JPH03237735A - Tab tape - Google Patents
Tab tapeInfo
- Publication number
- JPH03237735A JPH03237735A JP20018390A JP20018390A JPH03237735A JP H03237735 A JPH03237735 A JP H03237735A JP 20018390 A JP20018390 A JP 20018390A JP 20018390 A JP20018390 A JP 20018390A JP H03237735 A JPH03237735 A JP H03237735A
- Authority
- JP
- Japan
- Prior art keywords
- plating film
- tin
- film
- nickel
- tab tape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 28
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 20
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 229910052802 copper Inorganic materials 0.000 claims abstract description 14
- 239000010949 copper Substances 0.000 claims abstract description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052737 gold Inorganic materials 0.000 claims abstract description 12
- 239000010931 gold Substances 0.000 claims abstract description 12
- 229910052709 silver Inorganic materials 0.000 claims abstract description 12
- 239000004332 silver Substances 0.000 claims abstract description 12
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 11
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 11
- 239000010948 rhodium Substances 0.000 claims abstract description 11
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 10
- 239000010941 cobalt Substances 0.000 claims abstract description 10
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 10
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 10
- 238000007747 plating Methods 0.000 claims description 109
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 47
- 229910000679 solder Inorganic materials 0.000 claims description 21
- 229910000531 Co alloy Inorganic materials 0.000 claims description 12
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 6
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 4
- KVCNTPMIAMJSNS-UHFFFAOYSA-N [Co][Ni][Sn] Chemical compound [Co][Ni][Sn] KVCNTPMIAMJSNS-UHFFFAOYSA-N 0.000 claims description 4
- WDHWFGNRFMPTQS-UHFFFAOYSA-N cobalt tin Chemical compound [Co].[Sn] WDHWFGNRFMPTQS-UHFFFAOYSA-N 0.000 claims description 4
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 claims description 4
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 claims description 2
- 239000011889 copper foil Substances 0.000 abstract description 14
- 239000004020 conductor Substances 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 4
- 229910000510 noble metal Inorganic materials 0.000 abstract description 4
- 238000005275 alloying Methods 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 238000005476 soldering Methods 0.000 description 13
- 238000000576 coating method Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 239000000956 alloy Substances 0.000 description 4
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000006023 eutectic alloy Substances 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 235000001270 Allium sibiricum Nutrition 0.000 description 1
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Landscapes
- Manufacturing Of Printed Wiring (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はＴＡＢ （Ｔａｐｅ Ａｕｔｏｅｅａｔｅｄ
Ｂｏｎｄｉｎｇ）テープに関する。[Detailed description of the invention] (Industrial application field) The present invention is based on TAB (Tape Autoeated
(Bonding) tape.
（従来の技術）
ＴＡＢテープは半導体素子と外部接続用リード等の外部
導体回路とを電気的に接続するもので、銅箔を用いて微
細なパターンに形成しうろことから、ワイヤを用いて接
続するよりも多ピンの接続が可能となる。(Prior art) TAB tape is used to electrically connect semiconductor elements and external conductor circuits such as external connection leads, and since it is formed into a fine pattern using copper foil, it is possible to connect using wire. It is possible to connect more pins than when
ＴＡＢテープのインナーリードと半導体素子との接合は
、半導体素子に形成した金等のバンプとの間で金−錫共
晶合金による場合が多く、そのためにＴＡＢテープは銅
箔で形成されたリードパターン上に錫めっき皮膜を形成
したものが用いられる。またＴＡＢテープの外部接続用
のアウターリードと外部導体回路との間は、通常錫めっ
き皮膜を利用してはんだ付けにより接合されている。The bond between the inner lead of TAB tape and the semiconductor element is often made using a gold-tin eutectic alloy between the bumps formed on the semiconductor element, such as gold. Therefore, TAB tape has a lead pattern formed of copper foil. A material with a tin plating film formed thereon is used. Further, the outer lead for external connection of the TAB tape and the external conductor circuit are usually joined by soldering using a tin plating film.
（発明が解決しようとする課題）
しかしながら上記のＴＡＢテープには次のような問題点
がある。(Problems to be Solved by the Invention) However, the above TAB tape has the following problems.
すなわち、半導体素子とＴＡＢテープのインナーリード
とを金−錫共晶合金によって接合する際には４００℃〜
５００°Ｃの高温のボンディング条件が必要となる。こ
のインナーリードに加わる熱は直ちにＴＡＢテープのア
ウターリードに伝わってアウターリードが加熱され、こ
のため、アウターリード素材の銅が錫めっき皮膜中に拡
散するという問題が生じる。銅が錫めっき皮膜中に拡散
すると、結果的に錫めっきを行わなかったのと等しくな
り、アウターリードと外部導体回路とのはんだ付は性が
阻害されるという問題が生じる。また−時的にアウター
リードと外部導体回路との接合がなされても、もともと
銅は鍋中へ拡散しやすい性質を有するため、経時的に銅
の錫めっき皮膜中への拡散が生じるため、はんだ付は強
度が次第に劣化し、剥離が生じるという本質的な欠陥が
ある。That is, when bonding the semiconductor element and the inner lead of the TAB tape using a gold-tin eutectic alloy, the temperature is 400°C or more.
A high temperature bonding condition of 500°C is required. The heat applied to the inner lead is immediately transmitted to the outer lead of the TAB tape and the outer lead is heated, resulting in a problem that the copper of the outer lead material diffuses into the tin plating film. When copper diffuses into the tin plating film, the result is the same as if no tin plating was performed, and a problem arises in that soldering between the outer lead and the external conductor circuit is impaired. In addition, even if the outer lead and the external conductor circuit are bonded over time, since copper has a tendency to easily diffuse into the pot, copper will diffuse into the tin plating film over time. The inherent flaw in bonding is that the strength gradually deteriorates and peeling occurs.
錫めっき皮膜を厚くすれば、上記の問題点もある程度解
消しうるが、厚付けすると、半導体素子とインナーリー
ドとの金−錫共晶合金による接合の際、錫分が余り、こ
の余分な錫分が流れ出してインナーリード間を短絡させ
るおそれがある′。このため錫めっき皮膜の厚さは０．
５μ−程度と極めて薄いのが現状である。The above problems can be solved to some extent by making the tin plating film thicker, but if the tin plating film is made thicker, there will be excess tin when bonding the semiconductor element and the inner lead using the gold-tin eutectic alloy. There is a risk that the liquid may flow out and cause a short circuit between the inner leads. Therefore, the thickness of the tin plating film is 0.
At present, it is extremely thin, about 5μ.
また一方、インナーリードを半導体素子に接合する際は
、ボンディングツールによりインナーリードを外方から
押圧して半導体素子に圧着せしめるため、溶融した錫等
がボンディングツールに付着し、このためひんばんにボ
ンディングツールのクリーニングを行うことを余儀なく
され、ひどい場合にはボンディングが不可能となる問題
点もある。On the other hand, when bonding the inner lead to the semiconductor element, the bonding tool presses the inner lead from the outside and presses it onto the semiconductor element, so molten tin etc. adheres to the bonding tool, which makes the bonding process difficult. There is also the problem that the tool must be cleaned, and in severe cases, bonding becomes impossible.
本発明は上記の問題点を解消すべくなされたものであり
、その目的とするところは、銅の錫めっき皮膜中への拡
散を防止して、外部接続用のアウターリードと外部導体
回路とのはんだ付は性が良好となり、またボンディング
ツールへの錫等の付着が防止できるＴＡＢテープを提供
するにある。The present invention has been made to solve the above problems, and its purpose is to prevent the diffusion of copper into the tin plating film and to connect the outer lead for external connection and the external conductor circuit. It is an object of the present invention to provide a TAB tape that has good soldering properties and can prevent tin and the like from adhering to bonding tools.
（課題を解決するための手段）
上記目的による本発明に係るＴＡＢテープでは、銅また
は銅合金により接続用回路パターンが形成され、インナ
ーリードおよびアウターリード上に錫めっき皮膜または
はんだめっき皮膜が形成されているＴＡＢテープにおい
て、少なくともアウターリード上に錫めっき皮膜または
はんだめっき皮膜の下地としてニッケル、コバルト、金
、銀、白金、パラジウム、ロジウムから選ばれる金属に
よるめっき皮膜が形成されていることを特徴としている
。また、銅または銅合金により接続用回路パターンが形
成され、インナーリードおよびアウターリード上に錫め
っき皮膜またははんだめっき皮膜が形成されているＴＡ
Ｂテープにおいて、少なくともアウターリード上に錫め
っき皮膜またははんだめっき皮膜の下地として、ニッケ
ル、コバルト、錫−ニッケル合金、錫−コバルト合金、
ニラ１）−ルーコバルト合金、錫−ニッケル−コバルト
合金から選ばれる金属による第１のめっき皮膜と、この
第１のめっき皮膜上に形成される、金、銀、白金、パラ
ジウム、ロジウムから選ばれる金属による第２のめっき
皮膜とが形成されていることを特徴としている。(Means for Solving the Problems) In the TAB tape according to the present invention for the above-mentioned purpose, a connection circuit pattern is formed of copper or a copper alloy, and a tin plating film or a solder plating film is formed on the inner lead and the outer lead. The TAB tape is characterized in that a plating film made of a metal selected from nickel, cobalt, gold, silver, platinum, palladium, and rhodium is formed on at least the outer lead as a base for a tin plating film or a solder plating film. There is. In addition, TA has a connection circuit pattern formed of copper or copper alloy, and a tin plating film or a solder plating film is formed on the inner lead and outer lead.
In the B tape, nickel, cobalt, tin-nickel alloy, tin-cobalt alloy,
Chive 1) - A first plating film made of a metal selected from a leu-cobalt alloy and a tin-nickel-cobalt alloy, and a metal selected from gold, silver, platinum, palladium, and rhodium formed on this first plating film. It is characterized in that a second plating film made of metal is formed.
インナーリードに形成する錫めっき皮膜またははんだめ
っき皮膜は半導体素子と接合する側の片面にのみ形成す
ると好適である。It is preferable that the tin plating film or the solder plating film formed on the inner lead be formed only on one side of the inner lead that is to be bonded to the semiconductor element.
第１図はＴＡＢテープの断面図を示し、ポリイミド等の
耐熱性を有する支持フィルム１０上に形成されている銅
箔をエツチングして接続回路パターンが形成されている
。１２はそのインナーリ一ド、１３はアウターリードで
ある。なお銅箔は鋼材もしくは銅合金材からなる。FIG. 1 shows a cross-sectional view of the TAB tape, in which a connection circuit pattern is formed by etching a copper foil formed on a support film 10 having heat resistance such as polyimide. 12 is its inner lead, and 13 is its outer lead. Note that the copper foil is made of steel or copper alloy material.
本発明の第１の発明に係るＴＡＢテープでは、接続回路
パターンのｗ４箔上に、第２図に示されるように、めっ
き皮膜１４を介して錫めっき皮膜１６を形成する。In the TAB tape according to the first aspect of the present invention, a tin plating film 16 is formed on the W4 foil of the connection circuit pattern via a plating film 14, as shown in FIG.
このめっき皮膜１４は、半導体素子とインナーリードと
の接合の際加わる４００”Ｃ〜５００°Ｃの高温条件下
にあっても、上層の錫めっき皮膜１６と合金化しにくい
金属あるいは合金化によりはんだ付は性を低下させない
金属皮膜から選択される。このような金属皮膜は金、銀
、白金、パラジウム、ロジウムの貴金属皮膜およびニッ
ケル、コバルト皮膜である。This plating film 14 is made of a metal that is difficult to alloy with the upper tin plating film 16 or is made of an alloy, even under high temperature conditions of 400" to 500°C applied when bonding the semiconductor element and the inner lead. is selected from metal coatings that do not reduce properties. Such metal coatings are noble metal coatings of gold, silver, platinum, palladium, rhodium, and coatings of nickel and cobalt.
このようなめっき皮膜１４を直接銅箔上に形成した場合
、十分な厚みがない場合には、銅がやはりめっき皮膜１
４中に拡散してしまう。そこで上記の高温下にあっても
銅が上層の錫めっき皮膜１６に拡散しない程度の十分な
厚みを持つものとする。When such a plating film 14 is formed directly on copper foil, if the thickness is not sufficient, the copper will still form on the plating film 1.
It will spread during the 4th. Therefore, the thickness should be sufficient to prevent copper from diffusing into the upper tin plating film 16 even under the above-mentioned high temperature.
錫めっき皮膜１６の下地としての上記めっき皮膜１４は
少なくともアウターリードに形成すればよい、またイン
ナーリード側の錫めっき皮膜１６は半導体素子と接合す
る側の片面にのみ形成すると好適である。The plating film 14 as a base for the tin plating film 16 may be formed at least on the outer lead, and it is preferable that the tin plating film 16 on the inner lead side is formed only on one side of the inner lead to be bonded to the semiconductor element.
本発明の第２の発明に係るＴＡＢテープでは、接続回路
パターンの銅箔上に、第３図に示されるように、第１の
めっき皮膜１８、第２のめっき皮膜２０を介して電解め
っきによる錫めっき皮膜２２を形成する。In the TAB tape according to the second aspect of the present invention, as shown in FIG. A tin plating film 22 is formed.
第１のめっき皮膜１８は、半導体素子とインナーリード
１２との接合の際加わる、４００°Ｃ〜５００°Ｃの高
温下にあっても、素材の銅が当該第１のめっき皮膜１８
中に拡散しにくい金属皮膜とする。The first plating film 18 can be used even under the high temperature of 400°C to 500°C that is applied when the semiconductor element and the inner lead 12 are bonded.
The metal film is difficult to diffuse inside.
このような第１のめっき皮膜１８は、ニッケル、コバル
ト、錫−ニッケル合金、錫−コバルト合金、ニッケル−
コバルト合金、および錫−ニッケル−コバルト合金のめ
っき皮膜中より選択される。Such a first plating film 18 is made of nickel, cobalt, tin-nickel alloy, tin-cobalt alloy, nickel-
It is selected from plating films of cobalt alloys and tin-nickel-cobalt alloys.
上記の第１のめっき皮膜１８と錫めっき皮膜２２の合金
化を防止するため、第１のめっき皮膜１８と錫めっき皮
膜２２との間に第２のめっき皮膜２０を介在させる。こ
の第２のめっき皮膜２０は、前記の高温条件下にあって
も、下層の第１のめっき皮膜１８、上層の錫めっき皮１
ＩＩ２０の各々と合金化しない金属皮膜もしくは合金化
によりはんだ付は性を低下させない金属皮膜から選択さ
れる。In order to prevent alloying of the first plating film 18 and the tin plating film 22, a second plating film 20 is interposed between the first plating film 18 and the tin plating film 22. Even under the above-mentioned high-temperature conditions, this second plating film 20 can be removed from the lower first plating film 18 and the upper tin plating film 1.
The metal coatings are selected from metal coatings that do not alloy with each of II20 or whose alloying does not reduce solderability.
このような金属皮膜は、金、銀、白金、パラジウム、ロ
ジウムの貴金属皮膜である。Such metal coatings are noble metal coatings of gold, silver, platinum, palladium, and rhodium.
錫めっき皮膜２２の下地としての上記第１のめっき皮膜
１８および第２のめっき皮膜２０は少なくともアウター
リードに形成すればよい。またインナーリード側の錫め
っき皮膜２２は半導体素子と接合する側の片面にのみ形
成すると好適である。The first plating film 18 and the second plating film 20 as a base for the tin plating film 22 may be formed on at least the outer leads. Further, it is preferable that the tin plating film 22 on the inner lead side is formed only on one side of the inner lead which will be bonded to the semiconductor element.
錫めっき皮膜１６および２２は従来のように銅箔上に直
接にめっきする場合は無電解めっきによって形成できる
が、上記のように下地が貴金属皮膜のときは無電解めっ
きでは形成できないので電解めっきによって形成する。The tin plating films 16 and 22 can be formed by electroless plating when directly plating on copper foil as in the past, but when the base is a noble metal film as mentioned above, they cannot be formed by electroless plating, so they can be formed by electrolytic plating. Form.
なお、錫めっき皮膜１６および２２の代りに、はんだめ
っき皮膜゛を形成してもよい。この場合にも、素材の銅
のはんだめっき皮膜への拡散の防止と、良好なはんだ付
は性を得ることができる。Note that a solder plating film may be formed instead of the tin plating films 16 and 22. In this case as well, prevention of diffusion of the copper material into the solder plating film and good soldering properties can be achieved.
各層のめっき厚は特に限定されないが、第２図のめっき
皮膜１４は０．１μＩＩ〜３．０μ蹟、第３図の第１の
めっき皮膜１８は０．１μ−〜１．５μｍ、第２のめっ
き皮膜２０は０．０１μｍ ” １．０μｎ程度が良好
である。また錫めっき皮膜１６．２２あるいははんだめ
っき皮膜は、半導体素子付時の流れ出しを防止するため
１μ−以下が好ましい。The plating thickness of each layer is not particularly limited, but the plating film 14 in FIG. 2 has a thickness of 0.1 μII to 3.0 μm, the first plating film 18 in FIG. The plating film 20 preferably has a thickness of about 0.01 .mu.m and 1.0 .mu.m.The tin plating film 16, 22 or the solder plating film preferably has a thickness of 1 .mu.m or less in order to prevent run-off when attaching a semiconductor element.
（実施例） 以下に具体的実施例を示す。(Example) Specific examples are shown below.
実施例１
銅箔上に直接錫めっき皮膜を０．５μｍ形成した比較例
１と、銅箔上に中間めっき皮膜として銀めっき皮膜を１
，０μ剛形成し、その上に錫めっき皮膜を０．５μ−形
成した実施例１の各々のＴＡＢテープを２２０°Ｃで１
時間加熱した後、２５０°Ｃのはんだ中に浸漬した。そ
の際のはんだ付は性をソルダーチエッカ−で比較したデ
ータを表１に示す。なお、濡れ応力は７秒後の値を用い
た。Example 1 Comparative Example 1 in which a 0.5 μm tin plating film was directly formed on copper foil, and 1 in which a silver plating film was formed as an intermediate plating film on copper foil.
, 0μ stiffness, and a tin plating film of 0.5μ stiffness was formed on the TAB tape of Example 1 at 220°C.
After heating for an hour, it was immersed in solder at 250°C. Table 1 shows the data of comparing the soldering performance using a solder checker. In addition, the value after 7 seconds was used as the wetting stress.
表
ＡＢテープを５００°Ｃで２秒間加熱した後、２５０°
Ｃのはんだ中に浸漬した。その際のはんだ付は性を実施
例１と同様にソルダーチエッカ−で比較したデータを表
２に示す。Table AB tape was heated at 500°C for 2 seconds, then heated to 250°C.
It was immersed in solder C. At that time, the soldering properties were compared using the same solder checker as in Example 1, and the data are shown in Table 2.
表 ２
表１から明らかなように、比較例１に比して実施例Ｉの
方が良好なはんだ付は性が得られている。Table 2 As is clear from Table 1, better soldering properties were obtained in Example I than in Comparative Example 1.
実施例１で銀めっき皮膜の代わりに、ニッケル、コバル
ト、金、白金、あるいはロジウムの各めっき皮膜を形成
した場合も上記と同様の良好な結果を得た。Similar good results were obtained when a nickel, cobalt, gold, platinum, or rhodium plating film was formed in place of the silver plating film in Example 1.
実施例２
銅箔上に直接錫めっき皮膜を０．５μｍ形成した比較例
２と、銅箔上に第１のめっき皮膜としてニッケルめっき
皮膜を０．５μｍ形成し、その上に第２のめっき皮膜と
してパラジウムめっき皮膜を０．１μ−形成し、さらに
その上に錫めっき皮膜を０．５μｍ形成した実施例２の
各々のＴ表２から明らかなように、比較例２に比して実
施例２の方がはんだ付は性が良好であった。Example 2 Comparative Example 2 in which a 0.5 μm tin plating film was directly formed on the copper foil, and a 0.5 μm nickel plating film was formed on the copper foil as the first plating film, and a second plating film was formed on it. As is clear from each T table 2 of Example 2, in which a palladium plating film of 0.1 μm was formed and a tin plating film of 0.5 μm was further formed thereon, Example 2 was superior to Comparative Example 2. The soldering properties were better.
実施例２で、第１のめっき皮膜をコバルトめっき皮膜に
した場合、また第２のめっき皮膜を金、銀、白金、ある
いはロジウムの各めっき皮膜にしても上記と同様の良好
な結果を得た。In Example 2, when the first plating film was a cobalt plating film, and the second plating film was a gold, silver, platinum, or rhodium plating film, the same good results as above were obtained. .
実施例３
銅箔上に直接錫めっき皮膜を０．５μｍ形成した比較例
３と、銅箔上に第１のめっき皮膜として錫−ニッケル合
金皮膜を０．５μｍ形成し、その上に第２のめっき皮膜
として金めつき皮膜を０、ｌ＃■形成形成さらにその上
に錫めっき皮膜を０．５μｍ形成した実施例３の各々の
ＴＡＢテープを２２０°Ｃで１時間加熱した後、２５０
℃のはんだ中に浸漬した。その際のはんだ付は性を実施
例１と同様にソルダーチエッカ−で比較したデータを表
３に示す。Example 3 Comparative Example 3 in which a tin plating film of 0.5 μm was directly formed on copper foil, and a tin-nickel alloy film of 0.5 μm in thickness was formed as a first plating film on copper foil, and a second plating film was formed on the copper foil. Each of the TAB tapes of Example 3, in which a gold plating film was formed with a thickness of 0 and 1#■ and a tin plating film was formed thereon with a thickness of 0.5 μm, was heated at 220°C for 1 hour, and then heated to 250°C.
℃ immersed in solder. At that time, the soldering performance was compared using a solder checker in the same manner as in Example 1, and the data is shown in Table 3.
表 ３
表３から明らかなように、比較例３に比して実施例３の
方が良好なはんだ付は性が得られている。Table 3 As is clear from Table 3, better soldering properties were obtained in Example 3 than in Comparative Example 3.
また実施例３で、第１のめっき皮膜を錫−コバルト合金
、ニッケル−コバルト合金、錫−ニッケル−コバルト合
金の各めっき皮膜にした場合、および第２のめっき皮膜
を銀、白金、パラジウム、ロジウムにした場合も良好な
はんだ付は性が得られた。Further, in Example 3, when the first plating film is a tin-cobalt alloy, nickel-cobalt alloy, or tin-nickel-cobalt alloy plating film, and the second plating film is silver, platinum, palladium, or rhodium. Good soldering properties were also obtained when using the same method.
また上記各実施例において、錫めっき皮膜の代りにはん
だめっき皮膜にしても良好なはんだ付は性が得られた。Furthermore, in each of the above examples, good soldering properties were obtained even when a solder plating film was used instead of the tin plating film.
さらに上記各実施例において、インナーリードに錫めっ
き皮膜を半導体素子と接合する側の片面にのみ形成し、
ボンディングツール側には形成しなかったところ、ボン
ディングツールに錫あるいは金−錫が付着せず、良好に
インナーリードのボンディングが行えた。Furthermore, in each of the above embodiments, a tin plating film is formed on only one side of the inner lead on the side to be bonded to the semiconductor element,
When it was not formed on the bonding tool side, tin or gold-tin did not adhere to the bonding tool, and inner leads could be bonded well.
以上、本発明につき好適な実施例を挙げて種々説明した
が、本発明はこの実施例に限定されるものではなく、発
明の精神を逸脱しない範囲内で多くの改変を施し得るの
はもちろんのことである。The present invention has been variously explained above with reference to preferred embodiments, but the present invention is not limited to these embodiments, and it goes without saying that many modifications can be made without departing from the spirit of the invention. That's true.
（発明の効果）
以上のように本発明によれば、銅または銅合金よりなる
接続用回路パターンと錫めっき皮膜もしくははんだめっ
き皮膜の間に上記しためっき皮膜を介在させることによ
って、４００℃〜５００℃程度の高温条件が加わっても
、良好なはんだ付は性が得られる。(Effects of the Invention) As described above, according to the present invention, by interposing the above-mentioned plating film between the connection circuit pattern made of copper or copper alloy and the tin plating film or the solder plating film, Good soldering properties can be obtained even under high-temperature conditions of approximately ℃.
またインナーリードに半導体素子と接合する側の片面に
のみ錫めっき皮膜あるいははんだめっき皮膜を形成する
ことによって、ボンディングツールにこれら金属が付着
せず、インナーリードのボンディングが良好に行なえる
。Furthermore, by forming a tin plating film or a solder plating film only on one side of the inner lead to be bonded to the semiconductor element, these metals do not adhere to the bonding tool, and bonding of the inner lead can be performed satisfactorily.
第１図はＴＡＢテープの断面説明図、第２図および第３
図は接続回路パターンの断面図を示す。
１０・・・支持フィルム、 １２・・・インナーリー
ド、 １３・ ・ ・アウターリード、１４・・・め
っき被膜、 １日・・・第１のめっき皮膜、 ２０・・
・第２のめっき皮膜、１６．２２・・錫めっき皮膜。Figure 1 is an explanatory cross-sectional view of TAB tape, Figures 2 and 3
The figure shows a cross-sectional view of the connection circuit pattern. DESCRIPTION OF SYMBOLS 10... Support film, 12... Inner lead, 13... Outer lead, 14... Plating film, 1st... First plating film, 20...
-Second plating film, 16.22...Tin plating film.
Claims (1)
れ、インナーリードおよびアウターリード上に錫めっき
皮膜またははんだめっき皮膜が形成されているＴＡＢテ
ープにおいて、少なくともアウターリード上に錫めっき
皮 膜またははんだめっき皮膜の下地としてニッケル、コバ
ルト、金、銀、白金、パラジウム、ロジウムから選ばれ
る金属によるめっき皮膜が形成されていることを特徴と
するＴＡＢテープ。 ２、銅または銅合金により接続用回路パターンが形成さ
れ、インナーリードおよびアウターリード上に錫めっき
皮膜またははんだめっき皮膜が形成されているＴＡＢテ
ープにおいて、少なくともアウターリード上に、錫めっ
き 皮膜またははんだめっき皮膜の下地として、ニッケル、
コバルト、錫−ニッケル合金、錫−コバルト合金、ニッ
ケル−コバルト合金、錫−ニッケル−コバルト合金から
選ばれる金属による第１のめっき皮膜と、この第１のめ
っき皮膜上に形成される、金、銀、白金、パラジウム、
ロジウムから選ばれる金属による第２のめっき皮膜とが
形成されていることを特徴とするＴＡＢテープ。 ３、インナーリードに形成されている錫めっき皮膜また
ははんだめっき皮膜がインナーリードの半導体素子と接
合する側の片面にのみ形成されていることを特徴とする
請求項２または３記載のＴＡＢテープ。[Claims] 1. In a TAB tape in which a connection circuit pattern is formed of copper or a copper alloy and a tin plating film or a solder plating film is formed on the inner lead and the outer lead, tin is formed on at least the outer lead. A TAB tape characterized in that a plating film of a metal selected from nickel, cobalt, gold, silver, platinum, palladium, and rhodium is formed as a base for a plating film or a solder plating film. 2. In a TAB tape in which a connection circuit pattern is formed of copper or a copper alloy, and a tin plating film or a solder plating film is formed on the inner lead and the outer lead, at least the outer lead is coated with a tin plating film or a solder plating film. As a base for the film, nickel,
A first plating film made of a metal selected from cobalt, tin-nickel alloy, tin-cobalt alloy, nickel-cobalt alloy, and tin-nickel-cobalt alloy, and gold and silver formed on the first plating film. , platinum, palladium,
A TAB tape comprising a second plating film made of a metal selected from rhodium. 3. The TAB tape according to claim 2 or 3, wherein the tin plating film or the solder plating film formed on the inner lead is formed only on one side of the inner lead on the side to be bonded to the semiconductor element.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910012686A KR950008697B1 (en) | 1990-07-27 | 1991-07-24 | Tab tape |
| EP19910306787 EP0468787A3 (en) | 1990-07-27 | 1991-07-25 | Tape automated bonding in semiconductor technique |
| US08/166,620 US5384204A (en) | 1990-07-27 | 1993-12-14 | Tape automated bonding in semiconductor technique |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1-327987 | 1989-12-18 | ||
| JP32798789 | 1989-12-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03237735A true JPH03237735A (en) | 1991-10-23 |
| JP2892455B2 JP2892455B2 (en) | 1999-05-17 |
Family
ID=18205236
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20018390A Expired - Fee Related JP2892455B2 (en) | 1989-12-18 | 1990-07-27 | TAB tape |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2892455B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05327187A (en) * | 1992-05-18 | 1993-12-10 | Ishihara Chem Co Ltd | Printed circuit board and manufacture thereof |
| JPH06350227A (en) * | 1993-06-08 | 1994-12-22 | Nec Corp | Surface treating method for printed wiring board |
| JPH0878472A (en) * | 1994-09-05 | 1996-03-22 | Hitachi Cable Ltd | Semiconductor device and base body therefor |
| JP2005264261A (en) * | 2004-03-19 | 2005-09-29 | Oriental Mekki Kk | Electronic component material |
-
1990
- 1990-07-27 JP JP20018390A patent/JP2892455B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05327187A (en) * | 1992-05-18 | 1993-12-10 | Ishihara Chem Co Ltd | Printed circuit board and manufacture thereof |
| JPH06350227A (en) * | 1993-06-08 | 1994-12-22 | Nec Corp | Surface treating method for printed wiring board |
| JPH0878472A (en) * | 1994-09-05 | 1996-03-22 | Hitachi Cable Ltd | Semiconductor device and base body therefor |
| JP2005264261A (en) * | 2004-03-19 | 2005-09-29 | Oriental Mekki Kk | Electronic component material |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2892455B2 (en) | 1999-05-17 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |