JPH03236233A - Apparatus and method for wet-type cleaning for semiconductor wafer - Google Patents
Apparatus and method for wet-type cleaning for semiconductor waferInfo
- Publication number
- JPH03236233A JPH03236233A JP3155790A JP3155790A JPH03236233A JP H03236233 A JPH03236233 A JP H03236233A JP 3155790 A JP3155790 A JP 3155790A JP 3155790 A JP3155790 A JP 3155790A JP H03236233 A JPH03236233 A JP H03236233A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- pressure
- cassette
- intermediate chamber
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 73
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title claims description 4
- 239000007788 liquid Substances 0.000 claims abstract description 29
- 235000012431 wafers Nutrition 0.000 claims abstract description 26
- 238000001035 drying Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 4
- 230000032258 transport Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 241000218691 Cupressaceae Species 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 and cleaning Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体ウェハの湿式洗浄装置及び方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a wet cleaning apparatus and method for semiconductor wafers.
従来の技術は、例えば、特開昭６４−４２１３４号公報
に記載のように、大気圧下の洗浄液に半導体ウェハを浸
漬して洗浄を行う構成となっていた・
〔発明が解決しようとする課題〕
上記従来技術はウェハの微細な構造領域の洗浄について
は配慮されておらず、洗浄が不十分であるとの問題があ
った。すなわち、シリコン半導体の如くデバイス構造が
微細化してくると、大気圧下の洗浄では洗浄液の表面張
力のため、デバイス構造の孔、溝２段差部等微細構造の
窪み部の気泡と洗浄液の置換が十分には行丸な鴫なり、
洗浄不十分となった。In the conventional technology, for example, as described in Japanese Patent Application Laid-Open No. 64-42134, the semiconductor wafer is cleaned by immersing it in a cleaning liquid under atmospheric pressure. [Problems to be Solved by the Invention] ] The above-mentioned conventional technology does not take into consideration the cleaning of the fine structure region of the wafer, and has the problem of insufficient cleaning. In other words, as device structures such as silicon semiconductors become finer, the surface tension of the cleaning liquid during cleaning under atmospheric pressure causes the cleaning liquid to replace air bubbles in the hollows of microstructures such as holes and two-step grooves in the device structure. It's enough to be a gloomy crow,
Cleaning was insufficient.
本発明の目的は上記従来技術の有する間層点を解決し、
微細構造を有する半導体つ、ハの湿式洗浄装置及び洗浄
方法を提供することにある。The purpose of the present invention is to solve the problems of the above-mentioned prior art,
An object of the present invention is to provide a wet cleaning apparatus and a cleaning method for semiconductors having a fine structure.
本発明は上記目的を達成するために、減圧可能なカセッ
ト室と大気圧下の洗浄槽との間に、これらとゲートバル
ブを介して遅通し、かつ、減圧可能に構成された少なく
とも１個の中間室を設けたものである。さらに、この中
間室の一部に洗浄液を循環可能に構成した洗浄部を設け
たものである。In order to achieve the above-mentioned object, the present invention provides at least one spacer between a cassette chamber that can be depressurized and a cleaning tank under atmospheric pressure, which is connected through a gate valve and is configured to be depressurized. It has an intermediate chamber. Furthermore, a cleaning section configured to allow circulation of cleaning liquid is provided in a part of this intermediate chamber.
中間室はウェハを収納後減圧され、その圧力下で洗浄部
を洗浄液に浸漬した後に圧力を大気圧に戻すように操作
される。このため、ウェハの微細構造部の気泡は脱離し
、洗浄液が浸透しやすくなり、さらに洗浄液に浸漬後圧
力を大気圧に戻すので減圧時の圧力に比例する微細構造
部の残存気体体積は圧縮され、その結果、微細構造の細
部に洗浄液が浸透する。After storing the wafer, the pressure in the intermediate chamber is reduced, and after the cleaning section is immersed in the cleaning liquid under that pressure, the pressure is returned to atmospheric pressure. For this reason, the air bubbles in the microstructure of the wafer are removed, making it easier for the cleaning solution to penetrate.Furthermore, since the pressure is returned to atmospheric pressure after being immersed in the cleaning solution, the remaining gas volume in the microstructure, which is proportional to the pressure at the time of decompression, is compressed. , as a result, the cleaning liquid penetrates into the details of the microstructure.
〔実 施 例〕 以下本発明の一実施例を第１図により説明する。〔Example〕 An embodiment of the present invention will be described below with reference to FIG.
湿式洗浄装置ｌｌは、カセット室２．１！１中間室３、
第２中間室４と、それに続く洗浄槽り、２４゜ｚ、３５
と、ウェハ乾燥権力からなり、カセット室２はゲートバ
ルブ６、カセット３４の搬送具１０、バルブＢを介して
真空ポンプ１４およびリークバルブｂを存し、第１中間
室３隣接するカセット室２とＮ２中間室４との間をゲー
トバルブ７．８で仕切られ、搬送具■と、バルブ１６を
介して真空ポンプ１７、リークバルブ絽を有し、ＩＪ！
２中間室４は下部に洗浄液を貯え、循環ポンプｎを備え
る洗浄部５と、朦送治具認、バルブ辺を介した真空ポン
プ印、リークバルブ４を有し、大気とゲートバルブ９で
遮断される。洗浄槽Ｚ３．２４．２５．２６はおのおの
洗浄液の循環ポンプ３０． ３１． ３２．３３とを有
し上部にカセットを移動させ、洗浄液に浸漬し、また、
洗浄液かな取り出す搬送ライン囚と朦送具四とを有する
。ここで各洗浄槽は次の目的で設置される。The wet cleaning device II has a cassette chamber 2.1!1 intermediate chamber 3,
Second intermediate chamber 4 and subsequent cleaning tank, 24°, 35
The cassette chamber 2 has a gate valve 6, a conveyor 10 for the cassette 34, a vacuum pump 14 and a leak valve b via the valve B, and the first intermediate chamber 3 is connected to the adjacent cassette chamber 2. It is partitioned off from the N2 intermediate chamber 4 by a gate valve 7.8, and has a conveyor ■, a vacuum pump 17 via a valve 16, a leak valve, and an IJ!
2. The intermediate chamber 4 stores a cleaning liquid in the lower part, has a cleaning section 5 equipped with a circulation pump n, a cleaning jig, a vacuum pump seal through the valve side, and a leak valve 4, and is shut off from the atmosphere by a gate valve 9. be done. The cleaning tanks Z3, 24, 25, and 26 each have a circulation pump 30. 31. 32. Move the cassette to the top with 33 and immerse it in the cleaning solution, and
It has a conveyor line for taking out the cleaning liquid and four conveyors. Here, each cleaning tank is installed for the following purposes.
洗浄部５と洗浄槽βは油脂およびホトレジスト等の有機
物の除去用であり、洗浄槽５はシリコン酸化膜等無機物
の除去用で、洗浄槽２４． ｙｓは直前の洗浄でつ、ハ
に付着した洗浄液を希釈あるいは中和する檜であり、そ
れぞれにふされしい洗浄液が使用され、焼浄槽τは洗浄
されたつ、ハの蒸気乾燥用で、通常はアルコール類が使
用される。The cleaning section 5 and the cleaning tank β are for removing organic substances such as oil and fat and photoresist, the cleaning tank 5 is for removing inorganic substances such as silicon oxide film, and the cleaning tank 24. ys is a cypress that dilutes or neutralizes the cleaning liquid that has adhered to the surface of the surface during the previous cleaning, and the appropriate cleaning liquid is used for each type of cleaning solution. alcohol is used.
本発明は上記のように構成されるので次のように動作す
る。洗浄すべきウェハ蕊を収納したカセザト誦はゲート
バルブ６よりカセット室２に入れられ、ゲートバルブ６
を閉じた後に真空ポンプ１４により必要でから第２中間
室４より低い圧力に減圧され、ウェハ表面、特に微細構
造部の気泡を十分に脱離する。次に事前にカセット室２
と同程度に減圧されている第１中間室のゲートバルブ７
をｙ＠きカセブト調を搬送具１０．１１によって第１中
間室３へ運ぶ。第１中間室３では第２中間室４の圧力と
同等な圧力へ、リークバルブ迅を開きリーク用ガスを投
入する。このリーク用ガスにはｊ１２中間室４に使用す
る洗浄液とほぼ同じ成分の蒸気を使用するのが望ましい
。第１中間室３と第２中間室４の圧力が等しくなった後
にゲートバルブ８を開き、カセットは搬送具■、１２に
より９Ｊ２中間室４へ運ばれ、その下部の洗浄部５へ移
動され洗浄液に浸漬されるとともにゲートバルブ８が閉
じられる。その後リークバルブ４を開き窒素等のり一り
ガスを導入し圧力を大気圧まで戻した後にゲートバルブ
９を開きカセットは搬送具認および搬送ラインＺの搬送
具四によって大気圧下の洗浄檜幻へ移動される。各洗浄
槽Ｚ３．２４．２５．２６でそれぞれの洗浄が行われた
後にウェハを収納したカセット１４はウェハ乾燥槽Ｉへ
運ばれ、ここでは浸漬されずに気相部に留められ、アル
コール蒸気に晒されて、ウェハに付着した水分を蒸発さ
せて乾燥される。本実施例においてはカセット室２は０
．１簡Ｈ７に減圧され、第１中間室２は０．１ ＭＸＨ
９に減圧された後に、第２中間室４の圧力と同じ１８１
１Ｈりに圧力を戻される。第２中間室４の水を主成分と
する洗浄液の温度は湿式洗浄装［１が設置される雰囲気
温度と同じ２１℃に維持され、ＩＪ２中間室の圧力は２
１℃の洗浄液の飽和蒸気圧１７．５１ＣＩＨ）より高い
１８ｍＨｆ！に減圧された後、大気圧に戻される。これ
は洗浄液の飽和蒸気圧以下では液体の蒸発が生じ易く、
安定してその圧力を維持できない理由による。カセット
室２および第１中間室２の減圧によって、その圧力０．
１ＷｊｌｌＨ９に相当する残存気体まで気体を脱離した
ウェハは第２中間室４で洗浄液に浸漬された後に大気圧
に戻されるのでウニへの微細構造部の残存気体は０．１
７７６０に圧縮され、この結果、微細構造部には十分洗
浄液が浸透する。微細構造部に液が一旦浸透すると毛細
管現象により、例えウェハが気相中に晒されても短い時
間であれば液体を保持するために気泡が進入することは
なく、次の洗浄液中で濃度拡散に基づいて洗浄液が入れ
替り、必要な洗浄液による洗浄あるいは希釈、中和が行
われる。ここで第１中間室３は省略することができるが
、この場合カセット室の減圧圧力を第２中間室の圧力と
等しくするかあるいは第２中間室の圧力を不安定ながら
一時的にカセット室の圧力まで減圧する必要がある。Since the present invention is configured as described above, it operates as follows. The cassette containing the wafers to be cleaned is put into the cassette chamber 2 through the gate valve 6;
After the chamber is closed, the pressure is reduced by the vacuum pump 14 to a pressure lower than that of the second intermediate chamber 4, as necessary, to sufficiently remove air bubbles from the wafer surface, particularly the fine structure. Next, in advance, cassette chamber 2
Gate valve 7 of the first intermediate chamber whose pressure is reduced to the same extent as
The conveyor 10.11 transports the container to the first intermediate chamber 3. In the first intermediate chamber 3, the leak valve is opened to bring the pressure to the same level as the pressure in the second intermediate chamber 4, and leak gas is introduced. It is desirable to use steam having almost the same composition as the cleaning liquid used in the j12 intermediate chamber 4 for this leakage gas. After the pressures in the first intermediate chamber 3 and the second intermediate chamber 4 become equal, the gate valve 8 is opened, and the cassette is transported to the 9J2 intermediate chamber 4 by the carriers (1) and 12, and then moved to the cleaning section 5 at the lower part of the 9J2 intermediate chamber 4. At the same time, the gate valve 8 is closed. After that, the leak valve 4 is opened and a gas such as nitrogen is introduced to return the pressure to atmospheric pressure, and then the gate valve 9 is opened and the cassette is transported to a cleaning chamber under atmospheric pressure by the transport tool 4 on the transport line Z. will be moved. After each cleaning is performed in each cleaning tank Z3.24.25.26, the cassette 14 containing the wafers is transported to the wafer drying tank I, where it is kept in the gas phase without being immersed, and is exposed to alcohol vapor. The wafer is exposed to water to evaporate and dry it. In this embodiment, the cassette chamber 2 is 0.
．． The pressure in the first intermediate chamber 2 is reduced to 0.1 MXH.
After the pressure is reduced to 9, the pressure is 181, which is the same as the pressure in the second intermediate chamber 4.
The pressure was restored after 1 hour. The temperature of the cleaning liquid mainly composed of water in the second intermediate chamber 4 is maintained at 21°C, which is the same as the atmospheric temperature in which the wet cleaning device [1] is installed, and the pressure in the IJ2 intermediate chamber is 21°C.
18 mHf higher than the saturated vapor pressure of cleaning liquid at 1°C (17.51 CIH)! The pressure is then reduced to atmospheric pressure. This is because liquid evaporation tends to occur below the saturated vapor pressure of the cleaning liquid.
This is due to the reason that the pressure cannot be maintained stably. By reducing the pressure in the cassette chamber 2 and the first intermediate chamber 2, the pressure becomes 0.
The wafer, which has been degassed to a residual gas equivalent to 1WjllH9, is immersed in the cleaning liquid in the second intermediate chamber 4 and then returned to atmospheric pressure, so that the residual gas in the fine structure to the sea urchin is 0.1
7760, resulting in sufficient penetration of the cleaning liquid into the microstructures. Once the liquid has penetrated into the microstructure, capillary action will prevent air bubbles from entering to retain the liquid even if the wafer is exposed to the gas phase for a short time, and the concentration will be diffused in the next cleaning liquid. The cleaning liquid is replaced based on the cleaning liquid, and cleaning, dilution, and neutralization are performed with the necessary cleaning liquid. Here, the first intermediate chamber 3 can be omitted, but in this case, the reduced pressure in the cassette chamber can be made equal to the pressure in the second intermediate chamber, or the pressure in the second intermediate chamber can be made unstable and the pressure in the cassette chamber can be temporarily changed. It is necessary to reduce the pressure to
本実施例によれば、洗浄すべきウェハはカセット室およ
び中間室でその圧力まで気体を脱離し、しかも微細構造
部の残存気体は圧縮されるので、洗浄液が十分に浸透で
きる効果がある。According to this embodiment, the wafer to be cleaned is degassed to that pressure in the cassette chamber and the intermediate chamber, and the remaining gas in the fine structure is compressed, so that the cleaning liquid can sufficiently penetrate.
本発明は上記により微細構造の窪み部に対しても十分に
脱気し、洗浄液を浸透させることができるので、半導体
ウェハを高い精度で洗浄できる。According to the present invention, the recessed portions of the fine structure can be sufficiently deaerated and the cleaning liquid can penetrate therethrough, so that the semiconductor wafer can be cleaned with high precision.
第１図は本発明の一実施例を示す湿式洗浄装置の縦断面
図である。FIG. 1 is a longitudinal sectional view of a wet cleaning device showing an embodiment of the present invention.
Claims (1)
において、減圧可能なカセット室と大気圧下の洗浄槽と
の間に設置され、前記カセット室および洗浄槽と互にゲ
ートバルブを介して連通するごとく、さらに真空ポンプ
によって減圧可能なごとくに構成され、前記半導体ウエ
ハの移動手段を有する少なくとも１個の中間室を備えて
なることを特徴とする半導体ウェハの湿式洗浄装置。 ２、前記中間室の１個は、その一部に洗浄液を貯え、該
洗浄液はポンプによって循環可能なごとくに構成された
第１請求項に記載の半導体ウェハの湿式洗浄装置。 ３、前記中間室において、減圧状態で半導体ウェハを洗
浄液に浸漬した後に該中間室を大気圧に戻し、隣接する
大気圧下の洗浄槽へ前記半導体ウエハを移動して洗浄を
行うことを特徴とする半導体ウェハの湿式洗浄方法。[Scope of Claims] 1. A wet cleaning apparatus for cleaning semiconductor wafers under atmospheric pressure, which is installed between a cassette chamber that can be depressurized and a cleaning tank under atmospheric pressure, and is compatible with the cassette chamber and the cleaning tank. Wet cleaning of semiconductor wafers, characterized by comprising at least one intermediate chamber configured to communicate with the chamber through a gate valve and to be able to reduce the pressure by a vacuum pump, and having at least one intermediate chamber having a means for moving the semiconductor wafer. Device. 2. The wet cleaning apparatus for semiconductor wafers according to claim 1, wherein one of the intermediate chambers partially stores a cleaning liquid, and the cleaning liquid can be circulated by a pump. 3. In the intermediate chamber, after immersing the semiconductor wafer in a cleaning liquid under reduced pressure, the intermediate chamber is returned to atmospheric pressure, and the semiconductor wafer is moved to an adjacent cleaning tank under atmospheric pressure to perform cleaning. A wet cleaning method for semiconductor wafers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3155790A JPH03236233A (en) | 1990-02-14 | 1990-02-14 | Apparatus and method for wet-type cleaning for semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3155790A JPH03236233A (en) | 1990-02-14 | 1990-02-14 | Apparatus and method for wet-type cleaning for semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03236233A true JPH03236233A (en) | 1991-10-22 |
Family
ID=12334482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3155790A Pending JPH03236233A (en) | 1990-02-14 | 1990-02-14 | Apparatus and method for wet-type cleaning for semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03236233A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5780359A (en) * | 1995-12-11 | 1998-07-14 | Applied Materials, Inc. | Polymer removal from top surfaces and sidewalls of a semiconductor wafer |
-
1990
- 1990-02-14 JP JP3155790A patent/JPH03236233A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5780359A (en) * | 1995-12-11 | 1998-07-14 | Applied Materials, Inc. | Polymer removal from top surfaces and sidewalls of a semiconductor wafer |
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