JPH0323633A - Dry etching - Google Patents
Dry etchingInfo
- Publication number
- JPH0323633A JPH0323633A JP15866789A JP15866789A JPH0323633A JP H0323633 A JPH0323633 A JP H0323633A JP 15866789 A JP15866789 A JP 15866789A JP 15866789 A JP15866789 A JP 15866789A JP H0323633 A JPH0323633 A JP H0323633A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mixed gas
- chloride
- wiring
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001312 dry etching Methods 0.000 title claims description 14
- 239000010408 film Substances 0.000 claims abstract description 21
- 239000007789 gas Substances 0.000 claims abstract description 20
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 13
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 5
- 239000011261 inert gas Substances 0.000 claims abstract description 5
- 239000010409 thin film Substances 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910000838 Al alloy Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 abstract description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052786 argon Inorganic materials 0.000 abstract description 3
- 230000001681 protective effect Effects 0.000 abstract description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 abstract description 2
- 229910015844 BCl3 Inorganic materials 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical group Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上や利用分野
本発明は、半導体集積回路や薄膜デバイス等の製造プロ
セスに使用されるアルζニウム（以後Ａｌと記す。）も
しくはＡｌ合金のドライエッチング方法に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a dry etching method for aluminum ζ (hereinafter referred to as Al) or Al alloy used in the manufacturing process of semiconductor integrated circuits, thin film devices, etc. be.
従来の技術
近年、半導体集積回路や薄膜デバイスは高集積化が進み
、そのため高精度の微細加工が要求されている。第２図
は従来から使用されている反応性イオンエッチングで用
いる装置である。反応室７の内部に反応ガスをガス供給
口６から導入しながら、排気手段（図示せず〉に接続し
た排・気口９から排気して約ＩＸ１０ Ｔｏｒｒ付近
の減圧状態とし、下部電極１１に高周波電源１３から高
周波電圧を印加し、前記下部電極１１と上部電極８との
間にプラズマを発生させて、被エッチング物１２をエッ
チングする。この時被エッチング物１２の均一性向上を
図るためにリング１０を配置している。この時反応ガス
としては、塩素，三塩化ホウ素を含む塩化物系混合ガス
を使用している。しかしながら、塩化物系混合ガスを使
用すると基板表面全体に残留塩素が付着し、その結果、
残留塩素がＡｌ腐食を起こす。従ってその腐食を防止す
るための後処理として、フッ素系あるいは酸素系プラズ
マによる置換を後なった後、加熱処理などを行なってい
る。一方プラズマを用いたＡｌ ドライエッチングの別
の方法として、励起された水素原子１たはメチル・ラジ
カルのうち少なくとも何れか一方を解離する物質を用い
る方法がある（Ｉ＃公昭５６−４３１ １３）。2. Description of the Related Art In recent years, semiconductor integrated circuits and thin film devices have become highly integrated, which requires highly accurate microfabrication. FIG. 2 shows an apparatus used in conventional reactive ion etching. While introducing the reaction gas into the reaction chamber 7 through the gas supply port 6, the reaction gas is evacuated from the exhaust/air port 9 connected to an exhaust means (not shown) to reduce the pressure to about IX10 Torr, and the lower electrode 11 is heated. A high frequency voltage is applied from a high frequency power supply 13 to generate plasma between the lower electrode 11 and the upper electrode 8 to etch the object to be etched 12. At this time, in order to improve the uniformity of the object to be etched 12, A ring 10 is arranged. At this time, a chloride-based mixed gas containing chlorine and boron trichloride is used as the reaction gas. However, when a chloride-based mixed gas is used, residual chlorine is generated over the entire substrate surface. adhesion, resulting in
Residual chlorine causes Al corrosion. Therefore, as a post-treatment to prevent corrosion, heat treatment or the like is performed after substitution with fluorine-based or oxygen-based plasma. On the other hand, as another method of Al dry etching using plasma, there is a method using a substance that dissociates at least one of excited hydrogen atoms 1 and methyl radicals (I# Publication No. 56-431 13).
発明が解決しようとする課題
上記の従来の方法において、すべて塩化物系反応ガスを
用いるＡｌ ドライエッチングに関しては、残留塩素
を取シ除〈後処理を行ななっても筐だ不充分であシ、そ
の結果Ａｌ腐食がしばしば起こる問題点を生じている。Problems to be Solved by the Invention In the above-mentioned conventional methods, for Al dry etching, which uses a chloride-based reaction gas, residual chlorine is removed. , resulting in the problem that Al corrosion often occurs.
一方、励起された水素掠子筐たはメチル●ラジカルのう
ち少なくとも何れか一方を解離する物質を用いる方法に
おいては、希ガスのアルゴンを加えてもＡｌエッチング
速度が７ ０ Ｏ Ａ／分と低く、生産性において大き
な問題点を有している。On the other hand, in a method using a substance that dissociates at least one of excited hydrogen gas or methyl radicals, the Al etching rate is as low as 70 O A/min even when the rare gas argon is added. , there are major problems in productivity.
本発明は上記の問題点を解決するもので、Ａｄ腐食が起
こらないでかつ生産性も高いＡｌ ドライエッチング方
法を提供するものである。The present invention solves the above problems and provides an Al dry etching method that does not cause Ad corrosion and has high productivity.
課題を解決するための手段
上記問題点を解決するために本発明のドライエッチング
方法は、塩化物系混合ガスを用いてプラズマエッチング
特に反応性イオンエッチングを行ない、その後に水素原
子またはメチル・ラジカルの少なくとも一方を解離する
物質と不活性ガスを含む混合ガスによりアルミニウム薄
膜の厚み方向の残シの膜をプラズマエッチングをするも
のである。Means for Solving the Problems In order to solve the above problems, the dry etching method of the present invention performs plasma etching, particularly reactive ion etching, using a chloride-based mixed gas, and then removes hydrogen atoms or methyl radicals. The remaining film in the thickness direction of the aluminum thin film is plasma etched using a mixed gas containing a substance that dissociates at least one side and an inert gas.
作 用
本発明は上記に示した方法によシ、塩化物系混合ガスＫ
よる残留塩素をメチル●ラジカルや不活性ガスを含む混
合ガスによるプラズマエッチングによシ、残留塩素の置
換や気化を促進でき、Ａｌ腐食を防ぐことが可能となる
。１たＡｌのエッチング速度に関しては、大部分を塩化
物系混合ガスによって行なうので生産性も維持できる。Function The present invention uses the method shown above to produce a chloride-based mixed gas K.
Plasma etching with a mixed gas containing methyl radicals and inert gas can promote the replacement and vaporization of residual chlorine, making it possible to prevent Al corrosion. Regarding the etching rate of Al, productivity can also be maintained since most of the etching is performed using a chloride-based mixed gas.
実施例
以下、本発明の一実施例について、図面を参照しながら
説明する。EXAMPLE Hereinafter, an example of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例のＡｌ ドライエッチング方
法によるＡｌ，Ａｌ合金膜のドライエッチングを行なっ
たものである。第１図において、ａはエッチング前の状
態である。８１基板４上に熱酸化膜３を形成した後，
Ａｄ膜２を約１μｍスパフター蒸着させ、ボジレジスト
膜１を約１．６μｍ形成させている。この試料を前記に
示した第２図の平行平板を用いた反応性イオンエッチン
グ装置を用い、ｂに示すようにＢＣＩ３を含む塩化物系
混合ガスでＡｌ配線膜約１μｍの％〜Ｘまでエッチング
加工した。この時のエッチング条件としては、ＲＦパ’
７−４００Ｗ，圧力ａ ｏ ｍ Ｔｏｒｒ ，下部電極
の温度を６０’Ｃとした。このエッチングによシ、残シ
のＡｌ配線２上には、塩化物系残留物６が付着されてい
る。次に残りのＡｄ配線膜のエッチングをメタンとアル
ゴンの混合ガスを用いて行なった。Ｃは、このエッチン
グ後の状態を示したものである。エッチング条件は，Ｒ
Ｆパワー４ｏｏＷ，圧力８ ０ｍＴｏｒｒ ，下部電極
の温度を６０’Ｃとした。このエッチングによりＡｌ配
線上に塩化物系残留物も気化され易くなると同時に、Ａ
ｌ側壁面にも保護膜が形成され易くなるためＡｌ配線膜
の腐食を防ぐことができる。FIG. 1 shows dry etching of an Al or Al alloy film by an Al dry etching method according to an embodiment of the present invention. In FIG. 1, a indicates the state before etching. 81 After forming the thermal oxide film 3 on the substrate 4,
The Ad film 2 is sputter-deposited to a thickness of about 1 μm, and the resist film 1 is formed to a thickness of about 1.6 μm. This sample was etched using the reactive ion etching apparatus using the parallel plate shown in Fig. 2 described above with a chloride-based mixed gas containing BCI3 to an Al wiring film of approximately 1 μm in thickness, as shown in b. did. The etching conditions at this time include the RF pattern.
7-400W, pressure aom Torr, and lower electrode temperature 60'C. As a result of this etching, a chloride-based residue 6 is attached to the remaining Al wiring 2. Next, the remaining Ad wiring film was etched using a mixed gas of methane and argon. C shows the state after this etching. The etching conditions are R
The F power was 4ooW, the pressure was 80 mTorr, and the temperature of the lower electrode was 60'C. This etching makes it easier to vaporize chloride residue on the Al wiring, and at the same time
Since the protective film is also easily formed on the l side wall surface, corrosion of the Al wiring film can be prevented.
発明の効果
以上のように， Ａｌ ，もしくはＡｌ合金膜のドライ
エッチングにおいて、塩化物系混合ガスを所定の厚み筐
でドライエッチングを行なった後に水素原子またはメチ
ル・ラジカルの少なくとも一方を解離する物質と不活性
ガスを含む混合ガスによるドライエッチングを行なう本
発明の方法により、ＡＩ，もしくはＡｄ合金膜上を含む
被エッチング物上のドライエッチング残留塩化物を取シ
除くとともにエッチング速度の低下を防ぐことができる
ため、信頼性の向上と量産性に貢献できる。Effects of the Invention As described above, in dry etching of Al or Al alloy films, after performing dry etching with a chloride-based mixed gas at a predetermined thickness, a substance that dissociates at least one of hydrogen atoms or methyl radicals is used. By the method of the present invention, which performs dry etching using a mixed gas containing an inert gas, it is possible to remove residual chloride from dry etching on the object to be etched, including on the AI or Ad alloy film, and to prevent a decrease in the etching rate. This can contribute to improved reliability and mass productivity.
【図面の簡単な説明】
第１図は本発明の一実施例のＡｌ合金のドライエッチン
グ方法のエッチング過程を示す図、第２図は同実施例に
おける装置の概略断面である。
６・・・・・・ガス供給口、７・・・・・・反応室，８
・・・・・・上部電極、９・・・・・・排気口、１０・
・・・・・リング、１１・・・・・・下部電極、１２・
・・・・・被エッチング物，１３・・・・・・高周波電
源。
寓
１
口
第
２
図
６BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram showing the etching process of an Al alloy dry etching method according to an embodiment of the present invention, and FIG. 2 is a schematic cross-section of an apparatus in the same embodiment. 6...Gas supply port, 7...Reaction chamber, 8
...Top electrode, 9...Exhaust port, 10.
...Ring, 11...Lower electrode, 12.
...Object to be etched, 13...High frequency power supply. Fable 1 Mouth 2 Figure 6
Claims (1)
ンの形成された半導体基板を、塩化物系混合ガスを用い
高周波グロー放電プラズマにより所定の厚みまでアルミ
ニウムもしくはアルミニウム合金をエッチングし、その
後水素原子またはメチル・ラジカルのうち少なくとも一
方を解離する物質と不活性ガスを含む混合ガスにより、
アルミニウム薄膜の厚み方向の全域にわたってエッチン
グすることを特徴とするドライエッチング方法。A semiconductor substrate on which an aluminum film and a mask pattern that selectively covers the film is formed is etched with aluminum or aluminum alloy to a predetermined thickness by high-frequency glow discharge plasma using a chloride-based mixed gas, and then hydrogen atoms or methyl With a mixed gas containing a substance that dissociates at least one of the radicals and an inert gas,
A dry etching method characterized by etching the entire thickness of an aluminum thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15866789A JPH0323633A (en) | 1989-06-21 | 1989-06-21 | Dry etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15866789A JPH0323633A (en) | 1989-06-21 | 1989-06-21 | Dry etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0323633A true JPH0323633A (en) | 1991-01-31 |
Family
ID=15676723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15866789A Pending JPH0323633A (en) | 1989-06-21 | 1989-06-21 | Dry etching |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0323633A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0383337A (en) * | 1989-08-28 | 1991-04-09 | Hitachi Ltd | Post processing method |
| JPH0415919A (en) * | 1990-05-09 | 1992-01-21 | Hitachi Ltd | Method of post treatment |
| US5578163A (en) * | 1991-10-21 | 1996-11-26 | Seiko Epson Corporation | Method of making an aluminum containing interconnect without hardening of a sidewall protection layer |
-
1989
- 1989-06-21 JP JP15866789A patent/JPH0323633A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0383337A (en) * | 1989-08-28 | 1991-04-09 | Hitachi Ltd | Post processing method |
| JPH0415919A (en) * | 1990-05-09 | 1992-01-21 | Hitachi Ltd | Method of post treatment |
| US5578163A (en) * | 1991-10-21 | 1996-11-26 | Seiko Epson Corporation | Method of making an aluminum containing interconnect without hardening of a sidewall protection layer |
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