JPH0325020B2 - - Google Patents
Info
- Publication number
- JPH0325020B2 JPH0325020B2 JP60000187A JP18785A JPH0325020B2 JP H0325020 B2 JPH0325020 B2 JP H0325020B2 JP 60000187 A JP60000187 A JP 60000187A JP 18785 A JP18785 A JP 18785A JP H0325020 B2 JPH0325020 B2 JP H0325020B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- gas
- reducing gas
- bonding
- cylindrical member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007789 gas Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 15
- 239000010953 base metal Substances 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 2
- 238000011946 reduction process Methods 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000112 cooling gas Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/786—Means for supplying the connector to be connected in the bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85053—Bonding environment
- H01L2224/85054—Composition of the atmosphere
- H01L2224/85065—Composition of the atmosphere being reducing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85053—Bonding environment
- H01L2224/85054—Composition of the atmosphere
- H01L2224/85075—Composition of the atmosphere being inert
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は卑金属ワイヤを用いたワイヤボンデイ
ング方法およびこれを実施する装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a wire bonding method using base metal wire and an apparatus for carrying out the same.
ICやLSIなどの半導体装置の製造工程には、例
えば半導体素子とリードとをワイヤで接続するる
ワイヤボンデイング工程がある。この作業は近時
自動装置により極めて高い能率で遂行されてお
り、金ワイヤを用いた方法が実用化されている。
このワイヤの材料も半導体素子の低コスト化に伴
いコスト高の要因となり金代替ワイヤを用いてボ
ンデイングすることが要望されている。その代表
的なものに銅ワイヤやアルミニウムワイヤを用い
ることが試みられているが、未だ実用化されてい
ない。特に銅などの卑金属ワイヤを用いた場合、
素子やリードフレームなどの被接合部材を載置す
るワークステージを加熱し、これらを200℃〜350
℃程度に昇温する必要があるため、この熱により
ワイヤが酸化され、ワイヤの先端と放電電極との
間でスパークしにくく、良好なボールが形成され
にくいことがあり、またウエツジボンデイングの
場合、被接合面に接合されにくく、いずれも接合
強度が不十分であるなど、ボール形成不良や、接
合不良の問題があつた。
The manufacturing process of semiconductor devices such as ICs and LSIs includes, for example, a wire bonding process that connects semiconductor elements and leads with wires. Recently, this work has been carried out with extremely high efficiency using automatic equipment, and a method using gold wire has been put into practical use.
As the cost of semiconductor devices decreases, the material of this wire also becomes a factor in increasing the cost, and there is a demand for bonding using a gold-substituting wire. Attempts have been made to use copper wire and aluminum wire as typical examples, but these have not yet been put to practical use. Especially when using base metal wire such as copper,
The work stage on which parts to be joined such as elements and lead frames are mounted is heated to a temperature of 200℃ to 350℃.
Because it is necessary to raise the temperature to about ℃, this heat oxidizes the wire, making it difficult to spark between the tip of the wire and the discharge electrode, making it difficult to form a good ball, and in the case of wedge bonding. There were problems with poor ball formation and poor bonding, such as difficulty in bonding to the surfaces to be bonded and insufficient bonding strength.
本発明は上述の不都合を除去するためになされ
たもので、卑金属ワイヤを用いてもボール形成性
および接合性の良好な半導体装置のワイヤボンデ
イング方法および装置を提供することを目的とす
る。
The present invention was made in order to eliminate the above-mentioned disadvantages, and an object of the present invention is to provide a wire bonding method and apparatus for a semiconductor device that exhibits good ball forming properties and bonding properties even when base metal wires are used.
本発明はワイヤ繰出し部からキヤピラリまでの
間においてワイヤを還元性ガス雰囲気中で加熱し
て還元し、活性化する還元処理を行なうことを特
徴とする卑金属ワイヤを用いたワイヤボンデイン
グ方法およびこれを実施するための装置である。
The present invention relates to a wire bonding method using a base metal wire, which is characterized by performing a reduction treatment in which the wire is heated and reduced in a reducing gas atmosphere and activated between the wire feeding part and the capillary, and its implementation. It is a device for
以下本発明方法および装置の詳細を第１図〜第
３図を参照しながら実施例により説明する。なお
本実施例は銅ワイヤを用いた電気トーチ法による
ワイヤボンデイングに適用したものであるが、こ
の電気トーチ法による全自動ワイヤボンデイング
装置は当業者において周知であるから、本発明に
直接関係する要部についてのみ説明する。
Hereinafter, details of the method and apparatus of the present invention will be explained by way of examples with reference to FIGS. 1 to 3. This embodiment is applied to wire bonding using an electric torch method using copper wire, but since this fully automatic wire bonding apparatus using an electric torch method is well known to those skilled in the art, the points directly related to the present invention will not be described. We will only explain the parts.
第１図は本発明を実施した第１の実施例として
のワイヤボンデイング装置のワイヤ経路系１を示
す。ボンデイング用ワイヤ、例えば銅ワイヤがワ
イヤ繰出し部、例えばワイヤスプール１ａに巻装
されてボンデイング装置に設置される。このワイ
ヤスプール１ａから導出された銅ワイヤ２は、ワ
イヤガイド３を経てクランパ、例えば第１のクラ
ンパ４、第２のクランパ５を走行し、キヤピラリ
６を挿通して、銅ワイヤ２の先端がキヤピラリ６
から突出した状態で導かれる。この銅ワイヤ２の
突出した先端近傍には電気トーチ棒７が設置さ
れ、銅ワイヤ２の生端にボールを形成する時のみ
銅ワイヤ２の先端との間で放電を発生させるよう
に相対的に移動、例えばトーチ棒７を移動させて
ボール８を形成する。この際、電気トーチ棒７と
ワイヤ２近傍は酸化防止のためにノズル７ａから
流出する不活性ガスや還元性ガスなどで覆われて
いる。このボール８の下方には被接合部材、例え
ば集積回路（1C）９が取着されたリードフレー
ム１０を設置するワークステージ１１が設けられ
ている。このワークステージ１１にはヒータ１２
が組み込まれており、銅ワイヤ２のボンデイング
を良好に促進させるように温度、例えば200℃に
ワークステージ１１は保たれる。上述したワイヤ
経路系１は、ワークステージ１１とは別のX6−
Ｙ駆動テーブル（図示せず）上に設置されるが、
さらにキヤピラリー６をボンデイングアーム６ａ
を介して上下方向（Ｚ軸方向）にも駆動するよう
にそれぞれ直接リニアモータ（図示せず）に接続
される。 FIG. 1 shows a wire path system 1 of a wire bonding apparatus as a first embodiment of the present invention. A bonding wire, such as a copper wire, is wound around a wire feeding portion, such as a wire spool 1a, and is installed in a bonding device. The copper wire 2 led out from the wire spool 1a travels through a wire guide 3, a clamper, for example a first clamper 4, a second clamper 5, and is inserted through a capillary 6 so that the tip of the copper wire 2 is connected to the capillary. 6
guided in a state of prominence. An electric torch rod 7 is installed near the protruding tip of the copper wire 2, and is set relative to the tip of the copper wire 2 so as to generate an electric discharge only when forming a ball at the raw end of the copper wire 2. Movement, for example moving the torch bar 7, forms the ball 8. At this time, the electric torch rod 7 and the vicinity of the wire 2 are covered with inert gas, reducing gas, etc. flowing out from the nozzle 7a to prevent oxidation. A work stage 11 is provided below the ball 8 on which a lead frame 10 to which a member to be bonded, for example, an integrated circuit (1C) 9 is attached, is installed. This work stage 11 has a heater 12.
is incorporated, and the work stage 11 is maintained at a temperature of, for example, 200° C. so as to favorably promote bonding of the copper wire 2. The wire path system 1 described above is a
It is installed on a Y drive table (not shown),
Furthermore, attach the capillary 6 to the bonding arm 6a.
are directly connected to linear motors (not shown) so as to drive in the vertical direction (Z-axis direction) as well.
さらに上記テーブルにはボンデイング位置を視
覚認識するためのカメラ（図示せず）も設置さ
れ、出力をコンピユータ（図示せず）に入力し
て、このコンピユータによりボンデイング位置制
御を行なうようになつている。 Furthermore, a camera (not shown) for visually recognizing the bonding position is also installed on the table, and the output is input to a computer (not shown), which controls the bonding position.
さらにまたワイヤガイド３と第１のクランパ４
との間および第１のクランパ４と第２のクランパ
５との間および第２のクランパ５とキヤピラリア
ーム６ａとの間にはワイヤ２の走行路を囲んでシ
ールドダクト１３，１４，１５が設けられてい
て、これらには図示しない導入管により不活性ガ
スまたは還元性ガスが流入しており、上述したよ
うにヒータ１２による熱のために銅ワイヤ２が酸
化されるのを防止している。本発明の装置は上述
の装置にさらに還元用ダクト２１がワイヤスプー
ル１ａとワイヤガイド３との間に設けられてい
る。 Furthermore, the wire guide 3 and the first clamper 4
Shield ducts 13, 14, 15 are provided surrounding the running path of the wire 2 between the first clamper 4 and the second clamper 5, and between the second clamper 5 and the capillary arm 6a. An inert gas or a reducing gas is introduced into these through an inlet pipe (not shown) to prevent the copper wire 2 from being oxidized due to the heat generated by the heater 12 as described above. The apparatus of the present invention is the above-described apparatus, and further includes a reducing duct 21 between the wire spool 1a and the wire guide 3.
すなわち、還元用ダクト２１は、透明な耐熱ガ
ラスで形成された両端開口した筒状部材であるダ
クト本体２２に一端から順次ガス流入口２３，２
４，２５を設け、ダクト本体２２を支持体２６で
支持して構成されている。そしてガス流入口２
３，２５はそれぞれ両端開口側に傾けて取付けら
れていて、窒素または不活性ガス、例えばアルゴ
ンガスが流入する。また中間の流入口２４からは
図示しない加熱装置により加熱された高温の還元
性ガス、例えば10％の水素を混合したアルゴンガ
スが流入している。 That is, the reduction duct 21 has gas inlets 23 and 2 sequentially connected to the duct body 22, which is a cylindrical member made of transparent heat-resistant glass and open at both ends, from one end.
4 and 25, and the duct main body 22 is supported by a support body 26. and gas inlet 2
3 and 25 are respectively installed with both ends inclined toward the opening side, and nitrogen or an inert gas such as argon gas flows into them. Further, from an intermediate inlet 24, a high-temperature reducing gas heated by a heating device (not shown), for example, argon gas mixed with 10% hydrogen, flows in.
次に上述の装置の使用態様とともに、本発明方
法につき述べる。常法に従い、銅ワイヤ２を繰出
し部であるスプール１ａから繰出し、還元用ダク
ト２１のダクト本体２２を通し、シールドダクト
１３、第１のクランパ４、シールドダクト１４、
第２のクランパ５、シールドダクト１５およびキ
ヤピラリ６を通して銅ワイヤ２を突出させた状態
に準備してボンデイン装置は作動を開始する。こ
れにより一般公知の順序に従つてノズル７ａから
流出する不活性ガスの中で電気トーチ棒７により
放電して銅ワイヤ２の先端にボール８が形成さ
れ、Ｘ−Ｙステージにより移動されて、同時に上
下動してボンデイング作業が続行される。この間
スプール１ａから繰出された銅ワイヤ２は、ダク
ト本体２２に入ると150℃〜400℃の高温に加熱さ
れて流入口２４からダクト本体２２内に流入する
還元性ガスにより加熱されるとともに還元して活
性化され、出口端近傍において流入口２５から流
入する低温の不活性ガスにより十分冷却され還元
用ダクト２１を出ても酸化することなく、次のシ
ールドダクト１３に入る。このようにして還元活
性化されて順次クランパ、シールドダクトを経て
キヤピラリ６に至り、その間酸化されることなく
活性を保つたままボール８が形成され、ボンデイ
ングされる。 Next, the method of the present invention will be described together with the manner in which the above-mentioned apparatus is used. In accordance with the usual method, the copper wire 2 is fed out from the spool 1a which is the feeding part, passed through the duct body 22 of the reduction duct 21, and then passed through the shield duct 13, the first clamper 4, the shield duct 14,
The bonding device starts operating with the copper wire 2 being prepared in a state where it is protruded through the second clamper 5, the shield duct 15, and the capillary 6. As a result, a ball 8 is formed at the tip of the copper wire 2 by discharging it by the electric torch rod 7 in the inert gas flowing out from the nozzle 7a according to a generally known sequence, and is moved by the X-Y stage at the same time. The bonding work continues by moving up and down. During this time, the copper wire 2 fed out from the spool 1a is heated to a high temperature of 150°C to 400°C when it enters the duct body 22, and is heated and reduced by the reducing gas flowing into the duct body 22 from the inlet 24. It is activated and sufficiently cooled by the low-temperature inert gas flowing in from the inlet 25 near the outlet end, and enters the next shield duct 13 without being oxidized even after exiting the reduction duct 21. In this way, it is reduced and activated and reaches the capillary 6 via the clamper and the shield duct, where it remains active without being oxidized to form the ball 8 and is bonded.
なお、本実施例においては、ダクト本体２２を
一体形成したが、適宜、例えば３分割で構成して
もよいことは云うまでもないことである。 In this embodiment, the duct main body 22 is formed integrally, but it goes without saying that it may be divided into three parts as appropriate.
次に第２の実施例につき、第３図を参照して説
明する。この実施例は第１図に示した第１の実施
例とはその還元用ダクト２１の部分だけが相違し
ているので、他の部分については説明を省略す
る。第３図において還元用ダクト３１は一端が閉
じられ他端が開口した耐熱ガラスからなる透明な
筒状部材であるダクト本体３２に、その両端近傍
にガスを流入する流入口３３，３４を設けるとと
もに、端壁３５にワイヤ２を挿通する挿通孔３６
を形成し、さらにダクト本体３２の中央部外側に
ワイヤ２を加熱する加熱装置３７（本実施例にお
いては電気ヒータ）を取付けて構成されている。
そして加熱装置３７でダクト本体３２内を加熱す
ることにより、挿通孔３６を通つて銅ワイヤ２を
加熱する。 Next, a second embodiment will be described with reference to FIG. This embodiment differs from the first embodiment shown in FIG. 1 only in the reduction duct 21, so explanations of the other parts will be omitted. In FIG. 3, the reducing duct 31 has a duct main body 32, which is a transparent cylindrical member made of heat-resistant glass, with one end closed and the other end open, and inlet ports 33 and 34 for gas to flow in near both ends thereof. , an insertion hole 36 through which the wire 2 is inserted into the end wall 35.
A heating device 37 (an electric heater in this embodiment) for heating the wire 2 is attached to the outside of the central portion of the duct body 32.
Then, by heating the inside of the duct body 32 with the heating device 37, the copper wire 2 is heated through the insertion hole 36.
一方流入口３３から還元性ガスとしてアルゴン
＋10％水素のガスを流入させ、流入口３４から冷
却用ガスとしてアルゴンガスを流入させる。これ
らにより還元性ガス中で加熱されて還元され、活
性化された銅ワイヤ２は冷却され、酸化が防止さ
れた状態でキヤピラリ６の方に送られて行く。 On the other hand, argon + 10% hydrogen gas is allowed to flow in from the inlet 33 as a reducing gas, and argon gas is allowed to flow in from the inlet 34 as a cooling gas. The activated copper wire 2 is heated and reduced in the reducing gas and is cooled and sent to the capillary 6 in a state where oxidation is prevented.
なお、各実施例においては、加熱装置３７とし
て電気ヒータを用いたが、ガスその他発熱装置な
らば何でもよい。また還元用ダクト２１はワイヤ
繰出し部１ａからキヤピラ６までの間のワイヤ経
路系１のいずれの部位に設けてもよい。さらにま
た、使用する卑金属ワイヤとして銅ワイヤを用い
たが、銅合金ワイヤ、アルミニウムワイヤ、アル
ミニウム合金ワイヤなどいずれを用いてもよい。 In each embodiment, an electric heater is used as the heating device 37, but any other heat generating device such as gas may be used. Further, the reducing duct 21 may be provided at any part of the wire path system 1 between the wire feeding portion 1a and the capillary 6. Furthermore, although copper wire was used as the base metal wire, any copper alloy wire, aluminum wire, aluminum alloy wire, etc. may be used.
以上詳述したように、本発明のワイボンデイン
グ方法は、ワイヤ繰出し部からキヤピラリまでの
間にワイヤを加熱しながら還元性ガスの中を通す
還元処理を施すので卑金属ワイヤを用いても十分
還元され、活性化されるため、良好なボールを得
ることができ、また接合性も向上するので、高品
質な安定したボンデイングを行なうことができ
る。
As detailed above, the wire bonding method of the present invention performs a reduction treatment in which a reducing gas is passed through the wire while heating it between the wire feeding section and the capillary, so that even if a base metal wire is used, sufficient reduction is not achieved. , since it is activated, it is possible to obtain a good ball, and the bonding properties are also improved, so that high quality and stable bonding can be performed.
さらにまた、本発明のワイヤボンデイング装置
はワイヤ経路系中に、還元用ダクトを設け、ダク
ト本体に還元性ガスの流入口および出口側に冷却
用ガスの流入口を設けさらに加熱装置を設けて構
成したので、十分加熱されてワイヤは還元される
とともに、出口において冷却されるから、活性化
が保持されたままボンデイングすることができる
ので本発明方法の効果を一層発揮する効果を奏す
るものである。 Furthermore, the wire bonding apparatus of the present invention includes a reducing duct provided in the wire path system, a reducing gas inlet in the duct body and a cooling gas inlet on the outlet side, and a heating device. As a result, the wire is sufficiently heated to be reduced and at the same time cooled at the exit, bonding can be performed while the activation is maintained, which further enhances the effects of the method of the present invention.
第１図は本発明装置の実施例の要部を示す構成
図、第２図は同じく第１の実施例の要部（還元用
ダクト）を示す断面図、第３図は同じく第２の実
施例の要部（還元用ダクト）を示す断面図であ
る。
１……ワイヤ経路系、１ａ……ワイヤ繰出し
部、スプール、２……卑金属ワイヤ、４，５……
クランパ、６……キヤピラリ、９，１０……被接
合部材（集積回路リードフレーム）、２２，２３
……筒状部材、ダクト本体、２４，３３……流入
口（還元用）、２５，３４……流入口（冷却用）、
３７……加熱装置。
Fig. 1 is a configuration diagram showing the main parts of an embodiment of the device of the present invention, Fig. 2 is a sectional view showing the main parts (reduction duct) of the first embodiment, and Fig. 3 is a diagram showing the main parts of the first embodiment. It is a sectional view showing the main part (reduction duct) of an example. DESCRIPTION OF SYMBOLS 1... Wire path system, 1a... Wire feeding part, spool, 2... Base metal wire, 4, 5...
Clamper, 6... Capillary, 9, 10... Member to be joined (integrated circuit lead frame), 22, 23
... Cylindrical member, duct body, 24, 33 ... Inflow port (for reduction), 25, 34 ... Inflow port (for cooling),
37... Heating device.
Claims (1)
ランパを介しキヤピラリに挿通して被接合部材に
圧着してボンデイングする半導体装置のワイヤボ
ンデイング方法において、上記ワイヤ繰出し部か
ら上記キヤピラリまでの間において上記ワイヤを
加熱して還元処理を行なうことを特徴とするワイ
ヤボンデイング方法。 ２ 還元性ガスで卑金属ワイヤを加熱することを
特徴とする特許請求の範囲第１項記載のワイヤボ
ンデイング方法。 ３ 還元処理はワイヤを還元後還元性ガスまたは
不活性ガスによる冷却を含むことを特徴とする特
許請求の範囲第１項または第２項記載のワイヤボ
ンデイング方法。 ４ 加熱用の還元性ガスは150℃〜400℃の温度で
あることを特徴とする特許請求の範囲第１項ない
し第３項のいずれかに記載のワイヤボンデイング
方法。 ５ 卑金属ワイヤをワイヤ繰出し部から導出しク
ランパを介してキヤピラリに挿通するワイヤ経路
系を有する半導体装置のワイヤボンデイング装置
において、上記ワイヤ経路系は上記ワイヤを挿通
する筒状部材と、この筒状部材に還元性ガスを流
入するガス流入口および還元後のワイヤを冷却す
る還元性ガスまたは不活性ガスを流入するガス流
入口と、上記筒状部材内のワイヤを加熱する加熱
装置とを具備したことを特徴とするワイヤボンデ
イング装置。 ６ 加熱装置は筒状部材に流入する還元性ガスを
加熱してワイヤを加熱するものであることを特徴
とする特許請求の範囲第５項記載のワイヤボンデ
イング装置。 ７ 加熱装置は筒状部材を外側から加熱してワイ
ヤを加熱するものであることを特徴とする特許請
求の範囲第５項記載のワイヤボンデイング装置。[Scope of Claims] 1. A wire bonding method for a semiconductor device in which a base metal wire is led out from a wire feeding part, inserted into a capillary via a clamper, and crimped and bonded to a member to be bonded, wherein a wire from the wire feeding part to the capillary is bonded. A wire bonding method characterized in that the wire is heated and reduced during a reduction process. 2. The wire bonding method according to claim 1, characterized in that the base metal wire is heated with a reducing gas. 3. The wire bonding method according to claim 1 or 2, wherein the reduction treatment includes cooling the wire with a reducing gas or an inert gas after reducing the wire. 4. The wire bonding method according to any one of claims 1 to 3, wherein the heating reducing gas has a temperature of 150°C to 400°C. 5. In a wire bonding apparatus for a semiconductor device having a wire path system for leading out a base metal wire from a wire feeding portion and inserting it into a capillary via a clamper, the wire path system includes a cylindrical member through which the wire is inserted, and this cylindrical member. a gas inlet for flowing a reducing gas into the wire, a gas inlet for flowing a reducing gas or an inert gas to cool the wire after reduction, and a heating device for heating the wire in the cylindrical member. A wire bonding device featuring: 6. The wire bonding apparatus according to claim 5, wherein the heating device heats the reducing gas flowing into the cylindrical member to heat the wire. 7. The wire bonding apparatus according to claim 5, wherein the heating device heats the wire by heating the cylindrical member from the outside.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60000187A JPS61159743A (en) | 1985-01-07 | 1985-01-07 | Method and apparatus for wire-bonding of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60000187A JPS61159743A (en) | 1985-01-07 | 1985-01-07 | Method and apparatus for wire-bonding of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61159743A JPS61159743A (en) | 1986-07-19 |
| JPH0325020B2 true JPH0325020B2 (en) | 1991-04-04 |
Family
ID=11466988
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60000187A Granted JPS61159743A (en) | 1985-01-07 | 1985-01-07 | Method and apparatus for wire-bonding of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61159743A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5152450A (en) * | 1987-01-26 | 1992-10-06 | Hitachi, Ltd. | Wire-bonding method, wire-bonding apparatus,and semiconductor device produced by the wire-bonding method |
| DE58908123D1 (en) * | 1988-02-23 | 1994-09-08 | F&K Delvotec Bondtechnik Gmbh | Device and method for the controlled feeding of a bonding wire to the wedge or to the capillary of a bonding head. |
| DE3915472C2 (en) * | 1988-06-02 | 1995-11-30 | Samsung Electronics Co Ltd | Bonding device |
-
1985
- 1985-01-07 JP JP60000187A patent/JPS61159743A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61159743A (en) | 1986-07-19 |
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