JPH03245586A - Optical transmission circuit - Google Patents
Optical transmission circuitInfo
- Publication number
- JPH03245586A JPH03245586A JP2043202A JP4320290A JPH03245586A JP H03245586 A JPH03245586 A JP H03245586A JP 2043202 A JP2043202 A JP 2043202A JP 4320290 A JP4320290 A JP 4320290A JP H03245586 A JPH03245586 A JP H03245586A
- Authority
- JP
- Japan
- Prior art keywords
- package
- laser device
- semiconductor laser
- heat
- fixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 26
- 230000005540 biological transmission Effects 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 238000001816 cooling Methods 0.000 claims abstract description 10
- 239000000919 ceramic Substances 0.000 claims abstract description 4
- 230000005855 radiation Effects 0.000 claims description 4
- 230000017525 heat dissipation Effects 0.000 claims description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000011810 insulating material Substances 0.000 abstract description 17
- 239000004809 Teflon Substances 0.000 abstract description 5
- 229920006362 Teflon® Polymers 0.000 abstract description 5
- 239000011347 resin Substances 0.000 abstract description 4
- 229920005989 resin Polymers 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 2
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
Landscapes
- Optical Communication System (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は光送信回路に関し、特に伝送速度がＩ Ｇ ｂ
／ ｓを越える超高速光通信システム用の光送信回路
に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an optical transmission circuit, and in particular, the present invention relates to an optical transmission circuit with a transmission speed of I G b
The present invention relates to an optical transmission circuit for an ultrahigh-speed optical communication system exceeding 1/s.
伝送速度がＩ Ｇ ｂ ／ ｓを越える超高速光通信シ
ステムに適用する光送信回路では、超高速動作を安定に
実現するため、光通信回路内に内蔵する半導体レーザ装
置と半導体レーザ装置の駆動回路との接続部に寄生する
インダクタンス、及び寄生容量を極力少なくする必要が
ある。このため、半導体レーザ装置と半導体レーザ装置
の駆動回路（以下駆動ＩＣと呼ぶ）との間をできるだけ
短い距離で接続する必要がある。In optical transmission circuits applied to ultra-high-speed optical communication systems with transmission speeds exceeding IG b/s, in order to achieve stable ultra-high-speed operation, the semiconductor laser device built into the optical communication circuit and the drive circuit for the semiconductor laser device are required. It is necessary to minimize the parasitic inductance and parasitic capacitance at the connection between the two. For this reason, it is necessary to connect the semiconductor laser device and the drive circuit for the semiconductor laser device (hereinafter referred to as a drive IC) over a distance as short as possible.
このため従来の光送信回路では、第３図に示すように、
駆動ＩＣ２のチップと、発光素子、光結合回路、及び発
光素子を冷却する電子冷却素子よりなる半導体レーザ装
置３とを、同一のパッケージ２２に収容してプリント基
板４上で短く配線できるようにしである。For this reason, in the conventional optical transmission circuit, as shown in Fig. 3,
The chip of the driving IC 2 and the semiconductor laser device 3 comprising a light emitting element, an optical coupling circuit, and an electronic cooling element for cooling the light emitting element are housed in the same package 22 so that short wiring can be made on the printed circuit board 4. be.
上述した従来の光送信回路では、同一のパッケージ内に
駆動ＩＣ２と半導体レーザ装置３とを搭載する実装形態
となっているので、半導体レーザ装Ｗ３及び駆動ＩＣ２
で発生した熱は、パッケージ２２の外底面に取り付けた
放熱器２０に逃がす構成となっている。In the conventional optical transmission circuit described above, the driving IC 2 and the semiconductor laser device 3 are mounted in the same package, so the semiconductor laser device W3 and the driving IC 2 are mounted in the same package.
The heat generated is released to a heat radiator 20 attached to the outer bottom surface of the package 22.
一般に、集積回路の動作温度範囲は、集積回路のジャン
クション温度（Ｔｊ）によって制限されるが、通常のプ
ロセスでは、Ｔｊが１００℃以上保証されるため、パッ
ケージの周囲温度Ｏ℃から７５°Ｃ程度の動作温度範囲
では、駆動ＩＣ２単体の放熱用に、比較的抵抗の大きな
放熱器を使用しても動作上問題ない。一方、半導体レー
ザ装置３では、発振特性の安定化のために内部に搭載す
る発光素子の温度を室温（２５℃）付近に制御する必要
があるなめ、駆動ＩＣ２に比べて放熱器の熱抵抗を下げ
る必要がある。Generally, the operating temperature range of an integrated circuit is limited by the junction temperature (Tj) of the integrated circuit, but in normal processes, Tj is guaranteed to be 100°C or higher, so the ambient temperature of the package is from 0°C to about 75°C. In the operating temperature range, there is no problem in operation even if a heat radiator with a relatively large resistance is used for heat radiation of the drive IC 2 alone. On the other hand, in the semiconductor laser device 3, it is necessary to control the temperature of the light emitting element mounted inside to around room temperature (25°C) in order to stabilize the oscillation characteristics, so the thermal resistance of the heatsink is lower than that of the drive IC 2. need to be lowered.
特に、駆動回路ＩＣ２の集積度が高く、消費電力が大き
い場合には、駆動ＩＣ２から発生した熱がパッケージ２
２及び放熱器２０を介して半導体レーザ装Ｍ３に回り込
むため、所要の冷却特性を得るためにサイズの大きな放
熱器をつけて、発熱源から外部までの熱抵抗を下げる必
要がある。In particular, when the drive circuit IC2 has a high degree of integration and consumes a large amount of power, the heat generated from the drive IC2 is transferred to the package 2.
Since the heat flows around to the semiconductor laser device M3 via the heat sink 2 and the heat sink 20, it is necessary to install a large heat sink to obtain the required cooling characteristics and to lower the thermal resistance from the heat source to the outside.
このように従来の光送信回路は、駆動ＩＣからの熱の回
り込みのために動作温度範囲が０°〜６０℃程度に制限
されるという欠点があった。また、この動作温度範囲内
で、半導体レーザ装置の発光素子の温度を２５℃に維持
するために電子冷却素子に投入する電力が、駆動ＩＣを
内蔵しないものに比べて７０〜８０％増加するという欠
点があり、所要の性能を実現する上で大きな問題点とな
っている。As described above, the conventional optical transmitter circuit has a drawback in that the operating temperature range is limited to about 0° to 60° C. due to heat leakage from the driving IC. Additionally, within this operating temperature range, the power input to the electronic cooling element to maintain the temperature of the light emitting element of the semiconductor laser device at 25°C increases by 70 to 80% compared to a device without a built-in drive IC. There are drawbacks, which pose major problems in achieving the required performance.
本発明の光送信回路は、同一のパッケージ内に半導体レ
ーザ装置と該半導体レーザ装置の駆動回路とを搭載して
なる光送信回路において、前記駆動回路の放熱用の第１
の放熱器と前記半導体レーザ装置の放熱用の第２の放熱
器とを熱的に分離して配設しである。The optical transmitting circuit of the present invention includes a semiconductor laser device and a driving circuit for the semiconductor laser device mounted in the same package.
The heat sink and the second heat sink for heat radiation of the semiconductor laser device are arranged to be thermally separated from each other.
次に、本発明について、図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は、本発明の第１の実施例の横断面図である。セ
ラミック材のパッケージに搭載した駆動ＩＣ２は、配線
パターンを形成したプリント基板４上に固定されている
。一方、発光素子と電子冷却素子とを内蔵した半導体レ
ーザ装置３は、金属部材で形成したパッケージ１０の内
定面にネジで機械的に固定される。また、駆動ＩＣ２用
の放熱器は、断熱材８を介して駆動ＩＣパッケッジのス
タッドにナツト７で機械的に固定されている。−方、半
導体レーザ装置３用の放熱器６は、パッケージ１０の外
底面にネジ９で固定されている。FIG. 1 is a cross-sectional view of a first embodiment of the invention. The drive IC 2 mounted in a ceramic package is fixed on a printed circuit board 4 on which a wiring pattern is formed. On the other hand, a semiconductor laser device 3 containing a light emitting element and a thermoelectric cooling element is mechanically fixed to an internal surface of a package 10 formed of a metal member with screws. Further, a heat sink for the drive IC 2 is mechanically fixed to a stud of the drive IC package with a nut 7 via a heat insulating material 8. On the other hand, a heat sink 6 for the semiconductor laser device 3 is fixed to the outer bottom surface of the package 10 with screws 9.
本実施例のパッケージ１０は、アルミニウム材で形成し
てあり、放熱器５．６には熱抵抗を低減するためアルミ
ニウムにアルマイト加工を施したものを使用した。パッ
ケージ１０と放熱器５との間に入れた断熱材８には、厚
さ１ｍｍのテフロン樹脂板を用いた。The package 10 of this embodiment is made of aluminum, and the heat sink 5.6 is made of aluminum processed with alumite to reduce thermal resistance. A Teflon resin plate with a thickness of 1 mm was used as the heat insulating material 8 inserted between the package 10 and the heat sink 5.
従来の光送信回路のパッケージでは、第３図に示す如く
パッケージ２２の底面全体に放熱器２０を密着させてい
るので、駆動ＩＣ２で発生した熱は、放熱器２０を介し
てパッケージ２２の外部に伝達されるのと同時に、パッ
ケージ２２底面の温度上昇を引き起こす、このため、駆
動ＩＣ２で発生した熱が、半導体レーザ装置３の放熱面
（パッケージ２２の底面）の温度上昇を引き起こし、半
導体レーザ装置３内部の発光素子温度を上昇させ、発光
素子温度を２５℃程度に制御しようとした場合、周囲温
度００〜６０℃が動作周囲温度の限界であった。In the conventional optical transmitter circuit package, as shown in FIG. 3, the heat radiator 20 is tightly attached to the entire bottom surface of the package 22, so the heat generated by the drive IC 2 is transferred to the outside of the package 22 via the heat radiator 20. At the same time as the heat is transferred, the temperature of the bottom surface of the package 22 increases. Therefore, the heat generated by the drive IC 2 causes a temperature increase of the heat dissipation surface of the semiconductor laser device 3 (the bottom surface of the package 22), When an attempt was made to increase the internal light emitting element temperature and control the light emitting element temperature to about 25° C., the ambient temperature range of 00 to 60° C. was the limit of the operating ambient temperature.
一方、本実施例では、上述したように駆動ＩＣ２用の放
熱器５と半導体レーザ装置３用の放熱器６とが、断熱材
８を介して熱的に分離された構成にしである。このため
、駆動ＩＣ２で発生した熱は、断熱材８の熱抵抗分だけ
パッケージ１０底面に回り込む熱量が低減される。この
結果、半導体レーザ装置３内の発光素子の温度を２５℃
に維持できる動作温度範囲を、−１０°〜７５℃まで広
げることができた。On the other hand, in this embodiment, as described above, the heat sink 5 for the drive IC 2 and the heat sink 6 for the semiconductor laser device 3 are thermally separated via the heat insulating material 8. Therefore, the amount of heat generated by the drive IC 2 that circulates to the bottom surface of the package 10 is reduced by the thermal resistance of the heat insulating material 8. As a result, the temperature of the light emitting element in the semiconductor laser device 3 was reduced to 25°C.
We were able to expand the operating temperature range that can be maintained from -10°C to 75°C.
なお本実施例では、駆動ＩＣ２用の放熱器５とパッケー
ジ１０との間の断熱材８に厚さ１ｍｍのテフロン樹脂板
を用いたが、テフロンと同等、あるいは、それ以上の熱
抵抗を有する材料であれば適用可能であり、本実施例で
述べた材料に限定されるものではない、また、断熱材８
の厚さについても、所要の熱抵抗に応じて変更すれば良
く、１ｍｍに限定されるものではない。In this embodiment, a Teflon resin plate with a thickness of 1 mm was used as the heat insulating material 8 between the heat sink 5 for the drive IC 2 and the package 10, but a material having a thermal resistance equal to or higher than Teflon may also be used. It is applicable if the material is not limited to the materials described in this example.
The thickness may also be changed depending on the required thermal resistance, and is not limited to 1 mm.
また本実施例では、パッケージ１０、及び放熱器５．６
の材料としてアルミニウムを用いたが、他の金属材料に
置き換えることも可能であり、アルミニウムに限定され
るものではない９更に本実施例では、半導体レーザ装置
３として内部に電子冷却素子を内蔵するものを用いたが
、電子冷却素子を内蔵しないものについても同様に適用
可能であり、また駆動ＩＣ２のパッケージとしてスタッ
ドを有するパッケージを用いたが、スタッドのないパッ
ケージを使用する場合についても適用可能である。Further, in this embodiment, the package 10 and the heat sink 5.6
Although aluminum is used as the material, it is possible to replace it with other metal materials, and the material is not limited to aluminum.9Furthermore, in this embodiment, the semiconductor laser device 3 has a built-in electronic cooling element. was used, but it is also applicable to devices that do not have a built-in electronic cooling element. Also, although a package with studs was used as the package for the drive IC 2, it is also applicable to cases where a package without studs is used. .
第２（ａ）及び（ｂ）は、本発明の第２の実施例の横断
面図及び側断面図である。セラミック材のパッケージに
搭載した駆動ＩＣ２は、配線パターンを形成したプリン
ト基板４上に固定される。2(a) and 2(b) are a cross-sectional view and a side sectional view of a second embodiment of the present invention. The drive IC 2 mounted in a ceramic package is fixed onto a printed circuit board 4 on which a wiring pattern is formed.
一方、発光素子と電子冷却素子とを内蔵した半導体レー
ザ装置３は、金属部材で形成したパッケージ１０の底面
に断熱材３０を介してネジ等で機械的に固定される。ま
た、半導体レーザ装置３の一側面は第２図（ｂ）に示す
如くパッケージ１０の内側面に機械的に密着固定されて
いる。一方、駆動ＩＣ２用の放熱器５は、断熱材８を介
して駆動ＩＣパッケージのスタッドにナツト７で機械的
に固定されている。また、半導体レーザ装Ｗ３用の放熱
器６は、パッケージ１０の外底面にネジ９で固定されて
いる。On the other hand, a semiconductor laser device 3 containing a light emitting element and an electronic cooling element is mechanically fixed to the bottom surface of a package 10 made of a metal member with a heat insulating material 30 interposed therebetween using screws or the like. Further, one side surface of the semiconductor laser device 3 is mechanically tightly fixed to the inner surface of the package 10 as shown in FIG. 2(b). On the other hand, a heat sink 5 for the drive IC 2 is mechanically fixed to a stud of the drive IC package with a nut 7 via a heat insulating material 8. Further, the heat sink 6 for the semiconductor laser device W3 is fixed to the outer bottom surface of the package 10 with screws 9.
本実施例でもパッケージ１０は、アルミニウム材で形成
してあり、放熱器５．６にはアルミニウムでアルマイト
加工を施したものを使用した。パッケージ１０と放熱器
５との間に入れた断熱材８、及び半導体レーザ装置３の
底面とパッケージ１０の底面との間に入れた断熱材３０
には、厚さ１ｍｍのテフロン樹脂板を用いた。In this embodiment as well, the package 10 is made of aluminum, and the heat radiator 5.6 is made of alumite processed aluminum. A heat insulating material 8 placed between the package 10 and the heat sink 5, and a heat insulating material 30 placed between the bottom surface of the semiconductor laser device 3 and the bottom surface of the package 10.
A Teflon resin plate with a thickness of 1 mm was used.
本実施例では、駆動ＩＣ２用の放熱器５と半導体レーザ
装置３の放熱器６とが、断熱材８を介して熱的に分離さ
れると共に、半導体レーザ装置、の底面とパッケージ１
０の底面とが、断熱材３０を介して固定される構成とな
っている。このため、駆動ＩＣ２で発生した熱は、断熱
材８の熱抵抗分だけ光送信回路パッケージ１０に回り込
む熱量が低減される。同時に、光送信回路パッケージ１
０の底面を介して半導体レーザ装置３に回り込む熱量は
、断熱材３０によって低減される。この結果、半導体レ
ーザ装置３内の発光素子の温度を２５℃に維持できる動
作温度範囲を、従来のＯ。In this embodiment, a heatsink 5 for the drive IC 2 and a heatsink 6 for the semiconductor laser device 3 are thermally separated via a heat insulating material 8, and the bottom surface of the semiconductor laser device and the package 1
0 is fixed via a heat insulating material 30. Therefore, the amount of heat generated by the drive IC 2 that flows into the optical transmission circuit package 10 is reduced by the thermal resistance of the heat insulating material 8. At the same time, optical transmitter circuit package 1
The amount of heat that goes around to the semiconductor laser device 3 through the bottom surface of the semiconductor laser device 3 is reduced by the heat insulating material 30 . As a result, the operating temperature range in which the temperature of the light emitting element in the semiconductor laser device 3 can be maintained at 25° C. is lower than that of the conventional O.
〜６０℃から一１０″〜８５℃まで広げることができた
。It was possible to extend the temperature from ~60°C to 110″ to 85°C.
以上説明したように本発明は、同一のパッケージ内に半
導体レーザ装置とその駆動回路とを搭載し、両者の放熱
器を熱的に分離することにより、更には半導体レーザ装
置の底面とパッケージとの間に断熱材を入れることによ
り、駆動回路から半導体レーザ装置に回り込む熱量を低
減し、光送信回路の動作温度範囲を従来回路よりも広げ
る効果がある。As explained above, the present invention mounts a semiconductor laser device and its driving circuit in the same package, thermally separates the heat sinks of both, and further improves the connection between the bottom surface of the semiconductor laser device and the package. By inserting a heat insulating material between them, the amount of heat that circulates from the drive circuit to the semiconductor laser device is reduced, and the operating temperature range of the optical transmitter circuit is expanded compared to conventional circuits.
第１図及び第２図（ａ）は本発明の実施例を示す横断面
図、第２図（ｂ）は本発明の実施例の断面図、第３図は
従来例の光送信回路を示す横断面図である。
２・・・駆動回路（駆動ＩＣ）、３・・・半導体レーザ
装置、４・・・プリント基板、５．６・・・放熱器、７
・・・ナツト、８．３０・・・断熱材、９・・・ネジ、
１０・・・パッケージ。1 and 2(a) are cross-sectional views showing an embodiment of the present invention, FIG. 2(b) is a sectional view of an embodiment of the present invention, and FIG. 3 is a conventional optical transmitter circuit. FIG. 2... Drive circuit (drive IC), 3... Semiconductor laser device, 4... Printed circuit board, 5.6... Heat sink, 7
... Nut, 8.30 ... Insulation material, 9 ... Screw,
10...Package.
Claims (1)
レーザ装置の駆動回路とを搭載してなる光送信回路にお
いて、前記駆動回路の放熱用の第１の放熱器と前記半導
体レーザ装置の放熱用の第２の放熱器とを熱的に分離し
て配設してあることを特徴とする光送信回路。 ２、前記半導体レーザ装置は該半導体レーザ装置のパッ
ケージ内部に電子冷却素子を内蔵し、該半導体レーザ装
置のパッケージ側面が放熱面となる構造を有する特許請
求の範囲第１項記載の光送信回路。 ３、前記半導体レーザ装置の底面は、断熱板を介して前
記パッケージの底面に固定されている特許請求の範囲第
１項記載の光送信回路。 ４、前記半導体レーザ装置のパッケージの少なくとも一
側面が前記パッケージに密着固定されている特許請求の
範囲第１項記載の光送信回路。 ５、前記駆動回路は、シリコンあるいはガリウムヒ素の
集積回路からなり、セラミックパッケージに搭載されて
いる特許請求の範囲第１項記載の光送信回路。[Scope of Claims] 1. In an optical transmission circuit including a semiconductor laser device and a drive circuit for the semiconductor laser device mounted in the same package, a first heat sink for heat dissipation of the drive circuit and the semiconductor laser device; An optical transmission circuit characterized in that the optical transmission circuit is arranged thermally separated from a second heat radiator for heat radiation of a laser device. 2. The optical transmitter circuit according to claim 1, wherein the semiconductor laser device has a structure in which an electronic cooling element is built into a package of the semiconductor laser device, and a side surface of the package of the semiconductor laser device serves as a heat radiation surface. 3. The optical transmitter circuit according to claim 1, wherein the bottom surface of the semiconductor laser device is fixed to the bottom surface of the package via a heat insulating plate. 4. The optical transmitter circuit according to claim 1, wherein at least one side of the package of the semiconductor laser device is closely fixed to the package. 5. The optical transmission circuit according to claim 1, wherein the drive circuit is made of a silicon or gallium arsenide integrated circuit and is mounted in a ceramic package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2043202A JPH03245586A (en) | 1990-02-23 | 1990-02-23 | Optical transmission circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2043202A JPH03245586A (en) | 1990-02-23 | 1990-02-23 | Optical transmission circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03245586A true JPH03245586A (en) | 1991-11-01 |
Family
ID=12657347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2043202A Pending JPH03245586A (en) | 1990-02-23 | 1990-02-23 | Optical transmission circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03245586A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0650373U (en) * | 1992-06-12 | 1994-07-08 | 八重洲無線株式会社 | Laser diode mounting structure |
| EP0608901A2 (en) * | 1993-01-29 | 1994-08-03 | Canon Kabushiki Kaisha | A laser unit |
| US6477284B1 (en) | 1999-06-14 | 2002-11-05 | Nec Corporation | Photo-electric combined substrate, optical waveguide and manufacturing process therefor |
| JP2003158330A (en) * | 2001-11-21 | 2003-05-30 | Opnext Japan Inc | Semiconductor laser coupler |
| JP2003304026A (en) * | 2002-04-09 | 2003-10-24 | Sumitomo Electric Ind Ltd | Optical module |
| JP2005513815A (en) * | 2001-12-29 | 2005-05-12 | 杭州富陽新穎電子有限公司 | Light emitting diode and light emitting diode lamp |
| JP2007012856A (en) * | 2005-06-30 | 2007-01-18 | Toyoda Gosei Co Ltd | Led apparatus and housing therefor |
| JP2015115457A (en) * | 2013-12-11 | 2015-06-22 | 日本碍子株式会社 | External resonator light-emitting device |
| JP2016072338A (en) * | 2014-09-29 | 2016-05-09 | ブラザー工業株式会社 | Laser module, laser oscillator and laser processing apparatus |
-
1990
- 1990-02-23 JP JP2043202A patent/JPH03245586A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0650373U (en) * | 1992-06-12 | 1994-07-08 | 八重洲無線株式会社 | Laser diode mounting structure |
| EP0608901A2 (en) * | 1993-01-29 | 1994-08-03 | Canon Kabushiki Kaisha | A laser unit |
| EP0608901A3 (en) * | 1993-01-29 | 1994-10-12 | Canon Kk | A laser unit. |
| US5490158A (en) * | 1993-01-29 | 1996-02-06 | Canon Kabushiki Kaisha | Laser unit |
| US6477284B1 (en) | 1999-06-14 | 2002-11-05 | Nec Corporation | Photo-electric combined substrate, optical waveguide and manufacturing process therefor |
| JP2003158330A (en) * | 2001-11-21 | 2003-05-30 | Opnext Japan Inc | Semiconductor laser coupler |
| JP2005513815A (en) * | 2001-12-29 | 2005-05-12 | 杭州富陽新穎電子有限公司 | Light emitting diode and light emitting diode lamp |
| JP2003304026A (en) * | 2002-04-09 | 2003-10-24 | Sumitomo Electric Ind Ltd | Optical module |
| JP2007012856A (en) * | 2005-06-30 | 2007-01-18 | Toyoda Gosei Co Ltd | Led apparatus and housing therefor |
| JP2015115457A (en) * | 2013-12-11 | 2015-06-22 | 日本碍子株式会社 | External resonator light-emitting device |
| JP2016072338A (en) * | 2014-09-29 | 2016-05-09 | ブラザー工業株式会社 | Laser module, laser oscillator and laser processing apparatus |
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