JPH03249702A - Converging lens and optical coupling system for semiconductor laser - Google Patents
Converging lens and optical coupling system for semiconductor laserInfo
- Publication number
- JPH03249702A JPH03249702A JP4832990A JP4832990A JPH03249702A JP H03249702 A JPH03249702 A JP H03249702A JP 4832990 A JP4832990 A JP 4832990A JP 4832990 A JP4832990 A JP 4832990A JP H03249702 A JPH03249702 A JP H03249702A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- prism
- metal film
- focusing lens
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 230000003287 optical effect Effects 0.000 title claims abstract description 11
- 230000008878 coupling Effects 0.000 title claims abstract description 9
- 238000010168 coupling process Methods 0.000 title claims abstract description 9
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 9
- 239000011521 glass Substances 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 10
- 239000013307 optical fiber Substances 0.000 abstract description 15
- 230000010355 oscillation Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000000368 destabilizing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4207—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback
Landscapes
- Optical Couplings Of Light Guides (AREA)
Abstract
Description
【発明の詳細な説明】
「産業上の利用分野」
本発明は、半導体レーザと光ファイバが光学的に結合さ
れる半導体レーザ用集束レンズと半導体レーザ用光結合
系に関するものである。DETAILED DESCRIPTION OF THE INVENTION "Field of Industrial Application" The present invention relates to a focusing lens for a semiconductor laser and an optical coupling system for a semiconductor laser, in which a semiconductor laser and an optical fiber are optically coupled.
「従来の技術および発明が解決しようとする問題点」第
４図および第２図により説明する。``Prior art and problems to be solved by the invention'' will be explained with reference to FIGS. 4 and 2.
半導体レーザ（以下、ｒＬＤＪと称する）素子１に内蔵
されていて、ヒートシンク４上にろう付けされている発
光チップ２の端面３より出射するレーザビーム６は、ｐ
ｎ接合層に平行なＸＸ方向に約２０＠〜２５″、ｐｎ接
合層に垂直なＹＹ方向に約３０°〜３５″に広がるとこ
ろの楕円状の非円形断面となり、レーザビーム６集束用
の屈折率分布形集束レンズ５を通過して、レーザビーム
６は楕円断面の楕円がある程度改善される（第４図の図
示（ａ）より申）の方が円形断面に近くなる）。A laser beam 6 emitted from an end face 3 of a light emitting chip 2 built in a semiconductor laser (hereinafter referred to as rLDJ) element 1 and soldered onto a heat sink 4 is p
It has an elliptical non-circular cross section extending approximately 20° to 25'' in the XX direction parallel to the n-junction layer and approximately 30° to 35'' in the YY direction perpendicular to the pn junction layer, and is refracted for focusing the laser beam 6. After passing through the index distribution type focusing lens 5, the elliptic cross section of the laser beam 6 is improved to some extent (the cross section shown in FIG. 4(a) is closer to a circular cross section).
しかし、その断面が楕円である傾向は残存し、光ファイ
バ７の中心にあって光パワー導波の機能を有するコア８
の左端面で最小面積に集束可能であるが、楕円の長軸と
短軸との比が１．１〜１．３位となっている。レーザビ
ーム６の断面とコア８の断面は一致していることが望ま
しいが、一般に光ファイバ７のコア８断面は円形である
し、楕円であっても前記レーザビーム６の断面と一致す
るものでないので、結合効率が悪い。However, the tendency for the cross section to be elliptical remains, and the core 8 which is located at the center of the optical fiber 7 and has the function of optical power waveguide.
It is possible to focus the light to the minimum area on the left end surface of the ellipse, but the ratio of the major axis to the minor axis of the ellipse is about 1.1 to 1.3. It is desirable that the cross section of the laser beam 6 and the cross section of the core 8 match, but generally the cross section of the core 8 of the optical fiber 7 is circular, and even if it is elliptical, it does not match the cross section of the laser beam 6. Therefore, the coupling efficiency is poor.
したがって、レーザビーム６を光ファイバ７のコア８に
効率良く結合させるためには、レーザビーム６の光軸上
の集束位置９におけるビーム断面を円形もしくは任意の
楕円形状にする必要がある。Therefore, in order to efficiently couple the laser beam 6 to the core 8 of the optical fiber 7, the beam cross section at the focal position 9 on the optical axis of the laser beam 6 needs to be circular or an arbitrary ellipse.
特にコア８の直径が８〜１０μｍと細いシングルモード
ファイバにおいては、ビーム集束位置９とコア８中心を
一致させる調整およびこの調整された相互関係位置に永
久固定されることが必要となるため、レーザビーム６断
面とコア８断面の形状が一致することが望ましい。In particular, in single mode fibers with a thin core 8 of 8 to 10 μm in diameter, it is necessary to adjust the beam focusing position 9 to match the center of the core 8 and to permanently fix the core 8 at this adjusted relative position. It is desirable that the cross-sections of the beam 6 and the core 8 have the same shape.
また、レーザビーム６ａの数％は光ファイバ７のコア８
の左端面で反射され、この反射光の一部分が集束レンズ
５を通過してＬＤ素子１に内蔵されている発光チップ２
に逆入射してＬＤの発振を不安定にさせるという問題点
もあった。In addition, several percent of the laser beam 6a is transmitted to the core 8 of the optical fiber 7.
A part of this reflected light passes through the focusing lens 5 and is reflected by the light emitting chip 2 built into the LD element 1.
There is also the problem that the oscillation of the LD becomes unstable due to reverse incidence on the LD.
「問題点を解決するための手段および作用」本発明は、
上記の事情に鑑み、レーザビーム６の楕円断面を円形断
面もしくは任意の楕円断面にビーム整形するため、およ
び光ファイバ７からの反射戻り光を集束レンズ５に逆入
射する光量を減少させるために、戻り光入射端面にＣｒ
金属膜を蒸着した円筒均質ガラスプリズム１１を集束レ
ンズ１０の右側端面に接合したところの新たな半導体レ
ーザ用集束レンズ１２を作り、レーザビーム６の長径を
補正するように、半導体レーザ用集束レンズ１２と半導
体レーザ１とを、半導体レーザ用集束レンズのプリズム
斜面の法線と、半導体素子のｐｎ接合面と垂直な方向の
直線ＹＹが同一平面上にあるように配置することにより
、光フアイバ左端９ａにおけるレーザビーム６ｂの断面
は凹形もしくは任意の楕円となり、しかも光ファイバ７
からの反射戻り光を、円筒均質ガラスプリズム１１斜面
により反射さセレーザ素子１に逆入射するレーザ光を減
少させることができる。"Means and actions for solving the problems" The present invention includes:
In view of the above circumstances, in order to shape the elliptical cross section of the laser beam 6 into a circular cross section or an arbitrary elliptical cross section, and to reduce the amount of reflected return light from the optical fiber 7 that enters the focusing lens 5, Cr on the return light incident end face
A new focusing lens 12 for a semiconductor laser is made by bonding a cylindrical homogeneous glass prism 11 on which a metal film is vapor-deposited to the right end surface of the focusing lens 10. and the semiconductor laser 1 are arranged so that the normal line of the prism slope of the semiconductor laser focusing lens and the straight line YY perpendicular to the pn junction surface of the semiconductor element are on the same plane, so that the left end 9a of the optical fiber The cross section of the laser beam 6b at is concave or an arbitrary ellipse, and the optical fiber 7
The reflected return light from the cylindrical homogeneous glass prism 11 is reflected by the slope of the cylindrical homogeneous glass prism 11, thereby reducing the amount of laser light that enters the laser diode 1 back.
「実施例」
以下、第１図〜第３図により本発明の一実施例を説明す
る。なお、全図を通じて同一符号は同一対象物を示す。"Example" Hereinafter, an example of the present invention will be described with reference to FIGS. 1 to 3. Note that the same reference numerals indicate the same objects throughout the figures.
第１図は本発明の一実施例の斜視構成図、第２図はＬＤ
素子に内蔵されている発光チップ２および発光部分３の
方向を示す斜視図、第３図はビーム集束、ビーム断面形
整形、反射戻り光減少レンズ（以下、「集束レンズ１２
Ｊと称する）の縦断面図である。Fig. 1 is a perspective configuration diagram of an embodiment of the present invention, Fig. 2 is an LD
FIG. 3 is a perspective view showing the direction of the light emitting chip 2 and the light emitting part 3 built into the device.
FIG.
まず円筒均質ガラスプリズム１１の斜面１１ａに、平面
１１ｂ側からの入射ビームに対しては反射１％、斜面１
１ａ側からの入射ビームに対しては反射５％のＣｒ金属
膜を真空蒸着し、集束レンズ１ｏの外径と同じ径に心取
りし、ＵＶ接着剤により円筒集束レンズｌＯに接合固定
する。First, the slope 11a of the cylindrical homogeneous glass prism 11 reflects 1% of the incident beam from the plane 11b side.
For the incident beam from the side 1a, a Cr metal film with a reflection rate of 5% is vacuum-deposited, centered at the same diameter as the outer diameter of the focusing lens 1o, and bonded and fixed to the cylindrical focusing lens 10 with UV adhesive.
この円筒均質ガラスプリズム１１と円筒集束レンズｌＯ
とより構成される前記集束レンズ１２を、第１図に示す
ように、ＬＤ素子１のｐｎ接合面と垂直な方向の直線Ｙ
Ｙと集束レンズ１２のプリズム１１の斜面の法線１３が
同一平面上にあるように配置し、さらにレーザビーム６
ｂの集束点９ａを端面とするように光ファイバ７を屈折
光軸１４上に配置する。This cylindrical homogeneous glass prism 11 and the cylindrical focusing lens lO
As shown in FIG. 1, the focusing lens 12 composed of
Y and the normal line 13 of the slope of the prism 11 of the focusing lens 12 are arranged on the same plane, and the laser beam 6
The optical fiber 7 is arranged on the refraction optical axis 14 so that the convergence point 9a of b is the end face.
このとき、レーザビーム６ｂとコア８の断面中心が一致
しかつ輪郭も重なり合うよう調整する。At this time, adjustments are made so that the cross-sectional centers of the laser beam 6b and the core 8 coincide with each other, and their contours also overlap.
なお、円筒均質ガラスプリズム１１の斜面１１ａの傾斜
角は、使用するＬＤ素子１あるいは光ファイバ７のコア
８断面形状などの諸条件によって決定される。Note that the inclination angle of the slope 11a of the cylindrical homogeneous glass prism 11 is determined by various conditions such as the LD element 1 used or the cross-sectional shape of the core 8 of the optical fiber 7.
「発明の効果」
本発明は、屈折率分布形円筒レンズに、プリズム面にＣ
ｒ金属膜を真空蒸着した均質ガラスプリズムを結合一体
化してなる半導体レーザ用集束レンズで、また屈折率分
布形円筒レンズに、プリズム面にＣｒ金属膜を真空蒸着
した均質ガラスプリズムを結合一体化してなる半導体レ
ーザ用集束レンズのプリズム斜面の法線と、半導体素子
のｐｎ接合面と垂直な方向の直線ＹＹが同一平面上にあ
るように、半導体レーザ用集束レンズと半導体レーザと
を配置してなる半導体レーザ用光結合系であるところか
ら、レーザビームの光軸上の集束位置におけるビーム断
面を円形もしくは任意の楕円にすることができ、光ファ
イバのコア端面からの反射光をＣｒ金属膜で反射させる
ことで可及的に減少させ発光チップに逆入射してＬＤを
不安定にさせることはない。"Effects of the Invention" The present invention provides a gradient index cylindrical lens with C on the prism surface.
A focusing lens for a semiconductor laser, which is made by combining and integrating a homogeneous glass prism with a vacuum-deposited Cr metal film on the prism surface, and a homogeneous glass prism with a Cr metal film vacuum-deposited on the prism surface into a gradient index cylindrical lens. The focusing lens for a semiconductor laser and the semiconductor laser are arranged so that the normal line of the prism slope of the focusing lens for a semiconductor laser and the straight line YY perpendicular to the pn junction surface of the semiconductor element are on the same plane. Since this is an optical coupling system for semiconductor lasers, the beam cross section at the focusing position on the optical axis of the laser beam can be made circular or arbitrary ellipse, and the reflected light from the core end face of the optical fiber is reflected by the Cr metal film. This reduces the amount of light as much as possible and prevents it from entering the light emitting chip and destabilizing the LD.
第１図は本実施例の全体配置斜視図、第２図はＬＤ素子
１の内部構造を示す斜視図、第３図は本実施例における
集束レンズ１２の縦断面図、第４図は従来の半導体レー
ザと光ファイバの光結合の模式図である。
１・・・ＬＤ素子
２・・・レーザ発光チップ
３・・・レーザ発光チップの発光端面
４・・・ヒートシンク
５・・・屈折率分布形集束レンズ
６・・・射出レーザビーム
６Ｃ・・・反射レーザビーム
７・・・光ファイバ
８・・・コ ア
９・・・光フアイバ左端面
１０・・・屈折率分布形集束レンズ
１１・・・円筒均質ガラスプリズム
１２・・・集束レンズ
１３・・・集束レンズのプリズム斜面の法線１４・・・
屈
折
光
軸FIG. 1 is a perspective view of the overall arrangement of this embodiment, FIG. 2 is a perspective view showing the internal structure of the LD element 1, FIG. 3 is a vertical cross-sectional view of the focusing lens 12 in this embodiment, and FIG. 4 is a conventional one. FIG. 2 is a schematic diagram of optical coupling between a semiconductor laser and an optical fiber. 1... LD element 2... Laser emitting chip 3... Light emitting end face of laser emitting chip 4... Heat sink 5... Gradient index focusing lens 6... Emitted laser beam 6C... Reflection Laser beam 7... Optical fiber 8... Core 9... Optical fiber left end surface 10... Gradient index focusing lens 11... Cylindrical homogeneous glass prism 12... Focusing lens 13... Normal line 14 of the prism slope of the focusing lens...
refraction optical axis
Claims (2)
属膜を真空蒸着した均質ガラスプリズムを結合一体化し
てなる半導体レーザ用集束レンズ。(1) A focusing lens for a semiconductor laser, which is formed by integrating a gradient index cylindrical lens with a homogeneous glass prism with a Cr metal film vacuum-deposited on the prism surface.
属膜を真空蒸着した均質ガラスプリズムを結合一体化し
てなる半導体レーザ用集束レンズのプリズム斜面の法線
と、半導体素子のｐｎ接合面と垂直な方向の直線ＹＹが
同一平面上にあるように、半導体レーザ用集束レンズと
半導体レーザとを配置してなる半導体レーザ用光結合系
。(2) The normal to the prism slope of a focusing lens for a semiconductor laser formed by integrating a gradient index cylindrical lens with a homogeneous glass prism with a Cr metal film vacuum-deposited on the prism surface, and the pn junction surface of the semiconductor element. An optical coupling system for a semiconductor laser in which a focusing lens for a semiconductor laser and a semiconductor laser are arranged so that vertical straight lines YY are on the same plane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2048329A JP2971087B2 (en) | 1990-02-28 | 1990-02-28 | Optical coupling system for semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2048329A JP2971087B2 (en) | 1990-02-28 | 1990-02-28 | Optical coupling system for semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03249702A true JPH03249702A (en) | 1991-11-07 |
| JP2971087B2 JP2971087B2 (en) | 1999-11-02 |
Family
ID=12800382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2048329A Expired - Fee Related JP2971087B2 (en) | 1990-02-28 | 1990-02-28 | Optical coupling system for semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2971087B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003107302A (en) * | 2001-09-28 | 2003-04-09 | Sony Corp | Optical transmitter/receiver |
-
1990
- 1990-02-28 JP JP2048329A patent/JP2971087B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003107302A (en) * | 2001-09-28 | 2003-04-09 | Sony Corp | Optical transmitter/receiver |
| WO2003029868A1 (en) * | 2001-09-28 | 2003-04-10 | Sony Corporation | Optical transmitter/receiver |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2971087B2 (en) | 1999-11-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |