JPH03248415A - Manufacturing device of semiconductor device - Google Patents
Manufacturing device of semiconductor deviceInfo
- Publication number
- JPH03248415A JPH03248415A JP4616090A JP4616090A JPH03248415A JP H03248415 A JPH03248415 A JP H03248415A JP 4616090 A JP4616090 A JP 4616090A JP 4616090 A JP4616090 A JP 4616090A JP H03248415 A JPH03248415 A JP H03248415A
- Authority
- JP
- Japan
- Prior art keywords
- inert gas
- gas supply
- discharge part
- reaction
- entire surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000011261 inert gas Substances 0.000 claims abstract description 17
- 239000012495 reaction gas Substances 0.000 claims abstract description 13
- 239000010409 thin film Substances 0.000 claims abstract description 6
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims description 3
- 239000007795 chemical reaction product Substances 0.000 abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000428 dust Substances 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 4
- 239000000376 reactant Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002362 mulch Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造装置に関し、特にウェハーに
薄膜を常圧気相成長で成長させる化学気相成長装置（以
下ＣＶＤ装置と記す）に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an apparatus for manufacturing semiconductor devices, and particularly to a chemical vapor deposition apparatus (hereinafter referred to as a CVD apparatus) for growing a thin film on a wafer by normal pressure vapor deposition.
従来、この種の常圧ＣＶＤ装置の反応ガス排気部を第２
図の斜視図に示す。第２図において、インジェクターヘ
ッド１にモノシラン、酸素等の反応ガスがパイプを通っ
て送り込まれ、インジェクターヘッド１の下部により反
応ガスがマツフル２の中に供給される。一方、ウェハー
はマツフル２中を通ってインジェクターヘッド１の下に
移送され、薄膜が形成される。その後、排気部３に反応
ガスは排気される構造となっている。この際インジェク
ターヘッド１の周辺に反応生成物を付着させないように
、不活性ガス供給部４から不活性ガスを供給している。Conventionally, the reaction gas exhaust section of this type of atmospheric pressure CVD apparatus was
Shown in perspective view in the figure. In FIG. 2, a reactive gas such as monosilane, oxygen, etc. is fed into the injector head 1 through a pipe, and the reactive gas is supplied into the matsuful 2 from the lower part of the injector head 1. On the other hand, the wafer is transferred through the mulch 2 and under the injector head 1, and a thin film is formed thereon. Thereafter, the reaction gas is exhausted to the exhaust section 3. At this time, inert gas is supplied from an inert gas supply section 4 so as to prevent reaction products from adhering to the periphery of the injector head 1.
上述した従来のＣＶＤ装置の反応ガス排気部は、不活性
ガス供給部をインジェクターヘッド周辺にしか有してい
ないので、排気部の他の箇所に反応生成物が付着し、ご
み発生の原因となるという欠点がある。Since the reaction gas exhaust section of the conventional CVD apparatus described above has an inert gas supply section only around the injector head, reaction products may adhere to other parts of the exhaust section, causing dust generation. There is a drawback.
上述した従来のＣＶＤ装置の反応ガス排気部には、イン
ジェクターヘッド周辺部を除き不活性ガス供給部が設け
られていないのに対し、本発明のＣＶＤ装置の反応ガス
排気部は、不活性ガス供給部を持っているという相違点
を有する。The reaction gas exhaust section of the conventional CVD apparatus described above is not provided with an inert gas supply section except for the area around the injector head, whereas the reaction gas exhaust section of the CVD apparatus of the present invention is provided with an inert gas supply section. The difference is that they have a division.
本発明の半導体装置の製造装置は、ウェハーに薄膜を形
成する常圧ＣＶＤ装置における反応ガス排気部の全面に
渡り不活性ガス供給部を設けたものである。The semiconductor device manufacturing apparatus of the present invention is an atmospheric pressure CVD apparatus for forming a thin film on a wafer, in which an inert gas supply section is provided over the entire surface of a reaction gas exhaust section.
次に、本発明について図面を参照して説明する。第１図
は本発明の一実施例における反応ガス排気部を示す斜視
図である６第１図において、従来と同様インジェクター
ヘッド１より反応ガスがマツフル２の中に供給される。Next, the present invention will be explained with reference to the drawings. FIG. 1 is a perspective view showing a reactant gas exhaust section in one embodiment of the present invention.6 In FIG. 1, reactant gas is supplied into a matsuful 2 from an injector head 1 as in the conventional case.
その後、排気部３に反応ガスは排気される構造となって
いる。Thereafter, the reaction gas is exhausted to the exhaust section 3.
この際反応ガスの排気部３に反応生成物を付着させない
ように、不活性ガス供給部４が排気部３の全面に渡り不
活性ガスを供給している。排気部３の壁はステンレス、
アルミニウム等の金属の網で形成され、この網の目を不
活性ガス供給部４としている。At this time, an inert gas supply section 4 supplies inert gas over the entire surface of the exhaust section 3 so that reaction products do not adhere to the reaction gas exhaust section 3 . The wall of exhaust section 3 is made of stainless steel.
It is formed of a mesh made of metal such as aluminum, and the mesh is used as the inert gas supply section 4 .
以上説明したように本発明は、ＣＶＤ装置の反応ガス排
気部に不活性ガス供給部を設けることにより、排気部の
反応生成物の付着を低減できる効果がある。As explained above, the present invention has the effect of reducing adhesion of reaction products to the exhaust section by providing an inert gas supply section in the reaction gas exhaust section of a CVD apparatus.
第１図は本発明の一実施例における反応ガス排気部の斜
視図、第２図は従来のＣＶＤ装置の反応ガス排気部の斜
視図である。
１・・・インジェクターヘッド、２・・・マツフル、３
・・・排気部、４・・・不活性ガス供給部。FIG. 1 is a perspective view of a reaction gas exhaust section in an embodiment of the present invention, and FIG. 2 is a perspective view of a reaction gas exhaust section of a conventional CVD apparatus. 1...Injector head, 2...Matsuful, 3
...Exhaust section, 4...Inert gas supply section.
Claims (1)
装置の製造装置において、反応ガス排気部の全面に渡り
不活性ガス供給部を有ることを特徴とする半導体装置の
製造装置。A semiconductor device manufacturing apparatus for forming a thin film on a wafer using an atmospheric pressure CVD apparatus, characterized in that the semiconductor device manufacturing apparatus has an inert gas supply section over the entire surface of a reaction gas exhaust section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4616090A JPH03248415A (en) | 1990-02-26 | 1990-02-26 | Manufacturing device of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4616090A JPH03248415A (en) | 1990-02-26 | 1990-02-26 | Manufacturing device of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03248415A true JPH03248415A (en) | 1991-11-06 |
Family
ID=12739257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4616090A Pending JPH03248415A (en) | 1990-02-26 | 1990-02-26 | Manufacturing device of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03248415A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7819081B2 (en) | 2002-10-07 | 2010-10-26 | Sekisui Chemical Co., Ltd. | Plasma film forming system |
-
1990
- 1990-02-26 JP JP4616090A patent/JPH03248415A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7819081B2 (en) | 2002-10-07 | 2010-10-26 | Sekisui Chemical Co., Ltd. | Plasma film forming system |
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