JPH03257129A - 半導体装置のボンディング用金合金線 - Google Patents
半導体装置のボンディング用金合金線Info
- Publication number
- JPH03257129A JPH03257129A JP2054610A JP5461090A JPH03257129A JP H03257129 A JPH03257129 A JP H03257129A JP 2054610 A JP2054610 A JP 2054610A JP 5461090 A JP5461090 A JP 5461090A JP H03257129 A JPH03257129 A JP H03257129A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bonding
- gold alloy
- alloy wire
- bonding wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910001020 Au alloy Inorganic materials 0.000 title claims abstract description 30
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 239000003353 gold alloy Substances 0.000 title claims description 27
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 7
- 229910052796 boron Inorganic materials 0.000 claims abstract description 5
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 5
- 229910052742 iron Inorganic materials 0.000 claims abstract description 5
- 229910052718 tin Inorganic materials 0.000 claims abstract description 5
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 4
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 4
- 229910052777 Praseodymium Inorganic materials 0.000 claims abstract description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 4
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 4
- 229910052745 lead Inorganic materials 0.000 claims abstract description 3
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical group [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 abstract description 3
- 229910052772 Samarium Inorganic materials 0.000 abstract 1
- 238000007665 sagging Methods 0.000 abstract 1
- 238000000465 moulding Methods 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 101001077673 Homo sapiens Voltage-gated hydrogen channel 1 Proteins 0.000 description 1
- 102100025443 Voltage-gated hydrogen channel 1 Human genes 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/4809—Loop shape
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2924/207—Diameter ranges
- H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
Landscapes
- Engineering & Computer Science (AREA)
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- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
め要約のデータは記録されません。
Description
い、例えば140〜180茄の低いループ高さで半導体
素子と外部リードとのボンディングを行なった場合にも
、特にループ高さのバラツキを著しく抑制することがで
きる金合金線に関するものである。
記載される通りの、 La、Ce、Pr、Nd、およびS+nからなるセリウ
ム族希土類元素のうちの1種または2種以上: 3〜l
ooppm。
上:1〜80ppm、 を含有し、残りがAuと不可避不純物からなる組成を有
する半導体装置のボンディング用金合金線を提案した。
いICカードや、vsopおよびTSOPなどの薄型パ
ッケージの普及はめざましく、これには、例えば140
〜180虜といった低いループ高さでのボンディングが
要求されるが、上記の従来金合金線はじめ、その他多く
の従来金合金線の場合、これを薄型パッケージのボンデ
ィングワイヤとして用いた場合、ループ高さのバラツキ
を小さくすることかできず、この結果樹脂モールド後の
パッケージ表面へのループ露出がしばしば発生し、高い
製品歩留りを確保することができないのか現状である。
いループ高さが要求される薄型パッケージのボンディン
グワイヤとして用いた場合、ボンディング後のループ高
さのバラツキを小さくすることができる金合金線を開発
すべく、上記の従来金合金線に着目し研究を行なった結
果、上記の従来金合金線に、合金成分として、 B、Sn、Ni、Fe、Co、Ir、Pb。
1〜1100pp、を含有させると、この結果の金合金
線は、結晶粒径か均一化するので、低いループ高さを維
持しつつ、ループ高さのバラツキが著しく抑制されるよ
うになり、さらに高温強度、ボンディング後のループ変
形の有無、および樹脂モールド時のループ流れについて
は上記従来金合金線と同等のすぐれた性質を具備すると
いう研究結果を得たのである。
あって、 La、Ce、Pr、Nd、およびSmからなるセリウム
族希土類元素のうちの1種または2種以上:1〜110
0ppm、 Ca、Be、およびGeのうちの1種または2種以上=
1〜1100ppm、 B、Sn、Nl、Fe、Co、Ir、PbTi Zr
、およびPdのうちの1種または2種以上;1〜110
0pp、 を含有し、残りがAuと不可避不純物からなる組成を有
する半導体装置のボンディング用金合金線に特徴を有す
るものである。
限定した理由を説明する。
る作用かあるが、その含有量が1ppH1未満ては所望
の強度向上効果か得られず、一方その含有量が1100
ppを越えると線が脆化するようになることから、その
含有量を1〜lODppmと定めた。
いて、線の軟化温度を高め、もってボンディング時の線
自体の脆化および変形ループの発生、さらに樹脂モール
ド時のループ流れを抑制すると共に、ボンディングの接
合強度を高め、さらに常温および高温強度を一段と向上
させる作用があるが、その含有量が1 ppm未満ては
前記作用に所望の効果が得られず、一方その含有量が1
00ppHを越えると、脆化して線引加工性などが劣化
するようになるばかりでなく、ボンディング時の加熱温
度で結晶粒界破断を起し易くなることから、その含有量
を1〜100ppnと定めた。
Ti、Zr、およびPd これらの成分は、上記の通りセリウム族希土類元素と、
Ca、Be、およびGeとの共存において、線の結晶粒
径を均一化し、これによって低いループ高さを維持しつ
つ、ループ高さのバラツキか著しく抑制されるようにな
る作用を発揮するが、その含有量が1 ppm未満では
前記作用に所望の効果が得られず、一方その含有量が1
100ppを越えると、脆化して線引加工性などが低下
するようになることから、その含有量を1〜toopp
mと定めた。
明する。
をもった溶湯を調製し、鋳造した後、公知の溝型圧延機
を用いて圧延し、引続いて線引加工を行なうことにより
、直径: 0.025mmをI−iする本発明金合金線
1〜29および従来金合金線1〜13をそれぞれ製造し
た。
がボンディング時にさらされる条件に相当する条件、す
なわち250℃に20秒間保持した条件で高温引張試験
を行ない、破断強度と伸びを測定し、高温強度を評任し
た。
い、高速自動ボンダにて、特に薄型パッケージに対応さ
せる目的で、ループ高さを140〜180unに低くし
た状態でボンディングを行ない、ループ高さ、ループ高
さのバラツキ、ループ変形の有無、および樹脂モールド
後のループ流れ量をそれぞれ測定した。これらの測定結
果を第2表に示した。
、半導体素子Sと外部リードLを金合金線Wでボンディ
ングした場合のhをzltrl)I微:1を用いて測定
し、80個の測定値の平均値をもって表わし、ループ高
さのバラツキは、前記の80個のループ高さ測定値より
標準偏差を求め、3σの値で表わした。
Wを顕微鏡を用いて観察し、第1図に点線で示されるよ
うに金合金線が垂れ下がって半導体素子Sのエツジに接
触(エツジショート)している場合を「有」とし、接触
していない場合を「無」として判定した。
を直上からX線撮影し、この結果のx!!i!写真にも
とづいて4つのコーナ一部における半導体素子と外部リ
ードのボンディング点を結んだ直線に対する金合金線の
最大膨量を測定し、これらの平均値をもって表わした。
線1〜29は、いずれも140〜180−の低いループ
高さでのループ高さのバラツキが、従来金合金線1〜1
3に比してきわめて小さく、かつ従来金合金線1〜13
と同等の裔い高温強度をもち、さらに同しくループ変形
の発生かなく、樹脂モールド時のループ流れ量もきわめ
て小さく、現在許容最大値といわれている1100uよ
り小さい値を示していることが明らかである。
置のうち、特に低いループ高さが要求される薄肉パッケ
ージのボンディングワイヤとして用いた場合、ループ高
さのバラツキかきわめて小さいので、樹脂モールド後の
パッケージ表面にループが露出することがなく、さらに
高い高温強度をもつと共に、ボンディング時のループ変
形の発生がなく、かつ樹脂モールド時のループ流れも小
さいので、タブショートやエツジショートなどの不良発
生も著しく抑制されるようになることと合まって、製品
不良か激減し、歩留りの飛躍的向上をはかることができ
るなど工業上有用な特性を有するのである。
ある。 S・・・半導体素子 W・・・金合金線 L・・・外部リード
Claims (1)
- (1)La、Ce、Pr、Nd、およびSmからなるセ
リウム族希土類元素のうちの1種または2種以上:1〜
100ppm、 Ca、Be、およびGeのうちの1種または2種以上:
1〜100ppm、 B、Sn、Ni、Fe、Co、Ir、Pb、Ti、Zr
、およびPdのうちの1種または2種以上:1〜100
ppm、 を含有し、残りがAuと不可避不純物からなる組成を有
することを特徴とする半導体装置のボンディング用金合
金線。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2054610A JP2814660B2 (ja) | 1990-03-06 | 1990-03-06 | 半導体装置のボンディング用金合金線 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2054610A JP2814660B2 (ja) | 1990-03-06 | 1990-03-06 | 半導体装置のボンディング用金合金線 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03257129A true JPH03257129A (ja) | 1991-11-15 |
JP2814660B2 JP2814660B2 (ja) | 1998-10-27 |
Family
ID=12975511
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2054610A Expired - Fee Related JP2814660B2 (ja) | 1990-03-06 | 1990-03-06 | 半導体装置のボンディング用金合金線 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2814660B2 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6123786A (en) * | 1993-09-06 | 2000-09-26 | Mitsubishi Materials Corporation | Gold materials for accessories hardened with minor alloying components |
US6991854B2 (en) * | 2003-04-14 | 2006-01-31 | Mk Electron Co., Ltd. | Gold alloy bonding wire for semiconductor device |
WO2006057230A1 (ja) * | 2004-11-26 | 2006-06-01 | Tanaka Denshi Kogyo K.K. | 半導体素子用Auボンディングワイヤ |
EP1811556A1 (en) * | 2004-09-30 | 2007-07-25 | Tanaka Denshi Kogyo Kabushiki Kaisha | Wire bump material |
WO2007111248A1 (ja) * | 2006-03-24 | 2007-10-04 | Nippon Steel Materials Co., Ltd. | 半導体素子接続用金線 |
CN100394592C (zh) * | 2006-07-11 | 2008-06-11 | 中国印钞造币总公司 | 一种键合金丝及其制造方法 |
JP2008218994A (ja) * | 2007-02-06 | 2008-09-18 | Nippon Steel Materials Co Ltd | 半導体素子接続用金線 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5311715B2 (ja) | 2005-01-24 | 2013-10-09 | 新日鉄住金マテリアルズ株式会社 | 半導体素子接続用金線 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6179741A (ja) * | 1984-09-27 | 1986-04-23 | Sumitomo Metal Mining Co Ltd | ボンデイングワイヤ− |
JPS62228440A (ja) * | 1986-03-28 | 1987-10-07 | Matsuda Kikinzoku Kogyo Kk | 半導体素子ボンデイング用金線 |
JPS62290835A (ja) * | 1986-06-09 | 1987-12-17 | Mitsubishi Metal Corp | 半導体装置のボンデイングワイヤ用Au合金極細線 |
-
1990
- 1990-03-06 JP JP2054610A patent/JP2814660B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6179741A (ja) * | 1984-09-27 | 1986-04-23 | Sumitomo Metal Mining Co Ltd | ボンデイングワイヤ− |
JPS62228440A (ja) * | 1986-03-28 | 1987-10-07 | Matsuda Kikinzoku Kogyo Kk | 半導体素子ボンデイング用金線 |
JPS62290835A (ja) * | 1986-06-09 | 1987-12-17 | Mitsubishi Metal Corp | 半導体装置のボンデイングワイヤ用Au合金極細線 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6123786A (en) * | 1993-09-06 | 2000-09-26 | Mitsubishi Materials Corporation | Gold materials for accessories hardened with minor alloying components |
US6991854B2 (en) * | 2003-04-14 | 2006-01-31 | Mk Electron Co., Ltd. | Gold alloy bonding wire for semiconductor device |
EP1811556A1 (en) * | 2004-09-30 | 2007-07-25 | Tanaka Denshi Kogyo Kabushiki Kaisha | Wire bump material |
EP1811556A4 (en) * | 2004-09-30 | 2009-08-05 | Tanaka Electronics Ind | MATERIAL FOR BOSS OF WIRE |
WO2006057230A1 (ja) * | 2004-11-26 | 2006-06-01 | Tanaka Denshi Kogyo K.K. | 半導体素子用Auボンディングワイヤ |
WO2007111248A1 (ja) * | 2006-03-24 | 2007-10-04 | Nippon Steel Materials Co., Ltd. | 半導体素子接続用金線 |
US8415797B2 (en) | 2006-03-24 | 2013-04-09 | Nippon Steel & Sumikin Materials Co., Ltd. | Gold wire for semiconductor element connection |
CN100394592C (zh) * | 2006-07-11 | 2008-06-11 | 中国印钞造币总公司 | 一种键合金丝及其制造方法 |
JP2008218994A (ja) * | 2007-02-06 | 2008-09-18 | Nippon Steel Materials Co Ltd | 半導体素子接続用金線 |
Also Published As
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---|---|
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