) * | 2012-03-28 | 2013-10-07 | Mitsubishi Materials Corp | Laser machining method and laser machining apparatus |
| JP2013220525A (en) * | 2012-04-19 | 2013-10-28 | Sumitomo Electric Hardmetal Corp | Cutting tool and manufacturing method of the same |
| WO2021199220A1 (en) * | 2020-03-30 | 2021-10-07 | 国立大学法人東海国立大学機構 | Blade edge processing device and cutting device |
| JP2022069523A (en) * | 2020-03-30 | 2022-05-11 | 国立大学法人東海国立大学機構 | Cutting device |
| JP2022128523A (en) * | 2020-03-30 | 2022-09-01 | 国立大学法人東海国立大学機構 | Cutting device |
-
1990
- 1990-03-22 JP JP2072692A patent/JPH03272810A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09225659A (en) * | 1996-01-05 | 1997-09-02 | Lazare Kaplan Internatl Inc | Mark forming system by laser |
| JP3238875B2 (en) * | 1996-01-05 | 2001-12-17 | ラザール カプラン インターナショナル，インコーポレイティド | Apparatus and method for micro-engraving by laser energy |
| WO1998015380A1 (en) * | 1996-10-08 | 1998-04-16 | The University Of Arkansas | Process and apparatus for sequential multi-beam laser processing of materials |
| CN1302890C (en) * | 2005-03-18 | 2007-03-07 | 北京工业大学 | Polishing method and device for sphere high quality large area diamond thick film |
| JP2012148398A (en) * | 2010-12-26 | 2012-08-09 | Mitsubishi Materials Corp | Carbon film-coated end mill and manufacturing method therefor |
| JP2013202657A (en) * | 2012-03-28 | 2013-10-07 | Mitsubishi Materials Corp | Laser machining method and laser machining apparatus |
| JP2013220525A (en) * | 2012-04-19 | 2013-10-28 | Sumitomo Electric Hardmetal Corp | Cutting tool and manufacturing method of the same |
| WO2021199220A1 (en) * | 2020-03-30 | 2021-10-07 | 国立大学法人東海国立大学機構 | Blade edge processing device and cutting device |
| JPWO2021199220A1 (en) * | 2020-03-30 | 2021-10-07 | ||
| JP2022069523A (en) * | 2020-03-30 | 2022-05-11 | 国立大学法人東海国立大学機構 | Cutting device |
| JP2022128523A (en) * | 2020-03-30 | 2022-09-01 | 国立大学法人東海国立大学機構 | Cutting device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6773539B2 (en) | Wafer generation method | |
| JP6723877B2 (en) | Wafer generation method | |
| JP6935224B2 (en) | Wafer generation method | |
| JP2017005008A (en) | Wafer production method | |
| KR101729804B1 (en) | Cutting tool | |
| JP6928248B2 (en) | Diamond coated rotary cutting tool | |
| CN111203652A (en) | Wafer generation method | |
| JP2001161701A (en) | Atomically sharp edged cutting blade and method of manufacturing the same | |
| CN107127583A (en) | Ultrasonic cutting is applied to the equipment and processing method in powder feeding formula increase and decrease material composite manufacturing | |
| JPH03272810A (en) | Method and apparatus for grinding diamond and diamond article utilizing the same | |
| CN110461514A (en) | The manufacturing method of cutting element | |
| CN102294507B (en) | End mill and manufacturing method of same | |
| JP7500261B2 (en) | Wafer Production Method | |
| JP2006281386A (en) | Hard sintered body cutting tool and its manufacturing method | |
| JP2003025118A (en) | Diamond tool for cutting | |
| JP4466956B2 (en) | Diamond tool manufacturing method | |
| CN105081782B (en) | The processing method of hard material | |
| JPS61152345A (en) | Machining method in combine use with laser beam | |
| JP2020013962A (en) | Processing method of LED wafer | |
| JP2010135537A (en) | Method of processing wafer | |
| JPH08294805A (en) | Tip for cutting tool | |
| JPH04331800A (en) | Method of smoothing diamond surface, device therefor and diamond product taking advantage of the same method | |
| CN112296408B (en) | Processing equipment and processing method for surface heat dissipation structure of laminated AlN substrate | |
| JP2019212761A (en) | Chamfering method | |
| JPH05180739A (en) | Preparing method of sample for observation by electron microscope |